Presented on American Physical Society March Meeting, March 16-20, 2009, Pittsburgh, PA,USA.
|
|
- Jeffry Walsh
- 5 years ago
- Views:
Transcription
1 Presented on American Physical Society March Meeting, March 16-20, 2009, Pittsburgh, PA,USA. A highly-ordered, high mobility organic semiconductor grown from a mesophase: A test of polaron band theory Naresh Shakya, Chandra Pokhrel, Brett Ellman, Shin - Woong Kang, and Satyen Kumar Department of Physics, Kent State University Yulia Getmanenko and Robert J. Twieg Department of Chemistry, Kent State University Acknowledgments This work was supported, in part, by the National Science Foundation and by an the Ohio Board of Regents Research Challenge award. Use of the Advanced Photon Source (APS) was supported by the U.S. Department of Energy (DOE), Basic Energy Sciences (BES), Office of Science. The Midwestern Universities Collaborative Access Team s (MUCAT) sector at the APS is supported by the U.S. DOE, BES, Office of Science, through theames Laboratory.
2 Introduction Why organic semiconductors? (comparing with Si or Ge) Often easier to purify Good solubility in organic solvents Low temperature processing Charge carrier mobility is comparable to amorphous silicon thin films Enable one to fabricate uniform large-area thin films Compatible with flexible substrates Parameters effecting mobility Aromaticity Closely packed molecular alignment Large overlap or transfer integral High positional and rotational order
3 Molecular Structure of the sample 1,4-di-(5-n-tridecylthien-2-yl)-benzene A thiophene-benzene-thiophene core with alkyl tails Calamitic liquid crystal Working Formula for the Experiment d E = Charge carrier mobility d= Thickness of the sample E= Electric field across the sample =Time of flight
4 Experimental Set up Figure 2-6: The basic set up for a carrier mobility measurement by the time of flight technique- (22)Voltage wire (23)Signal wire (24)ITO transparent electrode (25)Commercially available ITO coated glass substrate (26)Sample inside the cell (27)Laser light (28)Diodes (29)Current amplifier (30)Lecroy Wave Runner LT364L Digital Oscilloscope (31)SRS (Stanford Research Systems) Model DS345 30MHz Synthesized Function Generator or SRS Model PS325 / 2500 V voltage source (32)Capacitor (33) Voltage gain amplifier.
5 Study of Mesophases Differential scanning calorimetry (DSC) Polarized light microscopy Powder x-ray diffraction DSC diagram The phase sequence for cooling [1] I C SmF C SmG 91.7 C SmH 76.6 C Cr1 [1] - The smectic-f phase is relatively unusual, with 363 entries in the Liq.Crys 2003 database. A very useful review of the various smectics may be found in Gray and Goodby, Smectic Liquid Crystals, p. 153 (2004).
6 Intensity Powder x-ray diffraction [2] C C 44.0 C SmF SmG Cr1 2 Angle (Degree) Note both the high degree of order in the mesophase o In the SmF phase, it shows very large positional order o We measured the following correlation lengths () w.r.t. smectic planes. = orthogonal = nm = parallel = nm Note the similarity of the structures of the smectic and crystalline phases. [2] Powder x-ray studies were performed at the Advanced Photon Source at Argonne National Laboratory using A photons with the sample contained in a Lindeman capillary.
7 The Time of Flight Traces For μ ( hole ) vs. T at constant E For μ ( hole ) vs. E constant T = 129 C
8 T dependence of µ at constant E max > 0.1 cm 2 /Vs at lowest T ~ 6 x 10-3 cm 2 /Vs at highest T E Electric field µ Mobility T Temperature
9 E Electric field µ Mobility T Temperature E dependence of µ at constant T
10 Theory We report here studies of a material that exhibits polaron band behavior Basic Theory by T.Holstein [3] Modified by D.Emin for non-adiabatic transport o deals with the hopping conduction with activated like temperature dependence [4] Modified by R. Silbey and R. Munn for adiabatic transport o deals tunneling-dominated or band-like conduction [5] A general result of polaron band theories is that there is a narrow crossover temperature,t a, between non-adiabatic and adiabatic conduction, with the latter taking over at low T. ( T) H T µ H - Mobility due to hopping conduction µ T - Mobility due to band like conduction Both µ H and µ T are the functions of T, B,,, and g. B - electronic bandwidth - phonon bandwidth - optical charactersitic phonon frequency g - electron-phonon coupling Condition we consider : B, g 1, and For our results: above T a, μ(t) has positive slope below T a, μ(t) typically has negative slope and can exhibit qualitatively exponential behavior. [3] T. Holstein, Ann. of Phys. 8, 343 (1959).[4] D. Emin, Adv. Phys. 24, 305 (1975). [5] R. Silbey and R. Munn, J. Chem. Phys. 72, 2763 (1980).
