Radiation Tolerant Sensors for Solid State Tracking Detectors. - CERN-RD50 project
|
|
- Garry Lamb
- 5 years ago
- Views:
Transcription
1 EPFL LPHE, Lausanne, January 29, 27 Radiation Tolerant Sensors for Solid State Tracking Detectors - CERN-RD5 project Michael Moll CERN - Geneva - Switzerland
2 Outline Introduction: LHC and LHC experiment Motivation to develop radiation harder detectors Introduction to the RD5 collaboration Part I: Radiation Damage in Silicon Detectors (A very brief review) Microscopic defects (changes in bulk material) Macroscopic damage (changes in detector properties) Part II: RD5 - Approaches to obtain radiation hard sensors Material Engineering Device Engineering Summary and preliminary conclusion Michael Moll Lausanne, 29. January 27-2-
3 LHC - Large Hadron Collider Start : 27 Installation in existing LEP tunnel 27 Km ring p p 1232 dipoles B=8.3T 4 MCHF (machine+experiments) pp s = 14 TeV L design = 1 34 cm -2 s -1 Heavy ions (e.g. Pb-Pb at s ~ 1 TeV) LHC experiments located at 4 interaction points Michael Moll Lausanne, 29. January 27-3-
4 LHC Experiments + LHCf CMS Michael Moll Lausanne, 29. January 27-4-
5 LHC Experiments LHCf CMS Michael Moll Lausanne, 29. January 27-5-
6 RD5 LHC example: CMS inner tracker Inner Tracker CMS Outer Barrel Inner Barrel Inner Disks (TOB) End Cap (TIB) (TEC) 2.4 m (TID) Total weight 125 t Diameter 15m Length 21.6m Magnetic field 4T CMS Currently the Most Silicon Micro Strip: 5.4 m Pixel Pixel Detector ~ 214 m2 of silicon strip sensors, 11.4 million strips Pixel: Inner 3 layers: silicon pixels (~ 1m2) 66 million pixels (1x15µm) Precision: σ(rφ) ~ σ(z) ~ 15µm Most challenging operating environments (LHC) cm 3 93 c m Michael Moll Lausanne, 29. January 27-6-
7 Status December 26 LHC Silicon Trackers close to or under commissioning CMS Tracker (12/26) (foreseen: June 27 into the pit) ATLAS Silicon Tracker (8/26) August 26 installed in ATLAS CMS Tracker Outer Barrel Michael Moll Lausanne, 29. January 27-7-
8 Motivation for R&D on Radiation Tolerant Detectors: Super - LHC LHC upgrade LHC (27), L = 1 34 cm -2 s -1 1 years φ(r=4cm) ~ cm -2 5 fb -1 5 Super-LHC (215?), L = 1 35 cm -2 s -1 5 years 25 fb -1 φ(r=4cm) ~ cm -2 LHC (Replacement of components) e.g. - LHCb Velo detectors (~21) - ATLAS Pixel B-layer (~212) r [cm] Linear collider experiments (generic R&D) Deep understanding of radiation damage will be fruitful for linear collider experiments where high doses of e, γ will play a significant role. Φ eq [cm -2 ] SUPER - LHC (5 years, 25 fb -1 ) Pixel (?) Ministrip (?) ATLAS Pixel Macropixel (?) total fluence Φ eq ATLAS SCT - barrel (microstrip detectors) neutrons Φ eq pions Φ eq [M.Moll, simplified, scaled from ATLAS TDR] other charged hadrons Φ eq Michael Moll Lausanne, 29. January 27-8-
9 The CERN RD5 Collaboration RD5: Development of Radiation Hard Semiconductor Devices for High Luminosity Colliders Collaboration formed in November 21 Experiment approved as RD5 by CERN in June 22 Main objective: Development of ultra-radiation hard semiconductor detectors for the luminosity upgrade of the LHC to 1 35 cm -2 s -1 ( Super-LHC ). Challenges: - Radiation hardness up to 1 16 cm -2 required - Fast signal collection (Going from 25ns to 1 ns bunch crossing?) - Low mass (reducing multiple scattering close to interaction point) - Cost effectiveness (big surfaces have to be covered with detectors!) Presently 264 members from 52 institutes Belarus (Minsk), Belgium (Louvain), Canada (Montreal), Czech Republic (Prague (3x)), Finland (Helsinki, Lappeenranta), Germany (Berlin, Dortmund, Erfurt, Freiburg, Hamburg, Karlsruhe), Israel (Tel Aviv), Italy (Bari, Bologna, Florence, Padova, Perugia, Pisa, Trento, Turin), Lithuania (Vilnius), The Netherlands (Amsterdam), Norway (Oslo (2x)), Poland (Warsaw (2x)), Romania (Bucharest (2x)), Russia (Moscow), St.Petersburg), Slovenia (Ljubljana), Spain (Barcelona, Valencia), Switzerland (CERN, PSI), Ukraine (Kiev), United Kingdom (Diamond, Exeter, Glasgow, Lancaster, Liverpool, Sheffield), USA (Fermilab, Purdue University, Rochester University, SCIPP Santa Cruz, Syracuse University, BNL, University of New Mexico) Michael Moll Lausanne, 29. January 27-9-
10 Outline Motivation to develop radiation harder detectors Introduction to the RD5 collaboration Part I: Radiation Damage in Silicon Detectors (A very brief review) Microscopic defects (changes in bulk material) Macroscopic damage (changes in detector properties) Part II: RD5 - Approaches to obtain radiation hard sensors Material Engineering Device Engineering Summary and preliminary conclusion Michael Moll Lausanne, 29. January 27-1-
11 Radiation Damage Microscopic Effects Spatial distribution of vacancies created by a 5 kev Si-ion in silicon. (typical recoil energy for 1 MeV neutrons) van Lint 198 M.Huhtinen 21 V I V I particl e Si S E K >25 ev V I Vacancy + Interstitial point defects (V-O, C-O,.. ) E K > 5 kev point defects and clusters of defects Michael Moll Lausanne, 29. January
12 Radiation Damage Microscopic Effects particl e Si S E K >25 ev V I Vacancy + Interstitial point defects (V-O, C-O,.. ) E K > 5 kev point defects and clusters of defects 6 Co-gammas Electrons Compton Electrons E e > 255 kev for displacement with max. E γ 1 MeV E (no cluster production) e > 8 MeV for cluster Only point defects point defects & clusters Neutrons (elastic scattering) E n > 185 ev for displacement E n > 35 kev for cluster Mainly clusters Simulation: Initial distribution of vacancies in (1µm) 3 after 1 14 particles/cm 2 [Mika Huhtinen NIMA 491(22) 194] 1 MeV protons 24 GeV/c protons 1 MeV neutrons Michael Moll Lausanne, 29. January
13 Primary Damage and secondary defect formation Two basic defects I - Silicon Interstitial V - Vacancy Primary defect generation I, I 2 higher order I (?) I -CLUSTER (?) V, V 2, higher order V (?) V -CLUSTER (?) Damage?! V I I Secondary defect generation V Main impurities in silicon: Carbon (C s ) Oxygen (O i ) I+C s C i C i +C s C i C S C i +O i C i O i C i +P s C i P S V+V V 2 V+V 2 V 3 V+O i VO i V+VO i V 2 O i V+P s VP s Damage?! ( V 2 O-model ) I+V 2 V I+VO i O i... Michael Moll Lausanne, 29. January
14 DLTS-signal (b1) [pf] (-/) C i Example of defect spectroscopy 6 min 17 days (-/) C i C s - neutron irradiated - Deep Level Transient Spectroscopy E(35K) E(4K) E(45K) (-/) VO i VV (--/-) (+/) C i (+/) C i O i H(22K) Temperature [ K ] Introduction rates of main defects 1 cm -1 Introduction rate of negative space charge.5 cm -1? + VV (-/) +? Introduction Rates N t /Φ eq : C i : 1.55 cm -1 C i C s : C i O i :.4 cm cm -1 example : Φ eq = cm -2 defects cm -3 space charge cm -3 Michael Moll Lausanne, 29. January
15 Impact of Defects on Detector properties Shockley-Read Read-Hall statistics (standard theory) Inter-center charge transfer model (inside clusters only) charged defects N eff, V dep e.g. donors in upper and acceptors in lower half of band gap Trapping (e and h) CCE shallow defects do not contribute at room temperature due to fast detrapping generation leakage current Levels close to midgap most effective enhanced generation leakage current space charge Impact on detector properties can be calculated if all defect parameters are known: σ n,p : cross sections E E : ionization energy N t : concentration Michael Moll Lausanne, 29. January
16 Reverse biased abrupt p + -n n junction Poisson s equation 2 d q φ x = N 2 dx εε ( ) eff Electrical charge density depleted zone Positive space charge, N eff =[P] (ionized Phosphorus atoms) neutral bulk (no electric field) particle (mip) +V B<Vdep +V B>V dep Electrical field strength Full charge collection only for V B >V dep! depletion voltage Electron potential energy V dep q = εε 2 Neff d effective space charge density Michael Moll Lausanne, 29. January
