MOSFET IRF7855 (KRF7855)

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Transcription:

M Type Features OP-8 V (V) = V I = 2 (VG = V) R(ON) < 9.4mΩ (VG = V) 8.5.5 G 2 7 3 4 5.2 +.4 -.2 ource 2 ource 3 ource 4 Gate 5 rain rain 7 rain 8 rain bsolute Maximum Ratings Ta = 25 Parameter ymbol Rating Unit rain-ource Voltage Gate-ource Voltage Continuous rain Current Pulsed rain Current V VG ±2 T=25 2 T=7 8.7 IM 97 Power issipation T=25 P 2.5 W Linear erating Factor valanche Current ingle Pulse valanche Energy Peak iode Recovery dv/dt Thermal Resistance.Junction- to-mbient Thermal Resistance.Junction- to-case I.2 W/ I 7.2 E 54 mj dv/dt 9.9 V/ns RthJ 5 RthJC 2 Junction Temperature TJ 5 torage Temperature Range Tstg -55 to 5 V /W

M Type Electrical Characteristics Ta = 25 Parameter ymbol Test Conditions Min Typ Max Unit rain-ource Breakdown Voltage V I=25μ, VG=V V Zero Gate Voltage rain Current I V=V, VG=V 2 V=V, VG=V, TJ=25 25 μ Gate-Body Leakage Current IG V=V, VG=±2V ± n Gate Threshold Voltage VG(th) V=VG, I=μ 3 4.9 V tatic rain-ource On-Resistance R(On) VG=V, I=2 7.4 9.4 mω Forward Transconductance gf V=25V, I=7.2 4 Input Capacitance Ciss 5 Output Capacitance Coss VG=V, V=25V, f=mhz 44 Reverse Transfer Capacitance Crss 2 pf Output Capacitance Coss VG = V, V = V, ƒ =.MHz 9 Output Capacitance Coss VG = V, V = 48V, ƒ =.MHz 32 Effective Output Capacitance Coss eff VG = V, V = to 48V 52 Total Gate Charge Qg 2 39 Gate ource Charge Qgs VG=V, V=3V, I=7.2.8 nc Gate rain Charge Qgd 9. Turn-On elaytime td(on) 8.7 Turn-On Rise Time tr 3 VG=V, V=3V, I=7.2,RG=.2Ω Turn-Off elaytime td(off) ns Turn-Off Fall Time tf 2 Body iode Reverse Recovery Time trr I= 7.2, VG=, di/dt= /μs,tj = 25 33 5 Body iode Reverse Recovery Charge Qrr IF= 7.2, V=25V, di/dt= /μs,tj = 25 38 57 nc Maximum Body-iode Continuous Current I symbol 2.3 showing the integral reverse G Pulsed ource Current IM p-n junction diode. 97 iode Forward Voltage V I= 7.2, VG=, TJ = 25.7.3 V 2

I, rain-to-ource Current () R (on), rain-to-ource On Resistance (Normalized) I, rain-to-ource Current () I, rain-to-ource Current () M Type VG TOP 5V V 8.V 7.V.V 5.5V 5.V BOTTOM 4.5V VG TOP 5V V 8.V 7.V.V 5.5V 5.V BOTTOM 4.5V. 4.5V µs PULE WITH Tj = 25 C.. V, rain-to-ource Voltage (V) 4.5V µs PULE WITH Tj = 5 C.. V, rain-to-ource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2. I = 2 V G = V T J = 5 C.5.. V = 5V µs PULE WITH 3 4 5 7 8 V G, Gate-to-ource Voltage (V).5 - -4-2 2 4 8 2 4 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 3

I, rain-to-ource Current () C, Capacitance (pf) V G, Gate-to-ource Voltage (V) M Type V G = V, f = MHZ C iss = C gs + C gd, C ds HORTE C rss = C gd C oss = C ds + C gd C iss 2.. 8. I = 7.2 V = 48V V = 3V V = 2V C oss. 4. C rss 2.. 5 5 2 25 3 V, rain-to-ource Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. rain-to-ource Voltage Fig. Typical Gate Charge vs. Gate-to-ource Voltage I, Reverse rain Current () T J = 5 C..2.4..8..2. V G = V.. T = 25 C Tj = 5 C ingle Pulse OPERTION IN THI RE LIMITE BY R (on) µsec msec msec V, ource-to-rain Voltage (V) V, rain-to-ource Voltage (V) Fig 7. Typical ource-rain iode Forward Voltage Fig 8. Maximum afe Operating rea 4

I, rain Current () M Type 2 8 + - 4 2 25 5 75 25 5 T, mbient Temperature ( C) Fig 9. Maximum rain Current vs. mbient Temperature Fig a. witching Time Test Circuit V 9%. % % V G t d(on) t r t d(off) t f Fig b. witching Time Waveforms Thermal Response ( Z thj ).. =.5.2..5.2. τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= τi/ri R R 2 R 3 R R 2 R 3 τ τ Ri ( C/W) τi (sec).734.27848 27.28.383.3 53. INGLE PULE ( THERML REPONE ). E- E-5.... t, Rectangular Pulse uration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient 5

E, ingle Pulse valanche Energy (mj) M Type R (on), rain-to -ource On Resistance ( mω) R (on), rain-to -ource On Resistance (m Ω) 3 I = 7.2 4 25 2 2 5 8 Vgs = V 5 4 2 3 4 5 7 8 9 4 5 7 8 9 2 3 4 5 I, rain Current () V G, Gate -to -ource Voltage (V) Fig 2. On-Resistance vs. rain Current Fig 3. On-Resistance vs. Gate Voltage Q G K UT L VCC V G Q G Q G 24 I Charge Fig 4a&b. Basic Gate Charge Test Circuit and Waveform 2 2 TOP.4.58 BOTTOM 7.2 5V 8 tp V (BR) V L RIVER 4 I R G 2V tp.u.t I. + - V 25 5 75 25 5 tarting T J, Junction Temperature ( C) Fig 5a&b. Unclamped Inductive Test circuit and Waveforms Fig 5c. Maximum valanche Energy vs. rain Current