INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE on) Non Punch Through IGBT Technology. µs Short Circuit Capability. Square RBSOA. Positive VCE on) Temperature Coefficient. Maximum Junction Temperature rated at C. Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. G C E n-channel IRGB3BK IRGS3BK IRGSL3BK V CES = V PD - 9499A I C = A, T C = C at T J = C t sc > µs, T J = C V CEon) typ. =.9V TO-AB IRGB3BK D Pak IRGS3BK TO- IRGSL3BK Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage V I C @ T C = C Continuous Collector Current 8g I C @ T C = C Continuous Collector Current A I CM Pulse Collector Current Ref.Fig.C.T.) I LM Clamped Inductive Load current c V ISOL RMS Isolation Voltage, Terminal to Case, t= min. V V GE Gate-to-Emitter Voltage ± P D @ T C = C Maximum Power Dissipation 3 W P D @ T C = C Maximum Power Dissipation 8 T J Operating Junction and - to + T STG Storage Temperature Range C Soldering Temperature, for sec. 3.3 in..mm) from case) Mounting Torque, -3 or M3 Screw lbf in. N m) Thermal Mechanical Characteristics Parameter Min. Typ. Max. Units R θjc Junction-to-Case- IGBT.4 CW R θcs Case-to-Sink, flat, greased surface. R θja Junction-to-Ambient, typical socket mount d R θja Junction-to-Ambient PCB Mount, Steady State)e 4 Wt Weight.44 g www.irf.com 4
Electrical Characteristics @ T J = C unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig. V BR)CES Collector-to-Emitter Breakdown Voltage V V GE = V, I C = µa V BR)CES T J Temperature Coeff. of Breakdown Voltage.4 V C V GE = V, I C = ma C- C).9.3 I C = 3A, V GE = V, T J = C,, V CEon) Collector-to-Emitter Voltage.4. V I C = 3A, V GE = V, T J = C 8,9,..9 I C = 3A, V GE = V, T J = C V GEth) Gate Threshold Voltage 3. 4.. V V CE = V GE, I C = µa 8,9, V GEth) T J Threshold Voltage temp. coefficient - mv C V CE = V GE, I C =.ma C- C) gfe Forward Transconductance 8 S V CE = V, I C = A, PW = 8µs. V GE = V, V CE = V I CES Zero Gate Voltage Collector Current µa V GE = V, V CE = V, T J = C 83 3 V GE = V, V CE = V, T J = C I GES Gate-to-Emitter Leakage Current ± na V GE = ±V, V CE = V Switching Characteristics @ T J = C unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig. Q g Total Gate Charge turn-on) 3 I C = 3A Q ge Gate-to-Emitter Charge turn-on) 4 nc V CC = 4V CT Q gc Gate-to-Collector Charge turn-on) 44 V GE = V E on Turn-On Switching Loss 3 I C = 3A, V CC = 4V CT4 E off Turn-Off Switching Loss 8 9 µj V GE = V, R G = Ω, L = µh E tot Total Switching Loss T J = C f t don) Turn-On delay time 4 I C = 3A, V CC = 4V t r Rise time 8 39 ns V GE = V, R G = Ω, L = µh CT4 t doff) Turn-Off delay time 8 T J = C t f Fall time 3 4 E on Turn-On Switching Loss 3 8 I C = 3A, V CC = 4V CT4 E off Turn-Off Switching Loss 3 µj V GE = V, R G = Ω, L = µh,4 E tot Total Switching Loss 8 43 T J = C f WF,WF t don) Turn-On delay time 4 I C = 3A, V CC = 4V 3, t r Rise time 8 39 ns V GE = V, R G = Ω, L = µh CT4 t doff) Turn-Off delay time 3 T J = C WF t f Fall time 3 4 WF L E Internal Emitter Inductance. nh Measured mm from package C ies Input Capacitance V GE = V C oes Output Capacitance pf V CC = 3V C res Reverse Transfer Capacitance 9 f =.MHz RBSOA Reverse Bias Safe Operating Area FULL SQUARE T J = C, I C = A, Vp = V 4 V CC =V,V GE = +V to V,R G =Ω CT SCSOA Short Circuit Safe Operating Area µs T J = C, Vp = V, R G = Ω CT3 V CC =3V,V GE = +V to V I SC Peak) Peak Short Circuit Collector Current A WF3 WF3 Note to are on page 3 www.irf.com
I C A) I C A) I C A) P tot W) 8 4 4 3 3 3 4 8 4 8 4 8 4 8 T C C) T C C) Fig. - Maximum DC Collector Current vs. Case Temperature Fig. - Power Dissipation vs. Case Temperature µs µs ms DC. Fig. 3 - Forward SOA T C = C; T J C Fig. 4 - Reverse Bias SOA T J = C; V GE =V www.irf.com 3
I CE A) I CE A) I CE A) 4 V GE = 8V V GE = V V GE = V V GE = V V GE = 8.V 4 V GE = 8V V GE = V V GE = V V GE = V V GE = 8.V 3 3 3 4 3 4 Fig. - Typ. IGBT Output Characteristics T J = -4 C; tp = 8µs Fig. - Typ. IGBT Output Characteristics T J = C; tp = 8µs 4 3 V GE = 8V V GE = V V GE = V V GE = V V GE = 8.V 3 4 Fig. - Typ. IGBT Output Characteristics T J = C; tp = 8µs 4 www.irf.com
