Size Effects in Ferroelectrics (and some reference to ferroics in general) Marty Gregg Queen s University Belfast

Size: px
Start display at page:

Download "Size Effects in Ferroelectrics (and some reference to ferroics in general) Marty Gregg Queen s University Belfast"

Transcription

1 Size Effects in Ferroelectrics (and some reference to ferroics in general) Marty Gregg Queen s University Belfast Outline: Basics of ferroelectricity Critical correlation volume, superparaelectricity and relaxors Influence of boundaries I: strain coupling Influence of boundaries II: depolarising fields Strain and depolarisation effects on ferroelectric domains Size effects on dynamics of ferroelectrics permittivity and switching Ferroelectrics develop reversible electrical polarisation when electric field is applied Field Up Field Down Polarization Voltage Important fundamental features which point to a strong sensitivity to size: Ferroelectricity traditionally described as a cooperative effect below a critical volume ferroelectricity is not thought to be sustained expect ferroelectricity to be destabilised as size is reduced; Critical correlation volume, superparaelectricity and relaxors Even without consideration of boundaries, size effects in ferroelectrics are expected Development of polarisation involves, in most cases, physical distortion of the unit cell strain and polarisation are therefore coupled. Surface / interfacial strain and strain clamping has a major influence; Dipolar nature means that discontinuities / boundaries / surfaces can be charged the field between charged surfaces opposes the dipole formation depolarising fields increase when surfaces are close together. Large group of dipoles aligned significant energy payoff associated with alignment Small group of dipoles energy payoff associated with alignment comparable with thermal energy Certainly at finite temperature, tension between energy reduction of ordering (enthalpic term) and energy reduction from increased entropy leads to a critical volume at which superparaelectricity is possible (similarly with superparamagnetism) Do Superparaelectric systems exist? Optical and electrical behaviour of relaxor electroceramics Cross superparaelectric rationalisation (L. E. Cross Ferroelectrics 76, 24 (987) Cross describes idea that local nanoregions develop superparaelectric polarisation, and within each nanoregion the direction of polarisation is thermally flipping between sets of possible orientations; G. A. Smolenski et al. Sov. Phys. Solid State (96) and other works noted broad peak in permittivity with temperature, not sharp Curie anomaly seen in conventional ferroelectrics proposed Diffuse Phase Transition caused by material having heterogeneous clusters with distribution of Curie temperatures. Did NOT account for frequency dispersion on low T side of permittivity peak Optical studies by Burns and Dacol PRB and Sol. State Comms (983) show while linear measured polarisation (P) is zero at RT, mean of P 2 is nonzero!! Suggests local polar regions which are randomly oriented either in time or space (or both) Explains permittivity response: on cooling thermal excitation decreases such that progressively polar orientations can be controlled by applied field (permittivity initially increases on cooling); eventually, the temperature lowers to the point where timescales required for responding to external field become an issue for some of the superparaelectric polar clusters explains peak in permittivity AND low T frequency dispersion

2 Freezing of the superparaelectric At even lower temperatures the polar nanoclusters are unable to respond to a small external field even in infinite time, and a frozen state develops often called a glass. Colla et al. PRL (995) notes freezing to a glass state, and the fieldinduced ferroelectric state that can be induced by d.c. fields. Now behaviour understood by random field random bond (RFRB) models of nanoscale heterogeneity (see Blinc et al. PRL 83, 424, (999) for example); Any direct evidence of polar nanoclusters Relaxor electroceramics classical case of Pb(Mg /3 Nb 2/3 )O 3 Early critical observations: N. de Mathan et al. JPCM (99) observed PMN on cooling no complete breaking of cubic symmetry BUT at 5K clear diffuse broadening consistent with local symmetry breaking (implied polar distortion in regions ~0nm in diameter). Possible model of structure after T. R. Shrout and J. Fielding, Proc. IEEE Ultrasonics Symp, 2, 7 (990) other direct microscopy studies also clearly point to existence of local (polar) nanoregions. More recent work see Jeong et al. PRL (2005) Influence of boundaries I: Strain coupling Pertsev Phase Diagrams Inherent importance of strain coupling is undeniable manifested in bulk through shapeconserving twins / 90 o domains, BUT..in thin film geometries, particularly those in which misfit strain between film and substrate is small and film thicknesses are less than needed to form misfit dislocations. This recognised in classic phenomenological work by N. A. Pertsev et al. Pertsev and coworkers suggest new phase diagrams for epitaxial thin film ferroelectrics that are clamped to single crystal substrates. Work progressed by others involved in LandauGinzburgDevonshire free energy descriptions of ferroelectrics e.g. Ban and Alpay JAP (2002) / (2003). Experimental testing of Pertsev ideas Under tensile strain? Substrates and thin film electrode systems which induce compressive epitaxial strain relatively easy to make. Some early reports of straincoupled stabilisation of cphase (consistent with Pertsev) e.g. Sinnamon et al APL (2002), but most impressive demonstration found in Haeni et al. Nature (2004) Central idea that strain clamping / strain coupling causes alterations in phase transition behaviour very evident in recent work. 2

3 Strain coupled transition behaviour in nanoscale systems with many interfaces ferroelectric superlattices Strain coupled enhanced polarisation in superlattices Strain coupling in BTO / STO superlattices responsible for development of inplane polarisation in STO at room temperature seen by Rios et al. JPCM (2003), and rationalised by atomistic simulations by Johnston et al PRB (2005) Also watch for work by Dawber and Triscone on superlattice coupling effects Influence of boundaries II: depolarising fields Suspected effects of the depolarising field Progressive loss of ferroelectricity (if no domain formation considered) ve charged surface P E ve charged surface Existence of surfaces which do not offer any charge compensation create voltage and field which opposes the polarisation responsible for the charge in the first place. As distances between surfaces decreases the charge density on the faces is largely unchanged hence depolarisation field dramatically increases in nanoscale objects. Equivalent modelling with acknowledgement of surface effects What about suppression of ferroelectricity in experiment? Shaoping Li et al. Phys. Lett. A 22 (996) Vendik and Zubko JAP (2000) In thin films of PbTiO 3, while Tc is progressively suppressed with reduced thickness ferroelectricity persists. Above figure (Fong et al. PRL 2006) relates to compensating surfaces, but similar in noncompensating conditions with formation of domains holding stability of ferroelectricity (see next overhead). 3

