Parameter Test condition Symbol Value Unit Zener current (see Table "Electrical Characteristics") Power dissipation P tot 1.3

Similar documents
Part Ordering code Type Marking Remarks 1N4148 1N4148-TAP or 1N4148-TR V4148 Ammopack/tape and reel

BAV100/101/102/103. Small Signal Switching Diodes, High Voltage. Vishay Semiconductors

Part Ordering code Marking Remarks 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Tape and Reel

Parameter Test condition Symbol Value Unit Junction to ambient air on PC board. R thja 500 K/W 50 mm x 50 mm x 1.6 mm

Part Ordering code Type Marking Remarks LL42 LL42-GS18 or LL42-GS08 - Tape and Reel LL43 LL43-GS18 or LL43-GS08 - Tape and Reel

LL4148 / LL4448. Small Signal Fast Switching Diodes. Vishay Semiconductors

BAV300 / 301 / 302 / 303

BAV17/18/19/20/21. Small Signal Switching Diodes, High Voltage. Vishay Semiconductors

Part Ordering code Type Marking Remarks BAT46 BAT46-TR or BAT46-TAP BAT46 Tape and Reel/Ammopack

Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit Power dissipation P tot 300 1) mw

LL4148 / LL4448. Small Signal Fast Switching Diodes. Vishay Semiconductors

BYT52. Fast Avalanche Sinterglass Diode. Vishay Semiconductors

Part Type differentiation Package 1N5550 V RRM = 200 V G-4 1N5551 V RRM = 400 V G-4 1N5552 V RRM = 600 V G-4

Zener Diodes FEATURES APPLICATIONS. MINIMUM ORDER QUANTITY BZX85-series BZX85-series-TR 5000 (52 mm tape on 13" reel) /box

Parameter Test condition Symbol Value Unit Junction ambient 1) R thja 300 K/W

BYW52 / 53 / 54 / 55 / 56

Subminiature Transmissive Optical Sensor with Phototransistor Output, RoHS Compliant, Released for Lead (Pb)-free Solder Process

Parameter Test condition Symbol Value Unit Junction ambient l = 4 mm, T L = constant R thja 300 K/W

Parameter Test condition Symbol Value Unit Power dissipation P tot 300 1) mw

SFH612A/ SFH655A. Pb Pb-free. Optocoupler, Photodarlington Output. Vishay Semiconductors

TLWR9.2. TELUX. Vishay Semiconductors

SFH615A/SFH6156. Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS. Vishay Semiconductors

Small Signal Fast Switching Diode

CNY17F-4. Pb Pb-free. Optocoupler, Phototransistor Output, No Base Connection. Vishay Semiconductors

Small Signal Zener Diodes, Dual

TEMD5020. Silicon PIN Photodiode. Vishay Semiconductors

Small Signal Fast Switching Diode

BC546 / 547 / 548. Small Signal Transistors (NPN) Vishay Semiconductors

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

Optocoupler, Phototransistor Output, with Base Connection

BYW52 / 53 / 54 / 55 / 56

Small Signal Fast Switching Diode

BPW82. Silicon PIN Photodiode. Vishay Telefunken. Description. Features. Applications High speed photo detector. Absolute Maximum Ratings

Small Signal Fast Switching Diode FEATURES

Parameter Test condition Symbol Value Unit. Mounted on epoxy-glass hard tissue, fig µm copper clad, 0.9 mm 2 copper area per electrode

BPW24R. Silicon PIN Photodiode. Vishay Telefunken. Description. Features. Applications High speed photo detector. Absolute Maximum Ratings

TSUS540. Infrared Emitting Diode, 950 nm, GaAs VISHAY. Vishay Semiconductors

BPW20RF. Silicon PN Photodiode. Vishay Semiconductors. Description. Features. Applications. Absolute Maximum Ratings

e3 Pb TLRG / H / O / P / Y440. Resistor LED for 12 V Supply Voltage VISHAY Vishay Semiconductors

BPW34. Silicon PIN Photodiode. Vishay Telefunken. Description. Features. Applications High speed photo detector. Absolute Maximum Ratings

Small Signal Zener Diodes, Dual

TLCW5100. Ultrabright White LED, 5 mm Untinted Non-Diffused VISHAY. Vishay Semiconductors

Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35m Cu

RF amplifier up to GHz range specially for wide band antenna amplifier.

Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm 3 R thja 450 K/W plated with 35m Cu

BYT54. Fast Avalanche Sinterglass Diode VISHAY. Vishay Semiconductors

TEMD5000. Silicon PIN Photodiode. Vishay Semiconductors. Description. Features. Applications High speed photo detector. Absolute Maximum Ratings

RF amplifier up to GHz range specially for wide band antenna amplifier.

BPW24R. Silicon PIN Photodiode. Vishay Telefunken. Description. Features. Applications High speed photo detector. Absolute Maximum Ratings

SFH615A / SFH6156. Pb Pb-free. Optocoupler, High Reliability, 5300 V RMS VISHAY. Vishay Semiconductors

BFS17/BFS17R/BFS17W. Silicon NPN Planar RF Transistor. Vishay Telefunken. Applications. Features

T j = 25 C Parameter Test Conditions Type Symbol Value Unit Reverse voltage, repetitive peak

e3 Pb TLRG / H / O / Y4420 Resistor LED for 12 V Supply Voltage VISHAY Vishay Semiconductors

GaAs Infrared Emitting Diodes in ø 5 mm (T 1) Package

Small Signal Zener Diodes

LH1522AB/ AAC/ AACTR. Pb Pb-free. Dual 1 Form A Solid State Relay. Vishay Semiconductors

Small Signal Zener Diodes

BFQ65. Silicon NPN Planar RF Transistor. Applications. Features. Absolute Maximum Ratings. Maximum Thermal Resistance

Low Current 13 mm Seven Segment Display

Transmissive Optical Sensor without Aperture

Small Signal Zener Diodes

Transmissive Optical Sensor with Phototransistor Output

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

High Intensity LED, ø 5 mm Untinted Non-Diffused

Small Signal Zener Diodes, Dual

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Small Signal Zener Diodes

Reflective Optical Sensor with Transistor Output

Small Signal Zener Diodes

TLMPG / TLMYG330. Power SMD LED in PLCC-2 Package VISHAY. Vishay Semiconductors

e3 Pb TLMO / S / Y300. Low Current SMD LED VISHAY Vishay Semiconductors

Subminiature Transmissive Optical Sensor with Phototransistor Output

Zener Diodes FEATURES APPLICATIONS

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode. Low feedback capacitance Low noise figure

Multichannel Optocoupler with Phototransistor Output

N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

e3 Pb TLMK310. High Intensity SMD LED VISHAY Vishay Semiconductors

Power SMD LED CLCC-6 Warm White

TLCR5800, TLCY5800, TLCTG5800, TLCB5800

N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Small Signal Zener Diodes

Silicon PIN Photodiode, RoHS Compliant

Silicon PIN Photodiode

LH1532AAC/ AACTR/ AB. Pb Pb-free. Dual 1 Form A Solid State Relay. Vishay Semiconductors

Silicon PIN Photodiode

Small Signal Zener Diodes

Surface Mount ESD Capability Rectifiers

MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 Optocoupler, Phototransistor Output, no Base Connection

Optocoupler, Phototransistor Output, no Base Connection

4N35/ 4N36/ 4N37/ 4N38

4N25/ 4N26/ 4N27/ 4N28

Color Type Technology

Applications LED READY = READY LED READY LED. Charge mode indicator. max 140 C Shunt Sense Osc. Figure 1 Block diagram with external circuit

