Table of Contents. Volume 6 Number 6 June Analysis on Sixth-Order Compact Approximations with Richardson Extrapolation for 2D Poisson Equation

Size: px
Start display at page:

Download "Table of Contents. Volume 6 Number 6 June Analysis on Sixth-Order Compact Approximations with Richardson Extrapolation for 2D Poisson Equation"

Transcription

1

2

3 Journal of Applied Mathematics and Physics, 2018, 6, ISSN Online: ISSN Print: Table of Contents Volume 6 Number 6 June 2018 Analysis on Sixth-Order Compact Approximations with Richardson Extrapolation for 2D Poisson Equation R. X. Dai, P. P. Lin Differential Integrals of Curves and Inversion of Magnetic Source Morphology J. X. Cai BTZ Quasinormal Frequencies as Poles of Green s Function A. López-Ortega, D. Mata-Pacheco Quantum Local Causality in Non-Metric Space F. Ruzzene Least Squares Hermitian Problem of Matrix Equation (AXB, CXD) = (E, F) Associated with Indeterminate Admittance Matrices Y. F. Liang, S. F. Yuan, Y. Tian, M. Z. Li Revenue Optimization of Pipelines Construction and Operation Management Based on Quantum Genetic Algorithm and Simulated Annealing Algorithm K. Tan Reply to Critical Comments on the Paper On the Logical Inconsistency of the Special Theory of Relativity S. J. Crothers Extended Koopmans Approximation for CASDFT Exchange-Correlation Functional S. Gusarov, Y. Dmitriev Applications of Fractional Calculus to Newtonian Mechanics G. U. Varieschi Flow of Generalized Burgers Fluid Induced by Sawtooth Pulses Stress with Quadratic Edges Q. Sultan, Z. Un Nisa, M. Nazar Conditional Events and Quantum Logic P. G. Calabrese The Atom Model of Helium and of Neon Based on the Theorem of Niels Bohr T. Allmendinger

4 Journal of Applied Mathematics and Physics, 2018, 6, ISSN Online: ISSN Print: The Relation among the Solar Activity, the Total Ozone, QBO, NAO, and ENSO by Wavelet-Based Multifractal Analysis F. Maruyama Nanoparticle Charge in Fluid from Atomic Force Microscopy Forces within the Nonlinear Poisson-Boltzmann Equation F. R. Zypman Adsorption of Gold on Iridium K. I. Hashim Earth s Serious Anisotropy, Non-Inertiality, Ether, Gain of Free Energy, Revealed, Part 2 P. T. Pappas, B. I. Jones, T. P. Pappas, L. P. Pappas Two New Integrable Hierarchies and Their Nonlinear Integrable Couplings H. Chang, Y. X. Li Optimal Estimate of Quantum States M. Mastriani About an Ambiguity Appearing on the Hamiltonian Formulation of Quantum Mechanics G. V. López, A. Griselda, C. R. Martínez-Prieto The Dynamics of an Impulsive Competitive System with Infinite Delay and Diffusion H. R. Chen, Y. F. Shao

5 Journal of Applied Mathematics and Physics (JAMP) Journal Information SUBSCRIPTIONS The Journal of Applied Mathematics and Physics (Online at Scientific Research Publishing, is published monthly by Scientific Research Publishing, Inc., USA. Subscription rates: Print: $39 per issue. To subscribe, please contact Journals Subscriptions Department, SERVICES Advertisements Advertisement Sales Department, Reprints (minimum quantity 100 copies) Reprints Co-ordinator, Scientific Research Publishing, Inc., USA. COPYRIGHT Copyright and reuse rights for the front matter of the journal: Copyright 2018 by Scientific Research Publishing Inc. This work is licensed under the Creative Commons Attribution International License (CC BY). Copyright for individual papers of the journal: Copyright 2018 by author(s) and Scientific Research Publishing Inc. Reuse rights for individual papers: Note: At SCIRP authors can choose between CC BY and CC BY-NC. Please consult each paper for its reuse rights. Disclaimer of liability Statements and opinions expressed in the articles and communications are those of the individual contributors and not the statements and opinion of Scientific Research Publishing, Inc. We assume no responsibility or liability for any damage or injury to persons or property arising out of the use of any materials, instructions, methods or ideas contained herein. We expressly disclaim any implied warranties of merchantability or fitness for a particular purpose. If expert assistance is required, the services of a competent professional person should be sought. PRODUCTION INFORMATION For manuscripts that have been accepted for publication, please contact: jamp@scirp.org

6

7

Table of Contents. Volume 5 Number 1 January 2015

Table of Contents. Volume 5 Number 1 January 2015 Advances in Materials Physics and Chemistry, 2015, 5, 1-45 Published Online January 2015 in SciRes. http://www.scirp.org/journal/ampc Table of Contents Volume 5 Number 1 January 2015 Carrier Dynamics of

More information

Table of Contents. Volume 5 Number 14 August D.-Y. Chung G. G. Nyambuya A. Georgiou L. D. Vuong, P. D. Gio...

