= n. Psin. Qualitative Explanation of image degradation by lens + 2. parallel optical beam. θ spatial frequency 1/P. grating with.
|
|
- Evelyn Simmons
- 5 years ago
- Views:
Transcription
1 Qualitative Explanation of image degradation by lens Mask + 2 lens wafer plane +1 φ 0 parallel optical beam -2-1 grating with θ spatial frequency 1/P Psin φ = n λ n = 0, ± 1, ± 2,... L S P l m P=2L sin φ < NA of lens Sheats and Smith 15
2 Bragg Condition P Incident ray with wave fronts L S Quartz P=L+S P sin n = nλ ϕ nλ φ n Transmitted ray Chrome Wavefronts Ray of Light Diffracted ray #3 The Bragg condition sets the diffraction angles 16
3 Pupil Wave Traffic: Partial Coherence #4 Lens is a low pass filter of mask diffraction at Bragg angles Sinθ Y NA Shifted by sinφ = λ/p Lens Pupil Sinθ MAX = NA Cone of Incident Light Some misses pupil Diffracted Orders from a mask with period P Sinθ X +2 Potential for entering the pupil 17
4 Electric Field: Sinusoids Binary Mask with period P and opening space s P When filtered to three waves (0, +1, and -1) E( x) = E + 2E1 s [ ( s )] 0 A sin nπ E P n = 2 [ ( s )] nπ 2πx cos P k x1 = 2π/P P When s = P/2 E( x) = cos π 2πx P Sheats and Smith 18
5 Intensity as Square of Electric Field The energy carried by a wave and the work done on a material are proportional to the time average of the square of the electric field. Thus the intensity is proportional to E 2 when the field is real and EE* when phasors are used and E is complex. Intensity = EE* gives I * ( x) = EE = E + 2E E cos( ) + 4E cos πx 2πx Since the Fourier transform converges to the average at a discontinuity, the electric field at the mask edge will be about 0.5, and the intensity at a mask edge will be about #5 The intensity at a mask edge is only 30% of the clear field intensity regardless of feature type and size. P 1 P 19
6 Intensity at the mask edge is about 0.30 for all feature types Mask Edge Space Dense L = S Sigma 0.5 Dense Line C DENSE = ( ) ( ) = 0.98 Convention: Line is a line in positive resist. Image Contrast C = (I max I min )/(I max + I min ) 20
7 #6 Superposition Fails for Images! (but superposition holds for Electric-Fields instead) 0.3λ/NA 0.5λ/NA 0.8λ/NA Much taller and wider. Peak intensity initially increases as the square of linewidth. Consequence of I = EE* This messes up fast OPC based on linear transforms!! 21
8 Mask Error Factor (MEF) Linewidth on Wafer Another Consequence of I = EE* (Linewidth on Mask)/M Expected Lines (2x slope) Contacts (4x slope) Effect is larger at k 1 < 0.6 CD PRINTED = MEF CD M MASK MEF = MEEF = Mask Error Enhancement Factor 22
9 Focus Behavior: Bossong Plot (SMILE) Dense Line = Space = 180 nm Line = 300 nm Exposure Exposure JSR M91Y resist, 248nm, NA = 0.63, 0.8/0.4 annular illumination C. Mack
10 Process Window: Exposure/Focus Percent Exposure Variation 60.0 Percent Exposure Latitude Line Focal Position (microns) Space Contour Map for 10% linewidth change Depth of Focus (microns) C. Mack
11 Standing Waves hv Incident Aerial Image Positive Photoresist substrate After development Positive Photoresist. substrate 25
12 Electric Field within Resist Air Resist n 1 n 2 Substrate n 3 5 waves match boundary conditions (or use signal flow analysis) use definition of τ D Downward wave Round trip propagation Upward wave E RESIST ( x, y, z) = E AIR _ INC τ ( x, y) 12 Transmission in Reflection at substrate ( jk ) 2z 2 + jk2z e + ρ τ e 1+ ρ 12 ρ τ D 2 D Round trip loop gain (loss) 26
13 Measured Dissolution vs. Dose i-line (Positive) DUV (Negative) DUV (Positive) S-shaped Corner-shaped Corner-shaped γ > 5 γ > 8 γ > 15 27
14 Dissolution Rate Models R(E) R R DILL ( M ) = e 2 ( E + E M + E M ) 1 ( M, z) f ( M, z) R ( M KIM = 2 3 BULK z f ( M, z) = 1 R MACK ( 1 ( R5 ( R5 R6 ) M )) 4 e R Dissolution rate R in µm/s as a function of energy E or photoactive generator M. ) 2 BULK ( a + 1)(1 M ) + ( 1 M ) n ( M ) RMAX R ( M ) = + R Ferguson ( ) MIN a ( M ) = R0 (1 CE / C0 n α ) ( ) M It = R = e 1 Me R ICt R 1 = e 1 M ) E Ct 1 + Me R 3 ( 3 R (1 M ) 2 28
15 Hands On Exploration 29