Silicon PIN Photodiode

Hyperfast Rectifier, 1 A FRED Pt

TCLT10.. Series. Optocoupler with Phototransistor Output. Vishay Semiconductors. Description. Applications. VDE Standards

ILD620/ 620GB / ILQ620/ 620GB

Silicon PIN Photodiode

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.43 V at I F = 5 A

Silicon PIN Photodiode

Transcription:

Zener Diodes Features Silicon Planar Power Zener Diodes For use in stabilizing and clipping circuits with high power rating e The Zener voltages are graded according to the international E standard. Replace suffix "C" with "B" for ± % tolerance Lead (Pb)-free component Component in accordance to RoHS /9/EC and WEEE /96/EC Applications Voltage stabilization Mechanical Data Case: DO Glass case Weight: approx. mg Cathode Band Color: black Packaging Codes/Options: TR/ k per " reel ( mm tape), k/box TAP/ k per ammo pack ( mm tape), k/box Absolute Maximum Ratings T amb = C, unless otherwise specified Parameter Test condition Symbol Value Unit Zener current (see Table "Electrical Characteristics") Power dissipation P tot. ) W ) Valid provided that leads at a distance of mm from case are kept at ambient temperature Thermal Characteristics T amb = C, unless otherwise specified Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air R thja ) K/W Junction temperature T j C Storage temperature T stg - to + C ) Valid provided that leads at a distance of mm from case are kept at ambient temperature

Electrical Characteristics Partnumber Range ) Dynamic Resistance Temperature Coefficient of Reverse Leakage Current Admissible Zener Current ) V Z at I ZT ) rzt at I ZT ) rzk at I ZK α VZ at I Z = I ZT at I R at V R I Z V Ω ma Ω ma %/ C µa V ma min max min max BZX8CV..9 < 8 < -.8 -. < 6 BZX8CV.8. < 8 < -.8 -. < BZX8CV.. < 8 < -.8 -. < BZX8CV6..8 < 6 < -.8 -. < 9 BZX8CV9.. < 6 < -. -. < 8 BZX8CV.6 < < -.. < BZX8CV. < < 6 -.. < BZX8CV.8. < < -.. <. BZX8CV6. 6 < <. < 9 BZX8C6V.8 6.6 < <.. < BZX8C6V8 6.. <. <..6 < BZX8CV.9 < <...6 <. BZX8C8V. 8. < <... < 6. BZX8C9V 8. 9.6 < <... < 6.8 BZX8C 9..6 < <...8 <.. BZX8C..6 < 8 <...8 <. 8. 9 BZX8C.. < 9 <...8 <. 9. 88 BZX8C.. < <...8 <. 9 BZX8C.8.6 < <...9 <. BZX8C6.. < <...9 <. 66 BZX8C8 6.8 9. < <..6.9 <. 6 BZX8C 8.8. < < 6..6.9 <. 6 BZX8C.8. < < 6..6.9 <. 6 BZX8C.8.6 < < 6..6.9 <. 8 BZX8C. 8.9 < 8 <..6.9 <. BZX8C 8 < 8 <..6.9 <. 6 BZX8C < 8 <..6.9 <. BZX8C6 8 < 8 <..6.9 <. BZX8C9 < 6 <..6.9 <. 8 BZX8C 6 < 6 <..6.9 <. 6 BZX8C < 9 <..6.9 <. 6 BZX8C 8 < <..6.9 <. 9 BZX8C6 6 < <..6.9 <. 9 BZX8C6 8 66 < <..6.9 <. 6 BZX8C68 6 < <...9 <. BZX8C 8 < <...9 <. 6 BZX8C8 8 <. <...9 <. 6 BZX8C9 8 96 <. <...9 <. 68 BZX8C 96 6 <. <...9 <. 9. ) Measured with pulses t p = ms ) Valid provided that leads are kept at ambient temperature at a distance of mm from case ) Measured with f = khz

