INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 µs short circuit SOA Square RBSOA G 1% of the parts tested for X rated current (I LM ) Positive V CE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package Benefits High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low V CE (ON) and Low Switching losses Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI Absolute Maximum Ratings C E n-channel C IRGS62DPbF IRGSL62DPbF G E D 2 Pak IRGS62DPbF V CES = 6V I C = 2A, T C = 1 C t SC 5µs, T J(max) = 175 C V CE(on) typ. = 1.65V E C G G C E Gate Collector Emitter C TO-262 IRGSL62DPbF PD - 97355B Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I C @ T C = C Continuous Collector Current 8 I C @ T C = 1 C Continuous Collector Current 2 I CM Pulse Collector Current 96 I LM Clamped Inductive Load Current c 96 A I F @ T C = C Diode Continous Forward Current 8 I F @ T C = 1 C Diode Continous Forward Current 2 I FM Diode Maximum Forward Current d 96 V GE Continuous Gate-to-Emitter Voltage ±2 V Transient Gate-to-Emitter Voltage ±3 P D @ T C = C Maximum Power Dissipation W P D @ T C = 1 C Maximum Power Dissipation 1 T J Operating Junction and -55 to +175 T STG Storage Temperature Range C Soldering Temperature, for 1 sec. 3 (.63 in. (1.6mm) from case) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT).6 R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode) 1.53 C/W R θcs Thermal Resistance, Case-to-Sink (flat, greased surface).5 R θja Thermal Resistance, Junction-to-Ambient (typical socket mount) 8 1 www.irf.com 12/7/9
IRGS/SL62DPbF Electrical Characteristics @ T J = C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 1µA e CT6 V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.3 V/ C V GE = V, I C = 1mA ( C-175 C) CT6 1.6 1.95 I C = 2A, V GE = 15V, T J = C 5,6,7 V CE(on) Collector-to-Emitter Saturation Voltage 2.3 V I C = 2A, V GE = 15V, T J = 15 C 9,1,11 2. I C = 2A, V GE = 15V, T J = 175 C V GE(th) Gate Threshold Voltage. 6.5 V V CE = V GE, I C = 7µA 9, 1, V GE(th) / TJ Threshold Voltage temp. coefficient -18 mv/ C V CE = V GE, I C = 1.mA ( C - 175 C) 11, 12 gfe Forward Transconductance 17 S V CE = 5V, I C = 2A, PW = 8µs I CES Collector-to-Emitter Leakage Current 2. µa V GE = V, V CE = 6V 775 V GE = V, V CE = 6V, T J = 175 C V FM Diode Forward Voltage Drop 1.8 2.6 V I F = 2A 8 1.28 I F = 2A, T J = 175 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±2V Switching Characteristics @ T J = C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig Q g Total Gate Charge (turn-on) 5 75 I C = 2A 2 Q ge Gate-to-Emitter Charge (turn-on) 13 2 nc V GE = 15V CT1 Q gc Gate-to-Collector Charge (turn-on) 21 31 V CC = V E on Turn-On Switching Loss 115 21 I C = 2A, V CC = V, V GE = 15V CT E off Turn-Off Switching Loss 6 7 µj R G = 1Ω, L = 2µH, L S = 15nH, T J = C E total Total Switching Loss 715 91 Energy losses include tail & diode reverse recovery t d(on) Turn-On delay time 1 53 I C = 2A, V CC = V, V GE = 15V CT t r Rise time 22 31 ns R G = 1Ω, L = 2µH, L S = 15nH, T J = C t d(off) Turn-Off delay time 1 115 t f Fall time 29 1 E on Turn-On Switching Loss 2 I C = 2A, V CC = V, V GE =15V 13, 15 E off Turn-Off Switching Loss 8 µj R G =1Ω, L=1µH, L S =15nH, T J = 175 C e CT E total Total Switching Loss 126 Energy losses include tail & diode reverse recovery WF1, WF2 t d(on) Turn-On delay time I C = 2A, V CC = V, V GE = 15V 1, 16 t r Rise time 2 ns R G = 1Ω, L = 2µH, L S = 15nH CT t d(off) Turn-Off delay time 1 T J = 175 C WF1 t f Fall time 39 WF2 C ies Input Capacitance 19 pf V GE = V 23 C oes Output Capacitance 