4 Other experimental observations thin films and nanowires SPMwritten bits surprisingly stable when very small indeed in nanowires and thin film media Yun et al. Nanoletters (2002) nonaxial remanent polarisation stable at RT on 2nm single crystal BaTiO 3 nanowire Streiffer et al. PRL (2002) thin film PbTiO 3 Tc suppressed, but RT ferroelectricity remains. Depolarisation field effects negated by 80 o domains Tybell et al. PRL (2002) SPM outofplane switching in thin film PZT FE stability down to ultrananoscale in isolated islands is less clear Strain and depolarisation effects on ferroelectric domains Islands cut from thin films by FIB (Ganpule et al. APL 999) show ferroelectric response down to ~00nm diameter Islands examined by Roelofs et al. APL (2002) suggest loss of ferroelectricity below diameter ~20nm ve charged surface P E ve charged surface Domains minimise the macroscopic manifestation of the depolarising field Shape contraint at surfaces and boundaries induces 90 o domain formation Domains can also form in order to accommodate macroscopic shape constraints shape compensating domains Basic phenomenological physics for domain periodicities variation with size Electrostatic energy associated with free surface d F = Uw γ w Total domain wall energy d w 80 o domains Under equilibrium: F d = 0 = U γ 2 w w 2 d w = γ U Kittel, Phys. Rev. 70, 965 (946); Zhirnov, Sov. Phys. JETP 35, 822 (959); Mitsui & Furuichi, Phys. Rev. 90, 93 (953); Roytburd, Phys. Status Solidi A 37, 329 (976). 4

5 Study domains imaged by STEM in BaTiO 3 slabs of controlled thickness (cut with FIB) Find Kittel s law obeyed across 6 orders of magnitude a 200 nm b 0.25 Å c 0.0 Å 90 o domains Region for selected area diffraction {0} domain walls, Period in this case ~50nm from both real space and reciprocal space measurements Schilling et al., PRB (2006) log 0 [domain period (nm)] 0 5 Mitsui's data on Rochelle Salt (gradual cooling) Mitsui's data on Rochelle Salt (sudden cooling) Schilling's data on BaTiO 3 Streiffer's data on PbTiO 3 F α Streiffer's data on PbTiO 3 F β Dumas's data on Co Sparks's data on Ni Wu's data on LSMO log 0 [thickness (nm)] Kittel s law W=kd /2 holds for ferroics across 6 orders of mag. Constant of proportionality similar within each ferroic subgroup. Schilling et al., APL (2006) Ferroelectric columns / wires / picture frames Stripe domains; Domain periodicity response sensitive to additional size constraint (being thin in more than one dimension) 300nm x z d y d x Domain period (λ) (nm) lamellae columns (Thickness) /2 (nm) /2 Kittel: y Gradient of plot / 2 w = γ d U U / 2 Flux / Field Closure Domains in Ferroelectric Nanodots C. Kittel, Rev. Mod. Phys., 2, 54 (949) ~5nm Modelling of ferroelectric dots and nanowires 200nm ~0nm Naumov et al. Nature, 432, 737 (2004) and J. F. Scott, Nature Materials, 4, 3 (2005) Fu and Bellaiche PRL, 9, (2003) 5

6 Ferroic Vortices in Minerals Vortex core observations in Ferromagnets Shinjo et al. Science, 289, 930 (2000) Harrison et al., PNAS, 99, 6556 (2002) Wachowiak et al., Science, 298, 577 (2002) N. D. Mermin, Rev. Mod. Phys., 5, 59 (979) More complex morphologies ferroelectric solenoids? Suggests nanoscale ferroelectric solenoid Wachowiak et al., Science, 298, 577 (2002) E Gorbatsevich & Kopaev, Ferroelectrics, 6, 32 (994) and J. F. Scott, Nature Materials, 4, 3 (2005) 250nm Toroidal Nanoscale Ferroelectrics Domain imaging clearly shows no evidence of vortices down to ~00nm Secondary electron images generated by Gaion primary beam on FIB 200nm 200nm 5 μm Conventional {0} oriented domain walls, with predictable periodicities. Need to push dimensions down below that achievable with FIB alone or look at systems in which polar rotation is easier (MPB systems or relaxors below T f ). 6

7 Ferroelectric nanorings made by TEM sectioning PZTinternally coated nanoporous alumina Rings using latex sphere templates Nanosphere deposition Polystryene Zhu et al., APL 89, 2293 (2006) rings made, but not yet evidence of vortex domains Metal deposition Ar Ion milling Removal of spheres Aizpurua et al., PRL 90, 5740 (2003) Nanorings PZT nanoring arrays Size effects on dynamics of ferroelectrics permittivity and switching Move from bulk / single crystal to thin film results in dramatic collapse in lowfield permittivity, smearing of Curie anomaly, and apparent migration of Curie peak mainly to lower temperatures: Shaw et al. APL (999), also Parker et al. APL (2002) 300nm As yet no evidence of vortex domain formation Reduction in permittivity rationalised by series capacitance dead layer Origin of the series capacitance? Possibilities: C. A. Mead, PRL, 6, 545 (96) (i) Distinct layer of low permittivity in the ferroelectric layer Inverse capacitance Parasitic Series Capacitance C eff = C bulk K (ii) Electronic structure of ferroelectricelectrode interface Schottky barriers etc. (iii) Polarisation suppression at interface (Vendik JAP 2000) (iv) Progressive hardening of polarisationrelated softmodes (Sirenko et al. Nature 2000) (v) Capacitive effect due to nonideal field screening WITHIN the electrode (see work by Dawber) Film Thickness 7

8 What does experiment tell us about origin of series capacitance? Classical work by Basceri et al. JAP one of the earliest attempts to identify the electrical characteristics of the series cap component. Broadly temperature independent; bias field tends to reduce the influence of the series capacitance Physical extent of any distinct layer if in the ferroelectric? Work by Sinnamon et al. APL 200: considers IF a distinct layer of lower permittivity exists within the ferroelectric at the ferroelectricelectrode boundary, then on continuing to reduce the thickness of thin film capacitors, eventually reach a point where the entire structure is composed of the low permittivity layer. At this point the series capacitor model must break down does it? Dashed line is series cap model fitted to data for thin film capacitors >70nm in thickness. Other capacitor structures down to 7.5nm lie on the same function therefore series cap still holds, and any deadlayer must be of total thickness <7.5nm. Recently extended by McAneney to <5nm. Coercive field increases with decreases in film thickness Kay and Dunn (962) Perimeter switching effects Taken from Dawber et al. JPCM (2003) Kinetics of switching dependent on the perimeter of the micro / nano capacitor (Samsung PZT FRAM processing?) 8

From 180º stripe domains to more exotic patterns of polarization in ferroelectric nanostructures. A first principles view

From 180º stripe domains to more exotic patterns of polarization in ferroelectric nanostructures. A first principles view From 180º stripe domains to more exotic patterns of polarization in ferroelectric nanostructures. A first principles view Pablo Aguado-Puente Javier Junquera Ferroelectricity: Basic definitions Existence

More information

Ferroelectric materials contain one or more polar axes along which a spontaneous

Ferroelectric materials contain one or more polar axes along which a spontaneous Chapter 3 Ferroelectrics 3.1 Definition and properties Ferroelectric materials contain one or more polar axes along which a spontaneous polarization can be developed below the material s Curie temperature.