11 Theory (Continue) ( T) H T T H ea 1 2 B 4 B [ I0( y) 1] exp h 2B 2B ea B 1 2 hi ( ) 1 0 y B = y n = 1/[exp( ) 1] =1/ k B T y = 4 g 2 [n(n+1)] 1/2 k B - Boltzman s constant a - intermolecular distance - modified phonon bandwidth n - phonon distribution function B B exp g 2 tanh 2 The hyperbolic Bessel function I 0 (y) is a sharply increasing function of its argument and therefore of T (y n and n increases with T). 1
12 Results 1. At constant E, decreases with increasing T. 2. At the highest T mesophase (SmF), was 6 x 10-3 cm 2 /Vs, and changed very slowly with T. However, the T - range available was small. 3. As T decreases, there is a sudden increase in at the transition from the SmF to SmG. 4. max was greater than 0.1 cm 2 /Vs at the lowest T [6]. Similar value has been found by K.Oikawa and his group for the related material. 5. The powder diffraction results suggest that the highly ordered high temperature SmF phase templates the formation of ordered crystalline SmG and then SmH [7]. 6. At the transition from SmG to SmH phases, there is no sudden change in the T dependence of. 7. is independent of E over a wide range of field at all accessible T. 8. Electron TOF traces were too dispersive to allow for mobility measurement. [6]K. Oikawa, H. Monobe, J. Takahashi, K. Tsuchiya, B. Heinrich, D. Guillon, and Y. Shimizu, Chem. Commun. p (2005). [7] H.Iino and J.Hanna, Japanese Journal of Applied Physics Vol. 45, No. 33, 2006, pp. L867 L870
13 Conclusions 1. Since the SmF phase templates the formation of crystalline SmG and then SmH, thin samples of a high-mobility crystalline organic may be grown with large-grained structure, which may have implications for device development. 2. Since there is not a distinct change in μ (T) for the transition from SmG to SmH phases, which differ only in the freedom of molecular rotation, the alignment of adjacent molecular cores does not seem to play an important role in the transport. 3. The sizable jump in mobility (a factor of 3.4) at the transition from the SmF to the much more ordered SmG phase, - may be due to decreased dynamic disorder due to the loss of the fluctuations in the SmF phase on cooling. The main difference between SmF and SmG phases is that SmG has stronger correlation between smectic layers than SmF.
14 Conclusions (Continue) 4. This material is of real interest, e.g., thin-film transistor fabrication because of its high mobility at low T. 5. To our knowledge, this is the first SmH material studied, and the first very high mobility smectic with polaron band-like transport. 6. We report here studies of a material that appears to exhibit polaron band behavior. However, while qualitatively consistent with transport via polaron bands, we find that it is quantitatively difficult to explain the data with physically realistic parameters. In particular, the data demand either quite large typical optical phonon frequencies and/or phonon bandwidths. Letting the phonon bandwidth take on a maximal value, say = 0.5, we find that the data may be fit, albeit with = T k B / with T 400 K. h h
15 Thanks Colleague-Mr. Chandra Pokharel Prof. Robert J. Twieg Prof. Satyan Kumar Dr. Shin-Woong Kang Dr. Yulia Getmanenko
A highly-ordered, high mobility organic semiconductor grown from a mesophase: A test of polaron band theory. Abstract
A highly-ordered, high mobility organic semiconductor grown from a mesophase: A test of polaron band theory Naresh Shakya, Chandra Pokhrel, Brett Ellman, Shin-Woong Kang, and Satyendra Kumar Department
More informationTHE STUDY OF CHARGE CARRIER TRANSPORT ON THE CALAMITIC LIQUID CRYSTALS 5, 5 -DI-(ALKYL-PYRIDIN-YL) - 2 BITHIOPHENES. Abstract
Presented on Gordon Research Conference on Liquid Crystals, June 14-19, 2009, Colby-Sawyer College, New London, NH, USA THE STUDY OF CHARGE CARRIER TRANSPORT ON THE CALAMITIC LIQUID CRYSTALS 5, 5 -DI-(ALKYL-PYRIDIN-YL)
More informationThe Study of Charge Carrier Transports in the Calamitic Liquid Crystals 5, 5 -di-(decyl-pyridin-yl) - 2 Bithiophene.
