at 300 K electron Hall mobility:

Transcription

1 Aluminium Gallium Arsenide (Al x Ga 1 x As) Electrical Properties Mobility and Hall Effect Fig Electron Hall mobility versus alloy composition x. Electron concentration 15 3 n 0 = ( 5 10) 10 cm, T = 300 K (after Saxena [1981b]). (Reprinted with permission from The American Physical Society, 1981.) For weakly doped AlxGa1 xas at 300 K electron Hall mobility: µ H = x x 2 (for x < 0.45) µ H = x 720x 2 (for 0.45 < x < 1) (after Shur [1990]). Fig Electron Hall mobility versus temperature Curve 1 x = 0; n 0 = cm (after Stillman et al. [1970]) Curve 2 x = 0.32; n 0 ( 05. 1) 10 cm (after Saxena [1981b]). (Reprinted with permission from The American Physical Society, 1981.)

2 16 Handbook on Semiconductor Parameters: Vol. 2 Fig Electron Hall mobility versus electron concentration for two values of x, T = 77 K (after Liu [1990]). (Reprinted with permission from Chapman & Hall, 1990.) Fig Electron Hall mobility versus electron concentration for two values of x, T = 300 K (after Liu [1990]). (Reprinted with permission from Chapman & Hall, 1990.) Fig Hall factor versus alloy composition x for n-type Al x Ga 1 x As. Electron concentration 15 3 n 0 ( 5 10) 10 cm, T = 300 K (after Saxena [1981a]). (Reprinted with permission from Elsevier Science, 1981.)

3 Aluminium Gallium Arsenide (Al x Ga 1 x As) 17 Fig Hole Hall mobility versus alloy composition x (acceptor density N a cm 3 ), T = 296 K (after Look et al. [1992]). (Reprinted with permission from the American Institute of Physics, 1992.) For weakly doped Al x Ga 1 x As at 300 K hole Hall mobility: (after Shur [1990]). µ H x+ 740x 2 Fig Hole Hall mobility versus temperature. Curve 1 x = 0; 17 p 0 = cm curve 2 x = 0.41; 17 3 p 0 = cm curve 3 x = 0.75; 17 3 p 0 = cm (after Yang et al. [1981]). (Reprinted with permission from IOP Publishing, 1981.)

4 18 Handbook on Semiconductor Parameters: Vol. 2 Fig Hole Hall mobility versus hole concentration for two values of x T = 77 K (after Liu [1990]). (Reprinted with permission from Chapman & Hall, 1990.) Fig Hole Hall mobility versus hole concentration for two values of x, T = 300 K (after Liu [1990]). (Reprinted with permission from Chapman & Hall, 1990.) Fig Hall factor versus temperature for p-type GaAs, AlAs and Al 0.5 Ga 0.5 As. Curves are calculated for acceptor concentration N a = cm (after Look et al. [1992]). (Reprinted with permission from the American Institute of Physics, 1992.)

5 Aluminium Gallium Arsenide (Al x Ga 1 x As) Two-Dimensional Electron and Hole Gas Mobility at Al x Ga 1 x As/GaAs Interface Fig Temperature dependences of the electron Hall mobility for two-dimensional gas. Landmark samples in the history of modulationdoped GaAs are shown (after Pfeiffer et al. [1989]). Physics, 1989.) Fig Dependences of electron mobility versus surface carrier density n 2DEG in the modulation-doped two-dimensional gas (after Pfeiffer et al. [1989]). Physics, 1989.) Fig Dependences of surface electron density (curve 1) and mobility (curve 2) versus undoped spacer thickness. T = 4 K (after Harris et al. [1987]). Physics, 1987.)

6 20 Handbook on Semiconductor Parameters: Vol. 2 Fig Electron mobility in 2D-electron gas versus Al fraction x at three different temperatures (after Drummond et al. [1982]). Physics, 1982.) Fig Hole mobility in 2D-hole gas versus temperature. Solid line shows theoretical calculation. Points show experimental data for hole surface density cm 2 (after Walukiewicz [1986]). Physics, 1986.)

7 Aluminium Gallium Arsenide (Al x Ga 1 x As) Transport Properties in High Electric Field Fig Field dependences of the electron drift velocity for different values of x. Curves are calculated using displaced Maxwellian approximation, T = 300 K. Curve 1. x = 0; 2. x = 0.225; 3. x = 0.325; 4. x = 0.5 (after Hava and Auslender [1993]). Physics, 1993.) Fig Field dependences of the electron drift velocity for different values of x. Solid curves show experimental results (electron concentration 15 3 n 0 = ( 2 10) 10 cm. Dashed curves show results of Monte Carlo calculations (after Hill and Robson [1981]). (Reprinted with permission from Editions de Physique, 1981.) Fig Dependences of peak electron velocity versus x (after Hava and Auslender [1993]). Physics, 1993.)

