SUPPLEMENTARY INFORMATION

Size: px
Start display at page:

Download "SUPPLEMENTARY INFORMATION"

Transcription

1 SUPPLEMENTARY INFORMATION DOI: 1.138/NPHYS98 Electric-field-induced ferromagnetic resonance excitation in an ultrathin ferromagnetic metal layer Takayuki Nozaki 1,*, 3, Yoichi Shiota 1, Shinji Miwa 1, Shinichi Murakami 1, Frédéric Bonell 1, Shota Ishibashi 1, Hitoshi Kubota, Kay Yakushiji, Takeshi Saruya, Akio Fukushima, Shinji Yuasa, Teruya Shinjo 1, Yoshishige Suzuki 1 1 Graduate School of Engineering Science, Osaka University, Osaka, , Japan National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki, , Japan 3 PRESTO, JST, Honcho, Kawaguchi, Saitama, 33-1, Japan * nozaki-t@aist.go.jp NATURE PHYSICS 1

2 Supplementary information 1. FeCo thickness dependence of the perpendicular magnetic anisotropy Figure S1 shows tunnel magnetoresistance curves of magnetic tunnel junctions with various FeCo thicknesses. External magnetic fields were applied perpendicular to the film plane. The thickness was varied from.54 to.77 nm. In this thickness range, the magnetic easy axis exists in the film plane, however, the magnetization can be directed to the out-of-plane by a relatively small perpendicular field of less than.5 T. Its magnetization process can be observed as the saturation behavior in the MR curve. To only focus on the change in the saturation field, the vertical axis was normalized by the maximum (at H ex = T) and minimum (at H ex =.5 T) resistance values in this figure. Changes in the saturation field lect the difference in the perpendicular anisotropy of the ultrathin FeCo layer depending on its thickness. The thinner sample tends to show the smaller saturation field; that is, it has the larger perpendicular magnetic anisotropy. Figure S1 FeCo thickness dependence of the normalized tunnel magnetoresistance curves measured under perpendicular magnetic fields.

3 . Analytical expression of the homodyne detection signal intensity Let us consider the macroscopic spin S of the ultrathin FeCo free layer that points in the (, ) direction in a spherical coordinate system (see Fig. S, = in this figure). Definition of the axis is the same with the Fig. 3a, however, we introduce an in-plane rotation angle, 1 for the spin of the top Fe (erence) layer, unit vectors of the S and cos,, sin S are given as e, and S here. The e cos, sin, 1 1 1, respectively ( e is expressed by ŝ in the main text). An external magnetic field, which is applied in the x-z plane, is expressed as H H cos,,sin, here we assigned a negative sign because it is assumed ex ex H H to be almost opposite to the spin S. The magnetic energy U of this system is expressed as, H //, E 1 t U Me //, H H e Me Hex Hdeff, V t coscos H coscos coscos H 1 M cossin H//, H cossin M cossin sin Hdeff, V sin sin //, E ex, x H ex, z Here, M is the saturation magnetization. The first term represents the magnetic anisotropy energy, and the second term expresses the Zeeman energy. If we take into account an influence of spin-polarized tunneling current, the dynamics of the S is described by the following Landau-Lifshitz-Gilbert equation with the spin-transfer torque terms, de 1 de e Heff e ST e e1eft e e1. dt S dt e e e e e are the in-plane spin-transfer torque and Here, ST 1 and FT 1 field-like torque, respectively. ST and FT are coefficients for each torque. Voltage effect can be included as the change in the H as discussed in the main text. eff

4 Using the unit vectors in the and directions, e sin cos, sinsin, cos e sin, cos,, the homodyne detection signal is expressed as follows. t t R MR 1 11 Vdc t cos 1 4 R e e AP cos 1 1 U FT e e1st e e1 S cos VP V U cosft e e1 ST e e1 1 U U 1 e e1 e e1 S V V Scos 1 ST e e1 e e1 S V R MR U 11 U cos 1 1 e e e e VP S1. 4 R V S cos V AP 11 FT cos e e1 e e1 S cos V 11 ST cos 1 1 S cos e e e e V and e e1 S We assume that the relative angle of two ferromagnetic layers, H, because a perpendicular component of the applied external field is relatively small, i.e. the tilt angle of the erence layer to the out-of-plane direction can be neglected in the present measurement condition. Here, matrix is given as follows. U 1 U ˆ S cos. 1 U 1 1 U Scos Scos Scos If we only consider the voltage torque, Eq. S1 is simplified as follows, sin R MR 1 U 1 V t. dc V S 11 P 4 RAP sincos S V 1 S cos In our measurement condition, 1 =, only the dispersion structure is produced by the voltage torque.

5 Using the H H H ), 11 SHd, inplane cos SHext cos (here din, plane //, H //, E and assume H, the peak signal intensity is given as follows (Eq. 1 in the main text), R 1 H Vdc, peak MR V S 4 R V AP cossin P. 3 The peak intensity depends on the elevation angle, with the form of cossin. Figure S Spherical coordinate system of the macroscopic spin S of the ultrathin FeCo free layer, which points in the (,) direction (= in this figure). The x and y axes are defined to be parallel to the in-plane magnetic easy (// FeCo[1]) and hard axis of the free layer. The z-axis is normal to the film plane. An external magnetic field H H cos,,sin, which is almost is applied in the x-z plane, expressed as ex ex H H opposite to the spin S. 1 is the in-plane rotation angle of the spin of the erence layer, S. e and e are the unit vectors toward and directions. 3. In-plane field angle (rotation) dependence of the spectrum structure As we discussed in the main text, elevation angle dependence of the signal intensity provides clear evidence of the voltage-induced FMR excitation. An analysis of Eq. S1 also reveals another interesting point. For the case of voltage torque, the spectrum structure depends on the direction of the erence layer, i.e. 1. For example, under the assumption that the free layer is fixed in

