IRGP3PbF IRGP3-EPbF Insulated Gate Bipolar Transistor V CES = 5V I C = 5A, T C =1 C C G G t SC 5.5µs, T J(max) = 175 C V CE(ON) typ. = 1.7V @ IC = A Applications Industrial Motor Drive Inverters UPS Welding Features Low V CE(ON) and switching losses Square RBSOA and maximum junction temperature 175 C Positive V CE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant G E n-channel G C E IRGP3PbF G C E Gate Collector Emitter Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly E C G IRGP3 EPbF Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG7P3PbF TO-7AC Tube 5 IRGP3PbF IRG7P3-EPbF TO-7AD Tube 5 IRGP3-EPbF Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 5 V I C @ T C = 5 C Continuous Collector Current 9 I C @ T C = 1 C Continuous Collector Current I CM Pulse Collector Current, V GE =V 19 I LM Clamped Inductive Load Current, V GE =V 19 V GE Continuous Gate-to-Emitter Voltage ± V P D @ T C = 5 C Maximum Power Dissipation 3 P D @ T C = 1 C Maximum Power Dissipation 15 T J Operating Junction and - to +175 T STG Storage Temperature Range Soldering Temperature, for 1 sec. Mounting Torque, -3 or M3 Screw 3 (.3 in. (1.mm) from case) 1 lbf in (1.1 N m) A W C Thermal Resistance Parameter Min. Typ. Max. Units R JC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT).5 R CS Thermal Resistance, Case-to-Sink (flat, greased surface). C/W R JA Thermal Resistance, Junction-to-Ambient (typical socket mount) 1 www.irf.com 1 International Rectifier November, 1
IRGP3PbF/IRGP3-EPbF Electrical Characteristics @ T J = 5 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 5 V V GE = V, I C = 1µA V (BR)CES / Temperature Coeff. of Breakdown Voltage 55 mv/ C V GE = V, I C = 1mA (5 C-175 C) V CE(on) Collector-to-Emitter Saturation Voltage 1.7.1 V I C = A, V GE = 15V, T J = 5 C.1 I C = A, V GE = 15V, T J = 175 C V GE(th) Gate Threshold Voltage 5.5 7.7 V V CE = V GE, I C = 1.mA V GE(th) / T J Threshold Voltage Temperature Coeff. -3 mv/ C V CE = V GE, I C = 1.mA (5 C-175 C) gfe Forward Transconductance 31 S V CE = 5V, I C = A, PW = µs I CES Collector-to-Emitter Leakage Current 1. 5 µa V GE = V, V CE = 5V 7 V GE = V, V CE = 5V, T J = 175 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±V Switching Characteristics @ T J = 5 C (unless otherwise specified) Parameter Min. Typ. Max Units Conditions Q g Total Gate Charge (turn-on) 1 15 I C = A Q ge Gate-to-Emitter Charge (turn-on) 3 5 nc V GE = 15V Q gc Gate-to-Collector Charge (turn-on) V CC = V E on Turn-On Switching Loss 1.7. E off Turn-Off Switching Loss 1. 1.9 mj E I C = A, V CC = V, V GE =15V total Total Switching Loss.7.5 t R G = 1, L = 1µH, T J = 5 C d(on) Turn-On delay time 7 9 t Energy losses include tail & diode r Rise time ns reverse recovery t d(off) Turn-Off delay time 1 1 t f Fall time 3 5 E on Turn-On Switching Loss.9 E off Turn-Off Switching Loss 1. mj I C = A, V CC = V, V GE =15V E total Total Switching Loss.3 R G = 1, L = 1µH, T J = 175 C t d(on) Turn-On delay time 55 Energy losses include tail & diode t r Rise time ns reverse recovery t d(off) Turn-Off delay time 15 t f Fall