From Order to Disorder
|
|
- Sabrina Bridges
- 5 years ago
- Views:
Transcription
1 ORGANIC ELECTRONICS Principles, devices and applications Charge Transport D. Natali Milano, Novembre 011 From Order to Disorder From delocalized to localized states 1
2 The Two-Site approximation a,v a b,v b E 1 E Splitting& delocalization E V a,v b E 1 Mott Electronic processes in non-crystalline materials, Clarendon Press 1979 The Two-Site approximation a,v a b,v b a,v a a,v b DV E E 1 E E 1 E Splitting& delocalization V a,v b E Localization V a V b E 1 Mott Electronic processes in non-crystalline materials, Clarendon Press 1979
3 Density of States Due to energetic diosrder DOS is gaussian (or an onential tail), having s of about mev. Bassler, Phys. Stat. Sol. B 175(1993) 15 Density of States Due to energetic diosrder DOS is gaussian (or an onential tail), having s of about mev. Bassler, Phys. Stat. Sol. B 175(1993) 15 3
4 Elelctron Energy Hopping Charge carriers are localized Transport occurs by hopping between localized states HoP! Hopping thermally activated tunnelling L L 4
5 Elelctron Energy Hopping thermally activated tunnelling L L Hopping: effect of temperature (1) L r 5
6 Hopping: effect of temperature () L High T: p [ HOP] r 1 L Nearest neighbor fixed range hopping Hopping: effect of temperature (3) L intermediate T: p [ HOP] r L Variable range hopping: an optimum hopping distance Madelung, Introduction to Solid State Theory, Springer Verlag
7 E E X Axis Title X Axis Title Hopping & Gaussian DOS: transport B energy(1) L E TR A level of most probable excitation EXISTS And does not depend upon the site starting energy (for tail states ) Y Axis Title Schmechel, PHYS.REV. B 66, 3506 ~00 Hopping & Gaussian DOS: effect of low density B L s E TR 9 s E Excitation from Y Axis Title E ETR E s to E TR 3 7
8 E X Axis Title L Hopping & Gaussian DOS: effect of low density B s E TR 9 s E Excitation from Y Axis Title E ETR E s to E TR 3 Hopping & Gaussian DOS: effect of high density B L E TR E F 0 E ETR EF Excitation Y Axis from Title E F to E TR Coehoorn et al., PHYS. REV. B 7,
9 Coehoorn Phys rev B L Hopping & Gaussian DOS: effect of high density B E TR E F ETR EF 5 s E F Excitation Y Axis Title from E to E TR F 9 Coehoorn et al., PHYS. REV. B 7, Mobility ression μ(t, n, F) = μ 0 αa 0.4σ g 1 (F, T) g (F, T) Density enhancement At higher density, the E F to E TR distance diminishes 9
10 Coehoorn Phys rev B Coehoorn Phys rev B Mobility ression μ(t, n, F) = μ 0 αa 0.4σ g 1 (F, T) g (F, T) Density enhancement E-field enhancement The applied field modifies energetic barriers Mobility ression μ(t, n, F) = μ 0 αa 0.4σ g 1 (F, T) g (F, T) Density enhancement E-field enhancement 10
11 energy Coehoorn Phys rev B Mobility ression μ(t, n, F) = μ 0 αa 0.4σ g 1 (F, T) g (F, T) Density enhancement Higher at larger disorder E-field enhancement Higher at larger disorder Einstein relation D g3( T, n) e = DOS center =6 Chemical potential Density of Occupied States A disordered s.c. is practically always degenerate! Tessler Appl. Phys. Lett., Vol. 80, No. 11, 18 March 00 11
12 Einstein relation D g3( T, n) e Diffusion enhancement g3( T, n) Diffusion vs. Mobility enhancement relation Diffusion enhancement g3( T, n) D g3( T, n) e Density enhancement 1
13 Hopping and spatial current distribution s=75mev s=150mev Bobbert PHYSICAL REVIEW B 79, Correlated Gaussian Disorder Model(1) The energetic disorder is spatially correlated The deepest valley are the widest ones 13
14 Correlated Gaussian Disorder Model() The electric field lowers the escape barriers The deepest (and widest) valleys are more affected Correlated Gaussian Disorder Model(3) Intermediate limiting traps Few deep traps Many shallow traps 14
15 Correlated Gaussian Disorder Model(4) Traps width W is electric field dependent: for energy autocorrelation in the form Barrier lowering and hence is Intermediate limiting traps W 1 1 p 1 p r, eew W E E p p 1 p=1, dipolar disorder PooleFrenkel behavior Parris, Phys. Stat. Sol. (b) 18, 47 (000) Correlated vs Uncorrelated μ(t, n, F) μ 0 αa 0.9σ μ(t, n, F) μ 0 αa 0.4σ Bobbert Organic Electronics 10 (009)
16 in addition: Coulombic interactions Zhou PHYSICAL REVIEW B 75, Bobbert et al PHYSICAL REVIEW B 83, (011) Polarons(1) Relaxation of excess slow carriers 16