More information

Toroidal ferroelectricity in PbTiO 3 nanoparticles

Toroidal ferroelectricity in PbTiO 3 nanoparticles 1 Toroidal ferroelectricity in PbTiO 3 nanoparticles M. G. Stachiotti, and M. Sepliarsky Instituto de Física Rosario, Universidad Nacional de Rosario, 27 de Febrero 210 Bis, (2000) Rosario, Argentina.

More information

SUPPLEMENTARY MATERIAL

SUPPLEMENTARY MATERIAL SUPPLEMENTARY MATERIAL Multiphase Nanodomains in a Strained BaTiO3 Film on a GdScO3 Substrate Shunsuke Kobayashi 1*, Kazutoshi Inoue 2, Takeharu Kato 1, Yuichi Ikuhara 1,2,3 and Takahisa Yamamoto 1, 4

More information

5. Building Blocks I: Ferroelectric inorganic micro- and nano(shell) tubes

5. Building Blocks I: Ferroelectric inorganic micro- and nano(shell) tubes 5. Building Blocks I: Ferroelectric inorganic micro- and nano(shell) tubes 5.1 New candidates for nanoelectronics: ferroelectric nanotubes In this chapter, one of the core elements for a complex building

More information

Epitaxial piezoelectric heterostructures for ultrasound micro-transducers

Epitaxial piezoelectric heterostructures for ultrasound micro-transducers 15 th Korea-U.S. Forum on Nanotechnology Epitaxial piezoelectric heterostructures for ultrasound micro-transducers Seung-Hyub Baek Center for Electronic Materials Korea Institute of Science and Technology

More information

Supplementary Figures:

Supplementary Figures: Supplementary Figures: Supplementary Figure 1 Cross-sectional morphology and Chemical composition. (a) A low-magnification dark-field TEM image shows the cross-sectional morphology of the BWO thin film

More information

Classification of Dielectrics & Applications

Classification of Dielectrics & Applications Classification of Dielectrics & Applications DIELECTRICS Non-Centro- Symmetric Piezoelectric Centro- Symmetric Pyroelectric Non- Pyroelectric Ferroelectrics Non-Ferroelectric Piezoelectric Effect When

More information

PHASE-FIELD SIMULATION OF DOMAIN STRUCTURE EVOLUTION IN FERROELECTRIC THIN FILMS

PHASE-FIELD SIMULATION OF DOMAIN STRUCTURE EVOLUTION IN FERROELECTRIC THIN FILMS Mat. Res. Soc. Symp. Proc. Vol. 652 2001 Materials Research Society PHASE-FIELD SIMULATION OF DOMAIN STRUCTURE EVOLUTION IN FERROELECTRIC THIN FILMS Y. L. Li, S. Y. Hu, Z. K. Liu, and L. Q. Chen Department

More information

Introduction to solid state physics

Introduction to solid state physics PHYS 342/555 Introduction to solid state physics Instructor: Dr. Pengcheng Dai Professor of Physics The University of Tennessee (Room 407A, Nielsen, 974-1509) Chapter 13: Dielectrics and ferroelectrics

More information

Phase Transitions in Relaxor Ferroelectrics

Phase Transitions in Relaxor Ferroelectrics Phase Transitions in Relaxor Ferroelectrics Matthew Delgado December 13, 2005 Abstract This paper covers the properties of relaxor ferroelectrics and considers the transition from the paraelectric state

More information

MatSci 224 Magnetism and Magnetic. November 5, 2003

MatSci 224 Magnetism and Magnetic. November 5, 2003 MatSci 224 Magnetism and Magnetic Materials November 5, 2003 How small is small? What determines whether a magnetic structure is made of up a single domain or many domains? d Single domain d~l d d >> l

More information

Ferroelectricity. Phase transition. Material properties. 4/12/2011 Physics 403 Spring

Ferroelectricity. Phase transition. Material properties. 4/12/2011 Physics 403 Spring Ferroelectricity. Phase transition. Material properties 4/12/211 Physics 43 Spring 211 1 Ferroelectricity. outline Ferroelectricity. Definition Discovery Main properties Phenomenological theory Some materials

More information

Lead Titanate films on Dysprosium Scandate with a Strontium Ruthenate Buffer Layer grown by Pulsed Laser Deposition

Lead Titanate films on Dysprosium Scandate with a Strontium Ruthenate Buffer Layer grown by Pulsed Laser Deposition Lead Titanate films on Dysprosium Scandate with a Strontium Ruthenate Buffer Layer grown by Pulsed Laser Deposition By: Brian Smith November 2009 Supervised by: Beatriz Noheda Abstract Ferroelectric materials

More information

Room-temperature tunable microwave properties of strained SrTiO 3 films

Room-temperature tunable microwave properties of strained SrTiO 3 films JOURNAL OF APPLIED PHYSICS VOLUME 96, NUMBER 11 1 DECEMBER 2004 Room-temperature tunable microwave properties of ed SrTiO 3 films Wontae Chang, a) Steven W. Kirchoefer, Jeffrey M. Pond, Jeffrey A. Bellotti,

More information

Techniques for inferring M at small scales

Techniques for inferring M at small scales Magnetism and small scales We ve seen that ferromagnetic materials can be very complicated even in bulk specimens (e.g. crystallographic anisotropies, shape anisotropies, local field effects, domains).

More information

Stability of a Ferroelectric Phase with Electrical Domains in Multilayers

Stability of a Ferroelectric Phase with Electrical Domains in Multilayers Stability of a Ferroelectric Phase with Electrical Domains in Multilayers I. B. Misirlioglu Faculty of Engineering and Natural Sciences, Sabanci University, Tuzla/Orhanli 34956 Istanbul, Turkey Multilayer

More information

Micro-Brilouin scattering study of field cooling effects on ferroelectric relaxor PZN-9%PT single crystals

Micro-Brilouin scattering study of field cooling effects on ferroelectric relaxor PZN-9%PT single crystals Micro-Brilouin scattering study of field cooling effects on ferroelectric relaxor PZN-9%PT single crystals Jae-Hyeon Ko 1 *, Do Han Kim 2, Seiji Kojima 2, D. C. Feng 3 1 Department of Physics, Hallym University,

More information

Ferroelectricity. Phase transition. Material properties

Ferroelectricity. Phase transition. Material properties Ferroelectricity. Phase transition. Material properties BaTiO 3 DKDP KDP PZN-PT(9%) PMN-PT(30%) PMN-PT(40%) 4/1/2016 Physics 403 Spring 2016 1 Ferroelectricity. outline Ferroelectricity. Definition Discovery

More information

Effect of interfacial dislocations on ferroelectric phase stability and domain morphology in a thin film a phase-field model

Effect of interfacial dislocations on ferroelectric phase stability and domain morphology in a thin film a phase-field model JOURNAL OF APPLIED PHYSICS VOLUME 94, NUMBER 4 15 AUGUST 2003 Effect of interfacial dislocations on ferroelectric phase stability and domain morphology in a thin film a phase-field model S. Y. Hu, Y. L.