16 Basic Projection Printing Applet Sigma_in Dense Defocus 30
17 Annular Illumination: k 1 =0.4 Large DOF L = S = 0.4 σ IN = 0.5 σ OUT = 0.8 DOF = 2.0 Contrast =
18 LAVA Applet: Pattern and Aberration This applet is one of mask type choices in the interaction of defects with features applet. 32
19 Image Quality: Across Line k 1 = 0.6 Feature Slope: 2.5/(λ/NA) This 1D image slope is nearly doubled by I =EE*. Mask Opening This 1D image slope is nearly independent of feature size. Another Consequence of I = EE* 33
20 Image Quality: Line End k 1 = 0.6 Feature Slope: 1.8/(λ/NA) Mask Opening #7 The slope of the 2D image at the end of the line is only 72% as large. 34
21 Basic Aberrations in Projection Printing These are simple aberrations that are not always orthogonal to each other (e.g. coma contains tilt.) 35
22 Simple Coma 0.10 Waves 3 space pattern Coma Unaberrated This bump suggests ways to monitor coma. 36
23 SAMPLE2D Resist Line Edge Profile 75s 15s 30s 45s 60s Mack Model 120 mj/cm 2 #8A Interference in the resist produces standingwaves with a period = λ/2n RESIST 37
24 Simpl_display PC Layout Viewer for GDSII Frank Gennari 2004 SRC Right mouse click and drag to enlarge Then f key to return to fit to window Abacus Chip Example Download this code from the LAVA website 38
25 Simpl_display PC Layout View Manipulation Numbers on keyboard toggle mask levels: 1= poly, 2=con, 3=met Left poly con 3 => Right poly Con met Lower case s saves current view as jpg in an image file Stipple patterns are possible with 8 x8 fill pattern: NAME POLY RGB FILL
Purpose: Explain the top 10 phenomena and concepts key to
Basic rojection rinting (B) Modules urpose: Explain the top 10 phenomena and concepts key to understanding optical projection printing B-1: Resolution and Depth of Focus (1.5X) B-2: Bragg condition and
More information* AIT-4: Aberrations. Copyright 2006, Regents of University of California
Advanced Issues and Technology (AIT) Modules Purpose: Explain the top advanced issues and concepts in optical projection printing and electron-beam lithography. AIT-: LER and Chemically Amplified Resists
More informationChromeless Phase Lithography (CPL)
Chromeless Phase Lithography (CPL) Chromeless Phase Lithography or CPL is a recent development in the area of phase shifting technology that is extending the perceived k 1 limits and has the potential
More informationAIT-1: LER and Chemically Amplified Resists. AIT-4: Aberrations AIT-5: Maskless, High-NA, Immersion, EUV, Imprint
Advanced Issues and Technology (AIT) Modules Purpose: xplain the top advanced issues and concepts in optical projection printing and electron-beam lithography. h AIT-1: R and Chemically Amplified Resists
More informationPhotomasks. Photolithography Evolution 9/11/2004 ECE580- MPE/MASKS/PHOTOMASKS.PPT
Photolithography Evolution 1 : Evolution 2 Photomasks Substrates: Type : thermal expansion Chrome Pellicles Mask: OPC and PSM Fabrication: E-Beam or Laser 3 Photomask Information Websites: http://www.photronics.com/internet/corpcomm/publications/basics101/basics.
More informationSwing Curves. T h e L i t h o g r a p h y T u t o r (Summer 1994) Chris A. Mack, FINLE Technologies, Austin, Texas
T h e L i t h o g r a p h y T u t o r (Summer 1994) Swing Curves Chris A. Mack, FINLE Technologies, Austin, Texas In the last edition of this column, we saw that exposing a photoresist involves the propagation
More informationCopyright 2004 by the Society of Photo-Optical Instrumentation Engineers.
Copyright 2 by the Society of Photo-Optical Instrumentation Engineers. This paper was published in the proceedings of the 2th Annual BACUS Symposium on Photomask Technology, SPIE Vol. 67- and is made available
More informationCopyright 2000 by the Society of Photo-Optical Instrumentation Engineers.
Copyright 2 by the Society of Photo-Optical Instrumentation Engineers. This paper was published in the proceedings of Photomask and X-Ray Mask Technology VII SPIE Vol. 466, pp. 172-179. It is made available
More informationCopyright 2003 by the Society of Photo-Optical Instrumentation Engineers.