Table of Contents. Volume 5 Number 14 August D.-Y. Chung G. G. Nyambuya A. Georgiou L. D. Vuong, P. D. Gio... Journal of Modern Physics, 2014, 5, 1223-1396 Published Online August 2014 in SciRes. http://www.scirp.org/journal/jmp Table of Contents Volume 5 Number 14 August 2014 Magnetic Hysteresis and Complex Initial

More information

Table of Contents. Volume 7 Number 6 December 2015

Table of Contents. Volume 7 Number 6 December 2015 Journal of Geographic Information System, 2015, 7, 565-709 Published Online December 2015 in SciRes. http://www.scirp.org/journal/jgis Table of Contents Volume 7 Number 6 December 2015 Spatial Assessment

More information

Table of Contents. Volume 7 Number 4 August 2015

Table of Contents. Volume 7 Number 4 August 2015 Journal of Geographic Information System, 2015, 7, 319-463 Published Online August 2015 in SciRes. http://www.scirp.org/journal/jgis Table of Contents Volume 7 Number 4 August 2015 Future Land-Use Land-Cover

More information

TABLE OF CONTENTS. Volume 3 Number 4 November 2013

TABLE OF CONTENTS. Volume 3 Number 4 November 2013 World Journal of Condensed Matter Physics, 2013, 3, 159-220 Published Online November 2013 in SciRes (http://www.scirp.org/journal/wjcmp/) TABLE OF CONTENTS Volume 3 Number 4 November 2013 The Role of

More information

Table of Contents. Volume 7 Number 3 March 2016

Table of Contents. Volume 7 Number 3 March 2016 International Journal of Geosciences, 2016, 7, 239-458 Published Online March 2016 in SciRes. http://www.scirp.org/journal/ijg Table of Contents Volume 7 Number 3 March 2016 Paleogeographic Reconstitution

More information

TABLE OF CONTENTS. Volume 1 Number 1 September 2013

TABLE OF CONTENTS. Volume 1 Number 1 September 2013 International Journal of Analytical Mass Spectrometry and Chromatography, 2013, 1, 1-80 Published Online September 2013 in SciRes (http://www.scirp.org/journal/ijamsc/) TABLE OF CONTENTS Volume 1 Number

More information

American Journal of Analytical Chemistry, 2011, 2, Published Online October 2011 in SciRes (

American Journal of Analytical Chemistry, 2011, 2, Published Online October 2011 in SciRes ( 9 772156 825004 06 American Journal of Analytical Chemistry, 2011, 2, 639-738 Published Online October 2011 in SciRes (http://www.scirp.org/journal/ajac/) TABLE OF CONTENTS Volume 2 Number 6 October 2011

More information

TABLE OF CONTENTS. Volume 2 Number 2 June Performance and Challenges in Utilizing Non-Intrusive Sensors for Traffic Data Collection

TABLE OF CONTENTS. Volume 2 Number 2 June Performance and Challenges in Utilizing Non-Intrusive Sensors for Traffic Data Collection Advances in Remote Sensing, 2013, 2, 45-204 Published Online June 2013 in SciRes (http://www.scirp.org/journal/ars/) TABLE OF CONTENTS Volume 2 Number 2 June 2013 Performance and Challenges in Utilizing

More information

Table of Contents. Volume 2 Number 3 June 2014

Table of Contents. Volume 2 Number 3 June 2014 Journal of Geoscience and Environment Protection, 2014, 2, 1-189 Published Online June 2014 in SciRes. http://www.scirp.org/journal/gep Table of Contents Volume 2 Number 3 June 2014 An Experimental Study

More information

Filter Inductors, High Current, Radial Leaded

Filter Inductors, High Current, Radial Leaded Filter Inductors, High Current, Radial Leaded ELECTRICAL SPECIFICATIONS Inductance: Measured at 1.0 V with zero DC current Dielectric: 2500 V RMS between winding and 0.250" [6.35 mm] of insulating covering

More information

Aluminum Capacitors FEATURES APPLICATIONS PACKAGING

Aluminum Capacitors FEATURES APPLICATIONS PACKAGING Aluminum Capacitors FEATURES Load life: 2000 h at 105 C Extra low impedance, high ripple current Polarized SMD aluminum electrolytic capacitors, non solid electrolyte Material categorization: for definitions

