IGBT PIM MODULE Features Low V CE (on) Non Punch Through IGBT Technology Low Diode V F μs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics Positive V CE (on) Temperature Coefficient Ceramic DBC Substrate Low Stray Inductance Design TOTALLY LEADFREE Benefits Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI, Requires Less Snubbing Direct Mounting to Heatsink PCB Solderable Terminals Low Junction to Case Thermal Resistance UL Approved E78996 ECONO PIM Bulletin I778 /7 GBRFK R 3 4 V CES = V I C = 3A @ T C =8 C t sc > μs @ T J = C V CE(on) typ. =.68V Absolute Maximum Ratings Parameter Symbol Test Conditions Ratings Units Inverter CollectortoEmitter Voltage V CES V GatetoEmitter Voltage V GES ± Collector Current I C Continuos C / 8 C / 3 I CM Pulsed C 4 A Diode Maximum Forward Current I FM Pulsed C 4 Power Dissipation P D One IGBT C 88 W Input Rectifier Repetitive Peak Reverse Voltage V RRM 6 V Average Output Current I F(AV) /6Hz sine pulse 8 C 3 A Surge Current (Non Repetitive) I FSM Rated V RRM applied, ms, I t (Non Repetitive) I t sine pulse 7 A s Brake CollectortoEmitter Voltage V CES V GatetoEmitter Voltage V GES ± Collector Current I C Continuous C / 8 C / 3 A I CM Pulsed C 4 Power Dissipation P D One IGBT C 88 W Maximum Operating Junction Temperature T J C Storage Temperature Range T STG 4 to Isolation Voltage V ISOL AC ( min) V Thermal and Mechanical Characteristics Parameter Symbol Min Typical Maximum Units JunctiontoCase Inverter IGBT Thermal Resistance.4 C/W JunctiontoCase Inverter FRED Thermal Resistance.97 JunctiontoCase Brake DIODE Thermal Resistance R θjc.97 JunctiontoCase Brake IGBT Thermal Resistance.4 JunctiontoCase Input Rectifier Thermal Resistance. CasetoSink, flat, greased surface R θcs. Mounting Torque (M).7 3.3 Nm Weight 7 g www.irf.com
GBRFK Bulletin I778 /6 Electrical Characteristics @ T J = C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Inverter BV (CES) CollectortoEmitter Breakdown Voltage V V GE = I C = μa IGBT ΔV (BR)CES /ΔT J Temp. Coefficient of Breakdown Voltage.33 V/ C V GE = I C = ma ( C C) V CE(ON) CollectortoEmitter Voltage.68 3.3 V I C = A V GE = V 3.68 4. I C = A V GE = V 3.9 3.6 I C = A V GE = V T J = C 4..7 I C = A V GE = V T J = C V GE (th) Gate Threshold Voltage 4 6 V CE = V GE I C = μa ΔV GE (th)/δt J Thresold Voltage temp. coefficient 9.7 mv/ C V CE = V GE I C = ma ( C C) I CES Zero Gate Voltage Collector Current μa V GE = V CE = V 7 V GE = V CE = V Tj = C I GES GatetoEmitter Leakage Current ± na V GE = ±V Q G Total Gate Charge (turnon) 48 7 I C = A Q GE GatetoEmitter Charge (turnon) 8 nc V CC = 6A Q GC GatetoCollector Charge (turnon) 33 V GE = V E ON TurnOn Switching Loss.96.44 mj