More information

Jan Petzelt, Stanislav Kamba and Jiri Hlinka

Jan Petzelt, Stanislav Kamba and Jiri Hlinka New developments in advanced functional ceramics. Ed. L. Mitoseriu, Indian Series of Appl. Phys., Trivandrum, Transworld Research Network, in press. FERROELECTRIC SOFT MODES IN CERAMICS AND FILMS Jan Petzelt,

More information

Si, X. X. Xi, and Q. X. JIA

Si, X. X. Xi, and Q. X. JIA LA-UR-01-1929 Approved for public release; distribution is unlimited. Title: DIELECTRIC PROPERTIES OF Ba0.6Sr0.4TiO3 THIN FILMS WITH VARIOUS STRAIN STATES Author(s): B. H. PARK, E. J. PETERSON, J. LEE,

More information

Relaxation of a Strained Elastic Film on a Viscous Layer

Relaxation of a Strained Elastic Film on a Viscous Layer Mat. Res. Soc. Symp. Proc. Vol. 695 Materials Research Society Relaxation of a Strained Elastic Film on a Viscous Layer R. Huang 1, H. Yin, J. Liang 3, K. D. Hobart 4, J. C. Sturm, and Z. Suo 3 1 Department

More information

File Name: Supplementary Information Description: Supplementary Figures, Supplementary Table, Supplementary Notes and Supplementary References.

File Name: Supplementary Information Description: Supplementary Figures, Supplementary Table, Supplementary Notes and Supplementary References. File Name: Supplementary Information Description: Supplementary Figures, Supplementary Table, Supplementary Notes and Supplementary References. File Name: Supplementary Movie 1 Description: Projections

More information

Roger Johnson Structure and Dynamics: Displacive phase transition Lecture 9

Roger Johnson Structure and Dynamics: Displacive phase transition Lecture 9 9.1. Summary In this Lecture we will consider structural phase transitions characterised by atomic displacements, which result in a low temperature structure that is distorted compared to a higher temperature,

More information

Electric displacement as the fundamental variable in electronic-structure calculations

Electric displacement as the fundamental variable in electronic-structure calculations Electric displacement as the fundamental variable in electronic-structure calculations CECAM - Centre Européen de Calcul Atomique et Moléculaire EPF Lausanne, Switzerland Conference UC Davis, 6/23/2009

More information

Formation of vortex and antivortex polarization states in ferroelectric films

Formation of vortex and antivortex polarization states in ferroelectric films Chapter 4 Formation of vortex and antivortex polarization states in ferroelectric films 4.1 Introduction Circularly ordered structural phase is denoted as vortex state which is found in ferromagnets [1,

More information

A Nanoscale Shape Memory Oxide

A Nanoscale Shape Memory Oxide A Nanoscale Shape Memory Oxide Jinxing Zhang 1,2*, Xiaoxing Ke 3*, Gaoyang Gou 4, Jan Seidel 2,5, Bin Xiang 6,9, Pu Yu 2,7, Wen-I Liang 8, Andrew M. Minor 9,10, Ying-hao Chu 8, Gustaaf Van Tendeloo 3,

More information

Adaptive ferroelectric states in systems with low domain wall energy: Tetragonal microdomains

Adaptive ferroelectric states in systems with low domain wall energy: Tetragonal microdomains Adaptive ferroelectric states in systems with low domain wall energy: Tetragonal microdomains Y. M. Jin, Y. U. Wang, A. G. Khachaturyan, J. F. Li, and D. Viehland Citation: Journal of Applied Physics 94,

More information

Publication I. c 2010 American Physical Society. Reprinted with permission.

Publication I. c 2010 American Physical Society. Reprinted with permission. Publication I Tyunina, M., Narkilahti, J., Plekh, M., Oja, R., Nieminen, R.M., Dejneka, A., and Trepakov, V. Evidence for Strain-Induced Ferroelectric Order in Epitaxial Thin-Film KTaO 3. Physical Review

More information

Electrostatic charging and redox effects in oxide heterostructures

Electrostatic charging and redox effects in oxide heterostructures Electrostatic charging and redox effects in oxide heterostructures Peter Littlewood 1,2,3 Nick Bristowe 3 & Emilio Artacho 3,6 Miguel Pruneda 4 and Massimiliano Stengel 5 1 Argonne National Laboratory

More information

Electric Field- and Temperature-Induced Phase Transitions in High-Strain Relaxor- Based Ferroelectric Pb(Mg1 /3Nb2/3)1 - xtixo3 Single Crystals

Electric Field- and Temperature-Induced Phase Transitions in High-Strain Relaxor- Based Ferroelectric Pb(Mg1 /3Nb2/3)1 - xtixo3 Single Crystals Electric Field- and Temperature-Induced Phase Transitions in High-Strain Relaxor- Based Ferroelectric Pb(Mg1 /3Nb2/3)1 - xtixo3 Single Crystals Authors: R. R. Chien, V. Hugo Schmidt, C.-S. Tu, F.-T. Wang,

More information

Manipulating Ferroelectric Domains in Nanostructures Under Electron Beams

Manipulating Ferroelectric Domains in Nanostructures Under Electron Beams Manipulating Ferroelectric Domains in Nanostructures Under Electron Beams Ahluwalia, R., Ng, N., Schilling, A., McQuaid, R. G. P., Evans, D. M., Gregg, J. M.,... Scott, J. F. (2013). Manipulating Ferroelectric

More information

Making the Invisible Visible: Probing Antiferromagnetic Order in Novel Materials

Making the Invisible Visible: Probing Antiferromagnetic Order in Novel Materials Making the Invisible Visible: Probing Antiferromagnetic Order in Novel Materials Elke Arenholz Lawrence Berkeley National Laboratory Antiferromagnetic contrast in X-ray absorption Ni in NiO Neel Temperature

More information

Smart elastomers a touch of robotics

Smart elastomers a touch of robotics Smart elastomers a touch of robotics Chris Bowen, Vince Coveney, Hamideh Khanbareh, Mengying Xie Department of Mechanical Engineering, University of Bath 30 June 2017 BRL Introduction 1. Fundamentals of

More information

High-frequency dielectric spectroscopy in disordered ferroelectrics

High-frequency dielectric spectroscopy in disordered ferroelectrics IMSPEMAS 3 High-frequency dielectric spectroscopy in disordered ferroelectrics J. Petzelt Institute of Physics, Acad. Sci. Czech Rep., Prague Collaborators: Institute of Physics, Prague: V. Železný, S.

