RTAD Dual Ferroelectric Capacitors in TO-18 Package
|
|
- Cory Hill
- 6 years ago
- Views:
Transcription
1 Radiant Technologies, Inc. 2835D Pan American Freeway NE Albuquerque, NM 877 Tel: Fax: Date: April 16, 13 RTAD Dual Ferroelectric Capacitors in TO-18 Package Summary: The RTAD package contains two identical 3% niobium-doped /8 PZT capacitors with platinum electrodes. Each die is packaged in a four-lead TO-18 header. One package lead connects to the case and is labeled GND. The two capacitors share a single COMMON but have separate leads for their other electrodes. The COMMON lead connects to a common bottom electrode. Top view TO-18 Package COMMON CAP A CAP B CASE Cap A Common Cap B Temperature Range: C to 85 C. Do not exceed 85 C. Absolute Maximum Voltage: 5V Structural Specification: AD 14Å thick 3//8 PNbZT with platinum electrodes and glass passivation. Part Number Capacitor Area AD4,µ 2 Total PZT Lead Content per Die: 1.7 grams AD43 4,µ 2 AD3,µ 2 Maximum Voltage for Normal Operation: 4.2V AD42 4,µ 2 AD2 1,µ 2 Fatigue Limit to 5%: 1,, cycles AD41 4µ 2 Imprint Lifetime RT: > years AD1 µ 2 Imprint Lifetime 85 C: TBD Recovery: 5V 1Hz square wave for seconds from room temperature to 85 C. EDU Compatibility: The EDU can test Type AD capacitors of,µm 2 area (AD3) or less. All other Radiant testers can test all Type AD capacitors regardless of area. For an explanation of the specifications, see Explanation of Ferroelectric Capacitor Properties.
2 u C / c m 2 Data Plots: Polarization H y s te re s is a t R o o m T e m p e ra tu re a n d 8 5 C [ Type A D 3 ] Hyst 4.2V AFTER : Polarization (µc /cm2) Hyst 4.2V AFTER : Polarization (µc /cm2) Voltage The Blue loop in the plot above is the room temperature hysteresis of the Type AD capacitor. The Red loop is the response at 85 C. Radiant Technologies, Inc. 2
3 P o l a r i z a t i o n ( u C / c m 2 ) S w itc h e d v s U n s w itc h e d H a lf-l o o p s a t R o o m T e m p e rta u re [ R TA D 4 ] 7 Read UP: Polarization (µc /cm2) Read DO WN: Polarization (µc/cm2) Volts To determine the charge generated by a capacitor of specific area, multiply the polarization value from the chart above by the area of the capacitor. Always use the bottom, upward-going half of each trace. Example: What is the charge generated at 4. volts non-switching for a, m 2 capacitor? Polarization x Area = Charge 13 C/cm 2 x [, m 2 x ( -8 cm 2 / m 2 ) ] = 1.3nC 13 C/cm 2 x -4 cm 2 = 1.3nC Note that capacitor areas are denoted in units of square microns while polarization is given in units of square centimeters. There are 1x 8 square microns in a square centimeter. The Type AD capacitors are.14 thick and may be operated up to 5V. The capacitor will withstand 4.2 volts or less under long term DC bias at room temperature. The Type AD is intended for operation from room temperature to 85 C and will begin to leak slightly during hysteresis loops slower than 2 seconds at 85 C. Radiant Technologies, Inc. 3
4 u C / c m 2 u C / c m 2 Switching Speed The Type AD capacitors will switch faster than one microsecond. Below are the Remanent Polarization vs Pulse Width measurements for room temperature and 85 C. The capacitor under test has an area of, 2. P U N D v s P u l se W i d t h 4.2 V R T [ T ype A D 3 ] PUND 4.2V : P * (µc/cm2) PUND 4.2V : P^ (µc/cm2) 7 PUND 4.2V : dp Switching Remanent Non-switching Log (ms) P U N D v s P u l se W i d t h 4.2 V 8 5 C [ T ype A D 3 ] PUND 4.2V : P * (µc/cm2) PUND 4.2V : P^ (µc/cm2) PUND 4.2V : dp 6 5 Switching 4 Remanent Non-switching Log (ms) Radiant Technologies, Inc. 4
5 dp Fatigue The Type AD capacitor has a fatigue lifetime of 1,, cycles to 5% over the temperature range of room temperature to 85 C. Neither temperature nor fatigue frequency has a significant impact on fatigue lifetime. AD3: RT vs 85 C Fatigue RT dp 1kHz 85C dp 1kHz RT dp Hz , 1,,,, Log (cycles) AD3: Alternating 4.2V s pulses with one pair executed at the frequency denoted. Radiant Technologies, Inc. 5
