arxiv: v2 [cond-mat.str-el] 25 Oct 2008

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1 A model for the phase separation controlled by doping and the internal chemical pressure in different cuprate superconductors K. I. Kugel and A. L. Rakhmanov Institute for Theoretical and Applied Electrodynamics, Russian Academy of Sciences, Izhorskaya Str. 13, Moscow, Russia and Department of Physics, Loughborough University, Loughborough LE11 3TU, United Kingdom arxiv: v2 [cond-mat.str-el] 25 Oct 2008 A. O. Sboychakov Institute for Theoretical and Applied Electrodynamics, Russian Academy of Sciences, Izhorskaya Str. 13, Moscow, Russia Nicola Poccia and Antonio Bianconi Department of Physics, University of Rome La Sapienza, P.le A. Moro 2, Rome, Italy (Dated: February 25, 2013) In the framework of a two-band model, we study the phase separation regime of different kinds of strongly correlated charge carriers as a function of the energy splitting between the two sets of bands. The narrow (wide) band simulates the more localized (more delocalized) type of charge carriers. By assuming that the internal chemical pressure on the CuO 2 layer due to interlayer mismatch controls the energy splitting between the two sets of states, the theoretical predictions are able to reproduce the regime of phase separation at doping higher than 1/8 in the experimental pressure-doping-t c phase diagram of cuprates at large microstrain as it appears in overoxygenated La 2CuO 4. PACS numbers: h, a, g I. INTRODUCTION The mechanism driving the emergence of a quantum macroscopic coherent phase that is able to resist to the de-coherence effects of high temperature remains a major topic of research in condensed matter. The realization of this macroscopic quantum phase in doped cuprates close to the Mott insulator regime has stimulated a large amount of investigations on the physics of strongly correlated metals. Most of theoretical papers treated models of a homogeneous system made of a single electronic band (or models of multiple hybridized bands reduced to a single effective band), with a large Hubbard repulsion. There is growing agreement that the solution of the problem of high-t c superconductivity requires the correct description of the normal state where spin, charge, orbital and lattice degree of freedoms compete and the functional phase emerges in a complex system with two main components showing mesoscopic phase separation. Here we consider a theoretical model of the mesoscopic phase separation in a two-band scenario of two strongly correlated electronic fluids. This simple model grabs the key physics of the anomalous normal phase in cuprates exhibiting the phase separation as a function of charge density and the energy splitting between the two bands. This allows the understanding of the different superconducting phases in different cuprate families, i.e., the new 3D phase diagram where the critical temperature depends on the doping and pressure 1. The motivation of this theoretical work is based on the results of recent experiments using angular resolved photoemission spectroscopy (ARPES) 2,3,4,5,6 and scanning tunnelling spectroscopy (STM) 7,8 providing compelling experimental evidence for dual nature of charge carriers and the nanoscale phase separation of the two components in two different spatial domains in cuprate high-t c superconductors 9,10,11. A clear case for the phase separation of the two types of charge carriers is overoxygenated La 2 CuO 4+y where the interstitial oxygen ions are mobile above 180 K and stimulate the phase separation of the two different kinds of dopant holes 12,13,14,15,16,17,18,19,20. Currently, from the analysis of magnetic neutron scattering experiments, there is an agreement for the frustrated mesoscopic phase separation at doping larger than 1/8 in Sr-doped La214, Y123, and Bi2212 between a first more delocalized component that does not show spin fluctuations and a second more localized electronic component, showing stripelike spin fluctuations 21,22. Several reviews and books have been published on the two-component scenario and phase separation in cuprates 18,19,20,23,24,25,26. Here we focus not on the well studied phase separation in the underdoped regime, near the Mott phase, between a hole-poor antiferromagnetic phase and a metallic holerich phase but on the phase separation in the overdoped regime 12,13,14,15,16,17,18,19,20,21,22 between a hole poor phase with doping close to 1/8 and a hole-rich phase with doping close to 1/4. This phase-separation scenario has been described in Refs. 18,21,22 for LaSrCuO and overoxygenated La 2 CuO 4. It is based on the experimental fact that variation of the magnetic incommensurability due to spin stripes saturates at doping 1/8 see Fig. 15 of Ref. 21. The residual magnetic scattering at high doping suggests that one of the phases has stripe correlations similar to the x = 1/8 phase, with the volume fraction of this phase decreasing with x, as indicated in Fig. 17 of Ref. 21. The

