CAS120M12BM2 1.2kV, 13 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec Diode
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1 Datasheet: CAS12M12BM2,Rev. - CAS12M12BM2 1.2kV, 13 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec Diode V DS E sw, 12A, 15 C R DS(on) 1.2 kv 2.1 mj 13 mω Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease of Paralleling Copper Baseplate and Aluminum Nitride Insulator System Benefits Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced System Cost Package 62mm x 16mm x 3mm Applications Induction Heating Solar and Wind Inverters DC/DC Converters Line Regen Drives Battery Chargers Part Number Package Marking CAS12M12BM2 Half-Bridge Module CAS12M12BM2 Maximum Ratings (T C = 25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Notes V DSmax Drain - Source Voltage 1.2 kv V GSmax Gate - Source Voltage -1/+25 V Absolute maximum values V GSop Gate - Source Voltage -5/2 V Recommended operational values I D Continuous MOSFET Drain Current 193 V GS = 2 V, T C = 25 C A 138 V GS = 2 V, T C = 9 C Fig. 26 I D(pulse) Pulsed Drain Current 48 A Pulse width tp limited by T J(max) I F Continuous Diode Forward Current 35 V GS = -5 V, T C = 25 C A 195 V GS = -5 V, T C = 9 C T Jmax Junction Temperature -4 to +15 C T C,T STG Case and Storage Temperature Range -4 to +125 C V isol Case Isolation Voltage 5 kv AC, 5 Hz, 1 min L Stray Stray Inductance 15 nh Measured between terminals 2 and 3 P D Power Dissipation 925 W T C = 25 C, T J = 15 C Fig. 25 Subject to change without notice. 1
2 Electrical Characteristics (T C = 25 C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V (BR)DSS Drain - Source Breakdown Voltage 1.2 kv V GS, = V, I D = 3 μa V GS(th) Gate Threshold Voltage V V DS = 1 V, ID = 6 ma Fig. 7 I DSS Zero Gate Voltage Drain Current 8 3 μa V DS = 1.2 kv, V GS = V 4 15 V DS = 1.2 kv,v GS = V, T J = 15 C I GSS Gate-Source Leakage Current 1 1 na V GS = 2 V, V DS = V R DS(on) g fs On State Resistance Transconductance C iss Input Capacitance 6.3 C oss Output Capacitance.88 C rss Reverse Transfer Capacitance E on Turn-On Switching Energy 1.7 mj E Off Turn-Off Switching Energy.4 mj mω V GS = 2 V, I DS = 12 A V GS = 2 V, I DS = 12 A, T J = 15 C 53.8 V DS = 2 V, IDS = 12 A 48.5 S V DS = 2 V, ID = 12 A, T J = 15 C nf V DS = 1 kv, f = 2 khz, V AC = 25 mv V DD = 6 V, V GS = -5V/+2V I D = 12 A, R G(ext) = 2.5 Ω Load = 142 μh, T J = 15 C Note: IEC Definitions R G (int) Internal Gate Resistance 1.8 Ω f = 2 khz, V AC = 25 mv Q GS Gate-Source Charge 97 Q GD Gate-Drain Charge 118 Q G Total Gate Charge 378 nc V DD= 8 V, V GS = -5V/+2V, I D= 12 A, Per JEDEC24 pg 27 t d(on) Turn-on delay time 38 ns V DD = 6V, V GS = -5/+2V, I D = 12 A, R G(ext) = 2.5 Ω, t r Rise Time 34 ns Timing relative to V DS t d(off) Turn-off delay time 7 ns Note: IEC , pg 83 t f Fall Time 22 ns Inductive load V SD Diode Forward Voltage Q C Total Capacitive Charge 1.1 μc Thermal Characteristics Additional Module Data Fig. 4, 5, 6 Fig. 8 Fig. 16, 17 Fig. 22 Fig. 15 Fig I F = 12 A, V GS = Fig. 1 V I F = 12 A, T J = 15 C, V GS = Fig. 11 I SD = 12A, V DS = 6 V, T J = 25 C, di SD /dt = 3 ka/μs, V GS = -5 V Symbol Parameter Min. Typ. Max. Unit Test Conditions Note R thjcm Thermal Resistance Juction-to-Case for MOSFET Fig. 27 C/W R thjcd Thermal Resistance Juction-to-Case for Diode Fig. 28 Symbol Parameter Max. Unit Test Condtion W Weight 29 g M Mounting Torque 5 Nm To heatsink and terminals Clearance Distance 9 mm Terminal to terminal Creepage Distance 3 mm Terminal to terminal 4 mm Terminal to baseplate 2 CAS12M12BM2,Rev. -
3 Typical Performance 36 3 T J = -4 C tp < 2 µs V GS = 18 V V GS = 2 V 36 3 tp < 2 µs V GS = 18 V V GS = 2 V V GS = 16 V V GS = 14 V V GS = 12 V V GS = 1 V V GS = 16 V V GS = 14 V V GS = 12 V V GS = 1 V Figure 1. Output Characteristics T J = -4 C Figure 2. Output Characteristics T J = 25 C T J = 15 C tp < 2 µs V GS = 14 V V GS = 16 V V GS = 18 V V GS = 2 V V GS = 12 V V GS = 1 V On Resistance, R DS On (P.U.) I DS = 12 A V GS = 2 V t p < 2 µs Junction Temperature, T J ( C) Figure 3. Output Characteristics T J = 15 C Figure 4. Normalized On-Resistance vs. Temperature 35 3 V GS = 2 V t p < 2 µs 3 25 I DS = 12 A t p < 2 µs On Resistance, R DS On (mohms) T J = 15 C T J = -55 C On Resistance, R DS On (mohms) V GS = 14 V V GS = 16 V V GS = 18 V V GS = 2 V Figure 5. On-Resistance vs. Drain Current For Various Temperatures Junction Temperature, T J ( C) Figure 6. On-Resistance vs. Temperature For Various Gate-Source Voltage 3 CAS12M12BM2,Rev. -
