COMS- MEMS testkey for residual stress extrac7ng at wafer- level

Transcription

1 COMS- MEMS testkey for residual stress extrac7ng at wafer- level Wan- Chun Chuang Mechanical & Electro- Mechanical Engineering Na5onal Sun Yat- sen University

2 Outline Introduc5on State of the Art Technology Electromechanical Behavior of the Testkeys Bridge- type Testkey Can5lever- type Testkey Wafer- Level Mechanical Proper5es Extrac5ng Algorithm Comparison with M- TEST (100) Single Crystal Silicon (110) Single Crystal Silicon Experiment Sample Prepara5on Pull- in Voltage Detec5ng Capacitance- Voltage Measurement The Pull- in Voltage Results of Bridge- type Testkey The Pre- deforma5on of Can5lever- type Testkey Extrac5ng Mechanical Proper5es of Structural Material Dimension Effects of Testkeys Conclusions - -

3 CMOS-MEMS devices Introduc5on thin film Mechanical property E, σ, ν. The performance of the devices depends on the cons5tu5ve proper5es of the thin film made by CMOS process. It is known that the proper5es of thin- film are different from bulk material, depending on the deposi5on process. The material proper5es, such as Young s modulus and residual stress, should be controlled by the real- 5me monitoring to ensure the repeatability for each device. - 3-

4 Outline Introduc5on State of the Art Technology Electromechanical Behavior of the Testkeys Bridge- type Testkey Can5lever- type Testkey Wafer- Level Mechanical Proper5es Extrac5ng Algorithm Comparison with M- TEST (100) Single Crystal Silicon (110) Single Crystal Silicon Experiment Sample Prepara5on Pull- in Voltage Detec5ng Capacitance- Voltage Measurement The Pull- in Voltage Results of Bridge- type Testkey The Pre- deforma5on of Can5lever- type Testkey Extrac5ng Mechanical Proper5es of Structural Material Robustness Discussion Sensi5vity Analysis for Pull- in Voltage Measurement Dimension Effects of Testkeys Conclusions - 4-

5 State of the Art Technology Common Destructive Testing Methods Nano indenta5on system Micro tensile test Ref.[1] : h^p://nanost.ntu.edu.tw/ get_equ.asp?id=36 Ref.[] : W. N. Sharpe et al.(1997) The aforemen5oned techniques require addi5onal measurement or complicated sample prepara5on process so that they are not compa5ble with IC metrology technologies. - 5-

6 Comparison with Tes5ng Methods Method Observation Destructive Operation & Observation Micro Tensile Test Strain Gauge Manual Laser-Induced Ultrasonic Wave Electrical Manual Curvature Method Optical reflection analysis Manual Hole Drilling Stress relaxation within the hole Manual Laboratory X-ray Diffraction Atomic strain gauge Manual Neutrons diffraction Atomic strain gauge Manual Magnetic and Electrical Techniques Electrical Automatic Ultrasonics Stress changes with wave velocity Manual Photoelastic Methods Electrical Manual Nanoindentation Depth Manual Bent-beam Resistance Automatic M-Test Current and Voltage Automatic Test Structure Focused Ion Beam System Wafer- Level Tes5ng : 1.non- destruc5ve,.integrate with IC fabrica5on process electric drive, electric detection (best!) IC Measurement System (4-point probe station, Network analyzer, LCR meter) Deflection Observed by Interferometer Interferometric Strain/Displacement Gauge Manual Automatic

7 Objec5ves A method for extrac5ng mechanical property at wafer level non- destruc5ve input :electrical signal, output: electrical and op5cal signal non- contamina5ve How to achieve the objec5ve? CMOS-MEMS testkey Electromechanical behavior for testkey structures Algorithm for extracting the mechanical properties Wafer level tes5ng - 7- Young s modulus Residual stress

8 y Residual Stress of Thin Film h ( y σ ) total σo + σ1 h / σ total : residual stress, σ 0 : mean stress, σ 1 : gradient stress. h: thickness of thin film, -h/<y<h/ Ref.[3] : W Fang, J.A. Wickert et al. (1996) - 8-

