Appendix A Glossary of Mathematical Symbols

Size: px
Start display at page:

Download "Appendix A Glossary of Mathematical Symbols"

Transcription

1 Appendix A Glossary of Mathematical Symbols This Appendix summarizes the mathematical symbols that are used throughout the book. Several symbols have multiple meanings; for example, α is used to represent the temperature coefficient of resistance, the coefficient of thermal expansion, and the Hooge factor. We have tried to separate these overloaded symbols in the text and make their meaning clear whenever they are used. Symbols that are only used once or twice (e.g. the Tsai model for phosphorus predeposition) are not included in the table for succinctness. J. C. Doll and B. L. Pruitt, Piezoresistor Design and Applications, 195 Microsystems and Nanosystems, DOI: 107/ , Springer Science+Business Media New York 2013

2 196 Appendix A: Glossary of Mathematical Symbols Table A.1 Glossary of mathematical symbols Symbol Units Description α - Hooge factor α ppm/k Coefficient of thermal expansion α ppm/k Temperature coefficient of resistance β - Sensitivity factor β1 - Sensitivity factor (piezoresistance factor effect) β2 - Sensitivity factor (depth effect) ɛ F/m Electrical permittivity ɛ - Mechanical strain η Pa-s Fluid viscosity γ - Resistance factor m Thermal healing length μ cm 2 /V-sec Carrier mobility ω rad/s Angular frequency π 1/Pa Piezoresistive coefficient π ref 1/Pa Piezoresistive coefficient at 300 K and cm 3 π l 1/Pa Longitudinal piezoresistive coefficient π t 1/Pa Transverse piezoresistive coefficient φ - Transverse loading factor ρ -m Electrical resistivity ρ kg/m 3 Density ρ f kg/m 3 Fluid density σ Pa Mechanical stress σ S/m Electrical conductivity A m 2 Cross-sectional or film area A VJ V/ Hz Amplifier Johnson voltage noise coefficient A VF V Amplifier 1/f voltage noise coefficient A IJ A/ Hz Amplifier Johnson current noise coefficient A IF A Amplifier 1/f current noise coefficient b kg/s Drag coefficient C 1/m Curvature C Pa Elastic stiffness tensor C F Electrical capacitance D m 2 /s Diffusivity d 31 pm/v Transverse piezoelectric coefficient E Pa Elastic modulus E F ev Fermi energy level E g ev Bandgap energy F TMN N/ Hz Thermomechanical force noise f 3dB Hz -3 db frequency f 0 Hz Undamped first resonant mode frequency f d Hz Damped first resonant mode frequency f min Hz Minimum measurement frequency f max Hz Maximum measurement frequency G - Amplifier gain G W/K Thermal conductance (continued)

3 Appendix A: Glossary of Mathematical Symbols 197 Table A.1 (continued) Symbol Units Description G f W/m-K Structure-fluid thermal conductance per unit length h ef f W/m 2 -K Effective convection coefficient h J-sec Planck s constant I m 4 Second moment of area I A Electrical current J A/m 2 Electrical current density k W/m-K Thermal conductivity k N/m Spring constant k b J/K Boltzmann s constant l m Sensor length l pr m Piezoresistor length m kg Mass m ef f kg Effective mass MDD m Minimum detectable displacement MDF N Minimum detectable force N cm 3 Dopant concentration N A cm 3 Acceptor dopant concentration N B cm 3 Background dopant concentration N D cm 3 Donor dopant concentration N epi cm 3 Epitaxial layer dopant concentration n cm 3 Carrier density n i cm 3 Intrinsic carrier density N pr - Number of piezoresistors in the Wheatstone bridge N ef f - Effective number of carriers N total - Total number of carriers N ef f z µm 2 Effective carrier density per unit area Nz total µm 2 Total carrier density per unit area P m Perimeter P - Piezoresistance factor P - Average piezoresistance factor q C Single electron charge Q C Electrical polarization charge Q - Quality factor R Total electrical resistance R K/W Thermal resistance R contact Contact resistance R excess Excess electrical resistance R pr Piezoresistor electrical resistance R s / Sheet resistance S 1/Pa Elastic compliance tensor S XV V/m Displacement sensitivity S FV V/N Force sensitivity S A V 2 /Hz Amplifier noise power spectral density S H V 2 /Hz Hooge (1/f) noise power spectral density (continued)

4 198 Appendix A: Glossary of Mathematical Symbols Table A.1 (continued) Symbol Units Description S J V 2 /Hz Johnson noise power spectral density S TMN V 2 /Hz Thermomechanical noise power spectral density T K Temperature T K Ambient temperature T pr K Average piezoresistor temperature T n - Temperature normalized to 300 K t s Time t m Sensor thickness t j m Junction depth t pr m Epitaxial piezoresistor thickness V bias V Resistor bias voltage V bridge V Bridge bias voltage V A V/ Hz Amplifier noise spectral density V H V/ Hz Hooge (1/f) noise spectral density V J V/ Hz Johnson noise spectral density V noise V/ Hz Overall noise spectral density V TMN V/ Hz Thermomechanical noise spectral density w m Sensor width w pr m Piezoresistor width W W Electrical power dissipation z n m Neutral axis

5 Appendix B Ion Implantation Lookup Tables The following lookup tables can be used to calculate the sensitivity factor (β1 and β 2 ), effective density of carriers per unit area (Nz ef f ), sheet resistance (R s ) and junction depth (t j ) for boron, phosphorus and arsenic ion implantation processes. Park presented the first version of these lookup tables in 2010 [133, 295]. The following tables generalize the results to multiple dopant types and include tables for additional parameters (Nz ef f, R s and t j ). The TSUPREM-4 templates and combination of Python and MATLAB scripts used to generate the tables are part of our open source piezoresistor design code (Appendix C). In all of the tables, the first number corresponds to a process with only an inert anneal while the second number (in parentheses) corresponds to a process with a 1,500 Å wet passivation oxide grown immediately before the N 2 anneal. The wet passivation oxide was grown at the indicated process temperature for 66, 15, or 5 minutes at 900, 1,000, or 1,100 C, respectively. Junction depths are calculated assuming a background resistivity of 10 -cm. J. C. Doll and B. L. Pruitt, Piezoresistor Design and Applications, 199 Microsystems and Nanosystems, DOI: 107/ , Springer Science+Business Media New York 2013

6 200 Appendix B: Ion Implantation Lookup Tables Table B.1 Look-up table for β 1 (-) and β 2 (µm) for boron ion implantation Dose (cm 2 ) Energy (kev) Temp.(c) Time (min) β (0.82) 20 1, (0.83) 1, (0.85) (0.23) 0.22 (0.37) 0.75 (0.82) (0.86) 0.13 (0.24) 0.26 () 0.75 (0.82) (0.86) 0.14 (0.24) 0.29 (0.42) 0.75 (0.82) (0.86) 0.14 (0.25) 0.33 (0.45) 0.75 (0.82) (0.86) 0.15 (0.25) (0.82) (0.86) 0.16 (0.26) 0.38 (0.49) 0.75 (0.82) (0.87) (0.19) 0.16 (0.26) 0.41 (0.51) 0.75 (0.82) (0.87) (0.19) 0.17 (0.27) 0.43 (0.52) , (0.81) 1, (0.83) 0.22 (0.26) 0.22 (0.30) (0.42) (0.81) (0.26) 0.22 (0.30) 0.31 (0.44) (0.81) (0.26) 0.23 (0.30) (0.82) (0.26) 0.23 (0.31) 0.37 (0.49) (0.82) (0.26) 0.23 (0.31) (0.51) (0.82) 0.79 (0.85) 0.22 (0.26) 0.24 (0.32) 0.42 (0.52) (0.82) 0.80 (0.85) 0.22 (0.26) 0.24 (0.32) 0.44 (0.54) (0.82) 0.80 (0.85) 0.22 (0.26) 0.25 (0.32) 0.47 (0.56) , (0.81) 1, (0.83) (0.31) (0.34) 0.33 (0.45) (0.81) 0.79 (0.83) (0.31) (0.34) 0.36 () (0.81) 0.79 (0.83) (0.31) 0.29 (0.35) (0.81) 0.79 (0.83) (0.31) 0.29 (0.35) 0.41 (0.52) (0.81) 0.80 (0.31) 0.29 (0.36) 0.44 (0.54) (0.81) 0.80 (0.31) 0.30 (0.36) 0.46 (0.55) (0.81) 0.80 (0.31) 0.30 (0.36) (0.57) (0.81) 0.80 (0.31) 0.30 (0.37) 0.50 (0.59) (0.67) 20 1, , (0.69) 0.05 (0.16) (0.23) 0.25 (0.38) 0.47 (0.67) (0.69) (0.16) 0.14 (0.24) 0.29 () (0.68) 0.55 (0.67) 0.60 (0.70) (0.16) 0.16 (0.24) 0.33 (0.43) 0.49 (0.68) 0.55 (0.67) 0.61 (0.70) 0.07 (0.16) 0.17 (0.25) 0.36 (0.45) 0.50 (0.68) 0.56 (0.67) 0.62 (0.71) 0.08 (0.16) 0.18 (0.26) () 0.51 (0.68) 0.56 (0.67) 0.62 (0.71) 0.08 (0.16) 0.19 (0.26) (0.68) 0.57 (0.67) 0.63 (0.71) 0.09 (0.16) 0.20 (0.27) 0.45 (0.52) 0.52 (0.68) 0.57 (0.68) 0.63 (0.71) 0.09 (0.17) 0.21 (0.27) 0.47 (0.54) (0.25) (0.25) (0.25) (0.25) (0.26) (0.26) (0.26) (0.26) (continued)

7 Appendix B: Ion Implantation Lookup Tables 201 Table B.1 (continued) Dose (cm 2 )Energy (kev)temp. ( C) Time (min) β , , (0.68) 0.19 (0.29) 0.27 () (0.68) 0.20 (0.29) 0.31 (0.43) (0.69) 0.21 (0.30) 0.35 (0.46) (0.69) 0.21 (0.30) 0.38 () (0.69) 0.22 (0.31) (0.70) 0.23 (0.31) 0.44 (0.52) (0.70) 0.24 (0.31) 0.46 (0.54) 0.58 (0.67) 0.64 (0.70) 0.24 (0.32) (0.56) , , (0.67) 0.27 (0.34) 0.26 (0.35) 0.32 (0.45) (0.68) 0.27 (0.34) 0.27 (0.36) (0.68) 0.27 (0.34) 0.27 (0.36) (0.69) 0.27 (0.34) (0.37) 0.41 (0.52) (0.69) 0.27 (0.34) 0.29 (0.37) 0.44 (0.54) (0.69) 0.27 (0.34) 0.29 (0.37) 0.46 (0.56) (0.69) 0.27 (0.34) 0.30 (0.38) 0.49 (0.57) (0.70) 0.27 (0.34) 0.30 (0.38) 0.51 (0.59) 900 (0.51) 20 1, (0.45) 1, () 0.14 (0.20) 0.30 (0.39) (0.51) 0.41 (0.46) () () 0.17 (0.21) 0.37 (0.44) 0.41 (0.46) 0.41 (0.49) () 0.19 (0.23) (0.49) (0.13) 0.21 (0.25) (0.51) (0.13) 0.22 (0.26) 0.52 (0.54) (0.51) (0.13) 0.24 (0.27) 0.56 (0.57) (0.51) 0.41 () 0.45 (0.51) 0.11 (0.14) 0.25 () 0.59 (0.60) (0.51) 0.42 () 0.45 (0.51) (0.14) 0.27 (0.29) 0.63 (0.62) ,000 (0.42) 1, (0.45) (0.20) 0.32 (0.41) (0.42) (0.46) (0.22) 0.39 (0.45) (0.42) (0.23) 0.45 (0.49) (0.42) (0.25) 0.49 (0.53) (0.42) 0.43 () (0.26) 0.53 (0.56) (0.42) 0.44 () () 0.57 (0.59) (0.42) 0.44 (0.49) (0.29) 0.61 (0.62) 0.41 (0.42) 0.45 (0.49) 0.18 (0.31) 0.64 (0.64) ,000 (0.41) 1, (0.45) 0.26 (0.27) 0.21 (0.23) 0.34 (0.42) (0.41) (0.46) 0.26 () 0.22 (0.24) 0.41 (0.51) (0.41) 0.42 (0.46) 0.26 () 0.24 (0.25) 0.46 (0.51) (0.51) (0.41) () 0.25 (0.27) 0.51 (0.54) (0.51) (0.41) () 0.26 () 0.55 (0.57) (0.41) 0.44 () 0.26 () (0.29) 0.58 (0.60) (0.41) 0.44 () 0.26 () 0.29 (0.30) 0.62 (0.63) (0.41) 0.45 (0.49) 0.26 () 0.30 (0.32) 0.65

8 202 Appendix B: Ion Implantation Lookup Tables Table B.2 Look-up table for β 1 (-) and β 2 (µm) for phosphorus ion implantation Dose (cm 2 ) Energy (kev) Temp. ( C) Time (min) β , (0.86) 1, (0.91) 0.03 (0.09) 0.07 (0.16) 0.20 (0.32) (0.87) 0.78 (0.91) 0.03 (0.09) 0.08 (0.17) 0.25 (0.35) (0.87) 0.78 (0.91) (0.09) 0.09 (0.17) 0.29 (0.37) (0.87) 0.79 (0.92) (0.09) 0.32 () (0.87) 0.80 (0.92) (0.09) (0.42) (0.87) 0.80 (0.92) (0.09) (0.19) 0.39 (0.44) (0.87) 0.81 (0.92) (0.09) 0.13 (0.19) 0.41 (0.46) (0.87) 0.81 (0.92) () 0.13 (0.20) 0.44 () (0.73) , (0.78) 1, (0.85) () 0.08 (0.17) 0.20 (0.35) 0.65 (0.73) 0.68 (0.78) 0.76 (0.85) () (0.38) 0.65 (0.73) 0.69 (0.79) 0.77 (0.85) () 0.29 () 0.65 (0.73) 0.70 (0.79) 0.77 (0.86) () 0.11 (0.19) 0.33 (0.43) 0.65 (0.73) 0.70 (0.79) 0.78 (0.86) () (0.19) 0.36 (0.45) 0.65 (0.73) 0.71 (0.79) 0.78 (0.86) 0.07 () 0.13 (0.20) (0.73) 0.71 (0.79) 0.79 (0.86) 0.07 () 0.13 (0.20) (0.73) 0.72 (0.79) 0.79 (0.86) 0.07 () 0.14 (0.21) 0.44 (0.52) (0.73) 80 1, (0.76) 1, (0.82) () 0.11 (0.19) 0.22 (0.36) 0.69 (0.73) 0.71 (0.77) 0.76 (0.83) () (0.19) 0.26 (0.39) 0.69 (0.73) 0.71 (0.77) 0.77 (0.83) () 0.13 (0.20) 0.30 (0.41) 0.69 (0.73) 0.71 (0.77) 0.78 (0.83) () 0.13 (0.20) 0.33 (0.44) 0.69 (0.73) 0.72 (0.77) 0.78 () 0.14 (0.20) 0.37 (0.46) 0.69 (0.73) 0.72 (0.77) 0.79 () 0.15 (0.21) 0.39 () 0.69 (0.73) 0.72 (0.77) 0.79 () 0.15 (0.21) 0.42 (0.51) 0.69 (0.73) 0.73 (0.77) 0.79 () 0.16 (0.22) 0.45 (0.53) (0.64) 20 1, (0.74) 1, (0.82) 0.09 (0.09) (0.16) 0.20 (0.34) (0.74) 0.59 (0.82) 0.09 (0.09) 0.11 (0.17) 0.24 (0.37) (0.74) 0.61 (0.83) 0.09 (0.09) (0.17) () (0.74) 0.62 (0.83) (0.09) 0.31 (0.43) (0.74) 0.62 (0.83) (0.09) (0.45) (0.75) 0.63 (0.09) 0.14 (0.19) 0.37 () (0.75) 0.64 (0.09) 0.15 (0.19) (0.75) 0.64 (0.09) 0.15 (0.20) 0.42 (0.52) (0.57) 0.05 () 0.43 (0.57) () 0.44 (0.57) 0.07 () 0.45 (0.57) 0.08 () 0.46 (0.57) 0.08 (0.13) 0.46 (0.57) 0.09 (0.13) 0.47 (0.57) 0.09 (0.13) 0.47 (0.57) 0.09 (0.13) (continued)