Electrical Characteristics Partnumber Range ) Dynamic Resistance Temperature Coefficient of Reverse Leakage Current Admissible Zener Current ) V Z at I ZT ) rzt at I ZT ) rzk at I ZK α VZ at I Z = I ZT at I R at V R I Z V Ω ma Ω ma %/ C µa V ma min max min max BZX8BV.6.6 < 8 < -.8 -. < 6 BZX8BV.9.6 < 8 < -.8 -. < BZX8BV..6 < 8 < -.8 -. < BZX8BV6..6 < 6 < -.8 -. < 9 BZX8BV9.8.98 < 6 < -. -. < 8 BZX8BV..9 < < -.. < BZX8BV.6.9 < < 6 -.. < BZX8BV. < < -.. <. BZX8BV6.9. < <. < 9 BZX8B6V 6.8 6. < <.. < BZX8B6V8 6.66 6.9 <. <..6 < BZX8BV..6 < <...6 <. BZX8B8V 8. 8.6 < <... < 6. BZX8B9V 8.9 9.8 < <... < 6.8 BZX8B 9.8. < <...8 <.. BZX8B.8. < 8 <...8 <. 8. 9 BZX8B.8. < 9 <...8 <. 9. 88 BZX8B.. < <...8 <. 9 BZX8B.. < <...9 <. BZX8B6. 6. < <...9 <. 66 BZX8B8.6 8. < <..6.9 <. 6 BZX8B 9.6. < < 6..6.9 <. 6 BZX8B.6. < < 6..6.9 <. 6 BZX8B.. < < 6..6.9 <. 8 BZX8B 6.. < 8 <..6.9 <. BZX8B 9..6 < 8 <..6.9 <. 6 BZX8B.. < 8 <..6.9 <. BZX8B6. 6. < 8 <..6.9 <. BZX8B9 8. 9.8 < 6 <..6.9 <. 8 BZX8B..9 < 6 <..6.9 <. 6 BZX8B 6..9 < 9 <..6.9 <. 6 BZX8B < <..6.9 <. 9 BZX8B6.9. < <..6.9 <. 9 BZX8B6 6.8 6. < <..6.9 <. 6 BZX8B68 66.6 69. < <...9 <. BZX8B. 6. < <...9 <. 6 BZX8B8 8. 8.6 <. <...9 <. 6 BZX8B9 89. 9.8 <. <...9 <. 68 BZX8B 98 <. <...9 <. 9. ) Measured with pulses t p = ms ) Valid provided that leads are kept at ambient temperature at a distance of mm from case ) Measured with f = khz

Typical Characteristics T amb = C, unless otherwise specified r tha C/W.... t P t v = P. T P I T. - - - - - s t P 88 Figure. Pulse Thermal Resistance vs. Pulse Duration R tha C/W max. typ. mm lead length 86 Figure. Thermal Resistance vs. Lead Length r zj Ω P tot W 6. ma I Z 89 C T amb 86 Figure. Dynamic Resistance vs. Zener Current Figure. Admissible Power Dissipation vs. Ambient Temperature r zj Ω 6 8 ma r zj Ω V 8 V 6V V ma I Z 86 I Z 86 Figure. Dynamic Resistance vs. Zener Current Figure 6. Dynamic Resistance vs. Zener Current

ma V9 V T j = C I Z 6 V6 6V8 8V 8 6 8 9 V V 86 Z Figure. Breakdown Characteristics ma 6 8 T j = C I Z 9 V V 8 Z Figure 8. Breakdown Characteristics Package Dimensions in millimeters (inches) 9 968

Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to. Meet all present and future national and international statutory requirements.. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (98) and its London Amendments (99) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. Class I and II ozone depleting substances in the Clean Air Act Amendments of 99 by the Environmental Protection Agency (EPA) in the USA. Council Decision 88//EEC and 9/69/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B., D- Heilbronn, Germany 6

Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 8-Jul-8