MRX1533L Series. AnaSem. Low power consumption, 1.5mT High sensitivity CMOS MR Magnetic Sensor Switch. Analog Semiconductor IC.
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1 安纳森 Analog Semiconductor IC Low power consumption, 1.5mT High sensitivity CMOS MR Magnetic Sensor Switch (IMPORTANT: Please check the last page for Genuine Product Labeling) Rev. E13-01 Website: Tel: Future of the analog world
2 Rev. E13-01 Products Data Sheet Analog Semiconductor IC GENERAL DESCRIPTIONS MRX1533L series are monolithic ICs with built-in MR magnet resistive element and CMOS switch. It becomes the non-contact switch with low current consumption, high sensitivity and reliability which is combined with magnet. A horizontal magnetic field parallel to the electrode of the package can be detected by an arbitrary polarity. (N pole S pole) HALOGEN RoHS COMPLIANCE FEATURES CMOS + MR monolithic structure Low current consumption 3.0µA (VIN=3.3V, Ta=5 C) High-sensitivity Typ. 1.5mT Operating temperature range -40 ~ +85 C Operating voltage range.5v ~ 3.7V Detection pulse driving cycle Typ. 50msec with 5µsec width Magnetic Both / CMOS inverter one output Detection magnetic field Horizontal of marked side of package (Electrode parallel both ) SOT-3 ( mm) Small package APPLICATIONS Detection of opening and closing : Mobile phone, Notebook PC, Microwave oven, Washing machine, Rice cooker, Refrigerator, Electronic dictionary, Digital camera, etc. Detection of position : Air cylinder, Antitheft window, Digital door lock, etc. Detection of water level : Water purifier, Humidifier, Bidet, etc. Detection of rotation : Water meter, Gas meter, Wattmeter, Speed meter, etc. Power supply switch : Cordless phone, Electric toothbrush, etc Future of the analog world
3 PRODUCTS NUMBERING GUIDE MRX1533L Design version A : CMOS output Package form T : SOT-3 ( mm) Detection pulse cycle L : Typ. 50msec with 5µsec width Operating voltage 33 :.5V ~ 3.7V Detection sensitivity 15 : Typ. 1.5mT PIN CONFIGURATION / MARKING SPECIFICATION Vss 3 A B C D D D D D 1 Vin Vout (Top view) Pin Configuration No. Symbol Descriptions 1 VIN Voltage input VOUT Output 3 VSS Power ground Marking Specification Code Mark Contents A M Series name BC AA Products specification & version D Internal rule Lot number
4 BLOCK DIAGRAM Switch Direction of magnetic field VSS R1 R3 R R4 T1 Sampling circuit Latch circuit CMOS drive circuit VOUT VIN ABSOLUTE MAXIMUM RATINGS Items Symbol Min. Typ. Max. Conditions Unit Operating temperature TOPR C Storage temperature TSTG C Supply voltage VMAX VIN VIN+6.0 V Assembly temp. condition TASY t=max:5sec/tmax C
5 ELECTRICAL CHARACTERISTICS (Unless otherwise specified, VDD=3.3V, Ta=5 C) Items Symbol Min. Typ. Max. Conditions Unit Operating voltage VIN V Current consumption IAVG µa Detection pulse driving cycle ts msec H -level output voltage VOH 0.9VIN - - IOUT=+1.0mA V L -level output voltage VOL VIN IOUT=-1.0mA V MAGNETIC CHARACTERISTICS (Unless otherwise specified, VDD=3.3V, Ta=5 C) Items Symbol Min. Typ. Max. Unit Magnetic flux density at operating point (H L) Magnetic flux density at release point (L H) MOPS 1.0 * MOPN * mt MRPS * mt MRPN -. * Width of hysteresis MHYS 0.1 * * mt Note : The values with [*] marks are guaranteed by design, not tested in production. MAGNETIC-ELECTRIC CONVERSION CHARACTERISTIC VOUT VOH N-pole S-pole VOL MHYS MHYS MRPN MOPN 0 MRPS MOPS Magnetic flux density