9 Appendix B: Ion Implantation Lookup Tables 203 Table B.2 (continued) Dose (cm 2 )Energy (kev)temp. ( C) Time (min) β , (0.59) 1, (0.71) 0.09 (0.14) 0.20 (0.34) 0.49 (0.59) 0.57 (0.72) (0.15) 0.24 (0.37) 0.50 (0.60) 0.58 (0.72) 0.11 (0.15) (0.39) 0.50 (0.60) 0.59 (0.73) (0.16) 0.31 (0.42) 0.51 (0.60) 0.60 (0.73) 0.13 (0.16) 0.34 (0.44) 0.51 (0.61) 0.61 (0.73) 0.14 (0.17) (0.61) 0.61 (0.74) (0.49) 0.52 (0.61) 0.62 (0.74) (0.51) (0.55) 80 1, (0.56) 1, (0.67) 0.05 (0.13) 0.09 (0.14) 0.20 (0.33) 0.42 (0.55) 0.49 (0.56) 0.57 (0.68) 0.05 (0.13) (0.15) 0.24 (0.36) 0.42 (0.55) 0.50 (0.57) 0.58 (0.68) (0.13) 0.11 (0.15) (0.38) 0.42 (0.55) 0.50 (0.57) 0.59 (0.69) (0.13) (0.16) 0.31 (0.41) 0.43 (0.55) 0.51 (0.57) 0.60 (0.69) (0.13) 0.13 (0.16) 0.34 (0.43) 0.43 (0.55) 0.52 (0.58) 0.61 (0.70) (0.13) 0.13 (0.17) 0.37 (0.46) 0.44 (0.56) 0.52 (0.58) 0.61 (0.70) (0.13) 0.14 (0.17) 0.39 () 0.44 (0.56) 0.53 (0.58) 0.62 (0.70) 0.07 (0.13) (0.53) 20 1, (0.49) 1, (0.59) 0.53 () 0.35 (0.15) 0.36 (0.30) 0.49 (0.53) 0.39 (0.49) 0.41 (0.60) 0.54 () 0.35 (0.15) 0.38 (0.33) 0.49 (0.53) (0.49) 0.42 (0.61) 0.55 () 0.36 (0.16) 0.41 (0.36) 0.49 (0.53) 0.43 (0.62) 0.55 () 0.36 (0.16) 0.43 (0.39) 0.49 (0.53) 0.43 (0.62) 0.56 () 0.36 (0.17) 0.45 (0.41) (0.53) 0.44 (0.63) 0.56 (0.29) (0.43) (0.54) (0.51) 0.44 (0.63) 0.56 (0.29) (0.46) (0.54) 0.41 (0.51) 0.45 (0.63) 0.56 (0.29) 0.37 (0.19) 0.51 () () , (0.39) 1, (0.46) 0.15 (0.59) 0.22 (0.25) 0.26 (0.27) 0.39 () 0.33 (0.39) (0.59) 0.22 (0.26) 0.30 (0.30) 0.39 (0.49) 0.33 (0.39) 0.38 () 0.18 (0.59) 0.22 (0.26) 0.34 (0.33) 0.39 (0.49) 0.33 (0.39) 0.38 (0.49) 0.19 (0.60) 0.23 (0.27) 0.37 (0.36) (0.49) 0.34 () 0.39 (0.49) 0.20 (0.59) 0.24 (0.27) (0.38) (0.49) 0.34 () 0.21 (0.59) 0.24 () 0.42 (0.41) (0.49) 0.34 () 0.22 (0.59) 0.25 () 0.45 (0.43) (0.49) 0.35 () 0.41 (0.51) 0.23 (0.60) 0.26 () 0.47 (0.45) , (0.37) 1, (0.43) 0.08 (0.59) 0.17 (0.25) 0.25 (0.27) (0.37) 0.36 (0.45) 0.09 (0.60) 0.18 (0.26) 0.29 (0.30) (0.38) 0.38 (0.46) 0.11 (0.60) 0.19 (0.26) 0.33 (0.33) (0.38) 0.39 (0.46) (0.60) 0.19 (0.27) 0.36 (0.36) (0.38) (0.61) 0.20 (0.27) 0.39 (0.39) (0.38) () 0.14 (0.61) 0.21 () 0.41 (0.41) (0.39) 0.41 () 0.15 (0.61) 0.22 () 0.44 (0.43) (0.39) 0.41 (0.49) 0.16 (0.61) 0.23 (0.29) 0.46 (0.45)

10 204 Appendix B: Ion Implantation Lookup Tables Table B.3 Look-up table for β 1 (-) and β 2 (µm) for arsenic ion implantation Dose (cm 2 )Energy (kev)temp. ( C) Time (min) β , (0.90) 1, (0.93) 0.01 (0.01) (0.08) (0.90) 0.80 (0.94) 0.01 (0.01) (0.09) (0.91) 0.81 (0.94) 0.01 (0.01) () (0.91) 0.82 (0.94) 0.01 (0.01) (0.11) 0.67 (0.85) 0.75 (0.91) 0.82 (0.94) 0.01 (0.01) () 0.13 () 0.67 (0.85) 0.75 (0.91) 0.83 (0.95) 0.01 (0.01) () 0.14 (0.13) 0.67 (0.85) 0.76 (0.91) 0.83 (0.95) (0.01) 0.05 () 0.15 (0.14) 0.68 (0.85) 0.76 (0.92) 0.83 (0.95) (0.01) 0.05 () 0.16 (0.14) (0.69) , (0.73) 1, (0.81) () (0.09) 0.54 (0.69) 0.60 (0.73) 0.68 (0.82) () () () 0.54 (0.69) 0.61 (0.74) 0.69 (0.83) () () 0.11 () 0.54 (0.69) 0.62 (0.74) 0.70 (0.83) () () 0.13 (0.13) 0.55 (0.69) 0.62 (0.75) 0.71 (0.83) () 0.05 () 0.14 (0.14) 0.55 (0.69) 0.63 (0.75) 0.71 () 0.05 (0.05) 0.15 (0.15) 0.55 (0.70) 0.63 (0.75) 0.72 () 0.05 (0.05) 0.16 (0.16) 0.56 (0.70) 0.63 (0.76) 0.72 () (0.05) 0.17 (0.17) , (0.68) 1, (0.76) () 0.08 (0.09) (0.68) 0.68 (0.77) () (0.11) (0.69) 0.70 (0.78) 0.05 (0.05) () (0.70) 0.70 (0.78) 0.05 (0.05) 0.13 (0.13) (0.70) 0.71 (0.79) 0.05 (0.05) 0.14 (0.14) (0.70) 0.72 (0.79) (0.05) 0.15 (0.15) (0.71) 0.72 (0.05) 0.16 (0.16) (0.71) 0.72 () 0.17 (0.17) (0.70) 20 1, , (0.87) 0.01 (0.01) (0.08) 0.46 (0.71) 0.55 (0.81) 0.64 (0.88) 0.01 (0.01) () 0.46 (0.71) 0.56 (0.82) 0.65 (0.89) 0.01 (0.01) (0.11) 0.47 (0.71) 0.57 (0.82) 0.66 (0.89) (0.01) 0.05 () 0.13 () (0.72) 0.57 (0.82) 0.67 (0.89) (0.01) 0.05 () 0.14 (0.13) (0.72) 0.58 (0.83) 0.67 (0.89) () 0.05 () 0.15 (0.14) 0.49 (0.72) 0.58 (0.83) 0.68 (0.90) () 0.05 () 0.16 (0.15) 0.49 (0.73) 0.59 (0.83) 0.68 (0.90) () (0.05) 0.17 (0.16) (0.49) (0.01) 0.36 (0.01) 0.36 () 0.36 (0.51) () 0.36 (0.51) () 0.36 (0.52) () 0.37 (0.52) () 0.37 (0.52) () (continued)

11 Appendix B: Ion Implantation Lookup Tables 205 Table B.3 (continued) Dose (cm 2 )Energy (kev)temp. ( C) Time (min) β , (0.56) 1,100 (0.67) (0.09) (0.57) 0.49 (0.68) () (0.11) 0.41 (0.58) 0.51 (0.69) 0.05 () 0.14 () 0.42 (0.59) 0.52 (0.70) (0.05) 0.15 (0.13) 0.43 (0.60) 0.52 (0.71) (0.05) 0.16 (0.15) 0.44 (0.60) 0.53 (0.71) (0.05) 0.17 (0.16) 0.44 (0.61) 0.54 (0.72) 0.07 () 0.19 (0.17) 0.45 (0.61) 0.54 (0.72) 0.07 () (0.44) 80 1,000 1,100 (0.61) () () () 0.37 (0.44) 0.41 (0.51) 0.50 (0.63) () 0.05 () (0.11) 0.37 (0.45) 0.42 (0.52) 0.51 (0.64) () 0.05 (0.05) 0.14 (0.13) 0.37 (0.45) 0.43 (0.53) 0.52 (0.64) () (0.05) 0.15 (0.14) 0.37 (0.46) 0.44 (0.54) 0.53 () () 0.16 (0.15) 0.37 (0.46) 0.44 (0.54) 0.53 () 0.07 () 0.17 (0.16) 0.37 (0.46) 0.45 (0.55) () 0.07 () 0.19 (0.17) (0.55) () 0.07 () , (0.62) 1, (0.73) (0.01) (0.09) 0.33 (0.51) 0.37 (0.63) 0.45 (0.74) (0.01) () 0.34 (0.52) 0.37 (0.64) 0.46 (0.75) (0.01) 0.05 () 0.14 () 0.34 (0.53) (0.76) (0.01) () 0.16 (0.13) 0.34 (0.53) 0.39 (0.76) () () 0.17 (0.14) 0.34 (0.54) (0.77) () 0.07 (0.05) 0.19 (0.15) 0.34 (0.54) 0.49 (0.77) () 0.07 (0.05) 0.20 (0.16) 0.34 (0.54) (0.67) 0.50 (0.78) () 0.08 (0.05) 0.21 (0.17) (0.31) ,000 (0.35) 1, () () () (0.32) 0.29 (0.35) 0.32 () () 0.05 (0.05) 0.15 (0.14) (0.32) 0.29 (0.36) 0.33 (0.49) 0.03 () () 0.17 (0.15) (0.33) 0.29 (0.37) () () 0.19 (0.17) 0.29 (0.33) 0.29 (0.37) () 0.07 (0.07) (0.33) 0.30 (0.38) 0.35 (0.51) (0.07) 0.23 (0.19) 0.29 (0.33) 0.30 (0.38) 0.35 (0.52) (0.08) 0.24 (0.20) 0.29 (0.33) 0.30 (0.39) 0.36 (0.52) (0.08) 0.25 (0.21) 900 (0.29) 80 1,000 (0.32) 1, (0.42) (0.05) (0.13) (0.30) 0.29 (0.33) 0.32 (0.43) 0.05 (0.05) 0.15 (0.15) (0.31) 0.29 (0.33) 0.33 (0.44) () 0.17 (0.16) (0.31) 0.29 (0.34) 0.34 (0.45) 0.03 () 0.19 (0.31) 0.30 (0.34) 0.35 (0.45) (0.07) 0.21 (0.19) (0.31) 0.30 (0.35) 0.35 (0.46) (0.07) 0.23 (0.20) (0.31) 0.30 (0.35) 0.36 (0.46) (0.08) 0.24 (0.21) (0.31) 0.30 (0.35) (0.08) 0.25 (0.23)

12 206 Appendix B: Ion Implantation Lookup Tables Table B.4 Look-up table for Rs ( / ) for boron ion implantation Dose (cm 2 ) Energy (kev) Temp. ( C) e2 (8.49e2) 20 1, e2 (7.72e2) 1, e2 (6.02e2) Time (min) e2 (8.50e2) 4.47e2 (7.67e2) 3.15e2 (5.87e2) 5.78e2 (8.51e2) 4.32e2 (7.63e2) 2.98e2 (5.73e2) 5.72e2 (8.52e2) 4.21e2 (7.59e2) 2.86e2 (5.62e2) 5.66e2 (8.52e2) 4.10e2 (7.55e2) 2.77e2 (5.51e2) 5.61e2 (8.53e2) 4.01e2 (7.52e2) 2.68e2 (5.42e2) 5.57e2 (8.53e2) 3.93e2 (7.48e2) 2.62e2 (5.34e2) 5.53e2 (8.53e2) 3.86e2 (7.44e2) 2.56e2 (5.26e2) e2 (4.69e2) , e2 (4.66e2) 1, e2 (4.17e2) 3.67e2 (4.69e2) 3.44e2 (4.65e2) 2.89e2 (4.08e2) 3.67e2 (4.69e2) 3.40e2 (4.64e2) 2.79e2 (4.00e2) 3.67e2 (4.70e2) 3.36e2 (4.63e2) 2.70e2 (3.93e2) 3.66e2 (4.70e2) 3.33e2 (4.61e2) 2.63e2 (3.87e2) 3.66e2 (4.70e2) 3.30e2 (4.60e2) 2.57e2 (3.82e2) 3.65e2 (4.70e2) 3.27e2 (4.59e2) 2.52e2 (3.77e2) 3.65e2 (4.71e2) 3.25e2 (4.57e2) 2.47e2 (3.72e2) e2 (3.75e2) 80 1, e2 (3.78e2) 1, e2 (3.53e2) 3.10e2 (3.76e2) 3.04e2 (3.78e2) 2.71e2 (3.47e2) 3.10e2 (3.76e2) 3.02e2 (3.77e2) 2.64e2 (3.41e2) 3.11e2 (3.76e2) 3.00e2 (3.76e2) 2.58e2 (3.36e2) 3.11e2 (3.76e2) 2.98e2 (3.76e2) 2.52e2 (3.31e2) 3.11e2 (3.76e2) 2.97e2 (3.75e2) 2.47e2 (3.27e2) 3.11e2 (3.76e2) 2.96e2 (3.74e2) 2.43e2 (3.23e2) 3.11e2 (3.77e2) 2.94e2 (3.73e2) 2.39e2 (3.19e2) e1 (2.20e2) 20 1, e1 (1.30e2) 1, e1 (1.00e2) 9.21e1 (2.20e2) 6.53e1 (1.30e2) 5.27e1 (9.80e1) 8.93e1 (2.20e2) 6.32e1 (1.29e2) 5.11e1 (9.60e1) 8.79e1 (2.21e2) 6.17e1 (1.28e2) 5.00e1 (9.43e1) 8.83e1 (2.21e2) 6.05e1 (1.27e2) 4.90e1 (9.27e1) 8.81e1 (2.21e2) 5.96e1 (1.27e2) 4.82e1 (9.13e1) 8.74e1 (2.22e2) 5.87e1 (1.26e2) 4.75e1 (9.00e1) 8.64e1 (2.22e2) 5.80e1 (1.25e2) 4.68e1 (8.88e1) e1 (1.04e2) 6.62e1 (1.05e2) 6.64e1 (1.05e2) 6.66e1 (1.05e2) 6.68e1 (1.05e2) 6.69e1 (1.05e2) 6.70e1 (1.05e2) 6.70e1 (1.06e2) (continued)

