2014 年 8 月微纳电子技术第 51 卷第 8 期 Micronanoelectronic Technology Vol.51 No.8August 2014 硅纳米晶存储器的耐受性研究姜丹丹 1,2, 霍宗亮 2, 靳磊 2, 杨潇楠 2, 王永 2, 刘明 2

Transcription

1 2014 年 8 月微纳电子技术第 51 卷第 8 期 Micronanoelectronic Technology Vol.51 No.8August 2014 硅纳米晶存储器的耐受性研究姜丹丹 1,2, 霍宗亮 2, 靳磊 2, 杨潇楠 2, 王永 2, 刘明 2 (1. 成都信息工程学院通信工程学院, 成都 ; 2. 中国科学院微电子研究所, 北京 ) 摘要 : 首先介绍了硅纳米晶粒的制备工艺以及硅纳米晶存储器件的基本特性 接着重点探讨了硅纳米晶存储器耐久性退化的物理机制, 发现应力引起的界面陷阱是耐受性退化的主要原因 随后, 同时采用多种分析手段, 如电荷泵法和 CV 曲线分析法对界面陷阱的退化机理进行了更深入细致的研究 从界面陷阱在禁带中的能级分布中发现, 相较于未施加应力时界面陷阱的双峰分布, 施加应力后产生了新的 Pb1 中心的双峰 最后, 分别从降低擦写电压和对载流子预热的角度提出了三种新的编程方法, 有效提高了硅纳米晶存储器件的耐受性 关键词 : 硅纳米晶存储器 ; 耐受性 ; 界面陷阱 ; 能级分布 ; 退化中图分类号 :TB383;TN 文献标识码 :A 文章编号 : (2014) Endurance Research on the Silicon Nano Crystal Memory Jiang Dandan1,2, Huo Zongliang2, Jin Lei2, Yang Xiaonan2, Wang Yong2, Liu Ming2 (1. College of Communication Engineering, Chengdu University of Information Technology, Chengdu , China; 2. Institute of Microelectronics, Chinese Academy of Sciences, Beijing , China) Abstract:The preparation technology of the silicon nano crystal and the basic characteristic of the silicon nano crystal memory are introduced firstly. Then the physical mechanism of the silicon nano crystal memory endurance degradation is discussed deeply. It is found that the interface trap induced by the stress is the dominant reason of the endurance degradation. Subsequently, the degradation mechanism of the interface trap is studied in detail with various analysis methods, such as the charge pumping method and CV curve analysis method. From the energy level distribution of the interface trap in the forbidden band, it is found that compared with the double peak distribution of interface traps without the stress, the new Pb1 type double peak is generated after stressing. Finally, from the angles of the erase voltage reducing and carrier preheating, three new programming methods are proposed, and the endurance of silicon nano crystal memory devices is effectively improved. Key words:silicon nano crystal memory; endurance; interface trap; energy level distribution; degradation DOI: /j.cnki.wndz PACC:6146

2 Research Progresses and Applications of Terahertz Diodes Liu Ziyi, Yang Jianhong (Institute of Microelectronics, Lanzhou University, Lanzhou , China) Abstract:The THz device is the core of the THz technology. The basic theory, device structure and key technology of four typical THz diodes such as Schottky barrier diode, Gunn diode, impact avalanche transit time(impatt) diode and tunnel injection transit time(tunnett) diode are introduced. The main influence factors of the device performances are analyzed. The optimization and improvement measures for the device performances are presented. The characteristics of various THz diodes and the same structure THz diodes with different materials are illustrated and compared, and the advantages and disadvantages of various THz diodes are obtained. The research progresses and suitable applications of four types THz diodes are classified and summarized. Based on the device structures and advanced material characteristics, the future