INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA % of the parts tested for I LM Positive V CE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to low V CE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation Applications U.P.S. Welding Solar Inverter G C E n-channel IRG7PH35UDPbF IRG7PH35UD-EP G C E TO-247AC IRG7PH35UDPbF TO-247AD IRG7PH35UD-EP Induction Heating G C E Gate Collector Emitter Absolute Maximum Ratings C V CES = 2V I NOMINAL = 2A T J(max) = 5 C V CE(on) typ. =.9V Parameter Max. Units V CES Collector-to-Emitter Voltage 2 V I C @ T C = 25 C Continuous Collector Current 5 I C @ T C = C Continuous Collector Current 25 I NOMINAL Nominal Current 2 I CM Pulse Collector Current, V GE =5V 6 I LM Clamped Inductive Load Current, V GE =2V c 8 A I F @ T C = 25 C Diode Continous Forward Current 5 I F @ T C = C Diode Continous Forward Current 25 I FM Diode Maximum Forward Current d 8 V GE Continuous Gate-to-Emitter Voltage ±3 V P D @ T C = 25 C Maximum Power Dissipation 8 P D @ T C = C Maximum Power Dissipation 7 W T J Operating Junction and -55 to +5 T STG Storage Temperature Range C Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw lbf in (. N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) f.7 R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode).65 C/W R θcs Thermal Resistance, Case-to-Sink (flat, greased surface).24 R θja Thermal Resistance, Junction-to-Ambient (typical socket mount) 4 C G C E PD-96288 www.irf.com 2/8/
IRG7PH35UDPbF/IRG7PH35UD-EP Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 2 V V GE = V, I C = 25µA e V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.2 V/ C V GE = V, I C = ma (25 C-5 C) V CE(on) Collector-to-Emitter Saturation Voltage.9 2.2 V I C = 2A, V GE = 5V, T J = 25 C 2.3 I C = 2A, V GE = 5V, T J = 5 C V GE(th) Gate Threshold Voltage 3. 6. V V CE = V GE, I C = 6µA V GE(th) / TJ Threshold Voltage temp. coefficient -6 mv/ C V CE = V GE, I C = 6µA (25 C - 5 C) gfe Forward Transconductance 22 S V CE = 5V, I C = 2A, PW = 3µs I CES Collector-to-Emitter Leakage Current 2. µa V GE = V, V CE = 2V 2 V GE = V, V CE = 2V, T J = 5 C V FM Diode Forward Voltage Drop 2.8 3.6 V I F = 2A 2.5 I F = 2A, T J = 5 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±3V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 85 3 I C = 2A Q ge Gate-to-Emitter Charge (turn-on) 5 2 nc V GE = 5V Q gc Gate-to-Collector Charge (turn-on) 35 5 V CC = 6V E on Turn-On Switching Loss 6 3 I C = 2A, V CC = 6V, V GE = 5V E off Turn-Off Switching Loss 62 85 µj R G = Ω, L = 2uH, L S = 5nH, T J = 25 C E total Total Switching Loss 68 25 Energy losses include tail & diode reverse recovery t d(on) Turn-On delay time 3 5 I C = 2A, V CC = 6V, V GE = 5V t r Rise time 5 3 ns R G = Ω, L = 2uH, L S = 5nH, T J = 25 C t d(off) Turn-Off delay time 6 8 t f Fall time 8 5 E on Turn-On Switching Loss 75 I C = 2A, V CC = 6V, V GE =5V E off Turn-Off Switching Loss 2 µj R G =Ω, L=2uH, L S =5nH, T J = 5 C e E total Total Switching Loss 287 Energy losses include tail & diode reverse recovery t d(on) Turn-On delay time 3 I C = 2A, V CC = 6V, V GE = 5V t r Rise time 5 ns R G = Ω, L = 2uH, L S = 5nH t d(off) Turn-Off delay time 9 T J = 5 C t f Fall time 2 C ies