M SERIES ULTRA HIGH Q CAPACITOR SPEC

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1 FEATURES: - Ultra High-Q and low ESR - Extended working range for wireless products - Extended battery life of portable devices PART NUMBER DESCRIPTION 42 M 25 N R1 B C T Size Series Rated Voltage (VDC) Dielectric Capacitance Tolerance Termination Packaging M : Ultra High Q, C=Cu/Ni/Sn Low ESR 21 (63) 42 (15) 55 (1414) 63 (168) 85 (212) 1111 (2828) 6R3= =16 25=25 5=5 11=1 21=2 251=25 51=5 N: NP R1=.1pF R5=.5pF 1R=1.pF 1=1pF 11=1pF A: ±.5pF B: ±. C: ±.25pF D: ±.5pF F: ±1% G: ±2% J: ±5% T=7 Paper Tape U=13 Paper Tape E=7 Plastic Tape Q=13 Plastic Tape Z or blank=bulk General Electrical Data Dielectric NP Size 21, 42, 55, 63, 85, 1111 Capacitance Range. to 1,pF Cap 5pF: A (±.5pF ), B (±.), C (±.25pF) Capacitance tolerance 5pF<Cap<1pF: B (±.), C (±.25pF), D (±.5pF) Cap 1pF: F (±1%), G (±2%), J (±5%) (WVDC) Q Insulation resistance (25 C) Operating temperature Temperature coefficient of capacitance Termination 6.3V, 1V,,, 5V, 1V, 2V,, 5V Cap 3pF, Q 1 Cap<3pF,Q 4+2C 1GΩ -55 C to +125 C ±3ppm/ C (±6ppm/ C for 21 with values 22pF) Ni/Sn (lead-free termination) Frontier Electronics Corp. Page 1 of E. Cochran St. Simi valley, CA 9365

2 External Dimensions Outline Case Size EIA (mm) 21 (63) 42 (15) 55 (1414) 63 (168) 85 (212) 1111 (2828) L (mm) W (mm) T (mm) Soldering Method M B (mm).6 ±.3.3 ±.3.3 ±.3 R.15 ±.5.5 ±.5 1. ±.5.5 ± / ±.2.5 ±.2.5 ±.2 R / / ± ±.15 R/W / ±.1.8±.1.8± / /-.1.5± /-.1 R / W.4 ± ±.2.8±.2.8±.2.5±.1 R / W.6±.1 R / W 2. ± ±.1.8±.1 R / W.5 ± ±.1 R 2. ± ±.2.85±.1 R / W 1.25±.2 R / ± max R.38 ±.25 Thickness Codes/Packaging Quantity Case Size Size Code Max Thickness (mm) Length (mm) Width (mm) Thickness (mm) Paper Tape Embossed Plastic Tape 7" Reel 13" Reel 7" Reel 13" Reel 21 AA.33.6 ±.3.3 ±.3.3 ±.3 15, 7, BA ±.5.5 ±.5.5 ± /-.5 1, 5, - - BC.7 1. ±.2.5 ±.2.5 ±.2 1, KA / ± ± , CA ±.1.8 ±.1.8 ±.7 4, 15, - - CC / / /-.1 4, 15, - - CD ±.2.8 ±.2.8 ±.2 4, 15, - - DB.7 2. ± ±.1.6 ±.1 4, 15, - - DC.9 2. ± ±.1.8 ±.1 4, 15, - - DD ± ± ± , 1, DE ± ±.2.85 ±.1 4, 15, - - DF ± ± ± , 1, 1111 MA / ± , - Frontier Electronics Corp. Page 2 of E. Cochran St. Simi valley, CA 9365

3 Frontier Electronics Corp. Page 3 of E. Cochran St. Simi valley, CA 9365

4 IZI (Ω) Q 1 Impedance RF15, NP, vs. 5V Frequency 1 RF15, NP, 5V Q vs. Frequency pF 3.3pF pF 6.8pF 6.8pF , 1, Frequency (MHz) 1 1 1, 1, Frequency (MHz) ESR vs. Frequency Frontier Electronics Corp. Page 4 of E. Cochran St. Simi valley, CA 9365

