WARP SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE SMPS IGBT PD - 9 IRGPB6PDPbF Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Lead-Free Features NPT Technology, Positive Temperature Coefficient Lower V CE (SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability G C E n-channel V CES = 6V V CE(on) typ. =.V @ V GE = V I C = 3.A Equivalent MOSFET Parameters R CE(on) typ. = mω I D (FET equivalent) = A Benefits Parallel Operation for Higher Current Applications Lower Conduction Losses and Switching Losses Higher Switching Frequency up to khz G CE TO-7AC Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I C @ T C = C Continuous Collector Current I C @ T C = C Continuous Collector Current I CM Pulse Collector Current (Ref. Fig. C.T.) I LM Clamped Inductive Load Current d A I F @ T C = C Diode Continous Forward Current 3 I F @ T C = C Diode Continous Forward Current I FRM Maximum Repetitive Forward Current e V GE Gate-to-Emitter Voltage ± V P D @ T C = C Maximum Power Dissipation W P D @ T C = C Maximum Power Dissipation 6 T J Operating Junction and - to + T STG Storage Temperature Range C Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-3 or M3 Screw lbf in (. N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT). C/W R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode). R θcs Thermal Resistance, Case-to-Sink (flat, greased surface). R θja Thermal Resistance, Junction-to-Ambient (typical socket mount) Weight 6 (.) g (oz) 7/7/
IRGPB6PDPbF Electrical Characteristics @ T J = C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = µa V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.3 V/ C V GE = V, I C = ma ( C- C) R G Internal Gate Resistance.3 Ω MHz, Open Collector..3 I C = 3A, V GE = V,,6,,9 V CE(on) Collector-to-Emitter Saturation Voltage.. V I C = A, V GE = V.6 3. I C = 3A, V GE = V, T J = C 3.3 3.7 I C = A, V GE = V, T J = C V GE(th) Gate Threshold Voltage 3... V I C = µa 7,,9 V GE(th) / TJ Threshold Voltage temp. coefficient - mv/ C V CE = V GE, I C =.ma gfe Forward Transconductance 9 S V CE = V, I C = A, PW = µs I CES Collector-to-Emitter Leakage Current. µa V GE = V, V CE = 6V. ma V GE = V, V CE = 6V, T J = C V FM Diode Forward Voltage Drop..7 V I F = A, V GE = V.3.6 I F = A, V GE = V, T J = C I GES Gate-to-Emitter Leakage Current ± na V GE = ±V, V CE = V Switching Characteristics @ T J = C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig Qg Total Gate Charge (turn-on) 6 I C = 3A 7 Q gc Gate-to-Collector Charge (turn-on) 36 nc V CC = V CT Q ge Gate-to-Emitter Charge (turn-on) V GE = V E on Turn-On Switching Loss 9 I C = 3A, V CC = 39V CT3 E off Turn-Off Switching Loss µj V GE = +V, R G = Ω, L = µh E total Total Switching Loss 9 T J = C f t d(on) Turn-On delay time 6 I C = 3A, V CC = 39V CT3 t r Rise time. 7. ns V GE = +V, R G = Ω, L = µh t d(off) Turn-Off delay time 3 T J = C f t f Fall time 6.. E on Turn-On Switching Loss 6 I C = 3A, V CC = 39V CT3 E off Turn-Off Switching Loss 9 µj V GE = +V, R G = Ω, L = µh,3 E total Total Switching Loss 3 T J = C f WF,WF t d(on) Turn-On delay time 9 I C = 3A, V CC = 39V CT3 t r Rise time 6.. ns V GE = +V, R G = Ω, L = µh, t