6 Area Designations Area (cm 2 ) 1x -2 1x -3 4x -4 1x -4 4x -5 1x -5 4x -6 1x -6 Alphanumeric RTAD5 RTAD4 RTAD43 RTAD3 RTAD42 RTAD2 RTAD41 RTAD1 NOTE: The RT will not be included on package labels. Package: Header: HDR1833 Lid: CAN187 Specification: Commercial C to 85 C Atmosphere: Air Bonds: Gold wire between gold bond pads and gold coated posts Radiant Technologies, Inc. 6
RTAC104 AFM References in Package
Radiant Technologies, Inc. 2835D Pan American Freeway NE Albuquerque, NM 87107 Tel: 505-842-8007 Fax: 505-842-0366 e-mail: radiant@ferrodevices.com www.ferrodevices.com RTAC104 AFM References in Package
More informationCompensating for Time Dependent Charge Components in Hysteresis Loops
Compensating for Time Dependent Charge Components in Hysteresis Loops Scott P. Chapman, Joe T. Evans, Jr., Bob C. Howard,, Albuquerque, NM USA 87112 radiant@ferrodevices.com September 29, 28 Summary The
More informationTechnical Report PZT-Silicon Cantilever Benders
Radiant Technologies, Inc. 2021 Girard SE Albuquerque, NM 876 Tel: 505-842-8007 Fax: 505-842-0366 Technical Report PZT-Silicon Cantilever Benders Subject: Displacement Measurements of Silicon Cantilevers
More informationAn Autonomous Nonvolatile Memory Latch
Radiant Technologies, Inc. 2835D Pan American Freeway NE Albuquerque, NM 87107 Tel: 505-842-8007 Fax: 505-842-0366 e-mail: radiant@ferrodevices.com www.ferrodevices.com An Autonomous Nonvolatile Memory
More informationA Short Tutorial on the Origin of Hysteresis in PZT
A Short Tutorial on the Origin of Hysteresis in PZT Radiant Technologies, Inc., Albuquerque, NM USA radiant@ferrodevices.com Rev D April 3, 2013 Radiant EDU A Simple Ferroelectric Tester for Education
More informationSwitching Current Study: Hysteresis Measurement of Ferroelectric Capacitors using Current-Voltage Measurement Method
Chapter 7 Switching Current Study: Hysteresis Measurement of Ferroelectric Capacitors using Current-Voltage Measurement Method 7-1. Introduction Over the past few decades, various methods for obtaining
More informationIntroduction to the Radiant EDU
Introduction to the Radiant EDU Radiant Technologies, Inc., Albuquerque, NM USA radiant@ferrodevices.com Rev D April 4, 2013 Summary Radiant Technologies has created the Radiant EDU, a low-cost, simple
More informationApplication Note Measuring Calibrated Magneto-electric Samples Rev A
Application Note Measuring Calibrated Magneto-electric Samples Rev A Radiant Technologies, Inc. 2835D Pan American Freeway NE Albuquerque, NM 87107 Tel: 505-842-8007 Fax: 505-842-0366 e-mail: radiant@ferrodevices.com
More informationTesting Thermodynamic States
Testing Thermodynamic States Joe T. Evans, January 16, 2011 www.ferrodevices.com Presentation Outline Introduction A charge model for electrical materials Instrumentation theory based on the charge model
More informationFerroelectric Circuit Equations
Ferroelectric Circuit Equations Joe T. Evans Jr. Albuquerque, NM Presented January 22 at the Electronic Materials and Applications 2014 in Orlando, Florida Why Circuit Equations? Power R sense T2 Vout
More informationSUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION Insulating Interlocked Ferroelectric and Structural Antiphase Domain Walls in Multiferroic YMnO 3 T. Choi 1, Y. Horibe 1, H. T. Yi 1,2, Y. J. Choi 1, Weida. Wu 1, and S.-W. Cheong
More informationTechnical Report EXP14AT Rev F
Radiant Technologies, Inc. 2835B Pan American Freeway NE Albuquerque, NM 87107 Tel: 505-842-8007 Fax: 505-842-0366 e-mail: radiant@ferrodevices.com www.ferrodevices.com Technical Report EXP14AT Rev F Title:
More informationSummary of Specifications
Y5U Ceramic Radial Lead High CV 25 C Maximum Temperature Actual Size The series are radial lead ceramic capacitors from UCC/NCC. These capacitors have a very low and impedance which makes these capacitors
More informationSUPPLEMENTARY INFORMATION
doi: 1.138/nature8731 Here we supplement the results of the X-ray crystallographic analysis at room temperature and detail procedures for evaluation of spontaneous polarization of the croconic acid crystal.
