Review: Depletion Region Recombination
|
|
- Dortha Todd
- 5 years ago
- Views:
Transcription
1 Review: Depletion Region Recombination Flat Quasi-Fermi Level (QFL) Requires rate limiting recombination is slow compared to thermal diffusion Assuming: k n ~k p = σ v, Flat QFL We get for recombination in the bulk at position x, U (x)=n óv dr T n(x)p(x) - n n(x)+p(x) i Note, Vapp < 0 here
2 Review: Depletion Region Recombination n(x)p(x)=n i Exp(-qV app/kt) n(x)p(x) - n U dr(x)=ntóv n(x)+p(x) n( x) p( x ) = constant for flat QFL and constant V app i -Substitute definitions and divide top and bottom by n(x)p(x) U (x)= dr N óvn {Exp(-qV /kt)-exp(qv /kt)} T i app app n(x) p(x) + p(x) n(x)
3 Review: Depletion Region Recombination U (x)= dr app N óvn sinh(-qv T i app n(x) p(x) + p(x) n(x) /kt) Or, for V >3kT T i app U (x)= Maximum occurs when n(x) = p(x) dr T i U dr,max (x)= Exp - N óvn Exp(-qV n(x) + p(x) N óvn! qvapp " # $ % kt & p(x) n(x) /kt)
4 New Material: Recall we desire U TOTAL Continue with U dr,max, recalling we want to solve for U TOTAL, as W' U TOTAL =! U(x) dx 0 We need definition for n(x) and p(x) You can show that n(x)=n mexp[qå(x-x m)/kt] p(x)=p Exp[-qå(x-x )/kt] m å = Electric Field Nm = concentration of e - for max U, n(xm)=p(xm) Xm= position where n=nm m In region 1, x<xm Exp (-) so n(x)<n(xm) More band bending In region, x>xm Exp (+) so n(x)>n(xm) Less band bending
5 Calculating U TOTAL : Back to Math Substituting in for n(x) and p(x) N óvn Exp(-qV /kt) T i app U(x)= n m Exp[qå(x-x m )/kt] p m Exp[-qå(x-x m )/kt] + p Exp[-qå(x-x )/kt] n Exp[qå(x-x )/kt] m m m m Use Exp(x) =Exp(x) and n m= p Exp(-x) m N óvn Exp(-qV /kt) T i app U(x)= Exp[qå(x-x m )/kt]+exp[-qå(x-x m )/kt]
6 Use definition of cosh x = U MAX U(x)= cosh[qå(x-x m )/kt] Calculating U TOTAL x x e +e, and formula for U MAX W' W' UMAX U TOTAL =! U(x) dx =! dx cosh[qå(x-x 0 0 m)/kt] For normally doped Si with Kn~Kp (assumed) U MAX is strongly peaked away from W, so we can extend the integral from W.
7 ! " Calculating U TOTAL U MAX U TOTAL = dx cosh[qå(x-x 0 m)/kt] After a change of variables, Recognizing that: V å= = cm V +V bi W app! D kt U TOTAL = U qå D ktw U = U TOTAL q(v +V )!"#"$ bi app # ratio of thermal spreading to carrier positioning. Thermal Voltage 0 dx " = cosh[x] MAX MAX
8 U TOTAL Substituting for U MAX, we obtain D ktw(n óv)n! qv " U = T i Exp - app TOTAL # $ q(v +V ) kt bi app % &!"""#"""$!""#""$ "Jo" term Notice Vapp though Important, A = not like thermionic emission A = : There are e - s and h + s recombining. It is as if you lose half of the voltage to the other carrier.
