Failure Analysis Report
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1 Failure Analysis Report TI Information - Selective Disclosure Device Analysis Services FA QEM-CCR Customer: SERIAL SYSTEM (DSTR) Assy Site: Customer Tracking ID: Fab Site: Customer Part ID: Technology: C021 Customer Contact: leizhigang Analyst: Asma Haddoud Device Type: TUSB4041IPAPRQ1 TI Contact: Lisa Liu(CQE SZ) Qty Submitted: 1 Flow Type: Customer Return Date Submitted: Reviewer: Approval: Thym Legba. Failure Analysis Customer Reported Failure Mode TI Failure Description What effect does the defect or damage cause? Where and what is the defect/damage? Did the identified physical defect/damage explain the TI reported failure mode? Results Summary Customer: Coagent; Failed step: NPI failure description: pin 33 and pin 34(USB1 D+/-) can not recognize US device; Leakage on pin 33. Silicon damage at OBIRCH site. Yes. Failure analysis is performed as a technical service to both customers and users of microcircuits manufactured by Texas Instruments, Inc. (TI). Failure Analysis Reports and Quality Event Manager (QEM) Reports are considered proprietary to TI, and are for selective disclosure to third parties only as authorized by TI. Consequently, they are marked, TI Information - Selective Disclosure. The information conveyed in these reports does not alter TI s warranty or other terms and conditions of sale. Unless otherwise specifically noted, the report is not an authorization to return products. Application advice is provided AS IS. The information provided herein may change if additional facts are discovered.
2 TI Cust. Lot Trace Unit # Unit # Code 1 73AF26W Symbolization Wafer Fab Lot # Assembly Lot # Customer Reported Problem Description: Customer: Coagent; Failed step: NPI failure description: pin 33 and pin 34(USB1 D+/-) can not recognize US device; TI Problem Description: Silicon damaged was observed; Package Analysis: Package inspection showed no obvious sign of: Mechanical damage, crack, delamination, bonding issue nor die attach anomaly. External Package Examination: Figure 1. Package optical. No anomaly. *Important Note: The information provided herein may change if additional facts are discovered. Page 2 of 6
3 X-Ray Analysis: Figure 2. Package X-rays. No anomaly. Scanning Acoustic Microscopy (SAM): Figure 3. Package TSAM/CSAM. No anomaly/delamination above die area. *Important Note: The information provided herein may change if additional facts are discovered. Page 3 of 6
4 Electrical Characterization: A basic pin to pin curve trace was performed on the RMR unit and compared to a good unit. Anomalous path was observed on pin 33 when curve traced against other pins. The pin showed a leakage through the origin. Figure 4. Electrical characterization. 33 to all 33 to 34 Decapsulation: Unit was decapsulated using laser ablation to partially expose the bond wire, then using a mixture of acids to expose the die surface. Electrical integrity of the device was maintained post decapsulation during bench testing. Figure 5. Die optical. No anomaly. *Important Note: The information provided herein may change if additional facts are discovered. Page 4 of 6
5 Failure Isolation: Optical Beam Induced Resistance Change (OBIRCH) was performed on the RMR unit and a good unit for comparison while exercising the leakage on pin 33. One additional/saturated site was observed. Figure 6. PEM. correlation Figure 7. PEM. RMR. *Important Note: The information provided herein may change if additional facts are discovered. Page 5 of 6
6 Deprocessing and Visual: Unit was polished mechanically, layer by layer, down to contact level for optical inspection at each level. Planarity of the die surface was compromised during polishing which made optical inspection at every level difficult in the area of interest. Unit was then deprocessed straight t to silicon using HF acid. Optical inspection of the die using scanning electron microscope (SEM) showed an anomaly at Silicon around OBIRCH site s area. The anomaly looks like damage from thermal stress. Figure 8. Die optical. Anomaly observed at Silicon. Conclusion: Leakage on pin 33. Silicon damage at OBIRCH site. Note 1: Due to digital image capture, the magnification is not calibrated nor is the aspect ratio maintained. Not all tools provide a means recorded in the image for calibrating the measurements. When a calibration marker is supplied in the image, the measurements may be calibrated in the direction of the marker. *Important Note: The information provided herein may change if additional facts are discovered. Page 6 of 6
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CD54/74HC393, CD54/74HCT393 Data sheet acquired from Harris Semiconductor SCHS186A September 1997 - Revised May 2000 High Speed CMOS Logic Dual 4-Stage Binary Counter /Title CD74 C393 D74 CT39 ) Subect
CD74HC195. High Speed CMOS Logic 4-Bit Parallel Access Register. Features. Description. Ordering Information. PInout. [ /Title (CD74 HC195 ) /Subject
Data sheet acquired from Harris Semiconductor SCHS165 September 1997 High Speed CMOS Logic 4-Bit Parallel Access Register [ /Title (CD74 HC195 ) /Subject High peed MOS ogic -Bit aralel ccess egiser) /Autho
TRENCHSTOP TM RC-Series for hard switching applications. IGBT chip with monolithically integrated diode in packages offering space saving advantage
IGBT chip with monolithically integrated diode in packages offering space saving advantage Features: TRENCHSTOP TM Reverse Conducting (RC) technology for 600V applications offering: Optimised V CEsat and
Low-Voltage Single SPDT Analog Switch
Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type. (P Channel U MOS IV/N Channel U-MOS III) TPC8405. Rating P Channel N Channel
TPC85 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications (P Channel U MOS IV/N Channel U-MOS
STATIC GAS MONITOR Type SGM/DEW Revision A of 20 aprile 2016
APPLICATIONS Moisture monitoring of air or gas (SF6) Suitable for indoor or outdoor Industrial, medical or aerospace fields HIGHLIGHTS High voltage circuit breakers commonly used for distribution and transmission
Imaging Carbon materials with correlative Raman-SEM microscopy. Introduction. Raman, SEM and FIB within one chamber. Diamond.
Imaging Carbon materials with correlative Raman-SEM microscopy Application Example Carbon materials are widely used in many industries for their exceptional properties. Electric conductance, light weight,
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3497
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) High Power Amplifier Application Unit: mm High breakdown voltage: V DSS = 8 V Complementary to SJ68.. MAX. 5.9 MAX. Ф. ±... 9..5. ±..
Powered-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)
Powered-off Protection,, 1. V to 5.5 V, SPDT Analog Switch (:1 Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for 1. V to 5.5 V operation with