More informationSUPPLEMENTARY INFORMATION
DOI: 1.138/NMAT415 Giant Switchable Photovoltaic Effect in Organometal Trihalide Perovskite Devices Zhengguo Xiao 1,2, Yongbo Yuan 1,2, Yuchuan Shao 1,2, Qi Wang, 1,2 Qingfeng Dong, 1,2 Cheng Bi 1,2, Pankaj
More informationSupplementary Information for. Non-volatile memory based on ferroelectric photovoltaic effect
Supplementary Information for Non-volatile memory based on ferroelectric photovoltaic effect Rui Guo 1, Lu You 1, Yang Zhou 1, Zhi Shiuh Lim 1, Xi Zou 1, Lang Chen 1, R. Ramesh 2, Junling Wang 1* 1 School
More informationMeasuring Magnetoelectric and Magnetopiezoelectric Effects
Measuring Magnetoelectric and Magnetopiezoelectric Effects S.P. Chapman, J.T. Evans, S.T. Smith, B.C. Howard, A. Gallegos Radiant Technologies, Inc. Albuquerque, NM 87107 USA radiant@ferrodevices.com Abstract
More informationFerroelectric HfO 2 Thin Films
Ferroelectric HfO 2 Thin Films May 12 th, 2015 JACKSON ANDERSON ELECTRICAL AND MICROELECTRONIC ENGINEERING ROCHESTER INSTITUTE OF TECHNOLOGY Outline Introduction Background Project Objectives Experimental
More informationCapacitor Technology and Manufacturing Expertise
Capacitors Capacitor Technology and Manufacturing Expertise With more than 25 years of experience in manufacturing single layer capacitors made with EIA Class I, II and III ceramic dielectric materials,
More informationDiamond-like carbon film deposition on PZT ferroelectrics and YBCO superconducting films using KrF excimer laser deposition
Composites: Part B 30 (1999) 685 689 www.elsevier.com/locate/compositesb Diamond-like carbon film deposition on PZT ferroelectrics and YBCO superconducting films using KrF excimer laser deposition K. Ebihara*,
More informationDepolarization of a piezoelectric film under an alternating current field
JOURNAL OF APPLIED PHYSICS 101, 054108 2007 Depolarization of a piezoelectric film under an alternating current field K. W. Kwok, a M. K. Cheung, H. L. W. Chan, and C. L. Choy Department of Applied Physics
More informationExploring Autonomous Memory Circuit Operation
Exploring Autonomous Memory Circuit Operation October 21, 2014 Autonomous Au-to-no-mous: Merriam-Webster Dictionary (on-line) a. Existing independently of the whole. b. Reacting independently of the whole.
More informationRFB Series (High R.C., Long Life) MERITEK
FEATURES Low impedance and long life withstanding 10000 hours load life. Suitable for electronic ballast, adaptor and switching power. SPECIFICATIONS Item Operating Temp Range Rated Working Voltage Capacitance
More informationElectrical Characterization with SPM Application Modules
Electrical Characterization with SPM Application Modules Metrology, Characterization, Failure Analysis: Data Storage Magnetoresistive (MR) read-write heads Semiconductor Transistors Interconnect Ferroelectric
More informationHIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS
DESCRIPTION The / optocouplers consist of an AlGaAS LED, optically coupled to a very high speed integrated photo-detector logic gate with a strobable output. The devices are housed in a compact small-outline
More informationMP112D GHz GaAs MMIC Attenuator. Datasheet
MP112D 0.1-15 GHz GaAs MMIC Attenuator Datasheet MP112D 0.1-15 GHz GaAs MMIC Attenuator MAIN FEATURES Operating range 0.1 to 15 GHz Insertion loss 4.5 db at 10 GHz Attenuation range 31.5 db (6 bit, 64
More informationThe electric field induced strain behavior of single. PZT piezoelectric ceramic fiber
The electric field induced strain behavior of single PZT piezoelectric ceramic fiber Xiong Yang a, Jing Zhou a,*, Sen Zhang a, Jie Shen b, Jing Tian a, Wen Chen a, Qi Zhang ac a State Key Laboratory of
More informationSolid Tantalum SMD Capacitors TANTAMOUNT, Hi-Rel COTS, Low ESR, Metal Case
Solid Tantalum SMD Capacitors TANTAMOUNT, Hi-Rel COTS, Low ESR, Metal Case PERFORMANCE CHARACTERISTICS Operating Temperature: -55 C to +125 C (above 85 C, voltage derating is required) Capacitance Range:
More informationRP mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator. General Description. Features. Applications. Ordering Information. Marking Information
RP122 3mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator General Description The RP122 is designed for portable RF and wireless applications with demanding performance and space requirements. The RP122
More informationFreescale Semiconductor
Freescale Semiconductor Pressure Rev 14, 10/2008 + 10 kpa Uncompensated Silicon Pressure The series silicon piezoresistive pressure sensors provide a very accurate and linear voltage output, directly proportional
More informationLaser Annealing of MOCVD Deposited Ferroelectric SrBi 2 Ta 2 O 9, Pb(Zr X Ti 1-X )O 3 and CeMnO 3 Thin Films
1 Laser Annealing of MOCVD Deposited Ferroelectric SrBi 2 Ta 2 O 9, Pb(Zr X Ti 1-X )O 3 and CeMnO 3 Thin Films N.M. Sbrockey 1, J.D. Cuchiaro 1, L.G. Provost 1, C.E. Rice 1, S. Sun 1, G.S. Tompa 1, R.L.