9 U TOTAL : Everyone Does it Differently Note: Nate and Mary quote a different value. TOTAL W' U = U(x) dx = Box Area! 0 kt Box Width = W q(v +V ) bi app!"#"$ Dimensionless: ratio thermal to applied volage kt 1 U = U W TOTAL MAX q (V +V app) bi D J dr and UTOTAL off by : O(1)
10 Quasi-Neutral Region Ionized donor atoms neutralized by injection of electrons into CB. p(x) has not changed: before injection of electrons, p(w)<p(w ) despite flat bands Concentration gradient causing holes to diffuse away from W into the bulk. Need to understand Diffusion/Recombination/Generation equations Assume No Generation
11 Diffusion-Recombination Recombination-Diffusion = 0 Diffusion:! Co Fick's First Law: Flux=-D ( x, t ) o! x! (, ) (, ) Fick's Second Law: C o x t! =D C o x t! t o! x Putting it together: " p p(x)-p o( x) " p( x) = 0 = - D " t! o p!"#"$ " x Excess Carrier lifetime Need Boundary Conditions
12 app Diffusion-Recombination Assume no recombination in D.R. or at S.S. V < 0, so more holes at W' as E suggest i F,p At x=w': n(w')p(w') = n Exp(-qV n(w') = n since E app /kt) = E o F,n F,o Boundary Conditions for Bulk D-R stats: p(w') = poexp(-qv app/kt) p(!) = p o
13 After the math: Diffusion-Recombination! (x-w') " p(x) = p o+p o[exp(-qv app/kt)-1]exp - # L p $ % & L p= Diffusion Length = Dpôp Does it work? D = R? recall, D=D o! You tell me.! p( x) x
14 Diffusion-Recombination Current = -q Flux +q Flux hole electrons! p(x) Current= -q Flux hole W' =-qdp! x W' We only have p(x), so lets take region where flux only due to holes: at x=w # p p! o (x-w') " = - [Exp(-qV app/kt)-1]exp - Evaluate at x=w # x Lp $ Lp % & ' n n p J = qd o [Exp(-qV /kt)-1] ; n p n p i i p L app o o =, B/R i o =! p no N D qdpn i J = [Exp(-qV app/kt)-1] B/R LpN D!"#"$ J o
15 k k (n p - n n p ) U =N b b i bulk T k n(n +n )+k p(p +p ) b 1 b 1 -! n -! p U= =! t! t Schockley-Read-Hall -" n =N k n ' (1-f T)- N kn f T(D.O.S.in CB,empty) " t T n b T -" p ' = N kpp f T! N k p (1! f T)(D.O.S.in VB,filled) " t T b T k ' k n, k ' n = n p = kpp 1 1 n = N Exp[-(E -E T )/kt] 1 C C p = N V Exp[-(E T -E V )/kt] 1 Trapped states can be caused by metal impurities, oxygen, or dopants
16 Schockley-Read-Hall Units for U = cm bulk 6 cm -6 (cm ) -3 s -3-1 =cm s 3 cm -3 (cm ) s cm 7 k= óv = cm ; v th =10 cm/s; s ó =!r =!(3*10 )! 10 trap -8 3 k n =vthó trap! 10 cm /s! =lifetime of carrier 1 ô n = k N n T
17 Schockley-Read-Hall LLI: Lower Level Injection of Electrons and holes from photons For n-type: 15 Än<<n b(10 ) 5 Äp<<p b(10 ) HLI: Generate more electrons and holes than We had in our lattice: " # E C =Än=Äp>n b n= f(! )DOS; Using Boltzmann Statistics, f(! )=Exp[-(E-E )/ kt ] n=än+n p=äp+p b,o b,o F
18 Schockley-Read-Hall (Än+nb,o)( Äp+p b,o) - n ÄnÄp + pb,oän + n b,oäp + pb,onb,o- n U = i = i bulk ô p(än+n b,o+n )+ô n(äp+p b,o+p ) ô p(än+n b,o+n )+ô n(äp+p b,o+p ) Assuming LLI of n-type p <<! n =! p << n! b, o "#$#%!, ) (10 ) (10 ) (10 b o U is dominated by " p*n term in numerator bulk b,o and! p n in denominator b,o Leaving us with : Äp U = bulk ô p We assumed ô n! ô p
19 Schockley-Read-Hall Äp! n! p LLI: U = = " = " bulk ô p! t! t Solving yields: p= " pexp(-t/! p ) + p o For HLI, same assumptions: HLI decays twice as slowly HLI: U = bulk Äp ôp LLI: Wait for hole carriers to recombine HLI: hole & e- carriers must recombine twice as long
Recombination: Depletion. Auger, and Tunnelling
Recombination: Depletion Region, Bulk, Radiative, Auger, and Tunnelling Ch 140 Lecture Notes #13 Prepared by David Gleason We assume: Review of Depletion Region Recombination Flat Quantum Fermi Levels
More informationSemiconductor Physics. Lecture 3
Semiconductor Physics Lecture 3 Intrinsic carrier density Intrinsic carrier density Law of mass action Valid also if we add an impurity which either donates extra electrons or holes the number of carriers
More informationCLASS 3&4. BJT currents, parameters and circuit configurations
CLASS 3&4 BJT currents, parameters and circuit configurations I E =I Ep +I En I C =I Cp +I Cn I B =I BB +I En -I Cn I BB =I Ep -I Cp I E = I B + I C I En = current produced by the electrons injected from