Input Capacitance 94 pf V GE = V C oes Output Capacitance 2 V CC = 3V C res Reverse Transfer Capacitance 4 f =.Mhz T J = 5 C, I C = 8A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 96V, Vp =2V Rg = Ω, V GE = +2V to V Erec Reverse Recovery Energy of the Diode 79 µj T J = 5 C t rr Diode Reverse Recovery Time 5 ns V CC = 6V, I F = 2A I rr Peak Reverse Recovery Current 4 A V GE = 5V, Rg = Ω, L =.mh, L s = 5nH Notes: V CC = 8% (V CES ), V GE = 2V, R G = 5Ω. Pulse width limited by max. junction temperature. ƒ Refer to AN-86 for guidelines for measuring V (BR)CES safely. R θ is measured at T J of approximately 9 C. 2 www.irf.com
I C (A) I C (A) I C (A) Load Current ( A ) P tot (W) IRG7PH35UDPbF/IRG7PH35UD-EP 45 4 35 3 Square Wave: For both: Duty cycle : 5% Tj = 5 C Tc = C Gate drive as specified Power Dissipation = 7W 25 V CC 2 5 I Diode as specified 5. f, Frequency ( khz ) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 6 2 5 4 5 3 2 5 Fig. 2 - Maximum DC Collector Current vs. Case Temperature 25 5 75 25 5 T C ( C) 2 4 6 8 2 4 6 T C ( C) Fig. 3- Power Dissipation vs. Case Temperature µsec DC µsec msec. Tc = 25 C Tj = 5 C Single Pulse. Fig. 4 - Forward SOA T C = 25 C, T J 5 C; V GE =5V Fig. 5 - Reverse Bias SOA T J = 5 C; V GE = 2V www.irf.com 3
I CE (A) I F (A) I CE (A) I CE (A) IRG7PH35UDPbF/IRG7PH35UD-EP 8 V 7 GE = 8V V GE = 5V 6 V GE = 2V V GE = V 5 V GE = 8.V 4 8 7 6 5 4 V GE = 8V V GE = 5V V GE = 2V V GE = V V GE = 8.V 3 3 2 2 2 4 6 8 2 4 6 8 Fig. 6- Typ. IGBT Output Characteristics T J = -4 C; tp = 3µs Fig. 7 - Typ. IGBT Output Characteristics T J = 25 C; tp = 3µs 8 8 7 6 5 V GE = 8V V GE = 5V V GE = 2V V GE = V V GE = 8.V 7 6 5-4 C 25 C 5 C 4 4 3 2 2 4 6 8 Fig. 8 - Typ. IGBT Output Characteristics T J = 5 C; tp = 3µs 8 7 6 3 2 2 3 4 5 6 V F (V) Fig. 9 - Typ. Diode Forward Characteristics tp = 38µs 8 7 6 5 4 3 I CE = A I CE = 2A I CE = 4A 5 4 3 I CE = A I CE = 2A I CE = 4A 2 2 4 8 2 6 2 V GE (V) 5 5 2 V GE (V) Fig. - Typical V CE vs. V GE T J = -4 C Fig. - Typical V CE vs. V GE T J = 25 C 4 www.irf.com
Energy (µj) Swiching Time (ns) Swiching Time (ns) IRG7PH35UDPbF/IRG7PH35UD-EP 8 7 I C, Collector-to-Emitter Current (A) 8 7 6 5 4 I CE = A I CE = 2A I CE = 4A 6 5 4 3 T J = 5 C 3 2 2 T J = 25 C 5 5 2 4 5 6 7 8 9 V GE (V) V GE, Gate-to-Emitter Voltage (V) 4 Fig. 2 - Typical V CE vs. V GE T J = 5 C Fig. 3 - Typ. Transfer Characteristics V CE = 5V, tp = 3µs td OFF 3 E ON t F Energy (µj) 2 td ON E OFF t R 2 3 4 2 3 4 I C (A) I C (A) Fig. 4 - Typ. Energy Loss vs. I C T J = 5 C; L = 68µH; V CE = 6V, R G = Ω; V GE = 5V 35 Fig. 5 - Typ. Switching Time vs. I C T J = 5 C; L = 68µH; V CE = 6V, R G = Ω; V GE = 5V 3 25 E ON td OFF 2 t F 5 E OFF td ON t R 5 2 4 6 8 2 4 6 8 R G (Ω) R G (Ω) Fig. 6 - Typ. Energy Loss vs. R G T J = 5 C; L = 68µH; V CE = 6V, I CE = 2A; V GE = 5V Fig. 7 - Typ. Switching Time vs. R G T J = 5 C; L = 68µH; V CE = 6V, I CE = 2A; V GE = 5V www.irf.com 5