More information

Through Hole Transformers, Pulse, Trigger Type

Through Hole Transformers, Pulse, Trigger Type Through Hole Transformers, Pulse, Trigger Type STANDARD ELECTRICAL SPECIFICATIONS PRIMARY IND. MIN. (mh) PRIMARY DCR MAX. ( ) Notes () Hipot voltage will meet international safety standards () Low profile

More information

INTEGRATED CIRCUITS. 74F521 8-bit identity comparator. Product specification May 15. IC15 Data Handbook

INTEGRATED CIRCUITS. 74F521 8-bit identity comparator. Product specification May 15. IC15 Data Handbook INTEGRATED CIRCUITS 1990 May IC Data Handbook FEATURES Compares two 8-bit words in 6.5ns typical Expandable to any word length DESCRIPTION The is an expandable 8-bit comparator. It compares two words of

More information

PHD/PHP36N03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 General description. 1.

PHD/PHP36N03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 General description. 1. Rev. 2 8 June 26 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2

More information

Aluminum Capacitors FEATURES APPLICATIONS PACKAGING

Aluminum Capacitors FEATURES APPLICATIONS PACKAGING Aluminum Capacitors QUICK REFERENCE DATA DESCRIPTION VALUE Nominal case size (Ø D x L in mm) 4 x 5.3 to 12.5 x 13.5 Rated capacitance range, 10 μf to 2200 μf Capacitance tolerance ± 20 % Rated voltage

More information

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Rev. 0 26 September 2006 Product data sheet. Product profile. General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package..2

More information

PC Card (PCMCIA) Interface Switch

PC Card (PCMCIA) Interface Switch End of Life. Last Available Purchase Date is 3-Dec-204 Si9706DY PC Card (PCMCIA) Interface Switch FEATURES Single SO-8 Package CMOS-Logic Compatible Inputs Slow V CC Ramp Time Smart Switching Extremely

More information

Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance FEATURES Long useful life: up to 5000 h at 105 C Very low ESR and highest ripple current SMD-version with base plate, lead (Pb) free reflow

More information

FHR

FHR FHR 2- FEATURES Resistances from 0.001 Ohm to 0.01 Ohms Power rating to Watt Resistance tolerances to ±1% TCR to ±30 ppm/k Load stability to 0.5% Customized resistance values TABLE 1 SPECIFICATIONS TYPE

More information

Aluminum Capacitors SMD (Chip), High Temperature

Aluminum Capacitors SMD (Chip), High Temperature Not Recommended for New Designs, Use 50 CR Aluminum Capacitors SMD (Chip), High Temperature 50 CL 53 CRV Lead (Pb)-free 40 CLH 5 C high temperature 53 CLV Fig. low 50 CL QUICK REFERENCE DATA DESCRIPTION

More information

Aluminum Electrolytic Capacitors Power Long Life Snap-In

Aluminum Electrolytic Capacitors Power Long Life Snap-In Aluminum Electrolytic Capacitors Power Long Life Snap-In PUL-SI smaller dimensions 0/0 PLL-SI Fig. QUICK REFERENCE DATA DESCRIPTION VALUE 0 0 Nominal case sizes (Ø D x L in mm) x to x 0 Rated capacitance

More information

Applied Regression Modeling

Applied Regression Modeling Applied Regression Modeling Applied Regression Modeling A Business Approach Iain Pardoe University of Oregon Charles H. Lundquist College of Business Eugene, Oregon WILEY- INTERSCIENCE A JOHN WILEY &

More information

SMD Aluminum Solid Capacitors with Conductive Polymer

SMD Aluminum Solid Capacitors with Conductive Polymer SMD Aluminum Solid Capacitors with Conductive Polymer FEATURES New OS-CON series provides improved characteristics with up to 25 C temperature capability and 35 V maximum voltage rating in a SMD package

More information

Through Hole Transformers, Pulse, Trigger Type

Through Hole Transformers, Pulse, Trigger Type Through Hole Transformers, Pulse, Trigger Type STANDARD ELECTRICAL SPECIFICATIONS PRIMARY IND. MIN. (mh) PRIMARY DCR MAX. ( ) Notes () Hipot voltage will meet international safety standards () Low profile

More information

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET Rev. 2 3 November 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

Single Phase Fast Recovery Bridge (Power Modules), 61 A

Single Phase Fast Recovery Bridge (Power Modules), 61 A VS-SA6BA60 Single Phase Fast Recovery Bridge (Power Modules), 6 A SOT-227 PRIMARY CHARACTERISTICS V RRM 600 V I O 6 A t rr 70 ns Type Modules - Bridge, Fast Package SOT-227 Circuit configuration Single