5 S11 (db) S11 (db) Self resonance frequency (GHz) S21 (db) Self resonance frequency (GHz) S21 (db) 25 2 RF15, NP, 5V Comparison SRF vs. Capacitance (21) S21 vs. Frequency (21) RF15, NP, 5V Measured data (<8.5GHz) Simulation data -2 2pF.5pF Capacitance (pf) Frequency (GHz) 3 25 RF3, NP, Comparison SRF vs. Capacitance (42) S21 vs. Frequency (42) RF3, NP, Measured data (<8.5GHz) Simulation data -2 2pF 2.5pF Capacitance (pf) Frequency (GHz) RF3, NP, Comparison S11 vs. Frequency (21) RF15, NP, 5V Comparison S11 vs. Frequency (42).5pF.5pF pF -6 2pF Frequency (GHz) Frequency (GHz) Frontier Electronics Corp. Page 5 of E. Cochran St. Simi valley, CA 9365

6 Frontier Electronics Corp. Page 6 of E. Cochran St. Simi valley, CA 9365

7 Item 1 Visual and Mechanical 2 Capacitance Test Condition Requirements * No remarkable defect * Dimensions conform to individual specification sheet * Shall not exceed the limits given in the detailed spec NP: Cap 3pF, Q 1, Cap<3pF,Q 4+2C X7R, X5R: (DCV) D.F. 3% Exception of D.F. 21(5V), 63.47μF, 85.18μF, μF 5V 2.5% μF 1% 63 1μF, 85 1μF, μF, 121 1μF 35V 3.5% 1% µF, 121 1μF 21.1μF,85 1μF, 121 1μF 3.5% 7% 63.33μF, μF 3 Q/ DF (Dissipation Factor) 4 Dielectric Strength Class I: NPClass I: NP Cap 1,pF 1.±.2Vrms, 1MHz±1% Cap>1,pF 1.±.2Vrms, 1KHz±1% Class II: X7R, X5R,Y5V Cap 1µF, 1.±.2Vrms, 1kHz±1% ** Cap>1µF,.5±.2Vrms, 12Hz±2% ** Test condition:.5±.2vrms,1khz±1% X7R: (1V), 85=16 (6.3V&1V) X5R: (6.3V), (6.3V), (1V),63=16 (6.3V) *To apply voltage( 1V) 25%. *Duration: 1 to 5 sec. *Charge & discharge current less than 5mA. *To apply voltage: 2V ~3V & LD series 2 times V DC 5V ~ 999V 1.5 times V DC 1V ~ 3V 1.2 times V DC *Cut-off, set at 1mA *TEST= 15 sec. *RAMP= 1V 1% 1% 2% μF 4V 5V 7% 35V 7% (C<1.μF) (C 1.μF) 3.5% 6.3V 1% Y5V: 7% 9% D.F. 7% 9% 9% 1V 2% 42.47μF 6.3V 2% 1% 42.1μF,63.47μF, μF, 21.1μF,42.33μF, 63.15μF, 85.68μF, μF, μF 42.22uF, 63.68μF,85 2.2μF, μF, μF 42.47μF,63.1μF, 85.33μF,126 1μF, μF 42.68μF,63.47μF, μF, μF, Cap 1μF 42.68μF, 63.68μF 42.22μF μF, μF,126 1μF, μF, μF, Cap 1μF *No evidence of damage or flash over during test μF,42.33μF,63.33μF,85 2.2μF, μF,121 22μF 21.1μF, 42 1μF 21.1μF,42 1μF,63 1μF, μF, μF :121 1μF 63.1μF, 85.47μF, μF, Cap 1μF 1GΩ or RxC 5Ω-F whichever is lower. Class II (X7R, X7E, X5R, Y5V): 5 Insulation Resistance 6 Temperature Coefficient To apply rated voltage for max. 12 sec. Rated Voltage: 2V ~ 63V >63V With no electrical load. T.C. Operating Temp NPO (CG) NPO (CH) -55~125 C at 25 C NPO (CJ) X7R X5R -55~ 85 C at 25 C Y5V -25~ 85 C at 2 C 1V: X7R 5V:63 1µF,85 1µF, μF, µF 35V:85 2.2µF,121 1μF :42 1µF,63 2.2µF,85 2.2µF, 126 1µF,121 1µF :42.22µF,63 1µF,85 2.2µF, 126 1µF,121 47µF 1V:21 47nF,42.47µF,63.47µF, µF, To apply rated voltage (5V max.) for >1GΩ or 1Ω-F whichever is lower. 6 sec. To apply 5V for 6sec. >1GΩ T.C. Capacitance Change NPO (CG) Within ±3ppm/ C NPO (CH) Within ±6ppm/ C NPO (CJ) Within ±12ppm/ C X7R Within ±15% X5R Within ±15% Y5V Within +3%/-8% Insulation Resistance 1GΩ or RxC 1 Ω-F whichever is lower. 7 Adhesive Strength of Termination *Pressurizing force: 21: 2N 42 & 63: 5N >63: 1N *Test time:1 ±1 sec * No remarkable damage or removal of the terminations. Frontier Electronics Corp. Page 7 of E. Cochran St. Simi valley, CA 9365