development directions of different THz diodes are presented, and applications and prospects of different THz diodes are described. Key words : THz; Schottky barrier diode; Gunn diode; impact avalanche transit time(impatt)diode; tunnel injection transit time(tunnett) diode; mixer; multiplier; THz source CLC number:tn31document code:aarticle ID: (2014) DOI: /j.issn EEACC:2560 太赫兹二极管的研究进展及应用刘子奕, 杨建红 ( 兰州大学微电子研究所, 兰州 ) 摘要 : 太赫兹器件是太赫兹技术的核心 介绍了肖特基势垒二极管 耿氏二极管 碰撞雪崩渡越时间 (IMPATT) 二极管以及隧道渡越时间 (TUNNETT) 二极管四种典型太赫兹二极管的基本理论 器件结构和关键技术, 分析了影响器件性能的主要因素, 给出了优化改进器件性能的措施 阐述并比较了各种太赫兹二极管的特点以及同一种结构不同材料的太赫兹二极管特性, 通过对比得出各自的优缺点及适用范围 分类总结了四种不同类型太赫兹二极管的研究进展和它们相应的应用 基于器件结构和先进的半导体材料特性, 指出了不同类型太赫兹二极管的未来发展方向, 描述了不同类型太赫兹二极管的应用和前景 关键词 : 太赫兹 (THz); 肖特基势垒二极管 ; 耿氏二极管 ; 碰撞雪崩渡越时间 (IMPATT) 二极管 ; 隧道渡越时间 (TUNNETT) 二极管 ; 混频器 ; 倍频器 ; 太赫兹源中图分类号 :TN31 文献标识码 :A 文章编号 : (2014)

3 银掺杂对 MoS2 薄膜特性的影响吴晨, 杨帆, 张熠, 吴凯, 顾伟霞, 马锡英 ( 苏州科技学院数理学院, 江苏苏州 ) 摘要 : 二硫化钼 (MoS2) 是一种具有类似石墨烯结构和性能的新型二维层状化合物, 近年来因其独特的物理化学特性而成为研究热点 采用化学气相沉积法 (CVD), 以掺杂银的 MoS2 饱和溶液为原料, 氩气为输运气体, 在 p Si 衬底上制备 MoS2 薄膜, 并研究了银掺杂对 MoS2 薄膜的表面形貌 晶体结构 光吸收特性以及电学特性的影响 研究发现, 银掺杂并未改变 MoS2 薄膜的晶体结构, 而使 MoS2 薄膜的结晶度更好 ; 银掺杂的 MoS2 薄膜反射率降低, 光吸收增强, 进而可以提高器件的光电转换效率 另外, 银掺杂的 MoS2 薄膜表面更均匀平整, 同时具有更良好的电学特性, 其电子迁移率高达 cm2 V-1 s-1, 可用于制造一些晶体管和集成电路等半导体器件 关键词 : 二硫化钼 (MoS2); 化学气相沉积 (CVD); 晶体结构 ; 光吸收特性 ; 迁移率中图分类号 :TB383 文献标识码 :A 文章编号 : (2014) Influences of Ag Doping on Properties of MoS2 Thin Films Wu Chen, Yang Fan, Zhang Yi, Wu Kai, Gu Weixia, Ma Xiying (School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou , China) Abstract:Molybdenum disulfide(mos2) is a new two dimensional layered compound with the similar structure and property of the graphene, and is becoming research focus because of its unique physical and chemical properties in recent years. Using the chemical vapor deposition (CVD) method, MoS2 thin films were deposited on p Si substrates with the Ag doped MoS2 saturated solution as a raw material and argon (Ar) gas as transport gas. The influences of the silver doping on the surface topography, crystalline structure, light absorption property and electrical property of MoS2 thin films were studied. The study shows that the silver doping does not change the crystal structure of MoS2 films, but makes the crystallinity of MoS2 films better. The optical reflectivity of the Ag doped MoS2 films is reduced, then the light absorption is enhanced, and the photoelectric conversion efficiency of the device is improved. In addition, the surfaces of Ag doped MoS2 films are more uniform and flat, and its electrical property is better. The carrier mobility of Ag doped MoS2 films is up to cm2 V-1 s-1, which can be used to fabricate transistors and integrated circuits. Key words:molybdenum disulfide (MoS2); chemical vapor deposition(cvd); crystal structure; optical adsorption property; mobility DOI: /j.cnki.wndz PACC:7360F;8115H

