Technical Documents LM35. +V S (4 V to 20 V)
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1 1 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community 1 Features 1 Calibrated Directly in Celsius (Centigrade) Linear 10-mV/ Scale Factor 0.5 Ensured Accuracy (at 25) Rated for Full 55 to 150 Range Suitable for Remote Applications Low-Cost Due to Wafer-Level Trimming Operates from 4 V to 30 V Less than 60-μA Current Drain Low Self-Heating, 0.08 in Still Air Non-Linearity Only ±¼ Typical Low-Impedance Output, 0.1 Ω for 1-mA Load 2 Applications Power Supplies Battery Management HVAC Appliances SNIS159G AUGUST 1999 REVISED AUGUST 2016 Precision Centigrade Temperature Sensors 3 Description The series are precision integrated-circuit temperature devices with an output voltage linearlyproportional to the Centigrade temperature. The device has an advantage over linear temperature sensors calibrated in Kelvin, as the user is not required to subtract a large constant voltage from the output to obtain convenient Centigrade scaling. The device does not require any external calibration or trimming to provide typical accuracies of ±¼ at room temperature and ±¾ over a full 55 to 150 temperature range. Lower cost is assured by trimming and calibration at the wafer level. The low-output impedance, linear output, and precise inherent calibration of the device makes interfacing to readout or control circuitry especially easy. The device is used with single power supplies, or with plus and minus supplies. As the device draws only 60 μa from the supply, it has very low self-heating of less than 0.1 in still air. The device is rated to operate over a 55 to 150 temperature range, while the C device is rated for a 40 to 110 range ( 10 with improved accuracy). The -series devices are available packaged in hermetic TO transistor packages, while the C, CA, and D devices are available in the plastic TO-92 transistor package. The D device is available in an 8-lead surface-mount small-outline package and a plastic TO-220 package. Device Information (1) PART NUMBER PACKAGE BODY SIZE (NOM) TO-CAN (3) TO-92 (3) SOIC (8) TO-220 (3) mm mm 4.30 mm 4.30 mm 4.90 mm 3.91 mm mm mm (1) For all available packages, see the orderable addendum at the end of the datasheet. Basic Centigrade Temperature Sensor (2 to 150) V S (4 V to 20 V) Full-Range Centigrade Temperature Sensor V S OUTPUT 0 mv 10.0 mv/ V OUT R1 tv S Choose R 1 = V S / 50 µa V OUT = 1500 mv at 150 V OUT = 250 mv at 25 V OUT = 550 mv at 55 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.
2 SNIS159G AUGUST 1999 REVISED AUGUST Table of Contents 1 Features Applications Description Revision History Pin Configuration and Functions Specifications Absolute Maximum Ratings ESD Ratings Recommended Operating Conditions Thermal Information Electrical Characteristics: A, CA Limits Electrical Characteristics: A, CA Electrical Characteristics:, C, D Limits Electrical Characteristics:, C, D Typical Characteristics Detailed Description Overview Functional Block Diagram Feature Description Device Functional Modes Application and Implementation Application Information Typical Application System Examples Power Supply Recommendations Layout Layout Guidelines Layout Example Device and Documentation Support Receiving Notification of Documentation Updates Community Resources Trademarks Electrostatic Discharge Caution Glossary Mechanical, Packaging, and Orderable Information Revision History Changes from Revision F (January 2016) to Revision G Page Equation 1, changed From: 10 mv/ F To: 10mv/ Power Supply Recommendations, changed From: "4-V to 5.5-V power supply" To: "4-V to 30-V power supply: Changes from Revision E (January 2015) to Revision F Page Changed NDV Package (TO-CAN) pinout from Top View to Bottom View... 3 Changes from Revision D (October 2013) to Revision E Page Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section... 1 Changes from Revision C (July 2013) to Revision D Page Changed W to Ω... 1 Changed W to Ω in Abs Max tablenote Product Folder Links:
3 SNIS159G AUGUST 1999 REVISED AUGUST Pin Configuration and Functions NDV Package 3-Pin TO-CAN (Bottom View) NEB Package 3-Pin TO-220 (Top View) V S V OUT GND t Case is connected to negative pin (GND) LM 35DT D Package 8-PIN SOIC (Top View) V OUT GND = No connection V S V S V OUT GND Tab is connected to the negative pin (GND). NOTE: The DT pinout is different than the discontinued DP LP Package 3-Pin TO-92 (Bottom View) V S V OUT GND PIN NAME TO46 TO92 TO220 SO8 Pin Functions TYPE DESCRIPTION V OUT 1 O Temperature Sensor Analog Output 2 3 GND 4 GROUND No Connection Device ground pin, connect to power supply negative terminal No Connection V S 8 POWER Positive power supply pin 3 Product Folder Links:
4 over operating free-air temperature range (unless otherwise noted) (1)(2) MIN MAX UNIT SNIS159G AUGUST 1999 REVISED AUGUST Specifications 6.1 Absolute Maximum Ratings Supply voltage V Output voltage 1 6 V Output current 10 ma Maximum Junction Temperature, T J max 150 TO-CAN, TO-92 Package Storage Temperature, T stg TO-220, SOIC Package (1) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. (2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not apply when operating the device beyond its rated operating conditions. 6.2 ESD Ratings (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. VALUE V (ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2500 V 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) Specified operating temperature: T MIN to T MAX UNIT MIN MAX UNIT, A C, CA D Supply Voltage (V S ) 4 30 V 6.4 Thermal Information THERMAL METRIC (1)(2) NDV LP D NEB 3 PINS 8 PINS 3 PINS R θja Junction-to-ambient thermal resistance R θjc(top) Junction-to-case (top) thermal resistance 24 UNIT /W (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. (2) For additional thermal resistance information, see Typical Application. 4 Product Folder Links:
5 SNIS159G AUGUST 1999 REVISED AUGUST Electrical Characteristics: A, CA Limits Unless otherwise noted, these specifications apply: 55 T J 150 for the and A; 40 T J 110 for the C and CA; and 0 T J 100 for the D. V S = 5 Vdc and I LOAD = 50 μa, in the circuit of Full-Range Centigrade Temperature Sensor. These specifications also apply from 2 to T MAX in the circuit of Figure 14. PARAMETER Accuracy (3) TEST CONDITIONS Nonlinearity (4) T MIN T A T MAX, 40 T J 125 Sensor gain (average slope) Load regulation (5) 0 I L 1 ma TYP A TESTED LIMIT (1) CA DESIGN TYP TESTED LIMIT (2) LIMIT (1) T A = 25 ±0.2 ±0.5 ±0.2 ±0.5 DESIGN LIMIT (2) T A = 10 ±0.3 ±0.3 ±1 T A = T MAX ±0.4 ±1 ±0.4 ±1 T A = T MIN ±0.4 ±1 ±0.4 ±1.5 (1) Tested Limits are ensured and 100% tested in production. (2) Design Limits are ensured (but not 100% production tested) over the indicated temperature and supply voltage ranges. These limits are not used to calculate outgoing quality levels. (3) Accuracy is defined as the error between the output voltage and 10 mv/ times the case temperature of the device, at specified conditions of voltage, current, and temperature (expressed in ). (4) Non-linearity is defined as the deviation of the output-voltage-versus-temperature curve from the best-fit straight line, over the rated temperature range of the device. (5) Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating effects can be computed by multiplying the internal dissipation by the thermal resistance. (6) Quiescent current is defined in the circuit of Figure 14. UNIT ±0.18 ±0.35 ±0.15 ±0.3 T MIN T A T MAX T J T A = 25 ±0.4 ±1 ±0.4 ±1 T MIN T A T MAX, 40 T J 125 ±0.5 ±3 ±0.5 ±3 T A = 25 ±0.01 ±0.05 ±0.01 ±0.05 Line regulation (5) 4 V V S 30 V, ±0.02 ±0.1 ±0.02 ± T J 125 Quiescent current (6) V S = 5 V, V S = 5 V, 40 T J V S = 30 V, V S = 30 V, 40 T J V V S 30 V, Change of quiescent current (5) 4 V V S 30 V, T J 125 Temperature coefficient of quiescent current Minimum temperature for rate accuracy mv/ mv/ma 40 T J µa/ In circuit of Figure 14, I L = Long term stability T J = T MAX, for 1000 hours ±0.08 ±0.08 mv/v µa µa Product Folder Links: 5