17 Polarons() Relaxation of excess slow carriers Large polaron: Increased effective mass Small polaron: self-localized in a potential well Sources: intramolecular vibrations Intermolecular vibrations Electronic polarization Distortion energy Electronic energy Polarons(3) Role of the number of p carbon atoms Burdett, Chemical Bonding in Solids, Oxford University press
18 Polaron Hopping 1 Thermal fluctuations create Coincidence Event Holstein, Ann.Phys , 35 Disorder and polarons Parris Phys.Rev.Lett. 87, 001, Polaronic effect + Energetic Disorder Charge density dependence almost supressed in the polaron model Fischuk PHYSICAL REVIEW B 76,
19 Elelctron Energy Polaronic effect + Energetic Disorder The transport energy lies higher in the polaron model -> The relative change due tue Fermi level lifting is smaller Fischuk PHYSICAL REVIEW B 76, Back to Hopping Rate E un processo di tunnelling termicamente attivato L L 19
20 Xtal structure and transfer integral: two etylene molecules L Mixed bonding/antibonding interaction Full (anti)bonding interaction HOMO splitting larger than LUMO splitting Bredas, Chem. Rev. 004, 104, ; 007, 107, 96 p 6T dimer: intermolecular distance effect [HOP] L 0
21 6T dimer: translation effect L H HOMO oscillations larger than LUMO ones L Electron transfer rates: electronic coupling and reorganization energy Hutchison, J. AM. CHEM. SOC. 005, 17,
22 Single Crystal: bandlike transport? Large e-coupling fluctuations -> dynamic disorder ->charge localizaton but, band like transport, T -n Troisi, J. Phys. Chem. A 006, 110, , Adv. Mater. 007, 19, Doping Interstitial: the problem of stability for small dopants (eg metals: Li +, K +, I 3-..) Molecular doping is better The effect of the dielectric constant (binding energy/dopant density) Gregg, Chemistry of Materials, 16, 004, p
23 Molecular Doping(1) n-type doping Leo et al. Chem. Rev. 007, 107, Molecular Doping(): CN substitution result target The supposed dopant acts as a trap!!! Vaid, Chem.Mater 003, 15, 49 3
24 Molecular Doping() Leo et al. Chem. Rev. 007, 107, N-type doping 4
25 The End 5
6.5 mm. ε = 1%, r = 9.4 mm. ε = 3%, r = 3.1 mm
Supplementary Information Supplementary Figures Gold wires Substrate Compression holder 6.5 mm Supplementary Figure 1 Picture of the compression holder. 6.5 mm ε = 0% ε = 1%, r = 9.4 mm ε = 2%, r = 4.7
More informationCHARGE CARRIERS PHOTOGENERATION. Maddalena Binda Organic Electronics: principles, devices and applications Milano, November 23-27th, 2015
CHARGE CARRIERS PHOTOGENERATION Maddalena Binda Organic Electronics: principles, devices and applications Milano, November 23-27th, 2015 Charge carriers photogeneration: what does it mean? Light stimulus
More informationarxiv: v1 [cond-mat.dis-nn] 31 Aug 2011
Suppression of the virtual Anderson transition in a narrow impurity band of doped quantum well structures. N.V. Agrinskaya, V.I. Kozub, and D.S. Poloskin Ioffe Physical-Technical Institute of the Russian
More informationMIT Amorphous Materials
MIT 3.071 Amorphous Materials 10: Electrical and Transport Properties Juejun (JJ) Hu 1 After-class reading list Fundamentals of Inorganic Glasses Ch. 14, Ch. 16 Introduction to Glass Science and Technology
More informationMetal Organic interfaces
ORGANIC ELECTRONICS Principles, devices and applications Metal Organic interfaces D. Natali Milano, 23-27 Novembre 2015 Outline general concepts energetics Interfaces: tailoring injection mechanisms Thermal
More informationorganic semiconductors Henning Sirringhaus
Charge transport physics of highmobility organic semiconductors Henning irringhaus Organic electronics tatus and opportunities OLED Existing markets Emerging applications Advanced prototypes Next generation
More informationCHARGE TRANSPORT (Katharina Broch, )
CHARGE TRANSPORT (Katharina Broch, 27.04.2017) References The following is based on these references: K. Seeger Semiconductor Physics, Springer Verlag, 9 th edition 2004 D. Jena Charge Transport in Semiconductors
More informationSupporting Information
Supporting Information Fluorination of Metal Phthalocyanines: Single-Crystal Growth, Efficient N-Channel Organic Field-Effect Transistors, and Structure- Property Relationships Hui Jiang 1*, Jun Ye 2,
More informationSurface Transfer Doping of Diamond by Organic Molecules
Surface Transfer Doping of Diamond by Organic Molecules Qi Dongchen Department of Physics National University of Singapore Supervisor: Prof. Andrew T. S. Wee Dr. Gao Xingyu Scope of presentation Overview
More informationFermi level, work function and vacuum level
