DISCRETE SEMICONDUCTORS DATA SHEET. BLF543 UHF power MOS transistor

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1 DISCRETE SEMICONDUCTORS DATA SHEET October 1992

2 FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability Designed for broadband operation. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. The devices are marked with a V GS indication intended for matched pair applications. PINNING - SOT171 PIN DESCRIPTION 1 source 2 source 3 gate 4 drain 5 source 6 source PIN CONFIGURATION page Top view MBA931-1 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. g MBB72 d s QUICK REFERENCE DATA RF performance at T h = 25 C in a common source class-b circuit. MODE OF OPERATION f (MHz) CW, class-b > 12 > 5 CW, class-b typ. 8 typ. 5 V DS (V) P L (W) G p (db) η D (%) October

3 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-source voltage 65 V ±V GS gate-source voltage 2 V I D DC drain current 2 A P tot total power dissipation up to T mb =25 C 25 W T stg storage temperature C T j junction temperature 2 C THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE R th j-mb thermal resistance from junction to mounting base 7 K/W R th mb-h thermal resistance from mounting base to heatsink.4 K/W 1 I D (A) MRA991 4 P tot (W) 3 (1) MDA488 1 (1) (2) 2 (2) V DS (V) T h ( C) (1) Current in this area may be limited by R DS(on). (2) T mb =25 C. Fig.2 DC SOAR. (1) Continuous operation. (2) Short-time operation during mismatch. Fig.3 Power/temperature derating curves. October

4 CHARACTERISTICS T j = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS drain-source breakdown voltage V GS = ; I D = 5 ma 65 V I DSS drain-source leakage current V GS = ; V DS = 28 V.5 ma I GSS gate-source leakage current ±V GS = 2 V; V DS = 1 µa V GS(th) gate-source threshold voltage I D = 2 ma; V DS = 1 V 1 4 V V GS(th) gate-source voltage difference of I D = 2 ma; V DS = 1 V 1 mv matched pairs g fs forward transconductance I D =.6 A; V DS = 1 V 3 45 ms R DS(on) drain-source on-state resistance I D =.6 A; V GS = 1 V Ω I DSX on-state drain current V GS = 15 V; V DS = 1 V 2.4 A C is input capacitance V GS = ; V DS = 28 V; f = 1 MHz 16 pf C os output capacitance V GS = ; V DS = 28 V; f = 1 MHz 12 pf C rs feedback capacitance V GS = ; V DS = 28 V; f = 1 MHz 3.2 pf 4 T.C. (mv/k) 2 MDA491 3 I D (A) MDA I D (A) V GS (V) V DS = 1 V. V DS = 1 V; T j = 25 C. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. Fig.5 Drain current as a function of gate-source voltage, typical values. October

5 4 R DSon (Ω) 3 MDA496 5 C (pf) 4 MDA C is 1 1 C os 5 1 T j ( C) 15 I D =.6 A; V GS = 1 V. 1 V GS = ; f = 1 MHz. 2 3 V DS (V) Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. 2 C rs (pf) 16 MDA V DS (V) V GS = ; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. October

6 APPLICATION INFORMATION FOR CLASS-B OPERATION T h = 25 C; R th mb-h =.4 K/W, unless otherwise specified. RF performance in a common source class-b circuit. MODE OF OPERATION f (MHz) V DS (V) I DQ (ma) P L (W) G p (db) CW class-b > 12 typ. 15 η D (%) > 5 typ. 6 CW class-b typ. 8 typ. 5 CW class-b typ. 8 typ. 5 Ruggedness in class-b operation The is capable of withstanding a full load mismatch corresponding to VSWR = 5 through all phases under the following conditions: V DS = 28 V; f = 5 MHz at rated output power. 3 MDA MDA489 G p (db) G p η D η D (%) P L (W) P L (W) P IN (W) Class-B operation; V DS = 28 V; I DQ = 2 ma; Z L = j14.3 Ω; f = 5 MHz. Class-B operation; V DS = 28 V; I DQ = 2 ma; Z L = j14.3 Ω; f = 5 MHz. Fig.9 Power gain and efficiency as functions of load power, typical values. Fig.1 Load power as a function of input power, typical values. October

7 handbook, full pagewidth 5 Ω input C1 C2 C4 L1 L2 L3 C3 C5 D.U.T.,,,, C12 L4 L7 L8 C13 L5 C14 C16 C15 5 Ω output R1 C9 C6 C8 L6 R5 C1 R2 C7 C11 MDA5 R3 R4 +V D Fig.11 Test circuit for class-b operation at 5 MHz. October