4 有机分子修饰的 SiNSs 电子性质的第一性原理研究吴一新 1, 杜罡 1, 梁培 1,2, 刘阳 2, 董前民 2 (1. 横店集得邦照明有限公司, 浙江金华 ; 2. 中国计量学院光学与电子科技学院, 杭州 ) 摘要 : 类石墨烯型硅纳米单层 (SiNS) 材料具有和石墨烯类似的电子性质, 由于其较强的表面活性和多表面悬挂键, 表面钝化对于其电子结构有着重要的影响 采用第一性原理的方法结合 PBE 近似, 优化了有机分子基团 (C6H13 ) 钝化的 SiNSs 的几何结构, 并计算了其电子结构 结果表明相比 H 钝化的 SiNSs 结构, 有机分子基团钝化的 SiNSs 带隙变窄, 其原因是有机分子基团的吸附打破了原有 H 钝化的结构的平衡, 使得导带中的电子下移 不同覆盖度研究表明, 随着大有机分子基团 (C6H13 ) 的增加其带隙呈现出递减趋势 关键词 : 硅纳米单层 (SiNS); 表面钝化 ; 覆盖度 ; 电子结构 ; 有机分子中图分类号 :TB383 文献标识码 :A 文章编号 : (2014) Study on the Electronic Properties of the Organic Molecule Passivated SiNSs by First Principles Wu Yixing1, Du Gang1, Liang Pei2, Liu Yang2, Dong Qianmin2 (1. Hengdian Debang Illumination Co., Ltd., Jinhua , China; 2.College of Optical and Electronic Technology, China Jiliang University, Hangzhou , China) Abstract:Graphene liked silicon nanosheet(sins) material has the similar electronic properties with the graphene. Due to the strong surface activity and many surface dangling bonds of the silicon nanosheet, the surface passivation has an important influence on the electronic structure of the silicon nanosheet. By using the first principle method with the PBE approximation, the geometric structure and electronic structure of the organic molecule (C6H13 ) passivated SiNSs were optimized and calculated, respectively. The results show that the bandgap of the organic molecule passivated SiNSs tends to narrow, of which the reason is that the absorbed organic molecule cluster breaks the balance of the original H passivation structure, and induces the electrons in the conduction band to shift down. The different coverage study results indicate that the bandgap decreases with the increase of the big organic molecule (C6H13 ). Key words:silicon nanosheet(sins); surface passivation; coverage; electronic structure; organic molecule DOI: /j.cnki.wndz PACC:6146

5 氧化钌及其复合电极的制备与性能蔡婷 a,b, 朱平 a,b, 任重 a,b, 熊继军 a,b ( 中北大学 a. 电子测试技术重点实验室 ;b. 仪器科学与动态测试教育部重点实验室, 太原 ) 摘要 : 在三氯化钌 (RuCl3) 水溶液中, 采用循环伏安法在铜电极表面电沉积氧化钌 (RuO2) 作为超级电容器电极材料 为了提高材料的电化学性能, 在电沉积液中引入了氧化石墨烯 (GO) 水溶液, 制备出 RuO2/GO 复合电极 采用扫描电镜 (SEM) 观察两种电极的表面形貌, 发现氧化钌及其复合电极经 60 干燥处理 1 h 后, 颗粒更均匀且存在明显的多孔特征, 电极材料具有良好的表面特性 电化学测试结果表明, 扫描速度为 0 1 V/s 工作电位窗口为 1 V 时, 两种电极比电容分别为 和 938 F/m2, 功率密度分别为 和 46 9 W/m2 因此,RuO2/GO 复合电极具有较好的电容特性, 适合用作超级电容器电极材料 关键词 : 电沉积 ; 氧化钌 ; 超级电容器 ; 氧化石墨烯 ; 干燥中图分类号 :O646 文献标识码 :A 文章编号 : (2014) Preparation and Performances of RuO2 and Its Composite Electrodes Cai Tinga,b, Zhu Pinga,b, Ren Zhonga,b, Xiong Jijuna,b (a.science and Technology on Electronic Test & Measurement Laboratory; b.key Laboratory of Instrumentation Science & Dynamic Measurement of Ministry of Education, North University of China, Taiyuan , China) Abstract:In ruthenium trichloride (RuCl3) aqueous solutions, hydrated ruthenium oxide (RuO2) was deposited on the copper electrode surface as the supercapacitor electrode material by the cyclic voltammetry technology. To improve the electrochemical property of the material, the electrodeposition solution was mixed with the graphene oxide (GO) aqueous solution to prepare the RuO2/GO composite electrode. The surface morphologies of two kinds of electrodes were observed by the scanning electron microscopy (SEM). It is found that after the drying treatment at 60 for 1 h, the particles of the RuO2 and its composite film electrodes are more uniform and