8 Item 8 Vibration Resistance 9 Solderability 1 Bending Test 11 Resistance to Soldering Heat 12 Temperature Cycle Test Condition * Vibration frequency: 1~55 Hz/min. * Total amplitude: 1.5mm * Test time: 6 hours (Two hrs each in three mutually perpendicular directions) * Measurement to be made after keeping at room temp. for 24±2 hours * Solder temperature: 235±5 C * Dipping time: 2±.5 sec. *The middle part of substrate shall be pressurized by means of the pressurizing rod at a rate of approximately 1 mm per second until the deflection becomes 1 mm and then the pressure shall be maintained for 5±1 sec. *Measurement to be made after keeping at room temp. for 24±2 hrs. * Solder temperature: 26±5 C * Dipping time: 1±1 sec * Preheating: 12 to 15 C for 1 minute before immersing the capacitor in an eutectic solder. * Before initial measurement (Class II only): Perform 15+/-1 C for 1 hr and then set for 24±2 hrs at room temp. * Measurement to be made after keeping at room temp. for 24±2 hrs. * Conduct the five cycles according to the temperatures and time. Step Temp. ( C) Time (min.) 1 Min. operating temp. +/-3 3±3 2 Room temp. 2~3 3 Max. operating temp. +3/- 3±3 4 Room temp. 2~3 * Cap change and Q/D.F.: To meet initial spec. 95% min. coverage of all metalized area. Requirements * Capacitance change: NP: within ±5% or.5pf whichever is larger X7R, X7E, X5R: within ±12.5% Y5V: within ±3% (This capacitance change means the change of capacitance under specified flexure of substrate from the capacitance measured before the test.) * Capacitance change: NP: within ±2.5% or.25pf whichever is larger X7R, X7E, X5R: within ±7.5% Y5V: within ±2% * Q/D.F., I.R. and dielectric strength: To meet initial requirements. * 25% max. leaching on each edge. * Capacitance change NP: within ±2.5% or.25pf whichever is larger X7R, X7E, X5R: within ±7.5% Y5V: within ±2% * Q/D.F., I.R. and dielectric strength: To meet initial requirements. * Before initial measurement (Class II only): Perform 15+/-1 C for 1 hr and then set for 24±2 hrs at room temp. * Measurement to be made after keeping at room temp. for 24±2 hrs. * Cap change: NP: within ±5% or.5pf whichever is larger X7R, X7E, X5R: 1V**,within ±12.5%;6.3V within ±25%;TT series,within ±25% **1V:63 4.7μF;42 1μF;21.1μF, within ±25%; Y5V: 1V, within ±3%; 6.3V, within +3/-4% * Q/D.F. value: NP: More than 3pF Q 35, 1pF C 3pF, Q C,Less than 1pF Q 2+1C X7R, X5R: Rated vol. D.F. 5V 3% 6% 1% 2% 35V 2% 1% 14% 21(5V); 63.47μF; 85.18μF; μF μF 63 1μF; 85 1μF; μF; 121 1μF µF;121 1μF 21.1μF;85 1μF; 121 1μF 63.33μF; μF 6 6.8μF121 22μF 13 Humidity (Damp Heat) Steady State * Test temp.: 4±2 C * Humidity: 9~95% RH * Test time: 5+24/-hrs. * Before initial measurement (Class II only): Perform 15 +/-1 C for 1 hr and then set for 24±2 hrs. at room temp. * Measurement to be made after keeping at room temp. for 24±2 hrs. 1% 1V 7.5% 2% 6.3V 3% 4V X7R/X7E, LD 2% series : DF 3% Y5V: Rated vol. D.F. 5V 7.5% 1% 35V 1% 7.5% 1% 1% (C<1.μF) 2% (C 1.μF) 1V 2% 2% 3% 6.3V 3% 63.15μF;85.68μF; μF; μF 21.1μF;42.33μF;63.68μF;85 2.2μF; μF; μF 21.12μF; 42.33μF; 63.33μF;85 2.2μF; μF; 21.1μF ;42 1μF 21.1μF;42 1μF;63 1μF; μF; 63.1μF; 85.47μF; μF; Cap 1μF 42.47μF;63.1μF;85.33μF; 126 1μF; μF 42.68μF;63.47μF; μF; μF; Cap 1μF 42.68μF; 63.68μF 42.22μF μF;85 3.3μF;126 1μF;121 22μF; μF; Cap 1μF 42.47μF *I.R.: 1V, 1GΩ or 5 Ω-F whichever is lower. Class II (X7R, X7E, X5R, Y5V) 1V: X7R 5V:63 1µF;85 1µF; μF; µF :42 1µF;63 2.2µF;85 2.2µF;126 1µF;121 1µF :42.22µF;63 1µF;85 2.2µF;126 1µF;121 47µF 1V:21 47nF;42.47µF;63.47µF;85 2.2µF; µF;121 47µF Insulation Resistance 1GΩ or RxC 1 Ω-F whichever is lower. Frontier Electronics Corp. Page 8 of E. Cochran St. Simi valley, CA 9365