Copyright 2003 by the Society of Photo-Optical Instrumentation Engineers. This paper was published in the proceedings of Optical Microlithography XVI, SPIE Vol. 5040, pp. 151-161. It is made available
More informationPhotolithography II ( Part 1 )
1 Photolithography II ( Part 1 ) Chapter 14 : Semiconductor Manufacturing Technology by M. Quirk & J. Serda Bjørn-Ove Fimland, Department of Electronics and Telecommunication, Norwegian University of Science
More informationBossung Curves; an old technique with a new twist for sub-90 nm nodes Terrence E. Zavecz TEA Systems
Phone: (+01) 610 682 4146 Email: Info@TEAsystems.com http://www.teasystems.com TEA Systems Corporation 65 Schlossburg St. Alburtis, PA 18011 USA Bossung Curves; an old technique with a new twist for sub-90
More informationHigh Optical Density Photomasks For Large Exposure Applications
High Optical Density Photomasks For Large Exposure Applications Dan Schurz, Warren W. Flack, Makoto Nakamura Ultratech Stepper, Inc. San Jose, CA 95134 Microlithography applications such as advanced packaging,
More informationLawrence Berkeley National Laboratory Lawrence Berkeley National Laboratory
Lawrence Berkeley National Laboratory Lawrence Berkeley National Laboratory Title Spatial scaling metrics of mask-induced induced line-edge roughness Permalink https://escholarship.org/uc/item/5rc666c3
More informationCharacterization of Optical Proximity Correction Features
Characterization of Optical Proximity Correction Features John Allgair, Michelle Ivy, Kevin Lucas, John Sturtevant Motorola APRDL, Austin, TX 7871 Richard Elliott, Chris A. Mack, Craig MacNaughton, John
More informationMethodology of modeling and simulating line-end shortening effects in deep-uv resist
Methodology of modeling and simulating line-end shortening effects in deep-uv resist Mosong Cheng*, Ebo Croffie, Andrew Neureuther Electronics Research Laboratory Department of Electrical Engineering and
More informationPart 1 - Basic Interferometers for Optical Testing
Part 1 - Basic Interferometers for Optical Testing Two Beam Interference Fizeau and Twyman-Green interferometers Basic techniques for testing flat and spherical surfaces Mach-Zehnder Zehnder,, Scatterplate
More informationHorizontal-Vertical (H-V) Bias, part 2
Tutor52.doc: Version 11/4/05 T h e L i t h o g r a p h y E x p e r t (February 2006) Horizontal-Vertical (H-V) Bias, part 2 Chris A. Mack, Austin, Texas In the last edition of this column we looked at
More information193 nm STEP AND SCAN LITHOGRAPHY
193 nm STEP AND SCAN LITHOGRAPHY Guy Davies, Judon Stoeldraijer, Barbra Heskamp, Jan Mulkens, Joost Sytsma, Hans Bakker ASML BV, De Run 111, 553 LA Veldhoven, The Netherlands Holger Glatzel, Christian
More informationCopyright 2001 by the Society of Photo-Optical Instrumentation Engineers.
Copyright 2001 by the Society of Photo-Optical Instrumentation Engineers. This paper was published in the proceedings of Advances in Resist Technology and Processing XVIII, SPIE Vol. 4345, pp. 1013-1021.
More informationHigh NA the Extension Path of EUV Lithography. Dr. Tilmann Heil, Carl Zeiss SMT GmbH
High NA the Extension Path of EUV Lithography Dr. Tilmann Heil, Carl Zeiss SMT GmbH Introduction This talk is about resolution. Resolution λ = k 1 NA High-NA NA 0.33 0.4 0.5 0.6 Resolution @ k1=0.3 single
More informationAOL Spring Wavefront Sensing. Figure 1: Principle of operation of the Shack-Hartmann wavefront sensor
AOL Spring Wavefront Sensing The Shack Hartmann Wavefront Sensor system provides accurate, high-speed measurements of the wavefront shape and intensity distribution of beams by analyzing the location and
More informationOptics Optical Testing and Testing Instrumentation Lab
Optics 513 - Optical Testing and Testing Instrumentation Lab Lab #6 - Interference Microscopes The purpose of this lab is to observe the samples provided using two different interference microscopes --
More informationComparison of Techniques to Measure the Point Spread Function due to Scatter and Flare in EUV Lithography Systems
Metrology, 61 Comparison of Techniques to Measure the Point Spread Function due to Scatter and Flare in EUV Lithography Systems Manish Chandhok,, Sang H. Lee, Christof Krautschik, Guojing Zhang, Bryan
More informationOptics.