6 the x-z plane (= degree), if S is parallel to the x axis ( = degree), the voltage torque produces a signal with the dispersion structure as observed in this experiment. On the other hand, if S is parallel to the y axis ( = 9 degrees), a signal with Lorentzian type structure will appear as expected from Eq. S. In contrast, field-like torque can only produce the dispersion type structure regardless of the angle as can be easily understood from Eq. S1. For the case of in-plane spin-transfer torque, we have both Lorentzian and dispersion terms; however, under the assumption of a large external magnetic field application, the dispersion part (the last term in Eq. S1) becomes negligibly small. Consequently, if the FMR excitation is induced by the spin-transfer torque or field-ike torque, the spectrum structure does not change at = and 9 degrees. These features come from the fact that the spin-transfer and field-like torque depend on the direction of the S, while the voltage torque is determined by the applied voltage and the erence layer is used only for the detection. To demonstrate this point, we investigated the dependence of the spectrum structure induced by both spin-transfer torque and voltage torque. Since the control of the erence layer direction is difficult in an actual experiment, we attempted to control the direction of the free layer magnetization by rotating the in-plane component of the external magnetic field ( H = and 9 degrees). The above discussion can be applied even in this situation by swapping the x and y axes. For the spin-torque induced FMR experiment, we used a sputter deposited sample with the structure of Buffer / PtMn(15) / Co 7 Fe 3 (.5) / Ru(.85) / Co 6 Fe B (3) / MgO(1)/Fe 8 B ()/MgO(1)/Ta(5) (thicknesses in nanometers). Cross-sectional shape of the element is circle with a diameter of 7 nm. Figure S3a and b show the results measured under the different external magnetic field angles of H = and 9 degrees, respectively. The amplitude and the elevation angle of the external magnetic field were fixed at. T and 8 degrees. Since the in-plane field component is small (.3 T) compared with the the exchange bias field of the erence layer, we can assume that the erence layer is fixed in the x-axis, and only the spin of the free layer rotates depending on the direction of the applied external magnetic field. As expected from the theory, no clear change was observed in the spectrum structure. A slight shift of the resonance frequency may possibly originate from the influence of the stray field of the erence layer. For the sample used to investigate the voltage effect, we cannot fix the erence

7 layer by an anti-ferromagnetic layer, so for this experiment, we fabricated a junction with a larger shape aspect ratio of the element,..8 m, in order to make the erence layer magnetically hard. With keeping the tilt angle H = 6 degrees and H ex =.1 T (the in-plane field component is about.5 T), homodyne detection signals were measured under rotation angles of H = and 9 degrees. We found that the dispersion structure observed at H = changed into the Lorentzian structure at H = 9 degree as shown in Fig. S3c and d. These results also can provide evidence of the voltage-induced FMR excitation. 1 1 (a) H = deg. 1 1 (b) H = 9 deg. DC voltage (V) DC voltage (V) DC voltage (V) (c) H = deg. DC voltage (V) (d) H = 9 deg. Figure S3 Rotation angle of the external magnetic field ( H ) dependence of the spectrum structure for the spin torque induced FMR ((a) H = degrees, and (b) H =9 degrees) and voltage induced FMR ((c) H = degrees, and (d) H =9 degrees). Elevation angles are H = 8 degrees for (a) and (b) and H = 6 degrees for (c) and (d), respectively.

8 The Eq. S1 predicts that the intensity of the Lorentzian type signal should be larger than the dispersion type; however, the opposite tendency was observed in the experiment. One possible origin of this discrepancy is the influence of the tilt angle of the Fe erence layer on the hard axis direction or magnetic domain formation due to an insufficient shape anisotropy field (judging from the magnetoresistance curve measured in the hard axis direction, the erence layer starts to rotate under the in-plane field of just around.5 T). To present a clear quantitative discussion, we need to prepare a junction with a tightly fixed erence layer, and perform further investigation. 4. Estimation of the efficiency, In order to discuss the intensity of the homodyne detection signal quantitatively, we have to take into account an influence of parasitic impedances in the sample, because there exists capacitance effect between the top and bottom electrode pads and inductance effect of the signal line. Figure S4a shows the equivalent circuit model of our system. Here, R represents the resistance of the magnetic tunnel junction. R p and C p model capacitance effects and loses between the upper and lower electrodes around the sample. Z s is a pure inductor. S 11 parameter measurement using a network analyzer is useful to evaluate the parasitic impedances. S 11 is defined as S Z Z / Z Z, 11 where Z and Z are the impedance of the sample and characteristic impedance of the measurement system (5 ). Z is the sum of Z s and Z p, here Z p consists of R, R p and C p (see Fig. S4). Figure S5a shows the fitting result of the S 11 measurement using this model for real (blue curve) and imaginary (red curve) parts. Transmission property of the rf signal was well reproduced by using the parameters of R =97, R p =6, C p =.9 pf, and Z s =1 ph. By using the evaluated values of Z p and Z s, the efficiency, in Eq. 1, is calculated as follows, p Z s p Z Z Z S4. Fig. S5b represents the estimated. For example, at around 6 GHz, is about 1. Figure S4 The equivalent circuit model used to fit the S 11 parameter measurement.

9 S Im[S 11 ] Experiment: Real part Experiment: Imaginary part Fitting: Real part Fitting: Imaginary part Re[S 11 ] (a) Efficiendy, (b) Figure S5 Analysis of S 11 properties and efficiency. a, Blue (red) dots represent experimental results of real (imaginary) parts and blue (red) lines represent the theoretical fitting results. b, Efficiency, calculated by Eq. S4. It should be mentioned that these parasitic impedances also affect on the precession angle estimation. For this case, we need to multiply a precession efficiency factor, to the Eq. () in the main text, where, the is expressed as follows. R p s 5 p Z Z Z Z R Z S Figure S6 shows the estimated for our sample. This factor is small in a low frequency range, e.g. at 1 GHz discussed in the main text, but in the high frequency range, we need to take into account this correction caully. Precession efficiency, Figure S6 Frequency dependence of the precession efficiency factor, for the quantitative evaluation of the FMR precession angle

Perpendicular magnetic anisotropy induced by Rashba spin- orbit interaction

Perpendicular magnetic anisotropy induced by Rashba spin- orbit interaction New Perspectives in Spintronics and Mesoscopic Physics ISSP Kashiwa, U Tokyo 2015 June 16 Perpendicular magnetic anisotropy induced by Rashba spin- orbit interaction 家田淳一 Jun ichi Ieda Advanced Science

More information

MSE 7025 Magnetic Materials (and Spintronics)

MSE 7025 Magnetic Materials (and Spintronics) MSE 7025 Magnetic Materials (and Spintronics) Lecture 14: Spin Transfer Torque And the future of spintronics research Chi-Feng Pai cfpai@ntu.edu.tw Course Outline Time Table Week Date Lecture 1 Feb 24

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION doi: 10.1038/nPHYS147 Supplementary Materials for Bias voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions Se-Chung Oh 1,