17 Macroscopic Effects I. Depletion Voltage U dep [V] (d = 3µm) Change of Depletion Voltage V dep (N eff ) with particle fluence: n-type type inversion "p-type" 1 14 cm -2 6 V [M.Moll: Data: R. Wunstorf, PhD thesis 1992, Uni Hamburg] Φ eq [ 1 12 cm -2 ] N eff [ 1 11 cm -3 ] N eff [1 11 cm -3 ] with time (annealing): N A g C Φ eq [M.Moll, PhD thesis 1999, Uni Hamburg] annealing time at 6 o C [min] N C N Y N C Type inversion : N eff changes from positive to negative (Space Charge Sign Inversion) before inversion p + n + p + n + after inversion Short term: Beneficial annealing Long term: Reverse annealing - time constant depends on temperature: ~ 5 years (-1 C) ~ 5 days ( 2 C) ~ 21 hours ( 6 C) - Consequence: Detectors must be cooled even when the experiment is not running! Michael Moll Lausanne, 29. January
18 Radiation Damage II. Leakage Current I / V [A/cm 3 ] Change of Leakage Current (after hadron irradiation) n-type FZ - 7 to 25 KΩcm n-type FZ - 7 KΩcm n-type FZ - 4 KΩcm n-type FZ - 3 KΩcm p-type EPI - 2 and 4 KΩcm Φ eq [cm -2 ] n-type FZ - 78 Ωcm n-type FZ - 41 Ωcm n-type FZ - 13 Ωcm n-type FZ - 11 Ωcm n-type CZ - 14 Ωcm p-type EPI - 38 Ωcm [M.Moll PhD Thesis] Damage parameter α (slope in figure) α =. with particle fluence: V I Φ 8 min 6 C eq Leakage current per unit volume and particle fluence α is constant over several orders of fluence and independent of impurity concentration in Si can be used for fluence measurement α(t) [1-17 A/cm] with time (annealing): oxygen enriched silicon [O] = cm -3 parameterisation for standard silicon annealing time at 6 o C [minutes] Leakage current decreasing in time (depending on temperature) Strong temperature dependence E I exp g 2 8 min 6 C [M.Moll PhD Thesis] Consequence: Cool detectors during operation! Example: I(-1 C) ~1/16 I(2 C) k B T Michael Moll Lausanne, 29. January
19 Radiation Damage III. CCE (Trapping) Deterioration of Charge Collection Efficiency (CCE) by trapping Trapping is characterized by an effective trapping time τ eff for electrons and holes: Q e, h ( t) 1 = Q exp t e, h τ eff e, h where 1 τ eff e, h N defects Increase of inverse trapping time (1/τ) with fluence.. and change with time (annealing): Inverse trapping time 1/τ [ns -1 ] GeV/c proton irradiation data for electrons data for holes [M.Moll; Data: O.Krasel, PhD thesis 24, Uni Dortmund] particle fluence - Φ eq [cm -2 ] Inverse trapping time 1/τ [ns -1 ] GeV/c proton irradiation Φ eq = cm -2 data for holes data for electrons [M.Moll; Data: O.Krasel, PhD thesis 24, Uni Dortmund] annealing time at 6 o C [min] Michael Moll Lausanne, 29. January
20 Summary: Radiation Damage in Silicon Sensors Influenced by impurities in Si Defect Engineering is possible! Same for all tested Silicon materials! Two general types of radiation damage to the detector materials: Bulk (Crystal) damage due to Non Ionizing Energy Loss (NIEL) - displacement damage, built up of crystal defects I. Change of effective doping concentration (higher depletion voltage, under- depletion) II. Increase of leakage current (increase of shot noise, thermal runaway) III. Increase of charge carrier trapping (loss of charge) Surface damage due to Ionizing Energy Loss (IEL) - accumulation of positive in the oxide (SiO 2 ) and the Si/SiO 2 interface affects: interstrip capacitance (noise factor), breakdown behavior, Impact on detector performance and Charge Collection Efficiency (depending on detector type and geometry and readout electronics!) Signal/noise ratio is the quantity to watch Sensors can fail from radiation damage! Can be optimized! Michael Moll Lausanne, 29. January 27-2-
21 Outline Motivation to develop radiation harder detectors Introduction to the RD5 collaboration Part I: Radiation Damage in Silicon Detectors (A very brief review) Microscopic defects (changes in bulk material) Macroscopic damage (changes in detector properties) Part II: RD5 - Approaches to obtain radiation hard sensors Material Engineering Device Engineering Summary and preliminary conclusion Michael Moll Lausanne, 29. January
22 Scientific strategies: I. Material engineering II. III. Device engineering Variation of detector operational conditions CERN-RD39 Cryogenic Tracking Detectors Approaches of RD5 to develop radiation harder tracking detectors Defect Engineering of Silicon Understanding radiation damage Macroscopic effects and Microscopic defects Simulation of defect properties and defect kinetics Irradiation with different particles at different energies Oxygen rich silicon DOFZ, Cz, MCZ, EPI Oxygen dimer enriched silicon Hydrogen enriched silicon Pre-irradiated silicon Influence of processing technology New Materials Silicon Carbide (SiC), Gallium Nitride (GaN) Diamond: CERN RD42 Collaboration Device Engineering (New Detector Designs) p-type silicon detectors (n-in-p) Thin detectors 3D and Semi 3D detectors Cost effective detectors Simulation of highly irradiated detectors Michael Moll Lausanne, 29. January
23 Defect Engineering of Silicon Influence the defect kinetics by incorporation of impurities or defects Best example: Oxygen Initial idea: Incorporate Oxygen to getter radiation-induced vacancies prevent formation of Di-vacancy (V 2 ) related deep acceptor levels Observation: Higher oxygen content less negative space charge (less charged acceptors) One possible mechanism: V 2 O is a deep acceptor V O VO (not harmful at room temperature) VO V 2 O (negative space charge) V 2 O(?) E c VO V 2 in clusters E V Michael Moll Lausanne, 29. January
24 Spectacular Improvement of γ-irradiation tolerance V dep [V] Depletion Voltage CA: <111> STFZ CB: <111> DOFZ 24 h CC: <111>DOFZ 48 h CD: <111> DOFZ 72 h CE: <1> STFZ CF: <1> DOFZ 24h CG: <1> DOFZ 48h CH: <1> DOFZ 72h (a) dose [Mrad] No type inversion for oxygen enriched silicon! Slight increase of positive space charge (due to Thermal Donor generation?) Leakage increase not linear and depending on oxygen concentration N eff [1 11 cm -3 ] I rev [na] Leakage Current CA: <111> STFZ CB: <111> DOFZ 24h CC: <111> DOFZ 48h CD: <111> DOFZ 78h CE: <1> STFZ CF: <1> DOFZ 24h CG: <1> DOFZ 48h CH: <1> DOFZ 72h (b) (b) dose [Mrad] [E.Fretwurst et al. 1 st RD5 Workshop] See also: - Z.Li et al. [NIMA461(21)126] - Z.Li et al. [1 st RD5 Workshop] Michael Moll Lausanne, 29. January
25 Characterization of microscopic defects - γ and proton irradiated silicon detectors - 23: Major breakthrough on γ-irradiated samples For the first time macroscopic changes of the depletion voltage and leakage current can be explained by electrical properties of measured defects! [APL, 82, 2169, March 23] since 24: Big steps in understanding the improved radiation tolerance of oxygen enriched and epitaxial silicon after proton irradiation Levels responsible for depletion voltage changes after proton irradiation: Almost independent of oxygen content: Donor removal Cluster damage negative charge Influenced by initial oxygen content: I defect: deep acceptor level at E C -.54eV (good candidate for the V 2 O defect) negative charge [I.Pintilie, RESMDD, Oct.24] Influenced by initial oxygen dimer content (?): BD-defect: bistable shallow thermal donor (formed via oxygen dimers O 2i ) positive charge ΒD-defect I-defect Michael Moll Lausanne, 29. January