The Study of Charge Carrier Transports in the Calamitic Liquid Crystals 5, 5 -di-(decyl-pyridin-yl) - 2 Bithiophene Naresh Shakya * C. Pokhrel* and B. Ellman* Y. Getmanenko** and R. J. Twieg** *Department
More informationCharacterization of electric charge carrier transport in organic semiconductors by time-of-flight technique
Characterization of electric charge carrier transport in organic semiconductors by time-of-flight technique Raveendra Babu Penumala Mentor: Prof. dr. Gvido Bratina Laboratory of Organic Matter Physics
More informationSemiconductor Polymer
Semiconductor Polymer Organic Semiconductor for Flexible Electronics Introduction: An organic semiconductor is an organic compound that possesses similar properties to inorganic semiconductors with hole
More informationFlexible Organic Photovoltaics Employ laser produced metal nanoparticles into the absorption layer 1. An Introduction
Flexible Organic Photovoltaics Employ laser produced metal nanoparticles into the absorption layer 1. An Introduction Among the renewable energy sources that are called to satisfy the continuously increased
More informationTriplet state diffusion in organometallic and organic semiconductors
Triplet state diffusion in organometallic and organic semiconductors Prof. Anna Köhler Experimental Physik II University of Bayreuth Germany From materials properties To device applications Organic semiconductors
More informationPlastic Electronics. Joaquim Puigdollers.
Plastic Electronics Joaquim Puigdollers Joaquim.puigdollers@upc.edu Nobel Prize Chemistry 2000 Origins Technological Interest First products.. MONOCROMATIC PHILIPS Today Future Technological interest Low
More informationSupporting Information
Electronic Supplementary Material (ESI) for Physical Chemistry Chemical Physics. This journal is the Owner Societies 2016 Supporting Information to True ferroelectric switching in thin films of trialkylbenzene-1,3,5-tricarboxamide
More informationSupplementary Figure 1. A photographic image of directionally grown perovskite films on a glass substrate (size: cm).
Supplementary Figure 1. A photographic image of directionally grown perovskite films on a glass substrate (size: 1.5 4.5 cm). 1 Supplementary Figure 2. Optical microscope images of MAPbI 3 films formed
More informationElectro-conductive properties of cadmium octanoate composites with CdS nanoparticles
PACS 81.07.-b, 81.16.-c Electro-conductive properties of cadmium octanoate composites with CdS nanoparticles D.S. Zhulay 1, D.V. Fedorenko 1, A.V. Koval chuk 2, S.A. Bugaychuk 1, G.V. Klimusheva 1, T.A.
More informationCharge transport in Disordered Organic Semiconductors. Eduard Meijer Dago de Leeuw Erik van Veenendaal Teun Klapwijk
Charge transport in Disordered Organic Semiconductors Eduard Meijer Dago de Leeuw Erik van Veenendaal eun Klapwijk Outline Introduction: Ordered vs. Disordered semiconductors he field-effect transistor
More informationORGANIC SEMICONDUCTOR 3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA)
ORGANIC SEMICONDUCTOR 3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA) Suvranta Tripathy Department of Physics University of Cincinnati Cincinnati, Ohio 45221 March 8, 2002 Abstract In the last decade
More informationSurface Transfer Doping of Diamond by Organic Molecules
Surface Transfer Doping of Diamond by Organic Molecules Qi Dongchen Department of Physics National University of Singapore Supervisor: Prof. Andrew T. S. Wee Dr. Gao Xingyu Scope of presentation Overview
More informationCME 300 Properties of Materials. ANSWERS: Homework 9 November 26, As atoms approach each other in the solid state the quantized energy states:
CME 300 Properties of Materials ANSWERS: Homework 9 November 26, 2011 As atoms approach each other in the solid state the quantized energy states: are split. This splitting is associated with the wave
More informationSupporting Information
Supporting Information Fluorination of Metal Phthalocyanines: Single-Crystal Growth, Efficient N-Channel Organic Field-Effect Transistors, and Structure- Property Relationships Hui Jiang 1*, Jun Ye 2,
More informationHigh speed vacuum deposition of organic TFTs in a roll-to-roll facility
High speed vacuum deposition of organic TFTs in a roll-to-roll facility Dr Hazel Assender University of Oxford 1 Prof Martin Taylor Eifion Patchett, Aled Williams Prof Long Lin Prof Steve Yeates Dr John
More informationChapter 3 Chapter 4 Chapter 5
Preamble In recent years bismuth-based, layer-structured perovskites such as SrBi 2 Nb 2 O 9 (SBN) and SrBi 2 Ta 2 O 9 (SBT) have been investigated extensively, because of their potential use in ferroelectric
More informationElectro-optic measurement of carrier mobility in an. organic thin-film transistor
Electro-optic measurement of carrier mobility in an organic thin-film transistor E.G. Bittle and J.W. Brill Department of Physics and Astronomy, University of Kentucky, Lexington, KY 40506-0055, USA J.E.
