BA60J SMALL SIGNAL SCHOKY DIODE FEAURES AND BENEFIS VERY SMALL CONDUCION LOSSES NEGLIGIBLE SWICHING LOSSES LOW FORWARD VOLAGE DROP A 60 K EXREMELY FAS SWICHING SURFACE MOUNED DEVICE DESCRIPION Schottky barrier diode encapsulated in a SOD-323 small SMD package. his device is intended for use in portable equipments. It is suited for DC to DC converters, step-up conversion and power management. SOD-323 ABSOLUE RAINGS (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 10 V I F Peak forward current δ = 0.11 3 A I FSM Surge non repetitive forward current tp=10ms 5 A P tot Power Dissipation a=25 C 310 mw stg Storage temperature range - 65 to +150 C j Maximum operating junction temperature * 150 C L Maximum temperature for soldering during 10s 260 C *: dptot 1 < dj Rth( j a) thermal runaway condition for a diode on its own heatsink HERMAL RESISANCE Symbol Parameter Value Unit R th (j-a) Junction to ambient (*) 400 C/W (*) Mounted on epoxy board with recommended pad layout. January 2003 - Ed: 6A 1/5
BA60J SAIC ELECRICAL CHARACERISICS Symbol ests Conditions ests conditions Min. yp. Max. Unit V F * Forward voltage drop j = 25 C I F = 10 ma 0.28 0.32 V I F = 100 ma 0.35 0.40 I F = 1 A 0.53 0.58 I R ** Reverse leakage current j = 25 C V R =5V 1 3 µa j = 25 C V R = 8 V 1.3 4 j = 25 C V R =10V 2 6 j = 25 C V R = 12 V 2.5 7.5 j = 80 C V R = 8 V 73 150 Pulse test: * tp = 380µs, δ <2% ** tp = 5ms, δ <2% o evaluate the conduction losses the following equation: 2 P=0.38xI F(AV) + 0.17 I F (RMS) 2/5
Fig. 1: Average forward power dissipation versus average forward current. BA60J Fig. 2-1: Peak forward current versus ambient temperature (δ = 0.11). PF(av)(W) 0.35 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 0.30 0.25 δ = 1 0.20 0.15 0.10 0.05 IF(av) (A) δ=tp/ tp 0.00 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IF(A) 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 amb( C) δ=tp/ tp 0.0 0 25 50 75 100 125 150 Fig. 2-2: Average forward current versus ambient temperature (δ = 0.5). Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values). IF(av)(A) 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 δ=tp/ tp amb( C) 0.00 0 25 50 75 100 125 150 3.0 2.5 2.0 1.5 1.0 0.5 IM(A) IM t δ=0.5 t(s) a=25 C a=50 C a=75 C 0.0 1E-3 1E-2 Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration (Epoxy printed circuit board FR4 with recommended pad layout). Fig. 5: Reverse leackage current versus reverse voltage applied (typical values). Zth(j-a)/Rth(j-a) δ = 0.5 1E+1 IR(mA) j=150 C δ = 0.2 δ = 0.1 j=80 C Single pulse 1E-2 t(s) δ=tp/ tp 1E-3 1E-4 1E-3 1E-2 1E+1 1E+2 1E-2 1E-3 j=25 C VR(V) 1E-4 0 1 2 3 4 5 6 7 8 9 10 3/5
BA60J Fig. 6: Reverse leackage current versus junction temperature (typical values). Fig. 7: Junction capacitance versus reverse voltage applied (typical values). 1E+5 IR[j] / IR[j=25 C] 100 C(pF) 1E+4 VR=8V F=1MHz j=25 C 1E+3 1E+2 1E+1 j( C) 0 25 50 75 100 125 150 VR(V) 10 1 10 Fig. 8-1: Forward voltage drop versus forward current (High level). Fig. 8-2: Forward voltage drop versus forward current (Low level). 1E+1 IFM(A) j=150 C (ypical values) j=80 C (ypical values) j=25 C (Maximum values) VFM(V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1.0 0.9 0.8 0.7 0.6 0.5 IFM(A) j=80 C (ypical values) j=150 C (ypical values) j=25 C (Maximum values) 0.4 0.3 0.2 0.1 VFM(V) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Fig. 9: hermal resistance junction to ambient versus copper surface (epoxy printed circuit board FR4, copper thickness: 35µm). Rth(j-a) ( C/W) 600 IF=0.75A 550 500 450 400 350 300 250 200 150 S(Cu) (mm²) 100 0 10 20 30 40 50 60 70 80 90 100 4/5
BA60J PACKAGE MECHANICAL DAA SOD-323 DIMENSIONS H A1 REF. Millimeters Inches b Min. Max. Min. Max. E A 1.17 0.046 A1 0 0.1 0 0.004 b 0.25 0.44 0.01 0.017 D A c 0.1 0.25 0.004 0.01 D 1.52 1.8 0.06 0.071 c Q1 E 1.11 1.45 0.044 0.057 H 2.3 2.7 0.09 0.106 L L 0.1 0.46 0.004 0.02 Q1 0.1 0.41 0.004 0.016 MARKING ype Marking Package Weight Base qty Delivery mode BA60JFILM 60 SOD-323 0.005 g. 3000 ape & reel Epoxy meets UL94V-0 Information furnished is believed to be accurate and reliable. However, SMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SMicroelectronics. Specifications mentioned in this publication are subject to change without notice. his publication supersedes and replaces all information previously supplied. SMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SMicroelectronics. he S logo is a registered trademark of SMicroelectronics 2003 SMicroelectronics - Printed in Italy - All rights reserved. SMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5
About S Products Applications Support Buy News & Events S Worldwide Contact Us Login search the site Search For Part #: BA60JFILM Example: *74*00* Part Number Search Matching Documents: 1-1 of 1 Generic Part Number(s) Orderable Part Number(s) Status Product Page/ Datasheet Description BA60 BA60JFILM Active SMALL SIGNAL SCHOKY DIODE Diodes Schottky Barrier Signal Schottky Search time: 0.073s All rights reserved 2007 SMicroelectronics :: erms Of Use :: Privacy Policy