26 Oxygen enriched silicon DOFZ - proton irradiation - DOFZ (Diffusion Oxygenated Float Zone Silicon) 1982 First oxygen diffusion tests on FZ [Brotherton et al. J.Appl.Phys.,Vol.53, No.8.,572] 1995 First tests on detector grade silicon [Z.Li et al. IEEE TNS Vol.42,No.4,219] 1999 Introduced to the HEP community by RD48 (ROSE) N eff [1 12 cm -3 ] First tests in 1999 show clear advantage of oxygenation Carbon-enriched (P53) Standard (P51) O-diffusion 24 hours (P52) O-diffusion 48 hours (P54) O-diffusion 72 hours (P56) Carbonated Standard Φ 24 GeV/c proton [1 14 cm -2 ] [RD48-NIMA 465(21) 6] Oxygenated V dep [V] (3 µm) N eff [1 12 cm -3 ] ROSE RD48 Later systematic tests reveal strong variations with no clear dependence on oxygen content 15 KΩ cm <111> - standard 15 KΩ cm <111> - oxygenated [M.Moll - NIMA 511 (23) 97] Φ 24GeV/c proton [1 14 cm -2 ] However, only non-oxygenated diodes show a bad behavior V dep [V] (3 µm) Michael Moll Lausanne, 29. January
27 Silicon Growth Processes Floating Zone Silicon (FZ) Poly silicon Czochralski Silicon (CZ) The growth method used by the IC industry. Difficult to produce very high resistivity RF Heating coil Single crystal silicon Czochralski Growth Float Zone Growth Basically all silicon detectors made out of high resistivety FZ silicon Epitaxial Silicon (EPI) Chemical-Vapor Deposition (CVD) of Si up to 15 µm thick layers produced growth rate about 1µm/min Michael Moll Lausanne, 29. January
28 Oxygen concentration in FZ, CZ and EPI O-concentration [cm -3 ] DOFZ and CZ silicon DOFZ: inhomogeneous oxygen distribution DOFZ: oxygen content increasing with time at high temperature DOFZ 72h/115 o C DOFZ 48h/115 o C DOFZ 24h/115 o C Cz as grown depth [µm] Data: G.Lindstroem et al. [M.Moll] CZ: high O i (oxygen) and O 2i (oxygen dimer) concentration (homogeneous) CZ: formation of Thermal Donors possible! 5 O-concentration [1/cm 3 ] Epitaxial silicon EPI layer 25 mu CZ substrate 5 mu 75 mu SIMS 25 µm SIMS 5 µm SIMS 75 µm simulation 25 µm simulation 5 µm simulation 75µm [G.Lindström et al.,1 th European Symposium on Semiconductor Detectors, June 25] Depth [µm] EPI: O i and O 2i (?) diffusion from substrate into epi-layer during production EPI: in-homogeneous oxygen distribution Michael Moll Lausanne, 29. January
29 standard for particle detectors Silicon Materials under Investigation by RD5 Material Symbol ρ (Ωcm) [O i ] (cm -3 ) Standard FZ (n- and p-type) FZ < Diffusion oxygenated FZ (n- and p-type) DOFZ ~ used for LHC Pixel detectors new material Magnetic Czochralski Si, Okmetic, Finland (n- and p-type) MCz ~ ~ Czochralski Si, Sumitomo, Japan (n-type) Cz ~ ~ Epitaxial layers on Cz-substrates, ITME, Poland (n- and p-type, 25, 5, 75, 15 µm thick) EPI 5 4 < Diffusion oxygenated Epitaxial layers on CZ EPI DO 5 1 ~ DOFZ silicon CZ/MCZ silicon Epi silicon Epi-Do silicon - Enriched with oxygen on wafer level, inhomogeneous distribution of oxygen - high Oi (oxygen) and O 2i (oxygen dimer) concentration (homogeneous) - formation of shallow Thermal Donors possible -high O i, O 2i content due to out-diffusion from the CZ substrate (inhomogeneous) - thin layers: high doping possible (low starting resistivity) - as EPI, however additional O i diffused reaching homogeneous O i content Michael Moll Lausanne, 29. January
30 Standard FZ, DOFZ, Cz and MCz Silicon 24 GeV/c proton irradiation Standard FZ silicon type inversion at ~ p/cm 2 strong N eff increase at high fluence Oxygenated FZ (DOFZ) type inversion at ~ p/cm 2 reduced N eff increase at high fluence CZ silicon and MCZ silicon V dep (3µm) [V] proton fluence [1 14 cm -2 ] no type inversion in the overall fluence range (verified by TCT measurements) (verified for CZ silicon by TCT measurements, preliminary result for MCZ silicon) donor generation overcompensates acceptor generation in high fluence range FZ <111> DOFZ <111> (72 h 115 C) MCZ <1> CZ <1> (TD killed) N eff [1 12 cm -3 ] Common to all materials (after hadron irradiation): reverse current increase increase of trapping (electrons and holes) within ~ 2% Michael Moll Lausanne, 29. January 27-3-
31 N eff (t ) [cm -3 ] Epitaxial silicon EPI Devices Irradiation experiments Layer thickness: 25, 5, 75 µm (resistivity: ~ 5 Ωcm); 15 µm (resistivity: ~ 4 Ωcm) Oxygen: [O] cm -3 ; Oxygen dimers (detected via IO 2 -defect formation) 25 µm, 8 o C 5 µm, 8 o C 75 µm, 8 o C 23 GeV protons Φ eq [cm -2 ] Only little change in depletion voltage 15V (25µm) 23V (5µm) 32V (75µm) No type inversion up to ~ 1 16 p/cm 2 and ~ 1 16 n/cm 2 high electric field will stay at front electrode! reverse annealing will decreases depletion voltage! Explanation: introduction of shallow donors is bigger than generation of deep acceptors G.Lindström et al.,1 th European Symposium on Semiconductor Detectors, June 25 G.Kramberger et al., Hamburg RD5 Workshop, August 26 Signal [e] µm - neutron irradiated 75 µm - proton irradiated 75 µm - neutron irradiated 5 µm - neutron irradiated 5 µm - proton irradiated [Data: G.Kramberger et al., Hamburg RD5 Workshop, August 26] [M.Moll] Φ eq [1 14 cm -2 ] CCE (Sr 9 source, 25ns shaping): 64 e (15 µm; 2x1 15 n/cm -2 ) 33 e (75µm; 8x1 15 n/cm -2 ) 23 e (5µm; 8x1 15 n/cm -2 ) Michael Moll Lausanne, 29. January
32 Advantage of non-inverting material p-in-n detectors (schematic figures!) Fully depleted detector (non irradiated): Michael Moll Lausanne, 29. January
33 Be careful, this is a very schematic explanation, reality is more complex! Advantage of non-inverting material p-in-n detectors (schematic figures!) Fully depleted detector (non irradiated): heavy irradiation inverted non inverted inverted to p-type, under-depleted: Charge spread degraded resolution Charge loss reduced CCE non-inverted, under-depleted: Limited loss in CCE Less degradation with under-depletion Michael Moll Lausanne, 29. January
34 Epitaxial silicon - Annealing 5 µm thick silicon detectors: - Epitaxial silicon (5Ωcm on CZ substrate, ITME & CiS) - Thin FZ silicon (4KΩcm, MPI Munich, wafer bonding technique) V dep [V] T a =8 o C t a =8 min EPI (ITME), 5µm FZ (MPI), 5µm proton fluence [1 14 cm -2 ] N eff [1 14 cm -3 ] V fd [V] [E.Fretwurst et al.,resmdd - October 24] EPI (ITME), p/cm 2 FZ (MPI), p/cm 2 T a =8 o C [E.Fretwurst et al., Hamburg] annealing time [min] Thin FZ silicon: Type inverted, increase of depletion voltage with time Epitaxial silicon: No type inversion, decrease of depletion voltage with time No need for low temperature during maintenance of SLHC detectors! Michael Moll Lausanne, 29. January
35 New Materials: Epitaxial SiC A material between Silicon and Diamond Property Diamond GaN 4H SiC Si E g [ev] E breakdown [V/cm] µ e [cm 2 /Vs] µ h [cm 2 /Vs] v sat [cm/s] Z 6 31/7 14/6 14 ε r e-h energy [ev] Density [g/cm3] Displacem. [ev] Wide bandgap (3.3eV) lower leakage current than silicon Signal: Diamond 36 e/µm SiC 51 e/µm Si 89 e/µm more charge than diamond R&D on diamond detectors: RD42 Collaboration Higher displacement threshold than silicon radiation harder than silicon (?) Michael Moll Lausanne, 29. January
36 SiC: CCE after neutron irradiation CCE before irradiation 1 % with α particles and MIPS CCE after irradiation (example) material produced by CREE 55 µm thick layer neutron irradiated samples tested with β particles Conclusion: SiC is less radiation tolerant than expected Collected Charge ( e - ) Before 95 V.1 1E14 1E15 1E16 Fluence ((1MeV) n/cm 2 ) Consequence: RD5 will stop working on this topic [F.Moscatelli, Bologna, December 26] Michael Moll Lausanne, 29. January
37 Outline Motivation to develop radiation harder detectors Introduction to the RD5 collaboration Part I: Radiation Damage in Silicon Detectors (A very brief review) Microscopic defects (changes in bulk material) Macroscopic damage (changes in detector properties) Part II: RD5 - Approaches to obtain radiation hard sensors Material Engineering Device Engineering Summary and preliminary conclusion Michael Moll Lausanne, 29. January
