arxiv:cond-mat/ v2 [cond-mat.mes-hall] 20 Feb 2006

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1 Pair tunneling through single molecules arxiv:con-mat/5249v2 con-mat.mes-hall] 2 Feb 26 Jens Koch, M.E. Raikh, 2 an Felix von Oppen Institut für Theoretische Physik, Freie Universität Berlin, Arnimallee 4, 495 Berlin, Germany 2 Department of Physics, University of Utah, Salt Lake City, UT 842, USA (Date: October, 25) By a polaronic energy shift, the effective charging energy of molecules can become negative, favoring groun states with even numbers of electrons. Here, we show that charge transport through such molecules near groun-state egeneracies is ominate by tunneling of electron pairs which coexists with (featureless) single-electron cotunneling. Due to the restricte phase space for pair tunneling, the current-voltage characteristics exhibits striking ifferences from the conventional Coulomb blockae. In asymmetric junctions, pair tunneling can be use for gate-controlle current rectification an switching. PACS numbers: b,72..Bg,8.7.Nb Introuction. Electronic transport through single molecules is istinguishe from transport through quantum ots by the coupling to well-efine vibrational egrees of freeom. This coupling has two principal consequences: First, it leas to the emergence of vibrational siebans in the current-voltage (IV ) characteristics. This phenomenon occurs at large voltages which excee the vibrational frequency, ω. Its theoretical escription was pioneere in Refs., 2] an extene in, e.g., Refs. 3, 4, 5], following experiments 6, 7, 8, 9] on transport through molecular junctions. Secon, the coupling to molecular vibrations inuces a polaron shift an can lea to a negative effective charging energy U. In physics, the concept of negative-u centers was first pointe out more than three ecaes ago ], an is realize in many amorphous semiconuctors. In chemistry, the scenario of negative U is known as potential inversion ]. An important ingreient in realizing this scenario in molecular junctions may be a reuction of the true molecular charging energy by screening ue to metallic electroes 2] or an electrolytic environment 3]. Unlike vibrational siebans, negative U manifests itself in transport through molecules alreay at low voltages. The prime manifestation of negative U stuie to ate 4, 5, 6, 7, 8] concerns the Kono transport at very low temperatures. In general, finite on-site interaction (of any sign) opens a new transport channel between molecule an leas. Namely, at finite U, two electrons can hop onto the molecule simultaneously. But it is only for negative U that this process can ominate the transport. Inee, negative U favors even electron occupation numbers of the molecule. A Kono resonance occurs when two states, whose occupation numbers iffer by two, are egenerate. Then, a virtual pair transition assumes the role of the spin-flip 9], leaing to the formation of Kono correlations in the groun state. However, the fact that the relevant pseuospin egree of freeom is associate with charge makes this Kono state rather fragile. The unerlying reason for this was eluciate by FIG. : (a) Level configuration of the negative-u moel. Shown are the one-particle energies for the singly-occupie ot (ε ), the oubly-occupie ot (ε + U/2), an the energy for which holes can propagate through the oubly-occupie ot (ε +U). The right panel illustrates the relevant types of processes: (b) cotunneling, (c) an () pair tunneling. Halane 2], who pointe out that for the charge Kono effect, any eviation from egeneracy acts as a Zeeman fiel on the pseuospin an, thus, suppresses the Kono correlations. This observation has a rastic consequence for transport. For the conventional (spin) Kono effect, the low-temperature conuctance eventually reaches the unitary value over a wie range of gate voltages. By contrast, for the charge Kono effect the unitary value is only achieve