8 22 Handbook on Semiconductor Parameters: Vol. 2 Fig Average electron energy as a function of electric field, 300 K. 1. x = 0.25; 2. x = 0.45 (after Lippens and Vanbesien [1987]). (Reprinted with permission from IOP Publishing, 1987.) Fig The field dependences of normalized longitudinal diffusion coefficient, 300 K. 1. x = 0; 2. x = 0.25 (after de Murcia et al. [1993]). Physics, 1993.) Fig Field dependence of hole drift velocity, 300 K. Monte Carlo calculations (after Brennan and Hess [1986]). Physics, 1986.)

9 Aluminium Gallium Arsenide (Al x Ga 1 x As) Transport Properties of Electron and Hole Two-Dimensional Gas in High Electric Field Fig Experimental field dependences of electron velocity for bulk GaAs with n 0 = cm 3 (curve 1) and two-dimensional modulationdoped heterostructures Al xga1 xas GaAs 77 K. 2. x = 0.3; 3. x = 0.5 (after Masselink [1989]). (Reprinted with permission from IOP Publishing, 1989.) Fig Experimental field dependences of electron velocity for bulk GaAs with n 0 = cm 3 (curve 1) and two-dimensional modulationdoped heterostructures, 300 K. 2. x = 0.3; 3. x = 0.5 (after Masselink [1989]). (Reprinted with permission from IOP Publishing, 1989.) Fig Experimental field dependences of hole velocity for two-dimensional hole gas. Single heterointerface samples, x = 0.5, T = 77 K p = 3.3 cm, µ = 3300 cm Vs p = 4.2 cm, µ = 4000 cm Vs (after Masselink et al. [1987]). (Reprinted with permission from IOP Publishing, 1987.)

10 24 Handbook on Semiconductor Parameters: Vol Impact Ionization Fig Fits to experimental values of electron and hole ionization coefficients for Al x Ga 1 x As with x = , 300 K. Experimental points are shown only for x = 0.1 (after Robbins et al. [1988]). (Reprinted with permission from the American Institute of Physics, 1988.) Electron and hole ionization coefficients, 300 K (after Robbins et al. [1988]). For electrons: αi = α0 exp[ ( Fn 0 F) m ] (1.3.1) x α 0 (cm 1 ) F n 0 (V/cm) m For holes: β i = β0 exp[ ( Fp0 F ) n ] (1.3.2) x β 0 (cm 1 ) F p 0 (V/cm) n

11 Aluminium Gallium Arsenide (Al x Ga 1 x As) 25 Fig Experimental ionization coefficients versus x for electric fields V/cm (bottom curves) and V/cm (upper curves). The lines are drawn only to connect the data points, 300 K (after Robbins et al. [1988]). Physics, 1988.) Breakdown voltage and breakdown field of n + -GaAs/p-Al 0.3 Ga 0.7 As heterojunctions, 300 K Na = 1014 cm 3, Vi = 28. kv, Ei = V cm N = 1016 cm 3, V = 70 kv, E = V cm a i i (after Hur et al. [1990]).

12 26 Handbook on Semiconductor Parameters: Vol Recombination Parameters Fig Ambipolar diffusion length at a carrier density of cm 3 versus x, 300 K. Measured by catodoluminescene technique (after Zarem et al. [1989]). Physics, 1989.) Fig Carrier lifetimes at carrier density of cm 3 (high injection level) versus x, 300 K. Measured by photoluminiscence decay signal technique (after Zarem et al. [1989]). Physics, 1989.) Fig Hole lifetime versus x for n Al x Ga 1 x As with doping level Nd Na cm, 300 K (after Timmons et al. [1988]). (Reprinted with permission from IOP Publishing, 1988.) Radiative recombination coefficient at 300 K in Al x Ga 1 x As cm 3 /s.

13 Aluminium Gallium Arsenide (Al x Ga 1 x As) 27 Auger coefficient at 300 K (after Takeshima [1985]): C n (for n-doped samples) x = cm 6 /s cm 6 /s cm 6 /s C p (for p-doped samples) x = cm 6 /s cm 6 /s cm 6 /s. Surface and interface recombination velocities in GaAs and Al x Ga 1 x As (after Pavesi and Guzzi [1994]). Al composition (x) S (cm/s) ± free surface interface between GaAs Al yga1 yas ( y = 0.3) interface between GaAs Al yga1 yas ( y = 0.5) p-type free surface interface between Al xga1 xas Al yga1 yas ( y = 0.88) undoped interface between Al xga1 xas Al yga1 yas ( y = 0.5) undoped