6 SNIS159G AUGUST 1999 REVISED AUGUST Electrical Characteristics: A, CA Unless otherwise noted, these specifications apply: 55 T J 150 for the and A; 40 T J 110 for the C and CA; and 0 T J 100 for the D. V S = 5 Vdc and I LOAD = 50 μa, in the circuit of Full-Range Centigrade Temperature Sensor. These specifications also apply from 2 to T MAX in the circuit of Figure 14. PARAMETER Accuracy (1) T A = 25 T A = 10 TEST CONDITIONS A CA MIN TYP MAX TYP TYP MAX ±0.2 ±0.2 ±0.5 ±0.5 ±0.3 ±0.3 ±1 T A = T MAX ±0.4 ±0.4 ±1 ±1 ±0.4 ±0.4 T A = T MIN ±1 Nonlinearity (4) T MIN T A T MAX, 40 T J 125 Sensor gain (average slope) Load regulation (5) 0 I L 1 ma Line regulation (5) ±1.5 ±0.18 ±0.15 ±0.35 ± T MIN T A T MAX T J 125 T A = 25 T MIN T A T MAX, 40 T J 125 T A = 25 4 V V S 30 V, 40 T J ±0.4 ±0.4 ±1 ±1 ±0.5 ±0.5 ±3 ±3 ±0.01 ±0.01 ±0.05 ±0.05 ±0.02 ±0.02 ±0.1 ±0.1 UNIT mv/ mv/ma mv/v (1) Accuracy is defined as the error between the output voltage and 10 mv/ times the case temperature of the device, at specified conditions of voltage, current, and temperature (expressed in ). (2) Tested Limits are ensured and 100% tested in production. (3) Design Limits are ensured (but not 100% production tested) over the indicated temperature and supply voltage ranges. These limits are not used to calculate outgoing quality levels. (4) Non-linearity is defined as the deviation of the output-voltage-versus-temperature curve from the best-fit straight line, over the rated temperature range of the device. (5) Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating effects can be computed by multiplying the internal dissipation by the thermal resistance. 6 Product Folder Links:
7 SNIS159G AUGUST 1999 REVISED AUGUST 2016 Electrical Characteristics: A, CA (continued) Unless otherwise noted, these specifications apply: 55 T J 150 for the and A; 40 T J 110 for the C and CA; and 0 T J 100 for the D. V S = 5 Vdc and I LOAD = 50 μa, in the circuit of Full-Range Centigrade Temperature Sensor. These specifications also apply from 2 to T MAX in the circuit of Figure 14. PARAMETER Quiescent current (6) Change of quiescent current (5) Temperature coefficient of quiescent current Minimum temperature for rate accuracy Long term stability V S = 5 V, 25 V S = 5 V, 40 T J 125 V S = 30 V, 25 V S = 30 V, 40 T J V V S 30 V, 25 4 V V S 30 V, 40 T J T J 125 TEST CONDITIONS In circuit of Figure 14, I L = 0 T J = T MAX, for 1000 hours (6) Quiescent current is defined in the circuit of Figure 14. A CA MIN TYP MAX TYP TYP MAX ±0.08 ±0.08 UNIT µa µa µa/ Product Folder Links: 7
8 SNIS159G AUGUST 1999 REVISED AUGUST Electrical Characteristics:, C, D Limits Unless otherwise noted, these specifications apply: 55 T J 150 for the and A; 40 T J 110 for the C and CA; and 0 T J 100 for the D. V S = 5 Vdc and I LOAD = 50 μa, in the circuit of Full-Range Centigrade Temperature Sensor. These specifications also apply from 2 to T MAX in the circuit of Figure 14. PARAMETER Accuracy,, C (3) TEST CONDITIONS TYP (1) Tested Limits are ensured and 100% tested in production. (2) Design Limits are ensured (but not 100% production tested) over the indicated temperature and supply voltage ranges. These limits are not used to calculate outgoing quality levels. (3) Accuracy is defined as the error between the output voltage and 10 mv/ times the case temperature of the device, at specified conditions of voltage, current, and temperature (expressed in ). (4) Non-linearity is defined as the