AON7E 3V NChannel AlphaMO General escription Latest Trench Power AlphaMO (αmo LV) technology Very Low R(on) at.v G Low Gate Charge E protection RoH and HalogenFree Compliant Product ummary V I (at V G =V) R (ON) (at V G =V) R (ON) (at V G =.V) 3V 3A < mω <.8mΩ Typical E protection HBM Class Application C/C Converters % UI Tested % R g Tested Top View FN 3x3 EP Bottom View Top View G 3 8 7 G Pin Absolute Maximum Ratings T A = C unless otherwise noted Parameter ymbol Maximum Units rainource Voltage 3 V Gateource Voltage V pike V Continuous rain T C = C 3 I Current G T C = C 7 Pulsed rain Current C Continuous rain T A = C I M Current T A =7 C 7 Avalanche Current C I A 3 Avalanche energy L=.mH C 3 Power issipation B V G I M E A ns 3 V T C = C T C = C V PIKE Junction and torage Temperature Range T J, T TG to P T A = C 3. P Power issipation A M W T A =7 C ± 3 3 V A A A mj W C Thermal Characteristics Parameter ymbol Typ Max Maximum JunctiontoAmbient A t s 3 Maximum JunctiontoAmbient A R θja teadytate 7 Maximum JunctiontoCase teadytate 3. R θjc Units C/W C/W C/W Rev: Mar www.aosmd.com Page of
AON7E Electrical Characteristics (T J = C unless otherwise noted) ymbol Parameter Conditions Min Typ Max Units TATIC PARAMETER BV rainource Breakdown Voltage I =µa, V G =V 3 V V =3V, V G =V I Zero Gate Voltage rain Current µa T J = C I G GateBody leakage current V =V, V G = ±V ± µa V G(th) Gate Threshold Voltage V =V G, I =µa..8. V R (ON) tatic rainource OnResistance V G =V, I =A V G =.V, I =A 3. T J = C..3.8 mω g F Forward Transconductance V =V, I =A V iode Forward Voltage I =A,V G =V.7 V I Maximum Bodyiode Continuous Current G 3 A YNAMIC PARAMETER C iss Input Capacitance pf C oss Output Capacitance V G =V, V =V, f=mhz 8 pf C rss Reverse Transfer Capacitance 8 pf R g Gate resistance V G =V, V =V, f=mhz.8.7. Ω WITCHING PARAMETER Q g (V) Total Gate Charge 33. nc Q g (.V) Total Gate Charge 9.7 7 nc V G =V, V =V, I =A Q gs Gate ource Charge 3.3 nc Q gd Gate rain Charge. nc t (on) TurnOn elaytime 7 ns t r TurnOn Rise Time V G =V, V =V, R L =.7Ω, 8.3 ns t (off) TurnOff elaytime R GEN =3ΩΩ ns t f TurnOff Fall Time ns t rr Body iode Reverse Recovery Time I F =A, di/dt=a/µs. ns Q rr Body iode Reverse Recovery Charge I F =A, di/dt=a/µs. nc A. The value of R θja is measured with the device mounted on in FR board with oz. Copper, in a still air environment with T A = C. The Power dissipation P M is based on R θja and the maximum allowed junction temperature of C. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T J(MAX) = C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) = C. Ratings are based on low frequency and duty cycles to keep initial T J = C.. The R θja is the sum of the thermal impedance from junction to case R θjc and case to ambient. E. The static characteristics in Figures to are obtained using <3µs pulses, duty cycle.% max. F. These curves are based on the junctiontocase thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) = C. The OA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on in FR board with oz. Copper, in a still air environment with T A = C. mω THI PROUCT HA BEEN EIGNE AN QUALIFIE FOR THE CONUMER MARKET. APPLICATION OR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM ARE NOT AUTHORIZE. AO OE NOT AUME ANY LIABILITY ARIING OUT OF UCH APPLICATION OR UE OF IT PROUCT. AO REERVE THE RIGHT TO IMPROVE PROUCT EIGN, FUNCTION AN RELIABILITY WITHOUT NOTICE. Rev: Mar www.aosmd.com Page of
AON7E TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 3 3.V 3 V =V V.V 3V I (A) V G =.V I (A) C C 3 V (Volts) Fig : OnRegion Characteristics (Note E) 3 V G (Volts) Figure : Transfer Characteristics (Note E) 8 R (ON) (mω) V G =.V V G =V Normalized OnResistance.8... V G =V I =A 7 V G =.V I =A I (A) Figure 3: OnResistance vs. rain Current and Gate Voltage (Note E).8 7 7 Temperature ( C) Figure : OnResistance vs. Junction 8Temperature (Note E) 9.E R (ON) (mω) 3 C I =A C I (A).E.E.E.E.E3 C C.E 8 V G (Volts) Figure : OnResistance vs. Gateource Voltage (Note E).E.....8.. V (Volts) Figure : Bodyiode Characteristics (Note E) Rev: Mar www.aosmd.com Page 3 of
AON7E TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 8 V =V I =A C iss V G (Volts) Capacitance (pf) C oss C rss 3 3 Q g (nc) Figure 7: GateCharge Characteristics 3 V (Volts) Figure 8: Capacitance Characteristics. I (Amps).... R (ON) C T J(Max) = C T C = C µs µs µs ms ms ms Power (W) 8 T J(Max) = C T C = C 7... V (Volts) Figure 9: Maximum Forward Biased afe Operating Area (Note F).... Figure : ingle Pulse Power Rating JunctiontoCase 8 (Note F) Z θjc Normalized Transient Thermal Resistance... =T on /T T J,PK =T C P M.Z θjc.r θjc R θjc = C/W E.... Figure : Normalized Maximum Transient Thermal Impedance (Note F) ingle Pulse In descending order =.,.3,.,.,.,., single pulse P T on T Rev: Mar www.aosmd.com Page of
AON7E TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 3 3 Power issipation (W) 3 Current rating I (A) 3 7 T CAE ( C) Figure : Power erating (Note F) 7 T CAE ( C) Figure 3: Current erating (Note F) T A = C Power (W) E.. Figure : ingle Pulse Power Rating Junctionto Ambient (Note H) Z θja Normalized Transient Thermal Resistance... =T on /T T J,PK =T A P M.Z θja.r θja R θja =7 C/W ingle Pulse.... Figure : Normalized Maximum Transient Thermal Impedance (Note H) In descending order =.,.3,.,.,.,., single pulse P T on T Rev: Mar www.aosmd.com Page of
AON7E XXX Gate Charge Test Circuit & Waveform Qg VC UT VC V Qgs Qgd Ig RL Resistive witching Test Circuit & Waveforms Charge Rg UT VC 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive witching (UI) Test Circuit & Waveforms L E = / LI AR AR BV Id Rg VC Id I AR UT iode Recovery Test Circuit & Waveforms UT Q = Idt rr Ig Isd L VC Isd I F di/dt I RM t rr Rev: Mar www.aosmd.com Page of