More information

Supplementary material for : Spindomain-wall transfer induced domain. perpendicular current injection. 1 ave A. Fresnel, Palaiseau, France

Supplementary material for : Spindomain-wall transfer induced domain. perpendicular current injection. 1 ave A. Fresnel, Palaiseau, France SUPPLEMENTARY INFORMATION Vertical-current-induced Supplementary material for : Spindomain-wall transfer induced domain motion wallin MgO-based motion in MgO-based magnetic magnetic tunnel tunneljunctions

More information

Resonance Measurement of Nonlocal Spin Torque in a Three-Terminal Magnetic Device

Resonance Measurement of Nonlocal Spin Torque in a Three-Terminal Magnetic Device Resonance Measurement of Nonlocal Spin Torque in a Three-Terminal Magnetic Device Lin Xue 1, Chen Wang 1, Yong-Tao Cui 1, Luqiao Liu 1, A. Swander 1, J. Z. Sun 3, R. A. Buhrman 1 and D. C. Ralph 1,2 1

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION Large voltage-induced netic anisotropy change in a few atomic layers of iron T. Maruyama 1, Y. Shiota 1, T. Noaki 1, K. Ohta 1, N. Toda 1, M. Miuguchi 1, A. A. Tulapurkar 1, T.

More information

Supplementary Notes of spin-wave propagation in cubic anisotropy materials

Supplementary Notes of spin-wave propagation in cubic anisotropy materials Supplementary Notes of spin-wave propagation in cubic anisotropy materials Koji Sekiguchi, 1, 2, Seo-Won Lee, 3, Hiroaki Sukegawa, 4 Nana Sato, 1 Se-Hyeok Oh, 5 R. D. McMichael, 6 and Kyung-Jin Lee3, 5,

More information

Magnetic oscillations driven by the spin Hall effect in 3-terminal magnetic tunnel junction. devices. Cornell University, Ithaca, NY 14853

Magnetic oscillations driven by the spin Hall effect in 3-terminal magnetic tunnel junction. devices. Cornell University, Ithaca, NY 14853 Magnetic oscillations driven by the spin Hall ect in 3-terminal magnetic tunnel junction devices Luqiao Liu 1, Chi-Feng Pai 1, D. C. Ralph 1,2, R. A. Buhrman 1 1 Cornell University, Ithaca, NY 14853 2

More information

Robust magnon-photon coupling in a planar-geometry hybrid of. inverted split-ring resonator and YIG film

Robust magnon-photon coupling in a planar-geometry hybrid of. inverted split-ring resonator and YIG film SUPPLEMENTARY MATERIALS Robust magnon-photon coupling in a planar-geometry hybrid of inverted split-ring resonator and YIG film Bianath Bhoi, Bosung Kim, Junhoe Kim, Young-Jun Cho and Sang-Koog Kim a)

More information

voltage measurement for spin-orbit torques"

voltage measurement for spin-orbit torques SUPPLEMENTARY for article "Accurate analysis for harmonic Hall voltage measurement for spin-orbit torques" Seok Jin Yun, 1 Eun-Sang Park, 2 Kyung-Jin Lee, 1,2 and Sang Ho Lim 1,* 1 Department of Materials

More information

Supplementary Materials : Self-Injection Locking of a Vortex Spin Torque Oscillator by Delayed Feedback

Supplementary Materials : Self-Injection Locking of a Vortex Spin Torque Oscillator by Delayed Feedback Supplementary Materials : Self-Injection Locking of a Vortex Spin Torque Oscillator by Delayed Feedback S. Tsunegi 1,2, E. Grimaldi 1, R. Lebrun 1, H. Kubota 2, A.S. Jenkins 1, K. Yakushiji 2, A. Fukushima

More information

Spin-transfer switching and thermal stability in an FePt/Au/FePt nanopillar prepared by alternate monatomic layer deposition

Spin-transfer switching and thermal stability in an FePt/Au/FePt nanopillar prepared by alternate monatomic layer deposition Spin-transfer switching and thermal stability in an FePt/Au/FePt nanopillar prepared by alternate monatomic layer deposition Kay Yakushiji, Shinji Yuasa, Taro Nagahama, Akio Fukushima, Hitoshi Kubota,

More information

Ferromagnetic resonance in Yttrium Iron Garnet

Ferromagnetic resonance in Yttrium Iron Garnet Author:. Facultat de Física, Universitat de Barcelona, Diagonal 645, 08028 Barcelona, Spain. Advisor: Joan Manel Hernàndez Ferràs Abstract: his work presents a study of the ferromagnetic resonance of an

More information

Angular and temperature dependence of current induced spin-orbit effective fields in Ta/CoFeB/MgO nanowires

Angular and temperature dependence of current induced spin-orbit effective fields in Ta/CoFeB/MgO nanowires Supplementary Information Angular and temperature dependence of current induced spin-orbit effective fields in Ta/CoFeB/MgO nanowires Xuepeng Qiu 1, Praveen Deorani 1, Kulothungasagaran Narayanapillai

More information

Theory of Spin Diode Effect

Theory of Spin Diode Effect Theory of Spin Diode Effect Piotr Ogrodnik Warsaw University of Technology and Institute of Molecular Physics Polish Academy of Sciences NANOSPIN Summarizing Meeting, Kraków, 11-12th July 216 Outline:

More information

Advanced Lab Course. Tunneling Magneto Resistance

Advanced Lab Course. Tunneling Magneto Resistance Advanced Lab Course Tunneling Magneto Resistance M06 As of: 015-04-01 Aim: Measurement of tunneling magnetoresistance for different sample sizes and recording the TMR in dependency on the voltage. Content

More information

arxiv: v1 [cond-mat.mes-hall] 2 Dec 2013

arxiv: v1 [cond-mat.mes-hall] 2 Dec 2013 Critical Field of Spin Torque Oscillator with Perpendicularly Magnetized Free Layer Tomohiro Taniguchi, Hiroko Arai, Sumito Tsunegi, Shingo Tamaru, Hitoshi Kubota, and Hiroshi Imamura National Institute

More information

Correlations between spin accumulation and degree of time-inverse breaking for electron gas in solid

Correlations between spin accumulation and degree of time-inverse breaking for electron gas in solid Correlations between spin accumulation and degree of time-inverse breaking for electron gas in solid V.Zayets * Spintronic Research Center, National Institute of Advanced Industrial Science and Technology

More information

Simulation Of Spin Wave Switching In Perpendicular Media

Simulation Of Spin Wave Switching In Perpendicular Media Simulation Of Spin Wave Switching In Perpendicular Media P. B.Visscher Department of Physics and Astronomy The University of Alabama Abstract We propose to build on our understanding of spin wave switching

More information

Annexure-I. network acts as a buffer in matching the impedance of the plasma reactor to that of the RF

Annexure-I. network acts as a buffer in matching the impedance of the plasma reactor to that of the RF Annexure-I Impedance matching and Smith chart The output impedance of the RF generator is 50 ohms. The impedance matching network acts as a buffer in matching the impedance of the plasma reactor to that

More information

Spin pumping in magnetic trilayer structures with an MgO barrier Supplementary Information.

