SUPPLEMENTARY INFORMATION

Size: px
Start display at page:

Download "SUPPLEMENTARY INFORMATION"

Transcription

1 SUPPLEMENTARY INFORMATION Reversible Electric Control of Exchange Bias in a Multiferroic Field Effect Device S. M. Wu 1, 2, Shane A. Cybart 1, 2, P. Yu 1, 2, M. D. Abrodos 1, J. Zhang 1, R. Ramesh 1, 2 & R.C. Dynes 1, 2, 3 1 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA USA 2 Department of Physics, University of California, Berkeley, CA USA 3 Department of Physics, University of California, San Diego, La Jolla, CA USA Figure S1 Structural and chemical characterization of BFO/LSMO heterostructures a, Scanning transmission electron microscopy (STEM) measurements on the interface between LSMO and BFO showing that the interface is smooth at the atomic level. b, Electron energy loss spectroscopy (EELS) measurements of the BFO/LSMO interface, showing little interfacial interdiffusion. nature materials 1

2 supplementary information Figure S2 Ferroelectric domain characterization. a, Out-of-plane piezoresponse force microscopy (PFM) images showing a square central region that has been polarized down. b, Inplane PFM of the same region showing a striped domain structure in both the as-grown up polarization state, and the poled down polarization state. Detailed analyses of the in-plane and out-of-plane PFM images obtained from several locations of the sample, clearly show that the domain structure is comprised of almost exclusively of 71 domains, consistent with previous studies 1. Furthermore, conducting AFM measurements of these same regions show no indication of domain wall conduction, which is again consistent with the previously published reports of conduction in 109 and 180 domain walls and no measurable conduction in 71 walls 2. 2 nature MATERIALS

3 supplementary information Figure S3 Analysis of temperature dependent R S data. The data from Fig. 4a are reproduced here along with curves generated by adding only a vertical translation (light blue), only a multiplicative factor (pink), and both a vertical translation and a multiplicative factor (green). It is seen here that neither a vertical translation nor a multiplicative factor alone can completely explain this effect, and that both a small amount of doping and change in temperature independent scattering is likely occurring in this sample. The tail of R S (+45V) does not fit any of the curves, regardless, due to 2D electron localization effects at low temperature that cause the tail of the R S -T curve to diverge faster at low temperatures as the resistance of the sample is increased. nature materials 3

4 supplementary information Figure S4 Hysteresis measurements for resistance and electric polarization. An alternate method of obtaining sheet resistance vs. gate voltage is presented in the red curve. This curve differs from the curve presented in Fig. 3c because the gate voltage was left on the sample and the resistance was measured continuously over a 100 sec sweep. Heating effects through gate leakage are minimal as demonstrated by the fact that the curve closes on itself and does not display any symmetric increases in resistance at the higher gate voltages. The corresponding electric polarization hysteresis curve was obtained using the Sawyer-Tower method, which shows a full electric polarization of BFO. 4 nature MATERIALS

5 supplementary information Figure S5 Heterointerfacial ferromagnetic moment in BFO. In the study presented in the main article, the LSMO/BFO heterostructures are grown on STO (001) substrates. On the [001] surface, the G-type antiferromagnetic BFO is magnetically compensated. This means that we cannot directly explain the exchange bias effect (Fig. 2b), within the classical exchange bias model 3, and thus motivates the study of the magnetic spin structure of BFO at the heterointerface 4. One of the most effective techniques to accomplish this is through x-ray magnetic circular dichroism (XMCD) measurements in the total electron yield mode. In the XMCD measurement, the transition metals (Fe and Mn) L edges ((2p 3d dipole transitions) are probed with circular polarized x-rays. The difference between the two spectra (left/right circular polarized x-rays) provides direct information on both the magnetic spin orientation and the amplitude of the magnetization after applying a so called spin sum rule 5. a and b show the XMCD spectra together with the integrated spectra for both Mn and Fe L-edges at 10 K. Clear XMCD spectra are observed for both cases. The dichroism of Mn is consistent with the previous measured values, while an unexpectedly large XMCD is observed for the Fe L-edge. This data strongly suggests that in the first few nanometers of the BFO film, at the interface, a new magnetic spin structure is present that is markedly different from that in the remainder of the BFO film. Additionally, the opposite signs for the Mn and Fe L-edges, suggest the coupling between the bulk Mn and interfacial Fe spins is antiparallel in nature. In summary, the spin nature materials 5

6 supplementary information structure of the heterostructure is determined to be as shown in c. An enhanced magnetism is observed in the BFO close to the interface and the induced spins are coupled antiparallel with the LSMO spins. 6 nature MATERIALS

7 supplementary information References 1 Zavaliche, F. et al. Multiferroic BiFeO3 films: domain structure and polarization dynamics. Phase Transitions 79, (2006). 2 Seidel, J. et al. Conduction at domain walls in oxide multiferroics. Nat Mater 8 (2009). 3 Nogues, J. & Schuller, I. K. Exchange bias. J Magn Magn Mater 192, (1999). 4 Yu, P. et al. Interface ferromagnetism and orbital reconstruction in BiFeO3- La0.7Sr0.3MnO3 heterostructures. In Press. Phys. Rev. Lett. arxiv: v1 (2010). 5 Chen, C. T. et al. Experimental confirmation of the X-ray magnetic circular dichroism sum rules for iron and cobalt. Phys Rev Lett 75, (1995). nature materials 7

Interface ferromagnetism and orbital reconstruction in BiFeO 3 -

Interface ferromagnetism and orbital reconstruction in BiFeO 3 - Interface ferromagnetism and orbital reconstruction in BiFeO 3 - La 0.7 Sr 0.3 MnO 3 heterostructures P. Yu 1, J. -S. Lee 2, S. Okamoto 3, M. D. Rossell 4, M. Huijben 1,5, C. -H. Yang 1, Q. He 1, J. -X.

