1 www.irf.com 5/11/6 现货库存 技术资料 百科信息 热点资讯, 精彩尽在鼎好! INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 µs short circuit SOA Square RBSOA G 1% of the parts tested for 4X rated current (I LM ) Positive V CE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C E n-channel PD - 9721 IRGP463DPbF V CES = 6V I C = 48A, T C = 1 C t SC 5µs, T J(max) = 175 C V CE(on) typ. = 1.65V Benefits High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low V CE (ON) and Low Switching losses Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI C G CE TO-247AC Absolute Maximum Ratings G C E Gate Collector Emitter Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I C @ T C = 25 C Continuous Collector Current 96 I C @ T C = 1 C Continuous Collector Current 48 I CM Pulse Collector Current 192 I LM Clamped Inductive Load Current c 192 A I F @ T C = 25 C Diode Continous Forward Current 96 I F @ T C = 1 C Diode Continous Forward Current 48 I FM Diode Maximum Forward Current e 192 V GE Continuous Gate-to-Emitter Voltage ±2 V Transient Gate-to-Emitter Voltage ±3 P D @ T C = 25 C Maximum Power Dissipation 33 W P D @ T C = 1 C Maximum Power Dissipation 17 T J Operating Junction and -55 to +175 T STG Storage Temperature Range C Soldering Temperature, for 1 sec. 3 (.63 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 1 lbf in (1.1 N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT).45 C/W R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode).92 R θcs Thermal Resistance, Case-to-Sink (flat, greased surface).24 R θja Thermal Resistance, Junction-to-Ambient (typical socket mount) 8
IRGP463DPbF Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 15µA f CT6 V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.3 V/ C V GE = V, I C = 1mA (25 C-175 C) CT6 1.65 2.14 I C = 48A, V GE = 15V, T J = 25 C 5,6,7 V CE(on) Collector-to-Emitter Saturation Voltage 2. V I C = 48A, V GE = 15V, T J = 15 C 9,1,11 2.5 I C = 48A, V GE = 15V, T J = 175 C V GE(th) Gate Threshold Voltage 4. 6.5 V V CE = V GE, I C = 1.4mA 9, 1, V GE(th) / TJ Threshold Voltage temp. coefficient -21 mv/ C V CE = V GE, I C = 1.mA (25 C - 175 C) 11, 12 gfe Forward Transconductance 32 S V CE = 5V, I C = 48A, PW = 8µs I CES Collector-to-Emitter Leakage Current 1. 15 µa V GE = V, V CE = 6V 45 1 V GE = V, V CE = 6V, T J = 175 C V FM Diode Forward Voltage Drop 1.95 2.91 V I F = 48A 8 1.45 I F = 48A, T J = 175 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±2V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig Q g Total Gate Charge (turn-on) 95 14 I C = 48A 24 Q ge Gate-to-Emitter Charge (turn-on) 28 42 nc V GE = 15V CT1 Q gc Gate-to-Collector Charge (turn-on) 35 53 V CC = 4V E on Turn-On Switching Loss 625 1141 I C = 48A, V CC = 4V, V GE = 15V CT4 E off Turn-Off Switching Loss 1275 1481 µj R G = 1Ω, L = 2µH, L S = 15nH, T J = 25 C E total Total Switching Loss 19 2622 Energy losses include tail & diode reverse recovery t d(on) Turn-On delay time 6 78 I C = 48A, V CC = 4V, V GE = 15V CT4 t r Rise time 4 56 ns R G = 1Ω, L = 2µH, L S = 15nH, T J = 25 C t d(off) Turn-Off delay time 145 176 t f Fall time 35 46 E on Turn-On Switching Loss 1625 I C = 48A, V CC = 4V, V GE =15V 13, 15 E off Turn-Off Switching Loss 1585 µj R G =1Ω, L=2µH, L S =15nH, T J = 175 C f CT4 E total Total Switching Loss 321 Energy losses include tail & diode reverse recovery WF1, WF2 t d(on) Turn-On delay time 55 I C = 48A, V CC = 4V, V GE = 15V 14, 16 t r Rise time 45 ns R G = 1Ω, L = 2µH, L S = 15nH CT4 t d(off) Turn-Off delay time 165 T J = 175 C WF1 t f Fall time 45 WF2 C ies Input Capacitance 325 pf V GE = V 23 C oes Output Capacitance 245 V CC = 3V C res Reverse Transfer Capacitance 9 f = 1.Mhz T J = 175 C, I C = 192A 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 48V, Vp =6V CT2 Rg = 1Ω, V GE = +15V to V SCSOA Short Circuit Safe Operating Area 5 µs V CC = 4V, Vp =6V 22, CT3 Rg = 1Ω, V GE = +15V to V Erec Reverse Recovery Energy of the Diode 845 µj T J = 175 C 17, 18, 19 t rr Diode Reverse Recovery Time 115 ns V CC = 4V, I F = 48A 2, 21 I rr Peak Reverse Recovery Current 4 A V GE = 15V, Rg = 1Ω, L =2µH, L s = 15nH WF3 WF4 Notes: V CC = 8% (V CES ), V GE = 2V, L = 2µH, R G = 1Ω. This is only applied to TO-247AC package. ƒ Pulse width limited by max. junction temperature. Refer to AN-186 for guidelines for measuring V (BR)CES safely. 2 www.irf.com
I CE (A) I CE (A) I C (A) I C (A) I C (A) P tot (W) IRGP463DPbF 1 35 9 8 3 7 25 6 5 2 4 15 3 1 2 1 5 25 5 75 1 125 15 175 2 25 5 75 1 125 15 175 2 T C ( C) T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 1 1 Fig. 2 - Power Dissipation vs. Case Temperature 1 1µsec 1µsec 1 1 1msec 1.1 Tc = 25 C Tj = 175 C Single Pulse DC 1 1 1 1 1 1 1 1 1 Fig. 3 - Forward SOA T C = 25 C, T J 175 C; V GE =15V Fig. 4 - Reverse Bias SOA T J = 175 C; V GE =15V 2 2 18 18 16 14 12 1 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 16 14 12 1 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 8 8 6 6 4 4 2 2 2 4 6 8 1 2 4 6 8 1 Fig. 5 - Typ. IGBT Output Characteristics T J = -4 C; tp = 8µs Fig. 6 - Typ. IGBT Output Characteristics T J = 25 C; tp = 8µs www.irf.com 3
I CE (A) I CE (A) I F (A) IRGP463DPbF 2 2 18 16 14 12 1 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 18 16 14 12 1-4 c 25 C 175 C 8 8 6 6 4 4 2 2 2 4 6 8 1 Fig. 7 - Typ. IGBT Output Characteristics T J = 175 C; tp = 8µs 2 18 16 14. 1. 2. 3. 4. V F (V) Fig. 8 - Typ. Diode Forward Characteristics tp = 8µs 2 18 16 14 12 1 8 I CE = 24A I CE = 48A I CE = 96A 12 1 8 I CE = 24A I CE = 48A I CE = 96A 6 6 4 4 2 2 5 1 15 2 5 1 15 2 V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = -4 C Fig. 1 - Typical V CE vs. V GE T J = 25 C 2 2 18 16 18 16 T J = 25 C T J = 175 C 14 14 12 I CE = 24A 12 1 8 I CE = 48A I CE = 96A 1 8 6 6 4 4 2 2 5 1 15 2 5 1 15 V GE (V) V GE (V) Fig. 11 - Typical V CE vs. V GE T J = 175 C Fig. 12 - Typ. Transfer Characteristics V CE = 5V; tp = 1µs 4 www.irf.com
I RR (A) I RR (A) Energy (µj) Swiching Time (ns) Energy (µj) Swiching Time (ns) IRGP463DPbF 6 1 5 E OFF 4 td OFF 3 E ON 1 td ON 2 t F 1 t R 5 1 15 1 2 4 6 8 1 I C (A) I C (A) Fig. 13 - Typ. Energy Loss vs. I C T J = 175 C; L = 2µH; V CE = 4V, R G = 1Ω; V GE = 15V 5 Fig. 14 - Typ. Switching Time vs. I C T J = 175 C; L = 2µH; V CE = 4V, R G = 1Ω; V GE = 15V 1 45 4 E OFF td OFF 35 E ON t R td ON 3 1 25 t F 2 15 1 25 5 75 1 125 Rg (Ω) Fig. 15 - Typ. Energy Loss vs. R G T J = 175 C; L = 2µH; V CE = 4V, I CE = 48A; V GE = 15V 45 1 25 5 75 1 125 R G (Ω) Fig. 16 - Typ. Switching Time vs. R G T J = 175 C; L = 2µH; V CE = 4V, I CE = 48A; V GE = 15V 45 4 35 3 25 R G = 1Ω R G = 22Ω 4 35 3 2 R G = 47Ω 25 15 1 5 R G = 1Ω 2 15 2 4 6 8 1 1 25 5 75 1 125 I F (A) R G (Ω) Fig. 17 - Typ. Diode I RR vs. I F T J = 175 C Fig. 18 - Typ. Diode I RR vs. R G T J = 175 C www.irf.com 5