Spin pumping in magnetic trilayer structures with an MgO barrier Supplementary Information. Spin pumping in magnetic trilayer structures with an MgO barrier Supplementary Information. A. A. Baker, 1, 2 A. I. Figueroa, 2 D. Pingstone, 3 V. K. Lazarov, 3 G. van der Laan, 2 and 1, a) T. Hesjedal

More information

High-frequency measurements of spin-valve films and devices invited

High-frequency measurements of spin-valve films and devices invited JOURNAL OF APPLIED PHYSICS VOLUME 93, NUMBER 10 15 MAY 003 High-frequency measurements of spin-valve films and devices invited Shehzaad Kaka, John P. Nibarger, and Stephen E. Russek a) National Institute

More information

V High frequency magnetic measurements

V High frequency magnetic measurements V High frequency magnetic measurements Rémy Lassalle-Balier What we are doing and why Ferromagnetic resonance CHIMP memory Time-resolved magneto-optic Kerr effect NISE Task 8 New materials Spin dynamics

More information

Supplementary figures

Supplementary figures Supplementary figures Supplementary Figure 1. A, Schematic of a Au/SRO113/SRO214 junction. A 15-nm thick SRO113 layer was etched along with 30-nm thick SRO214 substrate layer. To isolate the top Au electrodes

More information

Direct observation of the skyrmion Hall effect

Direct observation of the skyrmion Hall effect SUPPLEMENTARY INFORMATION DOI: 10.1038/NPHYS3883 Direct observation of the skyrmion Hall effect Wanjun Jiang 1,2,3, *,, Xichao Zhang 4,*, Guoqiang Yu 5, Wei Zhang 1, Xiao Wang 6, M. Benjamin Jungfleisch

More information

Control of Spins in a Nano-sized Magnet Using Electric-current and Voltage

Control of Spins in a Nano-sized Magnet Using Electric-current and Voltage FERURY 2015 vol. 25 no. 1 feature articles Control of Spins in a Nano-sized Magnet Using Electric-current and Voltage Y. SUZUKI 1, 2, 3, 4, S. MIW 1, 3, T. NOZKI 2, 3, Y. SHIOT 2, 3 1 GRDUTE SCHOOL OF

More information

Unidirectional spin-wave heat conveyer

Unidirectional spin-wave heat conveyer Unidirectional spin-wave heat conveyer Figure S1: Calculation of spin-wave modes and their dispersion relations excited in a 0.4 mm-thick and 4 mm-diameter Y 3 Fe 5 O 12 disk. a, Experimentally obtained

More information

Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor. (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction

Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor. (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction D. Chiba 1, 2*, Y. Sato 1, T. Kita 2, 1, F. Matsukura 1, 2, and H. Ohno 1, 2 1 Laboratory

More information

Electronic Supplementary Information for

Electronic Supplementary Information for Electronic Supplementary Material (ESI) for Journal of Materials Chemistry C. This journal is The Royal Society of Chemistry 018 Electronic Supplementary Information for Broadband Photoresponse Based on

More information

Magneto-Seebeck effect in spin-valve with in-plane thermal gradient

Magneto-Seebeck effect in spin-valve with in-plane thermal gradient Magneto-Seebeck effect in spin-valve with in-plane thermal gradient S. Jain 1, a), D. D. Lam 2, b), A. Bose 1, c), H. Sharma 3, d), V. R. Palkar 1, e), C. V. Tomy 3, f), Y. Suzuki 2, g) 1, h) and A. A.

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION Supramolecular Spin Valves M. Urdampilleta, 1 J.-P. Cleuziou, 1 S. Klyatskaya, 2 M. Ruben, 2,3* W. Wernsdorfer 1,* 1 Institut Néel, associé á l Université Joseph Fourier, CNRS, BP 166, 38042 Grenoble Cedex

More information

From Spin Torque Random Access Memory to Spintronic Memristor. Xiaobin Wang Seagate Technology

From Spin Torque Random Access Memory to Spintronic Memristor. Xiaobin Wang Seagate Technology From Spin Torque Random Access Memory to Spintronic Memristor Xiaobin Wang Seagate Technology Contents Spin Torque Random Access Memory: dynamics characterization, device scale down challenges and opportunities

More information

9. Spin Torque Majority Gate

9. Spin Torque Majority Gate eyond MOS computing 9. Spin Torque Majority Gate Dmitri Nikonov Thanks to George ourianoff Dmitri.e.nikonov@intel.com 1 Outline Spin majority gate with in-pane magnetization Spin majority gate with perpendicular

More information

Supplementary Information: Electrically Driven Single Electron Spin Resonance in a Slanting Zeeman Field

Supplementary Information: Electrically Driven Single Electron Spin Resonance in a Slanting Zeeman Field 1 Supplementary Information: Electrically Driven Single Electron Spin Resonance in a Slanting Zeeman Field. Pioro-Ladrière, T. Obata, Y. Tokura, Y.-S. Shin, T. Kubo, K. Yoshida, T. Taniyama, S. Tarucha

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION UPPLEMENTARY INFORMATION doi: 0.038/nmat78. relaxation time, effective s polarization, and s accumulation in the superconducting state The s-orbit scattering of conducting electrons by impurities in metals

More information

Exchange Splitting of Backward Volume Spin Wave Configuration Dispersion Curves in a Permalloy Nano-stripe

Exchange Splitting of Backward Volume Spin Wave Configuration Dispersion Curves in a Permalloy Nano-stripe 760 PIERS Proceedings, Kuala Lumpur, MALAYSIA, March 27 30, 2012 Exchange Splitting of Backward Volume Spin Wave Configuration Dispersion Curves in a Permalloy Nano-stripe G. Venkat 1, A. Prabhakar 1,