Fermi level, work function and vacuum level Journal: Materials Horizons Manuscript ID MH-MRV-08-2015-000160.R1 Article Type: Focus Date Submitted by the Author: 07-Oct-2015 Complete List of Authors: Kahn,
More informationCarrier heating in disordered organic semiconductors
Carrier heating in disordered organic semiconductors Yevgeni Preezant and Nir Tessler* Microelectronic & Nanoelectronic Centers, Electrical Engineering Department, Technion Israel Institute of Technology,
More informationCalculating Band Structure
Calculating Band Structure Nearly free electron Assume plane wave solution for electrons Weak potential V(x) Brillouin zone edge Tight binding method Electrons in local atomic states (bound states) Interatomic
More informationELEMENTARY BAND THEORY
ELEMENTARY BAND THEORY PHYSICIST Solid state band Valence band, VB Conduction band, CB Fermi energy, E F Bloch orbital, delocalized n-doping p-doping Band gap, E g Direct band gap Indirect band gap Phonon
More informationTriplet state diffusion in organometallic and organic semiconductors
Triplet state diffusion in organometallic and organic semiconductors Prof. Anna Köhler Experimental Physik II University of Bayreuth Germany From materials properties To device applications Organic semiconductors
More informationMinimal Update of Solid State Physics
Minimal Update of Solid State Physics It is expected that participants are acquainted with basics of solid state physics. Therefore here we will refresh only those aspects, which are absolutely necessary
More informationBasic cell design. Si cell
Basic cell design Si cell 1 Concepts needed to describe photovoltaic device 1. energy bands in semiconductors: from bonds to bands 2. free carriers: holes and electrons, doping 3. electron and hole current:
More informationBottom-up modelling of charge transport in organic semiconductors
Bottom-up modelling of charge transport in organic semiconductors David L. Cheung Department of Chemistry & Centre for Scientific Computing University of Warwick LCOPV 2010 Boulder 7th-10th August 2010
More informationNanotechnology and Solar Energy. Solar Electricity Photovoltaics. Fuel from the Sun Photosynthesis Biofuels Split Water Fuel Cells
Nanotechnology and Solar Energy Solar Electricity Photovoltaics Fuel from the Sun Photosynthesis Biofuels Split Water Fuel Cells Solar cell A photon from the Sun generates an electron-hole pair in a semiconductor.
More informationDrift diffusion simulation of organic semiconducting devices
Bachelor Research Project Drift diffusion simulation of organic semiconducting devices J.A. Postma July 2014 Supervisors: Dr. R.W.A. Havenith N.J. van der Kaap Dr. L.J.A. Koster Abstract This report contains
More informationAdvanced Simulation Methods for Charge Transport in OLEDs
FLUXiM Advanced Simulation Methods for Charge Transport in OLEDs Evelyne Knapp, B. Ruhstaller Overview 1. Introduction 2. Physical Models 3. Numerical Methods 4. Outlook www.icp.zhaw.ch ICP Team Interdisciplinary
More informationOrganic Molecular Solids
Markus Schwoerer, Hans Christoph Wolf Organic Molecular Solids BICENTENNIAL BICENTENNIAL WILEY-VCH Verlag GmbH & Co. KGaA VII Contents 1 Introduction 1 1.1 What are Organic Solids? 1 1.2 What are the Special
More informationCharge transport in Disordered Organic Semiconductors. Eduard Meijer Dago de Leeuw Erik van Veenendaal Teun Klapwijk
Charge transport in Disordered Organic Semiconductors Eduard Meijer Dago de Leeuw Erik van Veenendaal eun Klapwijk Outline Introduction: Ordered vs. Disordered semiconductors he field-effect transistor
More informationCharge carriers photogeneration. Maddalena Binda Organic Electronics: principles, devices and applications Milano, November 26-29th, 2013
Charge carriers photogeneration Maddalena Binda Organic Electronics: principles, devices and applications Milano, November 26-29th, 2013 Charge carriers photogeneration: what does it mean? Light stimulus
More informationDynamics of Electrons at Organic/Dielectric Interfaces
Dynamics of Electrons at Organic/Dielectric Interfaces S. Fratini 1 (simone.fratini@grenoble.cnrs.fr) G. Rastelli 1,2, S. Ciuchi 2, A. F. Morpurgo 3 1 LEPES, CNRS Grenoble, France 2 INFM-CNR SMC and Dipartimento
More informationCharge Extraction from Complex Morphologies in Bulk Heterojunctions. Michael L. Chabinyc Materials Department University of California, Santa Barbara
Charge Extraction from Complex Morphologies in Bulk Heterojunctions Michael L. Chabinyc Materials Department University of California, Santa Barbara OPVs Vs. Inorganic Thin Film Solar Cells Alta Devices