have the obvious porous feature, and the electrode material has a good surface property. The electrochemical test results show that when the scanning speed is 0 1 V/s and the working potential window is 1 V, the specific capacitances of the two electrodes are and 938 F/m2, and the power density of two electrodes are and 46 9 W/m2, respectively. Therefore, RuO2/GO composite electrode has good capacitance characteristic and is suitable for the supercapacitor electrode. Key words:electrodeposition; ruthenium oxide; supercapacitor; graphene oxide; dried DOI: /j.cnki.wndz EEACC:0520F

6 一种非对称结构微流体混合器的设计与分析荣波 1,2, 李民权 1, 黄成军 2, 赵超 2, 罗军 2 (1. 安徽大学智能计算与信号处理重点实验室, 合肥 ; 2. 中国科学院微电子研究所微电子器件与集成技术重点实验室, 北京 ) 摘要 : 微流体混合器可以用于不同流体之间的混合与反应, 其与化学传感器结合构成的化学分析测试系统, 具有灵敏度高 响应时间短和稳定性好的特点 在微电子机械加工技术的基础上, 设计了一种新型的 具有非对称分离重组结构的微流体混合器, 并应用有限元方法建立了仿真模型, 讨论了在不同雷诺数 (Re=10~80) 下, 通道几何结构参数对微混合器内的流体流动特性和混合效率的影响 研究结果表明, 微流体在该混合器内形成了扩展涡 分离涡和迪恩 (Dean) 涡, 实现了涡系的叠加和强化, 加大了流体间的扰动, 增加了流体的接触面积, 从而大大增强了混合效率 关键词 : 微流体混合器 ; 非对称分离重组 ; 雷诺数 ; 有限元方法 ; 混合效率中图分类号 :O35; TH703 文献标识码 :A 文章编号 : (2014) Design and Analysis of an Asymmetric Structured Microfluidic Mixer Rong Bo1,2, Li Minquan1,Huang Chengjun2, Zhao Chao2, Luo Jun2 (1. Key Laboratory of Intelligent Computing and Signal Processing, Anhui University, Hefei , China; 2. Key laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing , China) Abstract:Microfluidic mixer can be used for mixing and reaction between different fluids. The chemical analysis test system consisted of the microfluidic mixer and chemical sensor has the features of high sensitivity, short response time and a good stability. Based on the microelectronic mechanical technology, a novel microfluidic mixer with the asymmetric split and recombine structure was designed, and the simulate model was built using the finite element method. The effects for the geometry parameters of the micro channel on the fluidic behavior and mixing index were discussed under different Reynolds numbers (Re=10-80). The study results indicate that the expansion vortex, separated vortex and Dean vortex are formed in the designed micromixer, the combination and enhancement of the vortex systems are achieved, the disturbance between fluids and the contact area of the fluids increase, then the mixing index significantly is enhanced. Key words:microfluidic mixer; asymmetric split and recombine; Reynolds number; finite element method; mixing index DOI: /j.cnki.wndz PACC:0340G;0710C

7 一种可调频的压电式振动能量采集器孙晓阳, 王佩红, 王卓, 夏志伟, 岳鑫, 丁旋, 石市委 ( 安徽大学物理与材料科学学院, 合肥 ) 摘要 : 提出了一种利用外加磁力来调整压电振动能量采集器共振频率的新型设计方案 该振动能量采集器主要包括一个端部带有磁性质量块的聚偏二氟乙烯 (PVDF) 悬臂梁和一个与悬臂梁在同一个平面内且可以在二维方向自由移动的外永磁体 测试表明, 在无外永磁体的情况下, 该压电振动能量采集器的共振频率为 65 Hz 引入外永磁体后, 通过调整外永磁体的竖直位置可以改变振动能量采集器的共振频率 在外永磁体与磁性质量块之间的水平距离分别为 5,10 和 15 mm 时, 共振频率的可调范围分别为 18,9 和 3 Hz 如果令外永磁体的竖直位置为零, 在与磁性质量块之间的水平距离从 2 5 mm 增加到 20 mm 的过程中, 共振频率在 51~110 Hz 变化, 可调范围达到 59 Hz 关键词 : 振动能量采集 ; 共振频率 ; 压电 ;PVDF 薄膜 ; 调频 ; 永磁体中图分类号 :TM919; TH703 文献标识码 :A 文章编号 : (2014) A Piezoelectric Vibration Energy Harvester with the Adjustable Frequency Sun Xiaoyang, Wang Peihong, Wang Zhuo, Xia