13 Appendix B: Ion Implantation Lookup Tables 207 Table B.4 (continued) Dose (cm 2 ) Energy (kev) Temp. ( C) , e1 (9.71e1) 1, e1 (8.40e1) Time (min) e1 (9.70e1) 5.26e1 (8.23e1) 5.99e1 (9.68e1) 5.13e1 (8.09e1) 5.91e1 (9.66e1) 5.02e1 (7.96e1) 5.85e1 (9.63e1) 4.93e1 (7.85e1) 5.79e1 (9.61e1) 4.85e1 (7.74e1) 5.74e1 (9.58e1) 4.78e1 (7.65e1) 5.69e1 (9.55e1) 4.72e1 (7.56e1) e1 (8.10e1) 80 1, e1 (7.96e1) 1, e1 (7.37e1) 6.01e1 (8.11e1) 5.60e1 (7.97e1) 5.07e1 (7.26e1) 6.00e1 (8.12e1) 5.54e1 (7.97e1) 4.97e1 (7.17e1) 5.99e1 (8.13e1) 5.49e1 (7.96e1) 4.88e1 (7.07e1) 5.98e1 (8.14e1) 5.45e1 (7.95e1) 4.81e1 (6.99e1) 5.97e1 (8.15e1) 5.42e1 (7.95e1) 4.74e1 (6.91e1) 5.97e1 (8.16e1) 5.39e1 (7.93e1) 4.68e1 (6.84e1) 5.96e1 (8.17e1) 5.36e1 (7.92e1) 4.63e1 (6.77e1) e1 (5.90e1) 20 1, e1 (2.12e1) 1, e0 (1.24e1) 5.74e1 (5.70e1) 1.81e1 (2.04e1) 7.00e0 (1.22e1) 5.47e1 (5.52e1) 1.60e1 (1.98e1) 6.88e0 (1.20e1) 5.25e1 (5.35e1) 1.45e1 (1.93e1) 6.79e0 (1.18e1) 5.06e1 (5.20e1) 1.34e1 (1.90e1) 6.72e0 (1.17e1) 4.89e1 (5.10e1) 1.25e1 (1.87e1) 6.66e0 (1.16e1) 4.74e1 (5.03e1) 1.17e1 (1.85e1) 6.61e0 (1.15e1) 4.60e1 (4.94e1) 1.13e1 (1.83e1) 6.57e0 (1.14e1) e1 (3.84e1) , e1 (1.53e1) 1, e0 (1.03e1) 3.49e1 (3.79e1) 1.44e1 (1.40e1) 6.70e0 (1.01e1) 3.41e1 (3.75e1) 1.31e1 (1.30e1) 6.59e0 (9.91e0) 3.34e1 (3.71e1) 1.21e1 (1.22e1) 6.51e0 (9.78e0) 3.28e1 (3.67e1) 1.14e1 (1.15e1) 6.44e0 (9.68e0) 3.22e1 (3.62e1) 1.08e1 (1.09e1) 6.39e0 (9.59e0) 3.16e1 (3.58e1) 1.03e1 (1.05e1) 6.34e0 (9.51e0) 3.11e1 (3.55e1) 9.81e0 (1.02e1) 6.30e0 (9.45e0) e1 (2.64e1) 80 1, e1 (1.31e1) 1, e0 (9.46e0) 2.38e1 (2.68e1) 1.17e1 (1.20e1) 6.59e0 (9.30e0) 2.34e1 (2.69e1) 1.09e1 (1.12e1) 6.49e0 (9.17e0) 2.30e1 (2.68e1) 1.03e1 (1.06e1) 6.41e0 (9.07e0) 2.27e1 (2.67e1) 9.77e0 (1.01e1) 6.35e0 (8.98e0) 2.25e1 (2.66e1) 9.32e0 (9.73e0) 6.30e0 (8.90e0) 2.23e1 (2.65e1) 8.94e0 (9.35e0) 6.26e0 (8.83e0) 2.21e1 (2.63e1) 8.64e0 (9.12e0) 6.22e0 (8.77e0)

14 208 Appendix B: Ion Implantation Lookup Tables Table B.5 Look-up table for Rs ( / ) for phosphorus ion implantation Dose (cm 2 ) Energy (kev) Temp. ( C) e2 (7.10e2) 20 1, e2 (8.53e2) 1, e2 (9.15e2) Time (min) e2 (7.05e2) 3.04e2 (8.41e2) 2.07e2 (8.90e2) 3.80e2 (7.01e2) 2.92e2 (8.30e2) 1.95e2 (8.68e2) 3.75e2 (6.98e2) 2.83e2 (8.20e2) 1.87e2 (8.51e2) 3.70e2 (6.95e2) 2.75e2 (8.11e2) 1.80e2 (8.36e2) 3.66e2 (6.92e2) 2.68e2 (8.02e2) 1.74e2 (8.23e2) 3.63e2 (6.90e2) 2.63e2 (7.94e2) 1.70e2 (8.12e2) 3.59e2 (6.88e2) 2.58e2 (7.86e2) 1.66e2 (8.02e2) e2 (3.29e2) , e2 (3.12e2) 1, e2 (3.16e2) 2.67e2 (3.28e2) 2.32e2 (3.09e2) 1.69e2 (3.05e2) 2.63e2 (3.26e2) 2.26e2 (3.05e2) 1.60e2 (2.96e2) 2.61e2 (3.25e2) 2.21e2 (3.02e2) 1.53e2 (2.89e2) 2.60e2 (3.24e2) 2.16e2 (2.99e2) 1.48e2 (2.83e2) 2.58e2 (3.24e2) 2.12e2 (2.96e2) 1.43e2 (2.77e2) 2.57e2 (3.23e2) 2.08e2 (2.94e2) 1.40e2 (2.72e2) 2.56e2 (3.22e2) 2.05e2 (2.91e2) 1.37e2 (2.67e2) e2 (2.76e2) 80 1, e2 (2.49e2) 1, e2 (2.37e2) 2.39e2 (2.75e2) 2.22e2 (2.46e2) 1.70e2 (2.29e2) 2.37e2 (2.74e2) 2.18e2 (2.44e2) 1.61e2 (2.23e2) 2.36e2 (2.74e2) 2.14e2 (2.41e2) 1.55e2 (2.17e2) 2.36e2 (2.73e2) 2.10e2 (2.39e2) 1.50e2 (2.12e2) 2.35e2 (2.72e2) 2.07e2 (2.37e2) 1.46e2 (2.08e2) 2.35e2 (2.72e2) 2.04e2 (2.35e2) 1.42e2 (2.05e2) 2.34e2 (2.71e2) 2.02e2 (2.34e2) 1.39e2 (2.01e2) e1 (1.74e2) 20 1, e1 (2.16e2) 1, e1 (2.33e2) 4.95e1 (1.73e2) 4.67e1 (2.14e2) 4.03e1 (2.25e2) 4.86e1 (1.72e2) 4.62e1 (2.11e2) 3.91e1 (2.19e2) 4.81e1 (1.72e2) 4.56e1 (2.09e2) 3.81e1 (2.13e2) 4.78e1 (1.71e2) 4.52e1 (2.07e2) 3.73e1 (2.08e2) 4.75e1 (1.71e2) 4.48e1 (2.05e2) 3.67e1 (2.04e2) 4.73e1 (1.71e2) 4.44e1 (2.03e2) 3.61e1 (2.00e2) 4.71e1 (1.70e2) 4.41e1 (2.01e2) 3.56e1 (1.96e2) e1 (6.61e1) 4.28e1 (6.60e1) 4.11e1 (6.58e1) 4.00e1 (6.57e1) 3.93e1 (6.56e1) 3.88e1 (6.55e1) 3.84e1 (6.54e1) 3.81e1 (6.53e1) (continued)

15 Appendix B: Ion Implantation Lookup Tables 209 Table B.5 (continued) Dose (cm 2 ) Energy (kev) Temp. ( C) , e1 (6.63e1) 1, e1 (8.17e1) Time (min) e1 (6.57e1) 3.22e1 (7.95e1) 3.67e1 (6.51e1) 3.13e1 (7.77e1) 3.63e1 (6.46e1) 3.06e1 (7.61e1) 3.59e1 (6.41e1) 3.00e1 (7.46e1) 3.56e1 (6.36e1) 2.95e1 (7.34e1) 3.53e1 (6.32e1) 2.91e1 (7.22e1) 3.50e1 (6.28e1) 2.87e1 (7.11e1) e1 (5.34e1) 80 1, e1 (5.05e1) 1, e1 (5.94e1) 4.40e1 (5.32e1) 3.84e1 (5.01e1) 3.31e1 (5.79e1) 4.31e1 (5.31e1) 3.79e1 (4.97e1) 3.22e1 (5.67e1) 4.25e1 (5.29e1) 3.74e1 (4.93e1) 3.14e1 (5.56e1) 4.21e1 (5.28e1) 3.70e1 (4.90e1) 3.09e1 (5.47e1) 4.17e1 (5.28e1) 3.67e1 (4.87e1) 3.03e1 (5.38e1) 4.14e1 (5.27e1) 3.64e1 (4.84e1) 2.99e1 (5.31e1) 4.11e1 (5.26e1) 3.61e1 (4.81e1) 2.95e1 (5.24e1) e0 (2.20e1) 20 1, e0 (2.58e1) 1, e0 (3.22e1) 9.66e0 (2.19e1) 5.83e0 (2.56e1) 5.46e0 (3.15e1) 9.39e0 (2.19e1) 5.75e0 (2.55e1) 5.40e0 (3.10e1) 9.14e0 (2.18e1) 5.70e0 (2.53e1) 5.35e0 (3.05e1) 8.91e0 (2.18e1) 5.65e0 (2.52e1) 5.31e0 (3.01e1) 8.70e0 (2.18e1) 5.62e0 (2.51e1) 5.28e0 (2.97e1) 8.51e0 (2.18e1) 5.59e0 (2.50e1) 5.25e0 (2.94e1) 8.32e0 (2.17e1) 5.57e0 (2.49e1) 5.22e0 (2.90e1) e1 (7.76e0) , e0 (6.93e0) 1, e0 (1.10e1) 1.49e1 (7.70e0) 5.27e0 (6.87e0) 4.48e0 (1.08e1) 1.40e1 (7.64e0) 5.09e0 (6.82e0) 4.40e0 (1.06e1) 1.32e1 (7.60e0) 4.97e0 (6.78e0) 4.34e0 (1.05e1) 1.26e1 (7.57e0) 4.89e0 (6.75e0) 4.28e0 (1.04e1) 1.20e1 (7.54e0) 4.82e0 (6.71e0) 4.24e0 (1.03e1) 1.15e1 (7.52e0) 4.76e0 (6.68e0) 4.21e0 (1.02e1) 1.10e1 (7.50e0) 4.72e0 (6.67e0) 4.17e0 (1.01e1) e1 (6.58e0) 80 1, e0 (6.14e0) 1, e0 (8.95e0) 1.45e1 (6.55e0) 5.81e0 (6.06e0) 4.64e0 (8.80e0) 1.36e1 (6.50e0) 5.50e0 (6.00e0) 4.55e0 (8.68e0) 1.29e1 (6.46e0) 5.31e0 (5.96e0) 4.48e0 (8.57e0) 1.24e1 (6.40e0) 5.19e0 (5.92e0) 4.42e0 (8.49e0) 1.19e1 (6.35e0) 5.10e0 (5.89e0) 4.38e0 (8.41e0) 1.15e1 (6.31e0) 5.03e0 (5.86e0) 4.34e0 (8.35e0) 1.12e1 (6.28e0) 4.97e0 (5.83e0) 4.31e0 (8.28e0)

16 210 Appendix B: Ion Implantation Lookup Tables Table B.6 Look-up table for Rs ( / ) for arsenic ion implantation Dose (cm 2 ) Energy (kev) Temp. ( C) e3 (1.04e4) 20 1, e3 (9.61e3) 1, e2 (7.13e3) Time (min) e3 (9.95e3) 1.13e3 (9.06e3) 7.17e2 (6.87e3) 1.50e3 (9.58e3) 1.08e3 (8.68e3) 6.74e2 (6.69e3) 1.47e3 (9.28e3) 1.04e3 (8.41e3) 6.42e2 (6.56e3) 1.45e3 (9.03e3) 1.01e3 (8.19e3) 6.18e2 (6.47e3) 1.43e3 (8.81e3) 9.84e2 (8.02e3) 5.98e2 (6.39e3) 1.42e3 (8.62e3) 9.61e2 (7.86e3) 5.81e2 (6.33e3) 1.40e3 (8.46e3) 9.41e2 (7.72e3) 5.67e2 (6.28e3) e2 (1.43e3) , e2 (1.02e3) 1, e2 (8.29e2) 3.55e2 (1.39e3) 2.95e2 (9.81e2) 2.26e2 (7.75e2) 3.48e2 (1.36e3) 2.88e2 (9.50e2) 2.16e2 (7.35e2) 3.44e2 (1.33e3) 2.82e2 (9.24e2) 2.08e2 (7.05e2) 3.41e2 (1.31e3) 2.77e2 (9.03e2) 2.02e2 (6.81e2) 3.38e2 (1.29e3) 2.73e2 (8.84e2) 1.97e2 (6.61e2) 3.35e2 (1.27e3) 2.69e2 (8.68e2) 1.92e2 (6.44e2) 3.33e2 (1.26e3) 2.66e2 (8.53e2) 1.89e2 (6.29e2) e2 (8.71e2) 80 1, e2 (5.85e2) 1, e2 (4.90e2) 3.21e2 (8.46e2) 2.89e2 (5.68e2) 2.29e2 (4.62e2) 3.17e2 (8.29e2) 2.84e2 (5.55e2) 2.19e2 (4.40e2) 3.15e2 (8.18e2) 2.79e2 (5.43e2) 2.11e2 (4.24e2) 3.14e2 (8.10e2) 2.75e2 (5.34e2) 2.05e2 (4.11e2) 3.13e2 (8.04e2) 2.72e2 (5.25e2) 2.00e2 (3.99e2) 3.12e2 (7.98e2) 2.69e2 (5.17e2) 1.96e2 (3.89e2) 3.11e2 (7.93e2) 2.66e2 (5.10e2) 1.92e2 (3.81e2) e2 (2.28e3) 20 1, e2 (2.57e3) 1, e2 (1.91e3) 2.54e2 (2.21e3) 1.93e2 (2.42e3) 1.52e2 (1.78e3) 2.44e2 (2.16e3) 1.88e2 (2.30e3) 1.46e2 (1.69e3) 2.37e2 (2.12e3) 1.84e2 (2.22e3) 1.41e2 (1.63e3) 2.32e2 (2.09e3) 1.82e2 (2.15e3) 1.38e2 (1.58e3) 2.29e2 (2.06e3) 1.79e2 (2.09e3) 1.35e2 (1.53e3) 2.26e2 (2.04e3) 1.77e2 (2.04e3) 1.32e2 (1.50e3) 2.23e2 (2.02e3) 1.75e2 (2.00e3) 1.30e2 (1.47e3) e2 (3.29e2) 9.49e1 (3.22e2) 8.92e1 (3.16e2) 8.47e1 (3.12e2) 8.10e1 (3.08e2) 7.79e1 (3.05e2) 7.54e1 (3.02e2) 7.31e1 (3.00e2) (continued)