More informationMeghan P. Patankar, Kapil Joshi a and K.L.Narasimhan b. Homi Bhabha Road, Colaba, Mumbai
Study of F4TCNQ dopant diffusion using transport measurements in organic semiconductors Meghan P. Patankar, Kapil Joshi a and K.L.Narasimhan b Dept. Of Condensed Matter and Materials Science, Tata Institute
More informationSemiconductor Polymer
Semiconductor Polymer Organic Semiconductor for Flexible Electronics Introduction: An organic semiconductor is an organic compound that possesses similar properties to inorganic semiconductors with hole
More informationOrganic Electronic Devices
Organic Electronic Devices Week 5: Organic Light-Emitting Devices and Emerging Technologies Lecture 5.5: Course Review and Summary Bryan W. Boudouris Chemical Engineering Purdue University 1 Understanding
More informationChapter 6 ELECTRICAL CONDUCTIVITY ANALYSIS
Chapter 6 ELECTRICAL CONDUCTIVITY ANALYSIS CHAPTER-6 6.1 Introduction The suitability and potentiality of a material for device applications can be determined from the frequency and temperature response
More informationLecture 12. Electron Transport in Molecular Wires Possible Mechanisms
Lecture 12. Electron Transport in Molecular Wires Possible Mechanisms In Lecture 11, we have discussed energy diagrams of one-dimensional molecular wires. Here we will focus on electron transport mechanisms
More informationTheoretical Studies of Self-Diffusion and Dopant Clustering in Semiconductors
phys. stat. sol. (b) 233, No., 24 30 (2002) Theoretical Studies of Self-Diffusion and Dopant Clustering in Semiconductors B. P. Uberuaga )(a), G. Henkelman (b), H. Jónsson (b, c), S. T. Dunham (d), W.
More informationLecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations
Lecture 1 OUTLINE Basic Semiconductor Physics Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Reading: Chapter 2.1 EE105 Fall 2007 Lecture 1, Slide 1 What is a Semiconductor? Low
More informationAdsorption, desorption, and diffusion on surfaces. Joachim Schnadt Divsion of Synchrotron Radiation Research Department of Physics
Adsorption, desorption, and diffusion on surfaces Joachim Schnadt Divsion of Synchrotron Radiation Research Department of Physics Adsorption and desorption Adsorption Desorption Chemisorption: formation
More informationThe Peierls distortion seen in 1D chains: The simplest model for a gap.
The Peierls distortion seen in 1D chains: The simplest model for a gap. fold back halve distort E k Note that we go from being valence-imprecise to being valence precise: Now two electrons per unit cell.
More informationStrong Correlation Effects in Fullerene Molecules and Solids
Strong Correlation Effects in Fullerene Molecules and Solids Fei Lin Physics Department, Virginia Tech, Blacksburg, VA 2461 Fei Lin (Virginia Tech) Correlations in Fullerene SESAPS 211, Roanoke, VA 1 /
More informationPolarons in linear chains of fullerenes
Polarons in linear chains of fullerenes V. A. Levashov, A. A. Remova, and V. R. Belosludov a) Institute of Inorganic Chemistry, 630090 Novosibirsk, Russia Submitted 6 September 1996 Pis ma Zh. Éksp. Teor.
More informationORGANIC SEMICONDUCTOR 3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA)
ORGANIC SEMICONDUCTOR 3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA) Suvranta Tripathy Department of Physics University of Cincinnati Cincinnati, Ohio 45221 March 8, 2002 Abstract In the last decade
More informationSupplementary Figure 1. Crystal packing of pentacene.
t 3 t 4 t 1 t 2 Supplementary Figure 1. Crystal packing of pentacene. The largestholecharge transfer integrals are shown in red:t 1 = 75 mev, t 2 = 32 mev, t 3 = 20 mev, t 4 = 6 mev. Note that IRactive
More informationSheng S. Li. Semiconductor Physical Electronics. Second Edition. With 230 Figures. 4) Springer
Sheng S. Li Semiconductor Physical Electronics Second Edition With 230 Figures 4) Springer Contents Preface 1. Classification of Solids and Crystal Structure 1 1.1 Introduction 1 1.2 The Bravais Lattice
More informationOrganic Conductors and Superconductors: signatures of electronic correlations Martin Dressel 1. Physikalisches Institut der Universität Stuttgart
Organic Conductors and Superconductors: signatures of electronic correlations Martin Dressel 1. Physikalisches Institut der Universität Stuttgart Outline 1. Organic Conductors basics and development 2.