More informationReference Specification
Reference Specification High Voltage Ceramic Capacitor DHRB5AD221M1CB Issued Date: November 14, 2012 Product specifications in this drawing are subject to change or our products described in this drawing
More informationBLC Series - Basic Compact Pressure Sensor Series. Introduction
Sensors CoBeam TM Technology. The device provides a high output Features & Applications... signal at a low operating voltage and reduces the overall supply Standard Pressure Ranges... voltage while maintaining
More information200 kpa On-Chip Temperature. Compensated Silicon Pressure Sensors. MPX2200 Series. Pressure. Application Examples. Features. MPX2200 Rev 13, 10/2008
Pressure Rev 13, 10/2008 200 kpa On-Chip Temperature + Compensated ilicon Pressure The series devices are silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output directly
More informationThe Basic Capacitor. Dielectric. Conductors
Chapter 9 The Basic Capacitor Capacitors are one of the fundamental passive components. In its most basic form, it is composed of two conductive plates separated by an insulating dielectric. The ability
More informationHAL501...HAL506, HAL508 Hall Effect Sensor ICs MICRONAS INTERMETALL MICRONAS. Edition May 5, DS
MICRONAS INTERMETALL HAL1...HAL, HAL Hall Effect Sensor ICs Edition May, 1997 1--1DS MICRONAS HAL1...HAL HAL Hall Effect Sensor IC in CMOS technology Common Features: switching offset compensation at khz
More informationPHYSICS 171 UNIVERSITY PHYSICS LAB II. Experiment 6. Transient Response of An RC Circuit
PHYSICS 171 UNIVERSITY PHYSICS LAB II Experiment 6 Transient Response of An RC Circuit Equipment: Supplies: Function Generator, Dual Trace Oscilloscope.002 Microfarad, 0.1 Microfarad capacitors; 1 Kilohm,
More informationSC125MS. Data Sheet and Instruction Manual. ! Warning! Salem Controls Inc. Stepper Motor Driver. Last Updated 12/14/2004
SC125MS Stepper Motor Driver Salem Controls Inc. Last Updated 12/14/2004! Warning! Stepper motors and drivers use high current and voltages capable of causing severe injury. Do not operate this product
More informationMLC Discoidal Capacitors for EMI-RFI Filters Employing Non- Overlapping Electrodes Yield Substantial Performance Improvements.
CARTS USA 2005 March 21-24, 2005 Palm Springs, CA MLC Discoidal Capacitors for EMI-RFI Filters Employing Non- Overlapping Electrodes Yield Substantial Performance Improvements. Hung V. Trinh, Daniel F.