More informationESE 372 / Spring 2013 / Lecture 5 Metal Oxide Semiconductor Field Effect Transistor
Metal Oxide Semiconductor Field Effect Transistor V G V G 1 Metal Oxide Semiconductor Field Effect Transistor We will need to understand how this current flows through Si What is electric current? 2 Back
More informationSession 5: Solid State Physics. Charge Mobility Drift Diffusion Recombination-Generation
Session 5: Solid State Physics Charge Mobility Drift Diffusion Recombination-Generation 1 Outline A B C D E F G H I J 2 Mobile Charge Carriers in Semiconductors Three primary types of carrier action occur
More informationQuiz #1 Practice Problem Set
Name: Student Number: ELEC 3908 Physical Electronics Quiz #1 Practice Problem Set? Minutes January 22, 2016 - No aids except a non-programmable calculator - All questions must be answered - All questions
More informationSemiconductor Physics fall 2012 problems
Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each
More informationChapter 7. The pn Junction
Chapter 7 The pn Junction Chapter 7 PN Junction PN junction can be fabricated by implanting or diffusing donors into a P-type substrate such that a layer of semiconductor is converted into N type. Converting
More informationECE-305: Spring 2018 Exam 2 Review
ECE-305: Spring 018 Exam Review Pierret, Semiconductor Device Fundamentals (SDF) Chapter 3 (pp. 75-138) Chapter 5 (pp. 195-6) Professor Peter Bermel Electrical and Computer Engineering Purdue University,
More informationn N D n p = n i p N A
Summary of electron and hole concentration in semiconductors Intrinsic semiconductor: E G n kt i = pi = N e 2 0 Donor-doped semiconductor: n N D where N D is the concentration of donor impurity Acceptor-doped
More informationLecture 16 - The pn Junction Diode (II) Equivalent Circuit Model. April 8, 2003
6.012 - Microelectronic Devices and Circuits - Spring 2003 Lecture 16-1 Lecture 16 - The pn Junction Diode (II) Equivalent Circuit Model April 8, 2003 Contents: 1. I-V characteristics (cont.) 2. Small-signal
More informationSemiconductor Junctions
8 Semiconductor Junctions Almost all solar cells contain junctions between different materials of different doping. Since these junctions are crucial to the operation of the solar cell, we will discuss
More informationThe German University in Cairo. Faculty of Information Engineering & Technology Semiconductors (Elct 503) Electronics Department Fall 2014
The German University in Cairo th Electronics 5 Semester Faculty of Information Engineering & Technology Semiconductors (Elct 503) Electronics Department Fall 2014 Problem Set 3 1- a) Find the resistivity
More informationSemiconductor Physics fall 2012 problems
Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each
More informationcollisions of electrons. In semiconductor, in certain temperature ranges the conductivity increases rapidly by increasing temperature
1.9. Temperature Dependence of Semiconductor Conductivity Such dependence is one most important in semiconductor. In metals, Conductivity decreases by increasing temperature due to greater frequency of
More informationConsider a uniformly doped PN junction, in which one region of the semiconductor is uniformly doped with acceptor atoms and the adjacent region is
CHAPTER 7 The PN Junction Consider a uniformly doped PN junction, in which one region of the semiconductor is uniformly doped with acceptor atoms and the adjacent region is uniformly doped with donor atoms.
More informationEECS130 Integrated Circuit Devices
EECS130 Integrated Circuit Devices Professor Ali Javey 9/18/2007 P Junctions Lecture 1 Reading: Chapter 5 Announcements For THIS WEEK OLY, Prof. Javey's office hours will be held on Tuesday, Sept 18 3:30-4:30
More informationSemiconductor device structures are traditionally divided into homojunction devices
0. Introduction: Semiconductor device structures are traditionally divided into homojunction devices (devices consisting of only one type of semiconductor material) and heterojunction devices (consisting
More informationV BI. H. Föll: kiel.de/matwis/amat/semi_en/kap_2/backbone/r2_2_4.html. different electrochemical potentials (i.e.