d(off) Turn-Off delay time T J = C f WF,WF t f Fall time 3 7 C ies Input Capacitance 7 V GE = V 6 C oes Output Capacitance 3 V CC = 3V C res Reverse Transfer Capacitance pf f = Mhz C oes eff. Effective Output Capacitance (Time Related) g 9 V GE = V, V CE = V to V C oes eff. (ER) Effective Output Capacitance (Energy Related) g 76 T J = C, I C = A 3 RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = V, Vp =6V CT Rg = Ω, V GE = +V to V t rr Diode Reverse Recovery Time 6 ns T J = C I F = A, V R = V, 9 T J = C di/dt = A/µs Q rr Diode Reverse Recovery Charge nc T J = C I F = A, V R = V, 6 T J = C di/dt = A/µs I rr Peak Reverse Recovery Current 3. 6. A T J = C I F = A, V R = V, 9,,,.6 T J = C di/dt = A/µs CT Notes: R CE(on) typ. = equivalent on-resistance = V CE(on) typ. / I C, where V CE(on) typ. =.V and I C = 3A. I D (FET Equivalent) is the equivalent MOSFET I D rating @ C for applications up to khz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. V CC = % (V CES ), V GE = V, L = µh, R G = Ω. ƒ Pulse width limited by max. junction temperature. Energy losses include "tail" and diode reverse recovery. Data generated with use of Diode ETH6. C oes eff. is a fixed capacitance that gives the same charging time as C oes while V CE is rising from to % V CES. C oes eff.(er) is a fixed capacitance that stores the same energy as C oes while V CE is rising from to % V CES. www.irf.com
I CE (A) I CE (A) I C A) I CE (A) I C (A) P tot (W) 3 IRGPB6PDPbF 3 6 6 6 6 T C ( C) T C ( C) Fig. - Maximum DC Collector Current vs. Case Temperature Fig. - Power Dissipation vs. Case Temperature 3 3 V GE = V VGE = V VGE = V VGE =.V VGE = 6.V 3 6 Fig. 3 - Reverse Bias SOA T J = C; V GE =V Fig. - Typ. IGBT Output Characteristics T J = - C; tp = µs 3 3 V GE = V VGE = V VGE = V VGE =.V VGE = 6.V 3 3 V GE = V VGE = V VGE = V VGE = V VGE =.V 3 6 Fig. - Typ. IGBT Output Characteristics T J = C; tp = µs 3 6 Fig. 6 - Typ. IGBT Output Characteristics T J = C; tp = µs www.irf.com 3
Swiching Time (ns) I CE (A) IRGPB6PDPbF 3 3 T J = C T J = C V GE (V) 9 Fig. 7 - Typ. Transfer Characteristics V CE = V; tp = µs 9 7 6 3 V GE (V) I CE = A I CE = 3A I CE =.A Fig. - Typical V CE vs. V GE T J = C 7 6 3 I CE = A I CE = 3A I CE =.A Instantaneous Forward Current - I (A) F T J = C T J = C T J = C 3 V GE (V) Fig. 9 - Typical V CE vs. V GE T J = C Fig. - Typ. Diode Forward Characteristics tp = µs....6.. Forward Voltage Drop - V FM (V) Energy (µj) 3 E ON td OFF E OFF td ON t F t R I C (A) I C (A) Fig. - Typ. Energy Loss vs. I C T J = C; L = µh; V CE = 39V, R G = Ω; V GE = V. Diode clamp used: ETH6 (See C.T.3) Fig. - Typ. Switching Time vs. I C T J = C; L = µh; V CE = 39V, R G = Ω; V GE = V. Diode clamp used: ETH6 (See C.T.3) www.irf.com
V GE (V) Normalized V CE(on) (V) E oes (µj) Capacitance (pf) Energy (µj) Swiching Time (ns) IRGPB6PDPbF E ON td OFF E OFF td ON t F t R 3 3 3 R G (Ω) R G (Ω) Fig. 3 - Typ. Energy Loss vs. R G T J = C; L = µh; V CE = 39V, I CE = 3A; V GE = V Diode clamp used: ETH6 (See C.T.3) Fig. - Typ. Switching Time vs. R G T J = C; L = µh; V CE = 39V, I CE = 3A; V GE = V Diode clamp used: ETH6 (See C.T.3) 6 Cies Coes 6 Cres 3 6 7 6 6 Fig. - Typ. Output Capacitance Stored Energy vs. V CE.6 Fig. 6- Typ. Capacitance vs. V CE V GE = V; f = MHz V...3.. 6 3 6 7 Q G, Total Gate Charge (nc).6 - T J, Junction Temperature ( C) Fig. 7 - Typical Gate Charge vs. V GE Fig. - Normalized Typical V CE(on) vs. I CE = 3A Junction Temperature I CE = 3A, V GE = V www.irf.com.9..7