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION Titanium d xy ferromagnetism at the LaAlO 3 /SrTiO 3 interface J.-S. Lee 1,*, Y. W. Xie 2, H. K. Sato 3, C. Bell 3, Y. Hikita 3, H. Y. Hwang 2,3, C.-C. Kao 1 1 Stanford Synchrotron Radiation Lightsource,

More information

Making the Invisible Visible: Probing Antiferromagnetic Order in Novel Materials

Making the Invisible Visible: Probing Antiferromagnetic Order in Novel Materials Making the Invisible Visible: Probing Antiferromagnetic Order in Novel Materials Elke Arenholz Lawrence Berkeley National Laboratory Antiferromagnetic contrast in X-ray absorption Ni in NiO Neel Temperature

More information

A Nanoscale Shape Memory Oxide

A Nanoscale Shape Memory Oxide A Nanoscale Shape Memory Oxide Jinxing Zhang 1,2*, Xiaoxing Ke 3*, Gaoyang Gou 4, Jan Seidel 2,5, Bin Xiang 6,9, Pu Yu 2,7, Wen-I Liang 8, Andrew M. Minor 9,10, Ying-hao Chu 8, Gustaaf Van Tendeloo 3,

More information

What so special about LaAlO3/SrTiO3 interface? Magnetism, Superconductivity and their coexistence at the interface

What so special about LaAlO3/SrTiO3 interface? Magnetism, Superconductivity and their coexistence at the interface What so special about LaAlO3/SrTiO3 interface? Magnetism, Superconductivity and their coexistence at the interface Pramod Verma Indian Institute of Science, Bangalore 560012 July 24, 2014 Pramod Verma

More information

Holcomb Group Capabilities

Holcomb Group Capabilities Holcomb Group Capabilities Synchrotron Radiation & Ultrafast Optics West Virginia University mikel.holcomb@mail.wvu.edu The Physicists New Playground The interface is the device. - Herbert Kroemer, beginning

More information

(a) (b) Supplementary Figure 1. (a) (b) (a) Supplementary Figure 2. (a) (b) (c) (d) (e)

(a) (b) Supplementary Figure 1. (a) (b) (a) Supplementary Figure 2. (a) (b) (c) (d) (e) (a) (b) Supplementary Figure 1. (a) An AFM image of the device after the formation of the contact electrodes and the top gate dielectric Al 2 O 3. (b) A line scan performed along the white dashed line

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION In the format provided by the authors and unedited. DOI: 10.1038/NMAT4951 Phase coexistence and electric-field control of toroidal order in oxide superlattices A. R. Damodaran 1,2 *, J. D. Clarkson 1,2

More information

J 12 J 23 J 34. Driving forces in the nano-magnetism world. Intra-atomic exchange, electron correlation effects: Inter-atomic exchange: MAGNETIC ORDER

J 12 J 23 J 34. Driving forces in the nano-magnetism world. Intra-atomic exchange, electron correlation effects: Inter-atomic exchange: MAGNETIC ORDER Driving forces in the nano-magnetism world Intra-atomic exchange, electron correlation effects: LOCAL (ATOMIC) MAGNETIC MOMENTS m d or f electrons Inter-atomic exchange: MAGNETIC ORDER H exc J S S i j

More information

Supplementary Figure 1 Representative sample of DW spin textures in a

Supplementary Figure 1 Representative sample of DW spin textures in a Supplementary Figure 1 Representative sample of DW spin textures in a Fe/Ni/W(110) film. (a) to (d) Compound SPLEEM images of the Fe/Ni/W(110) sample. As in Fig. 2 in the main text, Fe thickness is 1.5

More information

Supplementary Information for. Non-volatile memory based on ferroelectric photovoltaic effect

Supplementary Information for. Non-volatile memory based on ferroelectric photovoltaic effect Supplementary Information for Non-volatile memory based on ferroelectric photovoltaic effect Rui Guo 1, Lu You 1, Yang Zhou 1, Zhi Shiuh Lim 1, Xi Zou 1, Lang Chen 1, R. Ramesh 2, Junling Wang 1* 1 School

More information

Electric field control of magnetization using AFM/FM interfaces. Xiaoshan Xu

Electric field control of magnetization using AFM/FM interfaces. Xiaoshan Xu Electric field control of magnetization using AFM/FM interfaces Xiaoshan Xu Magnetoelectric effects α = μ 0 M E H M H = 0, E = 0 = 0 (General magnetoelectrics) M H = 0, E = 0 0, P H = 0, E = 0 0, (Multiferroics)

More information

X-Ray Spectro-Microscopy Joachim Stöhr Stanford Synchrotron Radiation Laboratory

X-Ray Spectro-Microscopy Joachim Stöhr Stanford Synchrotron Radiation Laboratory X-Ray Spectro-Microscopy Joachim Stöhr Stanford Synchrotron Radiation Laboratory X-Rays have come a long way Application to Magnetic Systems 1 µm 1895 1993 2003 http://www-ssrl.slac.stanford.edu/stohr/index.htm

More information

X-ray Imaging and Spectroscopy of Individual Nanoparticles

X-ray Imaging and Spectroscopy of Individual Nanoparticles X-ray Imaging and Spectroscopy of Individual Nanoparticles A. Fraile Rodríguez, F. Nolting Swiss Light Source Paul Scherrer Institut, Switzerland Intensity [a.u.] 1.4 1.3 1.2 1.1 D 8 nm 1 1 2 3 1.0 770

More information

Artificially layered structures

Artificially layered structures http://accessscience.com/popup.ap x?id=053450&name=print Close Window ENCYCLOPEDIA ARTICLE Artificially layered structures Manufactured, reproducibly layered structures having layer thicknesses approaching

More information

Supplementary Figures:

Supplementary Figures: Supplementary Figures: Supplementary Figure 1 Cross-sectional morphology and Chemical composition. (a) A low-magnification dark-field TEM image shows the cross-sectional morphology of the BWO thin film

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION Dirac electron states formed at the heterointerface between a topological insulator and a conventional semiconductor 1. Surface morphology of InP substrate and the device Figure S1(a) shows a 10-μm-square

More information

Department of Electrical Engineering and Information Systems, Tanaka-Ohya lab.