2 2 other phase is presumably uniformly doped. The picture, then, is that as one increases the doping beyond x = 1/8, it becomes unfavorable to accommodate the additional holes in stripes; instead, patches of the uniformly-doped phase grow at the expense of the stripe phase. The maximum T c seems to occur in a mixed phase region dominated by the stripe phase. A similar scenario is now well accepted for understanding the physics of phase separation in manganites 27,28,29. It was shown that even in the absence of any specific order parameter, the presence of two strongly correlated electron bands leads to the possibility of a phaseseparated state 30. In Ref. 30, the evolution of phase separation was studied as a function of doping. However, a large amount of data clearly indicates that the phase separation regime is not only a function of doping but also of the anisotropic chemical pressure acting on the CuO 2 layers, due to interlayer mismatch 32,33,34,35. The chemical pressure is a well established physical variable that controls the physical properties of perovskites and it is usually measured by the average ionic radius of the cations in the intercalated layers or the tolerance factor t, in fact, the internal chemical pressure in perovskites can be defined as η = 1 t. In all perovkites and particularly in manganites, it is well established that the phase diagram of the electronic phases depends on the two variables, charge density and chemical pressure 36. Since the early years of high-t c superconductivity research the mismatch chemical pressure has been considered as a key variable controlling the electronic properties of cuprates only on one family, La214 35, however it was not possible to extend this idea to other families for the presence of a plurality of intercalated layers with cations having largely different coordination numbers. Therefore, it was not possible to compare the average ionic size r A in the intercalated layers and to get the tolerance factor t for all cuprate families. This problem was solved by obtaining the internal chemical pressure from the measure of the compressive microstrain ε = (R 0 r)/r in the CuO 2 plane (that has the same absolute value as the tensile microstrain in the intercalated layers) where r is the average Cu-O distance and R 0 = nm is the unrelaxed Cu- O distance 32,33,34. Therefore, the chemical pressure is proportional to microstrain, η = 2ε. In this new 3D phase diagram, the phase separation for the overdoped regime in overoxygenated La214 occurs in a family with high chemical pressure close to η = 8%, while it becomes a frustrated phase separation in the LaSrCuO, Bi2212, and Y123 that are in the range of chemical pressure 7% > η > 4%, while for cuprates with lower microstrain only very fast critical fluctuations could be present 32,33,34. In this paper, we propose a model of a two-component system made of two different strongly correlated electron bands where the chemical pressure controls the energy splitting between the two bands. The phase separation in the overdoped regime can exist for specific values of the ratio between the bandwith of the two bands. The critical point for the transition from a frustrated phase separation to a non frustrated phase separation can be obtained by tuning the long range 1/r Coulomb repulsion that frustrates the phase separation as going from Sr doped to oxygen doped La124. II. THE MODEL The existence of the two types of the strongly correlated charge carriers in cuprates can be described in terms of the two-band Hubbard model. The Hamiltonian of such a system can be written as 30 H = nm α,σt α a nασ a mασ E n nbσ µ n nασ nσ nα,σ + 1 U α n nασ n nα σ + U n nασ n nᾱσ. (1) 2 2 nα,σ nα,σσ Here, a nασ and a nασ are the creation and annihilation operators for electrons corresponding to bands α = {a, b} at site n with spin projection σ, and n nασ = a nασa nασ. The symbol... denotes the summation over the