Final atasheet ugust FFSN7 Integrated N-hannel PowerTrench MOSFET and Schottky iode V,, mω Features Max r S(on) = mω at V GS = V, = Max r S(on) = 7mΩ at V GS =.V, =. V F <.V @ V F <.V @ m Schottky and MOSFET incorporated into single power surface mount SO- package Electrically independent Schottky and MOSFET pinout for design flexibility Low Gate harge (Qg = n) Low Miller harge SO- Pin MOSFET Maximum Ratings T = unless otherwise noted S G General escription The FFSN7 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- package. This device is designed specifically as a single package solution for to converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of / converter topologies. pplications / converters Symbol Parameter Ratings Units V S rain to Source Voltage V V GS Gate to Source Voltage ± V rain urrent -ontinuous (Note a) -Pulsed Power issipation for ual Operation P Power issipation for Single Operation (Note a). V RRM Schottky Repetitive Peak Reverse Voltage V I O Schottky verage Forward urrent (Note a) T J, T STG Operating and Storage Temperature - to S G 7 W tm Thermal haracteristics R θj Thermal Resistance, Junction-to-mbient (Note a) 7 /W R θj Thermal Resistance, Junction-to-ase (Note ) /W Package Marking and Ordering Information evice Marking evice Package Reel Size Tape Width Quantity FFSN7 FFSN7 SO- mm mm units Fairchild Semiconductor orporation
Electrical haracteristics T J = unless otherwise noted Symbol Parameter Test onditions Min Typ Max Units Off haracteristics BV SS rain to Source Breakdown Voltage = µ, V GS = V V BV SS T J SS Breakdown Voltage Temperature oefficient Zero Gate Voltage rain urrent On haracteristics (Note ) = µ, referenced to V S = V V GS = V. mv/ T J = I GSS Gate to Source Leakage urrent V GS = ±V, V S = V ± n V GS(th) Gate to Source Threshold Voltage V S = V GS, = µ.7. V V GS(th) T J r S(on) Gate to Source Threshold Voltage Temperature oefficient rain to Source On Resistance = µ, referenced to -. mv/ V GS = V, = V GS =.V, =. 7 mω V GS = V, =, T J = g FS Forward Transconductance V S = V, = S ynamic haracteristics iss Input apacitance 99 pf V S = V, V GS = V, oss Output apacitance 7 pf f =.MHz rss Reverse Transfer apacitance pf R G Gate Resistance f =.MHz. Ω Switching haracteristics (Note ) t d(on) Turn-On elay Time ns t r Rise Time V = V, = ns t d(off) Turn-Off elay Time V GS = V, R GS = Ω ns t f Fall Time ns Q g(tot) Total Gate harge at V V S = V, n Q g() Total Gate harge at V = n Q gs Gate to Source Gate harge. n Q gd Gate to rain Miller harge n rain-source iode haracteristics and Maximum Ratings V S Source to rain iode Forward Voltage V GS = V, I S =. (Note ).. V t rr Reverse Recovery Time I F =, di/dt = /µs ns Q rr Reverse Recovery harge I F =, di/dt = /µs n Schottky iode haracteristics V R Reverse Breakdown Voltage I R = -m - V T J = o 9 µ I R Reverse Leakage V R = -V T J = o m T J = o I F = m T J = o V F Forward Voltage mv T J = o I F = T J = o 9 µ
Notes: : R θj is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θj is guaranteed by design while R θ is determined by the user s board design. a) 7 /W when mounted on a.in pad of oz copper Scale : on letter size paper : Pulse Test: Pulse Width < µs, uty ycle <.%. b) /W when mounted on a. in pad of oz copper c) /W when mounted on a minimun pad
Typical haracteristics T J = unless otherwise noted, RIN URRENT () NORMLIZE RIN TO SOURE ON-RESISTNE, RIN URRENT () V GS = V V GS = V V GS = V....... Figure...... V GS =.V PULSE URTION = µs UTY YLE =.%MX V GS =.V V GS = V V GS =.V V S, RIN TO SOURE VOLTGE (V)...... On Region haracteristics Figure.. - - 9 Figure. = V GS = V T J, JUNTION TEMPERTURE ( o ) NORMLIZE RIN TO SOURE ON-RESISTNE On Resistance vs Temperature Figure. PULSE URTION = µs UTY YLE =.%MX V S = V T J = o T J = - o T J = o V GS, GTE TO SOURE VOLTGE (V) r S(on), RIN TO IS, REVERSE RIN URRENT () SOURE ON-RESISTNE (mω).... V GS =.V V GS =.V PULSE URTION = µs UTY YLE =.%MX V GS = V V GS =.V V GS = V V GS = V, RIN URRENT() On-Resistance vs rain urrent and Gate Voltage = PULSE URTION = µs UTY YLE =.%MX T J = o T J = o... V GS = V V GS, GTE TO SOURE VOLTGE (V) On-Resistance vs Gate to Source Voltage T J = o T J = o T J = - o E-........ V S, BOY IOE FORWR VOLTGE (V) Figure. Transfer haracteristics Figure. Source to rain iode Forward Voltage vs Source urrent
Typical haracteristics T J = unless otherwise noted VGS, GTE TO SOURE VOLTGE (V) IS, VLNHE URRENT(), RIN URRENT () V = V V = V V = V Q g, GTE HRGE (n) Figure 7. Gate harge haracteristics 9 7 T J = o.. t V, TIME IN VLNHE(ms) Figure 9. Unclamped Inductive Switching apability. OPERTION IN THIS SINGLE PULSE RE MY BE T J = MX RTE. LIMITE BY r S(on) T = O. V S, RIN-SOURE VOLTGE (V) us us ms ms ms s s Figure. Forward Bias Safe Operating rea PITNE (pf) rss oss iss. V S, RIN TO SOURE VOLTGE (V) f = MHz V GS = V Figure. apacitance vs rain to Source Voltage I, RIN URRENT () R θj = o /W V GS =.V V GS = V 7 T, SE TEMPERTURE ( o ) Figure. Maximum ontinuous rain urrent vs ase Temperature ), PEK TRNSIENT POWER (W) P(PK V GS = V SINGLE PULSE T = o FOR TEMPERTURES BOVE o ERTE PEK URRENT S FOLLOWS: T I = I ----------------------- - - - - t, PULSE WITH (s) Figure. Single Pulse Maximum Power issipation
Typical haracteristics T J = unless otherwise noted I F, FORWR LEKGE URRENT () NORMLIZE THERML IMPENE, Z θj.. E-....... V F, FORWR VOLTGE (V) Figure.. T J = o T J = o. E- E- E- Schottky iode Forward Voltage Figure. UTY YLE-ESENING ORER =...... SINGLE PULSE I R, REVERSE LEKGE URRENT (). Figure. Transient Thermal Response urve T J = o T J = o E- V R, REVERSE VOLTGE(V) Schottky iode Reverse urrent. - - - - t, RETNGULR PULSE URTION (s) P M t t NOTES: UTY FTOR: = t /t PEK T J = P M x Z θj x R θj + T
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