More informationL4970A 10A SWITCHING REGULATOR
L4970A 10A SWITCHING REGULATOR 10A OUTPUT CURRENT.1 TO 40 OUTPUT OLTAGE RANGE 0 TO 90 DUTY CYCLE RANGE INTERNAL FEED-FORWARD LINE REGULA- TION INTERNAL CURRENT LIMITING PRECISE.1 ± 2 ON CHIP REFERENCE
More informationDVSA2800D Series HIGH RELIABILITY HYBRID DC-DC CONVERTERS DESCRIPTION FEATURES
HIGH RELIABILITY HYBRID DC-DC CONVERTERS DESCRIPTION The DVSA series of high reliability DC-DC converters is operable over the full military (- C to +12 C) temperature range with no power derating. Unique
More informationProcessing and characterization of ferroelectric thin films obtained by pulsed laser deposition
ELECTROCERAMICS IX, Cherbourg, 2004. Symp. D: Pyro, Piezo, Ferroelectrics: B1-P-578 Processing and characterization of ferroelectric thin films obtained by pulsed laser deposition F. Craciun a,*, M. Dinescu
More informationDynamic Models for Passive Components
PCB Design 007 QuietPower columns Dynamic Models for Passive Components Istvan Novak, Oracle, February 2016 A year ago the QuietPower column [1] described the possible large loss of capacitance in Multi-Layer
More informationRadial Aluminium Electrolytic Capacitors
Radial Aluminium Electrolytic Capacitors Low ESR / Z, 105 C Low ESR / Z, Endurance 2.500h to 10.000h at 105 C Rated voltage range: 6,3V to 100V, Nominal capacitance range: 0,47µF to 22.000µF Size range:
More informationLeakage Current-Voltage Characteristics of Ferroelectric Thin Film Capacitors
Journal of the Korean Physical Society, Vol. 38, No. 6, June 2001, pp. 723 728 Leakage Current-Voltage Characteristics of Ferroelectric Thin Film Capacitors Kwangbae Lee and Byung Roh Rhee Department of
More informationC2D05120A Silicon Carbide Schottky Diode Zero Recovery Rectifier
C2D512A Silicon Carbide Schottky Diode Zero Recovery Rectifier RM = 12 V ( =135 C) = 8.5 A Q c = 28 nc Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency
More informationLecture 18. New gas detectors Solid state trackers
Lecture 18 New gas detectors Solid state trackers Time projection Chamber Full 3-D track reconstruction x-y from wires and segmented cathode of MWPC z from drift time de/dx information (extra) Drift over
More informationTransduction Based on Changes in the Energy Stored in an Electrical Field
Lecture 7-1 Transduction Based on Changes in the Energy Stored in an Electrical Field - Electrostriction The electrostrictive effect is a quadratic dependence of strain or stress on the polarization P
More informationInterference suppression film capacitors MKP 336 1
MKP RADIAL POTTED TYPE PITCH /15/22.5/27.5 mm l b h lt P d t CBA196 Fig.1 Simplified outlines. FEATURES to 27.5 mm lead pitch Supplied loose in box and taped on reel Consists of a low-inductive wound cell
More information1. Chapter 1: Introduction
1. Chapter 1: Introduction Non-volatile memories with ferroelectric capacitor materials are also known as ferroelectric random access memories (FRAMs). Present research focuses on integration of ferroelectric
More informationVoltage Breakdown Mechanisms in High Voltage Rated, Surface Mount MLCCs
CARTS USA 2007, 27 th Symposium for Passive Electronic Components, Albuquerque, New Mexico, USA, March 26 29, 2007 Voltage Breakdown Mechanisms in High Voltage Rated, Surface Mount MLCCs J. Bultitude,
More informationGR16. Technical Manual. 10 M SPS, 16-bit Analog Signal Digitizer up to 8MB FIFO
GR M SPS, -bit Analog Signal Digitizer up to MB FIFO Technical Manual 90 th Street, Davis, CA 9, USA Tel: 0--00 Fax: 0--0 Email: sales@tern.com web site: www.tern.com COPYRIGHT GR, EL, Grabber, and A-Engine
More informationPlastic Film Capacitors. Metallized Polypropylene Film Capacitor E C W F D E C W F D
Metallized Polypropylene Film Capacitor Type : ECWFD Non-inductive construction using metalized Polypropylene film with flame retardant epoxy resin coating. Features Small size Excellent frequency characteristics
More informationORDERING INFORMATION # of Ports Pressure Type Device Name
Rev 13, 10/2008 10 kpa On-Chip Temperature + Compensated and Calibrated Silicon Pressure The series silicon piezoresistive pressure sensors provide a very accurate and linear voltage output directly proportional
More informationSolid Tantalum Surface Mount Chip Capacitors TANTAMOUNT, Molded Case, for Medical Instruments
Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT, Molded Case, for Medical Instruments FEATURES For non-life support medical applications High reliability Weibull grading options DC leakage at 0.005
