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YM AVANCE INFORMATION Product Summary BV SS -12V R S(ON) Max I Max T C = +25 C 8.5mΩ @ -26A 12mΩ @ V GS = -2.5V -22A P-CHANNEL ENHANCEMENT MOE MOSFET Features and Benefits.6mm Profile Ideal for Low Profile Applications PCB Footprint of 4mm 2 Low Gate Threshold Voltage Low On-Resistance ES Protected up to 8kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green evice (Note 3) escription and Applications This MOSFET is designed to minimize on-state resistance (R S(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Battery Management Application Power Management Functions Load Switches U-FN22-6 (Type F) Mechanical ata Case: U-FN22-6 (Type F) Case Material: Molded Plastic, Green Molding Compound; UL Flammability Classification Rating 94V- Moisture Sensitivity: Level 1 per J-ST-2 Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-ST-22, Method 28 e4 Weight:.7 grams (Approximate) G ES PROTECTE Top View Pin1 Bottom View Pin Out Bottom View Gate Protection iode S Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging -7 U-FN22-6 (Type F) 3,/Tape & Reel -13 U-FN22-6 (Type F) 1,/Tape & Reel Notes: 1. No purposely added lead. Fully EU irective 22/95/EC (RoHS) & 211/65/EU (RoHS 2) compliant. 2. See http:///quality/lead_free.html for more information about iodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<15ppm total Br + Cl) and <1ppm antimony compounds. 4. For packaging details, go to our website at http:///products/packages.html. Marking Information U-FN22-6 (Type F) 9P 9P = Product Type Marking Code YM = ate Code Marking Y = Year (ex: E = 217) M = Month (ex: 9 = September) ate Code Key Year 217 218 219 22 221 222 223 Code E F G H I J K Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov ec Code 1 2 3 4 5 6 7 8 9 O N 1 of 7 January 217

Maximum Ratings (@T A = +25 C, unless otherwise specified.) Characteristic Symbol Value Unit rain-source Voltage V SS -12 V Gate-Source Voltage V GSS ±8 V Continuous rain Current (Note 6) Steady T A = +25 C -12.8 I State T A = +7 C -1.3 A Steady T C = +25 C -26 I State T C = +7 C -21 A Pulsed rain Current (1μs Pulse, uty Cycle = 1%) I M -7 A Continuous Source-rain iode Current (Note 6) I S -3.2 A Avalanche Current (Note 7) L =.1mH I AS -2 A Avalanche Energy (Note 7) L =.1mH E AS 2 mj Thermal Characteristics (@T A = +25 C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power issipation (Note 5) T A = +25 C P.9 W Steady State 145 Thermal Resistance, Junction to Ambient (Note 5) R JA C/W t<1s 92 Total Power issipation (Note 6) T A = +25 C P 2.1 W Steady State 59 Thermal Resistance, Junction to Ambient (Note 6) R t<1s JA 38 C/W Thermal Resistance, Junction to Case (Note 6) Steady State R JC 14 Operating and Storage Temperature Range T J, T STG -55 to +15 C Electrical Characteristics (@T A = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) rain-source Breakdown Voltage BV SS -12 V V GS = V, I = -25μA Zero Gate Voltage rain Current T J = +25 C I SS -1 µa V S = -9.6V, V GS = V Gate-Source Leakage I GSS ±1 µa V GS = ±8V, V S = V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V GS(TH) -.3-1. V V S = V GS, I = -25μA 5.8 8.5, I = -5A Static rain-source On-Resistance R S(ON) 7.3 12 mω V GS = -2.5V, I = -4A 9.5 18.5 V GS = -1.8V, I = -2A iode Forward Voltage V S -.8-1.2 V V GS = V, I S = -1.A YNAMIC CHARACTERISTICS (Note 9) Input Capacitance C iss 2475 V pf S = -6V, V GS = V, Output Capacitance C oss 747 f = 1.MHz Reverse Transfer Capacitance C rss 516 Gate Resistance R g 2 Ω V S = V, V GS = V, f = 1MHz Total Gate Charge () Q g 28 Total Gate Charge (V GS = -8V) Q g 47 Gate-Source Charge Q gs 3.4 nc V S = -6V, I = -7A Gate-rain Charge Q gd 7.5 Turn-On elay Time t (ON) 6.1 Turn-On Rise Time t R 21 V ns S = -6V,, Turn-Off elay Time t (OFF) 14 R g = 1Ω, I = -7A Turn-Off Fall Time t F 125 Reverse Recovery Time t RR 115 ns I F = -1.A, di/dt = -1A/μs Reverse Recovery Charge Q RR 75 nc I F = -1.A, di/dt = -1A/μs Notes: 5. evice mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. evice mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I AS and E AS ratings are based on low frequency and duty cycles to keep T J = +25 C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 January 217