17 Appendix B: Ion Implantation Lookup Tables 211 Table B.6 (continued) Dose (cm 2 ) Energy (kev) Temp. ( C) , e1 (2.36e2) 1, e1 (2.19e2) Time (min) e1 (2.30e2) 3.74e1 (2.09e2) 4.61e1 (2.25e2) 3.64e1 (2.01e2) 4.47e1 (2.21e2) 3.57e1 (1.95e2) 4.38e1 (2.18e2) 3.51e1 (1.89e2) 4.30e1 (2.14e2) 3.46e1 (1.85e2) 4.23e1 (2.12e2) 3.42e1 (1.81e2) 4.18e1 (2.09e2) 3.38e1 (1.78e2) e1 (1.87e2) 80 1, e1 (1.24e2) 1, e1 (1.26e2) 8.24e1 (1.81e2) 4.88e1 (1.21e2) 3.85e1 (1.21e2) 7.87e1 (1.76e2) 4.71e1 (1.19e2) 3.75e1 (1.18e2) 7.59e1 (1.72e2) 4.58e1 (1.17e2) 3.68e1 (1.15e2) 7.36e1 (1.69e2) 4.49e1 (1.15e2) 3.62e1 (1.12e2) 7.15e1 (1.66e2) 4.41e1 (1.14e2) 3.57e1 (1.10e2) 6.98e1 (1.64e2) 4.35e1 (1.13e2) 3.52e1 (1.08e2) 6.82e1 (1.62e2) 4.30e1 (1.12e2) 3.48e1 (1.07e2) e1 (4.35e2) 20 1, e1 (4.47e2) 1, e1 (3.92e2) 7.06e1 (4.24e2) 3.44e1 (4.32e2) 2.42e1 (3.69e2) 6.77e1 (4.15e2) 3.24e1 (4.19e2) 2.35e1 (3.52e2) 6.51e1 (4.08e2) 3.10e1 (4.09e2) 2.30e1 (3.39e2) 6.28e1 (4.03e2) 3.00e1 (4.01e2) 2.26e1 (3.28e2) 6.07e1 (3.98e2) 2.92e1 (3.93e2) 2.23e1 (3.19e2) 5.88e1 (3.94e2) 2.86e1 (3.87e2) 2.20e1 (3.12e2) 5.73e1 (3.90e2) 2.81e1 (3.81e2) 2.18e1 (3.05e2) e1 (5.45e1) , e1 (3.14e1) 1, e0 (2.98e1) 3.92e1 (5.36e1) 1.90e1 (2.90e1) 7.90e0 (2.89e1) 3.82e1 (5.24e1) 1.71e1 (2.73e1) 7.24e0 (2.83e1) 3.72e1 (5.11e1) 1.58e1 (2.62e1) 6.82e0 (2.78e1) 3.62e1 (4.98e1) 1.48e1 (2.53e1) 6.50e0 (2.74e1) 3.53e1 (4.87e1) 1.40e1 (2.46e1) 6.27e0 (2.70e1) 3.45e1 (4.77e1) 1.33e1 (2.40e1) 6.08e0 (2.67e1) 3.37e1 (4.67e1) 1.28e1 (2.35e1) 5.92e0 (2.65e1) e1 (4.05e1) 80 1, e1 (2.56e1) 1, e0 (1.85e1) 4.20e1 (4.04e1) 1.89e1 (2.33e1) 7.96e0 (1.78e1) 4.02e1 (3.98e1) 1.71e1 (2.16e1) 7.33e0 (1.73e1) 3.88e1 (3.91e1) 1.58e1 (2.05e1) 6.90e0 (1.70e1) 3.75e1 (3.84e1) 1.48e1 (1.95e1) 6.59e0 (1.67e1) 3.64e1 (3.77e1) 1.40e1 (1.88e1) 6.35e0 (1.65e1) 3.54e1 (3.70e1) 1.33e1 (1.82e1) 6.16e0 (1.63e1) 3.45e1 (3.64e1) 1.28e1 (1.77e1) 6.01e0 (1.61e1)

18 212 Appendix B: Ion Implantation Lookup Tables Table B.7 Look-up table for N z ef f (µm 2 ) for boron ion implantation Dose (cm 2 ) Energy (kev) Temp. ( C) e5 (4.44e5) 20 1, e6 (4.49e5) 1, e6 (5.06e5) Time (min) e5 (4.43e5) 1.27e6 (4.47e5) 1.57e6 (5.08e5) 9.20e5 (4.41e5) 1.31e6 (4.46e5) 1.60e6 (5.11e5) 9.33e5 (4.40e5) 1.33e6 (4.44e5) 1.62e6 (5.14e5) 9.45e5 (4.39e5) 1.36e6 (4.42e5) 1.63e6 (5.17e5) 9.56e5 (4.38e5) 1.38e6 (4.41e5) 1.65e6 (5.20e5) 9.65e5 (4.37e5) 1.39e6 (4.40e5) 1.66e6 (5.22e5) 9.74e5 (4.36e5) 1.41e6 (4.39e5) 1.66e6 (5.24e5) e6 (9.01e5) , e6 (8.49e5) 1, e6 (8.26e5) 1.37e6 (8.99e5) 1.49e6 (8.45e5) 1.62e6 (8.30e5) 1.37e6 (8.98e5) 1.50e6 (8.41e5) 1.64e6 (8.31e5) 1.37e6 (8.96e5) 1.51e6 (8.38e5) 1.65e6 (8.34e5) 1.37e6 (8.95e5) 1.52e6 (8.36e5) 1.66e6 (8.35e5) 1.37e6 (8.93e5) 1.52e6 (8.33e5) 1.67e6 (8.38e5) 1.37e6 (8.91e5) 1.53e6 (8.30e5) 1.68e6 (8.41e5) 1.37e6 (8.90e5) 1.53e6 (8.28e5) 1.69e6 (8.43e5) e6 (1.15e6) 80 1, e6 (1.08e6) 1, e6 (1.02e6) 1.58e6 (1.14e6) 1.62e6 (1.08e6) 1.68e6 (1.02e6) 1.57e6 (1.14e6) 1.62e6 (1.07e6) 1.68e6 (1.02e6) 1.57e6 (1.14e6) 1.62e6 (1.07e6) 1.69e6 (1.02e6) 1.57e6 (1.14e6) 1.63e6 (1.07e6) 1.69e6 (1.03e6) 1.57e6 (1.14e6) 1.63e6 (1.06e6) 1.70e6 (1.03e6) 1.57e6 (1.14e6) 1.63e6 (1.06e6) 1.71e6 (1.03e6) 1.57e6 (1.14e6) 1.63e6 (1.06e6) 1.71e6 (1.03e6) e7 (3.39e6) 20 1, e7 (6.00e6) 1, e7 (6.97e6) 1.16e7 (3.38e6) 1.59e7 (5.98e6) 1.75e7 (6.98e6) 1.20e7 (3.36e6) 1.62e7 (5.95e6) 1.76e7 (6.99e6) 1.21e7 (3.35e6) 1.64e7 (5.93e6) 1.76e7 (7.00e6) 1.19e7 (3.33e6) 1.65e7 (5.92e6) 1.77e7 (7.02e6) 1.19e7 (3.32e6) 1.67e7 (5.91e6) 1.77e7 (7.04e6) 1.19e7 (3.31e6) 1.68e7 (5.91e6) 1.77e7 (7.06e6) 1.19e7 (3.29e6) 1.69e7 (5.90e6) 1.77e7 (7.07e6) e7 (7.38e6) 1.38e7 (7.36e6) 1.38e7 (7.33e6) 1.37e7 (7.31e6) 1.36e7 (7.29e6) 1.36e7 (7.27e6) 1.36e7 (7.25e6) 1.36e7 (7.23e6) (continued)

19 Appendix B: Ion Implantation Lookup Tables 213 Table B.7 (continued) Dose (cm 2 ) Energy (kev) Temp. ( C) , e7 (8.02e6) 1, e7 (8.65e6) Time (min) e7 (8.00e6) 1.71e7 (8.66e6) 1.56e7 (7.98e6) 1.72e7 (8.67e6) 1.58e7 (7.96e6) 1.73e7 (8.69e6) 1.59e7 (7.96e6) 1.73e7 (8.70e6) 1.61e7 (7.95e6) 1.73e7 (8.71e6) 1.62e7 (7.94e6) 1.74e7 (8.72e6) 1.63e7 (7.94e6) 1.74e7 (8.73e6) e7 (9.41e6) 80 1, e7 (9.64e6) 1, e7 (9.90e6) 1.43e7 (9.39e6) 1.58e7 (9.60e6) 1.71e7 (9.91e6) 1.43e7 (9.37e6) 1.60e7 (9.57e6) 1.73e7 (9.91e6) 1.43e7 (9.35e6) 1.61e7 (9.55e6) 1.73e7 (9.92e6) 1.43e7 (9.33e6) 1.62e7 (9.53e6) 1.74e7 (9.93e6) 1.43e7 (9.31e6) 1.63e7 (9.52e6) 1.75e7 (9.95e6) 1.44e7 (9.29e6) 1.64e7 (9.51e6) 1.75e7 (9.96e6) 1.44e7 (9.27e6) 1.64e7 (9.50e6) 1.75e7 (9.96e6) e7 (1.74e7) 20 1, e7 (5.45e7) 1, e8 (9.26e7) 1.83e7 (1.81e7) 6.65e7 (5.64e7) 1.76e8 (9.34e7) 1.93e7 (1.88e7) 7.53e7 (5.78e7) 1.77e8 (9.39e7) 2.03e7 (1.94e7) 8.31e7 (5.90e7) 1.78e8 (9.43e7) 2.11e7 (2.00e7) 9.02e7 (5.98e7) 1.78e8 (9.46e7) 2.19e7 (2.04e7) 9.67e7 (6.05e7) 1.78e8 (9.49e7) 2.27e7 (2.07e7) 1.03e8 (6.10e7) 1.79e8 (9.51e7) 2.34e7 (2.10e7) 1.07e8 (6.15e7) 1.79e8 (9.53e7) e7 (2.63e7) , e7 (7.79e7) 1, e8 (1.14e8) 2.97e7 (2.67e7) 8.44e7 (8.54e7) 1.84e8 (1.15e8) 3.05e7 (2.70e7) 9.30e7 (9.24e7) 1.85e8 (1.16e8) 3.12e7 (2.74e7) 1.00e8 (9.84e7) 1.86e8 (1.17e8) 3.19e7 (2.78e7) 1.07e8 (1.04e8) 1.86e8 (1.17e8) 3.26e7 (2.82e7) 1.13e8 (1.10e8) 1.86e8 (1.17e8) 3.33e7 (2.85e7) 1.19e8 (1.15e8) 1.87e8 (1.18e8) 3.39e7 (2.89e7) 1.24e8 (1.17e8) 1.87e8 (1.18e8) e7 (3.77e7) 80 1, e7 (8.97e7) 1, e8 (1.24e8) 4.30e7 (3.71e7) 1.02e8 (9.86e7) 1.87e8 (1.25e8) 4.39e7 (3.69e7) 1.10e8 (1.06e8) 1.88e8 (1.26e8) 4.47e7 (3.70e7) 1.17e8 (1.14e8) 1.88e8 (1.27e8) 4.54e7 (3.72e7) 1.24e8 (1.19e8) 1.89e8 (1.27e8) 4.59e7 (3.74e7) 1.31e8 (1.24e8) 1.89e8 (1.27e8) 4.65e7 (3.76e7) 1.36e8 (1.29e8) 1.89e8 (1.28e8) 4.71e7 (3.79e7) 1.41e8 (1.32e8) 1.89e8 (1.28e8)

20 214 Appendix B: Ion Implantation Lookup Tables Table B.8 Look-up table for N z ef f (µm 2 ) for phosphorus ion implantation Dose (cm 2 ) Energy (kev) Temp. ( C) e6 (3.01e5) 20 1, e6 (1.63e5) 1, e6 (1.02e5) Time (min) e6 (3.04e5) 1.26e6 (1.64e5) 1.25e6 (1.02e5) 1.16e6 (3.07e5) 1.26e6 (1.65e5) 1.26e6 (1.02e5) 1.18e6 (3.08e5) 1.26e6 (1.65e5) 1.26e6 (1.03e5) 1.19e6 (3.09e5) 1.26e6 (1.66e5) 1.26e6 (1.03e5) 1.20e6 (3.10e5) 1.25e6 (1.66e5) 1.27e6 (1.03e5) 1.21e6 (3.11e5) 1.25e6 (1.67e5) 1.27e6 (1.03e5) 1.21e6 (3.12e5) 1.26e6 (1.67e5) 1.27e6 (1.03e5) e6 (9.41e5) , e6 (7.84e5) 1, e6 (5.14e5) 1.45e6 (9.46e5) 1.66e6 (7.87e5) 1.71e6 (5.17e5) 1.48e6 (9.50e5) 1.68e6 (7.90e5) 1.72e6 (5.20e5) 1.50e6 (9.53e5) 1.69e6 (7.91e5) 1.72e6 (5.23e5) 1.51e6 (9.55e5) 1.70e6 (7.93e5) 1.72e6 (5.25e5) 1.52e6 (9.58e5) 1.71e6 (7.95e5) 1.73e6 (5.27e5) 1.53e6 (9.60e5) 1.71e6 (7.97e5) 1.73e6 (5.28e5) 1.54e6 (9.61e5) 1.71e6 (7.98e5) 1.73e6 (5.29e5) e6 (1.11e6) 80 1, e6 (1.08e6) 1, e6 (8.07e5) 1.46e6 (1.11e6) 1.57e6 (1.09e6) 1.66e6 (8.11e5) 1.48e6 (1.12e6) 1.59e6 (1.09e6) 1.66e6 (8.15e5) 1.49e6 (1.12e6) 1.60e6 (1.09e6) 1.66e6 (8.19e5) 1.49e6 (1.12e6) 1.61e6 (1.09e6) 1.67e6 (8.22e5) 1.50e6 (1.12e6) 1.62e6 (1.10e6) 1.67e6 (8.24e5) 1.50e6 (1.13e6) 1.63e6 (1.10e6) 1.67e6 (8.26e5) 1.50e6 (1.13e6) 1.63e6 (1.10e6) 1.68e6 (8.28e5) e7 (2.52e6) 20 1, e7 (1.45e6) 1, e7 (8.44e5) 1.28e7 (2.53e6) 1.38e7 (1.45e6) 1.37e7 (8.49e5) 1.31e7 (2.54e6) 1.38e7 (1.46e6) 1.36e7 (8.54e5) 1.31e7 (2.55e6) 1.39e7 (1.46e6) 1.35e7 (8.57e5) 1.32e7 (2.55e6) 1.39e7 (1.46e6) 1.35e7 (8.60e5) 1.32e7 (2.55e6) 1.39e7 (1.47e6) 1.34e7 (8.64e5) 1.33e7 (2.56e6) 1.39e7 (1.47e6) 1.34e7 (8.67e5) 1.33e7 (2.56e6) 1.39e7 (1.47e6) 1.33e7 (8.69e5) e7 (8.26e6) 1.72e7 (8.28e6) 1.76e7 (8.29e6) 1.78e7 (8.30e6) 1.79e7 (8.31e6) 1.80e7 (8.32e6) 1.81e7 (8.32e6) 1.81e7 (8.33e6) (continued)