Optics www.optics.rochester.edu/classes/opt100/opt100page.html Course outline Light is a Ray (Geometrical Optics) 1. Nature of light 2. Production and measurement of light 3. Geometrical optics 4. Matrix
More informationOptics for Engineers Chapter 11
Optics for Engineers Chapter 11 Charles A. DiMarzio Northeastern University Nov. 212 Fourier Optics Terminology Field Plane Fourier Plane C Field Amplitude, E(x, y) Ẽ(f x, f y ) Amplitude Point Spread
More informationLecture 19 Optical MEMS (1)
EEL6935 Advanced MEMS (Spring 5) Instructor: Dr. Huikai Xie Lecture 19 Optical MEMS (1) Agenda: Optics Review EEL6935 Advanced MEMS 5 H. Xie 3/8/5 1 Optics Review Nature of Light Reflection and Refraction
More informationOptics for Engineers Chapter 11
Optics for Engineers Chapter 11 Charles A. DiMarzio Northeastern University Apr. 214 Fourier Optics Terminology Apr. 214 c C. DiMarzio (Based on Optics for Engineers, CRC Press) slides11r1 1 Fourier Optics
More informationCopyright 1999 by the Society of Photo-Optical Instrumentation Engineers.
Copyright 1999 by the Society of Photo-Optical Instrumentation Engineers. This paper was published in the proceedings of Advances in Resist Technology and Processing XVI, SPIE Vol. 3678, pp. 1-1011. It
More informationRapid and precise monitor of reticle haze
Rapid and precise monitor of reticle haze Terrence Zavecz a, Bryan Kasprowicz b a TEA Systems Corp., 65 Schlossburg St. Alburtis, PA 18011 USA: Email: tzavecz@teasystems.com b Photronics Inc., 601 millennium
More informationThe MEEF Shall Inherit the Earth
The MEEF Shall Inherit the Earth. 1 1 2 2.3 4 Will Conley, Cesar Garza, Mircea Dusa, Robert Socha, Joseph Bendik, Chris Mack 1Motorola Austin, TX 2ASML Mask Tools San Jose, CA 3Dynamic Intelligence Inc.
More informationDesigning a Computer Generated Hologram for Testing an Aspheric Surface
Nasrin Ghanbari OPTI 521 Graduate Report 2 Designing a Computer Generated Hologram for Testing an Aspheric Surface 1. Introduction Aspheric surfaces offer numerous advantages in designing optical systems.
More informationEffects of Chrome Pattern Characteristics on Image Placement due to the Thermomechanical Distortion of Optical Reticles During Exposure
Effects of Chrome Pattern Characteristics on Image Placement due to the Thermomechanical Distortion of Optical Reticles During Exposure A. Abdo, ab L. Capodieci, a I. Lalovic, a and R. Engelstad b a Advanced
More informationElectric field enhancement in metallic and multilayer dielectric gratings
Electric field enhancement in metallic and multilayer dielectric gratings B. W. Shore, M. D. Feit, M. D. Perry, R. D. Boyd, J. A. Britten, R. Chow, G. E. Loomis Lawrence Livermore National Laboratory,
More informationADVANCED IMAGING AND OVERLAY PERFORMANCE OF A DUV STEP & SCAN SYSTEM
ADVANCED IMAGING AND OVERLAY PERFORMANCE OF A DUV STEP & SCAN SYSTEM Jan van Schoot, Bert Koek, Chris de Mol, Peter van Oorschot. ASML Veldhoven, The Netherlands This paper was first presented at the Semicon/
More informationn The visual examination of the image of a point source is one of the most basic and important tests that can be performed.
8.2.11 Star Test n The visual examination of the image of a point source is one of the most basic and important tests that can be performed. Interpretation of the image is to a large degree a matter of
More information2.71. Final examination. 3 hours (9am 12 noon) Total pages: 7 (seven) PLEASE DO NOT TURN OVER UNTIL EXAM STARTS PLEASE RETURN THIS BOOKLET
2.71 Final examination 3 hours (9am 12 noon) Total pages: 7 (seven) PLEASE DO NOT TURN OVER UNTIL EXAM STARTS Name: PLEASE RETURN THIS BOOKLET WITH YOUR SOLUTION SHEET(S) MASSACHUSETTS INSTITUTE OF TECHNOLOGY
More informationPerformance Enhancement of 157 nm Newtonian Catadioptric Objectives
Performance Enhancement of 157 nm Newtonian Catadioptric Objectives James Webb, Timothy Rich, Anthony Phillips and Jim Cornell Corning Tropel Corporation, 60 O Connor Rd, Fairport, NY 14450, 585-377-3200
More informationSilicon VLSI Technology. Fundamentals, Practice and Modeling
Text Book: Silicon VLSI Technology Fundamentals, Practice and Modeling Authors: J. D. Plummer, M. D. Deal, and P. B. Griffin Photolithography (Chap. 1) Basic lithography process Apply photoresist Patterned
More informationTitle: ASML PAS 5500 Job Creation Semiconductor & Microsystems Fabrication Laboratory Revision: D Rev Date: 09/20/2012
Approved by: Process Engineer / / / / Equipment Engineer 1 SCOPE The purpose of this document is to detail the creation of stepper jobs for the ASML PAS 5500. All users are expected to have read and understood
More informationCopyright 1999 by the Society of Photo-Optical Instrumentation Engineers.