Capacitance (pf) Energy (µj) Time (µs) I RR (A) Q RR (µc) V GE, Gate-to-Emitter Voltage (V) IRGP463DPbF 45 4 4 35 3 25 2 35 3 25 2 1Ω 96A 47Ω 48A 22Ω 24A 1Ω 15 15 1 2 4 6 8 1 di F /dt (A/µs) Fig. 19 - Typ. Diode I RR vs. di F /dt V CC = 4V; V GE = 15V; I F = 48A; T J = 175 C 1 5 1 15 di F /dt (A/µs) Fig. 2 - Typ. Diode Q RR vs. di F /dt V CC = 4V; V GE = 15V; T J = 175 C 9 18 4 8 7 6 R G = 1Ω R G = 22Ω 16 14 35 3 5 4 R G = 47Ω 12 1 25 2 Current (A) 3 2 1 R G = 1Ω 8 6 15 1 1 2 4 6 8 1 I F (A) Fig. 21 - Typ. Diode E RR vs. I F T J = 175 C 4 5 8 1 12 14 16 18 V GE (V) Fig. 22 - V GE vs. Short Circuit Time V CC = 4V; T C = 25 C 16 Cies 14 12 V CES = 3V V CES = 4V 1 1 1 Coes 8 6 Cres 4 2 1 2 4 6 8 1 25 5 75 1 Q G, Total Gate Charge (nc) Fig. 23 - Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig. 24 - Typical Gate Charge vs. V GE I CE = 48A; L = 6µH 6 www.irf.com
IRGP463DPbF 1 Thermal Response ( Z thjc ).1.1.1 D =.5.2.1.5.2.1 SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri Ri ( C/W) τi (sec).872.114.1599.152.22.233 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 1 t 1, Rectangular Pulse Duration (sec) τ C τ Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 Thermal Response ( Z thjc ) 1.1.1.1 D =.5.2.1.5.2.1 R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri Ri ( C/W) τi (sec).2774.98.3896.3869.254.3195 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 1 t 1, Rectangular Pulse Duration (sec) τ C τ Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7
IRGP463DPbF L 1K L VC C 8 V Rg 48V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / L 4x DC 36V - 5V Rg / DRIVER VCC Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit R = VCC ICM C force 4µH D1 1K C sense Rg VCC G force.75µ E sense E force Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit 8 www.irf.com
IRGP463DPbF 7 14 6 12 6 12 5 1 VCE (V) 5 4 3 2 1-1 tf 9% I CE 5% V CE 5% I CE E OFF Loss -.4.1.6 1.1 Time(µs) 1 8 6 4 2-2 Fig. WF1 - Typ. Turn-off Loss Waveform @ T J = 175 C using Fig. CT.4 VCE (V) 4 3 2 1-1 tr 9% test E ON TEST 1% test 5% V CE 6.2 6.4 6.6 6.8 7. Time (µs) Fig. WF2 - Typ. Turn-on Loss Waveform @ T J = 175 C using Fig. CT.4 8 6 4 2-2 6 6 6 5 4 3 Q RR 5 4 V CE I CE 5 4 IRR(A) 2 1 t RR VCE (V) 3 2 3 2 ICE (A) -1-2 -3 Peak I RR 1% Peak I RR 1 1-4 -.15 -.5.5.15.25 time (µs) Fig. WF3 - Typ. Diode Recovery Waveform @ T J = 175 C using Fig. CT.4-1 -5.. 5. 1. time (µs) Fig. WF4 - Typ. S.C. Waveform @ T J = 25 C using Fig. CT.3-1 www.irf.com 9
IRGP463DPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information @Y6HQG@) UCDTDT6IDSAQ@" XDUC6TT@H7G` GPU8P9@$%$& DIU@SI6UDPI6G Q6SUIVH7@S 6TT@H7G@9PIXX"$! DIUC@6TT@H7G`GDI@C S@8UDAD@S GPBP,5)3( + 96U@8P9@ I r)qv h r iy yv rƒ v v v qvph r GrhqA rr 6TT@H7G` GPU8P9@ `@6S 2! X@@F"$ GDI@C TO-247AC package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) 252-715 TAC Fax: (31) 252-793 Visit us at www.irf.com for sales contact information. 5/6 1 www.irf.com