9 Outline Introduc5on State of the Art Technology Electromechanical Behavior of the Testkeys Bridge- type Testkey Can5lever- type Testkey Wafer- Level Mechanical Proper5es Extrac5ng Algorithm Comparison with M- TEST (100) Single Crystal Silicon (110) Single Crystal Silicon Experiment Sample Prepara5on Pull- in Voltage Detec5ng Capacitance- Voltage Measurement The Pull- in Voltage Results of Bridge- type Testkey The Pre- deforma5on of Can5lever- type Testkey Extrac5ng Mechanical Proper5es of Structural Material Robustness Discussion Sensi5vity Analysis for Pull- in Voltage Measurement Dimension Effects of Testkeys Conclusions - 9-

10 Electromechanical Model Formula5on Deriving Micro Device Process Total System Energy Assumed Mode Method Minimum Energy Method Full-Order and Fourth-Order Model - 10-

11 Energy Expressions Total System Energy U=Mechanical strain energy+electrical poten8al energy Mechanical strain energy Electrical poten5al energy Lσ bh dw L EI d w LεV b h b U = dx+ dx dx dx g w g w h dx 0 * ** * ** * The extensional strain energy * Uniform field ** The bending strain energy ** Fringing field L w(x) x z g ground L : length b : width b h : thickness g : ini5al gap V : driving voltage w(x) : posi5on- dependent deflec5on - 11-

12 Assumed Mode Method w( x) = ηφ( x) The modal participation factor The 1 st natural mode of fixed- fixed beam Assumed deflection shape function [ cosh( λx) cos( λx) ] ζ [ sinh( λx) sin( λx) ] φ( x) = ( λl) cos( λl) ( λl) sin( λl) cosh where ζ = sinh cos( λl) cosh( λl) 1= 0-1-

13 Minimum Energy Method Model Solu5on- full order system in sta5c- stable equilibrium du dη = 0 at the transi5on from a stable to an unstable equilibrium = 0 ( L σ! dη 0 bh φ! dx) + (! L EI φ!! dx) 0 0 V PI = ε L$ bφ (g ηφ) h0.3 φ ' & )dx 0 % 3 (g ηφ).3 ( d U η = 0 0 L L 0.3 bφ 0.761h φ + dx 1.3 g ηφ g ηφ ( ) ( ) 0.3 bφ 0.936h φ + dx 3.3 g ηφ g ηφ ( ) ( ) solved by itera5ve method - 13-

14 Approximate Analy5cal Solu5on to Pull- in Voltage Expand by Taylor s series with respect to the ini5al equilibrium posi5on, i.e. w = 0 ' ) σ! bh U = 0! dw $ L 0 ) # & ) " dx % ( εv! L b # 1 g # " +! EI! # # " d w dx $ *, &, dx & %, + g w + 1 g 3 w + 1 g 4 w3 + 1 g 5 w4 $ & & dx % εv + L dx εv! 3.31h w + g 0.3 g 1.3 g.3 w g 3.3 w $ L # w4 & 0 # 4 g 4.3 & dx " % εv 0.73! b $ 0.3 L 0 # & dx " h% - 14-

15 Minimum Energy Method system in sta5c- stable equilibrium V in = Fourth- Order Model L!σ 0 bh( φ!) dx + E! L I( φ!! ) dx 0 ( ) ε c 1 + c η in + 3c 3 η in 0 du dη = 0 at the transi5on from a stable to an unstable equilibrium = 0 d dη U η PI = 3 '! ) 1 )# " 4 ( c 0 c 3 $ % &! # 1 " 6 c c 3 3 $ * ', & %, +! ) 1 )# 4 + (" c 0 c 3 $ % &! # 1 " 6 c c 3 3 $ *!, & 8 1 %, # 6 + " '! 1 c $ + 0 # " 4 c 3 % & 1 3! c $ * ' ), ) # " 6 c & ( 3 %,! 1 c $ 0 # 4 c + " 3 % & 1 3! c $ * ), # " 6 c & 8 1 6! c $! 3 ) ( 3 %, # 6 c & # 1 + " 3 % " 6 c c 3 6 $ & % c c 3 $ & % 0.3 L b h c0 = φdx g g 0.3 L b h c1 = φ dx g g 0.3 L 3b h 3 c = + φ dx g g 0.3 L 4b 1.143h 4 c3 = + φ dx g g - 15-

