1 www.irf.com 4/11/8 PD - 97188A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology C Low switching losses Maximum Junction temperature 17 C µs short circuit SOA Square RBSOA G % of the parts tested for 4X rated current (I LM ) Positive V CE (ON) Temperature co-efficient E Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution n-channel Lead Free Package V CES = 6V I C = 12A, T C = C t SC µs, T J(max) = 17 C V CE(on) typ. = 1.V Benefits High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low V CE (ON) and Low Switching losses Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI C G CE TO-2AB G C E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I C @ T C = C Continuous Collector Current 24 I C @ T C = C Continuous Collector Current 12 I CM Pulse Collector Current 48 I LM Clamped Inductive Load Current c 48 A I F @ T C = C Diode Continous Forward Current 24 I F @ T C = C Diode Continous Forward Current 12 I FM Diode Maximum Forward Current e 48 V GE Continuous Gate-to-Emitter Voltage ± V Transient Gate-to-Emitter Voltage ±3 P D @ T C = C Maximum Power Dissipation 14 W P D @ T C = C Maximum Power Dissipation 7 T J Operating Junction and - to +17 T STG Storage Temperature Range C Soldering Temperature, for sec. 3 (.63 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw lbf in (1.1 N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 1.7 C/W R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode) 3.66 R θcs Thermal Resistance, Case-to-Sink (flat, greased surface). R θja Thermal Resistance, Junction-to-Ambient (typical socket mount) 8
Electrical Characteristics @ T J = C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = µa f CT6 V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.3 V/ C V GE = V, I C = 1mA ( C-17 C) CT6 1. 1.8 I C = 12A, V GE = V, T J = C,6,7 V CE(on) Collector-to-Emitter Saturation Voltage 1.9 V I C = 12A, V GE = V, T J = C 9,,11 1.97 I C = 12A, V GE = V, T J = 17 C V GE(th) Gate Threshold Voltage 4. 6. V V CE = V GE, I C = 3µA 9,, V GE(th) / TJ Threshold Voltage temp. coefficient -18 mv/ C V CE = V GE, I C = 1.mA ( C - 17 C) 11, 12 gfe Forward Transconductance 7.7 S V CE = V, I C = 12A, PW = 8µs I CES Collector-to-Emitter Leakage Current 2. µa V GE = V, V CE = 6V 47 V GE = V, V CE = 6V, T J = 17 C V FM Diode Forward Voltage Drop 2. 3. V I F = 12A 8 1.61 I F = 12A, T J = 17 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±V Switching Characteristics @ T J = C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig Q g Total Gate Charge (turn-on) 38 I C = 12A 24 Q ge Gate-to-Emitter Charge (turn-on) 7. 