More information

Temperature-dependent phase transitions in Pb(Zn1/3Nb2/3)0.93Ti0.07O3 crystal

Temperature-dependent phase transitions in Pb(Zn1/3Nb2/3)0.93Ti0.07O3 crystal Temperature-dependent phase transitions in Pb(Zn1/3Nb2/3)0.93Ti0.07O3 crystal Authors: R. R. Chien, V. Hugo Schmidt, Chi-Shun Tu, F. -T. Wang & L. C. Lim This is an Accepted Manuscript of an article published

More information

Ferroelectric Tunnel Junctions: A Theoretical Approach

Ferroelectric Tunnel Junctions: A Theoretical Approach Forschungszentrum Jülich Ferroelectric Tunnel Junctions: A Theoretical Approach H. Kohlstedt, A. Petraru, R. Waser Forschungszentrum Jülich GmbH, Institut für Festkörperforschung and CNI, the Center of

More information

Ferroelectric nanostructures for future high-density non-volatile memory applications - preparation methods, microstructure, and physical properties

Ferroelectric nanostructures for future high-density non-volatile memory applications - preparation methods, microstructure, and physical properties Autumn School, Berlin, 7.10.2005 Dietrich Hesse and Marin Alexe Max-Planck-Institut für Mikrostrukturphysik, Halle Ferroelectric nanostructures for future high-density non-volatile memory applications

More information

CHAPTER 6 DIELECTRIC AND CONDUCTIVITY STUDIES OF ZIRCONIUM TIN TITANATE (ZST)

CHAPTER 6 DIELECTRIC AND CONDUCTIVITY STUDIES OF ZIRCONIUM TIN TITANATE (ZST) 123 CHAPTER 6 DIELECTRIC AND CONDUCTIVITY STUDIES OF ZIRCONIUM TIN TITANATE (ZST) 6.1 INTRODUCTION We know that zirconium tin titanate ceramics are mostly used in microwave frequency applications. Previous

More information

Depolarization of a piezoelectric film under an alternating current field

Depolarization of a piezoelectric film under an alternating current field JOURNAL OF APPLIED PHYSICS 101, 054108 2007 Depolarization of a piezoelectric film under an alternating current field K. W. Kwok, a M. K. Cheung, H. L. W. Chan, and C. L. Choy Department of Applied Physics

More information

Mesoscale flux-closure domain formation in singlecrystal

Mesoscale flux-closure domain formation in singlecrystal University of Nebraska - Lincoln DigitalCommons@University of Nebraska - Lincoln Alexei Gruverman Publications Research Papers in Physics and Astronomy 2011 Mesoscale flux-closure domain formation in singlecrystal

More information

Thin Film Bi-based Perovskites for High Energy Density Capacitor Applications

Thin Film Bi-based Perovskites for High Energy Density Capacitor Applications ..SKELETON.. Thin Film Bi-based Perovskites for High Energy Density Capacitor Applications Colin Shear Advisor: Dr. Brady Gibbons 2010 Table of Contents Chapter 1 Introduction... 1 1.1 Motivation and Objective...

More information

Interfacial Coherency and Ferroelectricity of BaTiO 3 /SrTiO 3 Superlattice Films

Interfacial Coherency and Ferroelectricity of BaTiO 3 /SrTiO 3 Superlattice Films Boise State University ScholarWorks Physics Faculty Publications and Presentations Department of Physics 12-18-2007 Interfacial Coherency and Ferroelectricity of BaTiO 3 /SrTiO 3 Superlattice Films Y.

More information

J 12 J 23 J 34. Driving forces in the nano-magnetism world. Intra-atomic exchange, electron correlation effects: Inter-atomic exchange: MAGNETIC ORDER

J 12 J 23 J 34. Driving forces in the nano-magnetism world. Intra-atomic exchange, electron correlation effects: Inter-atomic exchange: MAGNETIC ORDER Driving forces in the nano-magnetism world Intra-atomic exchange, electron correlation effects: LOCAL (ATOMIC) MAGNETIC MOMENTS m d or f electrons Inter-atomic exchange: MAGNETIC ORDER H exc J S S i j

More information

Curie-Weiss law in thin-film ferroelectrics

Curie-Weiss law in thin-film ferroelectrics JOURNAL OF APPLIED PHYSICS 100, 044114 006 Curie-Weiss law in thin-film ferroelectrics Biao Wang School of Physics and Engineering, Sun Yat-sen University, Guangzhou, China C. H. Woo a Department of Electronic

More information

Effects of substrate on the dielectric and tunable properties of epitaxial SrTiO 3 thin films

Effects of substrate on the dielectric and tunable properties of epitaxial SrTiO 3 thin films JOURNAL OF APPLIED PHYSICS 100, 114107 2006 Effects of substrate on the dielectric and tunable properties of epitaxial SrTiO 3 thin films J. H. Hao a Department of Applied Physics, The Hong Kong Polytechnic

More information

10. Magnetoelectric Switching

10. Magnetoelectric Switching Beyond CMOS computing 10. Magnetoelectric Switching Dmitri Nikonov Dmitri.e.nikonov@intel.com 1 Outline Magnetoelectric effect to improve spintronic switching Review of experiments on magnetoelectric switching:

More information

Domain Structures in Epitaxial Ferroelectric Thin Films

Domain Structures in Epitaxial Ferroelectric Thin Films Domain Structures in Epitaxial Ferroelectric Thin Films By: Brian Smith S1711377 Supervised by: Prof. dr. Beatrix Noheda February 2009 1 TABLE OF CONTENTS Introduction. 3 1. Background 4 2. Experimental..