time 5 C ies Input Capacitance 3 V GE = V C oes Output Capacitance 15 pf V CC = 3V C res Reverse Transfer Capacitance f = 1.Mhz T J = 175 C, I C = 19A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 5V, Vp 5V Rg = 1, V GE = +V to V SCSOA Short Circuit Safe Operating Area 5.5 µs T J = 15 C,V CC = V, Vp 5V Rg = 1, V GE = +15V to V Notes: V CC = % (V CES ), V GE = V, L = 5µH, R G = 1. R is measured at T J of approximately 9 C. Refer to AN-1 for guidelines for measuring V (BR)CES safely. Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. www.irf.com 1 International Rectifier November, 1
I C, Collector-to -Emitter Current (A) I C (A) I C (A) P tot (W) IRGP3PbF/IRGP3-EPbF Load Current ( A ) 11 9 7 For both: Duty cycle : 5% Tj = 175 C Tcase = 1 C Gate drive as specified Power Dissipation = 15W 5 Square Wave: V CC I 3 Diode as specified 1.1 1 1 1 f, Frequency ( khz ) 1 Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 35 75 3 5 5 15 5 1 5 5 5 75 1 15 15 175 T C ( C) 5 5 75 1 15 15 175 T C ( C) Fig. - Maximum DC Collector Current vs. Case Temperature Fig. 3 - Power Dissipation vs. Case Temperature 1 OPERATION IN THIS AREA LIMITED BY V CE (on) 1 1 1 1msec 1µsec 1 1 1msec 1.1.1 Tc = 5 C Tj = 175 C Single Pulse DC 1 1 1 1 V CE, Collector-to-Emitter Voltage (V) Fig. - Forward SOA T C = 5 C, TJ 175 C, V GE =15V 1 1 1 1 Fig. 5- Reverse Bias SOA T J = 175 C; V GE = V 3 www.irf.com 1 International Rectifier November, 1
I CE (A) I CE (A) I CE (A) IRGP3PbF/IRGP3-EPbF 1 1 1 1 VGE = 1V VGE = 15V VGE = 1V VGE = 1V VGE =.V 1 1 1 1 VGE = 1V VGE = 15V VGE = 1V VGE = 1V VGE =.V 1 1 1 3 5 7 9 1 1 Fig. - Typ. IGBT Output Characteristics T J = - C; tp = µs Fig. 7 - Typ. IGBT Output Characteristics T J = 5 C; tp = µs 1 1 1 VGE = 1V VGE = 15V VGE = 1V VGE = 1V VGE =.V 1 1 I CE = A I CE = A I CE = 9A 1 3 5 7 9 1 1 1 1 1 1 V GE (V) Fig. - Typ. IGBT Output Characteristics T J = 175 C; tp = µs Fig. 9 - Typical V CE vs. V GE T J = - C I CE = A I CE = A I CE = 9A I CE = A I CE = A I CE = 9A 1 1 1 1 1 V GE (V) 1 1 1 1 1 V GE (V) Fig. 1 - Typical V CE vs. V GE T J = 5 C Fig. 11 - Typical V CE vs. V GE T J = 175 C www.irf.com 1 International Rectifier November, 1
Swiching Time (ns) Time (µs) Swiching Time (ns) Energy (mj) I C, Collector-to-Emitter Current (A) Energy (mj) IRGP3PbF/IRGP3-EPbF 1 1 1 1 1 T J = 5 C T J = 175 C 1 1 1 1 1 V GE, Gate-to-Emitter Voltage (V) Fig. 1 - Typ. Transfer Characteristics V CE = 5V; tp = µs 1 1 9 7 5 3 1 1 3 5 7 9 111 I C (A) E ON E OFF Fig. 13 - Typ. Energy Loss vs. I C T J = 175 C; L =.1mH; V CE = V, R G = 1 ; V GE = 15V 7 E ON td OFF 5 1 t F td ON t R 3 1 E OFF 1 Fig. 1 - Typ. Switching Time vs. I C T J = 175 C; L =.1mH; V CE = V, R G = 1 ; V GE = 15V 1 1 3 5 7 9 1 I C (A) 1 1 R G ( ) Fig. 15 - Typ. Energy Loss vs. RG T J = 175 C; L =.1mH; V CE = V, I CE = A; VGE = 15V 35 1 3 T sc 1 1 t F td OFF t R td ON 5 15 I sc 1 1 Current (A) 1 1 1 R G ( ) 5 1 1 1 1 1 V GE (V) Fig. 1 - Typ. Switching Time vs. RG T J = 175 C; L =.1mH; V CE = V, I CE = A; V GE = 15V Fig. 17 - V CE vs. Short Circuit Time V cc = V; T C = 15 C 5 www.irf.com 1 International Rectifier November, 1
Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) IRGP3PbF/IRGP3-EPbF 1 1 Cies 1 1 V CES = V V CES = 3V 1 1 1 Coes Cres 1 1 3 5 1 Q G, Total Gate Charge (nc) Fig. 1 - Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig. 19 - Typical Gate Charge vs. V GE I CE = A R 1 R R 3 R 1 R R 3 J J 1 1 3 3 Ci= i Ri Ci= i Ri R R.39.1 Ri ( C/W) i (sec) C C..1.91.5.15.51 Fig. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) www.irf.com 1 International Rectifier November, 1
IRGP3PbF/IRGP3-EPbF Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T. - RBSOA Circuit Fig.C.T.3 - Switching Loss Circuit Fig.C.T. - Switching Loss Circuit C force 1K D1 K C sense G force DUT.75µF E sense E force BVCES Filter Fig.C.T.5 - Resistive Load Circuit Fig.C.T. - BVCES Filter Circuit 7 www.irf.com 1 International Rectifier November, 1
IRGP3PbF/IRGP3-EPbF 5 tf 9% I CE 5 7 5 9% I CE tr TEST CURRENT 7 5 3 3 I CE (A) 3 3 I CE (A) 1 5% V CE 5% ICE 1-1 Eoff Loss - -1 1% I CE 5% V 1 CE Eon Loss -1-3 - -1 1 3 5 7 1-1 time(µs) time (µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175 C using Fig. CT. Fig. WF - Typ. Turn-on Loss Waveform @ TJ = 175 C using Fig. CT. 5 5 VCE 3 3 Vce (V) 1 ICE 1 Ice (A) -1 - -1 Time (us) Fig. WF3 - Typ. S.C. Waveform @ TJ = 15 C using Fig. CT.3 www.irf.com 1 International Rectifier November, 1
IRGP3PbF/IRGP3-EPbF TO-7AC Package Outline Dimensions are shown in millimeters (inches) E/ E A A A "A" Q E X D B L1 "A" L SEE VIEW "B" x b b e 3x b Ø.1 x LEAD TIP B A c A1 Ø P Ø.1 B A -A- S D1 THERMAL PAD VIEW: "B" PLATING BASE METAL Ø.1 E1 B A (c) VIEW: "A" - "A" (b, b, b) SECTION: C-C, D-D, E-E TO-7AC Part Marking Information Notes: This part marking information applies to devices produced after //1 EXAMPLE: THIS IS AN IRFPE3 WITH ASSEMBLY LOT CODE 557 ASSEMBLED ON WW 35, 1 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPE3 135H 5 57 PART NUMBER DATE CODE YEAR 1 = 1 WEEK 35 LINE H TO-7AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com 1 International Rectifier November, 1
IRGP3PbF/IRGP3-EPbF TO-7AD Package Outline Dimensions are shown in millimeters (inches) TO-7AD Part Marking Information EXAM PLE: THIS IS AN IRGP3B1KD-E WITH ASSEM BLY LOT CODE 557 ASSEM BLED ON WW 35, IN THE ASSEM BLY LINE "H" Note: "P" in assem bly line position indicates "Lead-Free" PART NUM BER IN TE R N A TIO N A L RECTIFIER LO GO 35H 5 57 DATE CODE ASSEM BLY YEAR = LO T CO DE WEEK 35 LINE H TO-7AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 1 www.irf.com 1 International Rectifier November, 1
IRGP3PbF/IRGP3-EPbF Qualification Information Qualification Level Moisture Sensitivity Level RoHS Compliant TO-7AC TO-7AD Industrial (per JEDEC JESD7F) Yes N/A Qualification standards can be found at International Rectifier s web site: http://www.irf.com/product-info/reliability/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 11N Sepulveda., El Segundo, California 95, USA Tel: (31) 5-715 TAC Fax: (31) 5-793 Visit us at www.irf.com for sales contact information. 11 www.irf.com 1 International Rectifier November, 1