38 Device engineering p-in-n versus n-in-p detectors n-type silicon after high fluences: p-type silicon after high fluences: p + on-n n + on-p p-on-n silicon, under-depleted: Charge spread degraded resolution Charge loss reduced CCE Be careful, this is a very schematic explanation, reality is more complex! n-on-p silicon, under-depleted: Limited loss in CCE Less degradation with under-depletion Collect electrons (fast) Michael Moll Lausanne, 29. January
39 n-in-p microstrip detectors CCE (1 3 electrons) n-in-p: - no type inversion, high electric field stays on structured side - collection of electrons n-in-p microstrip detectors (28µm) on p-type FZ silicon Detectors read-out with 4MHz GeV/c p irradiation CCE ~ 65 e (3%) 15 1 after p cm -2 at 9V [Data: G.Casse et al., NIMA535(24) 362] [M.Moll] fluence [1 15 cm -2 ] CCE (1 3 electrons) time [days at 2 o C] x 1 15 cm x 1 15 cm -2 (5 V) 8 V 5 V 7.5 x 1 15 cm -2 (7 V) [Data: G.Casse et al., to be published in NIMA] M.Moll time at 8 o C[min] no reverse annealing visible in the CCE measurement! e.g. for p/cm 2 increase of V dep from V dep ~ 28V to V dep > 12V is expected! Michael Moll Lausanne, 29. January
40 3D detector - concepts Introduced by: S.I. Parker et al., NIMA 395 (1997) 328 3D electrodes: - narrow columns along detector thickness, - diameter: 1µm, distance: 5-1µm Lateral depletion:- lower depletion voltage needed - thicker detectors possible - fast signal - radiation hard 3D p + 5 µm n + 3 µm PLANAR p + p n-columns p-columns wafer surface n-type substrate Michael Moll Lausanne, 29. January 27-4-
41 3D detector - concepts 3D electrodes: - narrow columns along detector thickness, - diameter: 1µm, distance: 5-1µm Lateral depletion:- lower depletion voltage needed - thicker detectors possible - fast signal - radiation hard n-columns p-columns wafer surface n-type substrate Simplified 3D architecture n + columns in p-type substrate, p + backplane operation similar to standard 3D detector Simulations performed Fabrication: IRST(Italy), CNM Barcelona hole metal strip [C. Piemonte et al., NIM A541 (25) 441] hole Simplified process hole etching and doping only done once no wafer bonding technology needed Hole depth 12-15µm Hole diameter ~1µm C.Piemonte et al., STD6, September 26 First CCE tests under way Michael Moll Lausanne, 29. January
42 Comparison of measured collected charge on different radiation-hard materials and devices In the following: Comparison of collected charge as published in literature Be careful: Values obtained partly under different conditions irradiation temperature of measurement electronics used (shaping time, noise) type of device strip detectors or pad detectors This comparison gives only an indication of which material/technology could be used, to be more specific, the exact application should be looked at! Remember: The obtained signal has still to be compared to the noise Acknowledgements: Recent data collections: Mara Bruzzi (Hiroschima conference 26) Cinzia Da Via (Vertex conference 26) Michael Moll Lausanne, 29. January
43 4 Comparison of measured collected charge on different radiation-hard materials and devices SiC, n-type, 55 µm, (RT, 2.5µs) [Moscatelli et al. 26] signal [electrons] sample: irradiation: measurement: analysis: 4H-SiC layer, 55µm, pad detector 24 GeV/c protons Sr-9 source, 2.5 µs shaping, room temperature mean values presented Φ eq [1 14 cm -2 [M.Moll 27] ] Michael Moll Lausanne, 29. January
44 signal [electrons] Comparison of measured collected charge on different radiation-hard materials and devices pcvd-diamond, 5µm, (RT, µs) [RD42 22] SiC, n-type, 55 µm, (RT, 2.5µs) [Moscatelli et al. 26] sample: irradiation: measurement: analysis: polycrystal, 5µm thick, strip 24 GeV/c protons testbeam, µs shaping most probable values Φ eq [1 14 cm -2 [M.Moll 27] ] Michael Moll Lausanne, 29. January
45 signal [electrons] Comparison of measured collected charge on different radiation-hard materials and devices pcvd-diamond, 5µm, (RT, µs) [RD42 25] pcvd-diamond, 5µm, (RT, µs) [RD42 22] SiC, n-type, 55 µm, (RT, 2.5µs) [Moscatelli et al. 26] sample: irradiation: measurement: analysis: polycrystal, 5µm thick, strip 24 GeV/c protons testbeam, µs shaping most probable values Φ eq [1 14 cm -2 [M.Moll 27] ] Michael Moll Lausanne, 29. January
46 signal [electrons] Comparison of measured collected charge on different radiation-hard materials and devices pcvd-diamond, 5µm, (RT, µs) [RD42 26] pcvd-diamond, 5µm, (RT, µs) [RD42 25] pcvd-diamond, 5µm, (RT, µs) [RD42 22] SiC, n-type, 55 µm, (RT, 2.5µs) [Moscatelli et al. 26] sample: irradiation: measurement: analysis: polycrystal, 5µm thick, strip 24 GeV/c protons testbeam, µs shaping most probable values Diamond quality increasing [2-26] Φ eq [1 14 cm -2 [M.Moll 27] ] Michael Moll Lausanne, 29. January
47 1 Comparison of measured collected charge on different radiation-hard materials and devices signal [electrons] pcvd-diamond, 5µm, (RT, µs) [RD ] (scaled) SiC, n-type, 55 µm, (RT, 2.5µs) [Moscatelli et al. 26] sample: irradiation: measurement: analysis: polycrystal, 5µm thick, strip 24 GeV/c protons testbeam, µs shaping most probable values Φ eq [1 14 cm -2 [M.Moll 27] ] Michael Moll Lausanne, 29. January
48 signal [electrons] Comparison of measured collected charge on different radiation-hard materials and devices pcvd-diamond, 5µm, (RT, µs), strip, [RD ] (scaled) n-epi Si, 15 µm, (-3 o C, 25ns), pad [Kramberger 26] n-epi Si, 75 µm, (-3 o C, 25ns), pad [Kramberger 26] SiC, n-type, 55 µm, (RT, 2.5µs), pad [Moscatelli et al. 26] Φ eq [1 14 cm -2 [M.Moll 27] ] Michael Moll Lausanne, 29. January
49 25 Comparison of measured collected charge on different radiation-hard materials and devices signal [electrons] p-fz Si, 28 µm, (-3 o C, 25ns), strip [Casse 24] p-mcz Si, 3 µm, (-3 o C, µs), pad [Bruzzi 26] n-epi Si, 15 µm, (-3 o C, 25ns), pad [Kramberger 26] n-epi Si, 75 µm, (-3 o C, 25ns), pad [Kramberger 26] pcvd-diamond, 5µm, (RT, µs), strip, [RD ] (scaled) SiC, n-type, 55 µm, (RT, 2.5µs), pad [Moscatelli et al. 26] Φ eq [1 14 cm -2 [M.Moll 27] ] Michael Moll Lausanne, 29. January
50 signal [electrons] Comparison of measured collected charge on different radiation-hard materials and devices 3D FZ Si, 235 µm, (laser injection, scaled!), pad [Da Via 26] p-fz Si, 28 µm, (-3 o C, 25ns), strip [Casse 24] p-mcz Si, 3 µm, (-3 o C, µs), pad [Bruzzi 26] n-epi Si, 15 µm, (-3 o C, 25ns), pad [Kramberger 26] n-epi Si, 75 µm, (-3 o C, 25ns), pad [Kramberger 26] pcvd-diamond, 5µm, (RT, µs), strip, [RD ] (scaled) SiC, n-type, 55 µm, (RT, 2.5µs), pad [Moscatelli et al. 26] Φ eq [1 14 cm -2 [M.Moll 27] ] Michael Moll Lausanne, 29. January 27-5-
51 signal [electrons] Comparison of measured collected charge on different radiation-hard materials and devices 3D FZ Si, 235 µm, (laser injection, scaled!), pad [Da Via 26] p-fz Si, 28 µm, (-3 o C, 25ns), strip [Casse 24] p-mcz Si, 3 µm, (-3 o C, µs), pad [Bruzzi 26] n-epi Si, 15 µm, (-3 o C, 25ns), pad [Kramberger 26] n-epi Si, 75 µm, (-3 o C, 25ns), pad [Kramberger 26] scvd-diamond, 77µm, (RT, µs), [RD42 26] (preliminary data, scaled) pcvd-diamond, 5µm, (RT, µs), strip, [RD ] (scaled) SiC, n-type, 55 µm, (RT, 2.5µs), pad [Moscatelli et al. 26] Φ eq [1 14 cm -2 [M.Moll 27] ] Michael Moll Lausanne, 29. January
52 Signal Charge / Threshold Do not forget: The signal has still to be compared to the noise (the threshold) Michael Moll Lausanne, 29. January