6 MAGNETIC FLUX DENSITY AND OUTPUT VOLTAGE LEVEL Conditions Magnet & Power Magnet flux density Output level Magnet = OFF / Power = ON M = 0mT High-level Magnet = ON / Power = ON M.5mT Low-level Magnet = OFF / Power = ON M 0.7mT High-level DETECTION PULSE DRIVING CYCLE (SAMPLING CYCLE) IDD Period (Typ. 50mS) Awake (5µS) (VDD=3.3V) IDD ON (Typ. 1.8mA) Sleep (Output latched) IDD AVG (Typ. 1.6µA) IDD OFF (Typ. 1.3µA) time OUTPUT SWITCHING TIMING CHART On Sampling pulse Off Magnetic flux MOP MRP MHYS (Typ. 1.5mT) (Typ. 1.mT) VOUT H-level L-level Latch Latch Latch
7 TEST CIRCUIT S or N VOUT Direction of magnetic field VSS N or S VIN A 15pF (including probe capacitance) STANDARD MAGNET SPECIFICATIONS P-point : Magnetic flux density measuring position 0.5mm 4.0mm 3.0mm Magnet maker : TDK Corp. / Japan Neodymium magnet Magnetic specification : NE047BW Size : mm Magnetization for reaction of sensor DETECTION DISTANCE SIMULATION (with standard magnet) Vertical (VD) Magnetic flux density (mt) Vertical distance (mm) ( HD = 0mm ) Standard magnet Detection point of sensor 1.5mT Horizontal (HD) Magnetic flux density (mt) Horizontal distance (mm) ( VD = 3mm ) Standard magnet Detection point of sensor 1.5mT
8 TYPICAL ELECTRIC CHARACTERISTICS Magnetic flux density vs. Input voltage (Ta=5 C) Magnetic flux density vs. Ambient temp. (VIN=3.3V) 3 3 Magnetic flux density (mt) MOPS MRPS MRPN MOPN Magnetic flux density (mt) MOPS MRPS MRPN MOPN Input voltage (V) Temperature ( C) Current consumption vs. Input voltage Current consumption vs. Ambient temp. 7 (Ta=5 C) 7 (VIN=3.3V) Current consumption (µa) Current consumption (µa) Input voltage (V) Temperature ( C) Sampling period vs. Input voltage Sampling period vs. Ambient temp. 90 (Ta=5 C) 90 (VIN=3.3V) Sampling period (msec) Sampling period (msec) Input voltage (V) Temperature ( C)
9 APPLICATION INFORMATIONS Detection of magnetic field To operate output switch, the magnetic field should be applied to the sensor with sufficient magnetic flux density and correct. MR series are designed to be ON-state (L-level output) when the horizontal magnetic field is applied in parallel to the marked side of sensor, with sufficient magnetic flux (MOPS or MOPN value) regardless of polarity of magnet. Because MR series detect the horizontal magnetic field, it has not influence of the reverse-magnetic field. And also, MR series detect the vertical magnetic field according to the level of magnetic flux, so that it is possible to apply to not only slide type but also fold type. Front view Top view VSS N or S S or N Detection N or S (Marked side) S or N VIN VOUT VIN VOUT Application example 1 -- [Fold type] Magnet MR sensor VD VD VD Position A Output level = Low Position B Output level = Low High Position C Output level = High In case MR series is used for fold type cellular phone, IC sense the conditions of opening and shutting of the cover by detection of the magnetic flux according to the distance between IC and magnet. In position A, output is L-level (ON-state) because the detected magnetic flux is sufficient. The magnetic flux decrease according to the magnet is moved from IC (Position A B). Then the IC is turned H-level (OFF-state) because the magnetic flux become MRP or less (Position B C). Magnetic field S or N N or S S or N Magnetic field N or S Detection Detection