I C = A V CC = 6V E OFF TurnOff Switching Loss.46.7 V GE = V R G = Ω L = mh E TOT Total Switching Loss.4.4 Tj = C E ON TurnOn Switching Loss..88 mj I C = A V CC = 6V E OFF TurnOff Switching Loss.69.9 V GE = V R G = Ω L = mh E TOT Total Switching Loss.94.83 Tj = C t d(on) TurnOn delay time 86 3 ns I C = A V CC = 6V t r Rise time 3 V GE = V R G = Ω L = mh t d(off) TurnOff delay time 8 8 Tj = C t f Fall time 74 4 C ies Input Capacitance 7 pf V GE = C oes Output Capacitance 9 9 V CC = 3V C res Reverse Transfer Capacitance 3 f = Mhz RBSOA Reverse Bias Safe Operating Area FULL SQUARE Tj = C I C = 4A R G = Ω V GE = V to SCSOA Short Circuit Safe Operating Area μs Tj = C V CC = 96V V P = V R G = Ω V GE = V to Inverter IGBT I rr Diode Peak Rev. Recovery Current A Tj = C V CC = 6V I F = A L = mh V GE = V R G = Ω V FM Diode Forward Voltage Drop.. V I F = A.3 3.3 I F = A.3.63 I F = A Tj = C.8 3.7 I F = A Tj = C www.irf.com
GBRFK Bulletin I778 /6 Electrical Characteristics @ T J = C (unless otherwise specified) Input Rectifier Brake IGBT Brake Diode NTC Parameter Min. Typ. Max. Units Conditions V FM Maximum Forward Voltage Drop. V I F = A I RM Maximum Reverse Leakage Current. ma Tj = C V R = 6V. Tj = C V R = 6V r T Forward Slope Resistance 8. mω Tj = C V F(TO) Conduction Thresold Voltage.78 V BV (CES) CollectortoEmitter Breakdown Voltage V V GE = IC = μa ΔV (BR)CES /ΔT J Temp. Coefficient of Breakdown Voltage.33 V/ C V GE = IC = ma ( C C) V CE(ON) CollectortoEmitter Voltage.68 3.3 V I C = A V GE = V 3.68 4. I C = A V GE = V 3.9 3.6 I C = A V GE = V T J = C 4..7 I C = A V GE = V T J = C V GE (th) Gate Threshold Voltage 4. 6. V CE = V GE IC = μa ΔV GE (th)/δt J Thresold Voltage temp. coefficient 9.7 mv/ C V CE = V GE IC = ma ( C C) I CES Zero Gate Voltage Collector Current μa V GE = V CE = V 7 V GE = V CE = V Tj = C I GES GatetoEmitter Leakage Current ± na V GE = ±V Q G Total Gate Charge (turnon) 48 7 I C = A Q GE GatetoEmitter Charge (turnon) 8 nc V CC = 6A Q GC GatetoCollector Charge (turnon) 33 V GE = V E ON TurnOn Switching Loss.96.44 mj I C = A V CC = 6V E OFF TurnOff Switching Loss.46.7 V GE = V R G = Ω L = mh E TOT Total Switching Loss.4.4 Tj = C E ON TurnOn Switching Loss..88 mj I C = A V CC = 6V E OFF TurnOff Switching Loss.69.9 V GE = V R G = Ω L = mμh E TOT Total Switching Loss.94.83 Tj = C t d(on) TurnOn delay time 86 3 ns I C =A V CC = 6V t r Rise time 3 V GE = V R G = Ω L = mh t d(off) TurnOff delay time 8 8 Tj = C t f Fall time 74 4 C ies Input Capacitance 7 pf V GE = C oes Output Capacitance 9 9 V CC = 3V C res Reverse Transfer Capacitance 3 f = Mhz RBSOA Reverse Bias Safe Operating Area FULL SQUARE Tj = C I C = 4A R G = Ω V GE = V to SCSOA