4 Typical Performance Conditons V DS = 1 V I DS = 6 ma 24 2 V DS = 2 V tp < 2 µs T J = 15 C Threshold Voltage, V th (V) T J = -4 C Junction Temperature T J ( C) Figure 7. Threshold Voltage vs. Temperature Gate-Source Voltage, V GS (V) Figure 8. Transfer Characteristic for Various Junction Temperatures V GS = -2 V V GS = -2 V V GS = -5 V V GS = V T J = -4 C t p < 2 µs V GS = -5 V V GS = V T J = 25 C t p < 2 µs Figure 9. Diode Characteristic at -4 C Figure 1. Diode Characteristic at 25 C V GS = -5 V V GS = -2 V V GS = V V GS = 5 V V GS = 1 V V GS = 15 V V GS = 2 V V GS = V T J = 15 C t p < 2 µs T J = -4 C 25 t p = 2 µs Figure 11. Diode Characteristic at 15 C Figure rd Quadrant Characteristic at -4 C 4 CAS12M12BM2,Rev. -
5 Typical Performance V GS = V V GS = 5 V V GS = 1 V V GS = 2 V V GS = 15 V V GS = V V GS = 5 V V GS = 1 V V GS = 15 V V GS = 2 V T J = 25 C t p = 2 µs -3 T J = C t p = 2 µs Figure rd Quadrant Characteristic at 25 C Figure rd Quadrant Characteristic at 15 C Gate-Source Voltage, V GS (V) I DS = 12 A I GS = 1 ma V DS = 8 V Capacitance (pf) C iss C oss C rss V AC = 25 mv f = 2 khz Gate Charge, Q G (nc) Figure 15. Gate Charge Characteristics Figure 16. Capacitances vs. Drain-Source Voltage ( - 2 V) 1 1 C iss V AC = 25 mv f = 2 khz 6 5 Capacitance (pf) 1 1 C oss Stored Energy, E OSS (µj) C rss Drain to Source Voltage, V DS (V) Figure 17. Capacitances vs. Drain-Source Voltage ( - 1 kv) Figure 18. Output Capacitor Stored Energy 5 CAS12M12BM2,Rev. -
6 Typical Performance V DD = 6 V R G(ext) = 2.5 Ω V GS = -5/+2 V L = 142 μh E Total V DD = 8 V R G(ext) = 2.5 Ω V GS = -5/+2 V L = 142 μh E Total Switching Loss (mj) E On Switching Loss (mj) E On.5 E Off 1. E Off Drain to Source Current, I DS (A) Drain to Source Current, I DS (A) Figure 19. Inductive Switching Energy vs. Drain Current For V DS = 6V, R G = 2.5 Ω Figure 2. Inductive Switching Energy vs. Drain Current For V DS = 8 V, R G = 2.5 Ω V DD = 6 V I DS =12 A V GS = -5/+2 V L = 142 μh E Total E Total V DD = 6 V R G(ext) = 2.5 Ω I DS =12 A V GS = -5/+2 V L = 142 μh Switching Loss (mj) E On E Off Switching Loss (mj) E On 2.5 E Off External Gate Resistor RG(ext) (Ohms) Junction Temperature, T J ( C) Figure 21. Inductive Switching Energy vs. R G(ext) Figure 22. Inductive Switching Energy vs. Temperature V DD = 6 V I DS = 12 A V GS = -5/+2 V Time (ns) t d (off) t d (on) 15 t r External Gate Resistor, R G(ext) (Ohms) t f Figure 23. Timing vs. R G(ext) Figure 24. Resistive Switching Time Description 6 CAS12M12BM2,Rev. -
7 Typical Performance Maximum Dissipated Power, P tot (W) T J 15 C Drain-Source Continous Current, I DS (DC) (A) T J 15 C Case Temperature, T C ( C) Figure 25. Maximum Power Dissipation (MOSFET) Derating vs. Case Temperature Case Temperature, T C ( C) Figure 26. Continous Drain Current (MOSFET) Derating vs Case Temperature Junction To Case Impedance, Z thjc ( o C/W) 1E-3 1E-3 1E SinglePulse Junction To Case Impedance, Z thjc ( o C/W) 1E-3 1E-3 1E SinglePulse 1E-6 1E-6 1E-6 1E-6 1E-3 1E-3 1E Time, t p (s) Figure 27. MOSFET Junction to Case Thermal Impedance 1E-6 1E-6 1E-6 1E-6 1E-3 1E-3 1E Time, t p (s) Figure 28. Diode Junction to Case Thermal Impedance 1. 1 µs Limited by R DS On 1 ms 1 µs.1 T C = 25 C D =, Parameter: t p ms Figure 29. Maximum Power Dissipation (MOSFET) Derating vs. Case Temperature 7 CAS12M12BM2,Rev. -
8 Schematic Package Dimensions (mm) CAS12M12BM2 8 CAS12M12BM2,Rev. -
9 Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/EC (RoHS2), as implemented January 2, 213. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive V DS overshoots. Please Refer to application note: Design Considerations when using Cree SiC Modules Part 1 and Part 2. [CPWR-AN12, CPWR-AN13] Copyright 214 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 USA Tel: Fax: CAS12M12BM2 Rev. -
10 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Cree, Inc.: CAS12M12BM2
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More informationDistributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BSC22N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS
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