precisely at the resonance gate voltage. This fragility of the charge Kono effect in transport through molecules with negative U was illustrate by several recent numerical simulations 6, 7, 8]. The main message of the present paper is that negative U strongly affects the transport through a molecule even in the rate-equation regime at high temperatures, where Kono correlations are irrelevant. We show that in this regime, a negative U leas to a unique scenario for the passage of current through the molecule, which we stuy analytically at all gate voltages an biases. Effective Hamiltonian. Consier a molecule with a single spin-egenerate single-particle orbital ε ominating the transport between two metallic electroes. As ε is sweepe by a gate voltage, the electron occupation n

2 2 of the molecule switches from empty (n = ) to oubly occupie (n = 2) at the resonant gate voltage efine by the conition 2ε + U = 27]. (We measure all energies from the Fermi energy.) Due to the negative U, single occupation (n = ) of the molecule is unfavorable at any gate voltage. A schematic of the corresponing configuration of one-particle energies near resonance is shown in Fig. (a). Sequential tunneling of single electrons is clearly exponentially suppresse at bias voltages ev U. Instea, the ominant sequential transport processes near resonance involve the coherent transfer of electron pairs 28]. Representative pair-tunneling processes are illustrate in Figs. (c) an (). It is important to realize that in aition to processes in which the two electrons enter the molecule from the same lea, the electron pair on the molecule can be create (or annihilate) by two electrons tunneling in from (or out to) opposite leas. In parallel with these sequential pairtunneling processes, single-particle cotunneling processes see Fig. (b)] also take place. We fin that while both processes are of the same orer, they can be easily istinguishe since the single-particle cotunneling contribution oes not exhibit any structure near the resonance gate voltage. To capture all eight pair-tunneling processes systematically, we perform a Schrieffer-Wolff transformation 2]. We start from the Hamiltonian H = H mol + H vib + H leas + H i, 4], where the separate contributions correspon to the electronic molecular orbital H mol = ε n + Un n, to the molecular vibrations H vib = ωb b + λ ω(b + b)n, to the leas H leas = a=l,r p,σ ǫ pc apσ c apσ, an to the tunneling ( between leas an molecule, H i = ta c apσ σ + h.c. ). Here, the operator σ a=l,r p, σ annihilates an electron with spin σ on the molecule, c apσ annihilates an electron in lea a (a = L, R) with momentum p an spin σ, vibrational excitations are annihilate by b, an t L,R enotes the tunneling matrix elements. The electron-phonon coupling (with coupling constant λ) can be eliminate as usual by a canonical transformation, 4], which implies renormalizations of the tunneling Hamiltonian t a t a e λ(b b), of the orbital energy ε ε λ 2 ω, an of the charging energy U U 2λ 2 ω. It is this last renormalization which opens the possibility of a negative effective charging energy. The unerlying reason for this renormalization is that the energetic polaron shift is proportional to the excess charge of the molecule square which is of the same form as the Coulomb charging energy. To be specific, we focus on temperatures an biases where only the vibrational groun state is populate. In this case, we obtain an effective Hamiltonian H eff = H mol + H leas + H i with negative effective charging energy U an Franck-Conon suppresse tunneling matrix elements t a t a e λ2 /2 (absorbe into the efinition of t a in the following). Performing the Schrieffer-Wolff transformation on H eff in the usual way 22], we eliminate H i to lowest orer an obtain a transforme Hamiltonian H SW = H mol + H leas + H ir,ex + H pair, () where we ignore a term which merely renormalizes ε. For