Consider the the band diagram for a homojunction, formed when two bits of the same type of semicondutor (e.g. Si) are doped p and ntype and then brought into contact. Electrons in the two bits have different
More informationSection 12: Intro to Devices
Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals Bond Model of Electrons and Holes Si Si Si Si Si Si Si Si Si Silicon
More informationCharge Carriers in Semiconductor
Charge Carriers in Semiconductor To understand PN junction s IV characteristics, it is important to understand charge carriers behavior in solids, how to modify carrier densities, and different mechanisms
More informationPeak Electric Field. Junction breakdown occurs when the peak electric field in the PN junction reaches a critical value. For the N + P junction,
Peak Electric Field Junction breakdown occurs when the peak electric field in the P junction reaches a critical value. For the + P junction, qa E ( x) ( xp x), s W dep 2 s ( bi Vr ) 2 s potential barrier
More informationFundamentals of Semiconductor Physics
Fall 2007 Fundamentals of Semiconductor Physics 万 歆 Zhejiang Institute of Modern Physics xinwan@zimp.zju.edu.cn http://zimp.zju.edu.cn/~xinwan/ Transistor technology evokes new physics The objective of
More informationLecture 15 - The pn Junction Diode (I) I-V Characteristics. November 1, 2005
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 15-1 Lecture 15 - The pn Junction Diode (I) I-V Characteristics November 1, 2005 Contents: 1. pn junction under bias 2. I-V characteristics
More informationSemiconductor Physics and Devices
The pn Junction 1) Charge carriers crossing the junction. 3) Barrier potential Semiconductor Physics and Devices Chapter 8. The pn Junction Diode 2) Formation of positive and negative ions. 4) Formation
More informationSemiconductor Physics. Lecture 6
Semiconductor Physics Lecture 6 Recap pn junction and the depletion region Driven by the need to have no gradient in the fermi level free carriers migrate across the pn junction leaving a region with few
More informationSolar Cell Physics: recombination and generation
NCN Summer School: July 2011 Solar Cell Physics: recombination and generation Prof. Mark Lundstrom lundstro@purdue.edu Electrical and Computer Engineering Purdue University West Lafayette, Indiana USA
More information( )! N D ( x) ) and equilibrium
ECE 66: SOLUTIONS: ECE 66 Homework Week 8 Mark Lundstrom March 7, 13 1) The doping profile for an n- type silicon wafer ( N D = 1 15 cm - 3 ) with a heavily doped thin layer at the surface (surface concentration,
More informationSemiconductor Device Physics
1 Semiconductor Device Physics Lecture 3 http://zitompul.wordpress.com 2 0 1 3 Semiconductor Device Physics 2 Three primary types of carrier action occur inside a semiconductor: Drift: charged particle
More informationMetal Semiconductor Contacts
Metal Semiconductor Contacts The investigation of rectification in metal-semiconductor contacts was first described by Braun [33-35], who discovered in 1874 the asymmetric nature of electrical conduction
More informationLecture 16 The pn Junction Diode (III)
Lecture 16 The pn Junction iode (III) Outline I V Characteristics (Review) Small signal equivalent circuit model Carrier charge storage iffusion capacitance Reading Assignment: Howe and Sodini; Chapter
More informationReview Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination
Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination The Metal-Semiconductor Junction: Review Energy band diagram of the metal and the semiconductor before (a)
More informationPHYS208 P-N Junction. Olav Torheim. May 30, 2007
1 PHYS208 P-N Junction Olav Torheim May 30, 2007 1 Intrinsic semiconductors The lower end of the conduction band is a parabola, just like in the quadratic free electron case (E = h2 k 2 2m ). The density
More informationThis is the 15th lecture of this course in which we begin a new topic, Excess Carriers. This topic will be covered in two lectures.