More information2) Atom manipulation. Xe / Ni(110) Model: Experiment:
2) Atom manipulation D. Eigler & E. Schweizer, Nature 344, 524 (1990) Xe / Ni(110) Model: Experiment: G.Meyer, et al. Applied Physics A 68, 125 (1999) First the tip is approached close to the adsorbate
More informationSébastien FORGET. Laboratoire de Physique des Lasers Université Paris Nord P13. www-lpl.univ-paris13.fr:8088/lumen/
OLEDs Basic principles, technology and applications Sébastien FORGET Laboratoire de Physique des Lasers Université Paris Nord P13 www-lpl.univ-paris13.fr:8088/lumen/ Paris Nord University (Paris 13) This
More informationOrganic solar cells. State of the art and outlooks. Gilles Horowitz LPICM, UMR7647 CNRS - Ecole Polytechnique
Organic solar cells. State of the art and outlooks Gilles Horowitz LPICM, UMR7647 CNRS - Ecole Polytechnique Solar energy Solar energy on earth: 75,000 tep/year 6000 times the world consumption in 2007
More informationESE 372 / Spring 2013 / Lecture 5 Metal Oxide Semiconductor Field Effect Transistor
Metal Oxide Semiconductor Field Effect Transistor V G V G 1 Metal Oxide Semiconductor Field Effect Transistor We will need to understand how this current flows through Si What is electric current? 2 Back
More informationThickness scaling of space-charge-limited currents in organic layers with field- or density-dependent mobility
Early View publication on www.interscience.wiley.com (issue and page numbers not yet assigned; citable using Digital Object Identifier DOI) Original Paper phys. stat. sol. (a), 1 6 (26) / DOI 1.12/pssa.2622248
More information2.626 Fundamentals of Photovoltaics
MIT OpenCourseWare http://ocw.mit.edu 2.626 Fundamentals of Photovoltaics Fall 2008 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms. Charge Separation:
More informationElectronics go everywhere
The Chemistry, Physics and Engineering of Organic Light Emitting Diodes George G. Malliaras Department of Materials Science and Engineering Cornell University Electronics go everywhere Pioneer e-ink &
More informationChapter 6. Electronic spectra and HOMO-LUMO studies on Nickel, copper substituted Phthalocyanine for solar cell applications
Chapter 6 Electronic spectra and HOMO-LUMO studies on Nickel, copper substituted Phthalocyanine for solar cell applications 6.1 Structures of Ni, Cu substituted Phthalocyanine Almost all of the metals
More information3.23 Electrical, Optical, and Magnetic Properties of Materials
MIT OpenCourseWare http://ocw.mit.edu 3.23 Electrical, Optical, and Magnetic Properties of Materials Fall 2007 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms.
More informationSemiconductor Physics and Devices
The pn Junction 1) Charge carriers crossing the junction. 3) Barrier potential Semiconductor Physics and Devices Chapter 8. The pn Junction Diode 2) Formation of positive and negative ions. 4) Formation
More informationTheoretical Studies of Self-Diffusion and Dopant Clustering in Semiconductors
phys. stat. sol. (b) zzz, No. z, zzz zzz (2002) Theoretical Studies of Self-Diffusion and Dopant Clustering in Semiconductors B.P. Uberuaga )(a), G. Henkelman (b), H. Jónsson (b) (c), S.T. Dunham (d),
More informationOutline. Introduction: graphene. Adsorption on graphene: - Chemisorption - Physisorption. Summary
Outline Introduction: graphene Adsorption on graphene: - Chemisorption - Physisorption Summary 1 Electronic band structure: Electronic properties K Γ M v F = 10 6 ms -1 = c/300 massless Dirac particles!
More informationConduction Modeling in Mixed Alkali Borate Glasses
International Journal of Pure & Applied Physics ISSN 0973-1776 Vol.1 No.2 (2005), pp. 191-197 Research India Publications http://www.ripub lication.com/ijpap.htm Conduction Modeling in Mixed Alkali Borate
More information2D MBE Activities in Sheffield. I. Farrer, J. Heffernan Electronic and Electrical Engineering The University of Sheffield
2D MBE Activities in Sheffield I. Farrer, J. Heffernan Electronic and Electrical Engineering The University of Sheffield Outline Motivation Van der Waals crystals The Transition Metal Di-Chalcogenides
More informationDipolar clusters and ferroelectricity in high T c superconductors
July, 0 : IJMPB S000 page International Journal of Modern Physics B Vol., No. 0 (0) 00 ( pages) c World Scientific Publishing Company DOI: 0./S000 Dipolar clusters and ferroelectricity in high T c superconductors
More informationHow does a polymer LED OPERATE?