positive U, one only retains H ir,ex = ta t a c apσ 2 ǫ ap ε c a p σ (2) aa pp σ + t a t a M(ǫ ap) ( σ ) ] σ c apσc a p σ c apσc a p σn σ + h.c. which escribes the irect an exchange interactions between molecule an lea. Here, we have introuce the abbreviations M(ǫ) = ǫ ε ǫ (ε +U), an, =,. With U > an in the absence of charge fluctuations, transport preominantly procees via single-electron cotunneling escribe by H ir,ex. By contrast, for negative U it is crucial to retain the pair-tunneling terms H pair = t a t a M(ǫ ap ) c a p c ap + h.c. (3) aa pp Obviously, H pair contributes only for nonzero effective charging energy U. Rates. Using Fermi s Golen Rule, the pair Hamiltonian H pair leas to the rate W aa 2 = Γ aγ a h ǫ M 2 (ǫ)f a (ǫ)f a (2ε + U ǫ), (4) for pairs of electrons tunneling onto the molecule. Here, Γ a = 2πν a t a 2 is the energy scale of single-particle tunneling in junction a for a constant ensity of states ν a. The superscripts (aa ) enote the leas from where the spin-up electron (a) an the spin-own electron (a ) originate. The analogous rates W2 aa for pairs leaving the molecule are obtaine from Eq. (4) by replacing each lea Fermi function f a with a factor ( f a ). In the regime where single-particle occupation of the molecule is negligible, i.e. 2ε + U, ev, k B T ε, ε + U, the integral in Eq. (4) approximately reuces to an integral over the Fermi functions alone, an can be expresse in terms of the function F(ǫ) = ǫ/exp(βǫ) ]. For symmetric voltage splitting 29], i.e., f a (ǫ) = f(ǫ ev a ) with V L,R = ±V/2, the explicit result for pair tunneling reas W aa x = Γ aγ a h M2 ()F ± (2ε + U + ev a + ev a )], (5) where the upper (lower) sign refers to x = 2 (x = 2 ). The pair-tunneling rates, Eq. (5), have several remarkable features. (i) Pair tunneling with electrons originating from the same lea a = a, Fig. (c)] leas to biasepenent rates. By contrast, pair tunneling with electrons from ifferent leas a a, Fig. ()] is bias inepenent, as the energy missing in the lea with lower

3 3 Fermi energy is exactly compensate for by the aitional energy available in the lea with higher Fermi energy. (ii) When pair tunneling is energetically allowe, its rate is proportional to the etuning of the pair state 2ε + U from the relevant Fermi energy. This is in sharp contrast with rates for single-electron sequential tunneling, which are inepenent of the energy of the single-particle state. This unusual behavior of the pairtunneling rates arises from the fact that only the sum of the energies of the two tunneling electrons is fixe by energy conservation, making the phase space for pair tunneling proportional to the etuning 23]. We will see below that this leas to characteristic features of pair tunneling both in the gate-voltage an bias epenence of the conuctance. Similarly, the rates for cotunneling from lea a to a can be obtaine from H ir,ex as W aa = 2Γ a Γ a F(eV a )/hε 2, incluing an explicit factor of 2 for spin. The corresponing rates W2 2 aa are obtaine by the replacement ε 2 (ε + U) 2. Having establishe the relevant processes an their rates, we now escribe transport outsie the Kono regime by the corresponing rate equations 24, 25]. Since the occupation probability for the singly-occupie molecule is negligible for ev U, the stationary rate equations reuce to = P 2 W 2 P W 2, with the solution P = W 2 /W 2 + W 2 ], P 2 = P. Here, W i f enotes the total rate for transitions from initial state i to final state f, i.e., W x = a,a W x aa. The stationary current I = I pairs + I cot, evaluate in the left junction, involves contributions from pair tunneling an cotunneling, I pairs /e = P w 2 P 2 w 2, (6) I cot /e = P v + P 2 v 2 2. (7) Here, the coefficients v an w are given by v = W W LR, RL w 2 = 2W 2+W LL 2+W LR 2. RL (8) The factor of 2 in the last equation originates from the coherent transfer of two electrons in this pair-tunneling process. All remaining coefficients are obtaine from Eq. (8) by interchanging 2 in the subinices.] Results. The rate equations provie a complete analytical escription of the nonlinear current-voltage characteristics through negative-u molecules. Specifically, we fin for the linear conuctance G = 2e2 Γ L Γ R h U 2 β(2ε + U) ε 2 (ε + U) 2 (9) 2 sinhβ(2ε + U)] +f( 2ε U) ] ε 2 + f(2ε + U) (ε + U) 2. Here, the last two terms in brackets, which arise from cotunneling, give a slowly varying backgroun. By con- G (2e 2 ΓLΓR/U 2 h) 5 (a) T T = 5. 