Standard Avalanche Sinterglass Diode BYW52 / 53 / 54 / 55 / 56 Features Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC e2 949539 Applications Rectification, general purpose Mechanical Data Case: SOD-57 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-75, Method 226 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 369 mg Parts Table Part Type differentiation Package BYW52 V R = 2 V; I FAV = 2 A SOD-57 BYW53 V R = 4 V; I FAV = 2 A SOD-57 BYW54 V R = 6 V; I FAV = 2 A SOD-57 BYW55 V R = 8 V; I FAV = 2 A SOD-57 BYW56 V R = 1 V; I FAV = 2 A SOD-57 Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Part Symbol Value Unit Reverse voltage = Repetitive see electrical characteristics BYW52 V R = V RRM 2 V peak reverse voltage BYW53 V R = V RRM 4 V BYW54 V R = V RRM 6 V BYW55 V R = V RRM 8 V BYW56 V R = V RRM 1 V Peak forward surge current t p = 1 ms, half sinewave I FSM 5 A Repetitive peak forward current I FRM 12 A Average forward current ϕ = 18 I FAV 2 A Pulse avalanche peak power t p = 2 µs half sine wave, T j = 175 C P R 1 W 1
BYW52 / 53 / 54 / 55 / 56 Parameter Test condition Part Symbol Value Unit Pulse energy in avalanche mode, non repetitive (inductive load switch off) I (BR)R = 1 A, T j = 175 C E R 2 mj i 2 * t-rating i 2 *t 8 A 2 *s Junction and storage T j = T stg - 55 to + 175 C temperature range Maximum Thermal Resistance T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit Junction ambient l = 1 mm, T L = constant R thja 45 K/W on PC board with spacing 25 mm R thja 1 K/W Electrical Characteristics T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 1 A V F.9 1. V Reverse current V R = V RRM I R.1 1 µa V R = V RRM, T j = 1 C I R 5 1 µa Breakdown voltage I R = 1 µa, t p /T =.1, t p =.3 ms V (BR) 16 V Diode capacitance V R = 4 V, f = 1 MHz C D 18 pf Reverse recovery time I F =.5 A, I R = 1 A, i R =.25 A t rr 4 µs I F = 1 A, di/dt = 5 A/µs, V R = 5 V t rr 4 µs Reverse recovery charge I F = 1 A, di/dt = 5 A/µs Q rr 2 nc Typical Characteristics (Tamb = 25 C unless otherwise specified) R thja Therm. Resist. Junction/Ambient (K/W) 94 911 12 1 8 6 4 2 l T L = constant l 5 1 15 2 25 3 l - Lead Length ( mm ) I Forward Current (A) F 1. 1. T j = 175 C T j =25 C.1.1.1..2.4.6.8 1. 1.2 1.4 1.6 1.8 1635 V F Forward Voltage (V) Figure 1. Typ. Thermal Resistance vs. Lead Length Figure 2. Forward Current vs. Forward Voltage 2
BYW52 / 53 / 54 / 55 / 56 I FAV Average Forward Current( A ) 16351 2.5 2. 1.5 1..5 R thja = 1 K/W PCB:d=25mm V R =V RRM half sinewave R thja =45K/W l=1mm. 2 4 6 8 1 12 14 16 18 T amb Ambient Temperature ( C ) Figure 3. Max. Average Forward Current vs. Ambient Temperature P Reverse Power Dissipation ( mw ) R 16353 4 35 3 25 2 15 1 5 V R =V RRM P R Limit @1 % V R P R Limit @8%V R 25 5 75 1 125 15 175 T j Junction Temperature ( C ) Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature I Reverse Current (A) R 1 1 1 V R =V RRM C Diode Capacitance ( pf ) D 4 35 3 25 2 15 1 5 f=1mhz 16352 1 25 5 75 1 125 15 175 T j Junction Temperature ( C ) 16354.1 1. 1. 1. V R Reverse Voltage (V) Figure 4. Reverse Current vs. Junction Temperature Figure 6. Diode Capacitance vs. Reverse Voltage Z thp Thermal Resistance forpulsecond.(k/w) 1 1 1 t p /T =.5 t p /T =.2 t p /T =.1 t p /T =.5 t p /T =.2 t p /T =.1 T amb = 1 C 1 1 5 1 4 1 3 1 2 1 1 1 1 1 1 1 1 1 2 I FRM Repetitive Peak 94 9178 t p Pulse Length (s) Forward Current (A) Figure 7. Thermal Response V RRM = 1 V, R thja = 1K/W T amb =6 C T amb =7 C T amb =25 C T amb =45 C 3
BYW52 / 53 / 54 / 55 / 56 Package Dimensions in mm (Inches) Sintered Glass Case SOD-57 Cathode Identification 3.6 (.14)max. ISO Method E 94 9538.82 (.32) max. 26(1.14) min. 4. (.156) max. 26(1.14) min. 4
Ozone Depleting Substances Policy Statement BYW52 / 53 / 54 / 55 / 56 It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 91/69/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany 5
Notice Legal Disclaimer Notice Vishay Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91 Revision: 8-Apr-5 1