IRGPB6PDPbF trr- (nc) 6 I = 6A F I F =.A I F =.A Irr- ( A) 6 V R = V T J = C T J = C I = 6A F I F =.A I F =.A V R = V T J = C T J = C di f /dt - (A/µs) Fig. 9 - Typical Reverse Recovery vs. di f /dt di f/dt - (A/µs) Fig. - Typical Recovery Current vs. di f /dt V R= V T J = C T J = C V R = V T J = C T J = C I F = 6A Qrr- (nc) 3 I F =.A I F =.A di (rec) M/dt- (A /µs) I F = 6A I F =.A I F =.A di f /dt - (A/µs) Fig. - Typical Stored Charge vs. di f /dt di f /dt - (A/µs) Fig. - Typical di (rec)m /dt vs. di f /dt, 6 www.irf.com
Thermal Response ( Z thjc ) IRGPB6PDPbF D =........ R R R R R 3 R 3 τ J τ J τ τ τ τ τ 3 τ 3 Ci= τi/ri Ci i/ri R R Ri ( C/W) τi (sec).3.3.779.6 SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t. Peak Tj = P dm x Zthjc + Tc τ τ τ C τ..3.39.97. E-6 E-.... t, Rectangular Pulse Duration (sec) Fig 3. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thjc ).. D =...... R R R R τ J τ J τ τ τ τ Ci= τi/ri Ci i/ri Ri ( C/W) τi (sec).667..639.76 SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t. Peak Tj = P dm x Zthjc + Tc τ C τ. E-6 E-.... t, Rectangular Pulse Duration (sec) Fig.. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7
IRGPB6PDPbF L K DUT L VCC V Rg DUT V Fig.C.T. - Gate Charge Circuit (turn-off) Fig.C.T. - RBSOA Circuit PFC diode L R = VCC ICM Rg DUT / DRIVER VCC Rg DUT VCC Fig.C.T.3 - Switching Loss Circuit Fig.C.T. - Resistive Load Circuit REVERSE RECOVERY CIRCUIT V R = V. Ω dif/dt ADJUST L = 7µH G D IRFP D.U.T. S Fig. C.T. - Reverse Recovery Parameter Test Circuit www.irf.com
IRGPB6PDPbF 3 tf 6 3 TEST CURRENT 3 3 3 3 9% I CE tr VCE (V) % V CE 6 ICE (A) VCE (V) 9% test current % test current ICE (A) % I CE % V CE - Eoff Loss -.....6. Time(µs) Fig. WF - Typ. Turn-off Loss Waveform @ T J = C using Fig. CT.3 - - Eon Loss 7.7 7. 7.9.. Time (µs) Fig. WF - Typ. Turn-on Loss Waveform @ T J = C using Fig. CT.3-3 I F t a trr t b Q rr I RRM. I RRM di(rec)m/dt.7 I RRM di /dt f. di f/dt - Rate of change of current through zero crossing. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.7 I RRM and. I RRM extrapolated to zero current. Q rr - Area under curve defined by t rr and I RRM t rr X I RRM Q rr =. di (rec)m/dt - Peak rate of change of current during t b portion of t rr Fig. WF3 - Reverse Recovery Waveform and Definitions www.irf.com 9
IRGPB6PDPbF TO-7AC Package Outline Dimensions are shown in millimeters (inches) TO-7AC Part Marking Information EXAMPLE: THIS IS AN IRFPE3 WITH ASSEMBLY LOT CODE 67 ASSEMBLED ON WW 3, IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPE3 3H 6 7 PART NUMBER DATE CODE YEAR = WEEK 3 LINE H TO-7AC package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 33 Kansas St., El Segundo, California 9, USA Tel: (3) -7 TAC Fax: (3) -793 Visit us at www.irf.com for sales contact information. 7/ www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/