More information

60 V, 0.3 A N-channel Trench MOSFET

60 V, 0.3 A N-channel Trench MOSFET Rev. 01 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT2 (TO-26AB) Surface-Mounted

More information

Aluminum Electrolytic Capacitors Power Standard Miniature Snap-In

Aluminum Electrolytic Capacitors Power Standard Miniature Snap-In Aluminum Electrolytic Capacitors Power Standard Miniature Snap-In Fig. QUICK REFERENCE DATA DESCRIPTION / PUM-SI smaller dimensions 0/0 PSM-SI long life 0 C Note () A 0 V range is available on request

More information

74HC1GU04GV. 1. General description. 2. Features. 3. Ordering information. Marking. 5. Functional diagram. Inverter

74HC1GU04GV. 1. General description. 2. Features. 3. Ordering information. Marking. 5. Functional diagram. Inverter Rev. 5 1 July 27 Product data sheet 1. General description 2. Features 3. Ordering information The is a high-speed Si-gate CMOS device. It provides an inverting single stage function. The standard output

More information

INTEGRATED CIRCUITS. 74F154 1-of-16 decoder/demultiplexer. Product specification Jan 08. IC15 Data Handbook

INTEGRATED CIRCUITS. 74F154 1-of-16 decoder/demultiplexer. Product specification Jan 08. IC15 Data Handbook INTEGRATED CIRCUITS 1-of-16 decoder/demultiplexer 1990 Jan 08 IC15 Data Handbook Decoder/demultiplexer FEATURES 16-line demultiplexing capability Mutually exclusive outputs 2-input enable gate for strobing

More information

INTEGRATED CIRCUITS. 74F85 4-bit magnitude comparator. Product specification 1994 Sep 27 IC15 Data Handbook. Philips Semiconductors

INTEGRATED CIRCUITS. 74F85 4-bit magnitude comparator. Product specification 1994 Sep 27 IC15 Data Handbook. Philips Semiconductors INTEGRATED CIRCUITS 1994 Sep 27 IC15 Data Handbook Philips Semiconductors FEATURES High-impedance NPN base inputs for reduced loading (20µA in High and ow states) Magnitude comparison of any binary words

More information

Aluminum Electrolytic Capacitors Power Economic Printed Wiring

Aluminum Electrolytic Capacitors Power Economic Printed Wiring Aluminum Electrolytic Capacitors Power Economic Printed Wiring 0/0 PECPW 00/0 PEDPW Fig. QUICK REFERENCE DATA DESCRIPTION high ripple current 0/0 PECPW long life 0 C Nominal case size (Ø D x L in mm) Rated

More information

Energy Conservation and Gravitational Wavelength Effect of the Gravitational Propagation Delay Analysis

Energy Conservation and Gravitational Wavelength Effect of the Gravitational Propagation Delay Analysis Journal of Applied Mathematics and Physics, 07, 5, 9-9 http://www.scirp.org/journal/jamp ISSN Online: 37-4379 ISSN Print: 37-435 Energy Conservation and Gravitational Wavelength Effect of the Gravitational

More information

Aluminum Electrolytic Capacitors Power Long Life Snap-In

Aluminum Electrolytic Capacitors Power Long Life Snap-In Aluminum Electrolytic Capacitors Power Long Life Snap-In PUL-SI smaller dimensions 0/0 PLL-SI Fig. QUICK REFERENCE DATA DESCRIPTION VALUE 0 0 Nominal case sizes (Ø D x L in mm) x to x 0 Rated capacitance

More information

PHB108NQ03LT. N-channel TrenchMOS logic level FET

PHB108NQ03LT. N-channel TrenchMOS logic level FET Rev. 4 2 February 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Rev. 24 March 29 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package

More information

Powered-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Powered-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) Powered-off Protection,, 1. V to 5.5 V, SPDT Analog Switch (:1 Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for 1. V to 5.5 V operation with

More information

INTEGRATED CIRCUITS. 74F804, 74F1804 Hex 2-input NAND drivers. Product specification Sep 14. IC15 Data Handbook

INTEGRATED CIRCUITS. 74F804, 74F1804 Hex 2-input NAND drivers. Product specification Sep 14. IC15 Data Handbook INTEGRATED CIRCUITS F0, F0 0 Sep IC5 Data Handbook F0/0 FEATURES High capacitive drive capability Choice of configuration Corner V CC and GND F0 Center V CC and GND F0 Typical propagation delay of.5ns

More information

Temperature range Name Description Version XC7SET32GW 40 C to +125 C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1.

