DMCDSVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max Q V Q -5V I D Max T A = +5 C.7Ω @ V GS = V 57mA Ω @ V GS =.5V Ω @ V GS = -V Ω @ V GS = -5V Description and Applications ma -ma -ma This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q, supported by a PPAP and is ideal for use in: Power Management Functions DC-DC Converters Battery Features and Benefits Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes & ) Halogen and Antimony Free. Green Device (Note ) Qualified to AEC-Q Standards for High Reliability PPAP Capable (Note ) Mechanical Data Case: SOT5 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 9V- Moisture Sensitivity: Level per J-STD- Terminal Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-, Method e Weight:. grams (Approximate) SOT5 D G S D D G G ESD PROTECTED Top View Bottom View S G D Gate Protection Gate Protection Diode S Diode Q N-CHANNEL Q P-CHANNEL Top View Equivalent Circuit S Ordering Information (Note 5) Part Number Case Packaging DMCDSVQ-7 SOT5,/Tape & Reel DMCDSVQ- SOT5,/Tape & Reel Notes:. No purposely added lead. Fully EU Directive /95/EC (RoHS) & /5/EU (RoHS ) compliant.. See http:///quality/lead_free.html for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free.. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds.. Automotive products are AEC-Q qualified and are PPAP capable. Refer to https:///quality/product-compliance-definitions/. 5. For packaging details, go to our website at https:///design/support/packaging/diodes-packaging/. DMCDSVQ Document number: DS9 Rev. - of November 7
DMCDSVQ Marking Information S YM S = Product Type Marking Code YM = Date Code Marking Y = Year (ex: E = 7) M = Month (ex: 9 = September) Date Code Key Year 7 9 Code D E F G H I J Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 5 7 9 O N D Maximum Ratings (@T A = +5 C, unless otherwise specified.) Characteristic Symbol Q_Value Q_Value Unit Drain-Source Voltage V DSS -5 V Gate-Source Voltage V GSS ± ± V Continuous Drain Current (Note 7) N-Channel: V GS = V P-Channel: V GS = -V Steady State T A = +5 C T A = +7 C Pulsed Drain Current (μs Pulse, Duty Cycle = %) I DM, - ma Maximum Body Diode Continuous Current (Note 7) I S 5 - ma I D 57 57 - - ma Thermal Characteristics (@T A = +5 C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note ) P D.5 W Thermal Resistance, Junction to Ambient (Note ) Steady State R JA 5 C/W Total Power Dissipation (Note 7) P D. W Thermal Resistance, Junction to Ambient (Note 7) Steady State R JA 5 C/W Operating and Storage Temperature Range T J, T STG -55 to +5 C Notes:. Device mounted on FR- substrate PC board, oz copper, with minimum recommended pad layout. 7. Device mounted on FR- substrate PC board, oz copper, with inch square copper plate. DMCDSVQ Document number: DS9 Rev. - of November 7