21 Appendix B: Ion Implantation Lookup Tables 215 Table B.8 (continued) Dose (cm 2 ) Energy (kev) Temp. ( C) , e7 (8.34e6) 1, e7 (4.40e6) Time (min) e7 (8.34e6) 1.85e7 (4.40e6) 1.89e7 (8.34e6) 1.83e7 (4.40e6) 1.89e7 (8.34e6) 1.82e7 (4.40e6) 1.89e7 (8.33e6) 1.82e7 (4.40e6) 1.89e7 (8.33e6) 1.81e7 (4.41e6) 1.89e7 (8.32e6) 1.80e7 (4.41e6) 1.88e7 (8.32e6) 1.80e7 (4.41e6) e7 (1.07e7) 80 1, e7 (1.19e7) 1, e7 (7.10e6) 1.61e7 (1.07e7) 1.80e7 (1.19e7) 1.78e7 (7.10e6) 1.65e7 (1.08e7) 1.81e7 (1.19e7) 1.77e7 (7.08e6) 1.67e7 (1.08e7) 1.81e7 (1.19e7) 1.76e7 (7.08e6) 1.69e7 (1.08e7) 1.82e7 (1.19e7) 1.75e7 (7.07e6) 1.70e7 (1.08e7) 1.82e7 (1.19e7) 1.75e7 (7.07e6) 1.71e7 (1.08e7) 1.82e7 (1.19e7) 1.74e7 (7.07e6) 1.71e7 (1.08e7) 1.82e7 (1.19e7) 1.73e7 (7.06e6) e7 (2.64e7) 20 1, e8 (2.71e7) 1, e8 (1.71e7) 6.49e7 (2.65e7) 1.34e8 (2.71e7) 1.42e8 (1.70e7) 6.68e7 (2.65e7) 1.35e8 (2.71e7) 1.42e8 (1.69e7) 6.88e7 (2.66e7) 1.36e8 (2.72e7) 1.43e8 (1.69e7) 7.09e7 (2.66e7) 1.37e8 (2.72e7) 1.43e8 (1.69e7) 7.30e7 (2.66e7) 1.37e8 (2.72e7) 1.43e8 (1.68e7) 7.51e7 (2.66e7) 1.38e8 (2.72e7) 1.44e8 (1.68e7) 7.73e7 (2.67e7) 1.38e8 (2.72e7) 1.44e8 (1.68e7) e7 (8.78e7) , e8 (1.18e8) 1, e8 (6.90e7) 5.30e7 (8.87e7) 1.81e8 (1.19e8) 1.98e8 (6.88e7) 5.64e7 (8.93e7) 1.85e8 (1.19e8) 1.98e8 (6.86e7) 5.95e7 (9.00e7) 1.88e8 (1.19e8) 1.98e8 (6.84e7) 6.25e7 (9.06e7) 1.89e8 (1.20e8) 1.98e8 (6.83e7) 6.54e7 (9.09e7) 1.90e8 (1.20e8) 1.98e8 (6.81e7) 6.82e7 (9.12e7) 1.91e8 (1.20e8) 1.98e8 (6.80e7) 7.09e7 (9.14e7) 1.92e8 (1.20e8) 1.98e8 (6.78e7) e7 (1.10e8) 80 1, e8 (1.38e8) 1, e8 (8.81e7) 6.80e7 (1.11e8) 1.73e8 (1.39e8) 1.92e8 (8.78e7) 7.15e7 (1.12e8) 1.79e8 (1.40e8) 1.92e8 (8.76e7) 7.35e7 (1.13e8) 1.83e8 (1.40e8) 1.92e8 (8.74e7) 7.50e7 (1.14e8) 1.84e8 (1.40e8) 1.92e8 (8.72e7) 7.64e7 (1.15e8) 1.86e8 (1.41e8) 1.91e8 (8.70e7) 7.81e7 (1.16e8) 1.86e8 (1.41e8) 1.91e8 (8.68e7) 7.97e7 (1.17e8) 1.87e8 (1.41e8) 1.91e8 (8.67e7)

22 216 Appendix B: Ion Implantation Lookup Tables Table B.9 Look-up table for N z ef f (µm 2 ) for arsenic ion implantation Dose (cm 2 ) Energy (kev) Temp. ( C) e5 (1.38e4) 20 1, e5 (1.03e4) 1, e5 (1.00e4) Time (min) e5 (1.46e4) 2.94e5 (1.06e4) 3.12e5 (1.00e4) 2.52e5 (1.52e4) 2.96e5 (1.08e4) 3.14e5 (1.00e4) 2.57e5 (1.57e4) 2.98e5 (1.09e4) 3.16e5 (9.98e3) 2.61e5 (1.62e4) 2.99e5 (1.10e4) 3.17e5 (9.96e3) 2.65e5 (1.65e4) 3.01e5 (1.11e4) 3.18e5 (9.93e3) 2.68e5 (1.69e4) 3.02e5 (1.11e4) 3.19e5 (9.91e3) 2.70e5 (1.72e4) 3.03e5 (1.12e4) 3.20e5 (9.87e3) e6 (2.09e5) , e6 (2.93e5) 1, e6 (2.51e5) 1.44e6 (2.19e5) 1.81e6 (3.05e5) 1.89e6 (2.55e5) 1.48e6 (2.27e5) 1.84e6 (3.13e5) 1.88e6 (2.57e5) 1.51e6 (2.34e5) 1.87e6 (3.19e5) 1.87e6 (2.59e5) 1.53e6 (2.40e5) 1.88e6 (3.23e5) 1.87e6 (2.60e5) 1.55e6 (2.45e5) 1.90e6 (3.27e5) 1.87e6 (2.61e5) 1.56e6 (2.50e5) 1.91e6 (3.30e5) 1.87e6 (2.62e5) 1.58e6 (2.54e5) 1.91e6 (3.32e5) 1.86e6 (2.63e5) e6 (3.48e5) 80 1, e6 (5.92e5) 1, e6 (5.64e5) 1.36e6 (3.66e5) 1.59e6 (6.13e5) 1.80e6 (5.74e5) 1.39e6 (3.78e5) 1.62e6 (6.28e5) 1.80e6 (5.80e5) 1.40e6 (3.87e5) 1.65e6 (6.40e5) 1.81e6 (5.84e5) 1.41e6 (3.93e5) 1.67e6 (6.50e5) 1.80e6 (5.86e5) 1.42e6 (3.98e5) 1.69e6 (6.59e5) 1.81e6 (5.89e5) 1.43e6 (4.02e5) 1.71e6 (6.66e5) 1.80e6 (5.91e5) 1.43e6 (4.05e5) 1.72e6 (6.73e5) 1.80e6 (5.93e5) e6 (1.44e5) 20 1, e6 (8.07e4) 1, e6 (6.74e4) 3.01e6 (1.50e5) 3.55e6 (8.37e4) 3.37e6 (6.82e4) 3.12e6 (1.53e5) 3.55e6 (8.57e4) 3.35e6 (6.87e4) 3.21e6 (1.55e5) 3.55e6 (8.70e4) 3.33e6 (6.90e4) 3.27e6 (1.57e5) 3.54e6 (8.80e4) 3.32e6 (6.94e4) 3.31e6 (1.58e5) 3.53e6 (8.87e4) 3.30e6 (6.96e4) 3.34e6 (1.60e5) 3.52e6 (8.93e4) 3.29e6 (6.97e4) 3.37e6 (1.61e5) 3.51e6 (8.98e4) 3.29e6 (6.99e4) e6 (2.13e6) 9.60e6 (2.18e6) 1.04e7 (2.21e6) 1.10e7 (2.24e6) 1.16e7 (2.26e6) 1.22e7 (2.27e6) 1.26e7 (2.29e6) 1.31e7 (2.30e6) (continued)

23 Appendix B: Ion Implantation Lookup Tables 217 Table B.9 (continued) Dose (cm 2 ) Energy (kev) Temp. ( C) , e7 (2.67e6) 1, e7 (2.02e6) Time (min) e7 (2.70e6) 2.10e7 (2.01e6) 2.01e7 (2.71e6) 2.10e7 (2.01e6) 2.04e7 (2.72e6) 2.09e7 (2.01e6) 2.06e7 (2.72e6) 2.09e7 (2.00e6) 2.07e7 (2.72e6) 2.08e7 (2.00e6) 2.08e7 (2.72e6) 2.08e7 (2.00e6) 2.09e7 (2.72e6) 2.07e7 (2.00e6) e6 (4.01e6) 80 1, e7 (5.85e6) 1, e7 (4.38e6) 1.04e7 (4.15e6) 1.85e7 (5.93e6) 2.02e7 (4.36e6) 1.11e7 (4.26e6) 1.90e7 (5.97e6) 2.02e7 (4.35e6) 1.16e7 (4.36e6) 1.93e7 (6.00e6) 2.01e7 (4.33e6) 1.20e7 (4.45e6) 1.95e7 (6.03e6) 2.01e7 (4.32e6) 1.25e7 (4.52e6) 1.97e7 (6.05e6) 2.00e7 (4.30e6) 1.28e7 (4.58e6) 1.98e7 (6.06e6) 1.99e7 (4.30e6) 1.32e7 (4.63e6) 1.99e7 (6.06e6) 1.99e7 (4.28e6) e7 (1.73e6) 20 1, e7 (1.21e6) 1, e7 (8.46e5) 1.58e7 (1.75e6) 3.02e7 (1.21e6) 3.58e7 (8.50e5) 1.64e7 (1.76e6) 3.14e7 (1.21e6) 3.59e7 (8.51e5) 1.70e7 (1.77e6) 3.22e7 (1.20e6) 3.60e7 (8.53e5) 1.76e7 (1.77e6) 3.28e7 (1.20e6) 3.60e7 (8.54e5) 1.82e7 (1.78e6) 3.33e7 (1.20e6) 3.59e7 (8.55e5) 1.87e7 (1.78e6) 3.37e7 (1.20e6) 3.59e7 (8.56e5) 1.92e7 (1.78e6) 3.40e7 (1.20e6) 3.59e7 (8.57e5) e7 (2.18e7) , e7 (3.48e7) 1, e8 (2.81e7) 3.26e7 (2.16e7) 7.00e7 (3.68e7) 1.47e8 (2.81e7) 3.32e7 (2.20e7) 7.69e7 (3.84e7) 1.57e8 (2.81e7) 3.41e7 (2.24e7) 8.24e7 (3.94e7) 1.63e8 (2.81e7) 3.50e7 (2.29e7) 8.73e7 (4.03e7) 1.68e8 (2.80e7) 3.59e7 (2.34e7) 9.16e7 (4.09e7) 1.72e8 (2.80e7) 3.68e7 (2.38e7) 9.51e7 (4.15e7) 1.76e8 (2.80e7) 3.76e7 (2.43e7) 9.86e7 (4.19e7) 1.79e8 (2.79e7) e7 (3.03e7) 80 1, e7 (4.51e7) 1, e8 (5.00e7) 2.79e7 (2.95e7) 6.89e7 (4.90e7) 1.46e8 (5.06e7) 2.93e7 (2.96e7) 7.57e7 (5.20e7) 1.54e8 (5.09e7) 3.07e7 (3.00e7) 8.15e7 (5.44e7) 1.61e8 (5.12e7) 3.19e7 (3.06e7) 8.64e7 (5.63e7) 1.66e8 (5.13e7) 3.30e7 (3.11e7) 9.06e7 (5.79e7) 1.70e8 (5.14e7) 3.40e7 (3.16e7) 9.44e7 (5.93e7) 1.73e8 (5.14e7) 3.50e7 (3.22e7) 9.79e7 (6.04e7) 1.75e8 (5.15e7)

24 218 Appendix B: Ion Implantation Lookup Tables Table B.10 Look-up table for t j (µm) for boron ion implantation Dose (cm 2 ) Energy (kev) Temp. ( C) Time (min) (0.74) 0.59(0.74) 0.59(0.74) 0.59(0.74) 0.60(0.75) 0.60(0.75) 0.61(0.75) 0.61(0.75) 20 1, (0.94) 0.70(0.96) 0.74(0.99) 0.77(1.01) 0.80(1.03) 0.83(1.05) 0.86(1.07) 0.89(1.09) 1, (1.57) 1.29(1.69) 1.46(1.80) 1.60(1.90) 1.73(2.00) 1.86(2.08) 1.97(2.17) 2.07(2.25) (1.08) 0.99(1.08) 1.00(1.08) 1.00(1.08) 1.00(1.09) 1.00(1.09) 1.00(1.09) 1.01(1.09) , (1.22) 1.04(1.24) 1.06(1.26) 1.09(1.28) 1.12(1.30) 1.14(1.31) 1.16(1.33) 1.19(1.35) 1, (1.78) 1.53(1.89) 1.67(2.00) 1.80(2.10) 1.92(2.19) 2.03(2.28) 2.13(2.37) 2.23(2.45) (1.28) 1.21(1.29) 1.21(1.29) 1.22(1.29) 1.22(1.29) 1.22(1.29) 1.22(1.29) 1.22(1.29) 80 1, (1.39) 1.23(1.41) 1.25(1.43) 1.27(1.45) 1.30(1.46) 1.32(1.48) 1.34(1.50) 1.36(1.51) 1, (1.92) 1.68(2.03) 1.82(2.13) 1.94(2.23) 2.06(2.32) 2.16(2.41) 2.26(2.49) 2.36(2.57) (0.75) 0.62(0.75) 0.64(0.76) 0.66(0.76) 0.68(0.76) 0.70(0.76) 0.71(0.77) 0.73(0.77) 20 1, (1.09) 0.88(1.12) 0.96(1.16) 1.02(1.19) 1.08(1.22) 1.14(1.25) 1.19(1.28) 1.24(1.31) 1, (1.92) 1.70(2.07) 1.92(2.21) 2.10(2.34) 2.27(2.46) 2.42(2.58) 2.56(2.68) 2.69(2.79) (1.51) 1.46(1.51) 1.47(1.51) 1.47(1.51) 1.47(1.52) 1.48(1.52) 1.48(1.52) 1.49(1.52) , (1.58) 1.49(1.60) 1.52(1.62) 1.55(1.64) 1.58(1.66) 1.60(1.67) 1.63(1.69) 1.65(1.71) 1, (2.13) 1.94(2.26) 2.10(2.39) 2.24(2.51) 2.39(2.62) 2.52(2.73) 2.65(2.84) 2.77(2.94) (1.95) 1.92(1.95) 1.92(1.95) 1.93(1.95) 1.93(1.95) 1.93(1.95) 1.94(1.95) 1.94(1.96) 80 1, (1.95) 1.87(1.96) 1.89(1.98) 1.92(2.00) 1.94(2.01) 1.96(2.03) 1.99(2.05) 2.01(2.06) 1, (2.41) 2.25(2.53) 2.39(2.64) 2.52(2.75) 2.63(2.86) 2.75(2.96) 2.86(3.05) 2.96(3.14) (1.16) 1.09(1.17) 1.11(1.19) 1.13(1.21) 1.14(1.22) 1.16(1.24) 1.18(1.25) 1.20(1.27) 20 1, (1.59) 1.52(1.69) 1.70(1.77) 1.86(1.85) 2.01(1.92) 2.15(1.98) 2.28(2.04) 2.40(2.10) 1, (2.67) 3.05(2.92) 3.35(3.14) 3.61(3.34) 3.84(3.52) 4.06(3.68) 4.25(3.84) 4.43(3.98) (1.86) 1.84(1.86) 1.85(1.87) 1.87(1.88) 1.88(1.88) 1.89(1.89) 1.90(1.90) 1.92(1.90) , (2.04) 2.03(2.13) 2.11(2.21) 2.20(2.30) 2.28(2.39) 2.37(2.49) 2.47(2.60) 2.58(2.69) 1, (2.85) 3.14(3.11) 3.44(3.34) 3.70(3.54) 3.94(3.73) 4.15(3.90) 4.35(4.06) 4.53(4.21) (2.76) 2.78(2.76) 2.79(2.77) 2.80(2.77) 2.80(2.77) 2.81(2.77) 2.82(2.78) 2.83(2.78) 80 1, (2.72) 2.76(2.79) 2.83(2.86) 2.89(2.92) 2.96(2.98) 3.02(3.04) 3.08(3.10) 3.14(3.15) 1, (3.14) 3.33(3.32) 3.57(3.52) 3.80(3.70) 4.03(3.88) 4.23(4.05) 4.42(4.20) 4.60(4.36)