3 U T = U T =. 3 U ε + U/2 ( U ) I/ V (2e 2 Γ 2 /U 2 h) 5 5 (b) ev ev = ev = 3 2 U ev = 6 2 U ε + U/2 ( U ) FIG. 2: (color online) Conuctance as a function of gate voltage, base on our analytical results. (a) Linear conuctance G for several temperatures. The conuctance curve exhibits a featureless backgroun ue to cotunneling an a istinct peak of constant height an with T ue to pair tunneling. (b) Conuctance for several bias voltages at T =. 3 U for a symmetric junction. With bias voltages ev k BT, the with of the ouble peak is given by ev. trast, pair tunneling, escribe by the first term in brackets, leas to a remarkable conuctance peak. As illustrate in Fig. 2(a), its height G = 24e 2 Γ L Γ R /U 2 h excees twice the cotunneling backgroun an is temperature inepenent, while its with is proportional to T. This feature, which is a irect consequence of the phase space for pair tunneling, shoul provie an unambiguous experimental signature of pair tunneling as oppose to orinary Coulomb blockae conuctance peaks, whose integral strength is temperature inepenent. While the linear conuctance is ientical for symmetric an asymmetric evices, their finite-bias behavior iffers consierably. For large voltages ev k B T, we fin for the pair tunneling current I pairs = e 6U 2 2Γ L Γ R (U 2 δ 2 ) 2 Γ 2 L δ + + Γ 2 R δ + 2Γ L Γ R δ () ] Θ + Γ L δ + (Γ R δ + Γ L δ ) + (L R, + ), where δ = 2ε + U, δ ± = δ ± ev, an Θ ± = θ( δ)θ( δ ± ) θ(δ)θ(±δ ± ). For symmetric evices, Eq. () implies that the with of the conuctance curve is fixe by the bias voltage, as illustrate in Fig. 2(b). This behavior is in stark contrast to the conventional Coulomb blockae, where one fins two symmetric sharp peaks at etunings ±V/2 from resonance. This ifference which also arises from the phase space for pair tunneling, is further emphasize in Fig. 3(a) for all bias an gate voltages. Devices with a significant asymmetry in the moleculelea couplings exhibit a striking asymmetry with respect

4 4 5 (a) I (2eΓLΓR/Uh) (b) I (2eΓLΓR/Uh) -6 6 x x - 5 pair tunneling ev ( 3 U ) ev ( 3 U ) ev/ U - pure cotunneling n = 2 - (2ε + U)/ U sequential tunneling n = ε + U/2 ( 3 U ) ε + U/2 ( 3 U ) FIG. 3: (color online) Current as a function of bias an gate voltage for (a) a symmetric junction with Γ L = Γ R = k BT, (b) an asymmetric junction with Γ L =.k BT, Γ R = k BT, an with k BT =.5 3 U. For asymmetric junctions, one observes the rectification effect ue to pair tunneling. to voltage inversion, see Fig. 3(b). We fin in this case that pair tunneling causes strong current rectification, whose transmission irection can be switche by a gate voltage. To unerstan this rectification effect, consier an asymmetric evice with Γ R Γ L, an suppose that the Fermi level is higher in the left lea. Then, the pairtunneling current procees as follows: (i) A pair with electrons from opposite leas jumps onto the molecule; (ii) the electron pair on the molecule is transferre to the right lea. While (ii) is a fast process ( Γ 2 R ), the current is limite by process (i) with rate Γ L Γ R. Then, the switching by a gate voltage immeiately follows from the rate for process (i), which is exponentially suppresse only for 2ε +U >. By a similar analysis for the opposite bias, one fins an exponential suppression of the pair current for 2ε + U <, thus also explaining the rectification. These features rener molecules with