V GE(th), Energy (µj) Gate Threshold Voltage (Normalized) I RR (A) Q RR (µc) I RR (A) I RR (A) IRG7PH35UDPbF/IRG7PH35UD-EP 6 5 5 R G = 5.Ω 45 4 R G = Ω 4 3 R G = 47Ω R G = Ω 35 3 2 25 5 2 25 3 35 4 I F (A) 2 2 4 6 8 R G (Ω) Fig. 8 - Typ. Diode I RR vs. I F T J = 5 C Fig. 9 - Typ. Diode I RR vs. R G T J = 5 C 55 6 5 45 5 4 4A Ω 5.Ω 4 35 3 3 2 Ω 47Ω 2A A 25 2 2 4 6 8 2 4 6 di F /dt (A/µs) Fig. 2 - Typ. Diode I RR vs. di F /dt V CC = 6V; V GE = 5V; I F = 2A; T J = 5 C 2 4 6 8 2468 di F /dt (A/µs) Fig. 2 - Typ. Diode Q RR vs. di F /dt V CC = 6V; V GE = 5V; T J = 5 C 2 R G = 5.Ω 5. I C = 6µA R G = Ω 5 R G = 47Ω 4. R G = Ω 3. 5 2. 5 2 25 3 35 4 I F (A) Fig. 22 - Typ. Diode E RR vs. I F T J = 5 C. 25 5 75 25 5 75 T J, Temperature ( C) Fig. 23 - Typical Gate Threshold Voltage (Normalized) vs. Junction Temperature 6 www.irf.com
Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) IRG7PH35UDPbF/IRG7PH35UD-EP 6 Cies 4 2 V CES = 6V V CES = 4V 8 Coes 6 4 Cres 2 2 3 4 5 6 2 4 6 8 Q G, Total Gate Charge (nc) Fig. 23 - Typ. Capacitance vs. V CE V GE = V; f = MHz Fig. 24 - Typical Gate Charge vs. V GE I CE = 2A; L = 2.4mH D =.5..2. Thermal Response ( Z thjc ) Thermal Response ( Z thjc )..5.2. SINGLE PULSE ( THERMAL RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri. E-6 E-5.... t, Rectangular Pulse Duration (sec)... Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) D =.5.2..5.2. R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE).77.37 Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc www.irf.com 7 R 4 R 4 τ 4 τ 4 τ C τ Ri ( C/W) τi (sec).7.3.28.4.299.284 SINGLE PULSE Notes: ( THERMAL RESPONSE ). Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E-5.... t, Rectangular Pulse Duration (sec) R 4 R 4 τ 4 τ 4 τ C τ Ri ( C/W) τi (sec).5.43.235.48.28.3593.3.2382
IRG7PH35UDPbF/IRG7PH35UD-EP L L K DUT VCC 8 V + - Rg DUT VCC Fig.C.T. - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT R = VCC ICM L -5V Rg DUT / DRIVER VCC Rg DUT VCC Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit C force K D 22K C sense G force DUT.75µF E sense E force Fig.C.T.5 - BVCES Filter Circuit 8 www.irf.com
IRG7PH35UDPbF/IRG7PH35UD-EP 8 4 8 8 7 tf 35 7 tr 7 6 3 6 TEST CURRENT 6 5 9% I CE 25 5 5 VCE (V) 4 3 2 5 ICE (A) VCE (V) 4 3 9% test current 4 3 ICE (A) 2 5% V CE 5% I CE 5 2 % test current 5% V CE 2 - Eoff Loss -.5.5.5 2 time(µs) Fig. WF - Typ. Turn-off Loss Waveform @ T J = 5 C using Fig. CT.4-5 - Eon Loss -.3 -...3.5 time (µs) Fig. WF2 - Typ. Turn-on Loss Waveform @ T J = 5 C using Fig. CT.4-3 2 E REC t RR VF (V) - -2-3 Peak I RR % Peak IRR -4-5 -.25 -.5.5.35.55 time (µs) Fig. WF3 - Typ. Diode Recovery Waveform @ T J = 5 C using Fig. CT.4 www.irf.com 9
IRG7PH35UDPbF/IRG7PH35UD-EP TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information @Y6HQG@) UCDTDT6IDSAQ@" XDUC6TT@H7G` GPU8P9@$%$& DIU@SI6UDPI6G Q6SUIVH7@S 6TT@H7G@9PIXX"$! DIUC@6TT@H7G`GDI@C S@8UDAD@S GPBP,5)3( + 96U@8P9@ I r)qv h r iy yv rƒ v v v qvph r GrhqA rr 6TT@H7G` GPU8P9@ `@6S 2! X@@F"$ GDI@C TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com
IRG7PH35UDPbF/IRG7PH35UD-EP TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information (;$3/( 7+,6,6$,5*3%.'( :,7+$66(%/< /27&2'( $66(%/('2::,7+($66(%/</,(+ RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,7(5$7,2$/ 5(&7,),(5 /2*2 Ã+ ÃÃÃÃÃÃÃÃÃÃÃ 3$578%(5 '$7(&2'( $66(%/< <($5 /27&2'( :((. /,(+ TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) 252-75 TAC Fax: (3) 252-793 Visit us at www.irf.com for sales contact information. 2/2 www.irf.com