9 Item Test Condition Requirements Cap change: NP: ±7.5% or.75pf whichever is larger. X7R, X7E, X5R: 1V**,within ±12.5%;6.3V within ±25%; **1V:63 4.7μF;42 1μF;21.1μF, within ±25%; Y5V: 1V, within ±3%; 6.3V, within +3/-4% Q/D.F. value: NP: C 3pF,Q 2;C<3pF, Q 1+1/3C X7R, X5R: 14 Humidity (Damp Heat) Load * Test temp.: 4±2 C * Humidity: 9~95%RH * Test time: 5+24/- hrs. * Voltage:.(Max.5V) * Before initial measurement (Class II only): To apply test voltage for 1hr at 4 C and then set for 24±2 hrs at room temp.* Measurement to be made after keeping at room temp. for 24±2 hrs. 5V D.F. 3% 6% 1% 2% 35V 2% 1V 1% 14% 1% 2% 6.3V 3% 4V 2% X7R/X7E, LD series : DF 3% Y5V: 7.5% D.F. 5V 7.5% 1% 35V 1% (C<1.μF) 7.5% 1% 1% 2% (C 1.μF) 2% 1V 2% 3% 6.3V 3% 21(5V);63.47μF; 85.18μF; μF μF 63 1μF; 85 1μF; μF; 121 1μF µF;121 1μF Exception of D.F. 21.1μF;85 1μF; 121 1μF 63.33μF; μF 42.1μF;63.47μF;85 2.2μF; μF;121 22μF 63.15μF;85.68μF; μF; μF 21.1μF;42.33μF;63.68μF;85 2.2μF; μF; μF 21.12μF;42.33μF; 63.33μF;85 2.2μF; μF; μF 21.1μF ;42 1μF 21.1μF;42 1μF;63 1μF; μF;126 47μF;121 1μF 63.1μF; 85.47μF; μF; Cap 1μF 42.47μF;63.1μF;85.33μF;126 1μF; μF 42.68μF;63.47μF; μF;121 22μF; Cap 1μF 42.68μF; 63.68μF 42.22μF μF;85 3.3μF;126 1μF;121 22μF; μF; Cap 1μF 42.47μF *I.R.: 1V, 5MΩ or 25 Ω-F whichever is lower. Class II (X7R, X7E, X5R, Y5V) 1V: X7R 5V:63 1µF;85 1µF; μF; µF :42 1µF;63 2.2µF;85 2.2µF;126 1µF;121 1µF :42.22µF;63 1µF;85 2.2µF;126 1µF;121 47µF 1V:21 47nF;42.47µF;63.47µF;85 2.2µF; µF;121 47µF Insulation Resistance 5MΩ or RxC 5 Ω-F whichever is lower. *Test temp.: NP, X7R/X7E: 125±3 C X5R, Y5V: 85±3 C *Test time: 1+24/- hrs. *To apply voltage: (1) 6.3V or C 1µF 15% of rated voltage: (2) 1V Ur<5V: 2% of rated voltage. (3) 5V: 15% of rated voltage. (4) Ur 63V: 12% of rated voltage.(5) 1% of rated voltage for below range: Cap change: NP: ±3.% or ±.3pF whichever is larger X7R, X7E, X5R: 1V**,within ±12.5%;6.3V within ±25%; **1V:63 4.7μF;42 1μF;21.1μF, within ±25%; Y5V: 1V, within ±3%; 6.3V, within +3/-4% Q/D.F. value: NP: More than 3pF, Q 35; 1pF C<3pF, Q C; Less than 1pF, Q 2+1C X7R, X5R: 15 High Temperature Load (Endurance) Size Dielectric D.F. 21 X5R/X7R 6.3V,1V 6% 42 X5R/X7R 6.3V,1V 5V 3% 1% 63 X5R/X7R 6.3V,1V 2% 85 X5R/X7R 6.3V 35V 2% 126 X5R/X7R 6.3V 1% NP 3V 14% (6)15% of rated voltage for below range: 1% Size Dielectric Capacitance X5R/X7R 1V,, C.22μF 1V 7.5% Y5V C.47μF 2% X5R/X7R 1V, C 1.