Zhiwei, Yue Xin, Ding Xuan, Shi Shiwei (School of Physics and Material Science, Anhui University, Hefei , China) Abstract:A novel design using the magnetic force to adjust the resonant frequency of the piezo electric vibration energy harvester was presented. The piezoelectric vibration energy harvester with the adjustable frequency consists of a PVDF piezoelectric cantilever with the magnetic mass and a permanent magnet that is in the same plane with the cantilever beam and can move in 2 dimensions freely. The measurement results show that the resonant frequency of the piezoelectric vibration energy harvester is 65 Hz without the permanent magnet. Through adjusting the vertical position of the permanent magnet, the resonant frequency of the vibration energy harvester was changed with the permanent magnet. When the horizontal distances of the magnetic mass and permanent magnet are 5, 10 and 15 mm, the changing ranges of the resonant frequency are 18, 9 and 3 Hz, respectively. If the vertical position of the permanent magnet is 0 mm, when the horizontal distance of the magnetic mass and permanent magnet changes from 2 5 mm to 20 mm, the resonant frequency of the energy harvester is in the range of Hz and the adjustable range reaches 59 Hz. Key words:vibration energy harvesting; resonant frequency; piezoelectricity; PVDF film; adjustable frequency; permanent magnet DOI: /j.cnki.wndz EEACC:8460

8 GaAs/ Si 直接键合用 GaAs 表面化学活化技术马静, 刘雯, 杨添舒, 时彦朋, 杨富华, 王晓东 ( 中国科学院半导体研究所集成技术工程研究中心, 北京 ) 摘要 : 研究了 GaAs/Si 疏水性直接键合技术中 GaAs 表面化学活化关键工艺, 对比分析了不同体积分数的 HF 和 HCl 溶液作为表面活性处理剂时对 GaAs 表面进行活化处理的结果 发现用 HCl 和 H2O 溶液处理 GaAs 晶片得到的表面均方根粗糙度要优于用 HF 处理得到的结果, 并且将处理过的 GaAs 晶片与 Si 片进行直接键合, 发现用 HCl 进行表面活化的 GaAs 晶片与 Si 片键合的成功率要高于用 HF 进行表面活化的 GaAs 和 Si 键合 在 200,300 和 400 条件下, 采用 HCl 和 H2O 体积比为 1 10 的溶液处理的 GaAs 晶片与 Si 片都成功键合, 并且 200 条件下键合后的界面质量较好 关键词 : 疏水性 ; 直接键合 ; 清洗工艺 ; 原子力显微镜 ; 表面均方根粗糙度中图分类号 : TN305.97;TN305.2 文献标识码 :A 文章编号 : (2014) GaAs Surface Chemical Activation Technology for GaAs/Si Direct Bonding Ma Jing, Liu Wen, Yang Tianshu, Shi Yanpeng, Yang Fuhua, Wang Xiaodong (Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing ,China) Abstract:The surface chemical activation key technology of GaAs in hydrophobic GaAs/Si direct bonding was studied. The active treatment results of GaAs surfaces were compared and analyzed using surface active treatment agents of HF and HCl with different volume fractions. Then the processed GaAs wafer was bonded with the Si wafer. It is found that the root mean square roughness of GaAs wafer treated with the HCl and H2O solution is better than that with HF solution, and the bonding success rate of GaAs wafer activated with HCl and Si wafer is higher than that of GaAs wafer activated with HF and Si wafer. Under the temperatures of 200, 300 and 400, the GaAs and Si wafers can be directly bonded by the HCl and H2O solution with the volume proportion of 1 10, and the performance of the bonded interface is better at 200. Key words:hydrophobic; direct bonding; cleaning process; atomic force microscopy(afm); surface root mean square(rms) roughness DOI: /j.cnki.wndz EEACC:2550E;2520D