Short Circuit Safe Operating Area μs Tj = C V CC = 96V, V P = V R G = Ω V GE = V to I rr Diode Peak Rev. Recovery Current A Tj = C V CC = 6V I F = A L = mh V GE = V R G = Ω V FM Diode Forward Voltage Drop.. V I F = A.3 3.3 I F = A.3.63 I F = A Tj = C.8 3.7 I F = A Tj = C R Resistance Ω Tj = C 493.3 Tj = C B B Value 337 K Tj = C / C Energy Losses include "tail" and diode reverse recovery www.irf.com 3
GBRFK Bulletin I778 /6 Inverter Ice (A) Vge=8V Vge=V Vge=V Vge=V Vge=8V Ice (A) Vge=8V Vge=V Vge=V Vge=V Vge=8V 3 4 6 Fig. Typ. IGBT Output Characteristics T J = C; tp = 8μs 3 4 6 Fig. Typ. IGBT Output Characteristics T J = C; tp = 8μs 8 Ice (A) 7 6 4 3 Tj = C Tj = C 4 6 8 4 6 8 Vge (V) Fig. 3 Typ. Transfer Characteristics V CE =V; tp=μs 8 6 4 8 6 4 Ice=A Ice=A Ice=A Vge (V) Fig. 4 Typical V CE vs. V GE T J = C 8 6 4 8 6 4 Ice=.A Ice=A Ice=A Vge (V) 4 6 8 Fig. Typical V CE vs. V GE Fig. 6 Typ. Capacitance vs. V CE T J = C V GE = ; f = MHz 4 www.irf.com Capacitance (pf) Cies Coes Cres
Instantaneous Forward Current I F ( A ) Thermistor Resistance ( kω) GBRFK Bulletin I778 /6 Inverter 3 3 Rg=4.7Ω Rg=Ω Rg=Ω Rg=33Ω Rg=47Ω 3 3 Irr (A) Irr (A) If (A) 3 4 Rg (Ω ) Fig. 3 Typical Diode I RR vs. I F T J = C Fig. 4 Typical Diode I RR vs. R G T J = C; I F = A 3 4 Thermistor 3 Irr (A) 8 6 4 4 6 7 8 9 dif/dt (A/µs) Fig. Typical Diode I RR vs. di F /dt; V CC = 6V; V GE = V; I CE = A; T J = C 9 Input Rectifier 4 6 8 4 6 8 T J, Junction Temperature ( C) Fig. 6 Thermistor Resistance vs. Temperature 8 7 6 T J = C T J = C 4 3...... Forward Voltage Drop V F ( V ) Fig. 7 Typ. Diode Forward Characteristics tp = 8μs 6 www.irf.com
Inverter GBRFK Bulletin I778 /6 Thermal Response (ZthJC)....3.... SINGLE PULSE (THERMAL RESPONSE) Tτ J τ τ τ τ Ci= τi/ri Ci i/ri R R R R. E E4 E3 E E E t, Rectangular Pulse Duration (sec) Fig 8. Maximum Transient Thermal Impedance, JunctiontoCase (IGBT) T C Ri ( C/W).3.8679 τi (sec),43.649 Notes:. Duty Factor D = t/t. Peak Tj = P dm x Zthjc tc Thermal Response (ZthJC)...3.... R R R 3 R R R 3 T J T τ C J τ τ τ τ τ 3 τ 3 Ci= τi/ri Ci= i/ri Ri ( C/W)..49.447 τi (sec).7.438.738 Notes:. Duty Factor D = t/t. Peak Tj = P dm x Zthjc tc SINGLE PULSE (THERMAL RESPONSE). E E4 E3 E E E t, Rectangular Pulse Duration (sec) Fig 9. Maximum Transient Thermal Impedance, JunctiontoCase (DIODE) www.irf.com 7
GBRFK Bulletin I778 /6 Brake Ice (A) Vge=8V Vge=V Vge=V Vge=V Vge=8V Ice (A) Vge=8V Vge=V Vge=V Vge=V Vge=8V 3 4 6 Fig. Typ. IGBT Output Characteristics T J = C; tp = 8μs 3 4 6 Fig. Typ. IGBT Output Characteristics T J = C; tp = 8μs 8 Ice (A) 7 6 4 3 Tj = C Tj = C 4 6 8 4 6 8 Vge (V) Fig. Typ. Transfer Characteristics V CE =V; tp=μs 8 6 4 8 6 4 Ice=A Ice=A Ice=A Vge (V) Fig. 3 Typical V CE vs. V GE T J = C 8 6 4 8 6 4 Ice=.A Ice=A Ice=A Vge (V) Fig. 4 Typical V CE vs. V GE T J = C 4 6 8 Fig. Typ. Capacitance vs. V CE V GE = ; f = MHz 8 www.irf.com Capacitance (pf) Cies Coes Cres