DMCDSVQ Electrical Characteristics - Q N-CHANNEL (@T A = +5 C, unless otherwise specified.) OFF CHARACTERISTICS (Note ) Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BV DSS V V GS = V, I D = 5μA Zero Gate Voltage Drain Current I DSS µa V DS =V, V GS = V Gate-Source Leakage I GSS ± µa V GS = ±V, V DS = V ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH)..5 V V DS = V GS, I D = 5μA Static Drain-Source On-Resistance R DS(ON).7 V GS = V, I D = 5mA Ω V GS =.5V, I D = ma Diode Forward Voltage V SD. V V GS = V, I S = 5mA DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C iss pf Output Capacitance C oss. pf Reverse Transfer Capacitance C rss.9 pf Total Gate Charge Q g. nc Gate-Source Charge Q gs.5 nc Gate-Drain Charge Q gd.9 nc Turn-On Delay Time t D(ON). ns Turn-On Rise Time t R.7 ns Turn-Off Delay Time t D(OFF) 5. ns Turn-Off Fall Time t F.5 ns V DS = 5V, V GS = V, f =.MHz V GS =.5V, V DS = V, I D = 5mA V DD = V, V GS = V, R g = 5Ω, I D = ma Electrical Characteristics - Q P-CHANNEL (@T A = +5 C, unless otherwise specified.) OFF CHARACTERISTICS (Note ) Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BV DSS -5 V V GS = V, I D = -5μA Zero Gate Voltage Drain Current I DSS - µa V DS = -5V, V GS = V Gate-Source Leakage I GSS ± µa V GS = ±V, V DS = V ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH) - -.5 V V DS = V GS, I D = -5μA Static Drain-Source On-Resistance R DS(ON) V GS = -V, I D = -5mA Ω V GS = -5V, I D = -ma Diode Forward Voltage V SD -. V V GS = V, I S = -5mA DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C iss pf Output Capacitance C oss. pf Reverse Transfer Capacitance C rss. pf Total Gate Charge Q g. nc Gate-Source Charge Q gs. nc Gate-Drain Charge Q gd. nc Turn-On Delay Time t D(ON). ns Turn-On Rise Time t R. ns Turn-Off Delay Time t D(OFF). ns Turn-Off Fall Time t F 9.5 ns V DS = -5V, V GS = V, f =.MHz V GS = -.5V, V DS = -V, I D = -5mA V DD = -V, V GS = -V, R g = 5Ω, I D = -7mA Notes:. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMCDSVQ Document number: DS9 Rev. - of November 7
R DS(ON), DRAIN-SOURCE ON-RESISTANCE (W) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON), DRAIN-SOURCE ON- RESISTANCE (W) R DS(ON), DRAIN-SOURCE ON- RESISTANCE (W) DMCDSVQ Typical Characteristics - N-CHANNEL..9. V GS =.V V GS =.5V V GS = 5.V.9. V DS = 5V.7 V GS =.V.7. V GS =.5V..5.5... V GS =.V. T J =5... V GS =.V V GS =.V.5.5.5.5.5 5 V DS, DRAIN-SOURCE VOLTAGE (V) Figure. Typical Output Characteristic.. T J =5 T J =5 T J =5 T J =-55.5.5.5.5.5 5 V GS, GATE-SOURCE VOLTAGE (V) Figure. Typical Transfer Characteristic.5.5 V GS =.5V I D = 5mA V GS = V.5 I D = ma.....5..7..9 I D, DRAIN-SOURCE CURRENT (A) Figure. Typical On-Resistance vs. Drain Current and Gate Voltage V GS, GATE-SOURCE VOLTAGE (V) Figure. Typical Transfer Characteristic.5.5 V GS = V T J =5 T J =5.5 V GS = V, I D = 5mA.5.5 T J =5 V GS =.5V, I D = ma.5 T J =5 T J =-55.5.....5..7..9 Figure 5. Typical On-Resistance vs. Drain Current and Temperature -5-5 5 5 75 5 5 Figure. On-Resistance Variation with Temperature DMCDSVQ Document number: DS9 Rev. - of November 7