More information

Accelerator Physics NMI and Synchrotron Radiation. G. A. Krafft Old Dominion University Jefferson Lab Lecture 16

Accelerator Physics NMI and Synchrotron Radiation. G. A. Krafft Old Dominion University Jefferson Lab Lecture 16 Accelerator Physics NMI and Synchrotron Radiation G. A. Krafft Old Dominion University Jefferson Lab Lecture 16 Graduate Accelerator Physics Fall 17 Oscillation Frequency nq I n i Z c E Re Z 1 mode has

More information

10. Magnetoelectric Switching

10. Magnetoelectric Switching Beyond CMOS computing 10. Magnetoelectric Switching Dmitri Nikonov Dmitri.e.nikonov@intel.com 1 Outline Magnetoelectric effect to improve spintronic switching Review of experiments on magnetoelectric switching:

More information

High-Performance PEDOT:PSS/Single-Walled Carbon Nanotube/Ionic liquid Actuators Combining Electrostatic Double-Layer and Faradaic Capacitors

High-Performance PEDOT:PSS/Single-Walled Carbon Nanotube/Ionic liquid Actuators Combining Electrostatic Double-Layer and Faradaic Capacitors Supporting Information High-Performance PEDOT:PSS/Single-Walled Carbon Nanotube/Ionic liquid Actuators Combining Electrostatic Double-Layer and Faradaic Capacitors Naohiro Terasawa *, Kinji Asaka Inorganic

More information

Magnetoresistance and Spin-Transfer Torque in Magnetic Tunnel Junctions. J. Z. Sun 1 and D. C. Ralph , USA. Abstract:

Magnetoresistance and Spin-Transfer Torque in Magnetic Tunnel Junctions. J. Z. Sun 1 and D. C. Ralph , USA. Abstract: Magnetoresistance and Spin-Transfer Torque in Magnetic Tunnel Junctions J. Z. Sun 1 and D. C. Ralph 2 1 IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA 2 Laboratory of Atomic and

More information

Saroj P. Dash. Chalmers University of Technology. Göteborg, Sweden. Microtechnology and Nanoscience-MC2

Saroj P. Dash. Chalmers University of Technology. Göteborg, Sweden. Microtechnology and Nanoscience-MC2 Silicon Spintronics Saroj P. Dash Chalmers University of Technology Microtechnology and Nanoscience-MC2 Göteborg, Sweden Acknowledgement Nth Netherlands University of Technology Sweden Mr. A. Dankert Dr.

More information

Current-Induced Domain-Wall Dynamics in Ferromagnetic Nanowires

Current-Induced Domain-Wall Dynamics in Ferromagnetic Nanowires Current-Induced Domain-Wall Dynamics in Ferromagnetic Nanowires Benjamin Krüger 17.11.2006 1 Model The Micromagnetic Model Current Induced Magnetisation Dynamics Phenomenological Description Experimental

More information

Large-amplitude coherent spin waves excited by spin-polarized current in nanoscale spin valves

Large-amplitude coherent spin waves excited by spin-polarized current in nanoscale spin valves Large-amplitude coherent spin waves excited by spin-polarized current in nanoscale spin valves I. N. Krivorotov Department of Physics and Astronomy, University of California, Irvine, California 92697-4575,

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION DOI: 10.1038/NNANO.2014.16 Electrical detection of charge current-induced spin polarization due to spin-momentum locking in Bi 2 Se 3 by C.H. Li, O.M.J. van t Erve, J.T. Robinson,

More information

Spin orbit torque driven magnetic switching and memory. Debanjan Bhowmik

Spin orbit torque driven magnetic switching and memory. Debanjan Bhowmik Spin orbit torque driven magnetic switching and memory Debanjan Bhowmik Spin Transfer Torque Fixed Layer Free Layer Fixed Layer Free Layer Current coming out of the fixed layer (F2) is spin polarized in

More information

12. Introduction and Chapter Objectives

12. Introduction and Chapter Objectives Real Analog - Circuits 1 Chapter 1: Steady-State Sinusoidal Power 1. Introduction and Chapter Objectives In this chapter we will address the issue of power transmission via sinusoidal or AC) signals. This

More information

Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel. Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer

Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel. Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer Jun HAYAKAWA 1,2, Shoji IKEDA 2, Young Min LEE 2, Ryutaro SASAKI

More information

Capacitor. Capacitor (Cont d)

Capacitor. Capacitor (Cont d) 1 2 1 Capacitor Capacitor is a passive two-terminal component storing the energy in an electric field charged by the voltage across the dielectric. Fixed Polarized Variable Capacitance is the ratio of

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION SUPPLEENTARY INFORATION DOI: 1.138/NAT3459 agnetic nano-oscillator driven by pure spin current Vladislav E. Demidov 1*, Sergei Urazhdin, Henning Ulrichs 1, Vasyl Tiberevich 3, Andrei Slavin 3, Dietmar

More information

Large-amplitude coherent spin waves exited by spin-polarized current in nanoscale spin valves

Large-amplitude coherent spin waves exited by spin-polarized current in nanoscale spin valves Large-amplitude coherent spin waves exited by spin-polarized current in nanoscale spin valves I. N. Krivorotov Department of Physics and Astronomy, University of California, Irvine, CA 92697-4575 D. V.

More information

Magnetization Dynamics

Magnetization Dynamics Magnetization Dynamics Italian School on Magnetism Pavia - 6-10 February 2012 Giorgio Bertotti INRIM - Istituto Nazionale di Ricerca Metrologica, Torino, Italy Part I Free energy of a ferromagnetic body:

More information

MEASURE THE COMPLEX PERMEABILITY OF FER- ROMAGNETIC THIN FILMS: COMPARISON SHORTED MICROSTRIP METHOD WITH MICROSTRIP TRANS- MISSION METHOD

MEASURE THE COMPLEX PERMEABILITY OF FER- ROMAGNETIC THIN FILMS: COMPARISON SHORTED MICROSTRIP METHOD WITH MICROSTRIP TRANS- MISSION METHOD Progress In Electromagnetics Research Letters, Vol. 11, 173 181, 2009 MEASURE THE COMPLEX PERMEABILITY OF FER- ROMAGNETIC THIN FILMS: COMPARISON SHORTED MICROSTRIP METHOD WITH MICROSTRIP TRANS- MISSION

