Bound small hole polarons in oxides and related materials: strong colorations and high ionization energies

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1 Bound small hole polarons in oxides and related materials: strong colorations and high ionization energies O. F. Schirmer Universität Osnabrück

3 central example: acceptor Li + Zn in ZnO

4 O O 2

5 Small polaron: carrier localized at one of several equivalent sites here: hole polaron bound to acceptor o Large polaron: usually delocalized over many equivalent sites Localization by short range carrier lattice coupling o Coupling by long range Coulomb interaction (Fröhlichcoupling) Transport from a site to a neighbouring one by thermally activatedhopping (incoherent) o Transport by coherent bandlike tunneling

6 Evidence by: 1) Paramagnetic resonance of unpaired spins: 2) Typical optical absorption: 3) Theoretical reproduction of structure t and energy levels: l

7 Carriers are provided by: 1) doping 2) optical irradiation

8 Summarizing overviews: O. F. Schirmer, J. Phys.: Condens. Matter 18, R667 (2006) and J. Phys.: Condens. Matter 23, (2011)

9 Menu: 1) Formation of small polarons, their optical absorptions and their energies of ionization 2) Basic features of the theoretical reproduction of bound small polarons 3) Luminescence accompanying recombination with bound small polarons 4) E l f b d ll l i i d t 4) Examples of bound small polarons in semiconductor (high gap) materials

10 Bound small polarons: Typical features of their optical absorptions their energies of ionization

11 Optical absorption Most simple example: 2 equivalent sites (localization of a hole at one of 2 equivalent sites)

13 H = J VQ KQ operating on R L H 2 VQ + KQ J J VQ + KQ = 2 2 E P = V / 4K minimal energy at Q = V / 2K min ±

14 Optical absorption: O O 2 charge transfer under Franck Condon conditions α( ω) ( J 2 d 2 hω) exp( w( hω 4 E p ) 2 ) w = 1 0 /(8E p hω ) a) highoscillator strength b) largest possible width of an absorption band for given peak energy. c) characteristic fingerprint, indep. of E P : W 2 /M = ln 2 * 8 E P * o / 4 E P ~ 014eV 0.14 hω d) width of the zero phonon band : hω 2J * exp( 4 E P / o )

15 2 well small polaron absorption

16 Tetrahedral symmetry: ZnO:Li, BeO:Li y y J J J KQ VQ = J KQ VQ J J J J KQ VQ J J J J KQ VQ H operating on KQ VQ J J J Q Q

17 2 α ( Jd ) / ω exp( w( hω 8/ 3E p + J ) α ( Jd ) 2 / ω exp( w( hω 8/ 3E 1 w = p 2 2J ) ( 16 / 3) E p hω 0 ) 2 )

18 J = 0.18 ev, E P = 1.18 ev, W 2 /M = 0.17 ev

19 Energy of ionization, E th : Contributions to energy of carrier: 1) Stabilization by lattice distortion, parameter E P 2) Stabilization by Coulomb potential of acceptor, parameter E d 3) Destabilization by rise of kinetic energy, typically W/2

20 lattice distortion, parameter E P Coulomb potential of acceptor, parameter E d rise of kineticenergy, energy typicallyw/2 E th = E P + E d W b /2 E opt = 8/3 E P + aj

21 Concerning the theoretical treatment of bound small polarons: structure and energy levels ZnO:Li Zn ~ eV ev DFT (LDA) S. Lany (2011)

23 In order to calculate the properties of a bound polaron the environment of the binding defect, consisting of hundreds of ions, must be included. This implies a corresponding highh number of electrons. This Many Electron Problem can be tackled by using density functional theory (DFT) (W. Kohn, Nobel prize 1998). For instance, the energy is described as a functional of the electron density: E[ρ] = T[ρ] + V[ρ] + E xc [ρ] +.. ρ = ρ i + ρ j +. V[ρ] = 1/(dist. bet. each two elec.) (.. ρ i + ρ j +. )(.ρ ρ i + ρ j +.) d(all. elec.) Coulomb interaction of the electrons; contains also the self interaction of single electrons, e.g. ρ i ρ i.