Temperature range Name Description Version XC7SET32GW 40 C to +125 C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1. Rev. 01 3 September 2009 Product data sheet 1. General description 2. Features 3. Ordering information is a high-speed Si-gate CMOS device. It provides a 2-input OR function. Symmetrical output impedance

More information

Small Gage Pressure Sensor

Small Gage Pressure Sensor Small Gage Pressure Sensor FEATURES Improved stability with integrated field shields Small SO8 surface-mount package 90 millivolt output Constant current or constant voltage drive Ported configuration

More information

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

SPECIFICATIONS (T J = 25 C, unless otherwise noted) N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin

More information

Molded Metal Film High Stability (< 0.25 % after 1000 h) High Temperature (up to 175 C) Precision Resistors

Molded Metal Film High Stability (< 0.25 % after 1000 h) High Temperature (up to 175 C) Precision Resistors Molded Metal Film High Stability (< 0.25 % after 1000 h) High Temperature (up to 175 C) Precision Resistors The performance of the resistors exceed the requirements of NF C 83230 standards. They are particularly

More information

INTEGRATED CIRCUITS. 74ALS30A 8-Input NAND gate. Product specification 1991 Feb 08 IC05 Data Handbook

INTEGRATED CIRCUITS. 74ALS30A 8-Input NAND gate. Product specification 1991 Feb 08 IC05 Data Handbook INTEGRATED CIRCUITS -Input NAND gate 1991 Feb 0 IC05 Data Handbook TPE TPICAL PROPAGATION DELA TPICAL SUPPL CURRENT (TOTAL) 5.0ns 0.5mA PIN CONFIGURATION A 1 B 2 14 13 V CC NC ORDERING INFORMATION C 3

More information

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device

More information

Automotive N- and P-Channel 100 V (D-S) 175 C MOSFET

Automotive N- and P-Channel 100 V (D-S) 175 C MOSFET SQJ57EP Automotive N- and P-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY N-CHANNEL P-CHANNEL V DS (V) - R DS(on) ( ) at V GS = ± V.45 46 R DS(on) ( ) at V GS = ± 4.5 V.58.265 I D (A) 5-9.5 Configuration

More information

OEM Silicon Pressure Die

OEM Silicon Pressure Die OEM Silicon Pressure Die SM9520 Series FEATURES High volume, cost effective Gauge configuration Constant current or constant voltage drive Millivolt output Available in 0.15, 0.60 & 1.50 PSIG full-scale

More information

2-input EXCLUSIVE-OR gate

2-input EXCLUSIVE-OR gate Rev. 01 7 September 2009 Product data sheet 1. General description 2. Features 3. Ordering information is a high-speed Si-gate CMOS device. It provides a 2-input EXCLUSIVE-OR function. Symmetrical output

More information

Fusible Carbon Film MELF Resistors

Fusible Carbon Film MELF Resistors Fusible Carbon Film MELF Resistors FEATURES Fusible resistor for constant voltage designed for overload protection Special trimming to provide the fusing characteristic Flame retardant coating Pure tin

More information

150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor

150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor Rev. 0 November 2009 Product data sheet. Product profile. General description NPN high-voltage low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted

More information

2N7002T. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.

2N7002T. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1. Rev. 1 17 November 25 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features

More information

74HC2G16; 74HCT2G16. The 74HC2G16; 74HCT2G16 is a high-speed Si-gate CMOS device. The 74HC2G16; 74HCT2G16 provides two buffers.

74HC2G16; 74HCT2G16. The 74HC2G16; 74HCT2G16 is a high-speed Si-gate CMOS device. The 74HC2G16; 74HCT2G16 provides two buffers. Rev. 1 2 November 2015 Product data sheet 1. General description The is a high-speed Si-gate CMOS device. The provides two buffers. 2. Features and benefits 3. Ordering information Wide supply voltage

More information

Aluminum Electrolytic Capacitors Axial High Temperature High Voltage for E.L.B.

Aluminum Electrolytic Capacitors Axial High Temperature High Voltage for E.L.B. Aluminum Electrolytic Capacitors Axial High Temperature High Voltage for E.L.B. 04-043 ASH standard 04/043 AHH-ELB 550 V/4 h Fig. 85 C 04/043 AMH-ELB 550 V/4 h FEATURES Useful life: 0 000 h at 05 C Stable

More information

TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.

TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package. M3D88 Rev. 2 2 November 21 Product data 1. Description in a plastic package using TrenchMOS 1 technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level

More information

Double Metallized Polypropylene Film Capacitor Radial AC and Pulse Capacitor

Double Metallized Polypropylene Film Capacitor Radial AC and Pulse Capacitor End of Life September 018 - Alternative Device: MMKP8 Double Metallized Polypropylene Film Capacitor Radial AC and Pulse Capacitor FEATURES Material categorization: for definitions of compliance please

More information

N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance

N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance Rev. 2 3 February 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

Geomap Downloading and changes in New Version

Geomap Downloading and changes in New Version 1 Geomap Downloading and changes in New Version 1.9.10.0 14 June 2014 William O'Connor and Udo Kaschner about-us.html 2 Published by: William O'Connor PO Box 2207 Clarkson Western Australia http://www.gold-prospecting-wa.com

More information

I F = 1 A, T j = 25 C I F = 1 A, T j = 175 C V R = 650 V, T j = 25 C 1 10 V R = 650 V, T j = 175 C di F /dt = 200 A/μs

I F = 1 A, T j = 25 C I F = 1 A, T j = 175 C V R = 650 V, T j = 25 C 1 10 V R = 650 V, T j = 175 C di F /dt = 200 A/μs Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive

More information

HEF4028B. 1. General description. 2. Features. 3. Applications. 4. Ordering information. BCD to decimal decoder

HEF4028B. 1. General description. 2. Features. 3. Applications. 4. Ordering information. BCD to decimal decoder Rev. 06 25 November 2009 Product data sheet 1. General description 2. Features 3. Applications The is a 4-bit, a 4-bit BCO to octal decoder with active LOW enable or an 8-output (Y0 to Y7) inverting demultiplexer.

More information

Small Absolute Pressure Sensor

Small Absolute Pressure Sensor Small Absolute Pressure Sensor SM5420E Series FEATURES Improved stability with integrated field shields Small SO8 surface-mount package 95 millivolt span Constant current or constant voltage drive or non-ported

More information

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- FL Weight: approx. 9. mg Packaging codes/options: 08/K per 7" reel (8 mm tape), 8K/box FEATURES Silicon epitaxial planar diode Fast switching

More information

BUK9Y53-100B. N-channel TrenchMOS logic level FET. Table 1. Pinning Pin Description Simplified outline Symbol 1, 2, 3 source (S) 4 gate (G)

BUK9Y53-100B. N-channel TrenchMOS logic level FET. Table 1. Pinning Pin Description Simplified outline Symbol 1, 2, 3 source (S) 4 gate (G) Rev. 1 3 August 27 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive

More information

PSMN005-75B. N-channel TrenchMOS SiliconMAX standard level FET. High frequency computer motherboard DC-to-DC convertors

PSMN005-75B. N-channel TrenchMOS SiliconMAX standard level FET. High frequency computer motherboard DC-to-DC convertors Rev. 1 16 November 29 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS

More information

Aluminum Capacitors Power Standard Miniature Snap-In

Aluminum Capacitors Power Standard Miniature Snap-In Aluminum Capacitors Power Standard Miniature Snap-In Fig. QUICK REFERENCE DATA DESCRIPTION / PUM-SI smaller dimensions 0/0 PSM-SI long life 0 C Note () A 0 V range is available on request 0/0 PLL-SI VALUE

More information

AC and Pulse Film/Foil Capacitors Radial Potted Type

AC and Pulse Film/Foil Capacitors Radial Potted Type KP186 AC and Pulse Film/Foil Capacitors Radial Potted Type FEATURES Material categorization: For definitions of compliance please see www.vishay.com/doc?9991 APPLICATIONS High voltage, very high current

More information

Small, Gauge Pressure Sensor

Small, Gauge Pressure Sensor Small, Gauge Pressure Sensor SM5G-GG Series FEATURES Improved stability with integrated field shields Small SO8 surface-mount package 90 millivolt output Constant current or constant voltage drive Ported

More information

74HC30; 74HCT General description. 2. Features and benefits. 3. Ordering information. 8-input NAND gate

74HC30; 74HCT General description. 2. Features and benefits. 3. Ordering information. 8-input NAND gate Rev. 7 2 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is an. Inputs include clamp diodes. This enables the use of current limiting resistors

More information

Aluminum Capacitors Power Printed Wiring Style

Aluminum Capacitors Power Printed Wiring Style FEATURES Polarized aluminum electrolytic capacitors, non-solid electrolyte Large types, cylindrical aluminum case, insulated Provided with keyed polarity Very long useful life: 000 h at 8 C Low ESR, high

More information

Optocoupler, Phototransistor Output, no Base Connection

Optocoupler, Phototransistor Output, no Base Connection Optocoupler, Phototransistor Output, no Base Connection FEATURES A C NC 1 2 3 6 5 4 NC C E Isolation test voltage, 5 V RMS No base terminal connection for improved common mode interface immunity Long term