53 Summary Radiation Damage Radiation Damage in Silicon Detectors Change of Depletion Voltage (type inversion, reverse annealing, ) (can be influenced by defect engineering!) Increase of Leakage Current (same for all silicon materials) Increase of Charge Trapping (same for all silicon materials) Signal to Noise ratio is quantity to watch (material + geometry + electronics) Microscopic defects Good understanding of damage after γ-irradiation (point defects) Damage after hadron damage still to be better understood (cluster defects) CERN-RD5 collaboration working on: Material Engineering (Silicon: DOFZ, CZ, EPI, other impurities,. ) (Diamond) Device Engineering (3D and thin detectors, n-in-p, n-in-n, ) To obtain ultra radiation hard sensors a combination of material and device engineering approaches depending on radiation environment, application and available readout electronics will be best solution Michael Moll Lausanne, 29. January
54 Summary Detectors for SLHC At fluences up to 1 15 cm -2 (Outer layers of SLHC detector) the change of the depletion voltage and the large area to be covered by detectors are major problems. CZ silicon detectors could be a cost-effective radiation hard solution no type inversion (to be confirmed), use cost effective p-in-n technology oxygenated p-type silicon microstrip detectors show very encouraging results: CCE 65 e; Φ eq = cm -2, 3µm At the fluence of 1 16 cm -2 (Innermost layers of SLHC detector) the active thickness of any silicon material is significantly reduced due to trapping. The two most promising options besides regular replacement of sensors are: Thin/EPI detectors : drawback: radiation hard electronics for low signals needed (e.g. 23e at Φ eq 8x1 15 cm -2, 5µm EPI) 3D detectors : looks very promising, drawback: technology has to be optimized SiC and GaN have been characterized and abandoned by RD5. Further information: Michael Moll Lausanne, 29. January
55 # electrons Comparison of measured collected charge on different radiation-hard materials and devices Line to guide the eye for planar devices strips pixels MeV n fluence [cm -2 ] p FZ Si 28µm; 25ns; -3 C [1] p-mcz Si 3µm;.2-2.5µs; -3 C [2] n EPI Si 75µm; 25ns; -3 C [3] n EPI Si 15µm; 25ns; -3 C [3] scvd Diam 77µm; 25ns; +2 C [4] pcvd Diam 3µm; 25ns; +2 C [4] n EPI SiC 55µm; 2.5µs; +2 C [5] 3D FZ Si 235µm [6] 16V [1] G. Casse et al. NIM A (24) [2] M. Bruzzi et al. STD6, September 26 [3] G. Kramberger, RD5 Work. Prague 6 [4] W: Adam et al. NIM A (26) [5] F. Moscatelli RD5 Work.CERN 25 [6] C. Da Vià, "Hiroshima" STD6 (charge induced by laser) M. Bruzzi, Presented at STD6 Hiroshima Conference, Carmel, CA, September 26 Thick (3µm) p-type planar detectors can operate in partial depletion, collected charge higher than 12e up to 2x1 15 cm -2. Most charge at highest fluences collected with 3D detectors Silicon comparable or even better than diamond in terms of collected charge (BUT: higher leakage current cooling needed!) Michael Moll Lausanne, 29. January
56 Comparison of measured collected charge on different radiation-hard materials and devices Michael Moll Lausanne, 29. January
Development of Radiation Hard Si Detectors
Development of Radiation Hard Si Detectors Dr. Ajay K. Srivastava On behalf of Detector Laboratory of the Institute for Experimental Physics University of Hamburg, D-22761, Germany. Ajay K. Srivastava
More informationSemiconductor materials and detectors for future very high luminosity colliders
Semiconductor materials and detectors for future very high luminosity colliders Andrea Candelori Istituto Nazionale di Fisica Nucleare (INFN), Italy On behalf of the CERN Collaboration (http://rd5.web.cern.ch/rd5/)
More informationDEVELOPMENT OF RADIATION HARD CZOCHRALSKI SILICON PARTICLE DETECTORS
DEVELOPMENT OF RADIATION HARD CZOCHRALSKI SILICON PARTICLE DETECTORS Helsinki Institute of Physics, CERN/EP, Switzerland Microelectronics Centre, Helsinki University of Technology, Finland Okmetic Ltd.,
More informationSilicon Detectors for the slhc an Overview of Recent RD50 Results
Silicon Detectors for the slhc an Overview of Recent Results Institut für Experimentelle Kernphysik on behalf of the Collaboration 1 Overview Radiation environment and requirements for silicon sensors
More informationRadiation Damage in Silicon Detectors - An introduction for non-specialists -
CERN EP-TA1-SD Seminar 14.2.2001 Radiation Damage in Silicon Detectors - An introduction for non-specialists - Michael Moll CERN EP - Geneva ROSE Collaboration (CERN RD48) ROSE - Research and Development
More informationRecent Advancement in the Development of Radiation Hard Semiconductor Detectors for Very High Luminosity Colliders - the RD50-Collaboration
RESMDD4, Florence, October 1.-13. 24 Recent Advancement in the Development of Radiation Hard Semiconductor Detectors for Very High Luminosity Colliders - the RD5-Collaboration - Motivation RD5-Collaboration
More informationSURVEY OF RECENT RADIATION DAMGE STUDIES AT HAMBURG
SURVEY OF RECENT RADIATION DAMGE STUDIES AT HAMBURG E. Fretwurst 1, D. Contarato 1, F. Hönniger 1, G. Kramberger 2 G. Lindström 1, I. Pintilie 1,3, A. Schramm 1, J. Stahl 1 1 Institute for Experimental
More informationDevelopment of Radiation Hard Sensors for Very High Luminosity Colliders - CERN-RD50 project -
11 th International Workshop on Vertex Detectors, VERTEX 22, Hawaii, November 3-8, 22 Development of Radiation Hard Sensors for Very High Luminosity Colliders - CERN-RD5 project - Michael Moll CERN - Geneva
More informationTracking Detector Material Issues for the slhc
Tracking Detector Material Issues for the slhc Hartmut F.-W. Sadrozinski SCIPP, UC Santa Cruz, CA 95064 Hartmut F.-W. Sadrozinski, US ATLAS Upgrade Meeting Nov 10, 2005 1 Outline of the talk - Motivation
More informationRadiation Tolerant Tracking Detectors for the slhc. Mara Bruzzi Florence University, INFN and SCIPP
Radiation Tolerant Tracking Detectors for the slhc Mara Bruzzi Florence University, INFN and SCIPP Outline of the talk - Motivations - Radiation damage in FZ Si high resistivity detectors - Defect engineering
More informationDevelopment of radiation hard sensors for very high luminosity colliders - CERN - RD50 project -
NIMA 1 NIMA RD5 Internal Note - RD5/23/1 Reviewed manuscript submitted to Vertex 22 Development of radiation hard sensors for very high luminosity colliders - CERN - RD5 project - Michael Moll * CERN,
More informationRD50 Recent Results - Development of radiation hard sensors for SLHC
- Development of radiation hard sensors for SLHC Anna Macchiolo Max-Planck-Institut für Physik Föhringer Ring 6, Munich, Germany E-mail: Anna.Macchiolo@mppmu.mpg.de on behalf of the RD50 Collaboration
More informationImportant point defects after γ and proton irradiation investigated by TSC technique
Important point defects after γ and proton irradiation investigated by TSC technique I. Pintilie a),b), E. Fretwurst b), G. Kramberger c) G. Lindström b) and J. Stahl b) a) National Institute of Materials
More informationDevelopment of Radiation Hard Tracking Detectors
Development of Radiation Hard Tracking Detectors 1) LHC Upgrade environment 2) New tracker materials? 3) Radiation damage in Si a) Effects b) Present microscopic interpretation 4) Bias Dependence of collected
More informationRD50 Recent Developments
MPGD Conference, June 14 2009 Recent Developments Mara Bruzzi Dip. Energetica, University of Florence, INFN Firenze, Italy on behalf of the Collaboration http://www.cern.ch/rd50 Motivation: Signal degradation
More informationLatest results of RD50 collaboration. Panja Luukka
Latest results of RD50 collaboration Development of radiation hard sensors for very high luminosity colliders Panja Luukka Helsinki Institute of Physics on behalf of RD50 collaboration http://www.cern.ch/rd50
More informationRADIATION HARDNESS OF SILICON DETECTORS FOR APPLICATIONS IN HIGH-ENERGY PHYSICS EXPERIMENTS. E. Fretwurst, M. Kuhnke, G. Lindström, M.