More information

Gate voltage modulation of spin-hall-torque-driven magnetic switching. Cornell University, Ithaca, NY 14853

Gate voltage modulation of spin-hall-torque-driven magnetic switching. Cornell University, Ithaca, NY 14853 Gate voltage modulation of spin-hall-torque-driven magnetic switching Luqiao Liu 1, Chi-Feng Pai 1, D. C. Ralph 1,2 and R. A. Buhrman 1 1 Cornell University, Ithaca, NY 14853 2 Kavli Institute at Cornell,

More information

Dynamically-generated pure spin current in single-layer graphene

Dynamically-generated pure spin current in single-layer graphene Dynamically-generated pure spin current in single-layer graphene Zhenyao Tang 1,#, Eiji Shikoh 1,#, Hiroki Ago 2, Kenji Kawahara 2, Yuichiro Ando 1, Teruya Shinjo 1 and Masashi Shiraishi 1,* 1. Graduate

More information

Spin Injection into a Graphene Thin Film at Room Temperature

Spin Injection into a Graphene Thin Film at Room Temperature Spin Injection into a Graphene Thin Film at Room Temperature Megumi Ohishi, Masashi Shiraishi*, Ryo Nouchi, Takayuki Nozaki, Teruya Shinjo, and Yoshishige Suzuki Graduate School of Engineering Science,

More information

Ferromagnetic resonance linewidth in metallic thin films: Comparison of measurement methods

Ferromagnetic resonance linewidth in metallic thin films: Comparison of measurement methods JOURNAL OF APPLIED PHYSICS 99, 093909 2006 Ferromagnetic resonance linewidth in metallic thin films: Comparison of measurement methods Sangita S. Kalarickal, a Pavol Krivosik, b Mingzhong Wu, and Carl

More information

Observation of the intrinsic inverse spin Hall effect from ferromagnet

Observation of the intrinsic inverse spin Hall effect from ferromagnet Observation of the intrinsic inverse spin Hall effect from ferromagnet Ayaka Tsukahara #, Yuta Kitamura #, Eiji Shikoh, Yuichiro Ando, Teruya Shinjo and Masashi Shiraishi * # Graduate School of Engineering

More information

Spin-transfer-torque efficiency enhanced by edge-damage. of perpendicular magnetic random access memories

Spin-transfer-torque efficiency enhanced by edge-damage. of perpendicular magnetic random access memories Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories Kyungmi Song 1 and Kyung-Jin Lee 1,2,* 1 KU-KIST Graduate School of Converging Science and Technology,

More information

Molecular Spintronics using -Electron Molecules

Molecular Spintronics using -Electron Molecules 2008.12.18 TU-Dresden Molecular Spintronics using -Electron Molecules Masashi Shiraishi 1. Osaka University, Japan. 2. JST-PRESTO, Japan Co-workers in this study Osaka University Prof. Yoshishige Suzuki

More information

Chapter 33. Alternating Current Circuits

Chapter 33. Alternating Current Circuits Chapter 33 Alternating Current Circuits 1 Capacitor Resistor + Q = C V = I R R I + + Inductance d I Vab = L dt AC power source The AC power source provides an alternative voltage, Notation - Lower case

More information

Chapter 32A AC Circuits. A PowerPoint Presentation by Paul E. Tippens, Professor of Physics Southern Polytechnic State University

Chapter 32A AC Circuits. A PowerPoint Presentation by Paul E. Tippens, Professor of Physics Southern Polytechnic State University Chapter 32A AC Circuits A PowerPoint Presentation by Paul E. Tippens, Professor of Physics Southern Polytechnic State University 2007 Objectives: After completing this module, you should be able to: Describe

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION In the format provided by the authors and unedited. DOI: 10.1038/NPHYS3965 Control of the millisecond spin lifetime of an electrically probed atom William Paul 1, Kai Yang 1,2, Susanne Baumann 1,3, Niklas

More information

External high-quality-factor resonator tunes up nuclear magnetic resonance

External high-quality-factor resonator tunes up nuclear magnetic resonance External high-quality-factor resonator tunes up nuclear magnetic resonance Stephan Appelt 1,*, Martin Suefke 3, Alexander Liebisch, and Bernhard Blümich 1 Central Institute for Engineering, Electronics

More information

SPIN TRANSFER TORQUES IN HIGH ANISOTROPY MAGNETIC NANOSTRUCTURES

SPIN TRANSFER TORQUES IN HIGH ANISOTROPY MAGNETIC NANOSTRUCTURES CRR Report Number 29, Winter 2008 SPIN TRANSFER TORQUES IN HIGH ANISOTROPY AGNETIC NANOSTRUCTURES Eric Fullerton 1, Jordan Katine 2, Stephane angin 3, Yves Henry 4, Dafine Ravelosona 5, 1 University of

More information

arxiv: v1 [cond-mat.mtrl-sci] 5 Oct 2018

arxiv: v1 [cond-mat.mtrl-sci] 5 Oct 2018 Applied Physics Express Zero-field dynamics stabilized by in-plane shape anisotropy in MgO-based spin-torque oscillators Ewa Kowalska,, Attila Kákay, Ciarán Fowley, Volker Sluka, Jürgen Lindner, Jürgen

More information

Spin transfer torque devices utilizing the giant spin Hall effect of tungsten

Spin transfer torque devices utilizing the giant spin Hall effect of tungsten Spin transfer torque devices utilizing the giant spin Hall effect of tungsten Chi-Feng Pai, 1,a) Luqiao Liu, 1 Y. Li, 1 H. W. Tseng, 1 D. C. Ralph 1,2 and R. A. Buhrman 1 1 Cornell University, Ithaca,

More information

Chapter 103 Spin-Polarized Scanning Tunneling Microscopy

Chapter 103 Spin-Polarized Scanning Tunneling Microscopy Chapter 103 Spin-Polarized Scanning Tunneling Microscopy Toyo Kazu Yamada Keywords Spin-polarized tunneling current Spin polarization Magnetism 103.1 Principle Spin-polarized scanning tunneling microscopy

More information

arxiv: v1 [cond-mat.mtrl-sci] 7 Nov 2012

arxiv: v1 [cond-mat.mtrl-sci] 7 Nov 2012 Spin torque switching in perpendicular films at finite temperature, HP-13 Ru Zhu and P B Visscher arxiv:12111665v1 [cond-matmtrl-sci] 7 Nov 212 MINT Center and Department of Physics and Astronomy University

More information

DIRECTIVITY AND SENSITIVITY OF HIGH FREQUENCY CARRIER TYPE THIN-FILM MAGNETIC FIELD SENSOR

DIRECTIVITY AND SENSITIVITY OF HIGH FREQUENCY CARRIER TYPE THIN-FILM MAGNETIC FIELD SENSOR DIRECTIVITY AND SENSITIVITY OF HIGH FREQUENCY CARRIER TYPE THIN-FILM MAGNETIC FIELD SENSOR M. Yamaguchi a, M. Takezawa a, H. Ohdaira b, K. I. Arai a, and A. Haga b a Research Institute of Electrical Communication,

More information

1 of 7 8/2/ :10 PM

1 of 7 8/2/ :10 PM {This website: Please note: The following article is complete; it has been put into ASCII due to a) space requirement reduction and b) for having thus the possibility to enlarge the fairly small figures.