Department of Electrical Engineering and Information Systems, Tanaka-Ohya lab. Observation of the room-temperature local ferromagnetism and its nanoscale expansion in the ferromagnetic semiconductor Ge 1 xfe x Yuki K. Wakabayashi 1 and Yukio Takahashi 2 1 Department of Electrical

More information

I 1. YIG CoO Pt. φ=0 o φ=90 o I 3. XAS (a.u.) E φ. X-ray Photon energy (ev) T=78 K T=230 K ΔR L

I 1. YIG CoO Pt. φ=0 o φ=90 o I 3. XAS (a.u.) E φ. X-ray Photon energy (ev) T=78 K T=230 K ΔR L a YIG CoO Pt φ= o φ=9 o I 1 I 3 H X-ray E φ XAS (a.u.) 778 779 11 112 111 775 78 785 Photon energy (ev) c.1 T=78 K T=23 K d.2 R L3 ΔR L3.1 ΔR L3 -.1 3 6 φ (deg.) 9 1 2 3 T (K) Supplementary Figure 1: a.

More information

Neutron and x-ray spectroscopy

Neutron and x-ray spectroscopy Neutron and x-ray spectroscopy B. Keimer Max-Planck-Institute for Solid State Research outline 1. self-contained introduction neutron scattering and spectroscopy x-ray scattering and spectroscopy 2. application

More information

Micron 43 (2012) Contents lists available at SciVerse ScienceDirect. Micron. j our na l ho me p age:

Micron 43 (2012) Contents lists available at SciVerse ScienceDirect. Micron. j our na l ho me p age: Micron 43 (2012) 1121 1126 Contents lists available at SciVerse ScienceDirect Micron j our na l ho me p age: www.elsevier.com/locate/micron Direct observation of ferroelectric domain switching in varying

More information

Nanoscale Control of Exchange Bias with BiFeO 3 Thin Films

Nanoscale Control of Exchange Bias with BiFeO 3 Thin Films Nanoscale Control of Exchange Bias with BiFeO 3 Thin Films NANO LETTERS 2008 Vol. 8, No. 7 2050-2055 Lane W. Martin,*,, Ying-Hao Chu,,, Mikel B. Holcomb,, Mark Huijben, Pu Yu, Shu-Jen Han, Donkoun Lee,

More information

Stripes developed at the strong limit of nematicity in FeSe film

Stripes developed at the strong limit of nematicity in FeSe film Stripes developed at the strong limit of nematicity in FeSe film Wei Li ( ) Department of Physics, Tsinghua University IASTU Seminar, Sep. 19, 2017 Acknowledgements Tsinghua University Prof. Qi-Kun Xue,

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION Supplementary Information Anisotropic conductance at improper ferroelectric domain walls D. Meier 1,, *, J. Seidel 1,3, *, A. Cano 4, K. Delaney 5, Y. Kumagai 6, M. Mostovoy 7, N. A. Spaldin 6, R. Ramesh

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION In the format provided by the authors and unedited. DOI:.38/NMAT4855 A magnetic heterostructure of topological insulators as a candidate for axion insulator M. Mogi, M. Kawamura, R. Yoshimi, A. Tsukazaki,

More information

10. Magnetoelectric Switching

10. Magnetoelectric Switching Beyond CMOS computing 10. Magnetoelectric Switching Dmitri Nikonov Dmitri.e.nikonov@intel.com 1 Outline Magnetoelectric effect to improve spintronic switching Review of experiments on magnetoelectric switching:

More information

Angular dependence of the magnetization reversal in exchange biased Fe/MnF 2. Elke Arenholz

Angular dependence of the magnetization reversal in exchange biased Fe/MnF 2. Elke Arenholz Angular dependence of the magnetization reversal in exchange biased Fe/MnF 2 Elke Arenholz Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 Kai Liu Department of Physics,

More information

Soft X-ray Physics DELNOR-WIGGINS PASS STATE PARK

Soft X-ray Physics DELNOR-WIGGINS PASS STATE PARK Soft X-ray Physics Overview of research in Prof. Tonner s group Introduction to synchrotron radiation physics Photoemission spectroscopy: band-mapping and photoelectron diffraction Magnetic spectroscopy

More information

Recent Developments in Magnetoelectrics Vaijayanti Palkar

Recent Developments in Magnetoelectrics Vaijayanti Palkar Recent Developments in Magnetoelectrics Vaijayanti Palkar Department of Condensed Matter Physics & Materials Science Tata Institute of Fundamental Research Mumbai 400 005, India. Tata Institute of Fundamental

More information

Titanium d xy ferromagnetism at the LaAlO 3 /SrTiO 3 interface

Titanium d xy ferromagnetism at the LaAlO 3 /SrTiO 3 interface Titanium d xy ferromagnetism at the LaAlO 3 /SrTiO 3 interface SLAC-PUB-15439 J.-S. Lee 1,*, Y. W. Xie 2, H. K. Sato 3, C. Bell 3, Y. Hikita 3, H. Y. Hwang 2,3, C.-C. Kao 1 1 Stanford Synchrotron Radiation