Solid State Devices Dr. S. Karmalkar Department of Electronics and Communication Engineering Indian Institute of Technology, Madras Lecture - 15 Excess Carriers This is the 15th lecture of this course
More informationThermionic emission vs. drift-diffusion vs. p-n junction
6.772/SMA5111 - Compound Semiconductors Lecture 4 - Carrier flow in heterojunctions - Outline A look at current models for m-s junctions (old business) Thermionic emission vs. drift-diffusion vs. p-n junction
More informationL5: Surface Recombination, Continuity Equation & Extended Topics tanford University
L5: Surface Recombination, Continuity Equation & Extended Topics EE 216 : Aneesh Nainani 1 Announcements Project Select topic by Jan 29 (Tuesday) 9 topics, maximum 4 students per topic Quiz Thursday (Jan
More informationLecture 20 - p-n Junction (cont.) October 21, Non-ideal and second-order effects
6.70J/3.43J - Integrated Microelectronic Devices - Fall 00 Lecture 0-1 Lecture 0 - p-n Junction (cont.) October 1, 00 Contents: 1. Non-ideal and second-order effects Reading assignment: del Alamo, Ch.
More informationModeling Recombination in Solar Cells
Macalester Journal of Physics and Astronomy Volume 6 Issue 1 Spring 2018 Article 2 Modeling Recombination in Solar Cells Paul Chery Macalester College, pchery@macalester.edu Abstract Solar cells are a
More informationSemiconductor Physics Problems 2015
Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible
More informationObjective: The purpose of these notes is to familiarize students with semiconductors and devices including the P-N junction, and the transistors.
- 1-1/15/02C:\lec320.doc H.L.Kwok SEMICONDUCTOR MATERIALS AND DEVICES by H.L. Kwok Objective: The purpose of these notes is to familiarize students with semiconductors and devices including the P-N junction,
More informationSection 12: Intro to Devices
Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si
More informationCarriers Concentration and Current in Semiconductors
Carriers Concentration and Current in Semiconductors Carrier Transport Two driving forces for carrier transport: electric field and spatial variation of the carrier concentration. Both driving forces lead
More informationObjective: The purpose of these notes is to familiarize students with semiconductors and devices including the P-N junction, and the transistors.
- 1-3/4/02C:\lec320.doc H.L.Kwok SEMICONDUCTOR MATERIALS AND DEVICES by H.L. Kwok Objective: The purpose of these notes is to familiarize students with semiconductors and devices including the P-N junction,
More informationPART III SEMICONDUCTOR DEVICES
PART III SEMICONDUCTOR DEVICES Chapter 3: Semiconductor Diodes Chapter 4: Bipolar Junction Transistors (BJT s) Chapter 5: Field Effect Transistors (FET s) Chapter 6: Fabrication technology for monolithic
More informationρ ρ LED access resistances d A W d s n s p p p W the output window size p-layer d p series access resistance d n n-layer series access resistance
LED access resistances W the output window size p-layer series access resistance d p n-layer series access resistance d n The n-layer series access resistance R = ρ s n where the resistivity of the n-layer
More informationECE 606 Homework Week 7 Mark Lundstrom Purdue University (revised 2/25/13) e E i! E T
ECE 606 Homework Week 7 Mark Lundstrom Purdue University (revised 2/25/13) 1) Consider an n- type semiconductor for which the only states in the bandgap are donor levels (i.e. ( E T = E D ). Begin with
More informationSchottky Rectifiers Zheng Yang (ERF 3017,
ECE442 Power Semiconductor Devices and Integrated Circuits Schottky Rectifiers Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Schottky Rectifier Structure 2 Metal-Semiconductor Contact The work function
More informationLecture 3 Semiconductor Physics (II) Carrier Transport
Lecture 3 Semiconductor Physics (II) Carrier Transport Thermal Motion Carrier Drift Carrier Diffusion Outline Reading Assignment: Howe and Sodini; Chapter 2, Sect. 2.4-2.6 6.012 Spring 2009 Lecture 3 1
More informationLecture-4 Junction Diode Characteristics
1 Lecture-4 Junction Diode Characteristics Part-II Q: Aluminum is alloyed into n-type Si sample (N D = 10 16 cm 3 ) forming an abrupt junction of circular cross-section, with an diameter of 0.02 in. Assume
More informationSimulation of Quantum Dot p-i-n Junction Solar Cell using Modified Drift Diffusion Model
International Journal of Pure and Applied Physics. ISSN 0973-1776 Volume 13, Number 1 (017), pp. 59-66 Research India Publications http://www.ripublication.com Simulation of Quantum Dot p-i-n Junction
More informationLecture 15: Optoelectronic devices: Introduction
Lecture 15: Optoelectronic devices: Introduction Contents 1 Optical absorption 1 1.1 Absorption coefficient....................... 2 2 Optical recombination 5 3 Recombination and carrier lifetime 6 3.1
More informationDevice Physics: The Bipolar Transistor
