N- and P-Channel 20-V (D-S) MOSFET

Transcription

1 S45DY N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A).45 at V GS = V 9.6 N-Channel.7 at V GS = 4.5 V.6 FEATURES Halogen-free Accordng to IEC Defnton TrenchFET Power MOSFET Complant to RoHS drectve /95/EC P-Channel -.33 at V GS = V at V GS = -.5 V - 5 APPLICATIONS Level Shft Load Swtch SO- S D G 7 D D S S 3 6 D G 4 5 D G Top Vew G Orderng Informaton: S45DY-T-E3 (Lead (Pb)-free) S45DY-T-GE3 (Lead (Pb)-free and Halogen-free) S D ABSOLUTE MAXIMUM RATINGS T A = 5 C, unless otherwse noted N-Channel P-Channel Parameter Symbol s Steady State s Steady State Unt Dran-Source Voltage V DS - V Gate-Source Voltage V GS ± 6 ± Contnuous Dran Current (T J = 5 C) a, b T A = 5 C T A = 7 C A Pulsed Dran Current M 4-4 Contnuous Source Current (Dode Conducton) a I S Maxmum Power Dsspaton a T A = 5 C.. P D W T A = 7 C Operatng Juncton and Storage Temperature Range T J, T stg - 55 to 5 C THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ. Max. Typ. Max. Maxmum Juncton-to-Ambent a t s R thja Steady State 5 9 Maxmum Juncton-to-Foot (Dran) Steady State R thjf Notes: a. Surface Mounted on " x " FR4 board. b. t s. Unt C/W S9-67-Rev. E, -May-9

2 S45DY SPECIFICATIONS T J = 5 C, unless otherwse noted Parameter Symbol Test Condtons Mn. Typ. Max. Unt Statc V DS = V GS, = 5 µa N-Ch.6. Gate Threshold Voltage V GS(th) V DS = V GS, = - 5 µa P-Ch V DS = V, V GS = ± 6 V N-Ch ± Gate-Body Leakage I GSS V DS = V, V GS = ± V P-Ch ± Zero Gate Voltage Dran Current On-State Dran Current b SS (on) V DS = V, V GS = V N-Ch V DS = - V, V GS = V P-Ch - V DS = V, V GS = V, T J = 55 C N-Ch 5 V DS = - V, V GS = V, T J = 55 C P-Ch - 5 V DS = 5 V, V GS = V N-Ch 4 V DS = - 5 V, V GS = V P-Ch - 4 V GS = V, = 9.6 A N-Ch.5.45 V GS = V, = - 6. A Dran-Source On-State Resstance b P-Ch..33 R DS(on) V GS = 4.5 V, =.6 A N-Ch.35.7 V GS = -.5 V, = - 5 A P-Ch.35.5 V DS = 5 V, = 9.6 A Forward Transconductance b N-Ch 33 g fs V DS = - 5 V, = - 6. A P-Ch 7 I S =.7 A, V GS = V Dode Forward Voltag b N-Ch.. V SD I S = -.7 A, V GS = V P-Ch Dynamc a N-Ch.5 Total Gate Charge Q g N-Channel P-Ch 7 V DS = V, V GS = 4.5 V, = 9.6 A N-Ch 3.7 Gate-Source Charge Q gs P-Channel P-Ch 4. Gate-Dran Charge Q gd V DS = - V, V GS = V, = - 6. A N-Ch 3.3 P-Ch 4.3 N-Ch Turn-On Delay Tme t d(on) N-Channel P-Ch 5 4 V DD = V, R L = Ω N-Ch Rse Tme t r A, V GEN = V, R g = 6 Ω P-Ch 3 45 Turn-Off Delay Tme t d(off) P-Channel V DD = - V, R L = Ω N-Ch P-Ch Fall Tme t f - A, V GEN = V, R g = 6 Ω N-Ch 5 5 P-Ch 5 75 I F =.7 A, di/dt = A/µs N-Ch 5 Source-Dran Reverse Recovery Tme t rr I F = -.7 A, di/dt = A/µs P-Ch 4 Notes: a. Guaranteed by desgn, not subject to producton testng. b. Pulse test; pulse wdth 3 µs, duty cycle %. Stresses beyond those lsted under Absolute Maxmum Ratngs may cause permanent damage to the devce. These are stress ratngs only, and functonal operaton of the devce at these or any other condtons beyond those ndcated n the operatonal sectons of the specfcatons s not mpled. Exposure to absolute maxmum ratng condtons for extended perods may affect devce relablty. V na µa A Ω S V nc ns S9-67-Rev. E, -May-9

3 t t l t t S45DY N-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwse noted 4 4 V GS = V thru 4 V 3 V Dran Current (A ) D r a n C u r r e n t ( A ) 4 6 T C = 5 C V V DS - Dran-to-Source Voltage (V) Output Characterstcs 5 C - 55 C V GS - Gate-to-Source Voltage (V) Transfer Characterstcs. RDS(on) - On-Resstance ( Ω ).5..5 V GS = 4.5 V V GS = V C- C a p a a n c e ( p F ) c 6 4 C rss C oss C ss Dran Current (A) On-Resstance vs. Dran Current 4 6 V DS - Dran-to-Source Voltage (V) Capactance.6 - G a e - o - S o u r c e V o a g e ( V ) 6 4 V DS = V = 9.6 A R D S(on ) - On-Re sstance (Normalzed).4.. V GS = V = 9.6 A V G S Q g - Total Gate Charge (nc) Gate Charge T J - Juncton Temperature ( C) On-Resstance vs. Juncton Temperature S9-67-Rev. E, -May-9 3