More information

An impedance method for spatial sensing of 3D cell constructs towards applications in tissue engineering

An impedance method for spatial sensing of 3D cell constructs towards applications in tissue engineering Electronic Supplementary Material (ESI) for Analyst. This journal is The Royal Society of Chemistry 2015 Supporting Information: An impedance method for spatial sensing of 3D cell constructs towards applications

More information

Free-standing Organic Transistors and Circuits. with Sub-micron thickness

Free-standing Organic Transistors and Circuits. with Sub-micron thickness Supplementary Information Free-standing Organic Transistors and Circuits with Sub-micron thickness Kenjiro Fukuda 1,2,3,4 (*), Tomohito Sekine 1, Rei Shiwaku 1, Takuya Morimoto 5, Daisuke Kumaki 1, and

More information

Current-induced Domain Wall Dynamics

Current-induced Domain Wall Dynamics Current-induced Domain Wall Dynamics M. Kläui, Fachbereich Physik & Zukunftskolleg Universität Konstanz Konstanz, Germany Starting Independent Researcher Grant Motivation: Physics & Applications Head-to-head

More information

Observation of the intrinsic inverse spin Hall effect in Ni 80 Fe 20. Yuichiro Ando, Teruya Shinjo and Masashi Shiraishi * #

Observation of the intrinsic inverse spin Hall effect in Ni 80 Fe 20. Yuichiro Ando, Teruya Shinjo and Masashi Shiraishi * # Observation of the intrinsic inverse spin Hall effect in Ni 80 Fe 20 Ayaka Tsukahara #, Yuta Kitamura #, Eiji Shikoh, Yuichiro Ando, Teruya Shinjo and Masashi Shiraishi * # Graduate School of Engineering

More information

NMR, the vector model and the relaxation

NMR, the vector model and the relaxation NMR, the vector model and the relaxation Reading/Books: One and two dimensional NMR spectroscopy, VCH, Friebolin Spin Dynamics, Basics of NMR, Wiley, Levitt Molecular Quantum Mechanics, Oxford Univ. Press,

More information

Mesoscopic quantized properties of magnetic-dipolar-mode oscillations in disk ferromagnetic particles

Mesoscopic quantized properties of magnetic-dipolar-mode oscillations in disk ferromagnetic particles Mesoscopic uantized properties of magnetic-dipolar-mode oscillations in disk ferromagnetic particles E.O. Kamenetskii, R. Shavit, and M. Sigalov Department of Electrical and Computer Engineering, Ben Gurion

More information

Power and Energy Measurement

Power and Energy Measurement Power and Energy Measurement EIE 240 Electrical and Electronic Measurement April 24, 2015 1 Work, Energy and Power Work is an activity of force and movement in the direction of force (Joules) Energy is

More information

Gabriel Kron's biography here.

Gabriel Kron's biography here. Gabriel Kron, Electric Circuit Model of the Schrödinger Equation, 1945 - Component of :... Page 1 of 12 {This website: Please note: The following article is complete; it has been put into ASCII due to

More information

Supplementary materials: Hyperthermic effects of dissipative structures of magnetic nanoparticles in large alternating magnetic fields

Supplementary materials: Hyperthermic effects of dissipative structures of magnetic nanoparticles in large alternating magnetic fields Supplementary materials: Hyperthermic effects of dissipative structures of magnetic nanoparticles in large alternating magnetic fields Hiroaki Mamiya and Balachandran Jeyadevan Appendix A: Verification

More information

Dispersion and Scaling Law of Dynamic Hysteresis Based on the Landau-Lifshitz-Gilbert Model

Dispersion and Scaling Law of Dynamic Hysteresis Based on the Landau-Lifshitz-Gilbert Model Dispersion and Scaling Law of Dynamic Hysteresis Based on the Landau-Lifshitz-Gilbert Model Siying Liu, Hongyi Zhang, Hao Yu * Department of Mathematical Sciences, Xi an Jiaotong-Liverpool University,

More information

Room-Temperature Electron Spin Transport in a Highly Doped Si Channel. AIT, Akita Research Institute of Advanced Technology, Akita , Japan

Room-Temperature Electron Spin Transport in a Highly Doped Si Channel. AIT, Akita Research Institute of Advanced Technology, Akita , Japan Room-Temperature Electron Spin Transport in a Highly Doped Si Channel Toshio Suzuki*, Tomoyuki Sasaki 1, Tohru Oikawa 1, Masashi Shiraishi, Yoshishige Suzuki, and Kiyoshi Noguchi 1 AIT, Akita Research

More information

Supplementary Materials for

Supplementary Materials for advances.sciencemag.org/cgi/content/full/3/4/e1602429/dc1 Supplementary Materials for Quantum imaging of current flow in graphene Jean-Philippe Tetienne, Nikolai Dontschuk, David A. Broadway, Alastair

More information

Handout 11: AC circuit. AC generator

Handout 11: AC circuit. AC generator Handout : AC circuit AC generator Figure compares the voltage across the directcurrent (DC) generator and that across the alternatingcurrent (AC) generator For DC generator, the voltage is constant For

More information

Analytical expression for the harmonic Hall voltages in evaluating spin orbit torques

Analytical expression for the harmonic Hall voltages in evaluating spin orbit torques Analytical expression for the harmonic all voltages in evaluating spin orbit torques Masamitsu ayashi National Institute for Materials Science, Tsukuba 35-47, Japan Solid understanding of current induced

More information

Edge conduction in monolayer WTe 2

Edge conduction in monolayer WTe 2 In the format provided by the authors and unedited. DOI: 1.138/NPHYS491 Edge conduction in monolayer WTe 2 Contents SI-1. Characterizations of monolayer WTe2 devices SI-2. Magnetoresistance and temperature

More information

R m. Radio-frequency capacitance spectroscopy of metallic nanoparticles: Supplementary Material

R m. Radio-frequency capacitance spectroscopy of metallic nanoparticles: Supplementary Material Radio-frequency capacitance spectroscopy of metallic nanoparticles: Supplementary Material J.C. Frake, 1 S. Kano,,3 C. Ciccarelli, 1 J. riths, 1 M. Sakamoto, 3,4,5 T. Teranishi, 3,4 Y. Majima,,3,6 C..

