Optocoupler with Phototransistor Output Description The TCLT1.. Series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 4-lead SO6L package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. TCLT1.. Series Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 15231 For appl. class I IV at mains voltage 3 V For appl. class I III at mains voltage 6 V according to VDE 884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. VDE Standards 4 3 1 2 15242 These couplers perform safety functions according to the following equipment standards: VDE 884 Optocoupler for electrical safety requirements (will be replaced by IEC 747 5 1.2.3) IEC 95/EN 695 Office machines (applied for reinforced isolation for mains voltage 4 V RMS ) VDE 84 Telecommunication apparatus and data processing IEC 65 Safety for mains-operated electronic and related household apparatus C Rev. A3, 19 Mar 1 1 (12)
TCLT1.. Series Order Instruction Ordering Code CTR Ranking Remarks TCLT 5 to 6% 4 Pin = Single channel TCLT1 4 to 8% 4 Pin = Single channel TCLT2 63 to 125% 4 Pin = Single channel TCLT3 to 2% 4 Pin = Single channel TCLT5 5 to 15% 4 Pin = Single channel TCLT6 to 3% 4 Pin = Single channel TCLT7 8 to 16% 4 Pin = Single channel TCLT8 13 to 26% 4 Pin = Single channel TCLT9 2 to 4% 4 Pin = Single channel Features Approvals: BSI: BS EN 43, BS EN 695 (BS 415), BS EN 695 (BS 72), Certificate number 781 and 742 Underwriters Laboratory (UL) 1577 recognized, file number E-76222 Double Protection CSA (C-UL) 1577 recognized file number E- 76222 - Double Protection VDE 884, Certificate number 132473 VDE 884 related features: Rated impulse voltage (transient overvoltage) V IOTM = 8 kv peak Isolation test voltage (partial discharge test voltage) V pd = 1.6 kv Rated isolation voltage (RMS includes DC) V IOWM = 6 V RMS (848 V peak) Rated recurring peak voltage (repetitive) V IORM = 6 V RMS Creepage current resistance according to VDE 33/IEC 112 Comparative Tracking Index: CTI 175 Thickness through insulation.75 mm Creepage distance > 8 mm Tested acc. 695: Am4: 1997 clause 2.9.6. General features: Low profile package CTR offered in 9 groups Isolation materials according to UL94-VO Pollution degree 2 (DIN/VDE 11 / resp. IEC 664) Climatic classification 55//21 (IEC 68 part 1) Special construction: Therefore, extra low coupling capacity of typical.2 pf, high Common Mode Rejection Low temperature coefficient of CTR Coupling System W 2 (12) Rev. A3, 19 Mar 1
Absolute Maximum Ratings Input (Emitter) TCLT1.. Series Parameter Test Conditions Symbol Value Unit Reverse voltage V R 6 V Forward current I F 6 ma Forward surge current t p 1 s I FSM 1.5 A Power dissipation T amb 25C P V mw Junction temperature T j 125 C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Collector peak current t p /T =.5, t p 1 ms I CM ma Power dissipation T amb 25C P V 15 mw Junction temperature T j 125 C Coupler Parameter Test Conditions Symbol Value Unit Isolation test voltage (RMS) V IO 5 kv Total power dissipation T amb 25C P tot 25 mw Operating ambient temperature T amb 4 to + C range Storage temperature range T stg 4 to + C Soldering temperature T sd 235 C Rev. A3, 19 Mar 1 3 (12)
TCLT1.. Series Electrical Characteristics (T amb = 25 C) Input (Emitter) Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage I F = ± 5 ma V F 1.25 1.6 V Junction capacitance V R = V, f = 1 MHz C j 5 pf Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage I C = 1 ma V CEO 7 V Emitter collector voltage I E = A V ECO 7 V Collector emitter cut-off current V CE = 2 V, I f =, E = I CEO 1 na Coupler Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter saturation I F = 1 ma, I C = 1 ma V CEsat.3 V voltage Cut-off frequency V CE = 5 V, I F = 1 ma, f c 11 khz R L = Coupling capacitance f = 1 MHz C k.3 pf Current Transfer Ratio (CTR) Parameter Test Conditions Type Symbol Min. Typ. Max. Unit I C/IF V CE = 5 V, I F = 5 ma TCLT CTR.5 6. V CE = 5 V, I F = 1 ma TCLT1 CTR.4.8 V CE = 5 V, I F = 1 ma TCLT2 CTR.63 1.25 V CE = 5 V, I F = 1 ma TCLT3 CTR 1. 2. V CE = 5 V, I F = 1 ma TCLT1 CTR.13.3 V CE = 5 V, I F = 1 ma TCLT2 CTR.22.45 V CE = 5 V, I F = 1 ma TCLT3 CTR.34.7 V CE = 5 V, I F = 5 ma TCLT5 CTR.5 1.5 V CE = 5 V, I F = 5 ma TCLT6 CTR 1. 3. V CE = 5 V, I F = 5 ma TCLT7 CTR.8 1.6 V CE = 5 V, I F = 5 ma TCLT8 CTR 1.3 2.6 V CE = 5 V, I F = 5 ma TCLT9 CTR 2. 4. 4 (12) Rev. A3, 19 Mar 1