More informationOPTI510R: Photonics. Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626
OPTI510R: Photonics Khanh Kieu College of Optical Sciences, University of Arizona kkieu@optics.arizona.edu Meinel building R.626 Announcements Homework #6 is assigned, due May 1 st Final exam May 8, 10:30-12:30pm
More information6.5 mm. ε = 1%, r = 9.4 mm. ε = 3%, r = 3.1 mm
Supplementary Information Supplementary Figures Gold wires Substrate Compression holder 6.5 mm Supplementary Figure 1 Picture of the compression holder. 6.5 mm ε = 0% ε = 1%, r = 9.4 mm ε = 2%, r = 4.7
More informationSpring Semester 2012 Final Exam
Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters
More informationSupporting Information
Supporting Information Oh et al. 10.1073/pnas.0811923106 SI Text Hysteresis of BPE-PTCDI MW-TFTs. Fig. S9 represents bidirectional transfer plots at V DS 100VinN 2 atmosphere for transistors constructed
More informationIntroducing the RoVaCBE Flagship project: Roll-to-roll Vacuum-processed Carbon Based Electronics. Dr Hazel Assender, University of Oxford
Introducing the RoVaCBE Flagship project: Roll-to-roll Vacuum-processed Carbon Based Electronics Dr Hazel Assender, University of Oxford DALMATIAN TECHNOLOGY 21 st Sept 2010 1 Organic electronics Opportunity
More informationSwanning about in Reciprocal Space. Kenneth, what is the wavevector?
Swanning about in Reciprocal Space or, Kenneth, what is the wavevector? Stanford Synchrotron Radiation Laboratory Principles The relationship between the reciprocal lattice vector and the wave vector is
More informationCHM 6365 Chimie supramoléculaire Partie 8
CHM 6365 Chimie supramoléculaire Partie 8 Liquid crystals: Fourth state of matter Discovered in 1888 by Reinitzer, who observed two melting points for a series of cholesterol derivatives Subsequent studies
More informationSupplementary Figure 1. Crystal packing of pentacene.
t 3 t 4 t 1 t 2 Supplementary Figure 1. Crystal packing of pentacene. The largestholecharge transfer integrals are shown in red:t 1 = 75 mev, t 2 = 32 mev, t 3 = 20 mev, t 4 = 6 mev. Note that IRactive
More informationSemiconductor Nanocrystals from Nonthermal Plasmas. Rebecca J. Anthony University of Minnesota
Semiconductor Nanocrystals from Nonthermal Plasmas Rebecca J. Anthony University of Minnesota 1 Nanocrystals in devices efficient light emitters and absorbers versatile deposition schemes possibility for
More informationOpto-electronic Characterization of Perovskite Thin Films & Solar Cells
Opto-electronic Characterization of Perovskite Thin Films & Solar Cells Arman Mahboubi Soufiani Supervisors: Prof. Martin Green Prof. Gavin Conibeer Dr. Anita Ho-Baillie Dr. Murad Tayebjee 22 nd June 2017
More informationPhysics of Semiconductor Devices. Unit 2: Revision of Semiconductor Band Theory
Physics of Semiconductor Devices Unit : Revision of Semiconductor Band Theory Unit Revision of Semiconductor Band Theory Contents Introduction... 5 Learning outcomes... 5 The Effective Mass... 6 Electrons
More informationelectronics fundamentals
electronics fundamentals circuits, devices, and applications THOMAS L. FLOYD DAVID M. BUCHLA Lesson 1: Diodes and Applications Semiconductors Figure 1-1 The Bohr model of an atom showing electrons in orbits
More informationInitial Stages of Growth of Organic Semiconductors on Graphene
Initial Stages of Growth of Organic Semiconductors on Graphene Presented by: Manisha Chhikara Supervisor: Prof. Dr. Gvido Bratina University of Nova Gorica Outline Introduction to Graphene Fabrication
More informationPH575 Spring Lecture #20 Semiconductors: optical properties: Kittel Ch. 8 pp ; Ch 15 pp
PH575 Spring 2014 Lecture #20 Semiconductors: optical properties: Kittel Ch. 8 pp. 187-191; Ch 15 pp. 435-444 Figure VI-1-1: Different types of optical absorption phenomena; (1) transitions of highlying
More informationSupplementary Figures:
Supplementary Figures: dcdtbt vibration spectrum: Ground state blue vs Cation state red Intensity a.u. 1000 1100 1200 1300 1400 1500 1600 1700 Frequency cm^1 dcdtbt vibration spectrum: Ground state blue
More informationHalbleiter. Prof. Yong Lei. Prof. Thomas Hannappel.