More information

Chapter 2 Magnetic Properties

Chapter 2 Magnetic Properties Chapter 2 Magnetic Properties Abstract The magnetic properties of a material are the basis of their applications. Specifically, the contrast agents that will be developed in Chaps. 4 and 5 use their magnetic

More information

Nanoscale magnetic imaging with single spins in diamond

Nanoscale magnetic imaging with single spins in diamond Nanoscale magnetic imaging with single spins in diamond Ania Bleszynski Jayich UC Santa Barbara Physics AFOSR Nanoelectronics Review Oct 24, 2016 Single spin scanning magnetometer Variable temperature

More information

I. Vrejoiu, E. Pippel, E. Nikulina, and D. Hesse Max Planck Institute of Microstructure Physics, D Halle, Germany. (Dated: October 18, 2018)

I. Vrejoiu, E. Pippel, E. Nikulina, and D. Hesse Max Planck Institute of Microstructure Physics, D Halle, Germany. (Dated: October 18, 2018) Magnetic Properties of Pr 0.7 Ca 0.3 MnO 3 /SrRuO 3 Superlattices M. Ziese Division of Superconductivity and Magnetism, University of Leipzig, D-04103 Leipzig, Germany arxiv:1103.2299v1 [cond-mat.str-el]

More information

Mechanism of Polarization Fatigue in BiFeO 3 : the Role of Schottky Barrier

Mechanism of Polarization Fatigue in BiFeO 3 : the Role of Schottky Barrier Mechanism of Polarization Fatigue in BiFeO 3 : the Role of Schottky Barrier Yang Zhou, 1 Xi Zou, 1 Lu You, 1 Rui Guo, 1 Zhi Shiuh Lim, 1 Lang Chen, 1 Guoliang Yuan, 2,a) and Junling Wang 1,b) 1 School

More information

Magnetoresistance due to Domain Walls in Micron Scale Fe Wires. with Stripe Domains arxiv:cond-mat/ v1 [cond-mat.mes-hall] 9 Mar 1998.

Magnetoresistance due to Domain Walls in Micron Scale Fe Wires. with Stripe Domains arxiv:cond-mat/ v1 [cond-mat.mes-hall] 9 Mar 1998. Magnetoresistance due to Domain Walls in Micron Scale Fe Wires with Stripe Domains arxiv:cond-mat/9803101v1 [cond-mat.mes-hall] 9 Mar 1998 A. D. Kent a, U. Ruediger a, J. Yu a, S. Zhang a, P. M. Levy a

More information

Supplementary Figure 1 Routine ferroelectric characterizations of a 4-μm-thick CIPS flake. a,

Supplementary Figure 1 Routine ferroelectric characterizations of a 4-μm-thick CIPS flake. a, Supplementary Figure 1 Routine ferroelectric characterizations of a 4-μm-thick CIPS flake. a, Standard ferroelectric polarization-electric field (P-E) hysteresis loops of a 4-μm-thick CIPS flake at 100

More information

A constant potential of 0.4 V was maintained between electrodes 5 and 6 (the electrode

A constant potential of 0.4 V was maintained between electrodes 5 and 6 (the electrode (a) (b) Supplementary Figure 1 The effect of changing po 2 on the field-enhanced conductance A constant potential of 0.4 V was maintained between electrodes 5 and 6 (the electrode configuration is shown

More information

Curvature-enhanced Spin-orbit Coupling and Spinterface Effect in Fullerene-based Spin Valves

Curvature-enhanced Spin-orbit Coupling and Spinterface Effect in Fullerene-based Spin Valves Supplementary Information Curvature-enhanced Spin-orbit Coupling and Spinterface Effect in Fullerene-based Spin Valves Shiheng Liang 1, Rugang Geng 1, Baishun Yang 2, Wenbo Zhao 3, Ram Chandra Subedi 1,

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION Magnetization switching through giant spin-orbit torque in a magnetically doped topological insulator heterostructure Yabin Fan, 1,,* Pramey Upadhyaya, 1, Xufeng Kou, 1, Murong Lang, 1 So Takei, 2 Zhenxing

More information

Combined neutron and synchrotron studies of magnetic films

Combined neutron and synchrotron studies of magnetic films PRAMANA c Indian Academy of Sciences Vol. 67, No. 1 journal of July 2006 physics pp. 47 55 Combined neutron and synchrotron studies of magnetic films SUNIL K SINHA 1,2, S ROY 1, M R FITZSIMMONS 2, S PARK

More information

Influence of ferromagnetic antiferromagnetic coupling on the antiferromagnetic ordering temperature in Ni/Fe x Mn 1 x bilayers

Influence of ferromagnetic antiferromagnetic coupling on the antiferromagnetic ordering temperature in Ni/Fe x Mn 1 x bilayers Influence of ferromagnetic antiferromagnetic coupling on the antiferromagnetic ordering temperature in Ni/Fe x Mn 1 x bilayers M. Stampe, P. Stoll, T. Homberg, K. Lenz, and W. Kuch Institut für Experimentalphysik,

More information

Active control of magnetoresistance of organic spin valves using. ferroelectricity

Active control of magnetoresistance of organic spin valves using. ferroelectricity Active control of magnetoresistance of organic spin valves using ferroelectricity Dali Sun 2,3,, ǀǀ, Mei Fang 1,, Xiaoshan Xu 2, *,, Lu Jiang 2,3, Hangwen Guo 2,3, Yanmei Wang 1, Wenting Yang 1, Lifeng

More information

Field dependent magnetization of BiFeO 3 in ultrathin La 0.7 Sr 0.3 MnO 3 /BiFeO 3 superlattice