negative U interesting caniates for evices with transistor-like characteristics. Conclusions. Near the egeneracy point, transport through a molecular junction with negative U iffers rastically from the conventional Coulomb-blockae scenario at positive U. For negative U, current flow makes the molecule alternate in time between even occupation numbers, which is accomplishe by pair tunneling. This is the ominant transport moe in the gate-voltage bias-voltage omain shown in Fig. 4. It is intriguing that the on-site attraction of two electrons makes pair tunneling through molecules qualitatively similar to tunneling through a superconucting grain, consiere in Ref. 26]. However, in the case of molecules, the physical picture of transport is more complex. This is because a pair can be create on the molecule by electrons tunneling from ifferent leas, as illustrate in Fig. (). By contrast, for a grain with size larger than the superconucting correlation length, elec- FIG. 4: Stability iagram for the groun-state occupation n an ominant transport moes as a function of gate an bias voltages for a symmetric evice with negative U. tron pairs enter an exit the grain only from the same lea, i.e. only the processes in Fig. (c) are responsible for the passage of current 3]. As an important consequence of this ifference, negative-u molecules act as gate-controlle rectifiers. We thank Y. Oreg an M. Wegewijs for useful iscussions. This work was supporte by NSF NER (MER), Sfb 658, an Stuienstiftung. t. Volkes. ] L. I. Glazman an R. I. Shekhter, Sov. Phys. JETP 67, 63 (988). 2] N. S. Wingreen, K. W. Jacobsen, an J. W. Wilkins, Phys. Rev. Lett. 6, 396 (988). 3] S. Braig an K. Flensberg, Phys. Rev. B 68, (23). 4] A. Mitra, I. Aleiner, an A. J. Millis, Phys. Rev. B 69, (24). 5] J. Koch, M. E. Raikh, an F. von Oppen, Phys. Rev. Lett. 95, 568 (25). 6] H. Park et al., Nature (Lonon) 47, 57 (2). 7] X. H. Qiu, G. V. Nazin, an W. Ho, Phys. Rev. Lett. 92, 262 (24). 8] L. Yu et al., Phys. Rev. Lett. 93, (24). 9] A. N. Pasupathy et al., Nano Lett. 5, 23 (25). ] P. W. Anerson, Phys. Rev. Lett. 34, 953 (975). ] C. Kraiya an D. H. Evans, J. Electroanal. Chem. 565, 29 (24), an references therein. 2] S. Kubatkin et al., Nature (Lonon) 425, 698 (23). 3] L. Grüter et al., Nanotechnology 6, 243 (25). 4] A. S. Alexanrov, A. M. Bratkovsky, an R. S. Williams, Phys. Rev. B 67, 753 (23). 5] A. S. Alexanrov an A. M. Bratkovsky, Phys. Rev. B 67, (23). 6] P. S. Cornaglia, H. Ness, an D. R. Grempel, Phys. Rev. Lett. 93, 472 (24); P. S. Cornaglia, D. R. Grempel, an H. Ness, Phys. Rev. B 7, 7532 (25); P. S. Cornaglia an D. R. Grempel, Phys. Rev. B 7, (25). 7] L. Arrachea an M. J. Rozenberg, Phys. Rev. B 72, 43(R) (25). 8] J. Mravlje, A. Ramšak, an T. Rejec, Phys. Rev. B 72,

5 5 243(R) (25). 9] A. Tarapher an P. Coleman, Phys. Rev. Lett. 66, 284 (99). 2] F. D. M. Halane, Phys. Rev. B 5, 28 (977). 2] J. R. Schrieffer an P. A. Wolff, Phys. Rev. 49, 49 (966). 22] H.-B. Schüttler an A. J. Fero, Phys. Rev. B 38, 963 (988). 23] Similar phase-space arguments apply to pair tunneling between superconuctors, see J. W. Wilkins, in Tunneling Phenomena in Solis, eite by E. Burstein an S. Lunqvist (Plenum Press, New York, 969), chap ] C. W. J. Beenakker, Phys. Rev. B 44, 646 (99). 25] D. V. Averin, A. N. Korotkov, an K. K. Likharev, Phys. Rev. B 44, 699 (99). 26] F. W. J. Hekking et al., Phys. Rev. Lett. 7, 438 (993). 27] In the presence of aitional orbitals, this remains true as long as U is smaller than the level spacing. 28] We efine sequential-tunneling processes as involving real occupation of the molecule as oppose to cotunneling uring which the molecule is only virtually occupie. 29] The generalization to asymmetric voltage splitting is straightforwar. 3] Another ifference between transport through negative- U molecules an superconucting grains lies in the absence of BCS coherence factors in the former.