9 同轴电纺制备纳米纤维影响因素的研究进展邵珠帅 1, 王飞龙 1, 汪成伟 1, 汝长海 1,2 (1. 苏州大学江苏省先进机器人技术重点实验室, 江苏苏州 ; 2. 苏州大学苏州纳米科学技术协同创新中心, 江苏苏州 ) 摘要 : 同轴静电纺丝技术制备的核 - 壳复合结构纳米纤维已取得了显著成果, 在众多领域都具有较大的应用价值 通过对传统静电纺丝和同轴静电纺丝进行比较, 分析了同轴静电纺丝的特点, 并指出复合泰勒锥体和喷射流的稳定性直接影响着复合纳米纤维的形貌 重点讨论了纺丝过程中诸如黏度 浓度 电纺性 溶剂挥发性等溶液参数和流速 电压等工艺参数对核 - 壳结构纳米纤维形貌的影响作用, 并探讨了流速对纤维成丝性的影响 最后归纳了核 - 壳结构纳米纤维在能源 组织工程 传感器等领域的优势和潜在应用 关键词 : 同轴静电纺丝 ; 核 - 壳结构 ; 纺丝工艺 ; 复合结构 ; 纳米纤维中图分类号 :TQ 文献标识码 :A 文章编号 : (2014) Research Progress in Influence Factors of the Nanofiber Prepared by the Coaxial Electrospinning Shao Zhushuai1, Wang Feilong1, Wang Chengwei1, Ru Changhai1,2 (1.Jiangsu Provincial Key Laboratory of Advanced Robotics, Soochow University, Suzhou , China; 2.Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou , China) Abstract:The core shell compound nanofibers prepared by the coaxial electrospinning achieve remarkable achievements, and have good application values in many fields. By comparing the diffe rence between the ordinary electrospinning and coaxial electrospinning, the characteristics of the coaxial electrospinning are analyzed, and the morphology of the compound nanofibers directly affected by the composite Taylor cone and stability of the jet stream is indicated. The effects of solution parameters such as viscosity, density, spinnability, solvent volatility and process parameters such as flow rate and voltage on the morphology of the core shell compound nanofibers are emphatically discussed, and the effect of the flow rate on the formation of core shell structure is also discussed. Finally, the advantages and potential applications of the core shell compound nanofibers in the fields such as energy, tissue engineering and sensors are concluded. Key words:coaxial electrospinning; core shell structure; spinning process; composite structure; nanofiber DOI: /j.cnki.wndz EEACC:0560

10 LED 用图形化蓝宝石衬底的干法刻蚀工艺刘建哲 1,2, 杨新鹏 2, 彭艳亮 2, 曾建飞 2, 潘安练 1, 金良荣 2 (1. 湖南大学物理与微电子科学学院, 长沙 ; 2. 浙江东晶博蓝特光电有限公司, 浙江金华 ) 摘要 : 近年来, 图形化蓝宝石衬底 (PSS) 作为 GaN 基 LED 外延衬底材料被广泛应用 采用感应耦合等离子体 (ICP) 技术对涂覆有光刻胶阵列图案的蓝宝石衬底进行刻蚀 通过研究及优化不同 ICP 刻蚀工艺参数对刻蚀速率和选择比的影响, 分别成功制备出蒙古包形和圆锥形图形化蓝宝石衬底片, 并在其表面完成 InGaN/GaN 多量子阱外延及芯片工艺 借助光致发光和电致发光等手段测试其 LED 器件的光电学性能 实验结果发现圆锥形的图形化蓝宝石衬底拥有更强的光功率和更窄的半峰宽, 说明这种形貌的衬底在 GaN 外延时有效减少了晶格失配造成的缺陷, 提高了晶体质量, 从而更有效地增加 LED 出光效率 关键词 : 图形化蓝宝石衬底 (PSS); 干法刻蚀 ; 刻蚀速率 ; 刻蚀选择比 ; 发光二极管 (LED); GaN 外延层 ; 光致发光 (PL); 电致发光 (EL) 中图分类号 :TN304.23;TN364.2 文献标识码 :A 文章编号 : (2014) Dry Etching Process of the Patterned Sapphire Substrate for LED Liu Jianzhe1,2,Yang Xinpeng2,Peng Yanliang2,Zeng Jianfei2, Pan Anlian1,Jin Liangrong2 (1.College of Physics and Microelectronics Science, Hunan University, Changsha , China; 2. Zhejiang Dongjing Bright Opto Co., Ltd., Jinhua , China) Abstract:In recent years, the patterned sapphire substrate(pss) have been widely applied as the epitaxial substrate material for GaN based LED. Using the inductively coupled plasma(icp) technology, the sapphire substrate with photoresist pattern array was etched. By studying and optimizing the effects of different ICP process parameters on the etch rate