More information

Monte Carlo Simulation of Ferroelectric Domain Structure: Electrostatic and Elastic Strain Energy Contributions

Monte Carlo Simulation of Ferroelectric Domain Structure: Electrostatic and Elastic Strain Energy Contributions Monte Carlo Simulation of Ferroelectric Domain Structure: Electrostatic and Elastic Strain Energy Contributions B.G. Potter, Jr., B.A. Tuttle, and V. Tikare Sandia National Laboratories Albuquerque, NM

More information

Exchange bias in core/shell magnetic nanoparticles: experimental results and numerical simulations

Exchange bias in core/shell magnetic nanoparticles: experimental results and numerical simulations Exchange bias in core/shell magnetic nanoparticles: experimental results and numerical simulations Xavier Batlle, A. Labarta, Ò. Iglesias, M. García del Muro and M. Kovylina Goup of Magnetic Nanomaterials

More information

Christian Ratsch, UCLA

Christian Ratsch, UCLA Strain Dependence of Microscopic Parameters and its Effects on Ordering during Epitaxial Growth Christian Ratsch, UCLA Institute for Pure and Applied Mathematics, and Department of Mathematics Collaborators:

More information

Graded Ferroelectric Capacitors with Robust Temperature Characteristics. Abstract

Graded Ferroelectric Capacitors with Robust Temperature Characteristics. Abstract Preprint Graded Ferroelectric Capacitors with Robust Temperature Characteristics Mohamed Y. El-Naggar, Kaushik Dayal, David G. Goodwin, and Kaushik Bhattacharya Division of Engineering & Applied Science

More information

Anelastic relaxor behavior of Pb(Mg 1/3 Nb 2/3 )O 3

Anelastic relaxor behavior of Pb(Mg 1/3 Nb 2/3 )O 3 Anelastic relaxor behavior of Pb(Mg 1/3 Nb 2/3 )O 3 Hana Uršič 1 and Dragan Damjanovic 2, * 1 Electronic Ceramics Department, Jožef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, Slovenia 2 Ceramics

More information

CHAPTER-4 Dielectric Study

CHAPTER-4 Dielectric Study CHAPTER-4 Dielectric Study Dielectric Study 4.1 Introduction The characterization of dielectric ceramics has received considerable scientific interest because of their enormous applications in electronic

More information

Pressure as a Probe of the Physics of ABO 3 Relaxor Ferroelectrics

Pressure as a Probe of the Physics of ABO 3 Relaxor Ferroelectrics Pressure as a Probe of the Physics of ABO 3 Relaxor Ferroelectrics G. A. Samara Sandia National Laboratories, Albuquerque, NM 87185 Abstract. Results on a variety of mixed ABO 3 oxides have revealed a

More information

Synthesis and Ferroelectric Properties of KNO 3 films

Synthesis and Ferroelectric Properties of KNO 3 films Synthesis and Ferroelectric Properties of KNO 3 films Shahid Ramay and Muhammad Sabieh Anwar LUMS School of Science and Engineering Friday, August, 20, 2010 Potassium nitrate (KNO 3 ) shows ferroelectric

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION Insulating Interlocked Ferroelectric and Structural Antiphase Domain Walls in Multiferroic YMnO 3 T. Choi 1, Y. Horibe 1, H. T. Yi 1,2, Y. J. Choi 1, Weida. Wu 1, and S.-W. Cheong

More information

Vortex Ferroelectric Domains. Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE

Vortex Ferroelectric Domains. Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE Vortex Ferroelectric Domains A. Gruverman, 1 D. Wu, 2 H.-J. Fan, 3 I. Vrejoiu, 4 M. Alexe, 4 R. J. Harrison, 3 and J. F. Scott 3 1 Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln,

More information

Mapping Atomic Structure at Epitaxial Interfaces

Mapping Atomic Structure at Epitaxial Interfaces Mapping Atomic Structure at Epitaxial Interfaces Roy Clarke, University of Michigan, Ann Arbor, MI Opportunities for interface science at the ERL royc@umich.edu ERL X-ray Science Workshop: Almost Impossible

More information

Stabilization of highly polar BiFeO 3 like structure: a new interface design route for enhanced ferroelectricity in artificial perovskite superlattice

Stabilization of highly polar BiFeO 3 like structure: a new interface design route for enhanced ferroelectricity in artificial perovskite superlattice Stabilization of highly polar BiFeO 3 like structure: a new interface design route for enhanced ferroelectricity in artificial perovskite superlattice Speaker: Xifan Wu Temple University Outline Part I.

More information

Depth profile study of ferroelectric PbZr 0.2 Ti 0.8 O 3 films

Depth profile study of ferroelectric PbZr 0.2 Ti 0.8 O 3 films JOURNAL OF APPLIED PHYSICS VOLUME 92, NUMBER 11 1 DECEMBER 2002 Depth profile study of ferroelectric PbZr 0.2 Ti 0.8 O 3 films Y. Li, V. Nagarajan, S. Aggarwal, R. Ramesh, L. G. Salamanca-Riba, and L.

More information

Nanostructuring Ferroelectrics via Focused Ion Beam Methodologies

Nanostructuring Ferroelectrics via Focused Ion Beam Methodologies Nanostructuring Ferroelectrics via Focused Ion Beam Methodologies Burns, S. R., Gregg, J. M., & Nagarajan, V. (2016). Nanostructuring Ferroelectrics via Focused Ion Beam Methodologies. Advanced Functional

More information

Microelectromechanical systems (MEMS) have become an increasingly important area of

Microelectromechanical systems (MEMS) have become an increasingly important area of 1 Chapter 1 Introduction 1.1 Background Microelectromechanical systems (MEMS) have become an increasingly important area of technology. This is due to the premise that the efficiencies of high volume production

More information

Spontaneous lateral composition modulation in InAlAs and InGaAs short-period superlattices

Spontaneous lateral composition modulation in InAlAs and InGaAs short-period superlattices Physica E 2 (1998) 325 329 Spontaneous lateral composition modulation in InAlAs and InGaAs short-period superlattices D.M. Follstaedt *, R.D. Twesten, J. Mirecki Millunchick, S.R. Lee, E.D. Jones, S.P.