Copyright 1999 by the Society of Photo-Optical Instrumentation Engineers. This paper was published in the proceedings of Lithography for Semiconductor Manufacturing SPIE Vol. 3741, pp. 148-160. It is made
More informationChapter 6 SCALAR DIFFRACTION THEORY
Chapter 6 SCALAR DIFFRACTION THEORY [Reading assignment: Hect 0..4-0..6,0..8,.3.3] Scalar Electromagnetic theory: monochromatic wave P : position t : time : optical frequency u(p, t) represents the E or
More informationChapter 2 Process Variability. Overview. 2.1 Sources and Types of Variations
Chapter 2 Process Variability Overview Parameter variability has always been an issue in integrated circuits. However, comparing with the size of devices, it is relatively increasing with technology evolution,
More informationTopic 4: Waves 4.3 Wave characteristics
Guidance: Students will be expected to calculate the resultant of two waves or pulses both graphically and algebraically Methods of polarization will be restricted to the use of polarizing filters and
More informationAdaptive Optics Lectures
Adaptive Optics Lectures 1. Atmospheric turbulence Andrei Tokovinin 1 Resources CTIO: www.ctio.noao.edu/~atokovin/tutorial/index.html CFHT AO tutorial: http://www.cfht.hawaii.edu/instruments/imaging/aob/other-aosystems.html
More informationNature of Light Part 2
Nature of Light Part 2 Fresnel Coefficients From Helmholts equation see imaging conditions for Single lens 4F system Diffraction ranges Rayleigh Range Diffraction limited resolution Interference Newton
More informationResist material for negative tone development process
Resist material for negative tone development process FUJIFILM Corporation Electronic Materials Research Laboratories P-1 Outline 1. Advantages of negative tone imaging for DP 2. Process maturity of negative
More informationImaging Metrics. Frequency response Coherent systems Incoherent systems MTF OTF Strehl ratio Other Zemax Metrics. ECE 5616 Curtis
Imaging Metrics Frequenc response Coherent sstems Incoherent sstems MTF OTF Strehl ratio Other Zema Metrics Where we are going with this Use linear sstems concept of transfer function to characterize sstem
More informationWavefront Sensing using Polarization Shearing Interferometer. A report on the work done for my Ph.D. J.P.Lancelot
Wavefront Sensing using Polarization Shearing Interferometer A report on the work done for my Ph.D J.P.Lancelot CONTENTS 1. Introduction 2. Imaging Through Atmospheric turbulence 2.1 The statistics of
More information1. Waves and Particles 2. Interference of Waves 3. Wave Nature of Light
1. Waves and Particles 2. Interference of Waves 3. Wave Nature of Light 1. Double-Slit Eperiment reading: Chapter 22 2. Single-Slit Diffraction reading: Chapter 22 3. Diffraction Grating reading: Chapter
More informationMask induced polarization effects at high NA
Mask induced polarization effects at high NA Andrew Estroff, Yongfa Fan, Anatoly Bourov, Bruce Smith Rochester Institute of Technology, Microelectronic Engineering, Rochester, NY 14623 Philippe Foubert,
More informationiprom Optical Interferometry Prof. Dr. -Ing. Rainer Tutsch Institut für Produktionsmesstechnik IPROM Technische Universität Braunschweig
Optical Interferometry Prof. Dr. -Ing. Rainer Tutsch Institut für Produktionsmesstechnik IPROM Technische Universität Braunschweig Frontiers of Metrology April 1, 01 I P NSTITUT FÜR RODUKTIONSMESSTECHNIK
More informationTechniques for directly measuring the absorbance of photoresists at EUV wavelengths
Techniques for directly measuring the absorbance of photoresists at EUV wavelengths Manish Chandhok, a Heidi Cao, a Wang Yueh, a Eric Gullikson, b Robert Brainard, c Stewart Robertson c a Intel Corporation,
More informationLaser Speckle and Applications in Optics
Laser Speckle and Applications in Optics M. FRANCON Optics Laboratory Faculty of Sciences University of Paris Paris, France Translated by HENRI H. ARSENAULT Department of Physics Laval University Quebec,
More informationPhotolithography Overview 9/29/03 Brainerd/photoclass/ECE580/Overvie w/overview
http://www.intel.com/research/silicon/mooreslaw.htm 1 Moore s law only holds due to photolithography advancements in reducing linewidths 2 All processing to create electric components and circuits rely
More informationPhys 531 Lecture 27 6 December 2005
