PDM6UT20V08E N-Channel and P-Channel,20V,Small signal MOSFET
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1 N-Channel and P-Channel,2V,Small signal MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D1 G2 S2 MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A).3@ V GS =4.V N-Channel 2 5@ V GS V GS =1.8V.9@ V GS =-4.5V P-Channel 1.2@ V GS =-2.5V @ V GS =-1.8V S1 G1 D2 N-Channel Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V DS 2 V Gate-Source Voltage V GS ±8 V Drain Current Total Power Dissipation Continuous I D A Pulsed I D 3. A T A =25 P D 17 mw T A =125 P D 155 mw Rev
2 Electrical characteristics per ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D =25μA,V GS =V 2 - V Zero Gate Voltage Drain Current I DSS V DS =2V,V GS =V μa Gate-Body Leakage Current I GSS V DS =V,V GS =±8V - - ±1 μa Gate Threshold Voltage V GS(th) V DS =V GS, I D =25μA V V GS =4.V, I D =3mA Ω Static Drain-Source On-Resistance R DS(ON) V GS =2.5V, I D =2mA Ω V GS =1.8V, I D =15mA.9 Ω DYNAMIC PARAMETERS Input Capacitance C ISS pf Output Capacitance C DSS V GS =V, V DS =16V, f=1mhz - 23 pf Reverse Transfer Capacitance C RSS - 18 pf SWITCHING PARAMETERS Turn-On Delay Time t d(on) V DS =1V, V GS =4.5V, - 15 ns Turn-Off Delay Time t d(off) R G =1Ω, I D =A - 55 ns P-Channel Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V DS -2 V Gate-Source Voltage V GS ±8 V Drain Current Continuous I D -.8 A Pulsed I D -3 A Total Power Dissipation T A =25 P D 25 mw T A =125 P D 2 mw Rev
3 Electrical characteristics per ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D =-25μA,V GS =V V Zero Gate Voltage Drain Current I DSS V DS =2V,V GS =V μa Gate-Body Leakage Current I GSS V DS =V,V GS =±1V - - ±1 ua Gate Threshold Voltage V GS(th) V DS =V GS, I D =-25μA V V GS =-4.5V, I D =-2mA Ω Static Drain-Source On-Resistance R DS(ON) V GS =-2.5V, I D =-1mA Ω V GS =-1.8V, I D =-1mA Ω Forward Tran conductance g FS V GS =5V, I D =5mA, T A = S DYNAMIC PARAMETERS Input Capacitance C ISS - 2 pf Output Capacitance C DSS V GS =V, V DS =-6V, f=2kmhz - 8 pf Reverse Transfer Capacitance C RSS - 15 pf SWITCHING PARAMETERS Turn-On Delay Time t d(on) V DD =-6V, V GS =-4.5V, - 17 ns Turn-Off Delay Time t d(off) R L =6Ω, R G =6Ω, I D =-1A - 65 ns N-Channel Typical Characteristics V GS =2.5V 8 T=25 C 6 4 V GS =2.V 6 4 T=55 C T=125 C 2 V GS =1.5V Fig 1. Output Characteristics V GS Gate to Source Voltage (V) Fig 2. Transfer Characteristics Rev
4 8 rds(on) On-Resistance (Ω) V GS =1.8V V GS =2.5V V GS =4.5V C Capacitance (pf) C iss C Oss I D Drain Current (A) Fig 3. On-Resistance vs. Drain Current C Rss Fig 4. Capacitance P-Channel Typical Characteristics V GS =2.5V.8 T=25 C V GS =2.V T=55 C T=125 C V GS =1.5V Fig 1. Output Characteristics V GS Gate to Source Voltage (V) Fig 2. Transfer Characteristics Rev
5 V GS =-4.5V 8 RDS(on) Drain-to-Source Resistance(Ω) T J =125 T J =25 T J =-55 C Capacitance (pf) C iss C Oss I D Drain Current (A) Fig 3. On-Resistance vs. Drain Current C Rss Fig 4. Capacitance Product dimension (SOT-363) A (6) C B (1) D E H F G Rev
6 Dim Millimeters Inches MIN MAX MIN MAX A B C D 5BSC 26BSC E F G.1 4 H Rev
7 IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi),Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: For additional information, please contact your local Sales Representative. Copyright 29, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev
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