nearestneighbor sites. The first term in the right-hand side of Eq. (1) corresponds to the kinetic energy of the conduction electrons in bands a and b with the hopping integrals t a > t b. In our model, we ignore the interband hopping. The second term describes the shift E of the center of band b with respect to the center of band a ( E > 0 if the center of band b is below the center of band a). The last two terms describe the on-site Coulomb repulsion of two electrons either in the same state (with the Coulomb energy U α ) or in the different states (U ). The bar above α or σ denotes not α or not σ, respectively. The assumption of the strong electron correlations means that the Coulomb interaction is large, that is, U α, U t α, E. The total number n of electrons per site is a sum of electrons in the a and b states, n = n a + n b, and µ is the chemical potential. Below, we consider the case n 1 relevant to cuprates. Model (1) predicts a tendency to the phase separation in a certain range of parameters, in particular, in the case when the hopping integrals for a and b bands differ significantly (t a > t b ) 30. This tendency results from the effect of strong correlations giving rise to dependence of the width of one band on the filling of another band. In the absence of the electron correlations (n 1), the halfwidth w a = zt a of a band is larger than w b = zt b (z is the number of the nearest neighbors of the copper ion). Due to the electron correlations, the relative width of a and b bands can vary significantly 30. In the limit of strong correlations, U α, U, we can describe the evolution of the band structure with the change of n and E following the method presented in Ref. 30. We introduce one-particle Green function G ασ (n n 0, t t 0 ) = i ˆTa nασ (t)a n 0ασ (t 0), (2)

3 where ˆT is the time-ordering operator. The equations of motion for one-particle Green function with Hamiltonian (1) includes two-particle Green functions G ασ,βσ (n n 0, t t 0 ) = i ˆTa nασ (t)n nβσ (t)a n 0ασ(t 0 ). In the considered limit of strong on-site Coulomb repulsion, the presence of two electrons at the same site is unfavorable, and the two-particle Green function is of the order of 1/U, where U U α, U. The equation of motion for G ασ,βσ includes the three-particle terms coming from the commutator of a nασ (t) with the U terms of Hamiltonian (1), which are of the order of 1/U 2 and so on. In these equations, following the Hubbard I approach 31, we neglect the terms of the order of 1/U 2 and make the following replacement ˆTa n+mασ (t)n nβσ (t)a n 0ασ(t 0 ) n nβσ ˆTa n+mασ (t)a n 0ασ(t 0 ). As a result, we derive a closed system for the one- and two-particle Green functions 30,31. This system can be solved in a conventional manner by passing from the time-space (t,r) to the frequency-momentum (ω, k) representation. In the case of superconducting cuprates the total number of electrons per site does not exceed unity, n 1. The upper Hubbard sub-bands are empty, and we can proceed to the limit U α, U. In this case, the one-particle Green function G ασ is independent of U and can be written in the frequency-momentum representation as 29,30 G ασ (k, ω) = g ασ ω + µ + E α g ασ w α ζ(k), (3) where E α = 0 for α = a and E α = E for α = b, g ασ = 1 σ nᾱσ n α σ, (4) and ρ 0 (E ) = d 3 kδ(e ζ(k))/(2π) 3 is the density of states for free electrons (with the energy normalized by unity, E 1). The chemical potential µ in Eq. (5) can be found from the equality n = n a + n b. n a, n b n a n b w b /w a = 0.3, = PS p p Figure 1: (Color online) Evolution of the occupation numbers n a and n b of the bands a and b at fixed doping δ = 1 n = 0.3 in the absence of phase separation. The region of phase separation lies between two vertical dotted lines. There we have two phases: P a, including mostly a charge carriers and P b with dominant b carriers. The content of different types of carriers in P a and P b is given by the intersections of n a and n b curves with left and right dashed vertical curves, respectively. The change in concentration p of phase P a in the phase-separation region is shown by the (green) dot-dashed line n ασ = n nασ is the average number of electron per site in the state (α, σ), and ζ(k) is the spectral function depending on the lattice symmetry. Since the results does not vary crucially with the change of the lattice symmetry 30, here we consider the case of the simple cubic lattice, when ζ(k) = [ cos(k 1 d) + cos(k 2 d) + cos(k 