Field dependent magnetization of BiFeO 3 in ultrathin La 0.7 Sr 0.3 MnO 3 /BiFeO 3 superlattice Field dependent magnetization of BiFeO 3 in ultrathin La.7 Sr.3 MnO 3 /BiFeO 3 superlattice Surendra Singh, 1 J. Xiong, 2 A. P. Chen, 2 M R Fitzsimmons, 3 Q. X. Jia 2 1 Solid State Physics Division, Bhabha

More information

Supplementary Figure 1. Magnetic domain configuration under out-of-plane field application. (a), (b) MTXM images showing magnetic domain state

Supplementary Figure 1. Magnetic domain configuration under out-of-plane field application. (a), (b) MTXM images showing magnetic domain state Supplementary Figure 1. Magnetic domain configuration under out-of-plane field application. (a), (b) MTXM images showing magnetic domain state acquired at a given out-ofplane magnetic field. Bright and

More information

Lecture 6. Alternative storage technologies. All optical recording. Racetrack memory. Topological kink solitons. Flash memory. Holographic memory

Lecture 6. Alternative storage technologies. All optical recording. Racetrack memory. Topological kink solitons. Flash memory. Holographic memory Lecture 6 Alternative storage technologies All optical recording Racetrack memory Topological kink solitons Flash memory Holographic memory Millipede Ferroelectric memory All-optical recording It is possible

More information

X-Ray Magnetic Dichroism. S. Turchini ISM-CNR

X-Ray Magnetic Dichroism. S. Turchini ISM-CNR X-Ray Magnetic Dichroism S. Turchini SM-CNR stefano.turchini@ism.cnr.it stefano.turchini@elettra.trieste.it Magnetism spin magnetic moment direct exchange: ferro antiferro superexchange 3d Ligand 2p 3d

More information

Positive and negative exchange bias effects in the simple perovskite manganite NdMnO3

Positive and negative exchange bias effects in the simple perovskite manganite NdMnO3 University of Wollongong Research Online Australian Institute for Innovative Materials - Papers Australian Institute for Innovative Materials 2012 Positive and negative exchange bias effects in the simple

More information

Electric-field control of magnetic domain wall motion and local magnetization reversal

Electric-field control of magnetic domain wall motion and local magnetization reversal Electric-field control of magnetic domain wall motion and local magnetization reversal Tuomas H. E. Lahtinen, Kévin J. A. Franke and Sebastiaan van Dijken* NanoSpin, Department of Applied Physics, Aalto

More information

Supplementary Figure 1

Supplementary Figure 1 Supplementary Figure 1 0.4 0.2 a 0.0 Averaged di/dv-asymmetry -0.2-0.4 0.04 0.02 0.00-0.02-0.04-0.06-0.2 b Co core 0.0 0.2 0.4 di/dv asymmetry Spin polarization 0.4 0.2 0.0-0.2-0.4-0.6 Spin polarization

More information

Observation of ferroelectric domains in bismuth ferrite using coherent diffraction techniques

Observation of ferroelectric domains in bismuth ferrite using coherent diffraction techniques Observation of ferroelectric domains in bismuth ferrite using coherent diffraction techniques James Vale October 25, 2011 Abstract Multiferroic materials have significant potential for both the scientific

More information

SUPPLEMENTARY MATERIAL

SUPPLEMENTARY MATERIAL SUPPLEMENTARY MATERIAL Multiphase Nanodomains in a Strained BaTiO3 Film on a GdScO3 Substrate Shunsuke Kobayashi 1*, Kazutoshi Inoue 2, Takeharu Kato 1, Yuichi Ikuhara 1,2,3 and Takahisa Yamamoto 1, 4

More information

Newcastle University eprints

Newcastle University eprints Newcastle University eprints Ponon NK, Appleby DJR, Arac E, Kwa KSK, Goss JP, Hannemann U, Petrov PK, Alford NM, O'Neill A. Impact of Crystalline Orientation on the Switching Field in Barium Titanate Using

More information

Universal valence-band picture of. the ferromagnetic semiconductor GaMnAs

Universal valence-band picture of. the ferromagnetic semiconductor GaMnAs Universal valence-band picture of the ferromagnetic semiconductor GaMnAs Shinobu Ohya *, Kenta Takata, and Masaaki Tanaka Department of Electrical Engineering and Information Systems, The University of

More information

Title of file for HTML: Supplementary Information Description: Supplementary Figures and Supplementary References

Title of file for HTML: Supplementary Information Description: Supplementary Figures and Supplementary References Title of file for HTML: Supplementary Information Description: Supplementary Figures and Supplementary References Supplementary Figure 1. SEM images of perovskite single-crystal patterned thin film with

More information

Electrostatic charging and redox effects in oxide heterostructures

Electrostatic charging and redox effects in oxide heterostructures Electrostatic charging and redox effects in oxide heterostructures Peter Littlewood 1,2,3 Nick Bristowe 3 & Emilio Artacho 3,6 Miguel Pruneda 4 and Massimiliano Stengel 5 1 Argonne National Laboratory

More information

F erroelectric materials are promising candidates for ferroelectric random access memories (FeRAMs) using

F erroelectric materials are promising candidates for ferroelectric random access memories (FeRAMs) using OPEN SUBJECT AREAS: INFORMATION STORAGE APPLIED PHYSICS Received 25 July 2014 Accepted 21 October 2014 Published 10 November 2014 Correspondence and requests for materials should be addressed to K.-J.J.