Phys 531 Lecture 27 6 December 2005 Final Review Last time: introduction to quantum field theory Like QM, but field is quantum variable rather than x, p for particle Understand photons, noise, weird quantum
More informationPart 3 - Image Formation
Part 3 - Image Formation Three classes of scattering outcomes Types of electron microscopes Example SEM image: fly nose Example TEM image: muscle Skeletal muscle. Cell and Tissue Ultrastructure Mercer
More informationIntroduction. Photoresist : Type: Structure:
Photoresist SEM images of the morphologies of meso structures and nanopatterns on (a) a positively nanopatterned silicon mold, and (b) a negatively nanopatterned silicon mold. Introduction Photoresist
More information2.710 Optics Spring 09 Problem Set #6 Posted Monday, Apr. 6, 2009 Due Wednesday, Apr. 15, 2009
MASSACHUSETTS INSTITUTE OF TECHNOLOGY 2.710 Optics Spring 09 Problem Set #6 Posted Monday, Apr. 6, 2009 Due Wednesday, Apr. 15, 2009 1. Grating with tilted plane wave illumination Consider a sinusoidal
More informationDesign and Correction of optical Systems
Design and Correction of optical Systems Part 10: Performance criteria 1 Summer term 01 Herbert Gross Overview 1. Basics 01-04-18. Materials 01-04-5 3. Components 01-05-0 4. Paraxial optics 01-05-09 5.
More informationTitle: ASML Stepper Semiconductor & Microsystems Fabrication Laboratory Revision: B Rev Date: 12/21/2010
Approved by: Process Engineer / / / / Equipment Engineer 1 SCOPE The purpose of this document is to detail the use of the ASML PAS 5500 Stepper. All users are expected to have read and understood this
More information3.1 The Plane Mirror Resonator 3.2 The Spherical Mirror Resonator 3.3 Gaussian modes and resonance frequencies 3.4 The Unstable Resonator
Quantum Electronics Laser Physics Chapter 3 The Optical Resonator 3.1 The Plane Mirror Resonator 3. The Spherical Mirror Resonator 3.3 Gaussian modes and resonance frequencies 3.4 The Unstable Resonator
More informationChapter 35. Interference
Chapter 35 Interference The concept of optical interference is critical to understanding many natural phenomena, ranging from color shifting in butterfly wings to intensity patterns formed by small apertures.
More informationAerial image based lens metrology for wafer steppers
Aerial image based lens metrology for wafer steppers P. Dirksen*, J.J.M. Braat**, A.J.E.M. Janssen*, T. Matsuyama***, T. Noda*** *Philips Research Europe, Belgium **Delft University of Technology, The
More informationFabrication of micro-optical components in polymer using proton beam micro-machining and modification
Nuclear Instruments and Methods in Physics Research B 210 (2003) 250 255 www.elsevier.com/locate/nimb Fabrication of micro-optical components in polymer using proton beam micro-machining and modification
More informationHyper-NA imaging of 45nm node random CH layouts using inverse lithography
Hyper-NA imaging of 45nm node random CH layouts using inverse lithography E. Hendrickx* a, A. Tritchkov b, K. Sakajiri b, Y. Granik b, M. Kempsell c, G. Vandenberghe a a IMEC, Kapeldreef 75, B-3001, Leuven,
More informationDesign and Correction of Optical Systems
Design and Correction of Optical Systems Lecture 7: PSF and Optical transfer function 017-05-0 Herbert Gross Summer term 017 www.iap.uni-jena.de Preliminary Schedule - DCS 017 1 07.04. Basics 1.04. Materials
More informationToday. MIT 2.71/2.710 Optics 11/10/04 wk10-b-1
Today Review of spatial filtering with coherent illumination Derivation of the lens law using wave optics Point-spread function of a system with incoherent illumination The Modulation Transfer Function
More informationExam 3 Solutions. Answer: 1830 Solution: Because of equal and opposite electrical forces, we have conservation of momentum, m e
Exam 3 Solutions Prof. Paul Avery Prof. Zongan iu Apr. 27, 2013 1. An electron and a proton, located far apart and initially at rest, accelerate toward each other in a location undisturbed by any other
More informationMeasuring aberrations in lithographic projection systems with phase wheel targets
Rochester Institute of Technology RIT Scholar Works Theses Thesis/Dissertation Collections 12-1-2010 Measuring aberrations in lithographic projection systems with phase wheel targets Lena Zavyalova Follow
More informationDouble Slit is VERY IMPORTANT because it is evidence of waves. Only waves interfere like this.