Journal of Optoerlectronics and Advanced Mateials Vol. 2, No. 5, 2, p. 575-588 Section 4: Semiconductors RADIATION HARDNESS OF SILICON DETECTORS FOR APPLICATIONS IN HIGH-ENERGY PHYSICS EXPERIMENTS E. Fretwurst,
More informationSilicon Detectors in High Energy Physics
Thomas Bergauer (HEPHY Vienna) IPM Teheran 22 May 2011 Sunday: Schedule Semiconductor Basics (45 ) Silicon Detectors in Detector concepts: Pixels and Strips (45 ) Coffee Break Strip Detector Performance
More informationEUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH STUDIES OF THE RADIATION HARDNESS OF OXYGEN-ENRICHED SILICON DETECTORS
EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH CERN EP/98 62 11 Juin 1998 STUDIES OF THE RADIATION HARDNESS OF OXYGEN-ENRICHED SILICON DETECTORS A. Ruzin, G. Casse 1), M. Glaser, F. Lemeilleur CERN, Geneva,
More informationMara Bruzzi INFN and University of Florence, Italy and SCIPP, UC Santa Cruz, USA
SCIPP 06/16 September 2006 Capacitance-Voltage analysis at different temperatures in heavily irradiated silicon detectors Mara Bruzzi INFN and University of Florence, Italy and SCIPP, UC Santa Cruz, USA
More informationSimulation results from double-sided and standard 3D detectors
Simulation results from double-sided and standard 3D detectors David Pennicard, University of Glasgow Celeste Fleta, Chris Parkes, Richard Bates University of Glasgow G. Pellegrini, M. Lozano - CNM, Barcelona
More informationRadiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation
DESY 2-199 physics/211118 December 22 Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation E. Fretwurst 1, G. Lindstroem 1, I. Pintilie 1,2, J. Stahl 1 1 University
More informationGaN for use in harsh radiation environments
4 th RD50 - Workshop on radiation hard semiconductor devices for very high luminosity colliders GaN for use in harsh radiation environments a (W Cunningham a, J Grant a, M Rahman a, E Gaubas b, J Vaitkus
More informationRanjeet Dalal, Ashutosh Bhardwaj, Kirti Ranjan, Kavita Lalwani and Geetika Jain
Simulation of Irradiated Si Detectors, Ashutosh Bhardwaj, Kirti Ranjan, Kavita Lalwani and Geetika Jain CDRST, Department of physics and Astrophysics, University of Delhi, India E-mail: rdalal@cern.ch
More informationphysics/ Sep 1997
GLAS-PPE/97-6 28 August 1997 Department of Physics & Astronomy Experimental Particle Physics Group Kelvin Building, University of Glasgow, Glasgow, G12 8QQ, Scotland. Telephone: +44 - ()141 3398855 Fax:
More informationCMS Note Mailing address: CMS CERN, CH-1211 GENEVA 23, Switzerland
Available on CMS information server CMS NOTE 2001/023 The Compact Muon Solenoid Experiment CMS Note Mailing address: CMS CERN, CH-1211 GENEVA 23, Switzerland May 18, 2001 Investigations of operating scenarios
More informationCharge Collection and Capacitance-Voltage analysis in irradiated n-type magnetic Czochralski silicon detectors
Charge Collection and Capacitance-Voltage analysis in irradiated n-type magnetic Czochralski silicon detectors M. K. Petterson, H.F.-W. Sadrozinski, C. Betancourt SCIPP UC Santa Cruz, 1156 High Street,
More informationThe annealing of interstitial carbon atoms in high resistivity n-type silicon after proton irradiation
ROSE/TN/2002-01 The annealing of interstitial carbon atoms in high resistivity n-type silicon after proton irradiation M. Kuhnke a,, E. Fretwurst b, G. Lindstroem b a Department of Electronic and Computer
More informationLeakage current of hadron irradiated silicon detectors - material dependence. ROSE/CERN-RD48 collaboration
Paper submitted to the 2 nd International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, held at the Grand Hotel Mediterraneo, Firenze, Italy, March 4-6, 1998, to be
More informationFcal sensors & electronics
Fcal sensors & electronics Alternatives and investigations 7 sessions in 2 days: 1-Introduction session 1: Physics and Beam diagnostic using beamcal 2- Session 2 : integration, vacuum issues 3- Session
More informationSemiconductor-Detectors
Semiconductor-Detectors 1 Motivation ~ 195: Discovery that pn-- junctions can be used to detect particles. Semiconductor detectors used for energy measurements ( Germanium) Since ~ 3 years: Semiconductor
More informationRadiation Damage in Silicon Detectors for High-Energy Physics Experiments
960 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 48, NO. 4, AUGUST 2001 Radiation Damage in Silicon Detectors for High-Energy Physics Experiments Mara Bruzzi Abstract Radiation effects in silicon detectors
More informationComponents of a generic collider detector
Lecture 24 Components of a generic collider detector electrons - ionization + bremsstrahlung photons - pair production in high Z material charged hadrons - ionization + shower of secondary interactions
More informationRadiation hardness of Low Gain Amplification Detectors (LGAD)
Radiation hardness of Low Gain Amplification Detectors (LGAD) G. Kramberger, V. Cindro, I. Mandić, M. Mikuž Ϯ, M. Zavrtanik Jožef Stefan Institute, Ljubljana, Slovenia Ϯ also University of Ljubljana, Faculty
More informationMeasurement of the acceptor removal rate in silicon pad diodes
Measurement of the acceptor removal rate in silicon pad diodes P. Dias de Almeida a,b, I. Mateu a,c, M. Fernández Garcia d, M. Moll a a CERN b Fundação para a Ciência e a Tecnologia (FCT) c Centro de Investigaciones
More informationSolid State Detectors
Solid State Detectors Most material is taken from lectures by Michael Moll/CERN and Daniela Bortoletto/Purdue and the book Semiconductor Radiation Detectors by Gerhard Lutz. In gaseous detectors, a charged
More informationNumerical Modelling of Si sensors for HEP experiments and XFEL
Numerical Modelling of Si sensors for HEP experiments and XFEL Ajay K. Srivastava 1, D. Eckstein, E. Fretwurst, R. Klanner, G. Steinbrück Institute for Experimental Physics, University of Hamburg, D-22761
More informationRadiation Damage in Silicon Particle Detectors in High Luminosity Experiments
Radiation Damage in Silicon Particle Detectors in High Luminosity Experiments Agnieszka Obłąkowska-Mucha AGH UST Kraków within the framework of RD50 Collaboration & LHCb VELO Group 2nd Jagiellonian Symposium
More informationCharge Collection and Space Charge Distribution in Epitaxial Silicon Detectors after Neutron-Irradiation
Charge Collection and Space Charge Distribution in Epitaxial Silicon Detectors after Neutron-Irradiation Thomas Pöhlsen, Julian Becker, Eckhart Fretwurst, Robert Klanner, Jörn Lange Hamburg University
More informationEpitaxial SiC Schottky barriers for radiation and particle detection
Epitaxial SiC Schottky barriers for radiation and particle detection M. Bruzzi, M. Bucciolini, R. D'Alessandro, S. Lagomarsino, S. Pini, S. Sciortino INFN Firenze - Università di Firenze F. Nava INFN Bologna
More informationHigh-resolution photoinduced transient spectroscopy of radiation defect centres in silicon. Paweł Kamiński
Institute of Electronic Materials Technology Joint Laboratory for Characterisation of Defect Centres in Semi-Insulating Materials High-resolution photoinduced transient spectroscopy of radiation defect
More informationDevelopment of a Radiation Hard CMOS Monolithic Pixel Sensor
Development of a Radiation Hard CMOS Monolithic Pixel Sensor M. Battaglia 1,2, D. Bisello 3, D. Contarato 2, P. Denes 2, D. Doering 2, P. Giubilato 2,3, T.S. Kim 2, Z. Lee 2, S. Mattiazzo 3, V. Radmilovic
More informationFluence dependent variations of recombination and deep level spectral characteristics in neutron and proton irradiated MCz, FZ and epi-si structures
Outline Fluence dependent variations of recombination and deep level spectral characteristics in neutron and proton irradiated MCz, FZ and epi-si structures Motivation of combined investigations: E.Gaubas,
More informationRadiation damage in diamond sensors at the CMS experiment of the LHC
Radiation damage in diamond sensors at the CMS experiment of the LHC Moritz Guthoff on behalf of the CMS beam monitoring group ADAMAS Workshop 2012, GSI, Germany IEKP-KIT / CERN KIT University of the State
More informationSolid State Detectors Semiconductor detectors Halbleiterdetektoren
Solid State Detectors Semiconductor detectors Halbleiterdetektoren Doris Eckstein DESY Where are solid state detectors used? > Nuclear Physics: Energy measurement of charged particles (particles up to
More informationATL-INDET /04/2000
Evolution of silicon micro-strip detector currents during proton irradiation at the CERN PS ATL-INDET-2000-009 17/04/2000 R.S.Harper aλ, P.P.Allport b, L.Andricek c, C.M.Buttar a, J.R.Carter d, G.Casse
More informationWorld irradiation facilities for silicon detectors
World irradiation facilities for silicon detectors Vladimir Cindro Jožef Stefan Institute Jamova 39, 1000 Ljubljana, Slovenia E-mail: vladimir.cindro@ijs.si Several irradiation facilities are used for
More informationPreliminary measurements of charge collection and DLTS analysis of p + /n junction SiC detectors and simulations of Schottky diodes
Preliminary measurements of charge collection and DLTS analysis of p + /n junction SiC detectors and simulations of Schottky diodes F.Moscatelli, A.Scorzoni, A.Poggi, R.Nipoti DIEI and INFN Perugia and
More informationChapter 2 Radiation Damage in Silicon Detector Devices
Chapter 2 Radiation Damage in Silicon Detector Devices The intent of this chapter is to introduce the radiation effects and give a general understanding of radiation damage its mechanism, microscopic and
More informationJoint ICTP-IAEA Workshop on Physics of Radiation Effect and its Simulation for Non-Metallic Condensed Matter.