I CE A) 8 8 4 4 8 I CE = A I CE = 3A I CE = A 8 I CE = A I CE = 3A I CE = A 4 4 V GE V) V GE V) Fig. 8 - Typical V CE vs. V GE T J = -4 C Fig. 9 - Typical V CE vs. V GE T J = C 8 T J = C T J = C 4 8 I CE = A I CE = 3A I CE = A 4 T J = C T J = C V GE V) V GE V) Fig. - Typical V CE vs. V GE T J = C Fig. - Typ. Transfer Characteristics V CE = V; tp = µs www.irf.com
Energy µj) Swiching Time ns) Swiching Time ns) 3 Energy µj) td OFF E OFF E ON td ON t F t R 4 8 I C A) 4 8 I C A) Fig. - Typ. Energy Loss vs. I C T J = C; L=µH; V CE = 4V, R G = Ω; V GE = V Fig. 3 - Typ. Switching Time vs. I C T J = C; L=µH; V CE = 4V R G = Ω; V GE = V 3 E OFF td OFF E ON td ON t F t R R G Ω) R G Ω) Fig. 4 - Typ. Energy Loss vs. R G T J = C; L=µH; V CE = 4V I CE = 3A; V GE = V Fig. - Typ. Switching Time vs. R G T J = C; L=µH; V CE = 4V I CE = 3A; V GE = V www.irf.com
Capacitance pf) V GE V) Cies 4 V 4V 8 Coes 4 Cres 4 8 Q G, Total Gate Charge nc) Fig. - Typ. Capacitance vs. V CE V GE = V; f = MHz Fig. - Typical Gate Charge vs. V GE I CE = 3A; L = µh Thermal Response Z thjc ).... D =...... SINGLE PULSE THERMAL RESPONSE ) R R R R τ J τ J τ τ τ τ Ci= τiri Ci iri E- E-.... t, Rectangular Pulse Duration sec) Ri CW) τi sec)..48.9.33 Notes:. Duty Factor D = tt. Peak Tj = P dm x Zthjc + Tc Fig 8. Maximum Transient Thermal Impedance, Junction-to-Case IGBT) τ C τ www.irf.com
L K DUT L VCC 8 V + - Rg DUT 48V Fig.C.T. - Gate Charge Circuit turn-off) Fig.C.T. - RBSOA Circuit Driver diode clamp DUT L DC DUT 3V - V Rg DUT DRIVER VCC Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit R = VCC ICM Rg DUT VCC Fig.C.T. - Resistive Load Circuit 8 www.irf.com
3 3 9 I CE tf TEST CURRENT 4 4 4 VCE V) 3 V CE I CE ICE A) VCE V) 3 tr 9 test current test current V CE 3 ICE A) - Eoff Loss -....4..8 Timeµs) Fig. WF- Typ. Turn-off Loss Waveform @ T J = C using Fig. CT.4 - - Eon Loss.9....3 Time µs) - Fig. WF- Typ. Turn-on Loss Waveform @ T J = C using Fig. CT.4 3 4 I CE VCE V) 3 V CE ICE A) -..... time µs) Fig. WF3- Typ. S.C Waveform @ T C = C using Fig. CT.3 www.irf.com 9
TO-AB Package Outline Dimensions are shown in millimeters inches).8.3)..3).4.4).9.4) 3.8.49) 3.4.39) - A - 4.9.8) 4..) - B -.3.)..48).4.) 4.84.84) 4.4.)..4) LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 3..4) MIN - GATE LEAD ASSIGNMENTS - GATE - DRAIN - GATE - COLLECTOR 3- SOURCE - DRAIN 3- EMITTER 4- DRAIN3 - SOURCE 4- COLLECTOR 4 - DRAIN 4.9.) 3.4.3) 4..) 3..4) 3X.4.)..4).4.) X NOTES: 3X.93.3).9.).3.4) M B A M 3X.9.).4.4)..).4.8) DIMENSIONING TOLERANCING PER ANSI Y4.M, 98. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-AB. CONTROLLING DIMENSION : INCH 4 HEATSINK LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-AB Part Marking Information 8 3 <., :,,,) *, < ),,, + 3 ;, : : < +, www.irf.com
8 3 +, : ),,, +,, ),,) : : *, < +, < <. :, D Pak Package Outline Dimensions are shown in millimeters inches) D Pak Part Marking Information www.irf.com
TO- Package Outline Dimensions are shown in millimeters inches) IGBT - GATE - COLLECTOR 3- EMITTER 4- COLLECTOR TO- Part Marking Information,,, + 3 ; 8 3., < :,,,) *,, : : < +, www.irf.com
D Pak Tape Reel Information Dimensions are shown in millimeters inches) TRR..3)..9) 4..) 3.9.3)..3)..9).38.4).34.3) FEED DIRECTION TRL.8.3)..).9.49)..4)..4).4.449)..34).9.)..9)..49).4.9)..) 4.3.9) 3.9.94) 4..3) 4..8) FEED DIRECTION 3..3).8.4).4.9) 3.9.94) 4 33. 4.3) MAX...3) MIN. Notes: NOTES :. COMFORMS TO EIA-48.. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE..4.39) 4.4.9) 3 3.4.9) MAX. 4 V CC = 8 V CES ), V GE = V, L = 8µH, R G = Ω. This is only applied to TO-AB package. ƒ This is applied to D Pak, when mounted on " square PCB FR-4 or G- Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Energy losses include "tail" and diode reverse recovery. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is A. TO-AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 33 Kansas St., El Segundo, California 94, USA Tel: 3) - TAC Fax: 3) -93 Visit us at www.irf.com for sales contact information. 4 www.irf.com 3
Note: For the most current drawings please refer to the IR website at: http:www.irf.compackage