deviation of the output-voltage-versus-temperature curve from the best-fit straight line, over the rated temperature range of the device. (5) Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating effects can be computed by multiplying the internal dissipation by the thermal resistance. (6) Quiescent current is defined in the circuit of Figure 14. TESTED LIMIT (1) C, D DESIGN TYP TESTED LIMIT (2) LIMIT (1) T A = 25 ±0.4 ±1 ±0.4 ±1 DESIGN LIMIT (2) T A = 10 ±0.5 ±0.5 ±1.5 T A = T MAX ±0.8 ±1.5 ±0.8 ±1.5 T A = T MIN ±0.8 ±1.5 ±0.8 ±2 T A = 25 ±0.6 ±1.5 Accuracy, D (3) T A = T MAX ±0.9 ±2 Nonlinearity (4) T MIN T A T MAX, 40 T J 125 Sensor gain (average slope) Load regulation (5) 0 I L 1 ma T A = T MIN ±0.9 ±2 T MIN T A T MAX, 40 T J 125 UNIT ±0.3 ±0.5 ±0.2 ± T A = 25 ±0.4 ±2 ±0.4 ±2 T MIN T A T MAX, 40 T J 125 ±0.5 ±5 ±0.5 ±5 T A = 25 ±0.01 ±0.1 ±0.01 ±0.1 Line regulation (5) 4 V V S 30 V, ±0.02 ±0.2 ±0.02 ± T J 125 Quiescent current (6) V S = 5 V, V S = 5 V, 40 T J V S = 30 V, V S = 30 V, 40 T J V V S 30 V, Change of quiescent current (5) 4 V V S 30 V, T J 125 Temperature coefficient of quiescent current Minimum temperature for rate accuracy mv/ mv/ma 40 T J µa/ In circuit of Figure 14, I L = Long term stability T J = T MAX, for 1000 hours ±0.08 ±0.08 mv/v µa µa 8 Product Folder Links:
9 SNIS159G AUGUST 1999 REVISED AUGUST Electrical Characteristics:, C, D Unless otherwise noted, these specifications apply: 55 T J 150 for the and A; 40 T J 110 for the C and CA; and 0 T J 100 for the D. V S = 5 Vdc and I LOAD = 50 μa, in the circuit of Full-Range Centigrade Temperature Sensor. These specifications also apply from 2 to T MAX in the circuit of Figure 14. PARAMETER Accuracy,, C (1) Accuracy, D (1) T A = 25 T A = 10 TEST CONDITIONS C, D MIN TYP MAX MIN TYP MAX ±0.4 ±0.4 ±1 ±1 ±0.5 ±0.5 ±1.5 ±0.8 ±0.8 T A = T MAX ±1.5 ±1.5 ±0.8 ±0.8 T A = T MIN T A = 25 ±1.5 ±2 ±0.6 ±1.5 ±0.9 T A = T MAX ±2 ±0.9 T A = T MIN Nonlinearity (4) T MIN T A T MAX, 40 T J 125 Sensor gain (average slope) Load regulation (5) 0 I L 1 ma T MIN T A T MAX, 40 T J 125 T A = 25 T MIN T A T MAX, 40 T J 125 ±2 ±0.3 ±0.2 ±0.5 ± ±0.4 ±0.4 ±2 ±2 ±0.5 ±0.5 ±5 ±5 UNIT mv/ mv/ma (1) Accuracy is defined as the error between the output voltage and 10 mv/ times the case temperature of the device, at specified conditions of voltage, current, and temperature (expressed in ). (2) Tested Limits are ensured and 100% tested in production. (3) Design Limits are ensured (but not 100% production tested) over the indicated temperature and supply voltage ranges. These limits are not used to calculate outgoing quality levels. (4) Non-linearity is defined as the deviation of the output-voltage-versus-temperature curve from the best-fit straight line, over the rated temperature range of the device. (5) Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating effects can be computed by multiplying the internal dissipation by the thermal resistance. Product Folder Links: 9
10 SNIS159G AUGUST 1999 REVISED AUGUST Electrical Characteristics:, C, D (continued) Unless otherwise noted, these specifications apply: 55 T J 150 for the and A; 40 T J 110 for the C and CA; and 0 T J 100 for the D. V S = 5 Vdc and I LOAD = 50 μa, in the circuit of Full-Range Centigrade Temperature Sensor. These specifications also apply from 2 to T MAX in the circuit of Figure 14. PARAMETER Line regulation (5) Quiescent current (6) Change of quiescent current (5) Temperature coefficient of quiescent current Minimum temperature for rate accuracy Long term stability T A = 25 4 V V S 30 V, 40 T J 125 V S = 5 V, 25 V S = 5 V, 40 T J 125 V S = 30 V, 25 V S = 30 V, 40 T J V V S 30 V, 25 4 V V S 30 V, 40 T J T J 125 TEST CONDITIONS In circuit of Figure 14, I L = 0 T J = T MAX, for 1000 hours (6) Quiescent current is defined in the circuit of Figure 14. C, D MIN TYP MAX MIN TYP MAX ±0.1 ±0.01 ±0.01 ±0.1 ±0.02 ±0.02 ±0.2 ± ±0.08 ±0.08 UNIT mv/v µa µa µa/ 10 Product Folder Links:
11 SNIS159G AUGUST 1999 REVISED AUGUST Typical Characteristics THERMAL RESISTANCE (ƒc/w) T T AIR VELOCITY (FPM) C001 Figure 1. Thermal Resistance Junction To Air 120 TIME CONSTANT (SEC) T0-46 T AIR VELOCITY (FPM) Figure 2. Thermal Time Constant C002 PERCENT OF FINAL VALUE (%) PERCENT OF FINAL VALUE (%) T0-46 T0-92 SUPPLY VOLTAGE (V) ± TIME (MINUTES) Figure 3. Thermal Response In Still Air TYPICAL I OUT = 2.0 ma TYPICAL I OUT = 0 A or 50 A 2.4 ±75 ± TEMPERATURE (ƒc) TYPICAL I OUT = 1.0 ma Figure 5. Minimum Supply Voltage vs Temperature C003 C005 QUIESCENT CURRENT (A) ± TIME (SEC) 0 ±75 ± TEMPERATURE (ƒc) C004 Figure 4. Thermal Response In Stirred Oil Bath Figure 6. Quiescent Current vs Temperature (in Circuit of Figure 14) C Product Folder Links:
12 SNIS159G AUGUST 1999 REVISED AUGUST Typical Characteristics (continued) QUIESCENT CURRENT (A) TEMPERATURE ERROR (ƒc) ±75 ± ±0.5 ±1.0 ±1.5 ±2.0 TYPICAL TEMPERATURE (ƒc) Figure 7. Quiescent Current vs Temperature (in Circuit of Full-Range Centigrade Temperature Sensor) ±2.5 ±75 ± TEMPERATURE (ƒc) D C CA CA C C007 C009 Figure 9. Accuracy vs Temperature (Ensured) TEMPERATURE ERROR (ƒc) Noise (nv/ Hz) ±0.5 ±1.0 ±1.5 ±2.0 ±75 ± TYPICAL TEMPERATURE (ƒc) k 10k 100k FREQUENCY (Hz) A A C008 Figure 8. Accuracy vs Temperature (Ensured) Figure 10. Noise Voltage C010 6 V OUT (V) V IN (V) TIME (SEC) Figure 11. Start-Up Response C Product Folder Links:
13 SNIS159G AUGUST 1999 REVISED AUGUST Detailed Description 7.1 Overview The -series devices are precision integrated-circuit temperature sensors, with an output voltage linearly proportional to the Centigrade temperature. The device has an advantage over linear temperature sensors calibrated in Kelvin, as the user is not required to subtract a large constant voltage from the output to obtain convenient Centigrade scaling. The device does not require any external calibration or trimming to provide typical accuracies of ± ¼ at room temperature and ± ¾ over a full 55 to 150 temperature range. Lower cost is assured by trimming and calibration at the wafer level. The low output impedance, linear output, and precise inherent calibration of the device makes interfacing to readout or control circuitry especially easy. The device is used with single power supplies, or with plus and minus supplies. As the device draws only 60 μa from the supply, it has very low self-heating of less than 0.1 in still air. The device is rated to operate over a 55 to 150 temperature range, while the C device is rated for a 40 to 110 range ( 10 with improved accuracy). The temperature-sensing element is comprised of a delta-v BE architecture. The temperature-sensing element is then buffered by an amplifier and provided to the VOUT pin. The amplifier has a simple class A output stage with typical 0.5-Ω output impedance as shown in the Functional Block Diagram. Therefore the can only source current and it's sinking capability is limited to 1 μa. 7.2 Functional Block Diagram A V PTAT V S nr1 Q1 10E V 0 Q2 E A2 V OUT = 10 mv/.125 R2 nr1 8.8 mv/ i R2 7.3 Feature Description Transfer Function The accuracy specifications of the are given with respect to a simple linear transfer function: V OUT = 10 mv/ T where V OUT is the output voltage T is the temperature in (1) 7.4 Device Functional Modes The only functional mode of the is that it has an analog output directly proportional to temperature. 13 Product Folder Links:
14 SNIS159G AUGUST 1999 REVISED AUGUST Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The features of the make it suitable for many general temperature sensing applications. Multiple package options expand on it's flexibility Capacitive Drive Capability Like most micropower circuits, the device has a limited ability to drive heavy capacitive loads. Alone, the device is able to drive 50 pf without special precautions. If heavier loads are anticipated, isolating or decoupling the load with a resistor is easy (see Figure 12). The tolerance of capacitance can be improved with a series R-C damper from output to ground (see Figure 13). When the device is applied with a 200-Ω load resistor as shown in Figure 16, Figure 17, or Figure 19, the device is relatively immune to wiring capacitance because the capacitance forms a bypass from ground to input and not on the output. However, as with any linear circuit connected to wires in a hostile environment, performance is affected adversely by intense electromagnetic sources (such as relays, radio transmitters, motors with arcing brushes, and SCR transients), because the wiring acts as a receiving antenna and the internal junctions act as rectifiers. For best results in such cases, a bypass capacitor from V IN to ground and a series R-C damper, such as 75 Ω in series with 0.2 or 1 μf from output to ground, are often useful. Examples are shown in Figure 13, Figure 24, and Figure 25. v OUT HEAVY CAPACITIVE LOAD, WIRING, ETC. 2 k TO A HIGH-IMPEDANCE LOAD Figure 12. with Decoupling from Capacitive Load 0.01 PF BYPASS OPTONAL HEAVY CAPACITIVE LOAD, WIRING, ETC. OUT v 75 1 PF TO A HIGH-IMPEDANCE LOAD Figure 13. with R-C Damper 14 Product Folder Links:
15 V S (4 V to 20 V) SNIS159G AUGUST 1999 REVISED AUGUST Typical Application Basic Centigrade Temperature Sensor OUTPUT 0 mv 10.0 mv/ Design Requirements Figure 14. Basic Centigrade Temperature Sensor (2 to 150 ) Table 1. Design Parameters PARAMETER Accuracy at 25 Accuracy from 55 to 150 Temperature Slope VALUE ±0.5 ±1 10 mv/ Detailed Design Procedure Because the device is a simple temperature sensor that provides an analog output, design requirements related to layout are more important than electrical requirements. For a detailed description, refer to the Layout Application Curve TEMPERATURE ERROR (ƒc) ±0.5 ±1.0 ±1.5 TYPICAL ±2.0 ±75 ± TEMPERATURE (ƒc) A A Figure 15. Accuracy vs Temperature (Ensured) C008 Product Folder Links: 15
16 SNIS159G AUGUST 1999 REVISED AUGUST System Examples HEAT FINS v 6.8 k 5% OUT 5 V v V OUT = 10 mv/ (T AMBIENT = 1 ) FROM 2 TO 40 TWISTED PAIR HEAT FINS v 6.8 k 5% OR 10K RHEOSTAT FOR GAIN ADJUST OUT TWISTED PAIR 200 V OUT = 10 mv/ (T AMBIENT = 1 ) FROM 2 TO V Figure 16. Two-Wire Remote Temperature Sensor (Grounded Sensor) Figure 17. Two-Wire Remote Temperature Sensor (Output Referred to Ground) V S 5 V v V OUT 0.01 PF BYPASS OPTIONAL 2 k OUT k TWISTED PAIR V OUT = 10 mv/ (T AMBIENT = 10 ) FROM t 5 TO N k 10% Figure 18. Temperature Sensor, Single Supply ( 55 to 150) Figure 19. Two-Wire Remote Temperature Sensor (Output Referred to Ground) 16 Product Folder Links:
17 SNIS159G AUGUST 1999 REVISED AUGUST 2016 System Examples (continued) 4.7 k 5 V TO 30 V V S (6 V to 20 V) 2N2907 OUT OUT IN LM ko % v OFFSET ADJUST ADJ 10 ko V OUT = 1 mv/ F 26.4 ko LM ko 1 MO Figure To-20 ma Current Source (0 to 100) 5 V Figure 21. Fahrenheit Thermometer 9 V 1 k 100 A, 60 mv FULL- SCALE LM k Figure 22. Centigrade Thermometer (Analog Meter) Figure 23. Fahrenheit Thermometer, Expanded Scale Thermometer (50 F to 80 F, for Example Shown) 17 Product Folder Links:
18 SNIS159G AUGUST 1999 REVISED AUGUST System Examples (continued) GND OUT 1 PF k FB 10 k LM k IN REF ADC V F 5 V SERIAL DATA OUTPUT CLOCK ENABLE GND Figure 24. Temperature to Digital Converter (Serial Output) (128 Full Scale) GND OUT 1 PF k 1 k 2 k IN VREF 0.64 V ADC V 8 5 V PARALLEL DATA OUTPUT INTR CS RD WR GND Figure 25. Temperature to Digital Converter (Parallel TRI-STATE Outputs for Standard Data Bus to μp Interface) (128 Full Scale) HEAT FINS 7 V 1 PF 20 PF OUT VA 200* k* V VC LM k LM NC 1.2 k* 7 V 499* 1.5 k* RC 1 k * VB 10 1 k* RB 1 k 20 LEDs GND 100 k 0.01 PF k 1 PF k 8 5 LM k FULL SCALE ADJ 5 k 1 k 4N PF LOW TEMPCO fout RA 1 k *= or 2% film resistor Trim R B for V B = V Trim R C for V C = V Trim R A for V A = V 100 mv/ T ambient Example, V A = V at 22 Figure 26. Bar-Graph Temperature Display (Dot Mode) Figure 27. With Voltage-To-Frequency Converter and Isolated Output (2 to 150; 20 to 1500 Hz) 18 Product Folder Links:
19 SNIS159G AUGUST 1999 REVISED AUGUST Power Supply Recommendations The device has a very wide 4-V to 30-V power supply voltage range, which makes it ideal for many applications. In noisy environments, TI recommends adding a 0.1 μf from V to GND to bypass the power supply voltage. Larger capacitances maybe required and are dependent on the power-supply noise. 10 Layout 10.1 Layout Guidelines The is easily applied in the same way as other integrated-circuit temperature sensors. Glue or cement the device to a surface and the temperature should be within about 0.01 of the surface temperature. The 0.01 proximity presumes that the ambient air temperature is almost the same as the surface temperature. If the air temperature were much higher or lower than the surface temperature, the actual temperature of the die would be at an intermediate temperature between the surface temperature and the air temperature; this is especially true for the TO-92 plastic package. The copper leads in the TO-92 package are the principal thermal path to carry heat into the device, so its temperature might be closer to the air temperature than to the surface temperature. Ensure that the wiring leaving the device is held at the same temperature as the surface of interest to minimize the temperature problem. The easiest fix is to cover up these wires with a bead of epoxy. The epoxy bead will ensure that the leads and wires are all at the same temperature as the surface, and that the temperature of the die is not affected by the air temperature. The TO-46 metal package can also be soldered to a metal surface or pipe without damage. Of course, in that case the V terminal of the circuit will be grounded to that metal. Alternatively, mount the inside a sealedend metal tube, and then dip into a bath or screw into a threaded hole in a tank. As with any IC, the device and accompanying wiring and circuits must be kept insulated and dry, to avoid leakage and corrosion. This is especially true if the circuit may operate at cold temperatures where condensation can occur. Printed-circuit coatings and varnishes such as a conformal coating and epoxy paints or dips are often used to insure that moisture cannot corrode the device or its connections. These devices are sometimes soldered to a small light-weight heat fin to decrease the thermal time constant and speed up the response in slowly-moving air. On the other hand, a small thermal mass may be added to the sensor, to give the steadiest reading despite small deviations in the air temperature. Table 2. Temperature Rise of Due To Self-heating (Thermal Resistance, R θja ) TO, no heat sink TO (1), small heat fin TO-92, no heat sink TO-92 (2), small heat fin SOIC-8, no heat sink SOIC-8 (2), small heat fin (1) Wakefield type 201, or 1-in disc of 0.02-in sheet brass, soldered to case, or similar. (2) TO-92 and SOIC-8 packages glued and leads soldered to 1-in square of 1/16-in printed circuit board with 2-oz foil or similar. TO-220, no heat sink Still air 400/W 100/W 180/W 140/W 220/W 110/W 90/W Moving air 100/W 40/W 90/W 70/W 105/W 90/W 26/W Still oil 100/W 40/W 90/W 70/W Stirred oil 50/W 30/W 45/W 40/W (Clamped to metal, Infinite heat sink) (24/W) (55/W) Product Folder Links: 19
20 SNIS159G AUGUST 1999 REVISED AUGUST Layout Example VIA to ground plane VIA to power plane V OUT V S 0.01 µf GND Figure 28. Layout Example 20 Product Folder Links:
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