Halbleiter Prof. Yong Lei Prof. Thomas Hannappel yong.lei@tu-ilemnau.de thomas.hannappel@tu-ilmenau.de Important Events in Semiconductors History 1833 Michael Faraday discovered temperature-dependent conductivity
More informationChapter 1 Introduction
Since application of thermotropic liquid crystals has always been of wide interest, discovery of bent-shaped (banana, boomerang, bow) liquid crystals [1] opened a very promising field concerning new mesophases.
More informationOrganic Molecular Solids
Markus Schwoerer, Hans Christoph Wolf Organic Molecular Solids BICENTENNIAL BICENTENNIAL WILEY-VCH Verlag GmbH & Co. KGaA VII Contents 1 Introduction 1 1.1 What are Organic Solids? 1 1.2 What are the Special
More informationSupplementary Figures
Supplementary Figures Supplementary Figure S1. The effect of window size. The phonon MFP spectrum of intrinsic c-si (T=300 K) is shown for 7-point, 13-point, and 19-point windows. Increasing the window
More informationThe molecules that will be studied with this device will have an overall charge of
The Basics of the Rotation of Polarized Light The molecules that will be studied with this device will have an overall charge of zero but will have localized polarities that can be used to orient the molecule.
More information(a) (b) Supplementary Figure 1. (a) (b) (a) Supplementary Figure 2. (a) (b) (c) (d) (e)
(a) (b) Supplementary Figure 1. (a) An AFM image of the device after the formation of the contact electrodes and the top gate dielectric Al 2 O 3. (b) A line scan performed along the white dashed line
More informationChapter 6 ELECTRICAL CONDUCTIVITY ANALYSIS
Chapter 6 ELECTRICAL CONDUCTIVITY ANALYSIS CHAPTER-6 6.1 Introduction The suitability and potentiality of a material for device applications can be determined from the frequency and temperature response
More informationMeasuring the Effects of Ion Implantation on the Photoinduced Carrier Lifetime of Semiconductor Materials
Measuring the Effects of Ion Implantation on the Photoinduced Carrier Lifetime of Semiconductor Materials Mario Johnson (Southern University and A&M College, Baton Rouge, LA 70813) Tony Clevenger and Stephen
More informationA comprehensive study of the effect of reactive end groups on the charge carrier transport within polymerized and nonpolymerized liquid crystals
JOURNAL OF APPLIED PHYSICS 101, 023713 2007 A comprehensive study of the effect of reactive end groups on the charge carrier transport within polymerized and nonpolymerized liquid crystals R. J. Baldwin
More informationSemiconductor Detectors
Semiconductor Detectors Summary of Last Lecture Band structure in Solids: Conduction band Conduction band thermal conductivity: E g > 5 ev Valence band Insulator Charge carrier in conductor: e - Charge
More informationElectrons are shared in covalent bonds between atoms of Si. A bound electron has the lowest energy state.
Photovoltaics Basic Steps the generation of light-generated carriers; the collection of the light-generated carriers to generate a current; the generation of a large voltage across the solar cell; and
More informationTransient Photocurrent Measurements of Graphene Related Materials
Transient Photocurrent Measurements of Graphene Related Materials P. Srinivasa Rao Mentor: Prof. dr. Gvido Bratina Laboratory of Organic Matter Physics University of Nova Gorica 1 Contents: 1. Electrical
More informationFrom Last Time. Several important conceptual aspects of quantum mechanics Indistinguishability. Symmetry
From Last Time Several important conceptual aspects of quantum mechanics Indistinguishability particles are absolutely identical Leads to Pauli exclusion principle (one Fermion / quantum state). Symmetry
More informationAnalysis of Carrier Generation by Photon Absorption in Semiconductor Silicon
Science Journal of Physics ISSN: 2276-6367 http://www.sjpub.org/sjp.html Author(s) 2012. CC Attribution 3.0 License. Published By Science Journal Publication International Open Access Publisher Research
More informationEE143 Fall 2016 Microfabrication Technologies. Evolution of Devices
EE143 Fall 2016 Microfabrication Technologies Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1-1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) 1-2 1 Why
More informationSemiconductor. Byungwoo Park. Department of Materials Science and Engineering Seoul National University.
Semiconductor Byungwoo Park Department of Materials Science and Engineering Seoul National University http://bp.snu.ac.kr http://bp.snu.ac.kr Semiconductors Kittel, Solid State Physics (Chapters 7 and
More informationSolid State Device Fundamentals
Solid State Device Fundamentals ENS 345 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 Office 4N101b 1 Outline - Goals of the course. What is electronic device?
More informationUnit IV Semiconductors Engineering Physics
Introduction A semiconductor is a material that has a resistivity lies between that of a conductor and an insulator. The conductivity of a semiconductor material can be varied under an external electrical
More informationTemperature Dependent Optical Band Gap Measurements of III-V films by Low Temperature Photoluminescence Spectroscopy
Temperature Dependent Optical Band Gap Measurements of III-V films by Low Temperature Photoluminescence Spectroscopy Linda M. Casson, Francis Ndi and Eric Teboul HORIBA Scientific, 3880 Park Avenue, Edison,
More informationSemiconductor Physics and Devices Chapter 3.