More information

Ferroelectric order in individual nanometrescale crystals

Ferroelectric order in individual nanometrescale crystals Ferroelectric order in individual nanometrescale crystals Mark J. Polking 1, Myung-Geun Han 2, Amin Yourdkhani 3,4, Valeri Petkov 5, Christian F. Kisielowski 6, Vyacheslav V. Volkov 2, Yimei Zhu 2, Gabriel

More information

Colossal electroresistance in metal/ferroelectric/semiconductor. tunnel diodes for resistive switching memories

Colossal electroresistance in metal/ferroelectric/semiconductor. tunnel diodes for resistive switching memories Colossal electroresistance in metal/ferroelectric/semiconductor tunnel diodes for resistive switching memories Zheng Wen, Chen Li, Di Wu*, Aidong Li and Naiben Ming National Laboratory of Solid State Microstructures

More information

Magnetism of TbPc 2 SMMs on ferromagnetic electrodes used in organic spintronics

Magnetism of TbPc 2 SMMs on ferromagnetic electrodes used in organic spintronics Electronic supplementary information Magnetism of TbPc 2 SMMs on ferromagnetic electrodes used in organic spintronics L. Malavolti, a L. Poggini, a L. Margheriti, a D. Chiappe, b P. Graziosi, c B. Cortigiani,

More information

Spin-resolved photoelectron spectroscopy

Spin-resolved photoelectron spectroscopy Spin-resolved photoelectron spectroscopy Application Notes Spin-resolved photoelectron spectroscopy experiments were performed in an experimental station consisting of an analysis and a preparation chamber.

More information

Local Anodic Oxidation with AFM: A Nanometer-Scale Spectroscopic Study with Photoemission Microscopy

Local Anodic Oxidation with AFM: A Nanometer-Scale Spectroscopic Study with Photoemission Microscopy Local Anodic Oxidation with AFM: A Nanometer-Scale Spectroscopic Study with Photoemission Microscopy S. Heun, G. Mori, M. Lazzarino, D. Ercolani,* G. Biasiol, and L. Sorba* Laboratorio Nazionale TASC-INFM,

More information

Contents. Acknowledgments

Contents. Acknowledgments MAGNETIC MATERIALS Fundamentals and Applications Second edition NICOLA A. SPALDIN University of California, Santa Barbara CAMBRIDGE UNIVERSITY PRESS Contents Acknowledgments page xiii I Basics 1 Review

More information

Supplementary Information for. Effect of Ag nanoparticle concentration on the electrical and

Supplementary Information for. Effect of Ag nanoparticle concentration on the electrical and Supplementary Information for Effect of Ag nanoparticle concentration on the electrical and ferroelectric properties of Ag/P(VDF-TrFE) composite films Haemin Paik 1,2, Yoon-Young Choi 3, Seungbum Hong

More information

Supplementary Figures

Supplementary Figures Supplementary Figures Supplementary Figure 1: Region mapping. a Pristine and b Mn-doped Bi 2 Te 3. Arrows point at characteristic defects present on the pristine surface which have been used as markers

More information

Influence of ferromagnetic-antiferromagnetic coupling on the antiferromagnetic ordering temperature in NiÕFe x Mn 1 x bilayers

Influence of ferromagnetic-antiferromagnetic coupling on the antiferromagnetic ordering temperature in NiÕFe x Mn 1 x bilayers PHYSICAL REVIEW B 81, 1442 21 Influence of ferromagnetic-antiferromagnetic coupling on the antiferromagnetic ordering temperature in NiÕFe x Mn 1 x bilayers M. Stampe,* P. Stoll, T. Homberg, K. Lenz, and

More information

Supporting Information for. Revealing Surface Elemental Composition and Dynamic Processes

Supporting Information for. Revealing Surface Elemental Composition and Dynamic Processes Supporting Information for Revealing Surface Elemental Composition and Dynamic Processes Involved in Facet-dependent Oxidation of Pt 3 Co Nanoparticles via in-situ Transmission Electron Microscopy Sheng

More information

Advanced Lab Course. Tunneling Magneto Resistance

Advanced Lab Course. Tunneling Magneto Resistance Advanced Lab Course Tunneling Magneto Resistance M06 As of: 015-04-01 Aim: Measurement of tunneling magnetoresistance for different sample sizes and recording the TMR in dependency on the voltage. Content

More information

Hidden Interfaces and High-Temperature Magnetism in Intrinsic Topological Insulator - Ferromagnetic Insulator Heterostructures

Hidden Interfaces and High-Temperature Magnetism in Intrinsic Topological Insulator - Ferromagnetic Insulator Heterostructures Hidden Interfaces and High-Temperature Magnetism in Intrinsic Topological Insulator - Ferromagnetic Insulator Heterostructures Valeria Lauter Quantum Condensed Matter Division, Oak Ridge National Laboratory,

More information

FIG. 1: (Supplementary Figure 1: Large-field Hall data) (a) AHE (blue) and longitudinal

FIG. 1: (Supplementary Figure 1: Large-field Hall data) (a) AHE (blue) and longitudinal FIG. 1: (Supplementary Figure 1: Large-field Hall data) (a) AHE (blue) and longitudinal MR (red) of device A at T =2 K and V G - V G 0 = 100 V. Bold blue line is linear fit to large field Hall data (larger

More information

Fabrication and Characteristic Investigation of Multifunctional Oxide p-n Heterojunctions

Fabrication and Characteristic Investigation of Multifunctional Oxide p-n Heterojunctions Advances in Science and Technology Vol. 45 (2006) pp. 2582-2587 online at http://www.scientific.net (2006) Trans Tech Publications, Switzerland Fabrication and Characteristic Investigation of Multifunctional

More information

Studies of nanomagnetism using synchrotron-based x-ray photoemission electron microscopy

Studies of nanomagnetism using synchrotron-based x-ray photoemission electron microscopy Studies of nanomagnetism using synchrotron-based x-ray photoemission electron microscopy X M Cheng 1 and D J Keavney 2* 1 Department of Physics, Bryn Mawr College, Bryn Mawr, PA USA 2 Argonne National

