Efficient Light Scattering in Mid-Infrared Detectors
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2 Efficient Light Scattering in Mid-Infrared Detectors Arvind P. Ravikumar, Deborah Sivco, and Claire Gmachl Department of Electrical Engineering, Princeton University, Princeton NJ 8544 MIRTHE Summer Symposium June 15 16, 215
3 Selection Rules The Bane of Intersubband Detectors Intersubband transitions transitions within a quantum well Conduction band offset (ΔE c ) E c Intersubband Material B Interband Material A Material A Normal angle absorption inherently not possible. E v Z 5 8 K Z Photocurrent (pa) (TM) (TE) (TM) Polarization Angle
4 Normal Incidence Absorption Grating Coupled Photonic Crystals Corrugated-QWIPs Other lesser-known techniques: o Hole intersubband devices (band-mixing) o Quantum dot based infrared intersubband detectors Disadvantages: o Wavelength dependent each technique designed for a specific detector o Complicated fabrication techniques
5 Conventional Coupling Techniques: Limits 45 degree incidence Best case scenario Brewster s angle incidence (~ 17 ) I r θ 1 I n 1 R p = n 1 CCC θ 2 n 2 CCC θ 1 n 1 CCC θ 2 + n 2 CCC θ 1 T p = 1 R p µm I t θ 2 n 2 I t =.5 T p SSSθ 2 I I t =.5 T p SSS θ 1 n 2 I 31 µm At Brewster s incidence, T p = 1 and θ 1 = θ B, we get, I t ~.15 I For current measurement conditions (θ 1 = 45 ), we get I t ~.93 I Coupling can be improved with gratings for normal incidence!
6 Can Scattering Be Used For Absorption? Can we use the sloped side walls of a wet-etched mesa for light transmission? If so, how much light will be absorbed? Assumptions wet-etched ridges are in close proximity. We will consider the first (I t (1) ) and the second (It (2) ) transmission. I π 2 θ i I t (1) = I π 1 R p SSS θ n dθ I t (2) I t (1) π 2 I t (2) = I π R p 1 R p SSS θ n dθ
7 Normal Incidence Absorption With Spirals And Waves Modeling sidewall slope as a quadrant of an ellipse, we get a total transmission, I t ~.15 I. Increase the number of sidewalls for light absorption SPIRALS and WAVES Side-view A oo Figure of merit can be given as, FFF = I t A e and the electrical device area, respectively. where A oo and A e are the optical area
8 Scattering Assisted Absorption Devices ~.5 mm diameter spirals For comparison, use standard mesa devices 485 µm 31 µm
9 Quantum Cascade Detector QC Detectors are unipolar photovoltaic infrared detectors. Detection wavelength is decoupled from the conduction band offset..4 E c A 2 B 1 A 1 C 1 D 1 F 1 Energy (ev) µm 6.5 µm 1 period ~ 3 nm Quantum Cascade Detectors Position (Angstroms)
10 QC Detector Characterization Standard device geometry measured at 45 degrees Dark current measurements device resistance, noise properties o Room temperature 5 Ω Current (A) 1E-1 1E-2 1E-3 1E-4 1E-5 1E-6 Standard Mesa 3 K 8 K Eact ~ 8 mev Photocurrent (a.u.) K 1E-7 1E Voltage (V) 1 2 K Wavenumber (cm -1 )
11 Normal Incidence Photoresponse Photovoltage signal at normal incidence comparable to 45 degree incidence devices Enhanced normal incidence absorption in wavy detectors 2 15 T = 86 K 16 V_bias = Spiral Backside polished Wavy 14 Normal 12 V sig (mv) 1 V sig (mv) Spiral, normal Wavy, normal Mesa, 45 deg Mesa, normal V bias (mv) Temperature (K)
12 Dark Current Characteristics Current (A) Similar activation energy, Eact ~ 8 mev identical quantum design Higher resistance observed for spiral and wavy detectors increased in-plane resistance Method to improve Detectivity (signal to noise) without affecting responsivity 1E+ 1E-2 1E-4 1E-6 1E-8 Spiral detectors 1E Voltage (V) Resistance at bias (R ) 1E+8 1E+7 1E+6 1E+5 1E+4 1E+3 1E+2 1E+1 Temperature (K) Spiral detectors E act = 8 mev Resistance at bias (R ) /Temperature (K -1 ) Temperature (K) E+5 Mesa devices 1E+4 1E+3 1E+2 1E+1 E act ~ 8 mev /Temperature (K -1 )
13 Normal Incidence Photocurrent Spectra 86 K, bias dependence Intensity (a.u.) Spiral: N 86 K V.1 V.2 V.5 V Intensity (a.u.) Wavy: N 86 K 1. V.5 V.2 V.1 V V 25 V, Temperature dependence Intensity (a.u.) Wavenumber (cm -1 ) Spiral: N V b = 18 K 16 K 14 K 12 K 1 K 86 K Intensity (a.u.) Wavenumber (cm -1 ) 75 5 Wavy: N V b = 18 K 16 K 14 K 12 K 1 K 86 K Wavenumber (cm -1 ) Wavenumber (cm -1 )
14 Spectral Comparison Identical spectral widths Small shift in peak photocurrent signal o Measurement resolution o Change in resistance Intensity (a.u.) Mesa: 45 deg V b = 18 K 16 K 14 K 12 K 1 K 86 K Wavenumber (cm -1 ) Intensity (a.u., normalized) K 54 cm -1 wavy spiral mesa 45 λ p-45 = 1587 cm -1 W p-45 = 18 cm -1 λ p-sw = 1527 cm -1 W p-sw = 17 cm Wavenumber (cm -1 )
15 Conclusions Simple method to achieve normal incidence absorption in intersubband infrared detectors Wavelength-independent Standard optical lithography techniques Strong normal-incidence absorption standard packaging Spiral and Wavy detectors performance comparable with standard 45 degree mesa Responsivity similar order of magnitude Device resistance Larger by 3 4 orders Detectivity higher by 1 2 orders of magnitude Future work Optimization of spiral and wavy structures for maximum absorption Theoretical limits to structural improvements
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