2359-3 Joint ICTP-IAEA Workshop on Physics of Radiation Effect and its Simulation for Non-Metallic Condensed Matter 13-24 August 2012 Electrically active defects in semiconductors induced by radiation
More informationRD50 Collaboration Overview: Development of New Radiation Hard Detectors
RD50 Collaboration Overview: Development of New Radiation Hard Detectors FRONTIER DETECTORS FOR FRONTIER PHYSICS 13th Pisa Meeting on Advanced Detectors 28.05.2015 Susanne Kuehn, Albert-Ludwigs-University
More informationLecture 18. New gas detectors Solid state trackers
Lecture 18 New gas detectors Solid state trackers Time projection Chamber Full 3-D track reconstruction x-y from wires and segmented cathode of MWPC z from drift time de/dx information (extra) Drift over
More information(a) (b) Fig. 1 - The LEP/LHC tunnel map and (b) the CERN accelerator system.
Introduction One of the main events in the field of particle physics at the beginning of the next century will be the construction of the Large Hadron Collider (LHC). This machine will be installed into
More informationRadiation Effects nm Si 3 N 4
The Active DEPFET Pixel Sensor: Irradiation Effects due to Ionizing Radiation o Motivation / Radiation Effects o Devices and Facilities o Results o Summary and Conclusion MPI Semiconductor Laboratory Munich
More informationRadiation Hardness Study on Double Sided 3D Sensors after Proton and Neutron Irradiation up to HL-LHC Fluencies
Radiation Hardness Study on Double Sided 3D Sensors after Proton and Neutron Irradiation up to HL-LHC Fluencies D M S Sultan 1, G.-F. Dalla Betta 1, R. Mendicino 1, M. Boscardin 2 1 University of Trento
More informationRadiation Hard Silicon Particle Detectors for Phase-II LHC Trackers
Radiation Hard Silicon Particle Detectors for Phase-II LHC Trackers Agnieszka Obłąkowska-Mucha AGH UST Kraków on behalf of the Collaboration 14th Topical Seminar on Innovative Particle and Radiation Detectors
More informationCharacterization of Irradiated Doping Profiles. Wolfgang Treberspurg, Thomas Bergauer, Marko Dragicevic, Manfred Krammer, Manfred Valentan
Characterization of Irradiated Doping Profiles, Thomas Bergauer, Marko Dragicevic, Manfred Krammer, Manfred Valentan Vienna Conference on Instrumentation (VCI) 14.02.2013 14.02.2013 2 Content: Experimental
More informationCMS Note Mailing address: CMS CERN, CH-1211 GENEVA 23, Switzerland
Available on CMS information server CMS NOTE 1996/005 The Compact Muon Solenoid Experiment CMS Note Mailing address: CMS CERN, CH-1211 GENEVA 23, Switzerland Performance of the Silicon Detectors for the
More informationarxiv: v1 [physics.ins-det] 25 May 2017
physica status solidi Description of radiation damage in diamond sensors using an effective defect model Florian Kassel *,1,2, Moritz Guthoff 2, Anne Dabrowski 2, Wim de Boer 1 1 Institute for Experimental
More informationTOWARD SUPER RADIATION TOLERANT SEMICONDUCTOR DETECTORS FOR FUTURE ELEMENTARY PARTICLE RESEARCH
Journal of Optoelectronics and Advanced Materials Vol. 6, No. 1, March 24, p. 23-38 REVIEW PAPER TOWARD SUPER RADIATION TOLERANT SEMICONDUCTOR DETECTORS FOR FUTURE ELEMENTARY PARTICLE RESEARCH G. Lindstroem
More informationEffect of fluence on defect structure of proton-irradiated high-resistivity silicon
4 th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN, 5-7 May, 2004 Effect of fluence on defect structure of proton-irradiated high-resistivity silicon P.
More informationX-ray induced radiation damage in segmented p + n silicon sensors
in segmented p + n silicon sensors Jiaguo Zhang, Eckhart Fretwurst, Robert Klanner, Joern Schwandt Hamburg University, Germany E-mail: jiaguo.zhang@desy.de Deutsches Elektronen-Synchrotron (DESY), Germany
More informationStatus Report: Multi-Channel TCT
Status Report: Multi-Channel TCT J. Becker, D. Eckstein, R. Klanner, G. Steinbrück University of Hamburg 1. Introduction 2. Set-up and measurement techniques 3. First results from single-channel measurements
More informationAdvantages / Disadvantages of semiconductor detectors
Advantages / Disadvantages of semiconductor detectors Semiconductor detectors have a high density (compared to gas detector) large energy loss in a short distance diffusion effect is smaller than in gas
More informationReview of Semiconductor Drift Detectors
Pavia October 25, 2004 Review of Semiconductor Drift Detectors Talk given by Pavel Rehak following a presentation on 5 th Hiroshima Symposium of Semiconductor Tracking Detectors Outline of the Review Principles
More informationLecture 2. Introduction to semiconductors Structures and characteristics in semiconductors. Fabrication of semiconductor sensor
Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Fabrication of semiconductor sensor
More informationSemiconductor Detectors
Semiconductor Detectors Summary of Last Lecture Band structure in Solids: Conduction band Conduction band thermal conductivity: E g > 5 ev Valence band Insulator Charge carrier in conductor: e - Charge
More informationIdentifying Particle Trajectories in CMS using the Long Barrel Geometry
Identifying Particle Trajectories in CMS using the Long Barrel Geometry Angela Galvez 2010 NSF/REU Program Physics Department, University of Notre Dame Advisor: Kevin Lannon Abstract The Compact Muon Solenoid
More informationSilicon Detectors in High Energy Physics
Thomas Bergauer (HEPHY Vienna) IPM Teheran 22 May 2011 Sunday: Schedule Silicon Detectors in Semiconductor Basics (45 ) Detector concepts: Pixels and Strips (45 ) Coffee Break Strip Detector Performance
More informationDetectors for High Energy Physics
Detectors for High Energy Physics Ingrid-Maria Gregor, DESY DESY Summer Student Program 2017 Hamburg July 26th/27th Overview I. Detectors for Particle Physics II. Interaction with Matter } Wednesday III.