More information

Chapter 103 Spin-Polarized Scanning Tunneling Microscopy

Chapter 103 Spin-Polarized Scanning Tunneling Microscopy Chapter 103 Spin-Polarized Scanning Tunneling Microscopy Toyo Kazu Yamada Keywords Spin-polarized tunneling current Spin polarization Magnetism 103.1 Principle Spin-polarized scanning tunneling microscopy

More information

Magnetic Circular Dichroism spectroscopy in epitaxial La 0.7 Sr 0.3 MnO 3 thin films

Magnetic Circular Dichroism spectroscopy in epitaxial La 0.7 Sr 0.3 MnO 3 thin films Magnetic Circular Dichroism spectroscopy in epitaxial La 0.7 Sr 0.3 MnO 3 thin films T. K. Nath 1 and J. R. Neal 2, G. A. Gehring 2 1 Dept. of Physics and Meteorology, Indian Institute Technology of Kharagpur,

More information

Ultrathin Limit of Exchange Bias Coupling at Oxide Multiferroic/Ferromagnetic Interfaces

Ultrathin Limit of Exchange Bias Coupling at Oxide Multiferroic/Ferromagnetic Interfaces Ultrathin Limit of Exchange Bias Coupling at Oxide Multiferroic/Ferromagnetic Interfaces M. Huijben, * P. Yu, L. W. Martin, H. J. A. Molegraaf, Y.-H. Chu, M. B. Holcomb, N. Balke, G. Rijnders, and R. Ramesh

More information

8 Summary and outlook

8 Summary and outlook 91 8 Summary and outlook The main task of present work was to investigate the growth, the atomic and the electronic structures of Co oxide as well as Mn oxide films on Ag(001) by means of STM/STS at LT

More information

Magnon-drag thermopile

Magnon-drag thermopile Magnon-drag thermopile I. DEVICE FABRICATION AND CHARACTERIZATION Our devices consist of a large number of pairs of permalloy (NiFe) wires (30 nm wide, 20 nm thick and 5 µm long) connected in a zigzag

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide Supporting online material Konstantin V. Emtsev 1, Aaron Bostwick 2, Karsten Horn

More information

Title: Magnetic chains of metal formed by assembly of small nanoparticles

Title: Magnetic chains of metal formed by assembly of small nanoparticles Title: Magnetic chains of metal formed by assembly of small nanoparticles Authors: Chen-Min Liu, Lin Guo*, Rong-Ming Wang*, Yuan Deng, Hui-Bin Xu, Shihe Yang* Supporting Information S1. Sample characterization

More information

a) b) c) nm d) e)

a) b) c) nm d) e) Z[nm] Role of domain walls in the abnormal photovoltaic effect in BiFeO3 Akash Bhatnagar, Ayan Roy Chaudhuri, Young Heon Kim, Dietrich Hesse, and Marin Alexe a) 6.46 nm b) c) 8nm. nm 8 d) e) 7 6 5 4 3.5.5.5

More information

QS School Summary

QS School Summary 2018 NSF/DOE/AFOSR Quantum Science Summer School June 22, 2018 QS 3 2018 School Summary Kyle Shen (Cornell) Some Thank yous! A Big Thanks to Caroline Brockner!!! Also to our fantastic speakers! Kavli Institute

More information

Tailoring exchange couplings in magnetic topological-insulator/antiferromagnet heterostructures

Tailoring exchange couplings in magnetic topological-insulator/antiferromagnet heterostructures Tailoring exchange couplings in magnetic topological-insulator/antiferromagnet heterostructures Qing Lin He 1 *, Xufeng Kou 1, Alexander J. Grutter 2, Gen Yin 1, Lei Pan 1, Xiaoyu Che 1, Yuxiang Liu 1,

More information

Planar Hall Effect in Magnetite (100) Films

Planar Hall Effect in Magnetite (100) Films Planar Hall Effect in Magnetite (100) Films Xuesong Jin, Rafael Ramos*, Y. Zhou, C. McEvoy and I.V. Shvets SFI Nanoscience Laboratories, School of Physics, Trinity College Dublin, Dublin 2, Ireland 1 Abstract.

More information

Spectro-microscopic photoemission evidence of surface dissociation and charge uncompensated areas in Pb(Zr,Ti)O 3 (001) layers

Spectro-microscopic photoemission evidence of surface dissociation and charge uncompensated areas in Pb(Zr,Ti)O 3 (001) layers Electronic Supplementary Material (ESI) for Physical Chemistry Chemical Physics. This journal is the Owner Societies 2014 Electronic Supplementary Information - Phys. Chem. Chem. Phys. Spectro-microscopic

More information

arxiv:cond-mat/ v1 7 Aug 1996

arxiv:cond-mat/ v1 7 Aug 1996 EXCHANGE COUPLING AND MAGNETIZATION PROFILES OF BINARY AND TERNARY MAGNETIC MULTILAYERS F. Süss, U. Krey 1 Institut für Physik II der Universität, D-93040 Regensburg, Germany arxiv:cond-mat/9608037v1 7

More information

CHAPTER 2 MAGNETISM. 2.1 Magnetic materials

CHAPTER 2 MAGNETISM. 2.1 Magnetic materials CHAPTER 2 MAGNETISM Magnetism plays a crucial role in the development of memories for mass storage, and in sensors to name a few. Spintronics is an integration of the magnetic material with semiconductor

More information

S emiconductor heterostructures have brought about prominent advances in a variety of mainstream electronics

S emiconductor heterostructures have brought about prominent advances in a variety of mainstream electronics OPEN SUBJECT AREAS: SURFACES, INTERFACES AND THIN FILMS ELECTRONIC PROPERTIES AND MATERIALS SPINTRONICS MAGNETIC PROPERTIES AND MATERIALS Tuning the entanglement between orbital reconstruction and charge