25 Appendix B: Ion Implantation Lookup Tables 219 Table B.11 Look-up table for t j (µm) for phosphorus ion implantation Dose (cm 2 ) Energy (kev) Temp. ( C) Time (min) (0.45) 0.29(0.45) 0.29(0.45) 0.29(0.45) 0.30(0.46) 0.30(0.46) 0.30(0.46) 0.31(0.46) 20 1, (0.67) 0.43(0.68) 0.47(0.70) 0.51(0.72) 0.55(0.73) 0.59(0.75) 0.62(0.76) 0.65(0.78) 1, (1.17) 1.12(1.26) 1.29(1.33) 1.43(1.41) 1.55(1.48) 1.67(1.54) 1.77(1.61) 1.88(1.67) (0.58) 0.51(0.58) 0.51(0.58) 0.51(0.58) 0.51(0.59) 0.52(0.59) 0.52(0.59) 0.52(0.59) , (0.82) (0.86) 0.63(0.88) 0.66(0.90) 0.68(0.91) 0.71(0.93) 0.73(0.95) 1, (1.42) 1.18(1.52) 1.34(1.62) 1.48(1.71) 1.61(1.79) 1.73(1.87) 1.84(1.95) 1.94(2.02) (0.71) 0.66(0.71) 0.66(0.71) 0.67(0.71) 0.67(0.71) 0.67(0.71) 0.67(0.72) 0.67(0.72) 80 1, (0.91) 0.71(0.93) 0.73(0.94) 0.75(0.96) 0.77(0.98) 0.79(0.99) 0.81(1.01) 0.83(1.02) 1, (1.52) 1.22(1.62) 1.38(1.72) 1.51(1.81) 1.64(1.90) 1.75(1.98) 1.86(2.06) 1.96(2.14) (0.58) 0.90(0.59) 0.92(0.59) 0.93(0.59) 0.94(0.59) 0.95(0.60) 0.96(0.60) 0.96(0.60) 20 1, (0.82) (0.86) 0.93(0.88) 0.96(0.90) 0.99(0.92) 1.02(0.94) 1.04(0.96) 1, (1.48) 1.49(1.59) 1.68(1.69) 1.84(1.78) 1.99(1.87) 2.13(1.96) 2.25(2.04) 2.37(2.12) (0.96) 0.73(0.97) 0.77(0.97) 0.81(0.97) 0.84(0.97) 0.86(0.98) 0.88(0.98) 0.90(0.98) , (0.91) 0.80(0.94) 0.85(0.97) 0.89(0.99) 0.93(1.02) 0.97(1.04) 1.00(1.07) 1.04(1.09) 1, (1.73) 1.52(1.85) 1.72(1.97) 1.90(2.08) 2.05(2.18) 2.19(2.28) 2.32(2.37) 2.44(2.46) (1.07) 0.82(1.08) 0.83(1.08) 0.84(1.09) 0.84(1.09) 0.85(1.09) 0.86(1.09) 0.87(1.10) 80 1, (0.98) 0.89(1.01) 0.91(1.03) 0.94(1.06) 0.97(1.08) 0.99(1.11) 1.02(1.13) 1.05(1.16) 1, (1.80) 1.52(1.93) 1.72(2.05) 1.89(2.16) 2.04(2.27) 2.18(2.37) 2.31(2.47) 2.43(2.56) (2.53) 4.98(2.54) 4.98(2.54) 4.98(2.55) 4.98(2.55) 4.98(2.56) 4.98(2.56) 4.98(2.56) 20 1, (1.19) 4.59(1.22) 4.60(1.24) 4.61(1.27) 4.63(1.30) 4.65(1.32) 4.66(1.35) 4.68(1.37) 1, (1.89) 4.24(2.04) 4.32(2.17) 4.40(2.30) 4.49(2.42) 4.58(2.54) 4.69(2.64) 4.85(2.75) (4.23) 2.20(4.22) 2.31(4.24) 2.42(4.22) 2.52(4.19) 2.62(4.19) 2.71(4.19) 2.80(4.20) , (2.94) 2.93(2.95) 2.94(2.97) 2.97(2.99) 2.99(3.00) 3.01(3.01) 3.03(3.03) 3.05(3.04) 1, (2.03) 2.74(2.23) 2.90(2.41) 3.08(2.58) 3.24(2.73) 3.41(2.88) 3.56(3.01) 3.71(3.13) (4.19) 1.42(4.19) 1.56(4.21) 1.69(4.17) 1.81(4.22) 1.93(4.22) 2.03(4.20) 2.13(4.19) 80 1, (3.09) 2.31(3.11) 2.35(3.12) 2.39(3.14) 2.43(3.15) 2.46(3.17) 2.49(3.18) 2.52(3.20) 1, (2.09) 2.47(2.31) 2.72(2.50) 2.94(2.67) 3.13(2.83) 3.31(2.98) 3.48(3.12) 3.64(3.25)

26 220 Appendix B: Ion Implantation Lookup Tables Table B.12 Look-up table for t j (µm) for arsenic ion implantation Dose (cm 2 ) Energy (kev) Temp. ( C) Time (min) () 0.16() 0.16() 0.16() 0.16() 0.16() 0.16() 0.16() 20 1, () 0.17(0.13) 0.18(0.14) 0.19(0.14) 0.20(0.15) 0.21(0.15) 0.22(0.16) 0.23(0.17) 1, (0.27) 0.41(0.30) 0.46(0.34) 0.51(0.37) 0.56(0.39) 0.60(0.42) 0.64(0.44) 0.67(0.46) (0.25) 0.35(0.25) 0.35(0.25) 0.35(0.25) 0.35(0.25) 0.35(0.25) 0.35(0.25) 0.35(0.25) , (0.29) 0.35(0.29) 0.36(0.29) 0.36(0.30) 0.36(0.30) 0.36(0.30) 0.37(0.30) 0.37(0.31) 1, () 0.51(0.45) (0.55) 0.68(0.58) 0.73(0.62) (0.69) (0.41) 0.51(0.41) 0.51(0.41) 0.51(0.41) 0.51(0.41) 0.51(0.41) 0.51(0.41) 0.51(0.41) 80 1, (0.44) 0.52(0.44) 0.52(0.45) 0.52(0.45) 0.52(0.45) 0.52(0.45) 0.53(0.45) 0.53(0.45) 1, (0.51) 0.58(0.54) 0.62(0.58) 0.66(0.62) (0.69) 0.79(0.73) 0.83(0.76) (0.11) 0.19(0.11) 0.19(0.11) 0.19(0.11) 0.19(0.11) 0.19(0.11) 0.19(0.11) 0.19(0.11) 20 1, (0.15) 0.22(0.16) 0.24(0.17) (0.19) 0.30(0.20) 0.31(0.21) 1, (0.33) 0.53(0.38) 0.60(0.43) (0.53) 0.82(0.56) 0.86(0.59) (0.23) 0.39(0.23) 0.39(0.23) 0.39(0.23) 0.39(0.23) 0.39(0.23) 0.39(0.23) 0.39(0.23) , (0.31) (0.31) (0.31) (0.31) 0.41(0.32) 0.42(0.32) 0.44(0.32) 0.45(0.33) 1, (0.49) 0.72(0.56) 0.81(0.62) 0.89(0.67) 0.96(0.72) 1.02(0.76) (0.38) 0.55(0.38) 0.55(0.38) 0.55(0.38) 0.55(0.38) 0.55(0.38) 0.55(0.38) 0.55(0.38) 80 1, (0.44) 0.55(0.44) 0.55(0.45) 0.55(0.45) 0.55(0.45) 0.56(0.45) 0.56(0.45) 0.56(0.46) 1, (0.57) 0.73(0.63) 0.82(0.69) 0.90(0.75) (0.85) 1.08(0.89) 1.13(0.93) (0.08) 0.20(0.09) 0.20(0.09) 0.20(0.09) 0.20() 0.20() 0.20() 0.21(0.11) 20 1, (0.17) 0.33(0.19) 0.37(0.20) (0.22) 0.43(0.23) 0.45(0.24) (0.25) 0.50(0.26) 1, (0.43) (0.55) 0.99(0.60) (0.69) 1.20(0.73) 1.26(0.77) (0.29) 0.46(0.29) 0.46(0.29) 0.46(0.29) 0.46(0.29) 0.46(0.29) 0.46(0.29) 0.46(0.29) , (0.35) 0.47(0.38) (0.41) 0.51(0.44) 0.55() (0.53) 0.66(0.55) 1, (0.74) (0.93) 1.40(1.00) 1.51(1.07) 1.61(1.13) 1.71(1.18) 1.79(1.24) () 0.65() 0.65() 0.65() 0.65() 0.65() 0.65() 0.65() 80 1, (0.53) 0.66(0.53) 0.66(0.54) 0.66(0.54) 0.66(0.55) 0.66(0.57) 0.67(0.59) 0.68(0.61) 1, (0.85) 1.12(0.96) 1.26(1.05) 1.39(1.14) 1.51(1.21) 1.61(1.28) 1.70(1.34) 1.79(1.40)

Quiz #1 Practice Problem Set

Quiz #1 Practice Problem Set Name: Student Number: ELEC 3908 Physical Electronics Quiz #1 Practice Problem Set? Minutes January 22, 2016 - No aids except a non-programmable calculator - All questions must be answered - All questions

More information

A amplitude. k stiffness m mass δ phase angle x 0 initial displacement v 0 initial velocity T period f frequency. A amplitude. ω angular frequency

A amplitude. k stiffness m mass δ phase angle x 0 initial displacement v 0 initial velocity T period f frequency. A amplitude. ω angular frequency EF 152 Final Exam, Fall, 2011 Page 1 of 10 EF 152 Final Exam, Fall, 2011 Page 2 of 10 The equation sheets may be removed when the test begins Guidelines: Assume 3 significant figures for all given numbers

More information

Appendix 1: List of symbols

Appendix 1: List of symbols Appendix 1: List of symbols Symbol Description MKS Units a Acceleration m/s 2 a 0 Bohr radius m A Area m 2 A* Richardson constant m/s A C Collector area m 2 A E Emitter area m 2 b Bimolecular recombination

More information

Biosensors and Instrumentation: Tutorial 2

Biosensors and Instrumentation: Tutorial 2 Biosensors and Instrumentation: Tutorial 2. One of the most straightforward methods of monitoring temperature is to use the thermal variation of a resistor... Suggest a possible problem with the use of

More information

Midterm I - Solutions

Midterm I - Solutions UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Spring 2008 Professor Chenming Hu Midterm I - Solutions Name: SID: Grad/Undergrad: Closed

More information

MAS.836 PROBLEM SET THREE

MAS.836 PROBLEM SET THREE MAS.836 PROBLEM SET THREE FSR, Strain Gauge, and Piezo Circuits: The purpose of this problem set is to familiarize yourself with the most common forms of pressure and force measurement. The circuits you

More information

Make sure the exam paper has 9 pages (including cover page) + 3 pages of data for reference

Make sure the exam paper has 9 pages (including cover page) + 3 pages of data for reference UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences Spring 2006 EE143 Midterm Exam #1 Family Name First name SID Signature Make sure the exam paper

More information

SENSOR DEVICES MECHANICAL SENSORS

SENSOR DEVICES MECHANICAL SENSORS SENSOR DEVICES MECHANICAL SENSORS OUTLINE 4 Mechanical Sensors Introduction General mechanical properties Piezoresistivity Piezoresistive sensors Capacitive sensors Applications INTRODUCTION MECHANICAL

More information

Ion Implant Part 1. Saroj Kumar Patra, TFE4180 Semiconductor Manufacturing Technology. Norwegian University of Science and Technology ( NTNU )

Ion Implant Part 1. Saroj Kumar Patra, TFE4180 Semiconductor Manufacturing Technology. Norwegian University of Science and Technology ( NTNU ) 1 Ion Implant Part 1 Chapter 17: Semiconductor Manufacturing Technology by M. Quirk & J. Serda Spring Semester 2014 Saroj Kumar Patra,, Norwegian University of Science and Technology ( NTNU ) 2 Objectives

More information

UNITS AND DEFINITIONS RELATED TO BIOMECHANICAL AND ELECTROMYOGRAPHICAL MEASUREMENTS

UNITS AND DEFINITIONS RELATED TO BIOMECHANICAL AND ELECTROMYOGRAPHICAL MEASUREMENTS APPENDIX B UNITS AND DEFINITIONS RELATED TO BIOMECHANICAL AND ELECTROMYOGRAPHICAL MEASUREMENTS All units used are SI (Système International d Unités). The system is based on seven well-defined base units

More information

Piezo materials. Actuators Sensors Generators Transducers. Piezoelectric materials may be used to produce e.g.: Piezo materials Ver1404

Piezo materials. Actuators Sensors Generators Transducers. Piezoelectric materials may be used to produce e.g.:  Piezo materials Ver1404 Noliac Group develops and manufactures piezoelectric materials based on modified lead zirconate titanate (PZT) of high quality and tailored for custom specifications. Piezoelectric materials may be used

More information

Midterm 2 PROBLEM POINTS MAX

Midterm 2 PROBLEM POINTS MAX Midterm 2 PROBLEM POINTS MAX 1 30 2 24 3 15 4 45 5 36 1 Personally, I liked the University; they gave us money and facilities, we didn't have to produce anything. You've never been out of college. You

More information

ECE 442. Spring, Lecture -2

ECE 442. Spring, Lecture -2 ECE 442 Power Semiconductor Devices and Integrated circuits Spring, 2006 University of Illinois at Chicago Lecture -2 Semiconductor physics band structures and charge carriers 1. What are the types of

