Quality and Reliability Report

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1 Quality and Reliability Report GaAs Schottky Diode Products rev C Marki Microwave Inc. 215 Vineyard Court, Morgan Hill, CA Phone: (408) / FAX: (408) info@markimicrowave.com Proprietary: This Document was originated by and is the property of Marki Microwave. Unauthorized disclosure is prohibited

2 1. Summary This document describes the qualification results for the GaAs Schottky Diode Process assembly and materials. The reliability data was obtained through the performance of specified accelerated stress tests described. This summary shows the devices are qualified and have completed qualification testing. This report meets Class H and Class K reliability requirements and is released for production. Products within family utilizing the same assembly materials and processes are qualified by similarity. In addition to the base part number, this report covers the L & H Barrier height options and the CH-2(chip) and S package option. Base Part Number MMX-XXXX MMD-XXXX MMIQ-XXXX NLTL-XXX Description MMIC Mixer MMIC Double MMIC I/Q Mixer MMIC Non-Linear Transmission Line 2. Scope The qualification was performed to validate the reliability of GaAs Schottky Diode Process product assembly. The results of this report are not limited to the specific product described herein; they apply to a family of products designed at Marki Microwave which use the same assembly materials and processes. 3. Product Description and Information The GaAs Schottky Diode Process assemblies use Schottky diodes. This device consists of multiple junction connected where the diode junctions are formed to assure close matching of the electrical characteristics including forward voltage, capacitance, and slope resistance. These devices are usable on all Marki Microwave Hybrid products where applicable. Assembly and Package Information Package Style: Wire Bond: Die Attach: Semiconductor: S 0.8 mil Gold wire, thermo-compression bond Silver Epoxy Die Attach GaAs 4. Product Qualification Requirements Qualification testing has been performed to validate the reliable operation of Marki Microwave GaAs Schottky Diode Process products. Tests are included to specifically address failure mechanisms related to elevated temperature, temperature cycling, constant acceleration and applied electrical bias.

3 4.1. Qualification Plan Parts are available as Class H or as Class K, both 100% Tac Probed and Visually Inspected. 100% Tac Probe 100% Visual Class H Class K Sub Group 1 Test over Temperature Sub Group 2 Bond Pull Sub Group 3 Die Shear Sub Group 1 Stabilization Bake Temperature Cycling Constant Acceleration Burn-in Test Steady-State Life Test over Temperature Sub Group 2 Bond Pull Sub Group 3 Die Shear Sub Group 4 SEM 4.2 Class K Flow and Conditions Test Method Reference MIL-STD-883 Time / Cycles Qty Condition Subgroup 1 1 Stabilization Bake Method Hours Ta = 150 o C 2 Temperature Cycling Method Cycles Condition C (-65 o C, 150 o C) 3 Constant Acceleration Method Minute 10 Y1 3,000 g's Y1 direction 4 Burn-in Test Method Hours Ta = 125 o max* 5 Steady-State Life Method Hours Ta = 125 o max* 6 Test over Temperature Data Sheet NA -55 o C, 25 o C, 100 o C Subgroup 2 Bond Pull Method 2011 > 2.3 Grams mil Au wire Subgroup 3 Die shear, chip size by Method 2019 > 1.0kgf x 10(-4) Subgroup 4 SEM Method * +/- 6.0mA +/- 4.5mA 5GHz

4 5.0 Qualification Results 5.1 Summary of Test Results Test Method PN Lot Qty Date Results Subgroup 1 Class K Stabilization Bake Temperature Cycling (TC) Constant Acceleration Burn in Test Steady State Life Subgroup 2 Bond Pull (4 die, 10 bond wires) Subgroup 3 Die shear Subgroup 4 SEM MM1K 1140HCH 2 901E 10 11/14/17 Pass MM2K 0530LCH 2 202E 10 07/30/18 Pass MM1K 1140HCH 2 901E 10 11/20/17 Pass MM2K 0530LCH 2 202E 10 08/01/18 Pass MM1K 1140HCH 2 901E 10 12/06/17 Pass MM2K 0530LCH 2 202E 10 08/15/18 Pass MM1K 1140HCH 2 901E 10 12/26/17 Pass MM2K 0530LCH 2 202E 10 09/04/18 Pass MM1K 1140HCH 2 901E 10 02/06/18 Pass MM2K 0530LCH 2 202E 10 10/23/18 Pass MM1K 1140HCH 2 901E /07/18 Pass MM2K 0530LCH 2 202E 10 04/12/18 Pass MM1H 0320LCH 2 121D 10 01/25/18 Pass MM1H 1140HCH 2 901E /12/18 Pass MM1K 1140HCH 2 901E /9/18 Pass MM2K 0530LCH 2 202E 2 04/11/18 Pass MM1H 0320LCH 2 121D 2 01/30/18 Pass MM1H 1140HCH 2 901E /18/18 Pass MM1K 1140HCH 2 901E 4 11/22/17 Pass MM2K 0530LCH 2 202E 4 04/20/18 Pass 5.2 FIT Calculation λ (FIT) MTTF (hr) MTTF (yr) Use at E+07 9,622 25C E C E C *based on the complete family of mixer die in addition to those qualified to Class H and K

5 5.3 Typical Bond Pull 5.4 Typical Die Shear

6 5.5 Typical SEM MM1K-1140HCH-2 MM2K-0530LCH-2

7 5.5 Typical Delta Change after Life Test Pre Life Test MM1K-1140HCH-2 Post Life Test Pre Life Test MM2K-0530LCH-2 Post Life Test

5.6 Typical Conversion Loss Change over Temperature MM1K-1140HCH-2-55 25C 125C MM2K-0530LCH-2-55 25C

4 Typical Vf Change over Temperature (for products that it can be measure on) 25C Post Life Test 55C 25C

00% Control 2 0.773 0.769 0.699 0.696 0.624 0.624 0.001 0.003 0.14% 0.43% Control 3 0.766 0.769 0.696 0.698 0.