How does a polymer LED OPERATE? Now that we have covered many basic issues we can try and put together a few concepts as they appear in a working device. We start with an LED:. Charge injection a. Hole
More informationSi - Based Tunnel Diode Operation and Forecasted Performance
Si - Based Tunnel Diode Operation and Forecasted Performance Roger Lake Raytheon Systems Dallas, TX Si / Si x Ge -x Interband Tunnel Diodes The main tunneling process is LA and TO phonon assisted tunneling
More informationCharge and Energy Transfer Dynamits in Molecular Systems
Volkhard May, Oliver Kühn Charge and Energy Transfer Dynamits in Molecular Systems Second, Revised and Enlarged Edition WILEY- VCH WILEY-VCH Verlag GmbH & Co. KGaA Contents 1 Introduction 19 2 Electronic
More informationdoi: /PhysRevLett
doi: 10.1103/PhysRevLett.77.494 Luminescence Hole Burning and Quantum Size Effect of Charged Excitons in CuCl Quantum Dots Tadashi Kawazoe and Yasuaki Masumoto Institute of Physics and Center for TARA
More informationCurrent mechanisms Exam January 27, 2012
Current mechanisms Exam January 27, 2012 There are four mechanisms that typically cause currents to flow: thermionic emission, diffusion, drift, and tunneling. Explain briefly which kind of current mechanisms
More informationOptical and transport properties of small polarons from Dynamical Mean-Field Theory
Optical and transport properties of small polarons from Dynamical Mean-Field Theory S. Fratini, S. Ciuchi Outline: Historical overview DMFT for Holstein polaron Optical conductivity Transport Polarons:
More informationSupporting Information
Supporting Information Atomistic Approach to Simulate Processes Relevant for the Efficiencies of Organic Solar Cells as a Function of Molecular Properties II. Kinetic Aspects Charlo e Brückner, Frank Würthner,
More informationNumerical model of planar heterojunction organic solar cells
Article Materials Science July 2011 Vol.56 No.19: 2050 2054 doi: 10.1007/s11434-011-4376-4 SPECIAL TOPICS: Numerical model of planar heterojunction organic solar cells MA ChaoZhu 1 PENG YingQuan 12* WANG
More informationInfluences of alkyl side-chain length on the carrier mobility in organic
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry C. This journal is The Royal Society of Chemistry 2016 Supporting Information Influences of alkyl side-chain length on the carrier
More informationFirst principles simulations of materials and processes in photocatalysis
First principles simulations of materials and processes in photocatalysis Work with: Annabella Selloni Department of Chemistry, Princeton University Ulrich Aschauer, Jia Chen, Hongzhi Cheng, Cristiana
More informationEnergy band of manipulated atomic structures on an insulator substrate
Energy band of manipulated atomic structures on an insulator substrate Toshishige Yamada and Yoshihisa Yamamoto ERATO Quantum Fluctuation Project, Edward L. Ginzton Laboratory, Stanford University, Stanford,
More informationarxiv:cond-mat/ v1 [cond-mat.mtrl-sci] 17 Feb 2003
Is Correlation Important in Explaining the Charge Transport in Disordered Molecular Solids? arxiv:cond-mat/0302323v1 [cond-mat.mtrl-sci] 17 Feb 2003 Ajit Kumar Mahapatro and Subhasis Ghosh School of Physical
More informationSite- and orbital-dependent charge donation and spin manipulation in electron-doped metal phthalocyanines
Site- and orbital-dependent charge donation and spin manipulation in electron-doped metal phthalocyanines Cornelius Krull 1, Roberto Robles 2, Aitor Mugarza 1, Pietro Gambardella 1,3 1 Catalan Institute
More informationElectronic Structure and Geometry Relaxation at Excited State
Electronic Structure and Geometry Relaxation at Excited State Speaker: Chun I Wang ( 王俊壹 ) 2016.07.14 Structure-Performance Relationship Processing schemes Solvent quality Thermal annealing Blend composition
More informationMOLECULAR STRUCTURE. Molecular Structure - B. Molecular Structure - B. Molecular Structure - B. Molecular Structure - B. Molecular Structure - B
MOLECULAR STRUCTURE Molecular Orbital all orbitals of the appropriate symmetry contribute to a molecular orbital. Bundet Boekfa Chem Div, Faculty Lib Arts & Sci Kasetsart University Kamphaeng Saen Campus
More informationLow Temperature Microwave Annealing of S/D
16th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP28 Low Temperature Microwave Annealing of S/D Bo Lojek Atmel Corporation 115 E. Cheyenne Mtn. Blvd. Colorado Springs,
More informationLecture 7: Extrinsic semiconductors - Fermi level
Lecture 7: Extrinsic semiconductors - Fermi level Contents 1 Dopant materials 1 2 E F in extrinsic semiconductors 5 3 Temperature dependence of carrier concentration 6 3.1 Low temperature regime (T < T
More informationSupplementary Figure 2 Photoluminescence in 1L- (black line) and 7L-MoS 2 (red line) of the Figure 1B with illuminated wavelength of 543 nm.