3 d) ] /3, d is the lattice constant. In the main approximation in 1/U, the magnetic ordering does not appear and we can assume that n α = n α n α /2. Equations (3) and (4) demonstrate that the filling of band a depends on the filling of band b and vice versa. Indeed, using the expression for the density of states ρ α (E) = π 1 Im G α (k, E + i0)d 3 k/(2π) 3, we get the following expression for the numbers of electrons in bands a and b (α = a, b) where n α = 2g α n 0 ( µ + E α g α w α n 0 (µ ) = µ 1 ) (5) de ρ 0 (E ), (6) When the energy band b is far above the center of band a ( E < 0), there exist only a electrons. With the increase of E, the chemical potential reaches the bottom of the b band E w b. At higher E, the b electrons appear in the system, and the effective width of a band, = 2w a g a, starts to decrease. At large positive values of E, the a carriers in the system disappear and there exist only b electrons. The plots of n a, n b, and the effective bandwidth as functions of E are shown in Figs. 1 and 2, respectively. The energy of the system in homogeneous state, E hom, is the sum of electron energies in all filled bands. Similarly to Eq. (5), we can write E hom in the form wa eff where E hom = 2 α g 2 α w αε 0 ( µ + E α g α w α ε 0 (µ ) = µ 1 ) E n b, (7) de E ρ 0 (E ). (8) The dependence of E hom (n) is shown in Fig. 3 at different values of E. We see that within a certain n

4 n b =0 w a eff n a n, b w b eff n a = Figure 2: (Color online) Effective widths w eff a,b of the a and b bands versus band shift E at fixed doping δ = 1 n = 0.3. The (green) dot-dashed curve illustrates the behavior of the chemical potential µ; the (green) hatched area under this curve corresponds to the states occupied by charge carriers w b /w a =0.3 =0.4 =0.1 =-7 = Figure 3: (Color online) The energy of the system vs doping level n at different values of E. Solid curves correspond to the homogeneous state, whereas the dashed curves are the energies of the phase-separated state without taking into account electrostatic and surface contributions to the total energy. range, the system can have a negative compressibility, 2 E hom / n 2 < 0, which means a possibility for the charge carriers to form two phases with different electron concentrations 30,32. The negative compressibility disappears when the centers of the bands are far apart from each other (see, e.g., the curve corresponding to = 0.4 in Fig. 3). The phase separation may be hindered by increase of n the total energy due to surface effects and a charge redistribution. However, at first we do not take into account this effects. We consider two phases, P a (low carrier density) and P b (high carrier density), with the number of electrons per site n 1 and n 2, respectively. A fraction p of the system volume is occupied by the phase P a and 1 p is a fraction of the phase P b. We seek a minimum of the system energy E 0 ps (n 1, n 2 ) = pe hom (n 1 ) + (1 p)e hom (n 2 ) (9) under the condition of the charge carrier conservation n = pn 1 + (1 p)n 2. The results of calculations of the system energy in the phase-separated state are shown in Fig. 3 by the dashed lines. We see that the phase separation exists in the range of n where both types of charge carriers coexist in the homogeneous state. The ratio of the numbers of a and b carriers is different in different phases. In the first phase P a, almost all charge carriers are in the band a, while in the second phase P b the situation is opposite. The redistribution of charge carriers in the phaseseparated state gives rise to the additional electrostatic contribution, E C, to the total energy. This term in the Wigner-Seitz approximation was calculated in Ref. 30. At p < 0.5 it can be written as E C = V (n 1 n 2 ) 2 (R s /d) 2 u(p), where ( ) u(p) = 2πp 2 3p 1/3 + p /5, (10) and V is the characteristic energy of the intersite Coulomb interaction and R s is the radius of the spherical droplet of the phase P a surrounded by the shell of the phase P b. In the case p > 0.5, we should replace n 1 n 2 and p 1 p. The second contribution to the total energy, depending of the size of inhomogeneities, is related to the surface between two phases. The corresponding energy per unit volume can be presented in the form E S = psσ(n 1, n 2 )/V 0, where p < 0.5, S is the surface and V 0 is the volume of the inhomogeneity, and σ(n 1, n 2 ) is the surface tension. For e spherical droplets, we have E S = 3pσ(n 1, n 2 )d/r s. If p > 0.5, we should replace p 1 p. Minimization of the sum E CS = E C +E S with respect to R s allows us to calculate this value. In doing so, we get at p < 0.5 ( R s = d 3pσ(n 1, n 2 ) 2V 0 (n 2 n 1 ) 2 u(p) ) 1/3. (11) The total energy of the inhomogeneous state then reads E ps = pe hom (n 1 ) + (1 p)e hom (n 2 ) + E CS (R s ), (12) where R s is given by Eq. (11). The surface energy comes from the size quantization and it was estimated in Ref. 30. The electrostatic and surface contributions to the energy related to an inhomogeneous charge distribution reduce the range of n, in which the phase separation is favorable, see the phase diagram in Fig. 4.

