elektronskih komponent Prosojnice za predavanja 4.UNI/RS Pripravil: izr.prof.dr.miha Mraz
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1 3. Določanje zanesljivosti elektronskih Prosojnice za predavanja 4.UNI/RS Pripravil: izr.prof.dr.miha Mraz Šol.leto: l 2010/2011
2 3.1. Uvod Temeljni cilj: določitev intenzivnosti odpovedovanja in s tem posredno izračun zanesljivostni večjih digitaliziranih elektronskih ee to sklopov; λ, i i R sys ( t ) n = 1,..., n : λsys = i= 1 = e Elektronske e > konstantna λ Otl Ostale e (ventilatorji, t vzmeti, konektorji) > linearno rastoča λ R sys ( t ) = R electronical ( t)* R mechanical ( t ) Vpliv (tudi večplastne) tiskanine je zanemarljiv λ sys * t λ i 2
3 Temeljni problem: Kako pridobiti množico različnih λ i : Podatke zagotovi proizvajalec/prodajalec e (običajno nemogoče); Spremljanje j podatkov s terena (nezanesljivo, z zamikom, časovno potratno) Podatke pridobimo s pospešenim staranjem (časovno potratno, drago, potrebno znanje) j) Podatke pridobimo na osnovi predikcijskih standardov (najhitreje in ceneno) Obstoječi č velikostni lk razredi za posamezne elektronske lk k e: l.1991: 1 odpoved / 10 6 delovnih ur l.2009: 1 odpoved / 10 9 delovnih ur (1 FIT) 3
4 3.2. Osnove postopkov pospešenega staranja in določanja življenske dobe Pi Primarni icilj: pospešena degradacija d procesov staranja materialov Vrste (stresnih) staralnih testov: Temperaturni, Vibracijski, Vlažnostni, Sevalni, Kombinirani. Nameni testov pospešenega staranja: Določitev intenzivnosti odpovedovanja λ i, Identifikacija šibkih točk dizajna Med testiranjem mora sistem vršiti predvideno funkcijo ob prisotnosti monitoringa (identifikacija časovnih točk odpovedi) 4
5 3.3. Modeli staranja ob spreminjajočih se ambientalnih temperaturah Pojem aktivacijske energijee E a : najmanjša količina energije, ki je potrebna za proženje nekega temperaturno pospešenega mehanizma odpovedi; Mehanizem odpovedijefizikalen pojav, ki od trenutka sprožitve v določenem času privede do določenega tipa odpovedi; Mnogoterna povezanost: mehanizem odpovedi tip odpovedi Zldi Zgledi: Mehanizem odpovedi E a (ev) Oksidacijski defekti 0.3 do 0.5 Korozijski defekti 0.45 Elektromigracija 0.6 itd. 5
6 Načini ipridobivanja E a : Od proizvajalca (večinoma nedosegljivi) Odčitana iz standardov (npr. IEC 62380) Izračunana (izredno kompleksno, temelji na osnovi tempraturnih meritev) Zgled odčitave iz standarda: IEC Polprevodniki v splošnem ev Diode 0.4 ev IC MOS, BiCMOS 0.3 ev Pasivne e v splošnem ev 6
7 Arrheniusov model S povečanjem ambientalne temperature za 10 C se hitrost degradacijskega (kemijskega) procesa podvoji Namen modela: pomaga določati pričakovano življensko dobo e v odvisnosti od ambientalne temperature Arrheniusov izraz: L(T) karakteristična življenska doba, A skalirni faktor, E a aktivacijska energija reakcije (za IC eV) 0.7 ev), k Boltzmannova konstanta (k=8,62*10 5 ev/k), T temperatura v Kelvinih L( T ) = Ae E a kt 7
8 T 1 aplikacijsko okolje, T 2 pospešeno okolje MTTF normal (T 1 )= F*MTTF pospešeni(t 2) T 1 =20 C, T 2 =70 C Arrheniusova groba ocena: 32 F(0.5 ev)=17,88 F(0.6 ev)=31,84 F(0.7 ev)=56,68 F = e E a e k 1 1 *( T 1 T 2 ) 8