More information

Chapter 8 Magnetic Resonance

Chapter 8 Magnetic Resonance Chapter 8 Magnetic Resonance 9.1 Electron paramagnetic resonance 9.2 Ferromagnetic resonance 9.3 Nuclear magnetic resonance 9.4 Other resonance methods TCD March 2007 1 A resonance experiment involves

More information

Temperature dependence of spin diffusion length in silicon by Hanle-type spin. precession

Temperature dependence of spin diffusion length in silicon by Hanle-type spin. precession Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession T. Sasaki 1,a), T. Oikawa 1, T. Suzuki 2, M. Shiraishi 3, Y. Suzuki 3, and K. Noguchi 1 SQ Research Center, TDK

More information

Determination of the Interfacial Dzyaloshinskii-Moriya Interaction (idmi) in the Inversion Symmetry Broken Systems

Determination of the Interfacial Dzyaloshinskii-Moriya Interaction (idmi) in the Inversion Symmetry Broken Systems Determination of the Interfacial Dzyaloshinskii-Moriya Interaction (idmi) in the Inversion Symmetry Broken Systems 27 Nov. 2015 Chun-Yeol You (cyyou@inha.ac.kr) Dept. of Physics, Inha University, Korea

More information

Low Voltage Contact Electrostatic Discharge Phenomena

Low Voltage Contact Electrostatic Discharge Phenomena Conf Presentation - >SESSION.PAPER< - replace with your Session & Paper # (DOUBLE-CLICK HERE TO EDIT) < 1 Low Voltage Contact Electrostatic Discharge Phenomena Tetsuji Oda, Yuto Ono, Hiraku Miyasaka Abstract

More information

Single Spin Qubits, Qubit Gates and Qubit Transfer with Quantum Dots

Single Spin Qubits, Qubit Gates and Qubit Transfer with Quantum Dots International School of Physics "Enrico Fermi : Quantum Spintronics and Related Phenomena June 22-23, 2012 Varenna, Italy Single Spin Qubits, Qubit Gates and Qubit Transfer with Quantum Dots Seigo Tarucha

More information

Impedance/Reactance Problems

Impedance/Reactance Problems Impedance/Reactance Problems. Consider the circuit below. An AC sinusoidal voltage of amplitude V and frequency ω is applied to the three capacitors, each of the same capacitance C. What is the total reactance

More information

Mesoscopic Spintronics

Mesoscopic Spintronics Mesoscopic Spintronics Taro WAKAMURA (Université Paris-Sud) Lecture 1 Today s Topics 1.1 History of Spintronics 1.2 Fudamentals in Spintronics Spin-dependent transport GMR and TMR effect Spin injection

More information

Wouldn t it be great if

Wouldn t it be great if IDEMA DISKCON Asia-Pacific 2009 Spin Torque MRAM with Perpendicular Magnetisation: A Scalable Path for Ultra-high Density Non-volatile Memory Dr. Randall Law Data Storage Institute Agency for Science Technology

More information

FERROMAGNETIC RESONANCE MEASUREMENTS AND SIMULATIONS ON PERIODIC HOLE AND DISC ARRAYS. MISM Conference August, 2011

FERROMAGNETIC RESONANCE MEASUREMENTS AND SIMULATIONS ON PERIODIC HOLE AND DISC ARRAYS. MISM Conference August, 2011 FERROMAGNETIC RESONANCE MEASUREMENTS AND SIMULATIONS ON PERIODIC HOLE AND DISC ARRAYS J. Skelenar, S. Chernyashevskyy, J. B. Ketterson; Northwestern University V. Bhat, L. Delong; University of Kentucky

More information

Vectors for Physics. AP Physics C

Vectors for Physics. AP Physics C Vectors for Physics AP Physics C A Vector is a quantity that has a magnitude (size) AND a direction. can be in one-dimension, two-dimensions, or even three-dimensions can be represented using a magnitude

More information

Spin pumping in Ferromagnet-Topological Insulator-Ferromagnet Heterostructures Supplementary Information.

Spin pumping in Ferromagnet-Topological Insulator-Ferromagnet Heterostructures Supplementary Information. Spin pumping in Ferromagnet-Topological Insulator-Ferromagnet Heterostructures Supplementary Information. A.A. Baker,, 2 A.I. Figueroa, 2 L.J. Collins-McIntyre, G. van der Laan, 2 and T., a) Hesjedal )

More information

SUPPLEMENTARY NOTE 1: ANISOTROPIC MAGNETORESISTANCE PHE-

SUPPLEMENTARY NOTE 1: ANISOTROPIC MAGNETORESISTANCE PHE- SUPPLEMENTARY NOTE 1: ANISOTROPIC MAGNETORESISTANCE PHE- NOMENOLOGY In the main text we introduce anisotropic magnetoresistance (AMR) in analogy to ferromagnets where non-crystalline and crystalline contributions

More information

Microwave Assisted Magnetic Recording

Microwave Assisted Magnetic Recording Microwave Assisted Magnetic Recording, Xiaochun Zhu, and Yuhui Tang Data Storage Systems Center Dept. of Electrical and Computer Engineering Carnegie Mellon University IDEMA Dec. 6, 27 Outline Microwave

More information

Time resolved transport studies of magnetization reversal in orthogonal spin transfer magnetic tunnel junction devices

Time resolved transport studies of magnetization reversal in orthogonal spin transfer magnetic tunnel junction devices Invited Paper Time resolved transport studies of magnetization reversal in orthogonal spin transfer magnetic tunnel junction devices Georg Wolf a, Gabriel Chaves-O Flynn a, Andrew D. Kent a, Bartek Kardasz

More information