Monolithic Amplifier Circuits: Device Physics: The Bipolar Transistor Chapter 4 Jón Tómas Guðmundsson tumi@hi.is 2. Week Fall 2010 1 Introduction In analog design the transistors are not simply switches
More informationSession 6: Solid State Physics. Diode
Session 6: Solid State Physics Diode 1 Outline A B C D E F G H I J 2 Definitions / Assumptions Homojunction: the junction is between two regions of the same material Heterojunction: the junction is between
More informationSilicon solar cells: basics of simulation and modelling
Silicon solar cells: basics of simulation and modelling Using the mathematical program Maple to simulate and model a silicon solar cell Kisel solceller: Grunderna för simulering och modellering Sebastian
More informationPhotonic Devices. Light absorption and emission. Transitions between discrete states
Light absorption and emission Photonic Devices Transitions between discrete states Transition rate determined by the two states: Fermi s golden rule Absorption and emission of a semiconductor Vertical
More informationAppendix 1: List of symbols
Appendix 1: List of symbols Symbol Description MKS Units a Acceleration m/s 2 a 0 Bohr radius m A Area m 2 A* Richardson constant m/s A C Collector area m 2 A E Emitter area m 2 b Bimolecular recombination
More informationIn this block the two transport mechanisms will be discussed: diffusion and drift.
ET3034TUx - 2.3.3 Transport of charge carriers What are the charge carrier transport principles? In this block the two transport mechanisms will be discussed: diffusion and drift. We will discuss that
More informationPN Junction. Ang M.S. October 8, Maxwell s Eqautions Review : Poisson s Equation for PNJ. Q encl S. E ds. σ = dq ds. ρdv = Q encl.
PN Junction Ang M.S. October 8, 0 Reference Sedra / Smith, M icroelectronic Circuits Maxwell s Eqautions Review : Poisson s Equation for PNJ. Gauss Law for E field The total enclosed charge Q encl. insde
More informationELEC 3908, Physical Electronics, Lecture 18. The Early Effect, Breakdown and Self-Heating
ELEC 3908, Physical Electronics, Lecture 18 The Early Effect, Breakdown and Self-Heating Lecture Outline Previous 2 lectures analyzed fundamental static (dc) carrier transport in the bipolar transistor
More informationDiodes. anode. cathode. cut-off. Can be approximated by a piecewise-linear-like characteristic. Lecture 9-1
Diodes mplest nonlinear circuit element Basic operation sets the foundation for Bipolar Junction Transistors (BJTs) Also present in Field Effect Transistors (FETs) Ideal diode characteristic anode cathode
More informationHoles (10x larger). Diode currents proportional to minority carrier densities on each side of the depletion region: J n n p0 = n i 2
Part V. (40 pts.) A diode is composed of an abrupt PN junction with N D = 10 16 /cm 3 and N A =10 17 /cm 3. The diode is very long so you can assume the ends are at x =positive and negative infinity. 1.
More informationThe Law of the Junction Revisited. Mark Lundstrom Network for Computational Nanotechnology and Purdue University ( ). (1)
The Law of the Junction Revisited Mark Lundstrom Network for Computational Nanotechnology and Purdue University Consider a one-sided, short base diode like that shown in Fig.. We usually analyze the I-V
More informationLecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium September 20, 2005
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 4-1 Contents: Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium September 20, 2005
More informationFinal Examination EE 130 December 16, 1997 Time allotted: 180 minutes
Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2
More informationUNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm I Name: Closed book. One sheet of notes is allowed.
More informationUNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Chenming Hu.
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Spring 2009 Professor Chenming Hu Midterm I Name: Closed book. One sheet of notes is
More informationSolid State Physics SEMICONDUCTORS - IV. Lecture 25. A.H. Harker. Physics and Astronomy UCL
Solid State Physics SEMICONDUCTORS - IV Lecture 25 A.H. Harker Physics and Astronomy UCL 9.9 Carrier diffusion and recombination Suppose we have a p-type semiconductor, i.e. n h >> n e. (1) Create a local
More informationCarriers Concentration, Current & Hall Effect in Semiconductors. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India
Carriers Concentration, Current & Hall Effect in Semiconductors 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India http://folk.uio.no/ravi/semi2013 Conductivity Charge
More informationLecture 11 Midterm Review Lecture
Lecture 11 Midterm Review Lecture 1/128 Announcements Homework 3/6: Is online now. Due Monday 14 th May at 10:00am. 2/128 1 Lecture 11 Exam Format. Units. Example Questions. Note: this is not an exhaustive
More informationCarrier Action: Motion, Recombination and Generation. What happens after we figure out how many electrons and holes are in the semiconductor?