5 5 III. RESULTS AND DISCUSSION The undoped state of the cuprates corresponds to one electron per site (n = 1) in the model used in Ref. 30. The number of itinerant holes δ is related to n as δ = 1 n. In general, the relationship between n and δ could be more complicated 37, however, for the present considerations such corrections are not of principal importance. The phase diagram of the model (1) in the (δ, E) plane is drawn in Fig. 4. In this figure, below the lower (red) solid line, we have the charge carriers only of a type, whereas above the upper (blue) curve, there are only b carriers. If we ignore the possibility of the phase separation, the relative number of a and b charge carriers varies gradually between these two lines. The evolution of the occupation numbers n a and n b of the two bands with E at a fixed doping is illustrated in Fig. 1. Note also that the effective widths of the a and b bands also vary with the band shift due to the electron correlation effects. This is illustrated in Fig. 2. Taking into account possible phase-separated states results in a significant modification of the phase diagram in the range of intermediate doping. In the hatched (green) region in Fig. 4 the homogeneous state becomes unfavorable and the system separates into two phases (P a and P b ) with different numbers of charge carriers per site n 1 n a and n 2 n b. The electrostatic contribution to the energy related to an inhomogeneous charge distribution reduces the doping range, in which the phase separation is favorable 30. In Fig. 4, we illustrate that a relatively small energy loss due to the charge disproportionalization leads to a substantial decrease in the area of the phase-separation region: compare the areas indicated by arrows corresponding to V/w a = 1 and 15 (V is the characteristic energy of intersite Coulomb interaction 38 ) and the whole hatched area corresponding to V = 0. Note that at low hole doping (n close to one), the antiferromagnetic (AF) correlations are dominant, which requires a special analysis. Estimating the contribution of the long-range Coulomb interaction to the energy of the phase-separated state, we assume the simplest droplet-like geometry of the inhomogeneities. The phase separation occurs in the range of parameters where the energy of homogeneous state as a function of doping has a negative curvature corresponding to the negative compressibility 29,30. It was widely discussed in literature that long-range Coulomb interaction in the systems with negative compressibility can give rise to more complicated geometry of the phase separation (stripes, layers, rods, etc.), see Refs. 39,40 and references therein. Thus, a due account of the long-range Coulomb interaction could reproduce different superstructures (stripes, in particular) observed in the cuprate superconductors near the optimum doping. However, the proper analysis of the inhomogeneity geometry requires a further study based on a more complicated model. Now let us discuss the relation of the above model Band shift V/w a =15 holes in b band V/w a =1 a + b phase separation holes in a and b bands holes in a band w b /w a = Doping Figure 4: (Color online) The phase diagram of model (1) in the (doping, band shift) plane at the ratio of band widths w b /w a = 0.3. Below the lower (red) solid line, there are charge carriers only of a type, whereas above the upper (blue) curve - only b carriers. Between these lines, there appears the region of phase separation (marked by (green) hatching). The charge disproportionalization in the phase-separated state can substantially reduce this region: the arrows indicate the phase separation regions at V/w a = 1 and 15, where V is the characteristic energy of intersite Coulomb interaction. to the experimental situation in the copper-based perovskites, where two types