PL (normalized) Intensity (arb. u.) 1 1 8 7L-MoS 1L-MoS 6 4 37 38 39 4 41 4 Raman shift (cm -1 ) Supplementary Figure 1 Raman spectra of the Figure 1B at the 1L-MoS area (black line) and 7L-MoS area (red
More informationSemiconductor Physical Electronics
Semiconductor Physical Electronics Sheng S. Li Department of Electrical Engineering University of Florida Gainesville, Florida Plenum Press New York and London Contents CHAPTER 1. Classification of Solids
More informationSo why is sodium a metal? Tungsten Half-filled 5d band & half-filled 6s band. Insulators. Interaction of metals with light?
Bonding in Solids: Metals, Insulators, & CHEM 107 T. Hughbanks Delocalized bonding in Solids Think of a pure solid as a single, very large molecule. Use our bonding pictures to try to understand properties.
More informationAtomic and molecular interaction forces in biology
Atomic and molecular interaction forces in biology 1 Outline Types of interactions relevant to biology Van der Waals interactions H-bond interactions Some properties of water Hydrophobic effect 2 Types
More informationElectron Phonon Interactions in Polyacene Organic Transistors
phys. stat. sol. (b) 230, No. 2, 309 313 (2002) Electron honon Interactions in olyacene Organic Transistors J. Sinova 1 Þ, A. S. Núñez, J. Schliemann, and A. H. MacDonald Department of hysics, University
More informationT=171 K, D=4. 4, (b) T=171 K, D=4. 6, and (c)
PHYSCAL REVEW 8 VOLUME 51, NUMBER 7 15 FEBRUARY 1995- Metal-insulator transition in semiconductor alloys probed by persistent photoconducfivity M. Smith, J. Y. Lin, and H. X. Jiang Department of Physics,
More informationMany-body correlations in a Cu-phthalocyanine STM single molecule junction
Many-body correlations in a Cu-phthalocyanine STM single molecule junction Andrea Donarini Institute of Theoretical Physics, University of Regensburg (Germany) Organic ligand Metal center Non-equilibrium
More informationFoster, Adam; Lopez Gejo, F.; Shluger, A. L.; Nieminen, Risto Vacancy and interstitial defects in hafnia
Powered by TCPDF (www.tcpdf.org) This is an electronic reprint of the original article. This reprint may differ from the original in pagination and typographic detail. Foster, Adam; Lopez Gejo, F.; Shluger,
More informationSession 5: Solid State Physics. Charge Mobility Drift Diffusion Recombination-Generation
Session 5: Solid State Physics Charge Mobility Drift Diffusion Recombination-Generation 1 Outline A B C D E F G H I J 2 Mobile Charge Carriers in Semiconductors Three primary types of carrier action occur
More informationTHE STUDY OF CHARGE CARRIER TRANSPORT ON THE CALAMITIC LIQUID CRYSTALS 5, 5 -DI-(ALKYL-PYRIDIN-YL) - 2 BITHIOPHENES. Abstract
Presented on Gordon Research Conference on Liquid Crystals, June 14-19, 2009, Colby-Sawyer College, New London, NH, USA THE STUDY OF CHARGE CARRIER TRANSPORT ON THE CALAMITIC LIQUID CRYSTALS 5, 5 -DI-(ALKYL-PYRIDIN-YL)
More informationEnergy position of the transport path in disordered organic semiconductors
J. Phys.: Condens. Matter 6 (014) 55801 (10pp) Journal of Physics: Condensed Matter doi:10.1088/095-8984/6/5/55801 Energy position of the transport path in disordered organic semiconductors J O Oelerich
More informationLecture 16, February 25, 2015 Metallic bonding
Lecture 16, February 25, 2015 Metallic bonding Elements of Quantum Chemistry with Applications to Chemical Bonding and Properties of Molecules and Solids Course number: Ch125a; Room 115 BI Hours: 11-11:50am
More informationMarcus Theory for Electron Transfer a short introduction
Marcus Theory for Electron Transfer a short introduction Minoia Andrea MPIP - Journal Club -Mainz - January 29, 2008 1 Contents 1 Intro 1 2 History and Concepts 2 2.1 Frank-Condon principle applied to
More informationElectronic properties of organic semiconductors and their interfaces. Devices of "Organic & Hybrid Electronics"