More informationD. Meier. representing the RD42 Collaboration. Bristol University, CERN, CPP Marseille, Lawrence Livermore National Lab, LEPSI
Diamond as a Particle Detector D. Meier representing the RD42 Collaboration Bristol University, CERN, CPP Marseille, Lawrence Livermore National Lab, LEPSI Strasbourg, Los Alamos National Lab, MPIK Heidelberg,
More informationAspects of radiation hardness for silicon microstrip detectors
Aspects of radiation hardness for silicon microstrip detectors Richard Wheadon, INFN Pisa, Via Livornese 1291, S. Piero a Grado, Pisa, Italy Abstract The ways in which radiation damage affects the properties
More informationModelling of Diamond Devices with TCAD Tools
RADFAC Day - 26 March 2015 Modelling of Diamond Devices with TCAD Tools A. Morozzi (1,2), D. Passeri (1,2), L. Servoli (2), K. Kanxheri (2), S. Lagomarsino (3), S. Sciortino (3) (1) Engineering Department
More informationControl of the fabrication process for the sensors of the CMS Silicon Strip Tracker. Anna Macchiolo. CMS Collaboration
Control of the fabrication process for the sensors of the CMS Silicon Strip Tracker Anna Macchiolo Universita di Firenze- INFN Firenze on behalf of the CMS Collaboration 6 th International Conference on
More informationComparing radiation tolerant materials and devices for ultra rad-hard tracking detectors
Nuclear Instruments and Methods in Physics Research A 579 (27) 754 761 www.elsevier.com/locate/nima Comparing radiation tolerant materials and devices for ultra rad-hard tracking detectors Mara Bruzzi
More informationMara Bruzzi INFN-Firenze Dipartimento di Energetica Firenze, Italy
Radiation Hardness of Silicon Detectors for High-Energy Physics: From Past Searches to Future Perspectives Seminar to honor Prof. Gunnar Lindström 80 th birthday Mara Bruzzi INFN-Firenze Dipartimento di
More informationATLAS Inner Detector Upgrade
ATLAS Inner Detector Upgrade 11th Topical Seminar on Innovative Particle and Radiation Detectors Siena, Italy 3 October 2008 Paul Dervan, Liverpool University On behave of the: ATLAS High Luminosity Upgrade
More informationDefect characterization in silicon particle detectors irradiated with Li ions
Defect characterization in silicon particle detectors irradiated with Li ions M. Scaringella, M. Bruzzi, D. Menichelli, A. Candelori, R. Rando Abstract--High Energy Physics experiments at future very high
More informationSimulation of Radiation Effects on Semiconductors
Simulation of Radiation Effects on Semiconductors Design of Low Gain Avalanche Detectors Dr. David Flores (IMB-CNM-CSIC) Barcelona, Spain david.flores@imb-cnm.csic.es Outline q General Considerations Background
More informationTCT and CCE measurements for 9 MeV and 24 GeV/c irradiated n-type MCz-Si pad
TCT and CCE measurements for 9 MeV and 24 GeV/c irradiated n-type MCz-Si pad J. Härkönen 1), E. Tuovinen 1), S. Czellar 1), I. Kassamakov 1), P. Luukka 1), E. Tuominen 1), S. Väyrynen 2) and J. Räisänen
More informationSemiconductor X-Ray Detectors. Tobias Eggert Ketek GmbH
Semiconductor X-Ray Detectors Tobias Eggert Ketek GmbH Semiconductor X-Ray Detectors Part A Principles of Semiconductor Detectors 1. Basic Principles 2. Typical Applications 3. Planar Technology 4. Read-out
More informationThe ATLAS Silicon Microstrip Tracker
9th 9th Topical Seminar on Innovative Particle and Radiation Detectors 23-26 May 2004 Siena3 The ATLAS Silicon Microstrip Tracker Zdenek Dolezal, Charles University at Prague, for the ATLAS SCT Collaboration
More informationCharacterisation of silicon sensor materials and designs for the CMS Tracker Upgrade
Characterisation of silicon sensor materials and designs for the CMS Tracker Upgrade KIT - Karlsruhe Institute of Technology (DE) E-mail: alexander.dierlamm@cern.ch During the high luminosity phase of
More informationChallenges for Silicon Pixel Sensors at the XFEL. Table of Content
Challenges for Silicon Pixel Sensors at the XFEL R.Klanner (Inst. Experimental Physics, Hamburg University) work by J.Becker, E.Fretwurst, I.Pintilie, T.Pöhlsen, J.Schwandt, J.Zhang Table of Content 1.Introduction:
More informationSilicon Tracking Detectors for the LHC experiments
Silicon Tracking Detectors for the LHC experiments Vincenzo Chiochia Physik Institut der Universität Zürich-Irchel CH-8057 Zürich (Switzerland) DESY Seminar March 7 th, 2006 Outline Part 1: 1. Tracking
More informationModeling of charge collection efficiency degradation in semiconductor devices induced by MeV ion beam irradiation
Modeling of charge collection efficiency degradation in semiconductor devices induced by MeV ion beam irradiation Ettore Vittone Physics Department University of Torino - Italy 1 IAEA Coordinate Research
More informationGuard Ring Simulations for n-on-p Silicon Particle Detectors
Physics Physics Research Publications Purdue University Year 2010 Guard Ring Simulations for n-on-p Silicon Particle Detectors O. Koybasi G. Bolla D. Bortoletto This paper is posted at Purdue e-pubs. http://docs.lib.purdue.edu/physics
More informationAIDA-2020 Advanced European Infrastructures for Detectors at Accelerators. Conference/Workshop Paper
AIDA-2020-CONF-2016-007 AIDA-2020 Advanced European Infrastructures for Detectors at Accelerators Conference/Workshop Paper Measurements and TCAD Simulations of Bulk and Surface Radiation Damage Effects
More informationStatus Report: Charge Cloud Explosion
Status Report: Charge Cloud Explosion J. Becker, D. Eckstein, R. Klanner, G. Steinbrück University of Hamburg Detector laboratory 1. Introduction and Motivation. Set-up available for measurement 3. Measurements
More informationPoS(Vertex2014)024. Diamond particle detector systems. Alexander Oh University of Manchester
University of Manchester E-mail: alexander.oh@manchester.ac.uk Diamond detectors have been used in HEP experiments at the LHC and upgrades are foreseen during the shutdown phase before LHC restarts its
More informationCharge transport properties. of heavily irradiated
Charge transport properties of heavily irradiated Characterization SC CVD detectors diamond detectors SC CVDofdiamond for heavy ions spectroscopy Michal Pomorski and MIPs timing Eleni Berdermann GSI Darmstadt
More informationDiamond (Radiation) Detectors Are Forever! Harris Kagan
Diamond (Radiation) Detectors Are Forever! Outline of the Talk Introduction to Diamond Recent Results Applications Summary Diamond (Radiation) Detectors Are Forever! (page 1) Introduction Motivation: Tracking
More informationarxiv:physics/ v2 [physics.ins-det] 18 Jul 2000
Lorentz angle measurements in irradiated silicon detectors between 77 K and 3 K arxiv:physics/759v2 [physics.ins-det] 18 Jul 2 W. de Boer a, V. Bartsch a, J. Bol a, A. Dierlamm a, E. Grigoriev a, F. Hauler
More informationLecture 8. Detectors for Ionizing Particles
Lecture 8 Detectors for Ionizing Particles Content Introduction Overview of detector systems Sources of radiation Radioactive decay Cosmic Radiation Accelerators Interaction of Radiation with Matter General
More informationGuard Ring Width Impact on Impact Parameter Performances and Structure Simulations
LHCb-2003-034, VELO Note 13th May 2003 Guard Ring Width Impact on Impact Parameter Performances and Structure Simulations authors A Gouldwell, C Parkes, M Rahman, R Bates, M Wemyss, G Murphy The University
More informationEffects of Antimony Near SiO 2 /SiC Interfaces
Effects of Antimony Near SiO 2 /SiC Interfaces P.M. Mooney, A.F. Basile, and Zenan Jiang Simon Fraser University, Burnaby, BC, V5A1S6, Canada and Yongju Zheng, Tamara Isaacs-Smith Smith, Aaron Modic, and
More informationCMS Note Mailing address: CMS CERN, CH-1211 GENEVA 23, Switzerland
Available on CMS information server CMS NOTE 199/11 The Compact Muon Solenoid Experiment CMS Note Mailing address: CMS CERN, CH-1211 GENEVA 23, Switzerland 11 February 199 Temperature dependence of the
More informationA new protocol to evaluate the charge collection efficiency degradation in semiconductor devices induced by MeV ions
Session 12: Modification and Damage: Contribute lecture O-35 A new protocol to evaluate the charge collection efficiency degradation in semiconductor devices induced by MeV ions Ettore Vittone Physics
More informationTracking in High Energy Physics: Silicon Devices!
Tracking in High Energy Physics: Silicon Devices! G. Leibenguth XIX Graduiertenkolleg Heidelberg 11-12. October 2007 Content Part 1: Basics on semi-conductor Part 2: Construction Part 3: Two Examples Part
More informationLecture 2. Introduction to semiconductors Structures and characteristics in semiconductors
Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation
More information