of charge carriers and inhomogeneous (phase-separated) state are observed. The inhomogeneous state in cuprates corresponds to the coexistence of two phases. One of them is characterized by a superstructure (charge ordering, stripes, etc.) and another one has no superstructure. The state with charge (or spin) superstructure corresponds to a higher degree of localization and, therefore, to a smaller value of the hopping integral. Naturally, a charge carrier may hop either retaining short-range order and gaining in the potential energy or hop in an arbitrary way with larger hopping integral thus gaining in the kinetic energy. The former corresponds to our b state and the latter to the a state. In our analysis, we did not consider any ordering, which arises in the next-order approximations. In particular, magnetic order requires taking into account the terms of the order of t 2 a,b /U and the charge ordering implies allowing for the Coulomb interaction of carriers at different sites (nearest-neighbor at least). The relative position of the two bands, E, and hopping integrals, t a,b, depends, in particular, on the chemical pressure proportional to a microstrain ε in the crystal lattice. To describe the experimental phase diagram of cuprates in the (δ, ε) plane 1,32,33,34, we should know the relationship between the model parameters and the chemical pressure. It is natural to assume that the two bands in the cuprate crystal originate from the double degenerate e g hole level of Cu 2+ (configuration d 9 ) in

6 6 the crystal field of cubic symmetry. The splitting of this level occurs due to lattice distortions related to the Jahn- Teller effect, lowering the cubic symmetry. The chemical pressure distorts the crystal lattice even more and should affect the value of E significantly. It is natural to assume that E and ε are linearly related to each other, if ε 1. So, we can write E(ε) = E(0) + E 1 f(ε), (13) where f(ε) is a dimensionless function and f(ε) ε at ε 1. Cu 2+ is a typical Jahn-Teller ion and we can assume that E 1 is of the order of the characteristic Jahn-Teller energy, which is larger than t a (see, e.g., Refs. 30,38,41 and references therein). The effect of the microstrain on the relative band positions can be significant since the value E arises due to splitting of the originally degenerate levels. In the same time, small strains give rise only to a small corrections to the bandwidth. So, the ratio t b /t a is considered further on as independent of ε. Note also that the values of the intersite Coulomb interaction V characteristic of perovskites is of the order of 0.1 1t a (see, e.g., Ref. 38 and references therein). Thus, the value V = 15zt a used below is quite reasonable. Bearing this in mind, we compare the theoretical phase diagram in Fig. 4 with the experimental 3D phase diagram of cuprates 1,32 in Fig. 5. The left-hand y scale is the mismatch chemical pressure η related to microstrain as η = 2ε and the x axis is the doping (the number of holes per Cu site). The color plot represents the values of critical temperature in different superconducting cuprate families. The plot shows the fit of the experimental data of a large number of materials with the convolution of a parabolic curve with the maximum at T max for T c as function of doping, and an asymmetric Lorentzian for T max as a function of the mismatch chemical pressure with the maximum of 135 K at 2ε = 4%. The y axis in the right-hand side of the figure gives the energy distance E between the center of band a and band b normalized to the width of band w a of the more itinerant carriers. The phase diagram involving the superconducting critical temperature, chemical pressure, and doping reaches the T c maximum at 2ε = 4% and 0.16 holes per Cu sites. Based on the aforementioned consideration, we can take E(0) = 0.133w a and E(0) = 6.67w a in Eq. (13). We can identify a low-doping insulating phase, for any chemical pressure, at doping smaller than 6, where the vertical dashed line indicates the line of metal-insulator transition. The experimental investigations of the novel 3D phase diagram of cuprates indicate that the homogeneous metallic phase, with more delocalized states, occurs for both high doping and low chemical pressure i.e., in the low right corner of the figure. In this region, we have in the theoretical model the charge carriers only in the band a. On the contrary, the homogeneous phase made of localized states where the striped phase