More informationSCM Series Supercapacitor Modules Series-Connected Supercapacitors
The new series of cylindrical electrochemical double-layer capacitors offers excellent pulse power handling characteristics based on the combination of very high capacitance and very low. Used by themselves
More informationReference Specification
Reference Specification High Voltage Ceramic Capacitor DHRB34C221M1FB Issued Date: March 18, 2014 Product specifications in this drawing are subject to change or our products described in this drawing
More informationKH600. 1GHz, Differential Input/Output Amplifier. Features. Description. Applications. Typical Application
KH 1GHz, Differential Input/Output Amplifier www.cadeka.com Features DC - 1GHz bandwidth Fixed 1dB (V/V) gain 1Ω (differential) inputs and outputs -7/-dBc nd/3rd HD at MHz ma output current 9V pp into
More informationCapacitance Cap. Tol. Suffix construction. Rated voltage 450 VDC
Metallized Polypropylene Film Capacitors Type:ECWFD Plastic Film Capacitors Non-inductive construction using metalized Polypropylene film with flame retardant epoxy resin coating. Features Small size Excellent
More informationWTSC144.xxx Wire Bonding Temperature Silicon Vertical Capacitor
WTSC144.xxx Wire Bonding Temperature Silicon Vertical Capacitor Rev 3.1 Key features Full compatible to monolithic ceramic capacitors Ultra high stability of capacitance value: Temperature ±1.5% (-55 C
More informationALUMINUM ELECTROLYTIC CAPACITORS Capacitor Life
1 of 8 5/12/2008 10:23 PM Home About Us Products Contact Us Info Other Links Aluminum Part # Search ALUMINUM ELECTROLYTIC CAPACITORS Capacitor Life Table of Contents Capacitor Life The life of aluminum
More information200 kpa On-Chip Temperature Compensated Silicon Pressure Sensors
Freescale Semiconductor Data Sheet: Technical Data Pressure Document Number: Rev 8, 10/2012 200 kpa On-Chip Temperature Compensated Silicon Pressure The devices series are silicon piezoresistive pressure
More informationDATA SHEET. Radial series Leaded ceramic multilayer capacitors. BCE Sud Passive Components Oct 16
DATA SEET File under BCE Sud Passive Components, 2003 Oct 16 BCE Sud Passive Components A former part of Philips Components FEATURES Very high capacitance per unit volume Low cost. APPLICATIONS These conformally
More informationFile Name: Supplementary Movie 1 Description: An electronic watch is powered and a capacitor is charged quickly while a TENG works in high vacuum.
File Name: Supplementary Information Description: Supplementary Figures and Supplementary Notes File Name: Supplementary Movie 1 Description: An electronic watch is powered and a capacitor is charged quickly
More informationSolid Tantalum Chip Capacitors TANTAMOUNT, Low Profile, Conformal Coated, Maximum CV
Solid Tantalum Chip Capacitors TANTAMOUNT, Low Profile, Conformal Coated, Maximum CV FEATURES New case size offerings. 2mm height Terminations: Tin (2) standard. Low ESR 8mm, 12mm tape and reel packaging
More informationRT9166/A. 300/600mA, Ultra-Fast Transient Response LDO Regulator. Features. General Description. Applications
Pin Configurations RT9166/A 3/6mA, Ultra-Fast Transient Response LDO Regulator General Description The RT9166/A series are CMOS low dropout regulators optimized for ultra-fast transient response. The devices
More informationFFS50120AF-DIE. Silicon Carbide Schottky Diode 1200 V, 50 A
FFS512AF-DIE Silicon Carbide Schottky Diode 12 V, 5 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability
More informationa. Clockwise. b. Counterclockwise. c. Out of the board. d. Into the board. e. There will be no current induced in the wire
Physics 1B Winter 2012: Final Exam For Practice Version A 1 Closed book. No work needs to be shown for multiple-choice questions. The first 10 questions are the makeup Quiz. The remaining questions are
More informationCree XLamp XR-E LED PRODUCT FAMILY DATA SHEET FEATURES PRODUCT DESCRIPTION TABLE OF CONTENTS CLD DS-05 REV11
Cree XLamp XR-E LED PRODUCT FAMILY DATA SHEET CLD DS-5 REV11 PRODUCT DESCRIPTION FEATURES TABLE OF CONTENTS WWW. CREE.COM/XLAMP The XLamp XR-E LED is leading the LED lighting revolution with its unprecedented
More informationUnipolar and bipolar fatigue in antiferroelectric lead zirconate thin films and. evidences for switching-induced charge injection inducing fatigue
Unipolar and bipolar fatigue in antiferroelectric lead zirconate thin films and evidences for switching-induced charge injection inducing fatigue X.J. Lou and J. Wang Department of Materials Science and
More informationN-CHANNEL MOSFET Qualified per MIL-PRF-19500/592