10 Rev. E13-01 Application example -- [Slide type & Rotary type] Magnet MR sensor VD Position A Position B HD Position C HD Output level = Low Output level = Low High Output level = High Magnet MR sensor MR sensor MR sensor MR sensor Position A Position B Position C Position D Output level = High Low Output level = Low Output level = Low High Output level = High In the detection of the slide type, there are two ways of arrangement of magnetic field detecting against moving. One is parallel and another is cross with moving. In case of parallel positioning of magnetic field with moving [arrangement 1], the output of IC might be L-level (ON-state) H-level (OFF-state) L-level (ON-state) H-level (OFF-state) due to reverse-magnetic field. To prevent from this malfunction, it is recommended to arrange the detection of sensor and magnetic field to be crossed with moving of cover [arrangement ]. S or N N or S Magnetic field S or N N or S Magnetic field Detection Detection [Arrangement 1] Parallel the of detection magnetic field with the moving [Arrangement ] Cross the of detection magnetic field with the moving
11 PACKAGE DIMENSIONS (SOT-3) (Unit : mm) ± ~1.3.8±0. (Marked Side) 1.6±0.15 0~0.35 0~0.1 3~ ± ±0. Recommended land pattern 1.1~ ~
12 TAPING AND LOADING SPECIFICATIONS (SOT-3) (Unit : mm) 4.0±0.1 0.±0.05 Mark ø Mark.0± ± ± ± ±0. ø1.05± ± ±0.1 REEL DIMENSIONS (SOT-3) (Unit : mm) 90.0± ø13±0.5 ø60±1 ø178± 1.65 max. Taping (3,000 pcs / reel) 9.0±0.5
13 may change the products described in this data sheet, or may discontinue production or services without any notice in order to supply the best products through improve the design and performance. Customers are recommended to obtain the latest data or information before placing orders in order to make sure the data or information required is the newest. It is necessary for customers to fully understand the products described in this data sheet and to use it in accordance with its specifications. The products described in this data sheet are not intended to use for the apparatus which have influence on human lives due to the failure or malfunction of the products. Corp. is not responsible for any support to customer s application, product design, software performance, patent infringement or service. Corp. does not disclose or imply a guarantee or description about being licensed based on patents, copy-rights, circuit location license, or other intellectual properties associated with the devices or combinations in which the products or service of Corp. are used or can be used, or which cover the methods. Customers should not export, directly or indirectly, any products without obtaining required licenses and approvals in advance from appropriate government agencies.
14 GENUINE PRODUCT LEGITIMATE LABEL DEFINITION Green colored Circle RoHS Label Other specific customized Labels Ordinary Product Information Bar Our internal Outgoing Check Code 3 Code Our Internal QR Check Code Logo and Brand Name (Black color Logo) Our Internal Product Check Code 1 Genuine labels MUST include our correct contact information as shown
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Temperature range Name Description Version XC7SET32GW 40 C to +125 C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1.