Carrier Action: Motion, Recombination and Generation. What happens after we figure out how many electrons and holes are in the semiconductor? 1 Carrier Motion I Described by 2 concepts: Conductivity: σ
More informationElectronic Supporting Information
Characterization of Planar Lead Halide Perovskite Solar Cells by Impedance Spectroscopy, Open Circuit Photovoltage Decay and Intensity-Modulated Photovoltage/Photocurrent Spectroscopy Adam Pockett 1, Giles
More informationBand-bending. EE 436 band-bending 1
Band-bending In the p-n junction and BJT, we saw that the semiconductor band edges were bent in the depletion layers. We used the depletion approximation and Poisson s equation to relate the band-bending
More informationCHAPTER 4: P-N P N JUNCTION Part 2. M.N.A. Halif & S.N. Sabki
CHAPTER 4: P-N P N JUNCTION Part 2 Part 2 Charge Storage & Transient Behavior Junction Breakdown Heterojunction CHARGE STORAGE & TRANSIENT BEHAVIOR Once injected across the junction, the minority carriers
More information1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00
1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.
More informationChemistry Instrumental Analysis Lecture 8. Chem 4631
Chemistry 4631 Instrumental Analysis Lecture 8 UV to IR Components of Optical Basic components of spectroscopic instruments: stable source of radiant energy transparent container to hold sample device
More informationSEMICONDUCTOR PHYSICS REVIEW BONDS,
SEMICONDUCTOR PHYSICS REVIEW BONDS, BANDS, EFFECTIVE MASS, DRIFT, DIFFUSION, GENERATION, RECOMBINATION February 3, 2011 The University of Toledo, Department of Physics and Astronomy SSARE, PVIC Principles
More informationSpring Semester 2012 Final Exam
Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters
More informationMinority Carrier Diffusion Equation (MCDE)
ECE-305: Spring 2015 Minority Carrier Diffusion Equation (MCDE) Professor Mark undstrom Electrical and Computer Engineering Purdue University, West afayette, IN USA lundstro@purdue.edu Pierret, Semiconductor
More information- A free electron in CB "meets" a hole in VB: the excess energy -> a photon energy.
5.4. Recombination and Minority Carrier Injection 5.4.1 Direct and Indirect Recombination A free electron in CB "meets" a hole in VB: the excess energy > a photon energy. Energy CB ψ cb (k cb ) ψ vb (k
More informationSection 7: Diffusion. Jaeger Chapter 4. EE143 Ali Javey
Section 7: Diffusion Jaeger Chapter 4 Surface Diffusion: Dopant Sources (a) Gas Source: AsH 3, PH 3, B 2 H 6 (b) Solid Source BN Si BN Si (c) Spin-on-glass SiO 2 +dopant oxide (d) Liquid Source. Fick s
More informationFor the following statements, mark ( ) for true statement and (X) for wrong statement and correct it.
Benha University Faculty of Engineering Shoubra Electrical Engineering Department First Year communications. Answer all the following questions Illustrate your answers with sketches when necessary. The
More informationECE 442. Spring, Lecture -2
ECE 442 Power Semiconductor Devices and Integrated circuits Spring, 2006 University of Illinois at Chicago Lecture -2 Semiconductor physics band structures and charge carriers 1. What are the types of
More informationpn JUNCTION THE SHOCKLEY MODEL
The pn Junction: The Shockley Model ( S. O. Kasap, 1990-001) 1 pn JUNCTION THE SHOCKLEY MODEL Safa Kasap Department of Electrical Engineering University of Saskatchewan Canada Although the hole and its
More informationSemiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr.