More information

SIMULATION AND OPTIMIZATION OF MEMS PIEZOELECTRIC ENERGY HARVESTER WITH A NON-TRADITIONAL GEOMETRY

SIMULATION AND OPTIMIZATION OF MEMS PIEZOELECTRIC ENERGY HARVESTER WITH A NON-TRADITIONAL GEOMETRY SIMULATION AND OPTIMIZATION OF MEMS PIEZOELECTRIC ENERGY HARVESTER WITH A NON-TRADITIONAL GEOMETRY S. Sunithamani 1, P. Lakshmi 1, E. Eba Flora 1 1 Department of EEE, College of Engineering, Anna University,

More information

Basic concepts in Magnetism; Units

Basic concepts in Magnetism; Units Basic concepts in Magnetism; Units J. M. D. Coey School of Physics and CRANN, Trinity College Dublin Ireland. 1. SI Units 2. cgs units 3. Conversions 4. Dimensions Comments and corrections please: jcoey@tcd.ie

More information

Modeling, Simulation and Optimization of the Mechanical Response of Micromechanical Silicon Cantilever: Application to Piezoresistive Force Sensor

Modeling, Simulation and Optimization of the Mechanical Response of Micromechanical Silicon Cantilever: Application to Piezoresistive Force Sensor Available online at www.sciencedirect.com ScienceDirect Physics Procedia 55 (2014 ) 348 355 Eight International Conference on Material Sciences (CSM8-ISM5) Modeling, Simulation and Optimization of the

More information

Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

More information

Design And Analysis of Microcantilevers Type Sensor With Different Shape of Piezoresistive Patch

Design And Analysis of Microcantilevers Type Sensor With Different Shape of Piezoresistive Patch Aakash Swami, Pulkit Agarwal 45 Design And Analysis of Microcantilevers Type Sensor With Different Shape of Piezoresistive Patch Aakash Swami and Pulkit Agarwal Student MNNIT Allahabad Email:aakashswami7@gmail.com

More information

Junction Diodes. Tim Sumner, Imperial College, Rm: 1009, x /18/2006

Junction Diodes. Tim Sumner, Imperial College, Rm: 1009, x /18/2006 Junction Diodes Most elementary solid state junction electronic devices. They conduct in one direction (almost correct). Useful when one converts from AC to DC (rectifier). But today diodes have a wide

More information

DIFFUSION - Chapter 7

DIFFUSION - Chapter 7 DIFFUSION - Chapter 7 Doping profiles determine many short-channel characteristics in MOS devices. Resistance impacts drive current. Scaling implies all lateral and vertical dimensions scale by the same

More information

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits Spring 2008 MIDTERM EXAMINATION #1 Time

More information

Outline. 4 Mechanical Sensors Introduction General Mechanical properties Piezoresistivity Piezoresistive Sensors Capacitive sensors Applications

Outline. 4 Mechanical Sensors Introduction General Mechanical properties Piezoresistivity Piezoresistive Sensors Capacitive sensors Applications Sensor devices Outline 4 Mechanical Sensors Introduction General Mechanical properties Piezoresistivity Piezoresistive Sensors Capacitive sensors Applications Introduction Two Major classes of mechanical

More information

DESIGN AND SIMULATION OF UNDER WATER ACOUSTIC MEMS SENSOR

DESIGN AND SIMULATION OF UNDER WATER ACOUSTIC MEMS SENSOR DESIGN AND SIMULATION OF UNDER WATER ACOUSTIC MEMS SENSOR Smitha G Prabhu 1, Nagabhushana S *2 1 Dept. Of Electronics and communication, Center for Nano Materials and MEMS, 2 Dept. of Electronics and Communication,

More information

Ion Implantation. alternative to diffusion for the introduction of dopants essentially a physical process, rather than chemical advantages:

Ion Implantation. alternative to diffusion for the introduction of dopants essentially a physical process, rather than chemical advantages: Ion Implantation alternative to diffusion for the introduction of dopants essentially a physical process, rather than chemical advantages: mass separation allows wide varies of dopants dose control: diffusion

More information

ECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed)

ECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed) ECE-342 Test 2 Solutions, Nov 4, 2008 6:00-8:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free

More information

Solved Problems. Electric Circuits & Components. 1-1 Write the KVL equation for the circuit shown.

Solved Problems. Electric Circuits & Components. 1-1 Write the KVL equation for the circuit shown. Solved Problems Electric Circuits & Components 1-1 Write the KVL equation for the circuit shown. 1-2 Write the KCL equation for the principal node shown. 1-2A In the DC circuit given in Fig. 1, find (i)

More information

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation

More information

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EECS 40 Spring 2000 Introduction to Microelectronic Devices Prof. King MIDTERM EXAMINATION

More information

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation

More information

INF5490 RF MEMS. LN03: Modeling, design and analysis. Spring 2008, Oddvar Søråsen Department of Informatics, UoO

INF5490 RF MEMS. LN03: Modeling, design and analysis. Spring 2008, Oddvar Søråsen Department of Informatics, UoO INF5490 RF MEMS LN03: Modeling, design and analysis Spring 2008, Oddvar Søråsen Department of Informatics, UoO 1 Today s lecture MEMS functional operation Transducer principles Sensor principles Methods

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006 UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm I Name: Closed book. One sheet of notes is allowed.

More information

UNIVERSITY OF BOLTON SCHOOL OF ENGINEERING MSC SYSTEMS ENGINEERING AND ENGINEERING MANAGEMENT SEMESTER 2 EXAMINATION 2015/20016

UNIVERSITY OF BOLTON SCHOOL OF ENGINEERING MSC SYSTEMS ENGINEERING AND ENGINEERING MANAGEMENT SEMESTER 2 EXAMINATION 2015/20016 TW63 UNIVERSITY OF BOLTON SCHOOL OF ENGINEERING MSC SYSTEMS ENGINEERING AND ENGINEERING MANAGEMENT SEMESTER 2 EXAMINATION 2015/20016 MONITORING OF MECHANICAL SYSTEMS MODULE NO: EEM7018 Date: Thursday 19

More information

MODELING OF T-SHAPED MICROCANTILEVER RESONATORS. Margarita Narducci, Eduard Figueras, Isabel Gràcia, Luis Fonseca, Joaquin Santander, Carles Cané

MODELING OF T-SHAPED MICROCANTILEVER RESONATORS. Margarita Narducci, Eduard Figueras, Isabel Gràcia, Luis Fonseca, Joaquin Santander, Carles Cané Stresa, Italy, 5-7 April 007 MODELING OF T-SHAPED MICROCANTILEVER RESONATORS Margarita Narducci, Eduard Figueras, Isabel Gràcia, Luis Fonseca, Joaquin Santander, Carles Centro Nacional de Microelectrónica

More information

Lecture 4 Pressure Sensing. ECE 5900/6900 Fundamentals of Sensor Design

Lecture 4 Pressure Sensing. ECE 5900/6900 Fundamentals of Sensor Design EE 4900: Fundamentals of Sensor Design 1 Lecture 4 Pressure Sensing Pressure Sensing Q: What are we measuring? A: elative Pressure or Gauge Pressure. Pressure is Force (F) per Unit Area (A); P=F/A 2 SI

More information

For the following statements, mark ( ) for true statement and (X) for wrong statement and correct it.

For the following statements, mark ( ) for true statement and (X) for wrong statement and correct it. Benha University Faculty of Engineering Shoubra Electrical Engineering Department First Year communications. Answer all the following questions Illustrate your answers with sketches when necessary. The

More information

Contactless Excitation of MEMS Resonant Sensors by Electromagnetic Driving

Contactless Excitation of MEMS Resonant Sensors by Electromagnetic Driving Presented at the COMSOL Conference 2009 Milan University of Brescia Department of Electronics for Automation Contactless Excitation of MEMS Resonant Sensors by Electromagnetic Driving Marco Baù, VF V.

More information

Evaluation of Pressure Sensor Performance Dr. Lynn Fuller Webpage:

Evaluation of Pressure Sensor Performance Dr. Lynn Fuller Webpage: ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING Evaluation of Pressure Sensor Performance Webpage: http://people.rit.edu/lffeee 82 Lomb Memorial Drive Rochester, NY 14623-5604 Tel (585) 475-2035

More information

Sample Exam # 2 ECEN 3320 Fall 2013 Semiconductor Devices October 28, 2013 Due November 4, 2013

Sample Exam # 2 ECEN 3320 Fall 2013 Semiconductor Devices October 28, 2013 Due November 4, 2013 Sample Exam # 2 ECEN 3320 Fall 203 Semiconductor Devices October 28, 203 Due November 4, 203. Below is the capacitance-voltage curve measured from a Schottky contact made on GaAs at T 300 K. Figure : Capacitance

More information

Lecture 19. Measurement of Solid-Mechanical Quantities (Chapter 8) Measuring Strain Measuring Displacement Measuring Linear Velocity

Lecture 19. Measurement of Solid-Mechanical Quantities (Chapter 8) Measuring Strain Measuring Displacement Measuring Linear Velocity MECH 373 Instrumentation and Measurements Lecture 19 Measurement of Solid-Mechanical Quantities (Chapter 8) Measuring Strain Measuring Displacement Measuring Linear Velocity Measuring Accepleration and

More information

Introduction to Semiconductor Physics. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India

Introduction to Semiconductor Physics. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India Introduction to Semiconductor Physics 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India http://folk.uio.no/ravi/cmp2013 Review of Semiconductor Physics Semiconductor fundamentals

More information

Microscopic Ohm s Law

Microscopic Ohm s Law Microscopic Ohm s Law Outline Semiconductor Review Electron Scattering and Effective Mass Microscopic Derivation of Ohm s Law 1 TRUE / FALSE 1. Judging from the filled bands, material A is an insulator.

More information

MOS CAPACITOR AND MOSFET

MOS CAPACITOR AND MOSFET EE336 Semiconductor Devices 1 MOS CAPACITOR AND MOSFET Dr. Mohammed M. Farag Ideal MOS Capacitor Semiconductor Devices Physics and Technology Chapter 5 EE336 Semiconductor Devices 2 MOS Capacitor Structure

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Chenming Hu.

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Chenming Hu. UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Spring 2009 Professor Chenming Hu Midterm I Name: Closed book. One sheet of notes is

More information

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00 1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.

More information

ELECTRONIC DEVICES AND CIRCUITS SUMMARY

ELECTRONIC DEVICES AND CIRCUITS SUMMARY ELECTRONIC DEVICES AND CIRCUITS SUMMARY Classification of Materials: Insulator: An insulator is a material that offers a very low level (or negligible) of conductivity when voltage is applied. Eg: Paper,

More information

Section 12: Intro to Devices

Section 12: Intro to Devices Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals Bond Model of Electrons and Holes Si Si Si Si Si Si Si Si Si Silicon

More information

Silicon Detectors in High Energy Physics

Silicon Detectors in High Energy Physics Thomas Bergauer (HEPHY Vienna) IPM Teheran 22 May 2011 Sunday: Schedule Silicon Detectors in Semiconductor Basics (45 ) Detector concepts: Pixels and Strips (45 ) Coffee Break Strip Detector Performance

More information

SENSORS and TRANSDUCERS

SENSORS and TRANSDUCERS SENSORS and TRANSDUCERS Tadeusz Stepinski, Signaler och system The Mechanical Energy Domain Physics Surface acoustic waves Silicon microresonators Variable resistance sensors Piezoelectric sensors Capacitive

More information

Design and Simulation of a Novel MEMS Bidirectional Anemometer

Design and Simulation of a Novel MEMS Bidirectional Anemometer 2013, TextRoad Publication ISSN 2090-4304 Journal of Basic and Applied Scientific Research www.textroad.com Design and Simulation of a Novel MEMS Bidirectional Anemometer Ali Pazoki Nezhad 1 and Mohamad

More information

Lecture 20. Measuring Pressure and Temperature (Chapter 9) Measuring Pressure Measuring Temperature MECH 373. Instrumentation and Measurements

Lecture 20. Measuring Pressure and Temperature (Chapter 9) Measuring Pressure Measuring Temperature MECH 373. Instrumentation and Measurements MECH 373 Instrumentation and Measurements Lecture 20 Measuring Pressure and Temperature (Chapter 9) Measuring Pressure Measuring Temperature 1 Measuring Acceleration and Vibration Accelerometers using

More information

Measurement Techniques for Engineers. Motion and Vibration Measurement

Measurement Techniques for Engineers. Motion and Vibration Measurement Measurement Techniques for Engineers Motion and Vibration Measurement Introduction Quantities that may need to be measured are velocity, acceleration and vibration amplitude Quantities useful in predicting

More information

Summary PHY101 ( 2 ) T / Hanadi Al Harbi

Summary PHY101 ( 2 ) T / Hanadi Al Harbi الكمية Physical Quantity القانون Low التعريف Definition الوحدة SI Unit Linear Momentum P = mθ be equal to the mass of an object times its velocity. Kg. m/s vector quantity Stress F \ A the external force

More information

ECEN 3320 Semiconductor Devices Final exam - Sunday December 17, 2000

ECEN 3320 Semiconductor Devices Final exam - Sunday December 17, 2000 Your Name: ECEN 3320 Semiconductor Devices Final exam - Sunday December 17, 2000 1. Review questions a) Illustrate the generation of a photocurrent in a p-n diode by drawing an energy band diagram. Indicate

More information

Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

More information

CEE575 - Homework 1. Resistive Sensing: Due Monday, January 29

CEE575 - Homework 1. Resistive Sensing: Due Monday, January 29 CEE575 - Homework 1 Resistive Sensing: Due Monday, January 29 Problem 1: Planes A metallic wire embedded in a strain gage is 4 cm long with a diameter of 0.1 mm. The gage is mounted on the upper surface

More information

Chapter 2. The Well. Cross Sections Patterning Design Rules Resistance PN Junction Diffusion Capacitance. Baker Ch. 2 The Well. Introduction to VLSI

Chapter 2. The Well. Cross Sections Patterning Design Rules Resistance PN Junction Diffusion Capacitance. Baker Ch. 2 The Well. Introduction to VLSI Chapter 2 The Well Cross Sections Patterning Design Rules Resistance PN Junction Diffusion Capacitance Joseph A. Elias, Ph.D. Adjunct Professor, University of Kentucky; Modeling MTS, Cypress Semiconductor

More information

Conventional Paper-I Part A. 1. (a) Define intrinsic wave impedance for a medium and derive the equation for intrinsic vy

Conventional Paper-I Part A. 1. (a) Define intrinsic wave impedance for a medium and derive the equation for intrinsic vy EE-Conventional Paper-I IES-01 www.gateforum.com Conventional Paper-I-01 Part A 1. (a) Define intrinsic wave impedance for a medium and derive the equation for intrinsic vy impedance for a lossy dielectric

More information

MOOC QP Set 2 Principles of Vibration Control

MOOC QP Set 2 Principles of Vibration Control Section I Section II Section III MOOC QP Set 2 Principles of Vibration Control (TOTAL = 100 marks) : 20 questions x 1 mark/question = 20 marks : 20 questions x 2 marks/question = 40 marks : 8 questions

More information

UNIVERSITY OF CAMBRIDGE INTERNATIONAL EXAMINATIONS General Certificate of Education Advanced Level

UNIVERSITY OF CAMBRIDGE INTERNATIONAL EXAMINATIONS General Certificate of Education Advanced Level UNIVERSITY OF CAMBRIDGE INTERNATIONAL EXAMINATIONS General Certificate of Education Advanced Level *2809002895* PHYSICS 9702/04 Paper 4 A2 Structured Questions October/November 2007 1 hour 45 minutes Candidates

More information

Published by: PIONEER RESEARCH & DEVELOPMENT GROUP(

Published by: PIONEER RESEARCH & DEVELOPMENT GROUP( MEMS based Piezo resistive Pressure Sensor Swathi Krishnamurthy 1, K.V Meena 2, E & C Engg. Dept., The Oxford College of Engineering, Karnataka. Bangalore 560009 Abstract The paper describes the performance

More information

Lesson 7: Thermal and Mechanical Element Math Models in Control Systems. 1 lesson7et438a.pptx. After this presentation you will be able to:

Lesson 7: Thermal and Mechanical Element Math Models in Control Systems. 1 lesson7et438a.pptx. After this presentation you will be able to: Lesson 7: Thermal and Mechanical Element Math Models in Control Systems ET 438a Automatic Control Systems Technology Learning Objectives After this presentation you will be able to: Explain how heat flows

More information

EF 152 Final Exam - Fall, 2016 Page 1 Copy 169

EF 152 Final Exam - Fall, 2016 Page 1 Copy 169 EF 152 Final Exam - Fall, 2016 Page 1 Copy 169 The equation sheets may be removed when the test begins Instructions Do not open the exam until instructed to do so. Do not leave if there is less than 5

More information

Piezoresistive sensors

Piezoresistive sensors Perform a basic bridge analysis, specifically, find output voltage as a function of input voltage and the various resistances, and find the relationship between output voltage and changes in resistance.