9 F(0.7 ev)=56,68, predvideni did i MTTF normal (20 C)=1 FIT > približno 17*10 6 ur pospešenega testiranja (odločno č predolgo) poljubno zvečevanje E a ni možno vezano je na vrsto izdelave rešitev: ob konstantni E a =0,7 ev in zvečani zgornji a meji T 2 (npr. 340 C) bi prineslo 524 ur pospešenega testiranja) ali to povzroči netipične odpovedi? problemi za uporabo: T 2 =?, E a =? p p 2 a 9
10 Coffin Mansonov model Upraben za ciklične temperaturne teste f ciklična frekvenca cikla, α= 0.33, β=1.99, ΔT sprememba temperature v ciklu, A 1 in A 2 skalirna faktorja, rezultat N f število temperaturnih ciklov do odpovedi, T max pa največja dosežena temperatura N f = A 1 A f 2 * e Δ E a KT α T β max 10
11 Ugotovitve: s povečevanjem maks.t se število ciklov delovanja občutno manjša s povečevanjem č frekvence oscilacij, ij se število ciklov delovanja občutno manjša in s povečevanjem temperaturnega razpona, se število ciklov delovanja drastično zmanša 11
12 Lastnosti modelov staranja Dobre plati: lti Dobimo dobre napovedi življenskih dob, Modeliramo lahko različne scenarije Modeliramo lahko že v fazi zasnove produkta Slabe plati: Veliko število natančnih vhodnih podatkov (E a =?) Časovna (cenovna) potratnost Prevelika kompleksnost z vidika obravnave sistema kot celote 12
13 Izvajanje testov v temperaturni komori hladni korak k( (angl. cold step): ) odkrivanjenapak k pri nadpovprečno nizkih temperaturah delovanja; primarni cilj je določanje spodnje temperaturne limite delovanja in določanje spodnje temperaturne meje, od katere naprej sistem ne deluje več; vroči korak k( (angl. hot step): ) odkrivanjenapak k pri nadpovprečno visokih temperaturah delovanja; primarni cilj je določanje zgornje temperaturne limite delovanja in določanje zgornje temperaturne meje, od katere dalje sistem ne deluje več; korakk kz ekstremno spreminjajočose j č temperaturo (angl. rapid temperature cycling) 13
14 3.4. Standardi za določanje zanesljivosti elektronskih MIL HDBK 217F (1991, 1992, 1995): Javno dostopen Pesimističen Zastarel IEC (ažuren) Dostopen preko nakupa licence Kompleksen Telcordia SR 332 Dostopnost? China 299B (ažuren) Dostopnost??? 14
15 MIL HDBK 217 F parts count prediction : vse e naj bi delale pod tipičnimi referenčnimi pogoji (v praksi to ne drži) parts stress analysis prediction : posamezne e ne delujejo pod enakimi pogoji (realističen pogled) λ = n sys f i i= 1 λ sys = n i= 1 (λ REF [( λ ), π, π, π, π, π,...] REF i S T ) i E Q A 15
16 Zgledi posameznih funkcij za λ i = ( C1 * π T + C2 * π E )* π Qπ L λ ( ) ( * * * * * izračun: i = λref i π T π C πv π SR π Q π E ) Mikroporocesor ji Kondenzatorji Upori λ = ( λ i REF ) ( π * π * π * π * π ) i T P S Q E 16
17 Splošne ocene: MIL najpesimističnejši, IEC v sredini,telcordia najoptimističnejša (min. intenzivnost i todpovedovanja) d Največ vhodnih podatkov zahteva IEC, najmanj jtl Telcordia Večinoma so vse tri metodologije integrirane i v zanesljivostna programska orodja 17
18 Literatura 3.poglavja 3poglavja [1] /t i /0163 ttf/i [2] and hass/ [3] IEC TR 62380, 2004 [Ipc1] IPC (Institute of Printed Circuits), "Guidelines for Accelerated dreliabilit Testing of Surface Mount tsolder Attachments", t IPC SM 785, Table 4, November 1992; [4] [5] Militaryhandbook MIL HDBK 217F, Reliability prediction of electronic equipment, 1990, Department of Defense, USA [6] [7] energy.htm com/activation energy htm [8] [9] Using_Models_to_Predict_Semiconductor_Failures.php [10] 18
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