and selectivity, the dome and cone shaped patterned sapphire substrates were prepared successfully, and epitaxial growth of the InGaN/GaN multiple quantum well on the surface of the PSS and the chip process were completed. The photoelectronic properties of the LED chips were tested by photoluminescence(pl) and electroluminescence(el) methods. The experimental results show that the light output power and full width at half maximum (FWHM) of the cone shaped PSS is better than those of the dome one, showing that in the process of epitaxial growth, the cone shaped PSS can effectively reduce the lattice mismatch defects and improve the crystal quality, and then increase the LED luminous efficiency. Key words:patterned sapphire substrate (PSS); dry etching; etch rate;etch selectivity;light emitting diode(led); epi GaN layer;photoluminescence(pl); electroluminescence(el) DOI: /j.cnki.wndz EEACC:2520D; 4250

11 液晶光学相控阵子阵列寻址电极的加工工艺尹聿海 1, 徐林 1, 王鹏 1, 罗媛 1, 杨宁 1, 史俊锋 1, 于明岩 2, 陈宝钦 2 (1. 中国南方工业研究院, 北京 ; 2. 中国科学院微电子所微细加工与纳米技术研究室, 北京 ) 摘要 : 基于液晶光学相控阵 (LCOPA) 电极基板的子阵列连接方案, 利用电子束直写和激光直写混合光刻技术, 进行了通光区域电极条纹 外围电路和子阵列联络孔的微纳米加工工艺研究 结果表明利用激光直写技术, 可以形成最小线宽 0 5 μ m 的液晶光学相控阵电极图案, 曝光时长 48 min, 具备可制造性 利用富含导电颗粒的 SX AR-PC5000/90 1 涂层, 可以有效解决电子束在绝缘玻璃基底上直写时由电荷积累所产生的电子束曝光场拼接偏移与火花放电等问题, 保证了电子束直接曝光子阵列电极上下导电层之间的联络孔套刻精度 利用特定电子束直写对准标记, 解决了绝缘体表面在混合光刻中套刻对位精度问题 关键词 : 液晶光学相控阵 (LCOPA); 微纳加工 ; 子阵列寻址 ; 电子束直写光刻 ; 激光直写光刻中图分类号 :TN 文献标识码 :A 文章编号 : (2014) Processing Technology of Sub Array Addressing Electrodes of the Liquid Crystal Optical Phased Array Yin Yuhai1, Xu Lin1, Wang Peng1, Luo Yuan1, Yang Ning1, Shi Junfeng1, Yu Mingyan2, Chen Baoqin2 (1. China South Industries Research Academy, Beijing , China;2. Micro Processing & Nano Technology Laboratory, Institute of Microelectronics, Chinese Academy of Science, Beijing , China) Abstract:Based on the sub array connection scheme of the liquid crystal optical phased array (LCOPA) electrode substrate, through the hybrid lithography combined with the electron beam lithography and laser beam lithography, the micro/nano processing technologies of the optical region electrode stripe, peripheral circuit and sub array via hole were studied. The results show that using the laser beam lithography, the LCOPA electrode pattern with the minimum linewidth of 0 5 μ m is formed and acceptable with the lithography time of about 48 min. With the SX AR-PC5000/90 1 coating containing conductive particles, the problems of the excursion of electron beam and spark discharge induced by the charge accumulation during the electron beam direct writing on the insulating glass substrate were resolved, and the overlay accuracy of the via holes be tween up and down conductive layers of sub array electrodes was ensured. Using the specific electron beam direct writing registration mark, the overlay registration accuracy problem of the insulator surface in the hybrid lithography was resolved. Key words:liquid crystal optical phased array (LCOPA);micronano manufacturing;sub array addressing; electron beam lithography; laser beam lithography DOI: /j.cnki.wndz EEACC:2550G