Double Slit is VERY IMPORTANT because it is evidence of waves. Only waves interfere like this. Superposition of Sinusoidal Waves Assume two waves are traveling in the same direction, with the same frequency,
More informationChapter 3 : ULSI Manufacturing Technology - (c) Photolithography
Chapter 3 : ULSI Manufacturing Technology - (c) Photolithography 1 Reference 1. Semiconductor Manufacturing Technology : Michael Quirk and Julian Serda (2001) 2. - (2004) 3. Semiconductor Physics and Devices-
More informationSimulation Based Formulation of a Non-Chemically Amplified Resist for 257 nm Laser Mask Fabrication
Simulation Based Formulation of a Non-Chemically Amplified Resist for 257 nm Laser Mask Fabrication Benjamen M. Rathsack, Cyrus E. Tabery, Timothy B. Stachowiak, Jeff Albelo 2 and C. Grant Willson Department
More informationLC circuit: Energy stored. This lecture reviews some but not all of the material that will be on the final exam that covers in Chapters
Disclaimer: Chapter 29 Alternating-Current Circuits (1) This lecture reviews some but not all of the material that will be on the final exam that covers in Chapters 29-33. LC circuit: Energy stored LC
More information5. LIGHT MICROSCOPY Abbe s theory of imaging
5. LIGHT MICROSCOPY. We use Fourier optics to describe coherent image formation, imaging obtained by illuminating the specimen with spatially coherent light. We define resolution, contrast, and phase-sensitive
More informationAutomatic Classification and Defect Verification Based on Inspection Technology with Lithography Simulation
Automatic Classification and Defect Verification Based on Inspection Technology with Lithography Simulation Masaya Kato a, Hideki Inuzuka a, Takeshi Kosuge a, Shingo Yoshikawa a, Koichi Kanno a, Hidemichi
More informationOptics. n n. sin c. sin
Optics Geometrical optics (model) Light-ray: extremely thin parallel light beam Using this model, the explanation of several optical phenomena can be given as the solution of simple geometric problems.
More informationGratings in Electrooptic Polymer Devices
Gratings in Electrooptic Polymer Devices Venkata N.P.Sivashankar 1, Edward M. McKenna 2 and Alan R.Mickelson 3 Department of Electrical and Computer Engineering, University of Colorado at Boulder, Boulder,
More informationPHYSICAL OPTICS. Ans: 1 Sol: The condition to form bright band at a point is to have a path difference of x = nλ From the given problem
PHYSCAL OPTCS PREVOUS EAMCET BTS (ENGNEERNG PAPER). n the Young s doule slit experiment the intensities at two points P and P on the screen are respectively and. f P is located at the centre of right fringe
More informationGood Diffraction Practice Webinar Series
Good Diffraction Practice Webinar Series High Resolution X-ray Diffractometry (1) Mar 24, 2011 www.bruker-webinars.com Welcome Heiko Ress Global Marketing Manager Bruker AXS Inc. Madison, Wisconsin, USA
More informationSpatial Frequency and Transfer Function. columns of atoms, where the electrostatic potential is higher than in vacuum
Image Formation Spatial Frequency and Transfer Function consider thin TEM specimen columns of atoms, where the electrostatic potential is higher than in vacuum electrons accelerate when entering the specimen
More informationPHY410 Optics Exam #3
PHY410 Optics Exam #3 NAME: 1 2 Multiple Choice Section - 5 pts each 1. A continuous He-Ne laser beam (632.8 nm) is chopped, using a spinning aperture, into 500 nanosecond pulses. Compute the resultant
More informationActinic review of EUV masks: First results from the AIMS EUV system integration
Invited Paper Actinic review of EUV masks: First results from the AIMS EUV system integration Markus R. Weiss* a, Dirk Hellweg a, Jan Hendrik Peters b, Sascha Perlitz b, Anthony Garetto b, Michael Goldstein
More informationThe EYE. Physics 1502: Lecture 32 Today s Agenda. Lecture 4. Announcements: Optics. Midterm 2: graded after Thanks Giving
Physics 1502: Lecture 32 Today s Agenda Announcements: Midterm 2: graded after Thanks Giving Homework 09: Friday December 4 Optics Eye interference The EYE ~f o objective I 2 L I 1 ~f e eyepiece 1 2 Compound
More informationAnalysis of second-harmonic generation microscopy under refractive index mismatch
Vol 16 No 11, November 27 c 27 Chin. Phys. Soc. 19-1963/27/16(11/3285-5 Chinese Physics and IOP Publishing Ltd Analysis of second-harmonic generation microscopy under refractive index mismatch Wang Xiang-Hui(