More information

Aluminum Electrolytic Capacitors Radial Semi-Professional

Aluminum Electrolytic Capacitors Radial Semi-Professional Aluminum Electrolytic Capacitors Radial Semi-Professional 03 RLC low leakage current 8 RUS higher CV- values miniaturized 038 RSU ig. longer life RLL QUICK REERENCE DATA DESCRIPTION VALUE Nominal case

More information

Automotive N- and P-Channel 40 V (D-S) 175 C MOSFET

Automotive N- and P-Channel 40 V (D-S) 175 C MOSFET SQJ54EP Automotive N- and P-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D D 4 G 3 S G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:

More information

BCM857BV; BCM857BS; BCM857DS

BCM857BV; BCM857BS; BCM857DS BCM857BV; BCM857BS; BCM857DS Rev. 05 27 June 2006 Product data sheet 1. Product profile 1.1 General description in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated

More information

Aluminum Capacitors SMD (Chip) Long Life Vertical

Aluminum Capacitors SMD (Chip) Long Life Vertical Not for New Designs - Alternative Device: 53 CRV 53 CLV 40 CLH FEATURES Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing SMD-version with base plate, vertical construction

More information

Low Pressure Sensor Amplified Analog Output SM6295-BCM-S

Low Pressure Sensor Amplified Analog Output SM6295-BCM-S Low Pressure Sensor Amplified Analog Output SM6295-BCM-S-040-000 FEATURES Pressure range from 0 to 40 cmh 2 O 5.0 V operation Amplified analog output (10 to 90%Vdd) Compensated temperature range: 0 to

More information

case TO 252 T C = 25 C, t P = 10 ms 18

case TO 252 T C = 25 C, t P = 10 ms 18 Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive

More information

Ruggedized Electrical Double Layer Energy Storage Capacitors

Ruggedized Electrical Double Layer Energy Storage Capacitors Ruggedized Electrical Double Layer Energy Storage Capacitors FEATURES Polarized energy storage capacitor with high capacity and energy density Rated voltage: 2.7 V Available in through-hole (radial) version

More information

PSMN B. N-channel TrenchMOS SiliconMAX standard level FET. High frequency computer motherboard DC-to-DC convertors

PSMN B. N-channel TrenchMOS SiliconMAX standard level FET. High frequency computer motherboard DC-to-DC convertors Rev. 2 6 July 29 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

Energy Storage Double Layer Capacitors

Energy Storage Double Layer Capacitors 96 DLC Energy Storage Double Layer Capacitors FEATURES Polarized capacitor with high charge density, alternative product to rechargeable backup batteries Dielectric: electric double layer Radial leads,

More information

4-Line BUS-Port ESD-Protection

4-Line BUS-Port ESD-Protection 4-Line BUS-Port ESD-Protection 2397 6 5 4 1 2 3 MARKING (example only) Dot = Pin 1 marking XX = Date code YY = Type code (see table below) 2453 1 XX YY 211 FEATURES Ultra compact LLP75-6L package 4-line

More information

Medium Pressure Sensor Analog Output

Medium Pressure Sensor Analog Output Medium Pressure Sensor Analog Output SM6844-015-A-B-5-S FEATURES Analog pressure calibrated and temperature compensated output Amplified analog output Compensated temperature range: 0 to 85oC Absolute

More information

2N7002F. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.

2N7002F. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1. Rev. 3 28 April 26 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology..2 Features Logic level

More information

MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 Optocoupler, Phototransistor Output, no Base Connection

MOC8101, MOC8102, MOC8103, MOC8104, MOC8105  Optocoupler, Phototransistor Output, no Base Connection MOC80, MOC80, MOC803, MOC80, MOC80 Optocoupler, Phototransistor Output, no Base Connection i79009- DESCRIPTION The MOC80, MOC80, MOC803, MOC80, MOC80 family optocoupler consisting of a gallium arsenide

More information

Small Signal Schottky Diode FlipKY Gen 2

Small Signal Schottky Diode FlipKY Gen 2 Small Signal Schottky Diode FlipKY Gen 2 MECHNICL DT Case: CLP0603-2M X FETURES Schottky diode for high-speed switching Very low dimensions: 0.6 mm x 0.3 mm x 0.29 mm 0.2 forward current Low forward voltage

More information

PSMN004-60B. N-channel TrenchMOS SiliconMAX standard level FET. High frequency computer motherboard DC-to-DC convertors

PSMN004-60B. N-channel TrenchMOS SiliconMAX standard level FET. High frequency computer motherboard DC-to-DC convertors Rev. 2 15 December 29 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS

More information

74HC2G34; 74HCT2G34. The 74HC2G34; 74HCT2G34 is a high-speed Si-gate CMOS device. The 74HC2G34; 74HCT2G34 provides two buffers.

