3V NChannel AlphaMOS General escription Latest Trench Power AlphaMOS (αmos LV) technology Very Low RS(on) at 4.5V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V S I (at V GS =V) R S(ON) (at V GS =V) R S(ON) (at V GS = 4.5V) 3V 7A <.4mΩ < 3.mΩ Application C/C Converters in Computing, Servers, and POL Isolated C/C Converters in Telecom and Industrial % UIS Tested % R g Tested TopView TO5 PAK Bottom View Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter Symbol Maximum Units rainsource Voltage 3 V GateSource Voltage V S Spike G S Continuous rain T C =5 C Current G T C = C Pulsed rain Current C S V S G V GS I M I AS E AS V SPIKE Junction and Storage Temperature Range T J, T STG 55 to 75 C ± I 7 Continuous rain T A =5 C 7 I SM Current T A =7 C Avalanche Current C Avalanche energy L=.mH C Power issipation B ns 36 V T C =5 C T C = C P T A =5 C.5 Power issipation A P SM W T A =7 C.6 55 8 55 5 83 33 G S V A A A mj W Thermal Characteristics Parameter Symbol Typ Maximum JunctiontoAmbient A t s 6 R θja Maximum JunctiontoAmbient A SteadyState 4 Maximum JunctiontoCase SteadyState.8 R θjc Max 5.5 Units C/W C/W C/W Rev : Nov www.aosmd.com Page of 6
Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV SS rainsource Breakdown Voltage I =5µA, V GS =V 3 V V S =3V, V GS =V I SS Zero Gate Voltage rain Current µa T J =55 C 5 I GSS GateBody leakage current V S =V, V GS = ±V na V GS(th) Gate Threshold Voltage V S =V GS, I =5µA.5 V R S(ON) Static rainsource OnResistance V GS =V, I =A V GS =4.5V, I =A.4 T J =5 C.5 3.5 3. mω g FS Forward Transconductance V S =5V, I =A 85 S V S iode Forward Voltage I S =A,V GS =V.7 V I S Maximum Bodyiode Continuous Current G 7 A YNAMIC PARAMETERS C iss Input Capacitance 343 pf C oss Output Capacitance V GS =V, V S =5V, f=mhz 37 pf C rss Reverse Transfer Capacitance 75 pf R g Gate resistance V GS =V, V S =V, f=mhz.3.7. Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge 53 64 nc Q g (4.5V) Total Gate Charge 5 3 nc V GS =V, V S =5V, I =A Q gs Gate Source Charge 7.8 nc Q gd Gate rain Charge.3 nc t (on) TurnOn elaytime 7.5 ns t r TurnOn Rise Time V GS =V, V S =5V, R L =.75Ω, 5. ns t (off) TurnOff elaytime R GEN =3ΩΩ 33.8 ns t f TurnOff Fall Time 9.8 ns t rr Body iode Reverse Recovery Time I F =A, di/dt=5a/µs ns Q rr Body iode Reverse Recovery Charge I F =A, di/dt=5a/µs 58 nc A. The value of R θja is measured with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A =5 C. The Power dissipation P SM is based on R θja and the maximum allowed junction temperature of 5 C. The value in any given application depends on the user's specific board design, and the maximum temperature of 75 C may be used if the PCB allows it. B. The power dissipation P is based on T J(MAX) =75 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX) =75 C.. The R θja is the sum of the thermal impedance from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3µs pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =75 C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A =5 C. mω THIS PROUCT HAS BEEN ESIGNE AN QUALIFIE FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS ARE NOT AUTHORIZE. AOS OES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PROUCTS. AOS RESERVES THE RIGHT TO IMPROVE PROUCT ESIGN, FUNCTIONS AN RELIABILITY WITHOUT NOTICE. Rev : Nov www.aosmd.com Page of 6
TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS 8 V 8 V S =5V I (A) 6 4 4.5V 3V I (A) 6 4 5 C V GS =.5V 5 C 3 4 5 V S (Volts) Fig : OnRegion Characteristics (Note E) 3 4 5 6 V GS (Volts) Figure : Transfer Characteristics (Note E) 5.6 R S(ON) (mω) 4 3 V GS =4.5V V GS =V Normalized OnResistance.4. V GS =V I =A 7 5 V GS =4.5V I =A 5 5 5 3 I (A) Figure 3: OnResistance vs. rain Current and Gate Voltage (Note E).8 5 5 75 5 5 75 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature (Note E) R S(ON) (mω) 5 4 3 5 C I =A 5 C I S (A).E.E.E.E.E.E3 5 C 5 C.E4 4 6 8 V GS (Volts) Figure 5: OnResistance vs. GateSource Voltage (Note E).E5...4.6.8.. V S (Volts) Figure 6: Bodyiode Characteristics (Note E) Rev : Nov www.aosmd.com Page 3 of 6
TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS 5 V GS (Volts) 8 6 4 V S =5V I =A Capacitance (pf) 45 4 35 3 5 5 C oss C iss 5 3 4 5 6 Q g (nc) Figure 7: GateCharge Characteristics C rss 5 5 5 3 V S (Volts) Figure 8: Capacitance Characteristics I (Amps)...... R S(ON) T J(Max) =5 C T C =5 C C µs.. V S (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) µs µs ms ms ms Power (W) 4 35 3 5 5 5 T J(Max) =5 C T C =5 C.... Figure : Single Pulse Power Rating JunctiontoCase (Note F) Z θjc Normalized Transient Thermal Resistance.. =T on /T T J,PK =T C P M.Z θjc.r θjc R θjc =.5 C/W Single Pulse In descending order =.5,.3,.,.5,.,., single pulse E5.... Figure : Normalized Maximum Transient Thermal Impedance (Note F) P T on T Rev : Nov www.aosmd.com Page 4 of 6
TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS 8 Power issipation (W) 9 8 7 6 5 4 3 Current rating I (A) 7 6 5 4 3 5 5 75 5 5 T CASE ( C) Figure : Power erating (Note F) 5 5 75 5 5 T CASE ( C) Figure 3: Current erating (Note F) T A =5 C Power (W) E5.. Figure 4: Single Pulse Power Rating Junctionto Ambient (Note H) Z θja Normalized Transient Thermal Resistance... =T on /T T J,PK =T A P M.Z θja.r θja R θja =5 C/W Single Pulse In descending order =.5,.3,.,.5,.,., single pulse... Figure 5: Normalized Maximum Transient Thermal Impedance (Note H) P T on T Rev : Nov www.aosmd.com Page 5 of 6
Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig RL Resistive Switching Test Circuit & Waveforms Charge Rg 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = / LI AR AR BV SS Id Rg Id I AR iode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev : Nov www.aosmd.com Page 6 of 6