129 V CC = 3V C res Reverse Transfer Capacitance 5 f = 1.Mhz T J = 175 C, I C = 96A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 8V, Vp =6V CT2 Rg = 1Ω, V GE = +15V to V SCSOA Short Circuit Safe Operating Area 5 µs V CC = V, Vp =6V 22, CT3 Rg = 1Ω, V GE = +15V to V Erec Reverse Recovery Energy of the Diode 621 µj T J = 175 C 17, 18, 19 t rr Diode Reverse Recovery Time 89 ns V CC = V, I F = 2A 2, 21 I rr Peak Reverse Recovery Current 37 A V GE = 15V, Rg = 1Ω, L =2µH, L s = 15nH WF3 WF Notes: V CC = 8% (V CES ), V GE = 2V, L = 1µH, R G = 1Ω. Pulse width limited by max. junction temperature. ƒ Refer to AN-186 for guidelines for measuring V (BR)CES safely. 2 www.irf.com
I CE (A) I CE (A) I C (A) I C (A) I C (A) P tot (W) IRGS/SL62DPbF 5 3 5 35 3 2 15 2 15 1 1 5 5 2 6 8 1 12 1 16 18 2 6 8 1 12 1 16 18 T C ( C) T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 1 1 Fig. 2 - Power Dissipation vs. Case Temperature 1 1µsec 1 1 9 1µsec 1 1msec Tc = C Tj = 175 C DC Single Pulse.1 1 1 1 1 1 Fig. 3 - Forward SOA T C = C, T J 175 C; V GE =15V 1 1 1 1 1 9 Fig. - Reverse Bias SOA T J = 175 C; V GE =15V 8 8 7 6 5 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 7 6 5 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 3 3 2 2 1 1 1 2 3 5 6 7 8 1 2 3 5 6 7 8 Fig. 5 - Typ. IGBT Output Characteristics T J = - C; tp = 8µs Fig. 6 - Typ. IGBT Output Characteristics T J = C; tp = 8µs www.irf.com 3
I CE (A) I CE (A) I F (A) IRGS/SL62DPbF 9 12 8 7 6 5 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 1 8 6 - c C 175 C 3 2 1 2 1 2 3 5 6 7 8 Fig. 7 - Typ. IGBT Output Characteristics T J = 175 C; tp = 8µs 2 18 16 1. 1. 2. 3. V F (V) Fig. 8 - Typ. Diode Forward Characteristics tp = 8µs 2 18 16 1 12 1 8 I CE = 12A I CE = 2A I CE = 8A 12 1 8 I CE = 12A I CE = 2A I CE = 8A 6 6 2 2 5 1 15 2 5 1 15 2 V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = - C Fig. 1 - Typical V CE vs. V GE T J = C 2 12 18 16 1 12 I CE = 12A 1 8 T J = C T J = 175 C 1 8 6 I CE = 2A I CE = 8A 6 2 2 5 1 15 2 5 1 15 V GE (V) V GE (V) Fig. 11 - Typical V CE vs. V GE T J = 175 C Fig. 12 - Typ. Transfer Characteristics V CE = 5V; tp = 1µs www.irf.com
I RR (A) I RR (A) Energy (µj) Swiching Time (ns) Energy (µj) Swiching Time (ns) 18 16 1 1 IRGS/SL62DPbF td OFF 12 1 E OFF 1 td ON 8 t F 6 E ON 1 t R 2 1 2 3 5 6 I C (A) 1 1 2 3 5 I C (A) Fig. 13 - Typ. Energy Loss vs. I C T J = 175 C; L = 2µH; V CE = V, R G = 1Ω; V GE = 15V 16 Fig. 1 - Typ. Switching Time vs. I C T J = 175 C; L = 2µH; V CE = V, R G = 1Ω; V GE = 15V 1 1 12 1 8 E ON E OFF 1 td OFF 6 td ON t F 2 Fig. 15 - Typ. Energy Loss vs. R G T J = 175 C; L = 2µH; V CE = V, I CE = 2A; V GE = 15V 35 3 5 75 1 1 Rg (Ω) R G = 1Ω R G = 22Ω t R 1 5 75 1 1 R G (Ω) Fig. 16 - Typ. Switching Time vs. R G T J = 175 C; L = 2µH; V CE = V, I CE = 2A; V GE = 15V 5 35 3 2 R G = 7Ω 2 15 R G = 1Ω 15 1 1 1 2 3 5 6 5 5 75 1 1 I F (A) R G (Ω) Fig. 17 - Typ. Diode I RR vs. I F T J = 175 C Fig. 18 - Typ. Diode I RR vs. R G T J = 175 C www.irf.com 5
Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) Energy (µj) Time (µs) I RR (A) Q RR (µc) IRGS/SL62DPbF 5 35 3 2 35 3 2 1Ω 7Ω 8A 22Ω 2A 1Ω 15 1 15 1 12A 5 5 1 15 di F /dt (A/µs) Fig. 19 - Typ. Diode I RR vs. di F /dt V CC = V; V GE = 15V; I F = 2A; T J = 175 C 5 5 1 15 di F /dt (A/µs) Fig. 2 - Typ. Diode Q RR vs. di F /dt V CC = V; V GE = 15V; T J = 175 C 1 16 28 8 1 2 6 R G = 1Ω R G = 22Ω R G = 7Ω R G = 1Ω 12 1 8 2 16 12 Current (A) 2 6 8 1 1 2 3 5 6 I F (A) Fig. 21 - Typ. Diode E RR vs. I F T J = 175 C 8 1 12 1 16 18 V GE (V) Fig. 22 - V GE vs. Short Circuit Time V CC = V; T C = C 16 1 V CES = 3V 1 Cies 12 1 V CES = V 8 1 Coes 6 Cres 2 1 2 6 8 1 5 1 15 2 3 35 5 5 55 Q G, Total Gate Charge (nc) Fig. 23 - Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig. 2 - Typical Gate Charge vs. V GE I CE = 2A; L = 6µH 6 www.irf.com