11 nc V GE = V CT1 Q gc Gate-to-Collector Charge (turn-on) 11 16 V CC = 4V E on Turn-On Switching Loss 7 118 I C = 12A, V CC = 4V, V GE = V CT4 E off Turn-Off Switching Loss 2 273 µj R G = 22Ω, L = µh, L S = nh, T J = C E total Total Switching Loss 3 391 Energy losses include tail & diode reverse recovery t d(on) Turn-On delay time 31 4 I C = 12A, V CC = 4V, V GE = V CT4 t r Rise time 17 24 ns R G = 22Ω, L = µh, L S = nh, T J = C t d(off) Turn-Off delay time 83 94 t f Fall time 24 31 E on Turn-On Switching Loss 18 I C = 12A, V CC = 4V, V GE =V 13, E off Turn-Off Switching Loss 3 µj R G =22Ω, L=µH, L S =nh, T J = 17 C f CT4 E total Total Switching Loss 4 Energy losses include tail & diode reverse recovery WF1, WF2 t d(on) Turn-On delay time 3 I C = 12A, V CC = 4V, V GE = V 14, 16 t r Rise time 18 ns R G = 22Ω, L = µh, L S = nh CT4 t d(off) Turn-Off delay time 2 T J = 17 C WF1 t f Fall time 41 WF2 C ies Input Capacitance 76 pf V GE = V 23 C oes Output Capacitance 2 V CC = 3V C res Reverse Transfer Capacitance 23 f = 1.Mhz T J = 17 C, I C = 48A 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 48V, Vp =6V CT2 Rg = 22Ω, V GE = +V to V SCSOA Short Circuit Safe Operating Area µs V CC = 4V, Vp =6V 22, CT3 Rg = 22Ω, V GE = +V to V Erec Reverse Recovery Energy of the Diode 28 µj T J = 17 C 17, 18, 19 t rr Diode Reverse Recovery Time 68 ns V CC = 4V, I F = 12A, 21 I rr Peak Reverse Recovery Current 19 A V GE = V, Rg = 22Ω, L =µh, L s = nh WF3 WF4 Notes: V CC = 8% (V CES ), V GE = V, L = µh, R G = 22Ω. This is only applied to TO-2AB package. ƒ Pulse width limited by max. junction temperature. Refer to AN-86 for guidelines for measuring V (BR)CES safely. 2 www.irf.com
I CE (A) I CE (A) I C (A) I C (A) I C (A) P tot (W) 1 7 4 6 8 1 14 16 18 4 6 8 1 14 16 18 T C ( C) T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature µsec 1.1 Tc = C Tj = 17 C Single Pulse µsec 1msec DC 1 1 Fig. 3 - Forward SOA T C = C, T J 17 C; V GE =V Fig. 4 - Reverse Bias SOA T J = 17 C; V GE =V 4 4 4 4 3 3 V GE = 18V VGE = V VGE = 12V VGE = V VGE = 8.V 3 3 V GE = 18V VGE = V VGE = 12V VGE = V VGE = 8.V 1 2 3 4 6 7 8 1 2 3 4 6 7 8 Fig. - Typ. IGBT Output Characteristics T J = -4 C; tp = 8µs Fig. 6 - Typ. IGBT Output Characteristics T J = C; tp = 8µs www.irf.com 3
I CE (A) I CE (A) I F (A) 4 8 4 3 3 V GE = 18V VGE = V VGE = 12V VGE = V VGE = 8.V 7 6 4 3-4 c C 17 C 1 2 3 4 6 7 8 Fig. 7 - Typ. IGBT Output Characteristics T J = 17 C; tp = 8µs 18 16 14. 1. 2. 3. 4. V F (V) Fig. 8 - Typ. Diode Forward Characteristics tp = 8µs 18 16 14 12 8 I CE = 6.A I CE = 12A I CE = 24A 12 8 I CE = 6.A I CE = 12A I CE = 24A 6 6 4 4 2 2 V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = -4 C Fig. - Typical V CE vs. V GE T J = C 18 16 4 T J = C T J = 17 C 14 12 8 I CE = 6.A I CE = 12A I CE = 24A 3 6 4 2 V GE (V) V GE (V) Fig. 11 - Typical V CE vs. V GE T J = 17 C Fig. 12 - Typ. Transfer Characteristics V CE = V; tp = µs 4 www.irf.com
I RR (A) I RR (A) Energy (µj) Swiching Time (ns) Energy (µj) Swiching Time (ns) 8 7 6 td OFF E OFF t F 4 3 E ON td ON t R 3 1 I C (A) I C (A) Fig. 13 - Typ. Energy Loss vs. I C T J = 17 C; L = µh; V CE = 4V, R G = 22Ω; V GE = V Fig. 14 - Typ. Switching Time vs. I C T J = 17 C; L = µh; V CE = 4V, R G = 22Ω; V GE = V 4 4 E OFF 3 3 E ON td OFF t F 7 1 Rg (Ω) Fig. - Typ. Energy Loss vs. R G T J = 17 C; L = µh; V CE = 4V, I CE = 12A; V GE = V td ON t R 7 1 R G (Ω) Fig. 16 - Typ. Switching Time vs. R G T J = 17 C; L = µh; V CE = 4V, I CE = 12A; V GE = V R G = Ω R G = 22Ω R G = 47Ω R G = Ω 3 7 1 I F (A) R G (Ω) Fig. 17 - Typ. Diode I RR vs. I F T J = 17 C Fig. 18 - Typ. Diode I RR vs. R G T J = 17 C www.irf.com
Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) Energy (µj) Time (µs) I RR (A) Q RR (µc) 14 8 47Ω 24A 22Ω Ω 6 4 Ω 12A 6.A di F /dt (A/µs) Fig. 19 - Typ. Diode I RR vs. di F /dt V CC = 4V; V GE = V; I F = 12A; T J = 17 C di F /dt (A/µs) Fig. - Typ. Diode Q RR vs. di F /dt V CC = 4V; V GE = V; T J = 17 C 4 3 3 R G = Ω R G = 22Ω R G = 47Ω R G = Ω 18 16 14 12 8 6 4 2 1 1 9 8 7 6 4 3 Current (A) 3 8 12 14 16 18 I F (A) V GE (V) Fig. 21 - Typ. Diode E RR vs. I F T J = 17 C Fig. 22 - V GE vs. Short Circuit Time V CC = 4V; T C = C 16 Cies 14 12 V CES = 3V V CES = 4V 8 Coes 6 4 Cres 2 4 6 8 3 Q G, Total Gate Charge (nc) Fig. 23 - Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig. 24 - Typical Gate Charge vs. V GE I CE = 12A; L = 6µH 6 www.irf.com
1 D =. Thermal Response ( Z thjc ).1....2 τ 1 τ 2 τ 3 τ 3.424.1361.1.1 Ci= τi/ri SINGLE PULSE Ci i/ri.287.947 ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-.1.1.1.1 1 t 1, Rectangular Pulse Duration (sec) τ J τ J R 1 R 2 R 3 R 1 R 2 R 3 τ 1 τ 2 τ C τ Ri ( C/W) τi (sec).38.171 Fig. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thjc ) 1.1 D =.....2.1 R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ri ( C/W) τi (sec).8294.233 1.913817.1894.1 SINGLE PULSE Ci= τi/ri.926641.14711 Ci i/ri ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-.1.1.1.1 1 t 1, Rectangular Pulse Duration (sec) τ C τ Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7
L 1K L VC C 8 V Rg 48V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / L 4x DC 36V - V Rg / DRIVER VCC Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit R = VCC ICM C force 4µH D1 K C sense Rg VCC G force.7µ E sense E force Fig.C.T. - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit 8 www.irf.com
4 4 4 tr 3 tf 3 3 VCE (V) 9% I CE VCE (V) 9% test TEST % I CE % test % V CE % V CE E OFF Loss - - -... 1. 1. 2. Time(µs) E ON - - 11.7 11.8 11.9 12. 12. Time (µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T J = 17 C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ T J = 17 C using Fig. CT.4 Q RR 4 t RR 3 V CE IRR(A) - - Peak I RR % Peak I RR VCE (V) I CE ICE (A) - - - -... time (µs) Fig. WF3 - Typ. Diode Recovery Waveform @ T J = 17 C using Fig. CT.4 - -.... time (µs) Fig. WF4 - Typ. S.C. Waveform @ T J = C using Fig. CT.3 - www.irf.com 9
TO-2AB Package Outline Dimensions are shown in millimeters (inches) TO-2AB Part Marking Information (;$3/( 7+,6,6$1,) /27&2'( $66(%/('21::,17+($66(%/</,1(&,17(1$7,21$/ (&7,),( /2*2 3$718%( '$7(&2'( 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH $66(%/< /27&2'( <($ :((. /,1(& TO-2AB package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 924, USA Tel: (3) 2-7 TAC Fax: (3) 2-793 Visit us at www.irf.com for sales contact information. 4/8 www.irf.com