24 This is not correct physically: there is no self interaction. Consequence: The electron electron repulsion is underestimated. Therefore it costs less energy to put an additional electron into the system, as compared to the correct description. The energy distance to the excited states is too low: If the next higher state is not populated, this corresponds to a hole with a low ionization energy. Since recently there are tricks by which the compensation of the erroneous selfinteraction can be described exactly. One adds a repulsive additional potential, which strongly raises energy ofnext electron. A hole, captured in the corresponding level, then has a high ionization energy with respect to the occupied states.

25 Since the hole is expected to be localized at an O 2 ion, the electron potential at this ion is raised correspondingly: gy Thisraises the ionization energy of the hole. The strength of the potential is not arbitrary, however. The parameter λ hs is chosen in such a way, that all effects ofself interaction are removed. This leads to exact solution of the problem. In addition there are a series of approximation procedures, which have a good predictive power. R l h l l li d O Mi i i i Result: hole localized as O. Minimization of energy also with respect to lattice distortion yields polaronic state and ionization energy.

26 Luminescence: recombination of electron with bound polaron So far: Transitions within hole polaron system with fixed charge state (Li Zn0 (h)). When recombining with an electron the charge state changes : (e + h). What is the corresponding complete level scheme?

28 ZnO:Cu 2+ ZnO:Li E max = 1.95 ev D. Zwingel, J. Luminescence (1972) E max = E gap 2 E ion E ion ~ 0.7 ev

29 Examples of bound small polarons in semiconductor (or insulating) materials: Identification by: EPR Optical absorption Theoretical simulation

30 Oxides acceptor defects binding small hole polarons: Tetrahedral coordination (4 O neighbors) ZnO Li Zn Na Zn V Zn N O BeO Li Be V Be SiO 2 Al Si Ge Si Bi 12 MO 20 (M = Ti or Si or Ge) Bi M (antisite defect)

31 ZnO:Li Zn E ionization = 0.64 ev (Lany 2009)

32 ZnO:Na Zn E ion = 0.79 ev (Lany 2009) ZnO:V Zn E ion = 0.95 ev (Chan, Lany, Zunger 2009) ZnO:N O E ion = 1.62 ev (Lany 2011)

33 SiO 2 : Al (smokyquartz) Gillen, Robertson 2012 E ion = 25eV 2.5 E i

34 For comparison: oxygen vacancy, V O, in ZnO Clark et al Electron(s): widely extended (no smallpolaron)

35 Further example for tetrahedral coordination Bi 12 TiO 20 Bi Ti

36 Oxides Octahedral coordination (6 O neighbors): MgO Li Mg Na Mg V Mg CaO Li Ca SrO Li Sr LiNbO 3 Al 2 O 3 V Li Mg Al CeO 2 Cu 2 O La Ce V Cu

37 oxides perovskites BaTiO 3 : Na Ba, Ca Ti SrTiO 3 : Fe Ti Al Ti CaTiO 3 : V ti LaMnO 3 : Sr La

38 Tellurides, selenides, sulfides: Tetrahedral coordination ZnTe, ZnSe: V Zn Nitrides Tetrahedral coordination GaN: Mg Ga, Be Ga, Zn Ga Ga Ga Ga

39 GaN:Mg deep: E ion = 0.18 ev (Lany, Zunger 2010) polaronic responsible for blue luminescence of GaN (LED!!) GaN:Mg shallow: E ion = 0.15 ev (Lany, Zunger 2010)

40 deep shallow GaN:Be 0.45eV 0.15eV (Lany, Zunger 2010) GaN:Zn 0.32 ev 0.25 ev (Lany, Zunger 2010)

41 Bound small O polaron also in topaz:

42 Summary: Small (hole) polarons bound to acceptor defects are often found in semiconductor (or high gap) materials. Such polarons are characterized by intense wide absorption and luminescence bands with maxima in the visible spectral range. The interaction with the lattice is rather strong; E P (typ.) ~ 1 ev This implies high ionization energies and low p conductivity Reliableab initio predictions of the features of bound small polarons have become possible recently

45 Holes self trapped, without attraction by acceptor: Theory: van de Walle et al. (Phys. Rev. B 85, (2012)) TiO 2 Al 2 O 3 Ga 2 O 3 In 2 O 3 a SiO 2 O hole small polaron, self trapped No self trapped holes in ZnO, cryst SiO 2

Electrons, Holes, and Defect ionization

Electrons, Holes, and Defect ionization The process of forming intrinsic electron-hole pairs is excitation a cross the band gap ( formation energy ). intrinsic electronic reaction : null e + h When electrons