772 0.771 0.702 0.701 0.629 0.629 0.004 0.004 0.57% 0.57% 6 0.769 0.761 0.701 0.694 0.628 0.622 0.004 0.004 0.57% 0.58% 7 0.

57% 9 0.772 0.772 0.703 0.699 0.629 0.627 0.005 0.004 0.72% 0.58% 10 0.78 0.78 0.711 0.71 0.637 0.637 0.005 0.005 0.71% 0.

8 5.6 Typical Conversion Loss Change over Temperature MM1K-1140HCH C 125C MM2K-0530LCH C 125C 5.4 Typical Vf Change over Temperature (for products that it can be measure on) 25C Post Life Test 55C 25C +100C Delta mv SN Vf+ Vf Vf+ Vf Vf+ Vf Vf+ Vf % % % 0.00% Control % 0.43% Control % 0.29% % 0.29% % 0.57% % 0.58% % 0.43% % 0.57% % 0.58% % 0.71% % 0.57% % 0.42% Ave 55C 25C 100C mv

9 6. Analysis of Results 6.1 Stabilization Bake / High Temperature Storage Life Description The high temperature storage test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure mechanisms and time-to failure distributions of solid state electronic devices. During the test, accelerated stress temperatures are used without electrical conditions applied. MIL-STD-883 Method 1032 is used as a guideline. Results No evidence of thermally activated failures were found during this test. 6.2 Temperature Cycling Description Unbiased devices are exposed to sudden extreme temperature changes. This accelerated stress test simulates equipment that is operated intermittently at low temperatures. Devices are exposed to a high temperature for a time long enough to assure a stable temperature is reached by all the samples (typically 10 to 15 minutes) and then transferred to a low temperature and held for the same length of time. After temperature cycling is completed. MIL-STD- 883 Method 1010 is used as a guideline. Results No failures were observed either visually or electrically. This indicates that the mechanical assembly of the device can withstand extreme temperature changes with no degradation in performance or construction. It also indicates that no problems exist due to the internal mechanical stresses between the Die attach, Wire bond, Package and die. 6.3 Constant Acceleration Description The constant acceleration test is used to determine the effect on semiconductor devices of a centrifugal force. This test is an accelerated test designed to indicate types of structural and mechanical weaknesses not necessarily detected in shock and vibration tests. MIL-STD-883 Method 2001 is used as a guideline. Results No failures were observed. This indicates that the structural integrity of the mechanical assembly of the device is sound. 6.4 Burn In Description The burn-in test is performed for the purpose of screening or eliminating marginal devices, those with inherent defects or defects resulting from manufacturing aberrations which cause time and stress dependent failures. In the absence of burn-in, these defective devices would be expected to result in infant mortality or early lifetime failures under use conditions. Therefore, it is the intent of this screen to stress microcircuits at or above maximum rated operating conditions or to apply equivalent screening conditions, which will reveal time and stress dependent failure modes with equal or greater sensitivity. Results Pass 6.4 High Temperature Operating Life (HTOL) Description This stress is used to identify any failure mechanisms accelerated by DC bias and elevated temperature that could occur during the lifetime of the product under test. Typical failure mechanisms that may occur include gate oxide breakdown, ionic contamination, and electromigration for silicon (Si) technologies, or gate sinking, ohmic contact degradation, and trap generation for gallium arsenide (GaAs) and gallium nitride (GaN) technologies. Process and/or assembly defects may be detected by this test in either technology. Devices are biased and operated at junction temperatures between 125 C and 160 C. MIL-STD-883 Method 1015 is used as a guideline. Results No evidence of wearout failure was found during this test. The results indicate that the devices are stable and reliable. 7.0 Reference Documents 7.1 MIL_STD High Temperature Storage Life 7.2 MIL_STD Temperature Cycling 7.3 MIL_STD Constant Acceleration 7.4 MIL_STD Burn-in 7.4 MIL_STD Steady Sate Life 7.5 MIL_STD Bond Pull 7.6 MIL_STD Die Shear

10 7.7 MIL_STD Scanning Electron Microscope SEM 7.8 MIL-STD-883 Department of Defense Test Method Standard, Microcircuit 7.9 MIL-PRF Performance Specification Semiconductor Devices 7.10 MIL-PRF Performance Specification - Hybrid Microcircuits Revision History Rev A Feb 16, 2018 Rev B July 9, 2018 Rev C Oct 23, 2018 Copyright 2018, Marki Microwave, Inc. All rights reserved. No part of this document may be reproduced in any form or means, without express permission from Marki Microwave. Marki Microwave Inc. reserves the right to make changes in its products, product flows, or information contained herein without notice. Marki Microwave makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Marki Microwave assume any liability whatsoever arising out of the use of or application of any product. No license for use of intellectual property (patents, copyrights, or other rights) owned by Marki Microwave or other parties is granted or implied.

xr SiC Series 1200 V Schottky Diode Platform 15A, 10A, 5A / 30A, 20A

xr SiC Series 1200 V Schottky Diode Platform 15A, 10A, 5A / 30A, 20A 12 V Schottky Diode Platform 15A, 1A, 5A / 3A, 2A 12 V xr SiC Series 12 V-15A, 1A, 5A / 3A, 2A Schottky Diodes Product Qualification Report Summary This report delineates the reliability and qualification