appears, occurs at the corner on the top-left side of the figure. In the theoretical model, we have in such a region, the charge carriers only in the band b. The superconducting phase occurs in the intermediate region between these two limiting cases. The phase separation region predicted by our model (inside the area bounded by the solid white line) corresponds to the superconducting phase. It is in the qualitative agreement with the STM, extended X-ray absorption fine structure (EXAFS), neutron pair distribution functions (PDF) experiments showing that high-t c superconductivity occurs in a regime of mesoscopic phase separation. The present results show that the maximum critical temperature occurs where the energy splitting between the more itinerant, band a and the more localized, band b is close to zero. Figure 5: (Color online) The values of superconducting transition temperature T c from 0 for dark blue to 135 K for dark red is shown in a color plot as function of chemical pressure (2ε) and doping (holes number per Cu site). The white curve corresponds to the phase separation region given by the twoband Hubbard model (1) corresponding to w b /w a = 0.3 and V/w a = 1 (see Fig. 4). Phases P a and P b include mostly the carriers of a and b types, respectively. The black solid line is the boundary of the phase-separated state deduced from neutron scattering and anomalous diffraction experiments for cuprates (La214, Bi2212, and Y123 systems). The theoretical phase diagram reproduces qualitatively the experimental results on the phase separation in cuprates (La214, Bi2212, and Y123 systems) near optimum doping obtained by neutron scattering and anomalous diffraction techniques 32,33,34. The phase separation arises in the intermediate doping range and disappears at low and high doping levels. The phase with more itinerant electrons exists at small microstrains, more localized (and more ordered) phase arises at higher microstrains, and the phase-separated state is located in the intermediate range of ε. However, our calculations predict the phase separation in a broader doping range than in the experiments. It seems to be a consequence of simplifications used in the formulation and approximate analysis of the two-band Hubbard model (1). To improve the agreement with the experiment it is necessary to take into account specific features of the lattice and electron structure of the cuprate superconductors. In particular, we disregard the interband electron transitions, that is, we neglect the terms t ab a naσ a mbσ in Hamiltonian (1) as-

7 7 suming that t ab = 0. The doping range where the phase separation can exist reduces with the increase of t ab 41. As it follows from Fig. 5, the superconducting transition temperature T c is the highest for the parameters range where the system is in the phase-separated state. This is an indication that the mechanism of the phase separation is intimately related to the phenomenon of the superconductivity. It is worth to note that in the case when interband coupling t ab is in the range t a < t ab < t b, the electron density of states has a peak near the Fermi level in the parameter range corresponding to the phaseseparated state, where T c is maximum 41. We can not claim whether this fact is accidental or not. IV. CONCLUSIONS Up to now, most of the attention both of experimentalists and theorists has been addressed to the phase separation in the underdoped regime between a first undoped antiferromagnetic phase and a second doped metallic phase of cuprates. Now, we have an evidence for mesoscopic phase separation in the overdoped region of cuprate superconductors where a striped phase at doping 1/8 coexist with a metallic phase with doping close to 1/4. In our paper, we were dealing just with this situation. We have presented an emerging theoretical scenario that relating the phase separation to the chemical pressure. This scenario grabs key physical aspects of the 3D phase diagram of cuprates. It was shown that the two-band model is appropriate for the normal phase of all cuprate superconducting families, where the energy splitting between the two bands is controlled by mismatch chemical pressure. In the regime where the two bands are close in energy, the system is unstable toward the phase separation. The highest critical temperature of the superconducting transition in cuprates is attained within the phase-separated state. 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