Electronicpropertiesoforganicsemiconductors andtheirinterfaces NorbertKoch elmholtzzentrumberlin fürmaterialienundenergiegmb InstitutfürPhysik&IRIAdlershof umboldtuniversitätzuberlin Devicesof"Organic&ybridElectronics"
More informationMetal Semiconductor Contacts
Metal Semiconductor Contacts The investigation of rectification in metal-semiconductor contacts was first described by Braun [33-35], who discovered in 1874 the asymmetric nature of electrical conduction
More informationThermionic power generation at high temperatures using SiGe/ Si superlattices
JOURNAL OF APPLIED PHYSICS 101, 053719 2007 Thermionic power generation at high temperatures using SiGe/ Si superlattices Daryoosh Vashaee a and Ali Shakouri Jack Baskin School of Engineering, University
More informationFree and Trapped Injected Carriers in C 60 Crystals
Free and Trapped Injected Carriers in Crystals V.Y. Butko* and A. P. Ramirez Los Alamos National Laboratory, Los Alamos, New Mexico, 87545 C. Kloc Bell Laboratories, Lucent Technologies, 600 Mountain Avenue,
More informationSemiconductor Physics fall 2012 problems
Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each
More informationMESOSCOPIC MODELLING OF BIPOLAR CHARGE EVOLUTION IN CN-PPV LEDs
Abstract MESOSCOPIC MODELLING OF BIPOLAR CHARGE EVOLUTION IN CN-PPV LEDs Marta M. D. Ramos, Helena M. G. Correia, R. Mendes Ribeiro Departamento de Física, Universidade do Minho, Campus de Gualtar, 4710-057
More informationDoping properties of C, Si, and Ge impurities in GaN and AlN
PHYSICAL REVIEW B VOLUME 56, NUMBER 15 15 OCTOBER 1997-I Doping properties of C, Si, and Ge impurities in GaN and AlN P. Bogusławski Department of Physics, North Carolina State University, Raleigh, North
More informationLuminescence. Photoluminescence (PL) is luminescence that results from optically exciting a sample.
Luminescence Topics Radiative transitions between electronic states Absorption and Light emission (spontaneous, stimulated) Excitons (singlets and triplets) Franck-Condon shift(stokes shift) and vibrational
More informationsingle-electron electron tunneling (SET)
single-electron electron tunneling (SET) classical dots (SET islands): level spacing is NOT important; only the charging energy (=classical effect, many electrons on the island) quantum dots: : level spacing
More informationGeneral Physical Chemistry II
General Physical Chemistry II Lecture 13 Aleksey Kocherzhenko October 16, 2014" Last time " The Hückel method" Ø Used to study π systems of conjugated molecules" Ø π orbitals are treated separately from
More informationSPECTRAL AND THERMODYNAMIC PROPERTIES OF CHOLESTERYL MYRISTATE IN THE REGION OF PHASE TRANSITION
SPECTRAL AND THERMODYNAMIC PROPERTIES OF CHOLESTERYL MYRISTATE IN THE REGION OF PHASE TRANSITION V. DANCHUK 1, A. KRAVCHUK 1, G. PUCHKOVSKA 2, A. YAKUBOV 3 1 National Transport University, 1 Suvorova str.,
More informationDiffusion-enhanced hole transport in thin polymer light-emitting diodes Craciun, N. I.; Brondijk, J. J.; Blom, P. W. M.
University of Groningen Diffusion-enhanced hole transport in thin polymer light-emitting diodes Craciun, N. I.; Brondijk, J. J.; Blom, P. W. M. Published in: Physical Review. B: Condensed Matter and Materials
More informationEE143 Fall 2016 Microfabrication Technologies. Evolution of Devices
EE143 Fall 2016 Microfabrication Technologies Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1-1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) 1-2 1 Why
More information2 Description of Charge Transport in Amorphous Semiconductors
2 Description of Charge Transport in Amorphous Semiconductors S.D. Baranovski and O. Rubel Faculty of Physics and Material Sciences Center, Philipps University Marburg, Germany 2.1 Introduction 49 2.2
More informationSupplementary Materials
Supplementary Materials Sample characterization The presence of Si-QDs is established by Transmission Electron Microscopy (TEM), by which the average QD diameter of d QD 2.2 ± 0.5 nm has been determined
More information