Introduction to the Quantum Theory of Solids We applied quantum mechanics and Schrödinger s equation to determine the behavior of electrons in a potential. Important findings Semiconductor Physics and
More informationSemiconductors and Optoelectronics. Today Semiconductors Acoustics. Tomorrow Come to CH325 Exercises Tours
Semiconductors and Optoelectronics Advanced Physics Lab, PHYS 3600 Don Heiman, Northeastern University, 2017 Today Semiconductors Acoustics Tomorrow Come to CH325 Exercises Tours Semiconductors and Optoelectronics
More informationSUPPLEMENTARY INFORMATION
In the format provided by the authors and unedited. DOI: 1.138/NMAT4927 Dopant Compensation in Alloyed CH 3 NH 3 PbBr 3-x Cl x Perovskite Single Crystals for Gamma-ray Spectroscopy Haotong Wei 1, Dylan
More informationCarrier Transport Mechanisms of a-gaas/ n-si Heterojunctions
Egypt. J. Sol., Vol. (24), No. (2), (2001) 245 Carrier Transport Mechanisms of a-gaas/ n-si Heterojunctions N.I.Aly, A.A.Akl, A.A.Ibrahim, and A.S.Riad Department of Physics, Faculty of Science, Minia
More informationSolids. properties & structure
Solids properties & structure Determining Crystal Structure crystalline solids have a very regular geometric arrangement of their particles the arrangement of the particles and distances between them is
More informationChapter 12: Electrical Properties. RA l
Charge carriers and conduction: Chapter 12: Electrical Properties Charge carriers include all species capable of transporting electrical charge, including electrons, ions, and electron holes. The latter
More informationSupporting Information for
Supporting Information for Molecular Rectification in Conjugated Block Copolymer Photovoltaics Christopher Grieco 1, Melissa P. Aplan 2, Adam Rimshaw 1, Youngmin Lee 2, Thinh P. Le 2, Wenlin Zhang 2, Qing
More informationSupplementary Information for. Effect of Ag nanoparticle concentration on the electrical and
Supplementary Information for Effect of Ag nanoparticle concentration on the electrical and ferroelectric properties of Ag/P(VDF-TrFE) composite films Haemin Paik 1,2, Yoon-Young Choi 3, Seungbum Hong
More informationContents. Foreword by Darrell H. Reneker
Table of Foreword by Darrell H. Reneker Preface page xi xiii 1 Introduction 1 1.1 How big is a nanometer? 1 1.2 What is nanotechnology? 1 1.3 Historical development of nanotechnology 2 1.4 Classification
More informationTemperature ( o C)
Viscosity (Pa sec) Supplementary Information 10 8 10 6 10 4 10 2 150 200 250 300 Temperature ( o C) Supplementary Figure 1 Viscosity of fibre components (PC cladding blue; As 2 Se 5 red; CPE black) as
More informationPhysicists in the Semiconductor Industry
Physicists in the Semiconductor Industry P.M. Mooney IBM Research Division, T.J. Watson Research Center Yorktown Heights, NY 10598 APS March Meeting March 24, 2004 Thomas J. Watson Research Center 1 Outline
More informationLecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations
Lecture 1 OUTLINE Basic Semiconductor Physics Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Reading: Chapter 2.1 EE105 Fall 2007 Lecture 1, Slide 1 What is a Semiconductor? Low
More informationHomework Week 3: Nanoscale and macroscale characterization Thermoelectricity: From Atoms to Systems
Homework Week 3: Nanoscale and macroscale characterization Thermoelectricity: From Atoms to Systems Je-Hyeong Bahk and Ali Shakouri nanohub-u Fall 2013 Answer the thirteen questions including all the sub-questions
More informationEffect of Structural Order on the Dark Current and Photocurrent in Zinc Octakisfl-decoxyethy1)porphyrin Thin-Layer Cells
7632 J. Phys. Chem. 1995,99, 7632-7636 Effect of Structural Order on the Dark Current and Photocurrent in Zinc Octakisfl-decoxyethy1)porphyrin Thin-Layer Cells Chong-Yang Liu, Homg-Long Pan, Huajun Tang,
More informationChap. 1 (Introduction), Chap. 2 (Components and Circuits)
CHEM 455 The class describes the principles and applications of modern analytical instruments. Emphasis is placed upon the theoretical basis of each type of instrument, its optimal area of application,
More informationBF 3 -doped polyaniline: A novel conducting polymer
PRAMANA c Indian Academy of Sciences Vol. 67, No. 1 journal of July 2006 physics pp. 135 139 BF 3 -doped polyaniline: A novel conducting polymer DEBANGSHU CHAUDHURI and D D SARMA Solid State and Structural
More informationAnalysis of charge-transport properties in GST materials for next generation phase-change memory devices. Fabio Giovanardi Tutor: Prof.