16 Outline Introduc5on State of the Art Technology Electromechanical Behavior of the Testkeys Bridge- type Testkey Can5lever- type Testkey Wafer- Level Mechanical Proper5es Extrac5ng Algorithm Comparison with M- TEST (100) Single Crystal Silicon (110) Single Crystal Silicon Experiment Sample Prepara5on Pull- in Voltage Detec5ng Capacitance- Voltage Measurement The Pull- in Voltage Results of Bridge- type Testkey The Pre- deforma5on of Can5lever- type Testkey Extrac5ng Mechanical Proper5es of Structural Material Robustness Discussion Sensi5vity Analysis for Pull- in Voltage Measurement Dimension Effects of Testkeys Conclusions - 16-

17 y Can5lever- type Testkey y x c σ 1 x y(l) L elas5c flexure formula [Ref] y Mc σ 1 =, σ x I My = I M h ML c =, y( L) = EI hey( L) σ1 = L σ1l = Eh x L elas5c curve of a can5lever beam y Mx EI ( x) =, y( L) ML = EI Ref : F. P. Beer, E. R. Johnston, and J. T. DeWolf, Mechanics of materials. New York: McGraw- Hill,

18 Outline Introduc5on State of the Art Technology Electromechanical Behavior of the Testkeys Bridge- type Testkey Can5lever- type Testkey Wafer- Level Mechanical Proper5es Extrac5ng Algorithm Comparison with M- TEST (100) Single Crystal Silicon (110) Single Crystal Silicon Experiment Sample Prepara5on Pull- in Voltage Detec5ng Capacitance- Voltage Measurement The Pull- in Voltage Results of Bridge- type Testkey The Pre- deforma5on of Can5lever- type Testkey Extrac5ng Mechanical Proper5es of Structural Material Robustness Discussion Sensi5vity Analysis for Pull- in Voltage Measurement Dimension Effects of Testkeys Conclusions - 18-

19 Extrac5ng Mechanical Property σ V in =! L 0 bh( φ!) dx +! L E I( φ!! ) dx 0 0 ε c 1 + c η in + 3c 3 η in = S!σ 0 + B! E ( ) L bh( φʹ ) dx 0 ( c1 + c in + 3c3 in ) S = ε η η L B = ε η η ( I φʹ ʹ ) dx 0 ( c1 + c in + 3c3 in ) Measure V pull- in- 1,V pull- in- Wafer- Level Mechanical Proper5es Extrac5ng!#!σ " 0 $#!E % ( # & '# = * S 1 B 1 * ) S B + - -, 1! # " # $ % V pull in 1 # & V pull in # ' To derive σ 0, E b: width, h: thickness, L: length, I : area inertia moment of beam cross-section ε: the permeability of dielectric medium, Φ: the first natural mode of a beam clamped at the both ends - 19-

20 Bridge- type Testkey (1) Bridge-type Testkey- Young s modulus (E), mean stress (σ 0 ) pass3 pass 10 pass1 SiO M6 Via56 M5 Via45 M4 M3 Via34 Via3 Via1 M1 contact Poly M6 Via56 M5 Via45 M4 Via34 M3 Via3 Via1 M1 contact Poly pass1 Upper electrode M Gap=1.93 Bottom electrode Poly Substrate TSMC 1P6M process M6 Via56 M5 Via45 M4 Via34 M3 Via3 Via1 M1 Poly contact pass pass3 pass 10 pass1 SiO!# " $# S!σ 0!E = B = % ( # & '# = * S 1 B 1 * ) S B L bh( φʹ ) dx 0 ( c1 + c in + 3c3 in ) ε η η L + - -, ( I φʹ ʹ ) dx 0 ( c1 + c in + 3c3 in ) ε η η 1! # " # $ % V pull in 1 # & V pull in # ' Poly Metal PAD b: width, h: thickness, L: length, I : area inertia moment of beam cross-section ε: the permeability of dielectric medium Φ: the first natural mode of a beam clamped at the both ends - 0-

21 Can5lever- type Testkey () Cantilever-type Testkey-Gradient stress (σ 1 ) pass3 pass 10 pass1 SiO M6 Via56 M5 Via45 M4 M3 Via34 Via3 Via1 M1 contact Poly M6 Via56 M5 Via45 M4 M3 Via34 Via3 M Via1 M1 contact Poly pass1 Upper electrode Umax Bottom electrode Poly Substrate TSMC 1P6M process M6 Via56 M5 Via45 M4 Via34 M3 Via3 M Via1 M1 Poly contact pass pass3 pass 10 pass1 SiO σ = heu max 1 L h: thickness, L: length, u max : the pre-deformation at the free end Poly Metal PAD - 1-

