PD - 97397A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses 5 µs short circuit SOA Square RBSOA % of the parts tested for I LM G Positive V CE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C E n-channel V CES = V I C =.A, T C = C t SC 5µs, T J(max) = 5 C V CE(on) typ. =.5V Benefits High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low V CE (ON) and Low Switching losses Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI C TO-2 Full-Pak G CE G C E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage V I C @ T C = 25 C Continuous Collector Current 5 I C @ T C = C Continuous Collector Current. I CM Pulse Collector Current, V GE = 5V 2 I LM Clamped Inductive Load Current, V GE = V c 32 A I F @ T C = 25 C Diode Continous Forward Current 5 I F @ T C = C Diode Continous Forward Current. I FM Diode Maximum Forward Current d 32 V GE Continuous Gate-to-Emitter Voltage ± V Transient Gate-to-Emitter Voltage ± P D @ T C = 25 C Maximum Power Dissipation 3 W P D @ T C = C Maximum Power Dissipation 5 T J Operating Junction and -55 to +5 T STG Storage Temperature Range C Soldering Temperature, for sec. (.3 in. (.mm) from case) Mounting Torque, -32 or M3 Screw lbf in (. N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 3.29 C/W R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode). R θcs Thermal Resistance, Case-to-Sink (flat, greased surface).5 R θja Thermal Resistance, Junction-to-Ambient (typical socket mount) 5 www.irf.com //9
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V (BR)CES Collector-to-Emitter Breakdown Voltage V V GE = V, I C = µa e CT V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.52 V/ C V GE = V, I C = µa (-55 C-5 C) CT.5. I C =.A, V GE = 5V, T J = 25 C 5,,7 V CE(on) Collector-to-Emitter Saturation Voltage.73 V I C =.A, V GE = 5V, T J = 5 C 9,,. I C =.A, V GE = 5V, T J = 5 C V GE(th) Gate Threshold Voltage..5 V V CE = V GE, I C = 275µA 9,, V GE(th) / TJ Threshold Voltage temp. coefficient - mv/ C V CE = V GE, I C =.ma (-55 C - 5 C), gfe Forward Transconductance.5 S V CE = 5V, I C =.A, PW = µs I CES Collector-to-Emitter Leakage Current µa V GE = V, V CE = V 25 V GE = V, V CE = V, T J = 5 C V FM Diode Forward Voltage Drop 2.23 3. V I F =.A. I F =.A, T J = 5 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig Q g Total Gate Charge (turn-on) 2 32 I C =.A 2 Q ge Gate-to-Emitter Charge (turn-on). 7.2 nc V GE = 5V CT Q gc Gate-to-Collector Charge (turn-on). 3 V CC = V E on Turn-On Switching Loss 25 I C =.A, V CC = V, V GE = 5V CT E off Turn-Off Switching Loss 5 37 µj R G = 22Ω, L =.mh, T J = 25 C E total Total Switching Loss 5 2 Energy losses include tail & diode reverse recovery t d(on) Turn-On delay time 29 3 I C =.A, V CC = V, V GE = 5V CT t r Rise time 7 ns R G = 22Ω, L =.mh, T J = 25 C t d(off) Turn-Off delay time 9 t f Fall time 23 E on Turn-On Switching Loss 5 I C =.A, V CC = V, V GE =5V 3, 5 E off Turn-Off Switching Loss 5 µj R G =22Ω, L=.mH, T J = 5 C e CT E total Total Switching Loss 25 Energy losses include tail & diode reverse recovery WF, WF2 t d(on) Turn-On delay time 2 I C =.A, V CC = V, V GE = 5V, t r Rise time ns R G = 22Ω, L =.mh CT t d(off) Turn-Off delay time T J = 5 C WF t f Fall time 27 WF2 C ies Input Capacitance pf V GE = V 23 C oes Output Capacitance 5 V CC = V C res Reverse Transfer Capacitance f =.Mhz T J = 5 C, I C = 32A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = V, Vp =V CT2 Rg = 9Ω, V GE = +V to V SCSOA Short Circuit Safe Operating Area 5 µs V CC = V, Vp =V 22, CT3 Rg = 9Ω, V GE = +5V to V Erec Reverse Recovery Energy of the Diode 7 µj T J = 5 C 7,, 9 t rr Diode Reverse Recovery Time ns V CC = V, I F =.A, 2 I rr Peak Reverse Recovery Current A V GE = 5V, Rg = 22Ω, L =.mh WF3 WF Notes: V CC = % (V CES ), V GE = V, L = 2µH, R G = 9Ω. Pulse width limited by max. junction temperature. ƒ Refer to AN- for guidelines for measuring V (BR)CES safely. 2 www.irf.com