More informationPS210 - Optical Techniques. Section VI
PS210 - Optical Techniques Section VI Section I Light as Waves, Rays and Photons Section II Geometrical Optics & Optical Instrumentation Section III Periodic and Non-Periodic (Aperiodic) Waves Section
More informationTutorial 7: Solutions
Tutorial 7: Solutions 1. (a) A point source S is a perpendicular distance R away from the centre of a circular hole of radius a in an opaque screen. f the distance to the periphery is (R + l), show that
More informationAerial image based lens metrology for wafer steppers
Aerial image based lens metrology for wafer steppers Peter Dirksen a, Joseph J.M. Braat b, Augustus J.E.M. Janssen c, Ad Leeuwestein c,tomoyuki Matsuyama d,tomoyanoda d a Philips Research Europe, Belgium
More informationHigh-Resolution. Transmission. Electron Microscopy
Part 4 High-Resolution Transmission Electron Microscopy 186 Significance high-resolution transmission electron microscopy (HRTEM): resolve object details smaller than 1nm (10 9 m) image the interior of
More informationPHY2049 Fall11. Final Exam Solutions (1) 700 N (2) 350 N (3) 810 N (4) 405 N (5) 0 N
Exam Solutions 1. Three charges form an equilateral triangle of side length d = 2 cm. The top charge is q3 = 3 μc, while the bottom two are q1 = q2 = - 6 μc. What is the magnitude of the net force acting
More informationWaves Part III Electromagnetic waves
Waves Part III Electromagnetic waves Electromagnetic (light) waves Transverse waves Transport energy (and momentum) Can travel through vacuum (!) and certain solids, liquids and gases Do not transport
More informationLithography Issues in Nano Chip Design and Manufacture
Lithography Issues in Nano Chip Design and Manufacture Xuan Zeng, Jintao Xue and Wei Cai ASIC & System State Key Lab., Microelectronics Dept., Fudan Univerisity Jan. 7, 2007 Jan. 7, 2007 Challenges and
More informationThe Electromagnetic Properties of Materials
The Electromagnetic Properties of Materials Electrical conduction Metals Semiconductors Insulators (dielectrics) Superconductors Magnetic materials Ferromagnetic materials Others Photonic Materials (optical)
More informationLab Manual: Determination of Planck s constant with x-rays
Lab Manual: Determination of Planck s constant with x-rays 1. Purpose: To obtain a better understanding on the production of X-rays, the bremsstrahlung radiation and the characteristic radiation of a Molybdenum
More informationNSR-2205i14E (6" Reticle Type)
Step-and-Repeat System NSR-2205i14E (6" Reticle Type) ACCEPTANCE TEST Nikon Precision Inc. January 9, 1998 JCW 1/98 22i14EAT01 1 NSR-2205i14E ACCEPTANCE TEST ITEMS (6" Reticle Type) No. Item Specification
More informationChapter 16 Holography
Chapter 16 Holography Virtually all recording devices for light respond to light intensity. Problem: How to record, and then later reconstruct both the amplitude and phase of an optical wave. [This question
More informationCopyright 2001 by the Society of Photo-Optical Instrumentation Engineers.
Copyright 2001 by the Society of Photo-Optical Instrumentation Engineers. This paper was published in the proceedings of the 21 st Annual BACUS Symposium on Photomask Technology SPIE Vol. 4562, pp. 486-495.
More informationLecture 4: Diffraction & Spectroscopy
Lecture 4: Diffraction & Spectroscopy d θ y L Spectra of atoms reveal the quantum nature of matter Take a plastic grating from the bin as you enter class. Lecture 4, p 1 Today s Topics Single-Slit Diffraction*
More informationAndy Buffler Department of Physics University of Cape Town
University of Cape Town Department of Physics PHY014F Vibrations and Waves Part 3 Travelling waves Boundary conditions Sound Interference and diffraction covering (more or less) French Chapters 7 & 8 Andy
More informationThe Diffraction Grating
The Diffraction Grating If one extends the double slit to large number of slits very closely spaced, one gets what is called a diffraction grating. d sin θ. Maxima are still at d sin θ m = mλ, m = 0, 1,
More informationsin" =1.22 # D "l =1.22 f# D I: In introduction to molecular electron microscopy - Imaging macromolecular assemblies
I: In introduction to molecular electron microscopy - Imaging macromolecular assemblies Yifan Cheng Department of Biochemistry & Biophysics office: GH-S472D; email: ycheng@ucsf.edu 2/20/2015 - Introduction
More information