22 (1)Bridge-type testkey Algorithm Measure V PI1, V PI of two bridge beams with different length () Cantilever-type testkey!# " $#!σ 0!E % ( # & '# = * S 1 B 1 * ) S B + - -, 1! # " $# V PI1 V PI % # & '# Measure the maximum deflection at the free end (u max ) of cantilever beam Young s modulus (E) Mean stress (σ 0 ) E σ = heu max 1 L - - Gradient stress (σ 1 )

23 Outline Introduc5on State of the Art Technology Electromechanical Behavior of the Testkeys Bridge- type Testkey Can5lever- type Testkey Wafer- Level Mechanical Proper5es Extrac5ng Algorithm Comparison with M- TEST (100) Single Crystal Silicon (110) Single Crystal Silicon Experiment Sample Prepara5on Pull- in Voltage Detec5ng Capacitance- Voltage Measurement The Pull- in Voltage Results of Bridge- type Testkey The Pre- deforma5on of Can5lever- type Testkey Extrac5ng Mechanical Proper5es of Structural Material Robustness Discussion Sensi5vity Analysis for Pull- in Voltage Measurement Dimension Effects of Testkeys Conclusions - 3-

24 Comparison with M- TEST - (110) and (100) Single Crystal Silicon Geometrical parameters of the mono- crystalline silicon beam samples and the measured pull- in voltages [Ref]. Parameters Values Permeability of free space ε (F/m) Initial gap g (µm) 1.05 Beam width b (µm) 50 Beam thickness h (µm).94 Length L of group 1 (ΔL=5µm) Measured pull-in voltage V PI (V) Length L of group (ΔL=75µm) Measured pull-in voltage V PI (V) Group1:(100) Single Crystal Silicon Group:(110) Single Crystal Silicon Ref :P. M. Osterberg and S. D. Senturia, "M- TEST: A test chip for MEMS material property measurement using electrosta5cally actuated test structures," Journal of Microelectromechanical Systems, vol. 6, pp , Jun

25 Comparison with M- TEST - (110) and (100) Single Crystal Silicon (100) Single Crystal Silicon Length difference (µm) Length (µm) The extracted values by this work M-test [9] ΔL L 1 L E (GPa) σ 0 (MPa) E (GPa) σ 0 (MPa) ±4 10± Average (X ave ) Standard Deviation (ΔX) ΔX/ X ave 0.31% 1.45%.90% 0.00% (110) Single Crystal Silicon Length Difference (µm) Length (µm) The extracted values by this work M-test [9] ΔL L 1 L E (GPa) σ 0 (MPa) E (GPa) σ 0 (MPa) ~tenth 168±6 10±1 Average (X ave ) Standard Deviation (ΔX) ΔX/ X ave 0.31% 0.87% 3.57% 10.00% ~tenth Ref[9] :P. M. Osterberg and S. D. Senturia, "M- TEST: A test chip for MEMS material property measurement using electrosta5cally actuated test structures," Journal of Microelectromechanical Systems, vol. 6, pp , Jun 1997.

26 Outline Introduc5on State of the Art Technology Electromechanical Behavior of the Testkeys Bridge- type Testkey Can5lever- type Testkey Wafer- Level Mechanical Proper5es Extrac5ng Algorithm Comparison with M- TEST (100) Single Crystal Silicon (110) Single Crystal Silicon Experiment Sample Prepara5on Pull- in Voltage Detec5ng Capacitance- Voltage Measurement The Pull- in Voltage Results of Bridge- type Testkey The Pre- deforma5on of Can5lever- type Testkey Extrac5ng Mechanical Proper5es of Structural Material Robustness Discussion Sensi5vity Analysis for Pull- in Voltage Measurement Dimension Effects of Testkeys Conclusions - 6-