Rev. 01 3 September 2009 Product data sheet 1. General description 2. Features 3. Ordering information is a high-speed Si-gate CMOS device. It provides a 2-input OR function. Symmetrical output impedance
NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
Rev. 0 26 September 2006 Product data sheet. Product profile. General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package..2
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Rev. 24 March 29 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package
Alfa-MOS Technology. AF V / 50mA Linear LED Driver
General Description The is a linear LED driver. The application of high bright LED is widely used for general illumination. The maximum output current is 50mA. Typical variations is % in V IN = 6 ~ 500V
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU IN A GND
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU 2 Input NOR Gate Features High-level output current: I OH /I OL = ±8 ma (min) at = 3.0 High-speed operation: t pd = 2.4 ns (typ.) at
Low-Voltage Analog Temperature Sensors in SC70 and SOT23 Packages
19-2040; Rev 1; 6/01 Low-Voltage Analog Temperature Sensors General Description The precision, low-voltage, analog output temperature sensors are available in 5-pin SC70 and SOT23 packages. The devices
MM74C14 Hex Schmitt Trigger
MM74C14 Hex Schmitt Trigger General Description The MM74C14 Hex Schmitt Trigger is a monolithic complementary MOS (CMOS) integrated circuit constructed with N- and P-channel enhancement transistors. The
H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M
PACKAGE OUTLINE SCHEMATIC 6 6 HAVS-M, HAV2S-M 6 HAV-M, HAV2-M 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 5 4 6 HAVA-M, HAV2A-M DESCRIPTION The general purpose optocouplers
TC7WB66CFK,TC7WB66CL8X TC7WB67CFK,TC7WB67CL8X
CMOS Digital Integrated Circuits Silicon Monolithic TC7WB66CFK,TC7WB66CL8X TC7WB67CFK,TC7WB67CL8X 1. Functional Description Dual SPST Bus Switch 2. General TC7WB66CFK/L8X,TC7WB67CFK/L8X The TC7WB66CFK/L8X
Technical Data Sheet 5mm Silicon PIN Photodiode, T-1 3/4
Technical Data Sheet 5mm Silicon PIN Photodiode, T-1 3/4 Features Fast response time High photo sensitivity Small junction capacitance Pb free The product itself will remain within RoHS compliant version.
RT9166B. 600mA, Ultra-Fast Transient Response Linear Regulator. General Description. Features. Ordering Information. Applications. Pin Configurations
Ordering Information Output Voltage 12 : 1.2V Note : Richtek products are : RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020. Suitable for use in SnPb or Pb-free soldering
S150PTD-1A. Technical Data Sheet. 3.2x1.6mm, Phototransistor LED Surface Mount Chip LED. Features: Descriptions: Applications:
Features: Fast response time. High photo sensitivity. Small junction capacitance. Package in 8mm tape on 7 diameter reel. The product itself will remain within RoHS compliant Version. Descriptions: The
2-input EXCLUSIVE-OR gate
Rev. 01 7 September 2009 Product data sheet 1. General description 2. Features 3. Ordering information is a high-speed Si-gate CMOS device. It provides a 2-input EXCLUSIVE-OR function. Symmetrical output
S3A - S3N General-Purpose Rectifiers
S3A - S3N General-Purpose Rectifiers Features Low-Profile Package Glass-Passivated Junction UL Flammability Classification: 94V-0 UL Certified, UL #E258596 SMC/DO-214AB COLOR BAND DENOTES CATHODE ELECTRICAL
AOZ1336DI. Single Channel Smart Load Switch. Features. General Description. Applications. Typical Application AOZ1336DI
Single Channel Smart Load Switch General Description The AOZ1336DI is a single channel load switch with typical 27mΩ on-resistance in a small package. It contains an n-channel MOSFET for up to 5.5V input
BCM857BV; BCM857BS; BCM857DS
BCM857BV; BCM857BS; BCM857DS Rev. 05 27 June 2006 Product data sheet 1. Product profile 1.1 General description in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated
NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)
CD40106BC Hex Schmitt Trigger
CD40106BC Hex Schmitt Trigger General Description The CD40106BC Hex Schmitt Trigger is a monolithic complementary MOS (CMOS) integrated circuit constructed with N and P-channel enhancement transistors.
N-channel TrenchMOS logic level FET
Rev. 2 3 November 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
70 db typ. (2.85 V output product, f = 1.0 khz) Built-in overcurrent protection circuit: Limits overcurrent of output transistor.
