Si Oxidation. SiO 2. ! A method of forming SiO 2
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1 S Oxatn! A met f frmn SO wc ue a Ma (e.., fr n mplantatn) Oxe n MOSFET Surface pavatn! Frm perfect S-SO nterface S S ( ) ( ) O ( ) ( ) SO ( ) H O SO H ( ) ( ) SO S O Oxant ffue tru te SO flm Reactn tae te S-SO nterface
2 eal-grve Mel f Oxatn Jurnal f Apple Pyc 36,, 3770 (965)! A mel tat treat xatn prce a a ere f ma tranfer retance fr te xant frm te a pae t te S-SO nterface.! Val fr an xe tcne > 300 Å. P, SO S P, δ
3 eal-grve Mel f Oxatn Jurnal f Apple Pyc 36,, 3770 (965) P, SO S P, δ! At te a-so nterface we nve Henry law. Henry law val n abence f catn effect at te nterface wc mple tat pece mvn tru te nterface mlecular P T P T HP Partal preure f te xant urce jut abve te SO urface; relate t tru eal a law
4 Ga Pae Ma Tranprt P, P, δ x0 SO x S! If tere wa n ma tranfer retance n te a pae P P an te cncentratn at te urface wul be HP! In te a pae 0 ax b x! Bunary x x δ x! Slutn ( ) δ b ( a δ )
5 Ga Pae Ma Tranprt P, F SO S P, δ! x0 F x x 0 δ ( ) ( )! a a pae ma tranfer ceffcent; /δ! Alternatve expren fr flux (epenn n rvn frce) F T ( P P ) HT ( ) ( )
6 Sl Pae Tranprt! In SO flm! Bunary cntn 0 x x x ( )! Slutn P, P, δ F SO S F F 3 F F 3 x x ( t rer xatn S-SO nterface )
7 Te Mat Te Mat - All tree fluxe mut be equal All tree fluxe mut be equal F F F F F 3 ) ( ) ( Subttute fr
8 Sme lmtn cae: ffun cntrlle rwt (lwet tep n ere ma tranfer retance cntrl te rate) r reactn rate ma tranfer rate reactn rate ffun rate >> >> 0 Fat reactn rate ffun cntrlle SO S P P HP 0
9 Sme lmtn cae: xatn reactn cntrlle << << Very lw reactn rate rxn cntrlle P P SO HP S
10 Sme lmtn cae: xatn reactn cntrlle << Fat reactn, lw a pae ma tranfer reactn an a pae ma tranfer cntrlle P, P, SO S
11 Grwt Rate Grwt Rate t N x # f xant mlecule/unt vlume f SO fr O, N x. 0 cm -3! Interate un te ntal cntn tat at t0 K t at K t N t N x x 0
12 Mxe Lnear-Parablc Law! After rearranement an lvn te quaratc Eqn. we et! Lmtn ae A! ae : Tc xe & ffun cntrlle A A B B( t τ ) N x ( t τ ) A / 4B τ A B t >> τ & << A 0 Bt!ae : Tn xe & reactn rate cntrlle ( t τ ) << A B A
13 Mxe Lnear-Parablc Law B ( t τ ) A Bt ttp://
14 T-epenence f te rwt rate : T epenence f te parablc rate cntant B! Bt A an B a Arrenu epenance n T becaue bt an ave Arrenu epenence n T e E a B N x / T ~ e E a / T e E ar / T! Actvatn enery fr ffuvty f H O n SO : 0.8 ev O n SO :.7 ev! Wet xatn fater becaue HO ~ 03 O
15 T-epenence f te rwt rate : T epenence f te lnear rate cntant B/A B A N x N x Uually >>! Arrenu epenence cme frm! Actvatn enery fr nertn nt S-S bn ~.83 ev
16 H P Steam Oxatn! Fater becaue HO ~ 03 O! ~ P! <> plane ave ener pacn tan <00> > 00
17 Harware T~700-00!Hrzntal r vertcal furnace!ramp T up lwly after lan t av wafer warpae!majr prblem partcle eneratn urn lan an unlan. New ytem are enneere uc a t mnmze frctn urn lan an unlan ttp://
18 Harware
19 Oxatn! Grwt parameter epen n te tcne an prperte requre.! Tn xe (<000 Å0. µm) wt lw care at te nterface are rwn n ry O.! Tcer xe (>0.5 µm) are rwn n wet O an/r er preure (- 5 atm), man ue f te fact tat prprtnal t preure.! Smetme -3% Hl r l ae t remve metal cntamnant! Prexatn cleann: befre xatn, wafer are cleane t elmnate ranc an nranc cntamnant " H O/H O /NH 4 OH remve ranc cntamnatn " H O/H O /Hl remve metal " Rne an pn ry
20 Ultra tn Oxe Grwt! urn te frt ~00 Å te xatn rate actually fater by apprxmately a factr f 4 " Electrc fel rven xatn (?) " Wrm mle r mcrcannel enance ffun (?) " Stre at te nterface enance (?) " Increae n xyen lublty (?)! Tn xe reme emprcal mel t B A e / L
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