V GS (V) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (W) V GS(TH), GATE THEESHOLD VOLTAGE (V) DMCDSVQ Typical Characteristics - N-CHANNEL (Cont.).5.5.5 V GS =.5V, I D = ma.5.5 I D = ma I D = 5μA.5 V GS = V, I D = 5mA.5-5 -5 5 5 75 5 5 Figure 7. On-Resistance Variation with Temperature -5-5 5 5 75 5 5 Figure. Gate Threshold Variation and Junction Temperature.9. V GS = V f=mhz C iss.7..5.... T J = 5 T J = 5 T J = 5 T J = 5 T J = -55...9..5 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current C oss C rss 5 V DS, DRAIN-SOURCE VOLTAGE (V) Figure. Typical Junction Capacitance R DS(ON) Limited P W =µs.....5..7..9 DMCDSVQ Document number: DS9 Rev. - V DS = V, I D = 5mA Qg (nc) Figure. Gate Charge 5 of... P W =ms P W =ms P W =ms P T J(Max) = 5 T C = 5 W =s Single Pulse P W =s DC DUT on *MRP Board V GS = V. V DS, DRAIN-SOURCE VOLTAGE (V) Figure. SOA, Safe Operation Area November 7
R DS(ON), DRAIN-SOURCE ON-RESISTANCE (W) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON), DRAIN-SOURCE ON- RESISTANCE (W) R DS(ON), DRAIN-SOURCE ON- RESISTANCE (W) DMCDSVQ Typical Characteristics - P-CHANNEL..7..5. V GS = -.V V GS = -.5V V GS = -5.V V GS = -.V V GS = -.5V V GS =-.V..5.. V DS = -5V T J =-55 T J =5 T J =5 T J =5 T J =5... V GS = -.V V GS = -.5V V GS = -.V... 5 V DS, DRAIN-SOURCE VOLTAGE (V) Figure. Typical Output Characteristic 5 7 V GS, GATE-SOURCE VOLTAGE (V) Figure. Typical Transfer Characteristic 5 V GS = -5V 9 7 V GS = -V.....5..7. I D, DRAIN-SOURCE CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Gate Voltage 5 I D = -5mA V GS, GATE-SOURCE VOLTAGE (V) Figure. Typical Transfer Characteristic V GS = -V.5 V GS = -V, I D = -5mA T J =5 T J =5 T J =5 T J =-55.....5..7. DMCDSVQ Document number: DS9 Rev. - T J =5 Figure 7. Typical On-Resistance vs. Drain Current and Temperature of.5.5 V GS = -5.V, I D = -ma -5-5 5 5 75 5 5 Figure. On-Resistance Variation with Temperature November 7
V GS (V) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (W) V GS(TH), GATE THRESHOLD VOLTAGE (V) DMCDSVQ Typical Characteristics - P-CHANNEL (Cont.) 7 5 V GS = -V, I D = -5mA.5 I D = -ma I D = -5μA V GS = -5.V, I D = -ma.5-5 -5 5 5 75 5 5 Figure 9. On-Resistance Variation with Temperature -5-5 5 5 75 5 5 Figure. Gate Threshold Variation vs. Junction Temperature..7 V GS = V f=mhz..5 C iss.. T J = 5 C oss.. T J = 5 T J = 5 T J = 5 T J = -55...9..5 V SD, SOURCE-DRAIN VOLTAGE (V) Figure. Diode Forward Voltage vs. Current C rss 5 V DS, DRAIN-SOURCE VOLTAGE(V) Figure. Typical Junction Capacitance R DS(ON) Limited.....5..7 Qg (nc) Figure. Gate Charge DMCDSVQ Document number: DS9 Rev. - V DS = -V, I D = -5mA 7 of... P W =µs P W =ms P W =ms P W =ms P W =s P W =s T J(Max) = 5 T C = 5 Single Pulse DC DUT on *MRP Board V GS = -V V DS, DRAIN-SOURCE VOLTAGE (V) Figure. SOA, Safe Operation Area November 7
r(t), TRANSIENT THERMAL RESISTANCE DMCDSVQ. D=.7 D=.5 D=. D=. D=.5 D=.9. D=. D=.. D=Single Pulse D=.5 E- E-5.... t, PULSE DURATION TIME (sec) Figure 5. Transient Thermal Resistance R θja (t) = r(t) * R θja R θja = 5 /W Duty Cycle, D = t / t DMCDSVQ Document number: DS9 Rev. - of November 7
DMCDSVQ Package Outline Dimensions Please see http:///package-outlines.html for the latest version. SOT5 A K G D B C M SOT5 Dim Min Max Typ A.5.. B..5. C.55.7. D - -.5 G.9.. H.5.7. K.55.. L... M... All Dimensions in mm H L Suggested Pad Layout Please see http:///package-outlines.html for the latest version. SOT5 Z G Y C C C Value Dimensions (in mm) Z. G. X.75 Y.5 C.7 C.5 X DMCDSVQ Document number: DS9 Rev. - 9 of November 7
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