Semiconductor Devices and Circuits Fall 2003 Midterm Exam Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering Name: Mat. -Nr.: Guidelines: Duration of the Midterm: 1 hour The exam is a closed
More information8. Schottky contacts / JFETs
Technische Universität Graz Institute of Solid State Physics 8. Schottky contacts / JFETs Nov. 21, 2018 Technische Universität Graz Institute of Solid State Physics metal - semiconductor contacts Photoelectric
More informationClassification of Solids
Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples
More information5. Semiconductors and P-N junction
5. Semiconductors and P-N junction Thomas Zimmer, University of Bordeaux, France Summary Learning Outcomes... 2 Physical background of semiconductors... 2 The silicon crystal... 2 The energy bands... 3
More informationjunctions produce nonlinear current voltage characteristics which can be exploited
Chapter 6 P-N DODES Junctions between n-and p-type semiconductors are extremely important foravariety of devices. Diodes based on p-n junctions produce nonlinear current voltage characteristics which can
More informationThe Three terminal MOS structure. Semiconductor Devices: Operation and Modeling 115
The Three terminal MOS structure 115 Introduction MOS transistor two terminal MOS with another two opposite terminal (back to back of inversion layer). Theses two new terminal make the current flow if
More informationan introduction to Semiconductor Devices
an introduction to Semiconductor Devices Donald A. Neamen Chapter 6 Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor Introduction: Chapter 6 1. MOSFET Structure 2. MOS Capacitor -
More informationTheory of Electrical Characterization of Semiconductors
Theory of Electrical Characterization of Semiconductors P. Stallinga Universidade do Algarve U.C.E.H. A.D.E.E.C. OptoElectronics SELOA Summer School May 2000, Bologna (It) Overview Devices: bulk Schottky
More informationA study of the silicon Bulk-Barrier Diodes designed in planar technology by means of simulation
Journal of Engineering Science and Technology Review 2 (1) (2009) 157-164 Research Article JOURNAL OF Engineering Science and Technology Review www.jestr.org A study of the silicon Bulk-Barrier Diodes
More informationIntroductory Nanotechnology ~ Basic Condensed Matter Physics ~
Introductory Nanotechnology ~ Basic Condensed Matter Physics ~ Atsufumi Hirohata Department of Electronics Quick Review over the Last Lecture Classic model : Dulong-Petit empirical law c V, mol 3R 0 E
More informationBasic Principles of Light Emission in Semiconductors
Basic Principles of Light Emission in Semiconductors Class: Integrated Photonic Devices Time: Fri. 8:00am ~ 11:00am. Classroom: 資電 06 Lecturer: Prof. 李明昌 (Ming-Chang Lee) Model for Light Generation and
More informationAvalanche breakdown. Impact ionization causes an avalanche of current. Occurs at low doping
Avalanche breakdown Impact ionization causes an avalanche of current Occurs at low doping Zener tunneling Electrons tunnel from valence band to conduction band Occurs at high doping Tunneling wave decays
More informationEE 6313 Homework Assignments
EE 6313 Homework Assignments 1. Homework I: Chapter 1: 1.2, 1.5, 1.7, 1.10, 1.12 [Lattice constant only] (Due Sept. 1, 2009). 2. Homework II: Chapter 1, 2: 1.17, 2.1 (a, c) (k = π/a at zone edge), 2.3
More informationECE 142: Electronic Circuits Lecture 3: Semiconductors
Faculty of Engineering ECE 142: Electronic Circuits Lecture 3: Semiconductors Agenda Intrinsic Semiconductors Extrinsic Semiconductors N-type P-type Carrier Transport Drift Diffusion Semiconductors A semiconductor
More informationSchottky diodes. JFETs - MESFETs - MODFETs
Technische Universität Graz Institute of Solid State Physics Schottky diodes JFETs - MESFETs - MODFETs Quasi Fermi level When the charge carriers are not in equilibrium the Fermi energy can be different
More informationSemiconductor Module
Semiconductor Module Optics Seminar July 18, 2018 Yosuke Mizuyama, Ph.D. COMSOL, Inc. The COMSOL Product Suite Governing Equations Semiconductor Schrödinger Equation Semiconductor Optoelectronics, FD Semiconductor
More informationBipolar junction transistor operation and modeling
6.01 - Electronic Devices and Circuits Lecture 8 - Bipolar Junction Transistor Basics - Outline Announcements Handout - Lecture Outline and Summary; Old eam 1's on Stellar First Hour Eam - Oct. 8, 7:30-9:30
More information