μF 6.3V 3% Y5V C 2.2μF 4V 2% X5R/X7R 1V C 4.7μF X7R: DF 3% Y5V C 4.7μF Y5V: *Before initial measurement (Class II only): To apply test voltage for 1hr at test temp. and then set for 24±2 hrs at room temp. *Measurement to be made after keeping at room temp. for 24±2 hrs. D.F. 5V 7.5% 1% (C<1.μF) 7.5% 1% 1% (C 1.μF) 2% 1V 2% 3% 2% 42.22μF 6.3V 3% *I.R.: 1V, 1GΩ or 5 Ω-F whichever is lower. 21(5V);63.47μF; 85.18μF; μF μF 63 1μF; 85 1μF; μF; 121 1μF µF;121 1μF 21.1μF;85 1μF; 121 1μF 63.33μF; μF 42.1μF;63.47μF;85 2.2μF; μF;121 22μF 63.15μF;85.68μF; μF; μF 21.1μF;42.33μF; 63.68μF;85 2.2μF; μF; μF 21.12μF;42.33μF; 63.33μF;85 2.2μF; μF; μF 21.1μF ;42 1μF 21.1μF;42 1μF; 63 1μF;85 4.7μF; μF; 121 1μF μF; 85.47μF; μF;Cap 1μF 42.47μF;63.1μF; 85.33μF;126 1μF; μF 42.68μF;63.47μF; μF;121 22μF;Cap 1μF 42.68μF; 63.68μF μF;85 3.3μF;126 1μF; μF; μF;Cap 1μF 42.47μF Class II (X7R, X7E, X5R, Y5V): 1V: X7R 5V:63 1µF;85 1µF; μF; µF :42 1µF;63 2.2µF; µF;126 1µF;121 1µF :42.22µF;63 1µF; µF;126 1µF;121 47µF 1V:21 47nF;42.47µF; 63.47µF;85 2.2µF; µF;121 47µF 6.3V ; 4V Insulation Resistance 1GΩ or RxC 1 Ω-F whichever is lower. Frontier Electronics Corp. Page 9 of E. Cochran St. Simi valley, CA 9365

10 Name Ceramic material Inner electrode Inner layer 4 Termination Middle layer 5 Outer layer NP/X7R NPO/X7R/X5R/Y5V BaTiO 3 based Ni Cu Ni Sn Storage and handling (1) Products should be stored at 5 to 4 C ambient temperature and 2 to 7%. relative humidity. (2) It is recommended that the product be used within one year from shipment. After one year from shipment, solderability should be checked. Cautions a. Corrosive gas reacts with the terminal electrodes of capacitors. Do not store capacitors in the proximity of corrosive gas (e.g., hydrogen sulfide, sulfur dioxide, chlorine, ammonia gas etc.) otherwise there can be solderability issues. b. In a corrosive atmosphere, solderability might be degraded, and/or silver migration may occur which can cause lower reliability. c. Dewing caused by rapid humidity changes and/or photochemical changes of the terminal electrode (caused by direct sunlight contact) can affect the solderability and electrical performance. Do not store capacitors under direct sunlight or in dewing conditions. Recommended reflow profile for SnAgCu solder paste: Recommended wave profile for SnAgCu solder paste: 4 / sec max Over 6sec at least by natural cooling Frontier Electronics Corp. Page 1 of E. Cochran St. Simi valley, CA 9365