More information

Ferroelectric Characterization of La BiFeO3/ Bi0.5(Na0.85K0.15)0.5TiO3 Nano-composite Films

Ferroelectric Characterization of La BiFeO3/ Bi0.5(Na0.85K0.15)0.5TiO3 Nano-composite Films University of Wollongong Research Online Australian Institute for Innovative Materials - Papers Australian Institute for Innovative Materials 2016 Ferroelectric Characterization of La BiFeO3/ Bi0.5(Na0.85K0.15)0.5TiO3

More information

File name: Supplementary Information Description: Supplementary Figures, Supplementary Notes, Supplementary Tables, Supplementary References

File name: Supplementary Information Description: Supplementary Figures, Supplementary Notes, Supplementary Tables, Supplementary References File name: Supplementary Information Description: Supplementary Figures, Supplementary Notes, Supplementary Tables, Supplementary References Supplementary Figure 1 Illustration of the reaction chamber

More information

Electrical Characterization with SPM Application Modules

Electrical Characterization with SPM Application Modules Electrical Characterization with SPM Application Modules Metrology, Characterization, Failure Analysis: Data Storage Magnetoresistive (MR) read-write heads Semiconductor Transistors Interconnect Ferroelectric

More information

Characterization of partially reduced graphene oxide as room

Characterization of partially reduced graphene oxide as room Supporting Information Characterization of partially reduced graphene oxide as room temperature sensor for H 2 Le-Sheng Zhang a, Wei D. Wang b, Xian-Qing Liang c, Wang-Sheng Chu d, Wei-Guo Song a *, Wei

More information

Scanning capacitance spectroscopy of an Al x Ga 1Àx NÕGaN heterostructure field-effect transistor structure: Analysis of probe tip effects

Scanning capacitance spectroscopy of an Al x Ga 1Àx NÕGaN heterostructure field-effect transistor structure: Analysis of probe tip effects Scanning capacitance spectroscopy of an Al x Ga 1Àx NÕGaN heterostructure field-effect transistor structure: Analysis of probe tip effects D. M. Schaadt and E. T. Yu a) Department of Electrical and Computer

More information

J. López-Sánchez*,, A. Serrano,Ø, A. Del Campo Ø, M. Abuín,, O. Rodríguez de la Fuente,, N. Carmona, Macroscopic aspect of the samples

J. López-Sánchez*,, A. Serrano,Ø, A. Del Campo Ø, M. Abuín,, O. Rodríguez de la Fuente,, N. Carmona, Macroscopic aspect of the samples J. López-Sánchez*,, A. Serrano,Ø, A. Del Campo Ø, M. Abuín,, O. Rodríguez de la Fuente,, N. Carmona, Departamento de Física de Materiales, Universidad Complutense de Madrid, 28040 Madrid Unidad Asociada

More information

Ferromagnetism and Anomalous Hall Effect in Graphene

Ferromagnetism and Anomalous Hall Effect in Graphene Ferromagnetism and Anomalous Hall Effect in Graphene Jing Shi Department of Physics & Astronomy, University of California, Riverside Graphene/YIG Introduction Outline Proximity induced ferromagnetism Quantized

More information

Enhancement of spin relaxation time in hydrogenated graphene spin-valve devices Wojtaszek, M.; Vera-Marun, I. J.; Maassen, T.

Enhancement of spin relaxation time in hydrogenated graphene spin-valve devices Wojtaszek, M.; Vera-Marun, I. J.; Maassen, T. University of Groningen Enhancement of spin relaxation time in hydrogenated graphene spin-valve devices Wojtaszek, M.; Vera-Marun, I. J.; Maassen, T.; van Wees, Bart Published in: Physical Review. B: Condensed

More information

Supplementary figures

Supplementary figures Supplementary figures Supplementary Figure 1. A, Schematic of a Au/SRO113/SRO214 junction. A 15-nm thick SRO113 layer was etched along with 30-nm thick SRO214 substrate layer. To isolate the top Au electrodes

More information

Low dimensional magnetism Experiments

Low dimensional magnetism Experiments Low dimensional magnetism Experiments Olivier Fruchart Brasov (Romania), Sept. 2003 1 Introduction...................................... 2 2 Ferromagnetic order................................. 2 2.1 Methods.....................................

More information

Trajectory of the anomalous Hall effect towards the quantized state in a ferromagnetic topological insulator

Trajectory of the anomalous Hall effect towards the quantized state in a ferromagnetic topological insulator Trajectory of the anomalous Hall effect towards the quantized state in a ferromagnetic topological insulator J. G. Checkelsky, 1, R. Yoshimi, 1 A. Tsukazaki, 2 K. S. Takahashi, 3 Y. Kozuka, 1 J. Falson,

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION Insulating Interlocked Ferroelectric and Structural Antiphase Domain Walls in Multiferroic YMnO 3 T. Choi 1, Y. Horibe 1, H. T. Yi 1,2, Y. J. Choi 1, Weida. Wu 1, and S.-W. Cheong

More information

Stabilization of highly polar BiFeO 3 like structure: a new interface design route for enhanced ferroelectricity in artificial perovskite superlattice

Stabilization of highly polar BiFeO 3 like structure: a new interface design route for enhanced ferroelectricity in artificial perovskite superlattice Stabilization of highly polar BiFeO 3 like structure: a new interface design route for enhanced ferroelectricity in artificial perovskite superlattice Speaker: Xifan Wu Temple University Outline Part I.

More information

Probing Matter: Diffraction, Spectroscopy and Photoemission

Probing Matter: Diffraction, Spectroscopy and Photoemission Probing Matter: Diffraction, Spectroscopy and Photoemission Anders Nilsson Stanford Synchrotron Radiation Laboratory Why X-rays? VUV? What can we hope to learn? 1 Photon Interaction Incident photon interacts

More information