Analysis of charge-transport properties in GST materials for next generation phase-change memory devices Fabio Giovanardi Tutor: Prof. Massimo Rudan The use of phase-change chalcogenide alloy films to
More informationSemiconductor device structures are traditionally divided into homojunction devices
0. Introduction: Semiconductor device structures are traditionally divided into homojunction devices (devices consisting of only one type of semiconductor material) and heterojunction devices (consisting
More informationChapter Two. Energy Bands and Effective Mass
Chapter Two Energy Bands and Effective Mass Energy Bands Formation At Low Temperature At Room Temperature Valence Band Insulators Metals Effective Mass Energy-Momentum Diagrams Direct and Indirect Semiconduction
More informationEECS143 Microfabrication Technology
EECS143 Microfabrication Technology Professor Ali Javey Introduction to Materials Lecture 1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) Why Semiconductors? Conductors e.g
More informationSupplementary Figures
Supplementary Figures Supplementary Figure. X-ray diffraction pattern of CH 3 NH 3 PbI 3 film. Strong reflections of the () family of planes is characteristics of the preferred orientation of the perovskite
More informationChapter 4: Bonding in Solids and Electronic Properties. Free electron theory
Chapter 4: Bonding in Solids and Electronic Properties Free electron theory Consider free electrons in a metal an electron gas. regards a metal as a box in which electrons are free to move. assumes nuclei
More informationSupporting Information Available:
Supporting Information Available: Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS 2 Nanoflakes Nengjie Huo 1, Shengxue Yang 1, Zhongming Wei 2, Shu-Shen Li 1, Jian-Bai Xia
More informationA. Optimizing the growth conditions of large-scale graphene films
1 A. Optimizing the growth conditions of large-scale graphene films Figure S1. Optical microscope images of graphene films transferred on 300 nm SiO 2 /Si substrates. a, Images of the graphene films grown
More informationMIT Amorphous Materials
MIT 3.071 Amorphous Materials 10: Electrical and Transport Properties Juejun (JJ) Hu 1 After-class reading list Fundamentals of Inorganic Glasses Ch. 14, Ch. 16 Introduction to Glass Science and Technology
More informationJ. Price, 1,2 Y. Q. An, 1 M. C. Downer 1 1 The university of Texas at Austin, Department of Physics, Austin, TX
Understanding process-dependent oxygen vacancies in thin HfO 2 /SiO 2 stacked-films on Si (100) via competing electron-hole injection dynamic contributions to second harmonic generation. J. Price, 1,2
More informationECE 340 Lecture 39 : MOS Capacitor II
ECE 340 Lecture 39 : MOS Capacitor II Class Outline: Effects of Real Surfaces Threshold Voltage MOS Capacitance-Voltage Analysis Things you should know when you leave Key Questions What are the effects
More informationFabrication of field-effect transistor device with higher fullerene, C 88
Physics Physics fields Okayama University Year 2005 Fabrication of field-effect transistor device with higher fullerene, C 88 Takayuki Nagano Hiroyuki Sugiyama Eiji Kuwahara Rie Watanabe Haruka Kusai Yoko
More informationType of material Numbers of FREE electrons Resitsivity/ resitance Insulator LOW HIGH Semi-Conductor MEDIUM MEDIUM Conductor HIGH LOW
9.4.3 2 (i) Identify that some electrons in solids are shared between atoms and move freely There are three main ways in which matter is held together. They all involve the valence or outer shell electrons.
More information2D MBE Activities in Sheffield. I. Farrer, J. Heffernan Electronic and Electrical Engineering The University of Sheffield
2D MBE Activities in Sheffield I. Farrer, J. Heffernan Electronic and Electrical Engineering The University of Sheffield Outline Motivation Van der Waals crystals The Transition Metal Di-Chalcogenides
More informationImpedance Analysis and Low-Frequency Dispersion Behavior of Bi 4 Ti 3 O 12 Glass
Journal of the Korean Physical Society, Vol. 56, No. 1, January 2010, pp. 462 466 Impedance Analysis and Low-Frequency Dispersion Behavior of Bi 4 Ti 3 O 12 Glass C. H. Song, M. Kim, S. M. Lee, H. W. Choi
More informationSupplementary Figure 1 Scheme image of GIXD set-up. The scheme image of slot die
Supplementary Figure 1 Scheme image of GIXD set-up. The scheme image of slot die printing system combined with grazing incidence X-ray diffraction (GIXD) set-up. 1 Supplementary Figure 2 2D GIXD images
More informationET3034TUx Utilization of band gap energy
ET3034TUx - 3.3.1 - Utilization of band gap energy In the last two weeks we have discussed the working principle of a solar cell and the external parameters that define the performance of a solar cell.
More informationSUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION doi:10.1038/nature10683 Supplementary Methods and Discussion: Possibility of Toluene Inclusion in Unit Cell: The unit cell calculations show modest, non-systematic cell volume
More informationINFLUENCES OF AIR, NITROGEN, AND OXYGEN ON THE PHOTOCONDUCTIVITY OF ORGANIC TRIMETHYL PHENYL DIAMINE THIN FILM
INFLUENCES OF AIR, NITROGEN, AND OXYGEN ON THE PHOTOCONDUCTIVITY OF ORGANIC TRIMETHYL PHENYL DIAMINE THIN FILM Nazrul Anuar Nayan Dept. of Electric, Electronic and System Engineering Faculty of Engineering
More informationOrganic Device Simulation Using Silvaco Software. Silvaco Taiwan September 2005
Organic Device Simulation Using Silvaco Software Silvaco Taiwan September 2005 Organic Devices Simulation: Contents Introduction Silvaco TCAD Simulator Theory Models OTFT Simulation v.s Measurement OLED
More informationCrystal Properties. MS415 Lec. 2. High performance, high current. ZnO. GaN
Crystal Properties Crystal Lattices: Periodic arrangement of atoms Repeated unit cells (solid-state) Stuffing atoms into unit cells Determine mechanical & electrical properties High performance, high current
More informationHighly Efficient and Anomalous Charge Transfer in van der Waals Trilayer Semiconductors
Highly Efficient and Anomalous Charge Transfer in van der Waals Trilayer Semiconductors Frank Ceballos 1, Ming-Gang Ju 2 Samuel D. Lane 1, Xiao Cheng Zeng 2 & Hui Zhao 1 1 Department of Physics and Astronomy,
More informationTwo-Dimensional CH 3 NH 3 PbI 3 Perovskite: Synthesis and Optoelectronic Application
Two-Dimensional CH 3 NH 3 PbI 3 Perovskite: Synthesis and Optoelectronic Application Jingying Liu,, Yunzhou Xue,,, Ziyu Wang,, Zai-Quan Xu, Changxi Zheng, Bent Weber, Jingchao Song, Yusheng Wang, Yuerui
More informationOrganic solar cells. State of the art and outlooks. Gilles Horowitz LPICM, UMR7647 CNRS - Ecole Polytechnique
Organic solar cells. State of the art and outlooks Gilles Horowitz LPICM, UMR7647 CNRS - Ecole Polytechnique Solar energy Solar energy on earth: 75,000 tep/year 6000 times the world consumption in 2007
More informationSolid State Device Fundamentals
Solid State Device Fundamentals ENS 345 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 Office 4N101b 1 Outline - Goals of the course. What is electronic device?
More informationChapter 4 Scintillation Detectors
Med Phys 4RA3, 4RB3/6R03 Radioisotopes and Radiation Methodology 4-1 4.1. Basic principle of the scintillator Chapter 4 Scintillation Detectors Scintillator Light sensor Ionizing radiation Light (visible,
More informationLEC E T C U T R U E R E 17 -Photodetectors
LECTURE 17 -Photodetectors Topics to be covered Photodetectors PIN photodiode Avalanche Photodiode Photodetectors Principle of the p-n junction Photodiode A generic photodiode. Photodetectors Principle
More informationSemiconductor Nanowires: Motivation
Semiconductor Nanowires: Motivation Patterning into sub 50 nm range is difficult with optical lithography. Self-organized growth of nanowires enables 2D confinement of carriers with large splitting of
More informationStanford University MatSci 152: Principles of Electronic Materials and Devices Spring Quarter, Final Exam, June 8, 2010
Stanford University MatSci 152: Principles of Electronic Materials and Devices Spring Quarter, 2009-2010 Final Exam, June 8, 2010 This is a closed book, closed notes exam. You are allowed two double-sided
More informationSuperconducting Single-photon Detectors
: Quantum Cryptography Superconducting Single-photon Detectors Hiroyuki Shibata Abstract This article describes the fabrication and properties of a single-photon detector made of a superconducting NbN
More informationElectroluminescence from Silicon and Germanium Nanostructures
Electroluminescence from silicon Silicon Getnet M. and Ghoshal S.K 35 ORIGINAL ARTICLE Electroluminescence from Silicon and Germanium Nanostructures Getnet Melese* and Ghoshal S. K.** Abstract Silicon
More information