I CE (A) I CE (A) I C (A) I C (A) I C (A) P tot (W) 2 T C ( C) T C ( C) Fig. - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature µsec µsec msec DC. Tc = 25 C Tj = 5 C Single Pulse Fig. 3 - Forward SOA T C = 25 C, T J 5 C; V GE =5V Fig. - Reverse Bias SOA T J = 5 C; V GE = V 7 V GE = V 5 V GE = V 5 VGE = 5V VGE = V VGE = V VGE =.V VGE = 5V VGE = V VGE = V VGE =.V 2 3 5 7 9 2 3 5 7 9 Fig. 5 - Typ. IGBT Output Characteristics T J = - C; tp = µs Fig. - Typ. IGBT Output Characteristics T J = 25 C; tp = µs www.irf.com 3
I CE (A) I CE (A) I F (A) 7 5 V GE = V VGE = 5V VGE = V VGE = V VGE =.V 5 - c 25 C 5 C 2 3 5 7 9 Fig. 7 - Typ. IGBT Output Characteristics T J = 5 C; tp = µs.. 2. 3.. 5. V F (V) Fig. - Typ. Diode Forward Characteristics tp = µs I CE = 3.7A I CE =.A I CE = 5A I CE = 3.7A I CE =.A I CE = 5A 2 2 5 5 5 5 V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = - C Fig. - Typical V CE vs. V GE T J = 25 C 5 I CE = 3.7A I CE =.A I CE = 5A T J = - C T J = 25 C T J = 5 C 2 5 5 2 V GE (V) V GE (V) Fig. - Typical V CE vs. V GE T J = 5 C Fig. - Typ. Transfer Characteristics V CE = 5V; tp = µs www.irf.com
I RR (A) I RR (A) Energy (µj) Swiching Time (ns) Energy (µj) Swiching Time (ns) 35 E OFF 25 td OFF t F 5 E ON td ON t R 5 2 2 I C (A) I C (A) Fig. 3 - Typ. Energy Loss vs. I C T J = 5 C; L =.mh; V CE = V, R G = 22Ω; V GE = 5V Fig. - Typ. Switching Time vs. I C T J = 5 C; L =.mh; V CE = V, R G = 22Ω; V GE = 5V 25 E OFF 5 td OFF 5 E ON td ON t F Rg (Ω) Fig. 5 - Typ. Energy Loss vs. R G T J = 5 C; L =.mh; V CE = V, I CE =.A; V GE = 5V R G = Ω R G = 22Ω R G = 7Ω t R R G (Ω) Fig. - Typ. Switching Time vs. R G T J = 5 C; L =.mh; V CE = V, I CE =.A; V GE = 5V R G = Ω 2 25 5 75 I F (A) R G (Ω) Fig. 7 - Typ. Diode I RR vs. I F T J = 5 C Fig. - Typ. Diode I RR vs. R G T J = 5 C www.irf.com 5
Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) Energy (µj) Time (µs) I RR (A) Q RR (µc) 5 5A 22Ω Ω Ω 7Ω 7.A 3.A di F /dt (A/µs) Fig. 9 - Typ. Diode I RR vs. di F /dt V CC = V; V GE = 5V; I F =.A; T J = 5 C di F /dt (A/µs) Fig. - Typ. Diode Q RR vs. di F /dt V CC = V; V GE = 5V; T J = 5 C 25 R G = Ω R G = 22Ω T sc I sc 5 R G = 7Ω Current (A) 5 R G = Ω 2 I F (A) V GE (V) Fig. 2 - Typ. Diode E RR vs. I F T J = 5 C Cies Fig. 22 - V GE vs. Short Circuit Time V CC = V; T C = 25 C V CES = V V CES = V Coes Cres 2 5 5 25 35 2 22 Q G, Total Gate Charge (nc) Fig. 23 - Typ. Capacitance vs. V CE V GE = V; f = MHz Fig. 2 - Typical Gate Charge vs. V GE I CE =.A; L = 9µH www.irf.com
Thermal Response ( Z thjc ).. D =.5...5.2. SINGLE PULSE ( THERMAL RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E- E-5.... t, Rectangular Pulse Duration (sec) R R τ τ τ C τ Ri ( C/W) τi (sec).3..552.7.39.329.37.95 Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thjc ).. D =.5...5.2. SINGLE PULSE ( THERMAL RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E- E-5.... t, Rectangular Pulse Duration (sec) R R τ τ τ C τ Ri ( C/W) τi (sec).72.9.975.7.79.2.9.57 Fig. 2. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7
L K L VC C V Rg V Fig.C.T. - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / L x DC V 3V - 5V Rg / DRIVER VCC Fig.C.T.3 - S.C. SOA Circuit Fig.C.T. - Switching Loss Circuit R = VCC ICM C force K Rg VCC G force D 22K.75µ C sense E sense E force Fig.C.T.5 - Resistive Load Circuit Fig.C.T. - BVCES Filter Circuit www.irf.com
5 25 5 25 tf tr TEST CURRENT 5 9% test current 5 VCE (V) 9% I CE ICE (A) VCE (V) % test current ICE (A) 5% 5 5 V CE 5% I CE 5% V CE - Eoff Loss -.2.2... time(µs) Fig. WF - Typ. Turn-off Loss Waveform @ T J = 5 C using Fig. CT. -5 - -.. time (µs) Eon Loss Fig. WF2 - Typ. Turn-on Loss Waveform @ T J = 5 C using Fig. CT. -5 Q RR 5 5 ICE - t RR VCE VF (V) - - % Peak IRR 5 IF (A) Vce (V) Ice (A) - -5 Peak I RR -5 - - -.5..5..5 time (µs) Fig. WF3 - Typ. Diode Recovery Waveform @ T J = 5 C using Fig. CT. -5-5 5 Time (us) Fig. WF - Typ. S.C. Waveform @ T J = 25 C using Fig. CT.3 - www.irf.com 9
TO-2 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-2 Full-Pak Part Marking Information (;$3/( 7+,,$,5),* :,7+$(%/< /27&2'( $(%/('2::,7+($(%/</,(.,7(5$7,2$/ 5(&7,),(5 /2*2,5),*. 3$57%(5 '$7(&2'( RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH $(%/< /27&2'( <($5 :((. /,(. TO-2 Full-Pak package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 925, USA Tel: (3) 252-75 TAC Fax: (3) 252-793 Visit us at www.irf.com for sales contact information. /9 www.irf.com