More information

Semiconductor-Detectors

Semiconductor-Detectors Semiconductor-Detectors 1 Motivation ~ 195: Discovery that pn-- junctions can be used to detect particles. Semiconductor detectors used for energy measurements ( Germanium) Since ~ 3 years: Semiconductor

More information

Energetic particles and their detection in situ (particle detectors) Part II. George Gloeckler

Energetic particles and their detection in situ (particle detectors) Part II. George Gloeckler Energetic particles and their detection in situ (particle detectors) Part II George Gloeckler University of Michigan, Ann Arbor, MI University of Maryland, College Park, MD Simple particle detectors Gas-filled

More information

N5 H AH Physical Quantity Symbol Unit Unit Abbrev. 5 absorbed dose D gray Gy

N5 H AH Physical Quantity Symbol Unit Unit Abbrev. 5 absorbed dose D gray Gy 5 absorbed dose D gray Gy 5 absorbed dose rate D gray per second gray per hour gray per year Gys -1 Gyh -1 Gyy -1 5 6 7 acceleration a metre per second per second m s -2 5 6 7 acceleration due to gravity

More information

ESE 372 / Spring 2013 / Lecture 5 Metal Oxide Semiconductor Field Effect Transistor

ESE 372 / Spring 2013 / Lecture 5 Metal Oxide Semiconductor Field Effect Transistor Metal Oxide Semiconductor Field Effect Transistor V G V G 1 Metal Oxide Semiconductor Field Effect Transistor We will need to understand how this current flows through Si What is electric current? 2 Back

More information

Physical and Biological Properties of Agricultural Products Acoustic, Electrical and Optical Properties and Biochemical Property

Physical and Biological Properties of Agricultural Products Acoustic, Electrical and Optical Properties and Biochemical Property Physical and Biological Properties of Agricultural Products Acoustic, Electrical and Optical Properties and Biochemical Property 1. Acoustic and Vibrational Properties 1.1 Acoustics and Vibration Engineering

More information

EE C245 / ME C218 INTRODUCTION TO MEMS DESIGN FALL 2009 PROBLEM SET #7. Due (at 7 p.m.): Thursday, Dec. 10, 2009, in the EE C245 HW box in 240 Cory.

EE C245 / ME C218 INTRODUCTION TO MEMS DESIGN FALL 2009 PROBLEM SET #7. Due (at 7 p.m.): Thursday, Dec. 10, 2009, in the EE C245 HW box in 240 Cory. Issued: Thursday, Nov. 24, 2009 PROBLEM SET #7 Due (at 7 p.m.): Thursday, Dec. 10, 2009, in the EE C245 HW box in 240 Cory. 1. Gyroscopes are inertial sensors that measure rotation rate, which is an extremely

More information

Date: _15 April (1) The only reference material you may use is one 8½x11 crib sheet and a calculator.

Date: _15 April (1) The only reference material you may use is one 8½x11 crib sheet and a calculator. PH1140: Oscillations and Waves Name: SOLUTIONS Conference: Date: _15 April 2005 EXAM #2: D2005 INSTRUCTIONS: (1) The only reference material you may use is one 8½x11 crib sheet and a calculator. (2) Show

More information

You wish to measure air temperatures over the range from 0 C to 50 C using the thermistor bridge shown below. R T Thermistor R 1 V + V R 3

You wish to measure air temperatures over the range from 0 C to 50 C using the thermistor bridge shown below. R T Thermistor R 1 V + V R 3 PROBLEM 1 (45 points) UNIVERSITY OF CALIFORNIA Electrical Engineering and Computer Sciences EECS 145L Electronic Transducer Lab MIDTERM # (100 points maximum) (closed book, calculators OK- note formulas

More information

EE 5344 Introduction to MEMS CHAPTER 6 Mechanical Sensors. 1. Position Displacement x, θ 2. Velocity, speed Kinematic

EE 5344 Introduction to MEMS CHAPTER 6 Mechanical Sensors. 1. Position Displacement x, θ 2. Velocity, speed Kinematic I. Mechanical Measurands: 1. Classification of main types: EE 5344 Introduction MEMS CHAPTER 6 Mechanical Sensors 1. Position Displacement x, θ. Velocity, speed Kinematic dx dθ v =, = ω 3. Acceleration

More information

Foundations of MEMS. Chang Liu. McCormick School of Engineering and Applied Science Northwestern University. International Edition Contributions by

Foundations of MEMS. Chang Liu. McCormick School of Engineering and Applied Science Northwestern University. International Edition Contributions by Foundations of MEMS Second Edition Chang Liu McCormick School of Engineering and Applied Science Northwestern University International Edition Contributions by Vaishali B. Mungurwadi B. V. Bhoomaraddi

More information

Available online at ScienceDirect. Procedia Computer Science 93 (2016 )

Available online at  ScienceDirect. Procedia Computer Science 93 (2016 ) Available online at www.sciencedirect.com ScienceDirect Procedia Computer Science 93 (2016 ) 108 116 6th International Conference On Advances In Computing & Communications, ICACC 2016, 6-8 September 2016,

More information

Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr.

Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr. Semiconductor Devices and Circuits Fall 2003 Midterm Exam Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering Name: Mat. -Nr.: Guidelines: Duration of the Midterm: 1 hour The exam is a closed

More information

Chapter 8. Model of the Accelerometer. 8.1 The static model 8.2 The dynamic model 8.3 Sensor System simulation

Chapter 8. Model of the Accelerometer. 8.1 The static model 8.2 The dynamic model 8.3 Sensor System simulation Chapter 8. Model of the Accelerometer 8.1 The static model 8.2 The dynamic model 8.3 Sensor System simulation 8.2.1 Basic equations 8.2.2 Resonant frequency 8.2.3 Squeeze-film damping 8.2 The dynamic model

More information

I. MEASUREMENT OF TEMPERATURE

I. MEASUREMENT OF TEMPERATURE I. MEASUREMENT OF TEMPERATURE Most frequent measurement and control Direct contact: thermometer, Indirect contact: pyrometer (detect generated heat or sensing optical properties) 1. Definition of temperature

More information

Section 12: Intro to Devices

Section 12: Intro to Devices Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si

More information

Transduction Based on Changes in the Energy Stored in an Electrical Field

Transduction Based on Changes in the Energy Stored in an Electrical Field Lecture 7-1 Transduction Based on Changes in the Energy Stored in an Electrical Field - Electrostriction The electrostrictive effect is a quadratic dependence of strain or stress on the polarization P

More information

Introduction to Strain Gage (SG) Technology

Introduction to Strain Gage (SG) Technology IDMIL - Input Devices and Music Interaction Laboratory McGill University Introduction to Strain Gage (SG) Technology Carolina Brum Medeiros March 14, 2011 About this talk objective: present the essential

More information

Semiconductor Physics Problems 2015

Semiconductor Physics Problems 2015 Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible

More information

Study of Hall Effect Sensor and Variety of Temperature Related Sensitivity

Study of Hall Effect Sensor and Variety of Temperature Related Sensitivity 308 J. Eng. Technol. Sci., Vol. 49, No. 3, 2017, 308-321 Study of Hall Effect Sensor and Variety of Temperature Related Sensitivity Awadia Ahmed Ali, Guo Yanling * & Chang Zifan College of Mechanical and

More information

OPTI510R: Photonics. Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626

OPTI510R: Photonics. Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626 OPTI510R: Photonics Khanh Kieu College of Optical Sciences, University of Arizona kkieu@optics.arizona.edu Meinel building R.626 Announcements Homework #6 is assigned, due May 1 st Final exam May 8, 10:30-12:30pm

More information

3.155J/6.152J Microelectronic Processing Technology Fall Term, 2004

3.155J/6.152J Microelectronic Processing Technology Fall Term, 2004 3.155J/6.152J Microelectronic Processing Technology Fall Term, 2004 Bob O'Handley Martin Schmidt Quiz Nov. 17, 2004 Ion implantation, diffusion [15] 1. a) Two identical p-type Si wafers (N a = 10 17 cm

More information

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 19, NO. 1, FEBRUARY /$ IEEE

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 19, NO. 1, FEBRUARY /$ IEEE JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 19, NO. 1, FEBRUARY 2010 137 Piezoresistive Cantilever Performance Part I: Analytical Model for Sensitivity Sung-Jin Park, Member, IEEE,JosephC.Doll,Student

More information

CAMBRIDGE INTERNATIONAL EXAMINATIONS General Certificate of Education Advanced Subsidiary Level and Advanced Level

CAMBRIDGE INTERNATIONAL EXAMINATIONS General Certificate of Education Advanced Subsidiary Level and Advanced Level Centre Number Candidate Number Candidate Name CAMBRIDGE INTERNATIONAL EXAMINATIONS General Certificate of Education Advanced Subsidiary Level and Advanced Level PHYSICS 9702/2 PAPER 2 AS Core OCTOBER/NOVEMBER

More information

SUPPLEMENTARY NOTES Supplementary Note 1: Fabrication of Scanning Thermal Microscopy Probes

SUPPLEMENTARY NOTES Supplementary Note 1: Fabrication of Scanning Thermal Microscopy Probes SUPPLEMENTARY NOTES Supplementary Note 1: Fabrication of Scanning Thermal Microscopy Probes Fabrication of the scanning thermal microscopy (SThM) probes is summarized in Supplementary Fig. 1 and proceeds

More information

Laboratory 7 Measurement on Strain & Force. Department of Mechanical and Aerospace Engineering University of California, San Diego MAE170

Laboratory 7 Measurement on Strain & Force. Department of Mechanical and Aerospace Engineering University of California, San Diego MAE170 Laboratory 7 Measurement on Strain & Force Department of Mechanical and Aerospace Engineering University of California, San Diego MAE170 Megan Ong Diana Wu Wong B01 Tuesday 11am May 17 th, 2015 Abstract:

More information

L 1 L 2 L 2. Almost rigid Motion

L 1 L 2 L 2. Almost rigid Motion Microsystem Design Stephen D. Senturia Kluwer Academic Publishers Errata The following errors occur in the First Printing This list compiled on March 9, Page 36 Page 4 Page 159 Page 168 Page 179 Page 18

More information

Sensors and Transducers. mywbut.com

Sensors and Transducers. mywbut.com Sensors and Transducers 1 Objectives At the end of this chapter, the students should be able to: describe the principle of operation of various sensors and transducers; namely.. Resistive Position Transducers.

More information

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors. Fabrication of semiconductor sensor

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors. Fabrication of semiconductor sensor Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Fabrication of semiconductor sensor

More information

FYS 3028/8028 Solar Energy and Energy Storage. Calculator with empty memory Language dictionaries

FYS 3028/8028 Solar Energy and Energy Storage. Calculator with empty memory Language dictionaries Faculty of Science and Technology Exam in: FYS 3028/8028 Solar Energy and Energy Storage Date: 11.05.2016 Time: 9-13 Place: Åsgårdvegen 9 Approved aids: Type of sheets (sqares/lines): Number of pages incl.

More information

(1) The only reference material you may use is one 8½x11 crib sheet and a calculator.

(1) The only reference material you may use is one 8½x11 crib sheet and a calculator. PH1140: Oscillations and Waves Name: SOLUTIONS AT END Conference: Date: _14 April 2005 EXAM #2: D2006 INSTRUCTIONS: (1) The only reference material you may use is one 8½x11 crib sheet and a calculator.

More information

Chap. 11 Semiconductor Diodes

Chap. 11 Semiconductor Diodes Chap. 11 Semiconductor Diodes Semiconductor diodes provide the best resolution for energy measurements, silicon based devices are generally used for charged-particles, germanium for photons. Scintillators

More information

CHAPTER 5 SIMULATION OF A PAYLOAD FAIRING

CHAPTER 5 SIMULATION OF A PAYLOAD FAIRING CHAPTER 5 SIMULATION OF A PAYLOAD FAIRING In the preceding chapters, a model of a PZT actuator exciting a SS cylinder has been presented. The structural model is based on a modal expansion formulation

More information

Slide 1. Temperatures Light (Optoelectronics) Magnetic Fields Strain Pressure Displacement and Rotation Acceleration Electronic Sensors

Slide 1. Temperatures Light (Optoelectronics) Magnetic Fields Strain Pressure Displacement and Rotation Acceleration Electronic Sensors Slide 1 Electronic Sensors Electronic sensors can be designed to detect a variety of quantitative aspects of a given physical system. Such quantities include: Temperatures Light (Optoelectronics) Magnetic

More information

Carriers Concentration in Semiconductors - V. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India

Carriers Concentration in Semiconductors - V. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India Carriers Concentration in Semiconductors - V 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India http://folk.uio.no/ravi/semi2013 Motion and Recombination of Electrons and

More information

UNIVERSITY OF CALIFORNIA. College of Engineering. Department of Electrical Engineering and Computer Sciences. Professor Ali Javey.

UNIVERSITY OF CALIFORNIA. College of Engineering. Department of Electrical Engineering and Computer Sciences. Professor Ali Javey. UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EE 143 Professor Ali Javey Spring 2009 Exam 2 Name: SID: Closed book. One sheet of notes is allowed.

More information

Semiconductor X-Ray Detectors. Tobias Eggert Ketek GmbH

Semiconductor X-Ray Detectors. Tobias Eggert Ketek GmbH Semiconductor X-Ray Detectors Tobias Eggert Ketek GmbH Semiconductor X-Ray Detectors Part A Principles of Semiconductor Detectors 1. Basic Principles 2. Typical Applications 3. Planar Technology 4. Read-out

More information

10 Measurement of Acceleration, Vibration and Shock Transducers

10 Measurement of Acceleration, Vibration and Shock Transducers Chapter 10: Acceleration, Vibration and Shock Measurement Dr. Lufti Al-Sharif (Revision 1.0, 25/5/2008) 1. Introduction This chapter examines the measurement of acceleration, vibration and shock. It starts

More information