5/ I27124 rev. D 2/3 "FULL-BRIDGE" IGBT MTP 2MT12UF UltraFast NPT IGBT Features UltraFast Non Punch Through (NPT) Technology Positive V CE(ON) Temperature Coefficient 1µs Short Circuit Capability HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery Low Diode V F Square RBSOA Aluminum Nitride DBC Very Low Stray Inductance Design for High Speed Operation UL approved (File E78996) Benefits Optimized for Welding, UPS and SMPS Applications Rugged with UltraFast Performance Benchmark Efficiency above 2KHz Outstanding ZVS and Hard Switching Operation Low EMI, requires Less Snubbing Excellent Current Sharing in Parallel Operation Direct Mounting to Heatsink PCB Solderable Terminals Very Low Junction-to-Case Thermal Resistance V CES = 12V I C = 4A T C = 25 C MMTP Absolute Maximum Ratings Parameters Max Units V CES Collector-to-Emitter Breakdown Voltage 12 V I C Continuos Collector Current @ T C = 25 C 4 A @ T C = 16 C 2 I CM Pulsed Collector Current 1 I LM Clamped Inductive Load Current 1 I F Diode Continuous Forward Current @ T C = 16 C 25 I FM Diode Maximum Forward Current 1 V GE Gate-to-Emitter Voltage ± 2 V V ISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 25 P D Maximum Power Dissipation (only IGBT) @ T C = 25 C 24 W @ T C = 1 C 96 1
2MT12UF I27124 rev. D 2/3 Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 12 V V GE = V, I C = 25µA V (BR)CES / Temperature Coeff. of +1.3 V/ C V GE = V, I C = 3mA (25-125 C) T J Breakdown Voltage V CE(ON) Collector-to-Emitter Saturation Voltage 3.29 3.59 V V GE = 15V, I C = 2A 4.42 4.66 V GE = 15V, I C = 4A 3.87 4.11 V GE = 15V, I C = 2A T J = 125 C 5.32 5.7 V GE = 15V, I C = 4A T J = 125 C 3.99 4.27 V GE = 15V, I C = 2A T J = 15 C V GE(th) Gate Threshold Voltage 4 6 V V CE = V GE, I C = 25µA V GE(th) / Temperature Coeff. of -14 mv/ C V CE = V GE, I C = 3mA (25-125 C) T J Threshold Voltage g fe Transconductance 17.5 S V CE = 5V, I C = 2A, PW = 8µs I CES Zero Gate Voltage Collector Current (1) 25 µa V GE = V, V CE = 12V, T J = 25 C.7 3. ma V GE = V, V CE = 12V, T J = 125 C 2.9 9. V GE = V, V CE = 12V, T J = 15 C I GES Gate-to-Emitter Leakage Current ±25 na V GE = ± 2V (1) I CES includes also opposite leg overall leakage Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Qg Total Gate Charge (turn-on) 176 264 nc I C = 2A Qge Gate-Emitter Charge (turn-on) 19 3 V CC = 6V Qgc Gate-Collector Charge (turn-on) 89 134 V GE = 15V E on Turn-On Switching Loss 513 77 µj V CC = 6V, I C = 2A E off Turn-Off Switching Loss 42 63 V GE = 15V, R g = 5Ω, L = 2µH E tot Total Switching Loss 915 1373 T J = 25 C, Energy losses include tail and diode reverse recovery E on Turn-On Switching Loss 93 1395 µj V CC = 6V, I C = 2A E off Turn-Off Switching Loss 61 915 V GE = 15V, R g = 5Ω, L = 2µH E tot Total Switching Loss 154 231 T J = 125 C, Energy losses include tail and diode reverse recovery C ies Input Capacitance 253 379 pf V GE = V C oes Output Capacitance 344 516 V CC = 3V C res Reverse Transfer Capacitance 78 117 f = 1. MHz RBSOA Reverse Bias Safe Operating Area full square T J = 15 C, I C = 12A V CC = 1V, V p = 12V R g = 5Ω, V GE = +15V to V SCSOA Short Circuit Safe Operating Area 1 µs T J = 15 C V CC = 9V, V p = 12V R g = 5Ω, V GE = +15V to V 2