Maximum Safety Ratings (according to VDE 884) see figure 1 This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Input (Emitter) TCLT1.. Series Parameters Test Conditions Symbol Value Unit Forward current I si 13 ma Output (Detector) Parameters Test Conditions Symbol Value Unit Power dissipation T amb 25C P si 265 mw Coupler Parameters Test Conditions Symbol Value Unit Rated impulse voltage V IOTM 8 kv Safety temperature T si 15 C Insulation Rated Parameters (according to VDE 884) Parameter Test Conditions Symbol Min. Typ. Max. Unit Partial discharge test voltage Routine test %, t test = 1 s V pd 1.6 kv Partial discharge test voltage t Tr = 6 s, ttest = 1 s, V IOTM 8 kv Lot test (sample test) (see figure 2) V pd 1.3 kv Insulation resistance V IO = 5 V R IO 1 12 V IO = 5 V, R IO 1 11 T amb = C V IO = 5 V, R IO 1 9 T amb = 15C (construction test only) P tot Total Power Dissipation ( mw ) 94 9182 3 25 Phototransistor Psi ( mw ) 2 15 5 IR-Diode Isi ( ma ) 25 5 75 125 T si Safety Temperature ( C ) 15 V IOTM 1393 V Pd V IOWM V IORM t 1 t 1, t 2 = 1 to 1 s t 3, t 4 = 1 s t test = 1 s t stres = 12 s t Tr = 6 s t 3 t test t 4 t 2 t stres t Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN VDE 884 Rev. A3, 19 Mar 1 5 (12)
TCLT1.. Series Switching Characteristics Parameter Test Conditions Symbol Typ. Unit Delay time V S = 5 V, I C = 2 ma, RL = (see figure 3) t d 3. s Rise time t r 3. s Turn-on time t on 6. s Storage time t s.3 s Fall time t f 4.7 s Turn-off time t off 5. s Turn-on time V S = 5 V, I F = 1 ma, RL = 1 k (see figure 4) t on 9. s Turn-off time t off 1. s I F I F + 5 V I C = 2 ma; adjusted through input amplitude I F 96 11698 R G = 5 t p T =.1 t p = 5 s 5 Channel I Channel II Oscilloscope R L = 1 M C L = 2 pf I C % 9% t p t 95 184 Figure 1. Test circuit, non-saturated operation 1% t r t t d t s t f I F R G = 5 t p T =.1 t p = 5 s I F = 1 ma + 5 V I C t p t d t r t on (= t d + t r ) t on t off pulse duration t s delay time t f rise time t off (= t s + t f ) turn-on time Figure 3. Switching times storage time fall time turn-off time Channel I Oscilloscope 5 1 k Channel II R L > 1 M C L < 2 pf 95 1843 Figure 2. Test circuit, saturated operation 6 (12) Rev. A3, 19 Mar 1
Typical Characteristics (T amb = 25 C, unless otherwise specified) TCLT1.. Series P tot Total Power Dissipation ( mw ) 3 Coupled device 25 2 Phototransistor 15 IR-diode 5 4 8 12 96 117 T amb Ambient Temperature ( C ) I CEO Collector Dark Current, with open Base ( na ) 95 1126 1 V CE =2V I F = 1 25 5 75 T amb Ambient Temperature ( C ) Figure 4. Total Power Dissipation vs. Ambient Temperature Figure 7. Collector Dark Current vs. Ambient Temperature I F Forward Current ( ma ).. 1. 1. I C Collector Current ( ma ) 1 1.1 V CE =5V.1.2.4.6.8 1. 1.2 1.4 1.6 1.8 2. 96 11862 V F Forward Voltage ( V ) 95 1127.1.1 1 1 I F Forward Current ( ma ) Figure 5. Forward Current vs. Forward Voltage Figure 8. Collector Current vs. Forward Current CTR rel Relative Current Transfer Ratio 95 1125 2. 1.5 1..5 25 25 5 V CE =5V I F =5mA T amb Ambient Temperature ( C ) 75 I C Collector Current ( ma ) 95 1985 1 1 I F =5mA.1.1 1 1 2mA 1mA 5mA 2mA 1mA V CE Collector Emitter Voltage ( V ) Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature Figure 9. Collector Current vs. Collector Emitter Voltage Rev. A3, 19 Mar 1 7 (12)
TCLT1.. Series V CEsat Collector Emitter Saturation Voltage ( V ) 1..8.6.4.2 CTR=5% 1 1 1% 2% t on / t off Turn on / Turn off Time ( s ) 1 8 6 4 2 t on t off Non Saturated Operation V S =5V R L = 2 4 6 1 95 1128 I C Collector Current ( ma ) 95 113 I C Collector Current ( ma ) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current Figure 12. Turn on / off Time vs. Collector Current CTR Current Transfer Ratio ( % ) 1 V CE =5V 1.1 1 1 t on / t off Turn on / Turn off Time ( s ) 5 4 3 2 1 Saturated Operation V S =5V R L =1k 5 1 15 t off t on 2 95 1129 I F Forward Current ( ma ) 95 1131 I F Forward Current ( ma ) Figure 11. Current Transfer Ratio vs. Forward Current Figure 13. Turn on / off Time vs. Forward Current Pin 1 Indication Type TCLT 91WTK27 15244 Date Code (YM) System Letter Company Logo Production Location Figure 14. Marking example 8 (12) Rev. A3, 19 Mar 1
TCLT1.. Series Dimensions of TCLT1.. in mm 15243 Rev. A3, 19 Mar 1 9 (12)
TCLT1.. Series Dimensions of Reel in mm W 1 N A Reel Hub W 2 16515 Version Tape Width A N W 1 W 2 max G 16 33 ± 1 ± 1.5 16.4 + 2 22.4 Dimensions of Leader and Trailer in mm Trailer no devices devices Leader no devices End Start min. 2 min. 4 96 11818 1 (12) Rev. A3, 19 Mar 1
TCLT1.. Series Dimensions of Tape in mm 16516 Rev. A3, 19 Mar 1 11 (12)
TCLT1.. Series Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 91/69/EEC Annex A, B and C ( transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Telephone: 49 ()7131 67 2831, Fax number: 49 ()7131 67 2423 12 (12) Rev. A3, 19 Mar 1