27 Post-process Sample Prepara5on SEM of testkey structures pass3 pass 10 pass1 SiO M6 Via56 M5 Via45 M4 M3 Via34 Via3 Via1 M1 contact Poly M6 Via56 M5 Via45 M4 M3 Via34 Via3 Via1 M1 contact Poly Etching hole pass1 SiO Upper electrode M Ga p=1.93 Bottom electrode Poly M6 Via56 M5 Via45 M4 M3 Via34 Via3 Via1 M1 Poly contact pass pass3 pass 10 pass1 SiO Substrate TSMC 1P6M process pass3 pass 10 pass1 SiO M6 Via56 M5 Via45 M4 M3 Via34 Via3 Via1 M1 contact Poly M6 Via56 M5 Via45 M4 M3 Via34 Via3 Via1 M1 contact Poly pass1 85 min Silox Vapox III M Poly M6 Via56 M5 Via45 M4 M3 Via34 Via3 Via1 M1 Poly contact pass pass3 pass 10 pass1 SiO Substrate - 7-

28 Outline Introduc5on State of the Art Technology Electromechanical Behavior of the Testkeys Bridge- type Testkey Can5lever- type Testkey Wafer- Level Mechanical Proper5es Extrac5ng Algorithm Comparison with M- TEST (100) Single Crystal Silicon (110) Single Crystal Silicon Experiment Sample Prepara5on Pull- in Voltage Detec5ng Capacitance- Voltage Measurement The Pull- in Voltage Results of Bridge- type Testkey The Pre- deforma5on of Can5lever- type Testkey Extrac5ng Mechanical Proper5es of Structural Material Robustness Discussion Sensi5vity Analysis for Pull- in Voltage Measurement Dimension Effects of Testkeys Conclusions - 8-

29 Measurement condi5ons. Function Testing Signal Frequency Testing Signal Level Bias Voltage Range Bias Voltage Step Integration Time Pull- in Voltage Detec5ng Cp-D 1 MHz 0.05 V 0 40 V 0.05 V Med The input voltage signal in the capacitance- voltage measurement. Test signal voltage Schema5c of the experiment setup for pull- in voltage detec5on. Agilent 485A E4980 precision LCR meter C-V data PC L = 600 m L = 500 m Sample group Pull-in criterion L =400 m VDC+Vs DC-bias VDC Vs Testing sample Testing Sample 0 t - 9-

30 Pull- in Voltage Detec5ng Typical sensi5vi5es curves of the capacitances with respect to applied bias voltages of the test beam. Capacitance (ff) Pull-in occurs Voltage (V) The capacitance will raise up to tenfold even hundredfold value compared to the original capacitance when pull- in occurs

31 Length L (µm) The Pull- in Voltage Results of Bridge- type Parameters Vpull-in V PI( V) Average V PI-ave (V) Values Beam width b (µm) 5 Initial gap g (µm) 1.93 Beam thickness h (µm) 0.53 Beam length L (µm) Testkey Standard Deviation ΔV PI 0 1.7,1.3,1.3,1.47, ,11.71,11.76,1.7, ,11.41,11.46,11.51, ,10.46,10.71,10.91, ,10.06,10.16,10.6, , 9.11,9.5, 9.71, , 8.86,8.86,9.16, , 8.61, 8.86, 8.86, ,8.11, 8.31, 8.56, Vpull-in (voltage) Length (um)

32 The Pre- deforma5on of Can5lever- type Testkey () Cantilever-type Testkey White light interferometer Measure the pre-deformation at the free end (u max ) of cantileve beam σ = heu max 1 L 7.00E+00 Gradient stress (σ 1 ) Deformation (µm) 6.00E E E E+00.00E E+00 y = x x E E+00 Position (µm) - 3-

33 Ini5al Rota5on Effect 7.00E+00 Length (L), (µm) 70 Width (b), (µm) 5 Thickness (h), (µm) 0.53 Quadratic term X max, (µm) Pre-deformation (u max ), (µm) Deformation (µm) 6.00E E+00 4 y = 5 10 x x E E+00.00E E E E+00 Position (µm) y y y ' 4 = 5 10 x ' y = 5 10 ' 4 ' x x umax = ymax = 5 10 (79.91) = u max θ 0 x θ 0 u max x - 33-

34 The Pre- deforma5on of Can5lever- type Width b (µm) Testkey Location At Maximum Length Quadratic Shape Function Free End Deflection L (µm) Term x max (µm) y max (µm) 70 y=0.0004x x y=0.0004x y=0.0005x x y=0.0005x y=0.0005x x y=0.0005x y=0.0006x x y=0.0006x y=0.0005x x y=0.0005x