2MT12UF I27124 rev. D 2/3 Diode Characteristics @ T J = 25 C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions V FM Diode Forward Voltage Drop 2.48 2.94 V I C = 2A 3.28 3.9 I C = 4A 2.44 2.84 I C = 2A, T J = 125 C 3.45 4.14 I C = 4A, T J = 125 C 2.21 2.93 I C = 2A, T J = 15 C E rec Reverse Recovery Energy of the Diode 42 63 µj V GE = 15V, R g = 5Ω, L = 2µH trr Diode Reverse Recovery Time 98 15 ns V CC = 6V, I C = 2A Irr Peak Reverse Recovery Current 33 5 A T J = 125 C Thermal- Mechanical Specifications Parameters Min Typ Max Units T J Operating Junction Temperature Range - 4 15 C T STG Storage Temperature Range - 4 125 R thjc Junction-to-Case IGBT.35.52 C/ W Diode.4.61 R thcs Case-to-Sink Module.6 (Heatsink Compound Thermal Conductivity = 1 W/mK) Clearance (external shortest distance in air 5.5 mm between two terminals) Creepage (shortest distance along external 8 surface of the insulating material between 2 terminals) T Mounting Torque (2) 3 ± 1% Nm Wt Weight 66 g (oz) (2) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads 3
I C (A) I C (A) I C (A) P tot (W) 2MT12UF I27124 rev. D 2/3 5 25 4 2 3 15 2 1 1 5 2 4 6 8 1 12 14 16 T C ( C) 2 4 6 8 1 12 14 16 T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1 1 1 1 1 µs 1 1 µs 1 1ms 1.1 DC.1 1 1 1 1 1 1 1 1 1 1 Fig. 3 - Forward SOA T C = 25 C; T J 15 C Fig. 4 - Reverse Bias SOA T J = 15 C; V GE =15V 4
I CE (A) I F (A) I CE (A) I CE (A) 2MT12UF I27124 rev. D 2/3 1 8 6 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 1 8 6 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 4 4 2 2 2 4 6 8 1 2 4 6 8 1 Fig. 5 - Typ. IGBT Output Characteristics T J = -4 C; tp = 8µs Fig. 6 - Typ. IGBT Output Characteristics T J = 25 C; tp = 8µs 1 8 6 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 12 1 8-4 C 25 C 125 C 6 4 4 2 2 2 4 6 8 1. 1. 2. 3. 4. 5. V F (V) Fig. 7 - Typ. IGBT Output Characteristics T J = 125 C; tp = 8µs Fig. 8 - Typ. Diode Forward Characteristics tp = 8µs 5
I CE (A) 2MT12UF I27124 rev. D 2/3 2 2 18 16 14 I CE = 4A I CE = 2A I CE = 1A 18 16 14 I CE = 1A I CE = 2A I CE = 4A 12 12 1 1 8 8 6 6 4 4 2 2 5 1 15 2 V GE (V) 5 1 15 2 V GE (V) Fig. 9 - Typical V CE vs. V GE T J = -4 C Fig. 1 - Typical V CE vs. V GE T J = 25 C 2 18 16 14 12 I CE = 1A I CE = 2A I CE = 4A 3 25 2 T J = 25 C T J = 15 C 1 8 15 6 1 4 2 5 5 1 15 2 V GE (V) 5 1 15 2 V GE (V) Fig. 11 - Typical V CE vs. V GE T J = 125 C Fig. 12 - Typ. Transfer Characteristics V CE = 5V; tp = 1µs 6