More information

High-Field Conduction in Barium Titanate. F. D. Morrison, P. Zubko, D. J. Jung, and J. F. Scott

High-Field Conduction in Barium Titanate. F. D. Morrison, P. Zubko, D. J. Jung, and J. F. Scott High-Field Conduction in Barium Titanate F. D. Morrison, P. Zubko, D. J. Jung, and J. F. Scott Centre for Ferroics, Earth Sciences Department, University of Cambridge, Cambridge CB2 3EQ, U. K. P. Baxter,

More information

Specific heat and heat conductivity of the BaTiO 3 polycrystalline films with the thickness in the range nm

Specific heat and heat conductivity of the BaTiO 3 polycrystalline films with the thickness in the range nm Specific heat and heat conductivity of the BaTiO 3 polycrystalline films with the thickness in the range 20 1100 nm B.A.Strukov, S.T.Davitadze, S.N.Kravchun, S.A.Taraskin, B.M.Goltzman 1, V.V.Lemanov 1

More information

Nanostructured Ferroelectrics: Fabrication and Structure Property Relations

Nanostructured Ferroelectrics: Fabrication and Structure Property Relations Nanostructured Ferroelectrics: Fabrication and Structure Property Relations Hee Han, * Yunseok Kim, Marin Alexe, Dietrich Hesse, and Woo Lee * With the continued demand for ultrahigh density ferroelectric

More information

Mechanism of Polarization Fatigue in BiFeO 3 : the Role of Schottky Barrier

Mechanism of Polarization Fatigue in BiFeO 3 : the Role of Schottky Barrier Mechanism of Polarization Fatigue in BiFeO 3 : the Role of Schottky Barrier Yang Zhou, 1 Xi Zou, 1 Lu You, 1 Rui Guo, 1 Zhi Shiuh Lim, 1 Lang Chen, 1 Guoliang Yuan, 2,a) and Junling Wang 1,b) 1 School

More information

A constant potential of 0.4 V was maintained between electrodes 5 and 6 (the electrode

A constant potential of 0.4 V was maintained between electrodes 5 and 6 (the electrode (a) (b) Supplementary Figure 1 The effect of changing po 2 on the field-enhanced conductance A constant potential of 0.4 V was maintained between electrodes 5 and 6 (the electrode configuration is shown

More information

Magnetic tunnel junctions using Co-based Heusler alloy electrodes

Magnetic tunnel junctions using Co-based Heusler alloy electrodes Magnetic tunnel junctions using Co-based Heusler alloy electrodes 1 Half-metallic Heusler alloy thin films for spintronic devices E F E Energy gap Co 2 YZ: L2 1 structure 2a MgO.5957 nm a Co.5654 2MnSi

More information

Leakage Mechanisms. Thin films, fully depleted. Thicker films of interest for higher voltage applications. NC State

Leakage Mechanisms. Thin films, fully depleted. Thicker films of interest for higher voltage applications. NC State Leakage Mechanisms Thin films, fully depleted Leakage controlled by combined thermionic / field emission across the Schottky barrier at the film-electrode interfaces. Film quality effects barrier height,

More information

Electrical Characterization with SPM Application Modules

Electrical Characterization with SPM Application Modules Electrical Characterization with SPM Application Modules Metrology, Characterization, Failure Analysis: Data Storage Magnetoresistive (MR) read-write heads Semiconductor Transistors Interconnect Ferroelectric

More information

Institut des NanoSciences de Paris

Institut des NanoSciences de Paris CNRS / Photothèque Cyril Frésillon Institut des NanoSciences de Paris Polarity in low dimensions: MgO nano-ribbons on Au(111) J. Goniakowski, C. Noguera Institut des Nanosciences de Paris, CNRS & Université

More information

Newcastle University eprints

Newcastle University eprints Newcastle University eprints Ponon NK, Appleby DJR, Arac E, Kwa KSK, Goss JP, Hannemann U, Petrov PK, Alford NM, O'Neill A. Impact of Crystalline Orientation on the Switching Field in Barium Titanate Using

More information

Dielectric relaxation modes in bismuth-doped SrTiO 3 :

Dielectric relaxation modes in bismuth-doped SrTiO 3 : PHYSICAL REVIEW B VOLUME 59, NUMBER 10 1 MARCH 1999-II Dielectric relaxation modes in bismuth-doped SrTiO 3 : The relaxor behavior Chen Ang,* Zhi Yu,* P. Lunkenheimer, J. Hemberger, and A. Loidl Institut

More information

Lecture 10 Phase transitions.

Lecture 10 Phase transitions. Lecture 10 Phase transitions. 1 Introduction The study of phase transitions is at the very core of structural condensed-matter physics, to the point that one might consider all we have learned in the previous

More information

Fabrication and Domain Imaging of Iron Magnetic Nanowire Arrays

Fabrication and Domain Imaging of Iron Magnetic Nanowire Arrays Abstract #: 983 Program # MI+NS+TuA9 Fabrication and Domain Imaging of Iron Magnetic Nanowire Arrays D. A. Tulchinsky, M. H. Kelley, J. J. McClelland, R. Gupta, R. J. Celotta National Institute of Standards

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION Reversible Electric Control of Exchange Bias in a Multiferroic Field Effect Device S. M. Wu 1, 2, Shane A. Cybart 1, 2, P. Yu 1, 2, M. D. Abrodos 1, J. Zhang 1, R. Ramesh 1, 2

More information

During such a time interval, the MOS is said to be in "deep depletion" and the only charge present in the semiconductor is the depletion charge.

During such a time interval, the MOS is said to be in deep depletion and the only charge present in the semiconductor is the depletion charge. Q1 (a) If we apply a positive (negative) voltage step to a p-type (n-type) MOS capacitor, which is sufficient to generate an inversion layer at equilibrium, there is a time interval, after the step, when

More information

Transduction Based on Changes in the Energy Stored in an Electrical Field

Transduction Based on Changes in the Energy Stored in an Electrical Field Lecture 7-1 Transduction Based on Changes in the Energy Stored in an Electrical Field - Electrostriction The electrostrictive effect is a quadratic dependence of strain or stress on the polarization P

More information

Ferroelectricity and Antiferroelectricity in Elemental Group-V Monolayer Materials

Ferroelectricity and Antiferroelectricity in Elemental Group-V Monolayer Materials Ferroelectricity and Antiferroelectricity in Elemental Group-V Monolayer Materials Chengcheng Xiao 1, Fang Wang 1, Shengyuan A. Yang 2, Yunhao Lu 1 * 1 State Key Laboratory of Silicon Materials, School

More information

Charge fluctuators, their temperature and their response to sudden electrical fields

Charge fluctuators, their temperature and their response to sudden electrical fields Charge fluctuators, their temperature and their response to sudden electrical fields Outline Charge two-level fluctuators Measuing noise with an SET Temperature and bias dependence of the noise TLF temperature

More information

Semiconductor Nanowires: Motivation

Semiconductor Nanowires: Motivation Semiconductor Nanowires: Motivation Patterning into sub 50 nm range is difficult with optical lithography. Self-organized growth of nanowires enables 2D confinement of carriers with large splitting of

More information

Lecture 6. Alternative storage technologies. All optical recording. Racetrack memory. Topological kink solitons. Flash memory. Holographic memory

Lecture 6. Alternative storage technologies. All optical recording. Racetrack memory. Topological kink solitons. Flash memory. Holographic memory Lecture 6 Alternative storage technologies All optical recording Racetrack memory Topological kink solitons Flash memory Holographic memory Millipede Ferroelectric memory All-optical recording It is possible