R S(ON), RAIN-SOURCE ON-RESISTANCE (W) R S(ON), RAIN-SOURCE ON-RESISTANCE (NORMALIZE) R S(ON), RAIN-SOURCE ON-RESISTANCE (W) R S(ON), RAIN-SOURCE ON-RESISTANCE(W) AVANCE INFORMATION 3. 25. 2. 15. V GS = -1.5V V GS = -1.8V V GS =-2.V V GS = -2.5V V GS = -3.V V GS = -8.V 2 15 1 V S = -5V T J = 125 1. 5. V GS = -.9V V GS = -1.V 5 T J = 15 T J = 85 T J = 25..5 1 1.5 2 2.5 3 V S, RAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic T J = -55.5 1 1.5 2 V GS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic.14.3.12.1.8.6.4 V GS = -1.8V V GS = -2.5V.25.2.15.1.2.5 I = -5.A 2 4 6 8 1 12 14 16 18 2 I, RAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. rain Current and Gate Voltage 1 2 3 4 5 6 7 8 V GS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic.12 1.5.1.8 T J =15 T J =125 1.2, I = -5A.6 T J =85 T J =25 V GS = -1.8V, I = -2A.4 T J =-55.9.2 5 1 15 2 Figure 5. Typical On-Resistance vs. rain Current and Temperature 3 of 7.6-5 -25 25 5 75 1 125 15 T J, JUNCTION TEMPERATURE ( ) Figure 6. On-Resistance Variation with Temperature January 217

V GS (V) Is, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) AVANCE INFORMATION R S(ON), RAIN-SOURCE ON-RESISTANCE (W) V GS(TH), GATE THRESHOL VOLTAGE (V).16.14.8.12.1 V GS = -1.8V, I = -2A.6 I = -1mA.8.6.4, I = -5A.4.2 I = -25μA.2-5 -25 25 5 75 1 125 15 T J, JUNCTION TEMPERATURE ( ) Figure 7. On-Resistance Variation with Temperature -5-25 25 5 75 1 125 15 T J, JUNCTION TEMPERATURE ( ) Figure 8. Gate Threshold Variation vs. junciton Temperature 2 V GS = V 1 f=1mhz 15 C iss 1 1 C oss T J = 85 o C 5 T J = 125 o C T J = 25 o C C rss T J = 15 o C T J = -55 o C.3.6.9 1.2 V S, SOURCE-RAIN VOLTAGE (V) Figure 9. iode Forward Voltage vs. Current 1 2 4 6 8 1 12 V S, RAIN-SOURCE VOLTAGE (V) Figure 1. Typical Junction Capacitance 8 1 R S(ON) Limited P W =-1µs 6 1 4 V S = -6V, I = -7A 1 P W =-1ms P W =-1ms 2 1 2 3 4 5 Qg (nc) Figure 11. Gate Charge.1.1 P W =-1ms P W =-1s T J(Max) = 15 T C = 25 Single Pulse UT on 1*MRP Board P W =-1s C.1.1 1 1 1 V S, RAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 4 of 7 January 217

r(t), TRANSIENT THERMAL RESISTANCE 1 =.7 =.5 =.3 =.9.1 =.1 =.5.1 =.2 =.1 =.5.1 =Single Pulse R θja (t) = r(t) * R θja R θja = 139 /W uty Cycle, = t1 / t2.1.1.1.1 1 1 1 1 t1, PULSE URATION TIME (sec) Figure 13. Transient Thermal Resistance 5 of 7 January 217

Package Outline imensions Please see http:///package-outlines.html for the latest version. U-FN22-6 (Type F) A 2a E E2a z1 z(4x) e3 k2 k e e4 2 k1 b z2 e2 A1 E2 A3 L Seating Plane U-FN22-6 (Type F) im Min Max Typ A.57.63.6 A1..5.3 A3 - -.15 b.25.35.3 1.95 2.5 2. 2.85 1.5.95 2a.33.43.38 E 1.95 2.5 2. E2 1.5 1.25 1.15 E2a.65.75.7 e.65 BSC e2.863 BSC e3.7 BSC e4.325 BSC k.37 BSC k1.15 BSC k2.36 BSC L.225.325.275 z.2 BSC z1.11 BSC z2.2 BSC All imensions in mm Suggested Pad Layout Please see http:///package-outlines.html for the latest version. U-FN22-6 (Type F) Y3 Y2 C X3 X X1 Y Y1 Y4 imensions Value (in mm) C.65 X.4 X1.48 X2.95 X3 1.7 Y.425 Y1.8 Y2 1.15 Y3 1.45 Y4 2.3 Pin1 X2 6 of 7 January 217

IMPORTANT NOTICE IOES INCORPORATE MAKES NO WARRANTY OF ANY KIN, EXPRESS OR IMPLIE, WITH REGARS TO THIS OCUMENT, INCLUING, BUT NOT LIMITE TO, THE IMPLIE WARRANTIES OF MERCHANTABILITY AN FITNESS FOR A PARTICULAR PURPOSE (AN THEIR EQUIVALENTS UNER THE LAWS OF ANY JURISICTION). iodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. iodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes Incorporated and all the companies whose products are represented on iodes Incorporated website, harmless against all damages. iodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use iodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold iodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by iodes Incorporated. LIFE SUPPORT iodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of iodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of iodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by iodes Incorporated. Further, Customers must fully indemnify iodes Incorporated and its representatives against any damages arising out of the use of iodes Incorporated products in such safety-critical, life support devices or systems. Copyright 217, iodes Incorporated 7 of 7 January 217