Energy (µj) Swiching Time (ns) Swiching Time (ns) 2MT12UF I27124 rev. D 2/3 24 1 2 Energy (µj) 16 E ON td OFF 12 1 t F 8 E OFF td ON 4 t R 1 2 3 4 5 I C (A) 1 1 2 3 4 5 I C (A) Fig. 13 - Typ. Energy Loss vs. I C T J = 15 C; L=1.4mH; V CE = 4V R G = 5Ω; V GE = 15V Fig. 14 - Typ. Switching Time vs. I C T J = 15 C; L=1.4mH; V CE = 4V R G = 1Ω; V GE = 15V 2 1 16 E ON td OFF 12 8 E OFF 1 t F td ON 4 t R 1 2 3 4 5 6 R G ( ) 1 1 2 3 4 5 6 R G ( ) Fig. 15 - Typ. Energy Loss vs. R G T J = 15 C; L=1.4mH; V CE = 4V I CE = 5.A; V GE = 15V Fig. 16 - Typ. Switching Time vs. R G T J = 15 C; L=1.4mH; V CE = 4V I CE = 5.A; V GE = 15V 7
I RR (A) Q RR (µc) I RR (A) I RR (A) 2MT12UF I27124 rev. D 2/3 4 4 3 R G = 5.Ω R G = 1 Ω 3 2 R G = 3 Ω 2 R G = 5 Ω 1 1 5 1 15 2 25 3 35 I F (A) 1 2 3 4 5 6 R G (Ω) Fig. 17 - Typical Diode I RR vs. I F T J = 15 C Fig. 18 - Typical Diode I RR vs. R G T J = 15 C; I F = 5.A 4 3. 35 2.5 5.Ω 3 2. 1 Ω 3A 25 1.5 3Ω 2A 2 1. 5Ω 1A 15.5 1 2 4 6 8 1 di F /dt (A/µs). 2 4 6 8 1 12 di F /dt (A/µs) Fig. 19- Typical Diode I RR vs. di F /dt V CC = 4V; V GE = 15V; I CE = 5.A; T J = 15 C Fig. 2 - Typical Diode Q RR V CC = 4V; V GE = 15V;T J = 15 C 8
V GE (V) Capacitance (pf) 2MT12UF I27124 rev. D 2/3 1 Cies 1 Coes 1 Cres 1 2 4 6 8 1 Fig. 21- Typ. Capacitance vs. V CE V GE = V; f = 1MHz 16 14 12 6V 1 8 6 4 2 4 8 12 16 2 Q G, Total Gate Charge (nc) Fig. 22 - Typical Gate Charge vs. V GE I CE = 5.A; L = 6µH 9
2MT12UF I27124 rev. D 2/3 1 D =.5 Thermal Response ( Z thjc ).1.2.1.5.1.1.2.1 SINGLE PULSE ( THERMAL RESPONSE ) τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= i/ri R 1 R 2 R 3 R 1 R 2 R 3 τ C τ Ri ( C/W) τi (sec).161.759.21.17991.147.694 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 1 1 t 1, Rectangular Pulse Duration (sec) Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 D =.5 Thermal Response ( Z thjc ).1.2.1.5.1.1.2.1 SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 τ J τ J τ 1 τ τ 2 τ 3 1 τ 2 τ 3 Ci= τi/ri Ci= i/ri R 2 R2 R 3 R3 τ C τ Ri ( C/W) τi (sec).238.117.312.3381.61.77744 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 1 1 t 1, Rectangular Pulse Duration (sec) Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 1
2MT12UF I27124 rev. D 2/3 L 1K DUT L VCC 8 V Rg DUT 1V Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit Driver diode clamp / DUT L D C DUT 9V - 5V Rg DUT / DRIVER VCC Fig. CT.3 - S.C. SOA Circuit Fig. CT.4 - Switching Loss Circuit 11
2MT12UF I27124 rev. D 2/3 Outline Table Electrical Diagram Resistance in ohms Dimensions in millimetres 12
2MT12UF I27124 rev. D 2/3 Ordering Information Table Device Code 2 MT 12 U F 1 2 3 4 5 1 - Current rating (2 = 2A) 2 - Essential Part Number 3 - Voltage code (12= 12V) 4 - Speed/ Type (U = Ultra Fast IGBT) 5 - Circuit Configuration (F = Full Bridge) 6 - Special Option Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) 252-715 TAC Fax: (31) 252-739 Visit us at for sales contact information. 1/3 13