S-1333 Series www.sii-ic.com LOW CURRENT CONSUMPTION HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR SII Semiconductor Corporation, 211-214 Rev.2.3_1 The S-1333 Series, developed by using the
CPC3730CTR. 350V N-Channel Depletion-Mode FET (SOT-89) INTEGRATED CIRCUITS DIVISION
V (BR)DSX / V (BR)DGX R DS(on) (max) I DSS (min) Package 35V P 3 14mA SOT-89 Features Low R DS(on) at Cold Temperatures R DS(on) 3 max. at 25ºC High Input Impedance High Breakdown Voltage: 35V P Low (off)
BSS84 P-Channel Enhancement Mode Field-Effect Transistor
BSS8 P-Channel Enhancement Mode Field-Effect Transistor Features -. A, - V, R DS(ON) = Ω at V GS = - V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low R DS(ON) High Saturation
Is Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
TC4028BP, TC4028BF TC4028BP/BF. TC4028B BCD-to-Decimal Decoder. Pin Assignment TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4028BP, TC4028BF TC4028B BCD-to-Decimal Decoder TC4028B is a BCD-to-DECIMAL decoder which converts BCD signal into DECIMAL signal. Of ten outputs
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
4N37 HA HA2 HA3 HA4 HA5 WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE 5 4 BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The general purpose
Bipolar Detection Hall ICs
Hall IC Series / Hall IC(Latch type) Bipolar Detection Hall ICs BU52001GUL, BU52011HFV, BU52021HFV, BU52015GUL, BU52025G, BU52051NVX, BD711G Description The bipolar Hall ICs are magnetic switches that
Maintenance/ Discontinued
Video Camera LSI MN31121SA CCD Image Sensor Vertical Driver IC Overview The MN31121SA is a 2D interline CCD image sensor vertical driver IC that integrates four vertical driver channels and one SUB drive
HN58C256 Series word 8-bit Electrically Erasable and Programmable CMOS ROM
32768-word 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-092G (Z) Rev. 7.0 Nov. 29, 1994 Description The Hitachi HN58C256 is a electrically erasable and programmable ROM organized as 32768-word
FPF1007-FPF1009 IntelliMAX Advanced Load Products
FPF07-FPF09 IntelliMAX Advanced Load Products Features 1.2 to 5.5 V Input Voltage Range Typical R ON = 30 mω at = 5.5 V Typical R ON = 40 mω at = 3.3 V Fixed Three Different Turn-on Rise Time µs / 80 µs
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
TIL TIL-M TIL7-M MOC800-M WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC 5 4 PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MOC800, TIL and
MM74C906 Hex Open Drain N-Channel Buffers
Hex Open Drain N-Channel Buffers General Description The MM74C906 buffer employs monolithic CMOS technology in achieving open drain outputs. The MM74C906 consists of six inverters driving six N-channel
Quad 2-input NAND gate
Quad 2-input NAND gate BU40B / BU40BF / BU40BF The BU40B, BU40BF, and BU40BF are dual-input positive logic NAND gates. Four circuits are contained on a single chip. An inverter-based buffer has been added
74HC1GU04GV. 1. General description. 2. Features. 3. Ordering information. Marking. 5. Functional diagram. Inverter
Rev. 5 1 July 27 Product data sheet 1. General description 2. Features 3. Ordering information The is a high-speed Si-gate CMOS device. It provides an inverting single stage function. The standard output
Powered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)
DGE Powered-off Protection,,.8 V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The DGE is a high performance single-pole, double-throw (SPDT) analog switch designed for.8 V to 5.5 V operation
S-1137 Series HIGH RIPPLE-REJECTION LOW DROPOUT SOFT-START FUNCTION CMOS VOLTAGE REGULATOR. Features. Applications. Packages.
S-1137 Series www.ablicinc.com HIGH RIPPLE-REJECTION LOW DROPOUT SOFT-START FUNCTION CMOS VOLTAGE REGULATOR ABLIC Inc., 29-215 Rev.2.1_2 The S-1137 Series, developed using the CMOS technology, is a positive
2N7002DW N-Channel Enhancement Mode Field Effect Transistor
2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
Block Diagram 1 REG. VCC 2 Hall Plate Amp B 3 GND 4 Pin Assignment 277 (276) Front View 1 : VCC 2 : 3 : B :GND Name P/I/O Pin # Desc
E-MAIL: Features - On-chip Hall sensor with two different sensitivity and hysteresis settings for - 3.5V to 2V operating voltage - 4mA (avg) output sink current - Build-in protecting diode only for chip