F685 V P-Channel PowerTrench MOFET Features 8. A, V R (ON) =.7 Ω @ V G = V R (ON) =.35 Ω @ V G =.5 V Fast switching speed High performance trench technology for extremely low R (ON) High power and current handling capability O-8 Pin G Applications Power management Load switch Battery protection General escription This P-Channel MOFET is a rugged gate version of ON emiconductor s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (.5V V). 5 6 7 8 3 F685 V P-Channel PowerTrench MOFET Absolute Maximum Ratings T A = 5 C unless otherwise noted ymbol Parameter Ratings Units V rain-ource Voltage V V G Gate-ource Voltage ± V I rain Current - Continuous (Note a) 8. A - Pulsed 5 P Power issipation for ingle Operation (Note a).5 W (Note b). (Note c). T J, T TG Operating and torage Junction Temperature Range 55 to +5 C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) 5 C/W R θja Thermal Resistance, Junction-to-Ambient (Note c) 5 R θjc Thermal Resistance, Junction-to-Case (Note ) 5 Package Marking and Ordering Information evice Marking evice Reel ize Tape width Quantity F685 F685 3 mm 5 units 5 emiconductor Components Industries, LLC. October-7, Rev. 3 Publication Order Number: F685/
Electrical Characteristics T A = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain ource Breakdown Voltage V G = V, I = 5 µa V BV T J Breakdown Voltage Temperature Coefficient I = 5 µa, Referenced to 5 C 3 mv/ C I Zero Gate Voltage rain Current V = 3 V, V G = V µa I G Gate Body Leakage V G = ± V, V = V ± na On Characteristics (Note ) V G(th) Gate Threshold Voltage V = V G, I = 5 µa.6 3 V VG(th) T J R (on) Gate Threshold Voltage Temperature Coefficient tatic rain ource On Resistance I = 5 µa, Referenced to 5 C.7 mv/ C V G = V, I = 8. A V G =.5 V, I = 7 A V G = V, I = 8. A, T J = 5 C g F Forward Transconductance V = 5 V, I = 8. A ynamic Characteristics C iss Input Capacitance V = V, V G = V, 87 pf C oss Output Capacitance f =. MHz 56 pf C rss Reverse Transfer Capacitance 3 pf R G Gate Resistance V G = 5 mv, f = MHz Ω witching Characteristics (Note ) t d(on) Turn On elay Time V = V, I = A, 5 ns t r Turn On Rise Time V G = V, R GEN = 6 Ω ns t d(off) Turn Off elay Time 5 8 ns t f Turn Off Fall Time 8 3 ns Q g Total Gate Charge V = V, I = 8. A, 9 7 nc Q gs Gate ource Charge V G = 5 V 5.6 nc Q gd Gate rain Charge 6. nc rain ource iode Characteristics V rain ource iode Forward Voltage V G = V, I =. A (Note ).7. V t rr iode Reverse Recovery Time I F = 8. A, 6 n Q rr iode Reverse Recovery Charge d if /d t = A/µs 5 nc 9 3 7 35 mω F685 V P-Channel PowerTrench MOFET Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design.. a) 5 C/W when mounted on a in pad of oz copper b) 5 /W when mounted on a. in pad of oz copper c) 5 /W when mounted on a minimum pad. cale : on letter size paper. Pulse Test: Pulse Width < 3µs, uty Cycle <.%
Typical Characteristics: -I, RAIN CURRENT (A) R (ON), NORMALIZE RAIN-OURCE ON-REITANCE 5 3 V G = -V -6.V -.5V -.V -3.5V.5.5.5 3 3.5.5.8.6...8 -V, RAIN TO OURCE VOLTAGE (V) -3.V Figure. On-Region Characteristics. I = -8.A V G = - V R (ON), NORMALIZE RAIN-OURCE ON-REITANCE R (ON), ON-REITANCE (OHM)...8.6.. V G = - 3.5V -.V -.5V -5.V -6.V.8 3 5.9.8.7.6.5..3. -I, RAIN CURRENT (A) -8.V -V Figure. On-Resistance Variation with rain Current and Gate Voltage. T A = 5 C T A = 5 C I = -.A F685 V P-Channel PowerTrench MOFET.6-5 -5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( C). 6 8 -V G, GATE TO OURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure. On-Resistance Variation with Gate-to-ource Voltage. -I, RAIN CURRENT (A) 5 V = -5V T A = -55 C 5 C 3 5 C.5.5 3 3.5.5 -V G, GATE TO OURCE VOLTAGE (V) -I, REVERE RAIN CURRENT (A).... V G = V T A = 5 C 5 C -55 C...6.8. -V, BOY IOE FORWAR VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with ource Current and Temperature. 3
Typical Characteristics: -I, RAIN CURRENT (A) -VG, GATE-OURCE VOLTAGE (V) 8 6 I = -8.A V = -V 5 5 5 3 35 Qg, GATE CHARGE (nc) -3V -V Figure 7. Gate Charge Characteristics. R (ON) LIMIT µs ms ms ms s s C V G = -V. INGLE PULE Rθ JA = 5 C/W T A = 5 C.. -V, RAIN-OURCE VOLTAGE (V) CAPACITANCE (pf) P(pk), PEAK TRANIENT POWER (W) 5 5 5 C R C O C I 5 5 5 3 35 5 3 -V, RAIN TO OURCE VOLTAGE (V) f = MHz V G = V Figure 8. Capacitance Characteristics.... t, TIME (sec) INGLE PULE Rθ JA = 5 C/W T A = 5 C F685 V P-Channel PowerTrench MOFET Figure 9. Maximum afe Operating Area. Figure. ingle Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANIENT THERMAL REITANCE.. =.5...5.. INGLE PULE..... t, TIME (sec) R θja(t) = r(t) * R θ JA P(pk) R θja = 5 C/W t t T J - T A = P * R θja(t) uty Cycle, = t / t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design.
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