,, & Compliant N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for
More informationC2D10120A Silicon Carbide Schottky Diode Zero Recovery Rectifier
Datasheet: 2D112 Rev. D 2D112A Silicon arbide Schottky Diode Zero Recovery Rectifier RM = 12 V = 1 A Q c = 61 n Features 12-Volt Schottky Rectifier Zero Reverse Recovery urrent Zero Forward Recovery Voltage
More informationATC 200 A Series BX Ceramic Multilayer Capacitors
200 A Series BX Ceramic Multilayer Capacitors Case A Size Capacitance Range (.055" x.055") 5 pf to 0.01 µf Low ESR/ESL Mid-K Rugged High Reliability Construction Extended VDC Available, the industry leader,
More informationP-CHANNEL MOSFET Qualified per MIL-PRF-19500/595
Compliant P-CHANNEL MOSFET Qualified per MIL-PRF-19500/595 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 2N7236U switching transistor is military qualified up to the JANTXV level for highreliability
More informationAPPROVAL SHEET FOR AL. ELECTROLYTIC CAPACITORS
NO : ED-A5540 TO : APPROVED APPROVAL SHEET FOR AL. ELECTROLYTIC CAPACITORS : BY: Series Description Part No. HV series, PLEASE RETURN US ONE COPY YOUR SIGED SPECIFICATION AFTER YOU APPROVED OF IT. APPROVED
More informationHigh Ohmic/High Voltage Resistors
High Ohmic/High Voltage Resistors VR68 A metal glazed film is deposited on a high grade ceramic body. After a helical groove has been cut in the resistive layer, tinned electrolytic copper wires are welded
More informationCommercial Chip - R3L 16Vdc to 5kVdc
Commercial Chip - R3L 16Vdc to 5kVdc A range of commercial MLC chip capacitors in R3L dielectric. This is a Class I temperature compensating N22 dielectric with an energy density that exceeds conventional
More informationReducing Film Thickness in Lead Zirconate Titanate Thin Film Capacitors
Reducing Film Thickness in Lead Zirconate Titanate Thin Film Capacitors by Vikram Rao and Ronald G. Polcawich ARL-TR-4338 December 2007 Approved for public release; distribution is unlimited. NOTICES Disclaimers
More informationAutomotive Grade Silicon Capacitors for Under the Hood Applications
Automotive Grade Silicon Capacitors for Under the Hood Applications Sébastien Jacqueline, Laurent Lengignon, Laëtitia Omnès IPDiA, 2 rue de la Girafe, 14000 Caen, France laetitia.omnes@ipdia.com, +33 (0)
More informationCERAMIC CHIP CAPACITORS
Example below indicates : SNPO series, 470 pf, 5%, 50 Volt, Tape/Reel packed, 0805 case size. (EXAMPLE) S N P O 4 7 1 J 0 5 0 T 2 Series Series Code: SNPO, SX7R, SZ5U, SY5V. Note: SNPO indicates COG(NPO)
More informationPHYSICS 122 Lab EXPERIMENT NO. 6 AC CIRCUITS
PHYSICS 122 Lab EXPERIMENT NO. 6 AC CIRCUITS The first purpose of this laboratory is to observe voltages as a function of time in an RC circuit and compare it to its expected time behavior. In the second
More informationECE 220 Laboratory 4 Volt Meter, Comparators, and Timer
ECE 220 Laboratory 4 Volt Meter, Comparators, and Timer Michael W. Marcellin Please follow all rules, procedures and report requirements as described at the beginning of the document entitled ECE 220 Laboratory
More informationProduct Specification
Product Specification NUMBER TDD2 HYBRID CAPACITOR ISSUE 01 REVISION E ECC-13-029 DATE 10-1-13 1.0 Scope This document contains specific electrical, mechanical, and environmental requirements and specifications
More informationAD Scope: Its specification applies to Radial Series Ceramic Capacitor. 2.How to order: CODE
1 1. Scope: Its specification applies to Radial Series Ceramic Capacitor. 2.How to order: CODE U AD10 R 102 K T Rated Voltage CodeT = 25 VDC U = 50 VDC Size Code : refer to the description in 3 Dielectric
More informationC2D10120A Silicon Carbide Schottky Diode Zero Recovery Rectifier
C2D112A Silicon Carbide Schottky Diode Zero Recovery Rectifier RM RM = 12 12 V V ( =135 C) = 1 = 14.5 A A Q c = 61 nc 61 nc Q c Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward
More informationPhysics 1520, Fall 2011 Quiz 3, Form: A
Physics 1520, Fall 2011 Quiz 3, Form: A Name: Date: Numeric answers must include units. Sketches must be labeled. All short-answer questions must include your reasoning, for full credit. A correct answer
More informationE40M Review - Part 1
E40M Review Part 1 Topics in Part 1 (Today): KCL, KVL, Power Devices: V and I sources, R Nodal Analysis. Superposition Devices: Diodes, C, L Time Domain Diode, C, L Circuits Topics in Part 2 (Wed): MOSFETs,
More information1 = k = 9 $10 9 Nm 2 /C 2 1 nanocoulomb = 1 nc = 10-9 C. = 8.85 #10 $12 C 2 /Nm 2. F = k qq 0. U = kqq 0. E % d A! = q enc. V = $ E % d!