74HC2G34; 74HCT2G34. The 74HC2G34; 74HCT2G34 is a high-speed Si-gate CMOS device. The 74HC2G34; 74HCT2G34 provides two buffers. Rev. 01 6 October 2006 Product data sheet 1. General description 2. Features 3. Ordering information The is a high-speed Si-gate CMOS device. The provides two buffers. Wide supply voltage range from 2.0

More information

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)

More information

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET Rev. 1 22 April 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This

More information

Powered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Powered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) DGE Powered-off Protection,,.8 V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The DGE is a high performance single-pole, double-throw (SPDT) analog switch designed for.8 V to 5.5 V operation

More information

74HC1G02; 74HCT1G02. The standard output currents are half those of the 74HC02 and 74HCT02.

74HC1G02; 74HCT1G02. The standard output currents are half those of the 74HC02 and 74HCT02. Rev. 04 11 July 2007 Product data sheet 1. General description 2. Features 3. Ordering information 74HC1G02 and 74HCT1G02 are high speed Si-gate CMOS devices. They provide a 2-input NOR function. The HC

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

Aluminum Electrolytic Capacitors SMD (Chip) Long Life Vertical

Aluminum Electrolytic Capacitors SMD (Chip) Long Life Vertical Aluminum Electrolytic Capacitors SMD (Chip) Long Life Vertical FEATURES Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing SMD-version with base plate, vertical construction

More information

XC7SET General description. 2. Features. 3. Applications. Ordering information. Inverting Schmitt trigger

XC7SET General description. 2. Features. 3. Applications. Ordering information. Inverting Schmitt trigger Rev. 01 31 ugust 2009 Product data sheet 1. General description 2. Features 3. pplications is a high-speed Si-gate CMOS device. It provides an inverting buffer function with Schmitt trigger action. This

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET P-Channel 3 V (-) MOFET 8 7 O-8 ingle 5 FEATURE TrenchFET Gen III p-channel power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 Top View PROUCT

More information

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V F = 0.3 V at I F = 5 A TMBS esmp Series FEATURES Trench MOS Schottky technology Very low profile - typical height of.7

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (-) MOFET i443y 8 7 6 O-8 ingle Top View PROUCT UMMARY V (V) -2 R (on) max. () at V G = -4. V.4 R (on) max. () at V G = -2. V.2 R (on) max. () at V G = -.8 V.3 Q g typ. (nc) 39 I (A) -.4

More information

Silicon N-channel dual gate MOS-FET IMPORTANT NOTICE. use

Silicon N-channel dual gate MOS-FET IMPORTANT NOTICE.  use Rev. 4 2 November 27 Product data sheet IMPORTANT NOTICE Dear customer, As from October st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets

More information

PC Card (PCMCIA) Dual Interface Switch

PC Card (PCMCIA) Dual Interface Switch Product is End of Life 3/204 Si9707 PC Card (PCMCIA) Dual Interface Switch DESCRIPTION The Si9707 offers an integrated solution for dual PC Card power interfaces that require only V CC switching. This

More information

74HC1G86; 74HCT1G86. 2-input EXCLUSIVE-OR gate. The standard output currents are half those of the 74HC/HCT86.

74HC1G86; 74HCT1G86. 2-input EXCLUSIVE-OR gate. The standard output currents are half those of the 74HC/HCT86. Rev. 04 20 July 2007 Product data sheet 1. General description 2. Features 3. Ordering information 74HC1G86 and 74HCT1G86 are high-speed Si-gate CMOS devices. They provide a 2-input EXCLUSIVE-OR function.

More information

2-input AND gate with open-drain output. The 74AHC1G09 is a high-speed Si-gate CMOS device.

2-input AND gate with open-drain output. The 74AHC1G09 is a high-speed Si-gate CMOS device. 74HC1G09 Rev. 02 18 December 2007 Product data sheet 1. General description 2. Features 3. Ordering information The 74HC1G09 is a high-speed Si-gate CMOS device. The 74HC1G09 provides the 2-input ND function

More information

Arrow Pushing in Organic Chemistry

Arrow Pushing in Organic Chemistry Arrow Pushing in Organic Chemistry An Easy Approach to Understanding Reaction Mechanisms Daniel E. Levy Arrow Pushing in Organic Chemistry Arrow Pushing in Organic Chemistry An Easy Approach to Understanding

More information