More information

Domain switching and electromechanical properties of pulse poled Pb Zn 1Õ3 Nb 2Õ3 O 3 PbTiO 3 crystals

Domain switching and electromechanical properties of pulse poled Pb Zn 1Õ3 Nb 2Õ3 O 3 PbTiO 3 crystals JOURNAL OF APPLIED PHYSICS VOLUME 89, NUMBER 1 1 JANUARY 2001 Domain switching and electromechanical properties of pulse poled Pb Zn 1Õ3 Nb 2Õ3 O 3 PbTiO 3 crystals Hanxing Yu, Venkat Gopalan, Jürgen Sindel,

More information

Aberration-corrected TEM studies on interface of multilayered-perovskite systems

Aberration-corrected TEM studies on interface of multilayered-perovskite systems Aberration-corrected TEM studies on interface of multilayered-perovskite systems By Lina Gunawan (0326114) Supervisor: Dr. Gianluigi Botton November 1, 2006 MSE 702(1) Presentation Outline Literature Review

More information

Flexible Piezoelectric-Induced Pressure Sensors for Static. Measurements Based on Nanowires/Graphene Heterostructures

Flexible Piezoelectric-Induced Pressure Sensors for Static. Measurements Based on Nanowires/Graphene Heterostructures Flexible Piezoelectric-Induced Pressure Sensors for Static Measurements Based on Nanowires/Graphene Heterostructures Zefeng Chen,, Zhao Wang,, Xinming Li,*, Yuxuan Lin, Ningqi Luo, Mingzhu Long, Ni Zhao,

More information

Nanomaterials and their Optical Applications

Nanomaterials and their Optical Applications Nanomaterials and their Optical Applications Winter Semester 2013 Lecture 02 rachel.grange@uni-jena.de http://www.iap.uni-jena.de/multiphoton Lecture 2: outline 2 Introduction to Nanophotonics Theoretical

More information

Plan for Lectures #4, 5, & 6. Theme Of Lectures: Nano-Fabrication

Plan for Lectures #4, 5, & 6. Theme Of Lectures: Nano-Fabrication Plan for Lectures #4, 5, & 6 Theme Of Lectures: Nano-Fabrication Quantum Wells, SLs, Epitaxial Quantum Dots Carbon Nanotubes, Semiconductor Nanowires Self-assembly and Self-organization Two Approaches

More information

Nanoacoustics II Lecture #2 More on generation and pick-up of phonons

Nanoacoustics II Lecture #2 More on generation and pick-up of phonons Nanoacoustics II Lecture #2 More on generation and pick-up of phonons Dr. Ari Salmi www.helsinki.fi/yliopisto 26.3.2018 1 Last lecture key points Coherent acoustic phonons = sound at nanoscale Incoherent

More information

A Hydrothermally Deposited Epitaxial PbTiO 3 Thin Film on SrRuO 3 Bottom Electrode for the Ferroelectric Ultra-High Density Storage Medium

A Hydrothermally Deposited Epitaxial PbTiO 3 Thin Film on SrRuO 3 Bottom Electrode for the Ferroelectric Ultra-High Density Storage Medium Integrated Ferroelectrics, 64: 247 257, 2004 Copyright C Taylor & Francis Inc. ISSN: 1058-4587 print/ 1607-8489 online DOI: 10.1080/10584580490894645 A Hydrothermally Deposited Epitaxial PbTiO 3 Thin Film

More information

Colossal electroresistance in metal/ferroelectric/semiconductor. tunnel diodes for resistive switching memories

Colossal electroresistance in metal/ferroelectric/semiconductor. tunnel diodes for resistive switching memories Colossal electroresistance in metal/ferroelectric/semiconductor tunnel diodes for resistive switching memories Zheng Wen, Chen Li, Di Wu*, Aidong Li and Naiben Ming National Laboratory of Solid State Microstructures

More information

Left-handed materials: Transfer matrix method studies

Left-handed materials: Transfer matrix method studies Left-handed materials: Transfer matrix method studies Peter Markos and C. M. Soukoulis Outline of Talk What are Metamaterials? An Example: Left-handed Materials Results of the transfer matrix method Negative

More information

ESO 205 Nature and Properties of Materials

ESO 205 Nature and Properties of Materials Dielectric Materials Topics to discuss Principles of dielectrics Dielectrics Loss and Breakdown Polarizations Frequency dependence Ferro-, Piezo- and Pyro- electrics ESO 205 Nature and Properties of Materials

More information

Materials 218/UCSB: Phase transitions and polar materials

Materials 218/UCSB: Phase transitions and polar materials Materials 218/UCSB: Phase transitions and polar materials Ram Seshadri (seshadri@mrl.ucsb.edu) Background: Intrinsic stability of thermodynamic systems (after H. B. Callen, Thermodynamics and an introduction

More information

I. B. Misirlioglu*, M. Yildiz. Faculty of Engineering and Natural Sciences, Sabanci University, Tuzla/Orhanli, Istanbul, Turkey.

I. B. Misirlioglu*, M. Yildiz. Faculty of Engineering and Natural Sciences, Sabanci University, Tuzla/Orhanli, Istanbul, Turkey. Sandwich and Interdigitated Finger Electrode Ferroelectric Nano Film Capacitors: A Comparison of the Effect of Electrostatic Boundary Conditions and Defects I. B. Misirlioglu*, M. Yildiz Faculty of Engineering

More information

Physics and Material Science of Semiconductor Nanostructures

Physics and Material Science of Semiconductor Nanostructures Physics and Material Science of Semiconductor Nanostructures PHYS 570P Prof. Oana Malis Email: omalis@purdue.edu Course website: http://www.physics.purdue.edu/academic_programs/courses/phys570p/ Lecture

More information

Ferroelectric transition in compressively strained SrTiO 3 thin films

Ferroelectric transition in compressively strained SrTiO 3 thin films APPLIED PHYSICS LETTERS 107, 192908 (2015) Ferroelectric transition in compressively strained SrTiO 3 thin films Amit Verma, 1,2,a) Santosh Raghavan, 3 Susanne Stemmer, 3 and Debdeep Jena 1,2,4 1 Department

More information

Relaxor characteristics of ferroelectric BaZr 0.2 Ti 0.8 O 3 ceramics

Relaxor characteristics of ferroelectric BaZr 0.2 Ti 0.8 O 3 ceramics Materials Science-Poland, Vol. 27, No. 3, 2009 Relaxor characteristics of ferroelectric BaZr 0.2 Ti 0.8 O 3 ceramics C. FU 1, 2*, F. PAN 1, W. CAI 1, 2, X. DENG 2, X. LIU 2 1 School of Materials Science

More information