35 Extracting Mechanical Properties of Structural Material - TSMC 0.18um M L (μm) E (GPa) Length (μm) Length (μm) σ0 (MPa) - 35-

36 Extracting Mechanical Properties of Structural Material - TSMC 0.18um M (1)Bridge-type testkey Measure V in1, V in of two fixed-fixed beam structures with different length 1 1 β1 Vpull in 1 β Vpull in σ 0 α = E α Length difference (µm) Length (µm) The extracted values by this work ΔL L 1 L E (GPa) σ 0 (MPa) Average (X ave ) Standard Deviation (ΔX) ΔX/ X ave 10.1% 4.5% Young s modulus (E) Mean stress (σ 0 )

37 Extracting Mechanical Properties of Structural Material - TSMC 0.18um M () Cantilever-type Testkey Measure the pre-deformation at the free end (u max ) of cantileve beam σ = heu max 1 L Width b (µm) Length L (µm) Maximum Deflection y max (µm) Gradient Stress σ 1 (Mpa) Average (X ave ) 47.3 Standard Deviation (ΔX) 5.4 ΔX/ X ave 11.48% Gradient stress (σ 1 )

38 Brief Summary The values ΔX/ X ave of the Young s modulus, mean stress and gradient stress of the demonstrated material are within 11%, 5%, and 1% respec5vely. The measured pull- in voltage (V PI ) is with some devia5on (ΔV PI ) and ΔL affects the extracted results, robustness discussion including sensi5vity analysis for pull- in voltage measurement and dimension effects of testkey will be discussed later.

39 Outline Introduc5on State of the Art Technology Electromechanical Behavior of the Testkeys Bridge- type Testkey Can5lever- type Testkey Wafer- Level Mechanical Proper5es Extrac5ng Algorithm Comparison with M- TEST (100) Single Crystal Silicon (110) Single Crystal Silicon Experiment Sample Prepara5on Pull- in Voltage Detec5ng Capacitance- Voltage Measurement The Pull- in Voltage Results of Bridge- type Testkey The Pre- deforma5on of Can5lever- type Testkey Extrac5ng Mechanical Proper5es of Structural Material Dimension Effects of Testkeys Conclusions - 39-

40 Dimension Effects of Testkeys The extracted results for material made by mono- crystalline silicon ( L= 50 μm). (100) (110) L 1 L E (GPa) σ 0 (MPa) E ave (GPa) σ 0ave (MPa) E ave σ 0ave E ave / E ave σ 0ave /σ 0ave % 1.4% % 10.49% - 40-

41 Dimension Effects of Testkeys Testkeys : TSMC 0.18um M,(110)Si, (100)Si- L > 50μm E /E, σ 0 / σ 0 <15% Standard Deviation / Average (%) Bad Design Window E /E-TSMC 0.18um M E /E-(110) Si E /E-(100) Si σ0 /σ0-tsmc 0.18um M σ0 /σ0-(110) Si σ0 /σ0-(100) Si L (µm) - 41-

42 Conclusions This project presents the technologies for extrac5ng mechanical proper5es, such as Young s modulus, mean stress and gradient stress. Common Structural Material metal made by the TSMC 0.18 µm standard CMOS process The extracted values by this work E (GPa) σ 0 σ 1 (MPa) (MPa) 13.01± ± ±5.4 mono-crystalline silicon in (100) ± ±0.14 mono-crystalline silicon in (110) ± ±

43 Conclusions L dominates the convergence of E /E and σ 0 / σ 0, not the pull- in voltage of the testkey. Testkeys : TSMC 0.18um M,(110)Si, (100)Si- L > 50μm E /E, σ 0 / σ 0 <15% - 43-

44 No extra area Conclusions testkey Anchor: 80X80 Can5lever beam PAD: 50X50 dicing path with width=80um This method is expected to be applicable to the wafer- level tes5ng to examine the mechanical proper5es of individual thin- film layers in standard CMOS process since the test and pick- up signals are both non- destruc5ve

45 Thanks for your attention

46 Presenter biography Day: 015/09/09 Time: 10:15am- 10:50am Title of Presenta5on: COMS- MEMS testkey for residual stress extrac5ng at wafer- level Presenter name: Wan- Chun Chuang Organiza5on: Na5onal Sun Yat- sen University Research Interests: CMOS- MEMS device, flexible device, Mul5- physics analysis