Brake GBRFK Bulletin I778 /7 VGE (V) 6 4 8 6 4 3 6V 3 4 QG, Total Gate Charge (nc) Fig. 6 Typical Gate Charge vs. V GE I CE = A If (A) 4 3 3 Tj = C Tj = C... 3 3. 4 Vf (V) Fig. 7 Typ. Diode Forward Characteristics tp = 8μs. ETOT tf Energy (mj).. EON EOFF Swiching Time (µs).. tdoff tdon tr Ic (A) Fig. 8 Typ. Energy Loss vs. I C T J = C; L=mH; V CE = 6V;R G = Ω; V GE = V. Ic (A) Fig. 9 Typ. Switching Time vs. I C T J = C; L=mH; V CE = 6V; R G = Ω; V GE = V.8. ETOT Tf Energy (mj)..9.6 EON EOFF Switching Time (µs).. Td(off) Td(on) Tr.3 3 4 Rg (Ω) Fig. 3 Typ. Energy Loss vs. R G T J = C; L=mH; V CE = 6V; I CE = A; V GE = V. 3 4 I C (A) Fig. 3 Typ. Switching Time vs. R G T J = C; L=mH; V CE = 6V; I CE = A; V GE = V www.irf.com 9
GBRFK Bulletin I778 /6 Brake 3 3 Rg=4.7Ω Rg=Ω Rg=Ω Rg=33Ω Rg=47Ω 3 3 Irr (A) Irr (A) If (A) 3 4 Rg (Ω ) Fig. 3 Typical Diode I RR vs. I F T J = C Fig. 33 Typical Diode I RR vs. R G T J = C; I F = A 3 3 Irr (A) 4 6 7 8 9 dif/dt (A/µs) Fig. 34 Typical Diode I RR vs. di F /dt; V CC = 6V; V GE = V; I CE = A; T J = C www.irf.com
GBRFK Bulletin I778 /6 Brake Thermal Response (ZthJC)....3.... SINGLE PULSE (THERMAL RESPONSE) Tτ J τ τ τ τ Ci= τi/ri Ci i/ri R R R R. E E4 E3 E E E t, Rectangular Pulse Duration (sec) Fig. 3 Maximum Transient Thermal Impedance, JunctiontoCase (Brake IGBT) T C Ri ( C/W).3.8679 τi (sec),43.649 Notes:. Duty Factor D = t/t. Peak Tj = P dm x Zthjc tc Thermal Response (ZthJC)...3.... R R R 3 R R R 3 T J T τ C J τ τ τ τ τ 3 τ 3 Ci= τi/ri Ci= i/ri Ri ( C/W)..49.447 τi (sec).7.438.738 Notes:. Duty Factor D = t/t. Peak Tj = P dm x Zthjc tc SINGLE PULSE (THERMAL RESPONSE). E E4 E3 E E E t, Rectangular Pulse Duration (sec) Fig. 36 Maximum Transient Thermal Impedance, JunctiontoCase (Brake DIODE) www.irf.com
GBRFK Bulletin I778 /6 R = V CC I CM diode clamp/ DUT L V GE ma I C V CC R G V DUT/ DRIVER V CC Fig.C.T. Gate Charge Circuit (turnoff) Fig.C.T. RBSOA Circuit diode clamp/ DUT L DUT V CC V DUT/ DRIVER V CC R G R G Fig.C.T.3 S.C. SOA Circuit Fig.C.T.4 Switching Loss Circuit R = V CC I CM DUT V CC R G Fig.C.T. Resistive Load Circuit www.irf.com
GBRFK Bulletin I778 /6 Econo PIM Package Outline Dimensions are shown in millimeters (inches) Econo PIM Part Marking Information LOT Made in Italy GBRFK Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 33 Kansas St., El Segundo, California 94, USA Tel: (3) 7 TAC Fax: (3) 793 Visit us at www.irf.com for sales contact information. /6 www.irf.com 3