IRGS/SL62DPbF 1 Thermal Response ( Z thjc ) D =.5.1.2.1.1.5.2.1 R 1 R 2 R 1 R 2 τ J τ J τ 1 τ τ 2 1 τ 2 τ C τ Ri ( C/W) τi (sec).2329.23.3631.79.1 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/ri Ci i/ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 t 1, Rectangular Pulse Duration (sec) Fig. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 1 D =.5 Thermal Response ( Z thjc ).1.1.1.2.1.5.2.1 SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri Ri ( C/W) τi (sec).76.763.67.328.6.23686 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 1 t 1, Rectangular Pulse Duration (sec) τ C τ Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7
IRGS/SL62DPbF L 1K DUT L VC C 8 V Rg DUT 8V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L x DC DUT 36V VCC - 5V Rg DUT / DRIVER VCC Fig.C.T.3 - S.C. SOA Circuit Fig.C.T. - Switching Loss Circuit R = VCC ICM Rg DUT VCC Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit 8 www.irf.com
IRGS/SL62DPbF 6 tf 3 6 6 5 5 5 9% I CE 2 V CE tr VCE (V) 3 2 I CE V CE 15 1 VCE (V) 3 2 9% test I CE 3 2 5% V CE 1% I CE 1 5 1 1 5% I CE 5% V CE E OFF Loss -1 -..1.6 Time(µs) -5-1 E ON 11.7 11.9 12.1 12.3 Time (µs) -1 Fig. WF1 - Typ. Turn-off Loss Waveform @ T J = 175 C using Fig. CT. Fig. WF2 - Typ. Turn-on Loss Waveform @ T J = 175 C using Fig. CT. 3 6 3 2 Q RR 5 I CE 1 t RR 2 IRR (A) -1-2 Peak I RR 1% Peak I RR VCE (V) 3 2 V CE 15 1 ICE (A) -3 1 5 - -5 -.15 -.5.5.15. time (µs) Fig. WF3 - Typ. Diode Recovery Waveform @ T J = 175 C using Fig. CT. -1-5.. 5. 1. time (µs) Fig. WF - Typ. S.C. Waveform @ T J = C using Fig. CT.3-5 www.irf.com 9
IRGS/SL62DPbF D 2 Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D 2 Pak (TO-263AB) Part Marking Information 7+,6,6$1,5)6:,7+ /27&2'(,17(51$7,21$/ $66(%/('21:: 5(&7,),(5,17+($66(%/</,1(/ /2*2 $66(%/< /27&2'( )6 3$5718%(5 '$7(&2'( <($5 :((. /,1(/,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< /27&2'( )6 3$5718%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(%/<6,7(&2'( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html 1 www.irf.com
TO-262 Package Outline Dimensions are shown in millimeters (inches) IRGS/SL62DPbF TO-262 Part Marking Information (;$3/( 7+,6,6$1,5// /27&2'( $66(%/('21::,17+($66(%/</,1(&,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< /27&2'( 3$5718%(5 '$7(&2'( <($5 :((. /,1(&,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< /27&2'( 3$5718%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(%/<6,7(&2'( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html www.irf.com 11
IRGS/SL62DPbF D 2 Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.6 (.63) 1.5 (.59).1 (.161) 3.9 (.153) 1.6 (.63) 1.5 (.59).368 (.15).32 (.135) FEED DIRECTION 1.85 (.73) 1.65 (.65) 11.6 (.57) 11. (.9) 15.2 (.69) 15.22 (.61) 2.3 (.957) 23.9 (.91) TRL 1.9 (.29) 1.7 (.21) 16.1 (.63) 15.9 (.626) 1.75 (.69) 1. (.9).72 (.136).52 (.178) FEED DIRECTION 13.5 (.532) 12.8 (.5) 27. (1.79) 23.9 (.91) 33. (1.173) MAX. 6. (2.362) MIN. NOTES : 1. COMFORMS TO EIA-18. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB.. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26. (1.39) 2. (.961) 3 3. (1.197) MAX. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9, USA Tel: (31) 2-715 TAC Fax: (31) 2-793 Visit us at www.irf.com for sales contact information. 12/29 12 www.irf.com