4 S45DY N-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwse noted 4 IS - S o u r c e C u r r e n t ( A ) T J = 5 C T J = 5 C V SD - Source-to-Dran Voltage (V) Source-Dran Dode Forward Voltage.4. = 5 µa e ( V ). n c ( t.5 D ) - On-Resstance ( R S(on ) = 3 A = 9.6 A V GS - Gate-to-Source Voltage (V) On-Resstance vs. Gate-to-Source Voltage 3 5 a V a r -. V G S h ) -.4 ) W ( w e r o 5 P T J - Temperature ( C) Threshold Voltage Tme (s) Sngle Pulse Power Lmted by R DS(on) * M Lmted - Dran Current (A).. (on) Lmted P(t) = T C = 5 C Sngle Pulse P(t) = BVDSS Lmted. Safe Operatng Area P(t) =. P(t) =. P(t) =. P(t) =. DC V DS - Dran-to-Source Voltage (V) * V DS > mnmum V GS at whch R DS(on) s specfed 4 S9-67-Rev. E, -May-9

5 l f f t f f t l S45DY N-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwse noted N o r m a z e d E e c v e T r a n s e n t T h e r m a l I m p e d a n c e Duty Cycle =.5. Notes:.. P DM.5 t t t.. Duty Cycle, D = t. Per Unt Base = R thja = 5 C Sngle Pulse 3. T JM T A = P DM Z (t) thja 4. Surface Mounted Square Wave Pulse Duraton (s) Normalzed Thermal Transent Impedance, Juncton-to-Ambent N o r m a z e d E e c v e T r a n s e n t T e r m a l I m p e d a n c e h. Duty Cycle = Sngle Pulse -3 - Square Wave Pulse Duraton (s) Normalzed Thermal Transent Impedance, Juncton-to-Foot - S9-67-Rev. E, -May-9 5

6 t l S45DY P-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwse noted 4 V GS = 5 V thru 3.5 V 3 V 4 T C = - 55 C C - Dran Current (A ) V V - D a n C u r r t ( A ) n e r C.5 V V DS - Dran-to-Source Voltage (V) Output Characterstcs V GS - Gate-to-Source Voltage (V) Transfer Characterstcs 3 - On-Resstance (Ω) R DS(on ) V GS =.5 V V GS = 4.5 V C- C a p a c a n c e ( p F ) C oss C ss Dran Current (A) On-Resstance vs. Dran Current C rss 4 6 V DS - Dran-to-Source Voltage (V) Capactance Gate-to-Source Voltage (V ) 4 3 V DS = V = 6. A On-Resstance - R DS(on ) ) d e z a m r o N (.4.. V GS = 4.5 V = 6. A V G S Q g - Total Gate Charge (nc) Gate Charge T J - Juncton Temperature ( C) On-Resstance vs. Juncton Temperature 6 S9-67-Rev. E, -May-9

7 S45DY P-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwse noted 4 I S - S o u r c e C u r r e n t ( A ) T J = 5 C T J = 5 C V SD - Source-to-Dran Voltage (V) Source-Dran Dode Forward Voltage.6.4 n c e ( V ) a. Ω) - On-Resstance ( R DS(on ) = 6. A VGS- Gate-to-Source Voltage (V) On-Resstance vs. Gate-to-Source Voltage 3 5. = 5 µa W ) V GS(th) V a r ( P o w e r T J - Temperature ( C) Threshold Voltage Tme (s) Sngle Pulse Power Lmted by R DS(on) * M Lmted - Dran Current (A).. (on) Lmted T C = 5 C P(t) = Sngle Pulse P(t) = BVDSS Lmted P(t) =. P(t) =. P(t) =. DC. V DS - Dran-to-Source Voltage (V) * V DS > mnmum V GS at whch R DS(on) s specfed Safe Operatng Area S9-67-Rev. E, -May-9 7

8 l f f t l f f t S45DY P-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwse noted N o r m a z e d E c v e T r a n s e n t T h e r m a l I m p e d a n c e e Duty Cycle =.5. Notes:.. P DM.5 t t t.. Duty Cycle, D = t. Per Unt Base = R thja = 5 C 3. T JM T A = P DM Z (t) thja Sngle Pulse 4. Surface Mounted Square Wave Pulse Duraton (s) Normalzed Thermal Transent Impedance, Juncton-to-Ambent N o r m a z e d E e c v e T r a n s e n t T h e r m a l I m p e d a n c e. Duty Cycle = Sngle Pulse Square Wave Pulse Duraton (s) Normalzed Thermal Transent Impedance, Juncton-to-Foot - mantans worldwde manufacturng capablty. Products may be manufactured at one of several qualfed locatons. Relablty data for Slcon Technology and Package Relablty represent a composte of all qualfed locatons. For related documents such as package/tape drawngs, part markng, and relablty data, see S9-67-Rev. E, -May-9

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