Equations pv = nrt pv γ = constant (Q=0) Q = nc v ΔΤ (constant V) γ=c p /C v C p =C v +R C v = 3 R (monatomic ideal gas) 2 ΔU=Q-W R=8.3 J/molK ds = dq T W = " e = W Q H pdv e c =1" T C T H For H 2 O: L
More informationN-CHANNEL MOSFET Qualified per MIL-PRF-19500/592
,, and Compliant N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level
More informationATC 700 B Series NPO Porcelain and Ceramic Multilayer Capacitors
ATC 700 Series NPO Porcelain and Ceramic Multilayer Capacitors Case Size Capacitance Range (.1" x.1") 0.1 pf to 5 pf Low ESR/ESL Zero TCC Low Noise High Self-Resonance Rugged Construction Established Reliability
More informationHigh-ohmic/high-voltage resistors
FEATURES These resistors meet the safety requirements of: UL1676 (range 510 kω to 11 MΩ) EN60065 BS60065 (U.K.) NFC 92-130 (France) VDE 0860 (Germany) High pulse loading capability Small size. APPLICATIONS
More informationHigh Ohmic/High Voltage Resistors
High Ohmic/High Voltage Resistors A metal glazed film is deposited on a high grade ceramic body. After a helical groove has been cut in the resistive layer, tinned electrolytic copper wires are welded
More informationEE371 - Advanced VLSI Circuit Design
EE371 - Advanced VLSI Circuit Design Midterm Examination May 1999 Name: No. Points Score 1. 20 2. 24 3. 26 4. 20 TOTAL / 90 In recognition of and in the spirit of the Stanford University Honor Code, I
More information8-BIT SYNCHRONOUS BINARY UP COUNTER
8-BIT SYNCHRONOUS BINARY UP COUNTER FEATURES DESCRIPTION 700MHz min. count frequency Extended 100E VEE range of 4.2V to.v 1000ps to Q, Internal, gated feedback 8 bits wide Fully synchronous counting and
More informationCree XLamp CMA1825 LED
Cree XLamp CMA1825 LED Product family data sheet CLD-DS160 Rev 0A Product Description Cree s XLamp High Current LED Array family is optimized for best in class lumen output, efficacy and reliability at
More informationTITLE STATUS SPEC. NO. DATE PAGE NO. 3.5Φ EARPHONE JACK 4 POLEs / 2 SWITCH GENERAL SMT TYPE BS S-01
Specification TITLE STATUS SPEC. NO. DATE PAGE NO. 3.5Φ EARPHONE JACK 4 POLEs / 2 SWITCH GENERAL SMT TYPE BS123-000S-01 1 OF 4 1999/09/30 1. GENERAL SCOPE THIS SPECIFICATION COVERs THE GENERAL REQUIREMENTs
More informationReference Specification
Reference Specification DEB Series Lead Type Disc Ceramic Capacitors of Class 2 for General Purpose Product specifications in this catalog are as of Dec. 2017, and are subject to change or obsolescence
More informationProduct Specification HYCAP HIGH TEMP, EXTREME SHOCK &VIBRATION. Family >>> HCD HC2D HC3D Max mass 18g 15g 15.5g
CPCITOR HYCP HIGH TEMP, &VIBRTION DTE 3/14/16 1.0 SCOPE This document contains specific electrical, mechanical, and environmental requirements and specifications for double- sealed, axial- leaded hybrid
More informationMetallized Polyester PCMT 369 film capacitors
MKT RADIAL LACQUERED CAPACITORS (Dipped Type) Pitch 10.0/15.0/22.5/27.5 mm (reduced pitch ; 7.5mm) QUICK REFERENCE DATA Capacitance range (E12 series) Capacitance tolerance Rated voltage V Rdc Climatic
More information3.3V Power Supply Isolated Current Sensor with Common Mode Field Rejection
Fully Integrated Current Sensor IC 3.3V Power Supply Isolated Current Sensor with Common Mode Field Rejection Description The Senko Micro s provides economical and precise solutions for AC or DC current
More information