8 List of components (class-b test circuit at 5 MHz) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C6, C9, C16 multilayer ceramic chip capacitor 39 pf (note 1) C2, C14 multilayer ceramic chip capacitor 7.5 pf (note 1) C3, C5, C13, C15 film dielectric trimmer 9 pf C4 multilayer ceramic chip capacitor 2 pf (note 1) C7 multilayer ceramic chip capacitor 2 1 nf in parallel, 5 V C8, C1 multilayer ceramic chip capacitor 1 nf C11 aluminium electrolytic capacitor 1 µf, 63 V C12 multilayer ceramic chip capacitor 22 pf (note 1) L1 1 turn enamelled.8 mm copper 11 nh int. dia. 4.7 mm wire leads 2 5 mm L2 stripline (note 2) 42.5 Ω mm L3, L4 stripline (note 2) 42.5 Ω 6 3 mm L5 7 turns enamelled 1 mm copper wire 124 nh length 7.8 mm int. dia. 4 mm leads 2 5 mm L6 grade 3B Ferroxcube RF choke L7 stripline (note 2) 55.7 Ω 31 2 mm L8 1 turn enamelled 1 mm copper wire 8 nh int. dia. 3.2 mm leads 2 5 mm R1, R2.4 W metal film resistor 1 kω R3 1 turns cermet potentiometer 5 kω R4.4 W metal film resistor 19.6 kω R5 1 W metal film resistor 1 Ω Notes 1. American Technical Ceramics (ATC) capacitor, type 1B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (ε r = 2.2); thickness 1 32 inch. October

9 handbook, full pagewidth 52 mm 6 59 mm mm mounting screw rivet 7 mm strap strap R3 +V G +V R4 D R5 R2 C7 C8 C6 C9 L6 C1 C11 C1 C2 L1 C4 R1 L2 L3 L4 L5 L7 C12 L8 C14 C16 C3 C5 C13 C15 MDA487 The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Fig.12 Component layout for 5 MHz class-b test circuit. October

10 handbook, full pagewidth 5 Ω input C1 C2 C4 L1 L2 L3 C6 L4 C14 L5 D.U.T. L8 L8 L9 C17,,,,, C15 C16 5 Ω output C3 C5 C7 L6 C1 R3 C8 C11 C9 R4 L1 C12 C13 MDA499 R2 R1 +V D Fig.13 Test circuit for class-b operation at 96 MHz. October

11 List of components (class-b test circuit at 96 MHz) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C8, C1, C17 multilayer ceramic chip capacitor 68 pf (note 1) C2 multilayer ceramic chip capacitor 4.7 pf (note 2) C3, C5, C15, C16 film dielectric trimmer 1.2 to 5.5 pf C4 multilayer ceramic chip capacitor (note 2) pf in parallel C6, C7 multilayer ceramic chip capacitor 7.5 pf (note 2) C9, C12 multilayer ceramic chip capacitor 1 nf C14 multilayer ceramic chip capacitor (note 2) pf in parallel C11, C13 aluminum electrolytic capacitor 1 µf, 63 V L1 stripline (note 3) 5 Ω mm L2 stripline (note 3) 5 Ω mm L3 stripline (note 3) 5 Ω mm L4, L5 stripline (note 3) 42.5 Ω 3 3 mm L6 3 turns enamelled.8 mm copper wire 35 nh length 4.6 mm int. dia. 4 mm leads 2 5 mm L7 stripline (note 3) 5 Ω mm L8 stripline (note 3) 5 Ω mm L9 stripline (note 3) 5 Ω mm L1 grade 3B Ferroxcube RF choke R1.4 W metal film resistor 25 kω R2 1 turns potentiometer 5 kω R3.4 W metal film resistor 1 kω R4.4 W metal film resistor 1 Ω Notes 1. American Technical Ceramics (ATC) capacitor, type 1B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 1A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (ε r = 2.2); thickness 1 32 inch. October

12 1 MDA492 4 MDA494 Z i (Ω) r i Z L (Ω) R L 3 1 x i 2 X L f (MHz) f (MHz) Class-B operation; V DS = 28 V; I DQ = 2 ma; P L = 1 W. Class-B operation; V DS = 28 V; I DQ = 2 ma; P L = 1 W. Fig.14 Input impedance as a function of frequency (series components), typical values. Fig.15 Load impedance as a function of frequency (series components), typical values. 3 G p (db) MDA493 Optimum input and load impedances Optimum input impedance: j9.5 Ω. Optimum load impedance: j8.6 Ω. Conditions: class-b operation; V DS = 24 V; I DQ = 2 ma; f = 96 MHz; P L = 7.5 W; typical values f (MHz) Class-B operation; V DS = 28 V; I DQ = 2 ma; P L = 1 W. Fig.16 Power gain as a function of frequency, typical values. October

13 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT171A D A F D 1 U 1 B q C H 1 w 2 M C b 1 c H U 2 E 1 E A p w 1 M A B b w 3 M Q e 5 1 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b 1 c D D 1 E E 1 e F H H 1 p Q q U 1 U 2 w 1 w 2 w 3 mm inches OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT171A October

14 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October

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